KR20140145403A - Light emitting device and lighting system - Google Patents

Abstract

An embodiment relates to a light emitting device. The light emitting device according to an embodiment of the present invention includes: a first conductive semiconductor layer; an active layer which is formed on the first conductive semiconductor layer; a second conductive semiconductor layer which is formed on the active layer; a light emitting chip which includes a first pad which is arranged on the first conductive semiconductor layer; a first wire which has a first protrusion of a ball type bonded on the first pad; and a first bonding member which is bonded on the surface of the first protrusion and the first pad. The upper side of the first bonding member is arranged to be lower than the highest height of the first wire.

Description

[0001] LIGHT EMITTING DEVICE AND LIGHTING SYSTEM [0002]

Embodiments relate to a light emitting device and an illumination system having the same.

Light emitting diodes (LEDs) are a type of semiconductor devices that convert electrical energy into light. The light emitting diode has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environmental friendliness compared with conventional light sources such as fluorescent lamps and incandescent lamps. Accordingly, much research has been conducted to replace an existing light source with a light emitting diode, and a light emitting diode has been increasingly used as a light source for various lamps used in indoor / outdoor, a liquid crystal display, an electric signboard, and a streetlight.

An embodiment provides a light emitting device having an adhesive member for bonding a ball-shaped projection of a wire to a pad.

The embodiment provides a light emitting device in which a ball-shaped projection of a wire is bonded to a pad by an insulating adhesive member.

The embodiment provides a light emitting device in which a ball-shaped projection of a wire is bonded to a pad by a conductive adhesive member.

A light emitting device according to an embodiment includes: a first conductive semiconductor layer; An active layer on the first conductive semiconductor layer; A second conductive semiconductor layer on the active layer; And a first pad disposed on the first conductive type semiconductor layer; A first wire having a ball-shaped first projection bonded on the first pad; And a first adhesive member adhered to a surface of the first pad and the first projection, wherein an upper surface of the first adhesive member is disposed lower than a peak height of the first wire.

The embodiment can prevent a defect in which a wire-bonded projection is opened.

The embodiment can prevent the defective wire bonded to the light emitting chip.

The embodiment can improve the reliability of the light emitting device having the light emitting chip and the wire.

Embodiments can improve the reliability of an illumination system having a light emitting element.

1 is a side sectional view of a light emitting device according to a first embodiment.
Fig. 2 is a detailed configuration diagram of the first wire of Fig. 1. Fig.
Fig. 3 is a detailed configuration diagram of the second wire of Fig. 1. Fig.
4 is a side sectional view showing a light emitting device according to the second embodiment.
5 is a side sectional view showing a light emitting device according to the third embodiment.
6 is a side sectional view showing a light emitting device according to a fourth embodiment.
Figs. 7 to 9 are plan views comparing the widths of the protrusions of the first wire and the adhesive member according to the embodiment. Fig.
10 is a view showing a first modification of the bonding member of the light emitting element of Fig.
11 is a view showing a second modification of the bonding member of the light emitting element of Fig.
12 is a view showing a third modification of the bonding member of the light emitting element of Fig.
13 is a view showing a fourth modification of the bonding member of the light emitting element of Fig.
14 shows a perspective view of a display device having a light emitting element according to an embodiment.
15 is a side sectional view showing another example of a display device having a light emitting element according to the embodiment.
16 is an exploded perspective view of a lighting apparatus having a light emitting element according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under / under" Quot; on "and" under "as used herein are intended to refer to all that is" directly "or" indirectly " . In addition, standards for top, bottom, and bottom of each layer or each structure are described with reference to drawings. In the drawings, thicknesses and sizes of respective layers or structures are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

Hereinafter, a light emitting device according to an embodiment will be described with reference to the accompanying drawings.

1 is a side sectional view showing a light emitting device according to a first embodiment.

Referring to FIG. 1, the light emitting device includes a light emitting chip 101, first and second wires connected to the light emitting chip 101, first and second wires 11 and 21, And the first and second adhesive members 31 and 33.

The light emitting chip 101 includes a substrate 111, a buffer layer 112, a light emitting structure 110, a first pad 116, and a second pad 117. The substrate 111 includes a light-transmitting or non-light-transmitting material, and also includes a conductive or an insulating material.

