KR20150020140A - 소수성 뱅크 - Google Patents

소수성 뱅크 Download PDF

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Publication number
KR20150020140A
KR20150020140A KR20140105926A KR20140105926A KR20150020140A KR 20150020140 A KR20150020140 A KR 20150020140A KR 20140105926 A KR20140105926 A KR 20140105926A KR 20140105926 A KR20140105926 A KR 20140105926A KR 20150020140 A KR20150020140 A KR 20150020140A
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KR
South Korea
Prior art keywords
layer
bank
slope
region
solution
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Application number
KR20140105926A
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English (en)
Korean (ko)
Inventor
조나단 아이작
개리 윌리엄스
다니엘 퍼시더
리오 뱀버
Original Assignee
캠브리지 디스플레이 테크놀로지 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 캠브리지 디스플레이 테크놀로지 리미티드 filed Critical 캠브리지 디스플레이 테크놀로지 리미티드
Publication of KR20150020140A publication Critical patent/KR20150020140A/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
KR20140105926A 2013-08-16 2014-08-14 소수성 뱅크 KR20150020140A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1314655.0 2013-08-16
GBGB1314655.0A GB201314655D0 (en) 2013-08-16 2013-08-16 Hydrophobic bank

Publications (1)

Publication Number Publication Date
KR20150020140A true KR20150020140A (ko) 2015-02-25

Family

ID=49301786

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20140105926A KR20150020140A (ko) 2013-08-16 2014-08-14 소수성 뱅크

Country Status (5)

Country Link
JP (1) JP2015057772A (ja)
KR (1) KR20150020140A (ja)
CN (1) CN104377311B (ja)
GB (1) GB201314655D0 (ja)
TW (1) TWI634686B (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11038150B1 (en) 2020-01-30 2021-06-15 Sharp Kabushiki Kaisha QLED/OLED pixel having reflective cavity electrode configuration
US11152538B1 (en) 2020-04-03 2021-10-19 Sharp Kabushiki Kaisha High on-axis brightness and low color shift QD-LED pixel
US11264597B2 (en) 2020-06-22 2022-03-01 Sharp Kabushiki Kaisha Multiple QD-LED sub-pixels for high on-axis brightness and low colour shift
US11456443B2 (en) 2020-12-01 2022-09-27 Sharp Kabushiki Kaisha High on-axis brightness and low colour shift QD-LED pixel with equal layer thicknesses between colour pixels
US11785819B2 (en) 2021-04-01 2023-10-10 Sharp Kabushiki Kaisha Layers for improved extraction for transparent cathode emissive displays
US11871610B2 (en) 2021-05-13 2024-01-09 Sharp Kabushiki Kaisha Dual bank structure for improved extraction from an emissive layer
US11968858B2 (en) 2021-09-02 2024-04-23 Sharp Display Technology Corporation Display subpixels having multiple emissive areas with high aspect ratios

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106207012B (zh) 2016-08-15 2018-07-06 京东方科技集团股份有限公司 像素打印结构及其制作方法、显示装置和喷墨打印方法
CN106356396B (zh) * 2016-11-24 2021-03-26 深圳市Tcl高新技术开发有限公司 适用于印刷工艺制备显示器的像素Bank结构及其制备方法
CN108346677B (zh) * 2017-07-17 2019-03-12 广东聚华印刷显示技术有限公司 像素结构及其制作方法
US10741798B1 (en) 2019-01-18 2020-08-11 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Organic light emitting diode display panel and method of manufacturing same
CN109713021B (zh) * 2019-01-18 2020-05-12 深圳市华星光电半导体显示技术有限公司 一种oled显示面板及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3915806B2 (ja) * 2003-11-11 2007-05-16 セイコーエプソン株式会社 電気光学装置および電子機器
EP2077698B1 (en) * 2007-05-31 2011-09-07 Panasonic Corporation Organic el device and method for manufacturing the same
JP2009087998A (ja) * 2007-09-27 2009-04-23 Sanyo Electric Co Ltd 半導体装置
CN101855742B (zh) * 2007-12-10 2011-12-28 松下电器产业株式会社 有机电致发光器件和有机电致发光显示面板及其制造方法
JP2010118509A (ja) * 2008-11-13 2010-05-27 Panasonic Corp 発光素子

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11038150B1 (en) 2020-01-30 2021-06-15 Sharp Kabushiki Kaisha QLED/OLED pixel having reflective cavity electrode configuration
US11152538B1 (en) 2020-04-03 2021-10-19 Sharp Kabushiki Kaisha High on-axis brightness and low color shift QD-LED pixel
US11264597B2 (en) 2020-06-22 2022-03-01 Sharp Kabushiki Kaisha Multiple QD-LED sub-pixels for high on-axis brightness and low colour shift
US11456443B2 (en) 2020-12-01 2022-09-27 Sharp Kabushiki Kaisha High on-axis brightness and low colour shift QD-LED pixel with equal layer thicknesses between colour pixels
US11785819B2 (en) 2021-04-01 2023-10-10 Sharp Kabushiki Kaisha Layers for improved extraction for transparent cathode emissive displays
US11871610B2 (en) 2021-05-13 2024-01-09 Sharp Kabushiki Kaisha Dual bank structure for improved extraction from an emissive layer
US11968858B2 (en) 2021-09-02 2024-04-23 Sharp Display Technology Corporation Display subpixels having multiple emissive areas with high aspect ratios

Also Published As

Publication number Publication date
GB201314655D0 (en) 2013-10-02
JP2015057772A (ja) 2015-03-26
CN104377311B (zh) 2018-10-16
TWI634686B (zh) 2018-09-01
CN104377311A (zh) 2015-02-25
TW201513427A (zh) 2015-04-01

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