The buffer layer 112 reduces the lattice constant difference between the substrate 111 and the material of the light emitting structure 110, and may be formed of a nitride semiconductor. A nitride semiconductor layer not doped with a dopant may be further formed between the buffer layer 112 and the light emitting structure 110 to improve crystal quality. The nitride semiconductor may be a Group III-V or II-VI compound semiconductor.

The light emitting structure 110 includes a first conductive semiconductor layer 113, an active layer 114, and a second conductive semiconductor layer 115.

The first conductivity type semiconductor layer 113 is formed of a Group III-V compound semiconductor doped with a first conductivity type dopant, and the first conductivity type semiconductor layer 113 is formed of In _x Al _y Ga _{1 -x- y} N (0? x? 1, 0? y? 1, 0? x + y? 1). The first conductive semiconductor layer 113 may be a stacked structure of layers including at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, . ≪ / RTI > The first conductive semiconductor layer 113 is an n-type semiconductor layer, and the first conductive dopant is an n-type dopant including Si, Ge, Sn, Se, and Te.

A first clad layer may be formed between the first conductive semiconductor layer 113 and the active layer 114. The first clad layer may be formed of a GaN-based semiconductor, and the bandgap thereof may be formed to be equal to or larger than a bandgap of the active layer 114. The first cladding layer is formed in the first conductivity type and serves to constrain carriers.

The active layer 114 is disposed on the first conductive semiconductor layer 113 and selectively includes a single quantum well, a multiple quantum well (MQW), a quantum wire structure, or a quantum dot structure. do. The active layer 114 includes a well layer and a barrier layer period. The well layer comprises a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), and wherein the barrier layer is In _x Al _y And Ga _1-xy N (0? X? 1, 0? Y? 1, 0? X + y? 1). The period of the well layer / barrier layer may be one or more cycles using a lamination structure of, for example, InGaN / GaN, GaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, and InAlGaN / InAlGaN. The barrier layer may be formed of a semiconductor material having a band gap higher than a band gap of the well layer.

A second conductive semiconductor layer 115 is formed on the active layer 114. The second conductive semiconductor layer 115 may include a semiconductor doped with a second conductive dopant such as In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1). The second conductive semiconductor layer 115 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The second conductivity type semiconductor layer 115 may be a p-type semiconductor layer, and the second conductivity type dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant.

The second conductive semiconductor layer 115 may include a superlattice structure, and the superlattice structure may include an InGaN / GaN superlattice structure or an AlGaN / GaN superlattice structure. The superlattice structure of the second conductivity type semiconductor layer 115 may protect the active layer 114 by diffusing a current contained in the voltage abnormally.

For example, the first conductivity type semiconductor layer 113 may be a p-type semiconductor layer, and the second conductivity type semiconductor layer 115 may be an n-type semiconductor layer. can do. A first conductive semiconductor layer having a polarity opposite to the second conductive type may be further disposed on the second conductive semiconductor layer 115.

The light emitting structure 110 may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure. Here, p is a p-type semiconductor layer, and n is an n-type semiconductor layer, and the - includes a structure in which the p-type semiconductor layer and the n-type semiconductor layer are in direct contact or indirect contact. Hereinafter, for convenience of explanation, the uppermost layer of the light emitting structure 110 will be described as the second conductivity type semiconductor layer 115.

A first pad 116 is disposed on the first conductive semiconductor layer 113 and a second pad 117 is disposed on the second conductive semiconductor layer 115.

An electrode layer 118 may be disposed between the second conductive semiconductor layer 115 and the second pad 117. The electrode layer 118 may include a light transmitting material or a reflective material. The electrode layer 118 may be disposed on a part of the upper surface of the second conductive type semiconductor layer 115, or may have an arm pattern.

The first protrusion 15 of the first wire 11 is attached to the first pad 116 and the second protrusion 25 of the second wire 21 is attached to the second pad 117. The first and second wires 11 and 21 are attached by a ball bonding process and a ball-shaped protrusion is formed at the end of the wires 11 and 21 using a capillary of a wire bonding apparatus. (15, 25) are formed and attached to the respective pads (116, 117). In this attaching process, the projections 15 and 25 are pressed and deformed to be bonded to the pads 116 and 117, respectively. The capillary then provides conductive material and moves so that the wires 11, 21 extend from the protrusions 15, 25. These wires 11 and 21 may be bonded by stitch bonding to another pad, for example, a lead electrode on which the light emitting chip 101 is mounted.

The material of the first wire 11 and the second wire 21 may be selected from the group consisting of Au, Ag, Pd, Fe, Al, Si, Ca), or an alloy thereof. The material of the first wire 11 and the second wire 21 may be formed of a single metal or may be formed by stacking a plurality of layers of different metals. A gold or silver material may be formed on the surface of the first wire 11 or an antioxidant layer such as copper or a copper alloy such as benzotriazole (1.2.3-Benzotriazole, BTA) . ≪ / RTI >

The main component of the first wire 11 and the second wire 21 is a metal having a wire composition ratio of 5 wt% or more and at least one or all of metals of silver (Ag), gold (Au), and palladium (Pd) . The metal having the composition ratio of each wire 11, 21 of 80 wt% or more may be gold (Au) or silver (Ag).

2 and 3, the bottom width D1 of the first protrusion 15 and the second protrusion 25 is wider than the diameter of each of the wires 11 and 21, and each of the pads 116 and 117 The width of the top surface of the first substrate W1 may be narrower than the width of the top surface of the second substrate W2. The first and second wires 11 and 21 are externally influenced so that the protrusions 15 and 25 and the connecting portions 14 and 24 which are the connecting portions of the protrusions 15 and 25 and the wires 11 and 21 are boiled, May cause problems. The external impact includes an impact such as expansion or contraction of the molding member.

A first adhesive member 31 and a second adhesive member 33 are formed on the first protrusion 15 and the second protrusion 25, respectively. The first adhesive member 31 is disposed on the surface of the first protrusion 15 and the upper surface of the first pad 116 so that the first protrusion 15 is adhered to the first pad 116 I will. The first bonding member 31 is formed to be higher than the connecting portion 14 of the first wire 11 and is connected to the connecting portion 14 between the first wire 11 and the first protrusion 15, , Neck part can be protected.

The second adhesive member 33 is disposed on the surface of the second projection 25 and the upper surface of the second pad 117 and the second projection 25 is bonded onto the second pad 117 I will. The second adhesive member 33 is formed to be higher than the connection portion 24 of the second wire 21 so that the connection portion 24 between the second wire 21 and the second protrusion 25, , Neck part can be protected.

The lower width D2 of the first and second adhesive members 31 and 33 may be wider than the width D1 and may be greater than 1.5 times the width D1. The lower width D2 of the first and second adhesive members 31 and 33 may be narrower than the width of the upper surface of the first and second pads 116 and 117. However, the present invention is not limited thereto. If the lower width D2 of the first and second adhesive members 31 and 33 is too wide, it may affect the light extraction, and if it is too narrow, the adhesive force may be weakened.

The thickness T2 of the first and second adhesive members 31 and 33 may be greater than the height T1 of the first and second protrusions 15 and 25, The connection portions 14, In addition, the first and second adhesive members 31 and 33 may be formed to have a height lower than a peak height of the first and second wires 11 and 21.

The first and second adhesive members 31 and 33 may be formed of a conductive material or an insulating material and may be formed of a metal or an alloy in the case of a conductive material. As shown in FIG. For example, the first and second bonding members 31 and 33 may be formed of a metal such as gold (Au), silver (Ag), palladium (Pd), iron (Fe), aluminum (Al) Or at least one of these alloys. The first and second bonding members 31 and 33 may be formed by forming the metal into paste and then dicing the metal. For example, the first and second bonding members 31 and 33 may include at least one of gold (Au), silver (Ag), palladium (Pd), and copper (Cu) The first and second adhesive members 31 and 33 are formed of the same metal as the metal of the wires 11 and 21 so that the protrusions 15 and 25 of the wires 11 and 21 are connected to the respective pads 116 and 117 from being separated from the upper surface and also preventing the connection portions 14 and 24 from boiling.

The first and second adhesive members 31 and 33 include a resin material such as an insulating material such as silicone or epoxy. The first and second adhesive members 31 and 33 may be formed of the same material as the molding material for molding the light emitting chip 101. When the first and second adhesive members 31 and 33 are formed of the same material as the molding member, the adhesion to the molding member can be increased.

Also, the first and second adhesive members 31 and 33 may be doped with a metal or a metal oxide in a resin material such as silicon or epoxy. Wherein the metal comprises at least one of gold (Au), silver (Ag), palladium (Pd), iron (Fe), aluminum (Al), silicon (Si), calcium (Ca), wherein the metal oxide is SiO ₂ , TiO ₂ , and Al ₂ O ₃ .

4 is a side sectional view showing a light emitting device according to the second embodiment.

4, the light emitting device 51 includes a body 52 having a cavity 55, a plurality of lead electrodes 53 and 54 disposed in the cavity 55, and a plurality of lead electrodes 53 (54), and a molding member (56) disposed in the cavity (55).

 The body 52 may be formed of a material having a reflectivity higher than that of the light emitted by the light emitting chip 101, for example, a material having a reflectance of 70% or more. When the reflectance of the body 52 is 70% or more, the body 52 may be defined as a non-transparent material. The body 52 may be formed of a resin-based insulating material, for example, a resin material such as polyphthalamide (PPA). The body 52 may be formed of a thermosetting resin including silicon, epoxy resin, or plastic, or a high heat-resistant, high-light-resistant material. The above-mentioned silicon includes a white-based resin. In the body 52, an acid anhydride, an antioxidant, a release agent, a light reflector, an inorganic filler, a curing catalyst, a light stabilizer, a lubricant, and titanium dioxide may be selectively added. . The body 52 may be formed of at least one member selected from the group consisting of an epoxy resin, a modified epoxy resin, a silicone resin, a modified silicone resin, an acrylic resin, and a urethane resin. For example, an epoxy resin comprising triglycidylisocyanurate, hydrogenated bisphenol A diglycidyl ether and the like and an acid comprising hexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, 4-methylhexahydrophthalic anhydride and the like DBU (1,8-Diazabicyclo (5,4,0) undecene-7) as a curing accelerator in an epoxy resin, ethylene glycol, titanium oxide pigment and glass fiber as a cocatalyst were added, A solid epoxy resin composition that has been cured and B-staged can be used. However, the present invention is not limited thereto.

Further, the body 52 may be doped with a light blocking material or a diffusing agent, and such a material may reduce light transmittance. In order to provide the body 52 with a predetermined function, at least one member selected from the group consisting of a diffusing agent, a pigment, a fluorescent material, a reflective material, a light shielding material, a light stabilizer, and a lubricant is suitably mixed with the thermosetting resin .

The body 52 may include a metal oxide such as epoxy or silicon. The metal oxide may include at least one of TiO ₂ , SiO ₂ , and Al ₂ O ₃ . % ≪ / RTI >

A cathode mark may be formed on a predetermined region of the body 52. The cathode mark displays polarity information of the plurality of lead electrodes 53 and 54.

A cavity 55 is formed in the body 52. The cavity 55 has a shape that is recessed from the upper surface of the body 52 and is open at the top. The cavity 55 may be formed in a circular shape, an elliptical shape, or a polygonal shape when viewed from the top side of the device, but the present invention is not limited thereto. A plurality of lead electrodes 53 and 54 are disposed on the bottom of the cavity 55, and the plurality of lead electrodes 53 and 54 are disposed so as to be electrically separated from each other. The side wall of the cavity 55 may be formed to be inclined or perpendicular to the bottom thereof.

The plurality of lead electrodes 53 and 54 may include first and second lead electrodes 53 and 54 spaced from each other and may be made of titanium, And may include an alloy of at least one or two materials of gold (Au), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin have. When one of the first and second lead electrodes 53 and 54 is an alloy, copper (Cu) and at least one kind of metal alloy such as a copper-zinc alloy, a copper-iron alloy, a copper- , And copper-silver-iron. The first and second lead electrodes 53 and 54 may have a multi-layer structure, and may have a thickness of 0.15 mm to 1.5 mm, for example, 0.5 mm to 1 mm.

The light emitting chip 101 may emit at least one of ultraviolet light, red light, green light, blue light, and white light, and may be implemented as a diode that emits a visible light band or an ultraviolet light band. It is not limited. One or a plurality of light emitting chips 101 according to the embodiment may be disposed.

The light emitting chip 101 is bonded to the first lead electrode 53 with an adhesive agent 57 and is connected to the first lead electrode 53 and the second wire 21. The second lead electrode 54, Is connected to the first wire (11).

Here, the first wire 11 is bonded to the second lead electrode 54. The first wire 11 may be bonded to the third lead 17 on the second lead electrode 54. The third protrusion 17 may not be formed or may be smaller than the first protrusion 15, but the present invention is not limited thereto. An adhesive member 34 may be further formed at a portion where the first wire 11 is bonded to the second lead electrode 54. The adhesive member 34 may cover the third protrusion 17, And the material thereof will be referred to the first embodiment.

The second wire 21 is bonded to the first lead electrode 53. The second wire 21 may be bonded to the fourth lead 27 on the first lead electrode 53. The fourth protrusion 27 may not be formed or may be smaller than the width of the second protrusion 25, but the present invention is not limited thereto. An adhesive member 32 may be further formed at a portion where the second wire 21 is bonded to the first lead electrode 53 and the adhesive member 32 may cover the fourth protrusion 27 , The material thereof will be referred to the first embodiment.

The cavity 15 is formed with a molding member 56 and the molding member 56 may include a transparent resin material such as epoxy or silicone. Further, a fluorescent material or a diffusing agent may be optionally added to the molding member 56, but the present invention is not limited thereto. An optical lens may be formed on the molding member 56. The optical lens may include a concave lens shape, a convex lens shape, and a lens having a concave portion and convex portions. The fluorescent material may include, for example, a YAG-based, a silicate-based, or a TAG-based fluorescent material.

Heat is generated according to the operation of the light emitting chip 101, and the heat can be dissipated through the first and second lead electrodes 53 and 55. In addition, since the heat is conducted to the molding member 56, the molding member 56 expands or shrinks depending on whether the light emitting chip 101 is operated or not. And affects the second wires 11 and 21. The first and second wires 11 and 21 may be formed on the protrusions 15, 17, 25, and 25 even if the molding member 56 is expanded or contracted, 27). As a result, it is possible to prevent defective deterioration of the fragile protrusions on the wires 11 and 21.

5 is a view illustrating a light emitting device according to a third embodiment. In describing FIG. 6, the same parts as FIG. 1 will be described with reference to FIG.

Referring to FIG. 5, the light emitting device includes a light emitting chip 102 and a wire 11A connected to the light emitting chip 102.

The light emitting chip 102 includes a contact layer 121 under the light emitting structure 110, a reflection layer 124 below the contact layer 121, a support member 125 below the reflection layer 124, And a protective layer 123 and a pad 119 around the light emitting structure 110. [ In this light emitting chip 102, the contact layer 121, the protective layer 123, the reflective layer 124, and the supporting member 125 are formed under the second conductive type semiconductor layer 115, and then the growth substrate is removed .

The contact layer 121 is in ohmic contact with a lower layer of the light emitting structure 110, for example, the second conductivity type semiconductor layer 115, and the material thereof may be selected from a metal oxide, a metal nitride, an insulating material, (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO) a material selected from the group consisting of an oxide, an antimony tin oxide (ATO), a gallium zinc oxide (GZO), Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, . In addition, the metal material and the light transmitting conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO can be used in a multilayer structure. For example, IZO / Ni, AZO / Ag, IZO / / Ag / Ni or the like. The contact layer 121 may further include a current blocking layer corresponding to the pad 116.

The passivation layer 123 may be formed of a metal oxide or an insulating material and may be formed of a material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), SiO 2, SiO x, SiO x N y, Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ . The protective layer 123 may be formed using a sputtering method or a deposition method, and a metal such as the reflective layer 124 may prevent the layers of the light emitting structure 110 from being short-circuited.

The reflective layer 124 may be formed of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and combinations thereof. The reflective layer 124 may be formed to have a width larger than the width of the light emitting structure 110, which may improve the light reflection efficiency. A metal layer for bonding and a metal layer for thermal diffusion may be further disposed between the reflective layer 124 and the support member 125, but the present invention is not limited thereto.

The support member 125 may be a base substrate made of a metal such as copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu- Si, Ge, GaAs, ZnO, SiC). A bonding layer may be further formed between the supporting member 125 and the reflective layer 124, and the bonding layer may bond the two layers together. The above-described light emitting chip is merely an example, and is not limited to the features disclosed above. The light emitting chip may be selectively applied to the light emitting device, but the present invention is not limited thereto.

A pad 119 is disposed on the first conductive type semiconductor layer 115 and the wire 11A is bonded and bonded to the pad 119 by a projection 15. The bonding member 35 is bonded onto the projection 15 of the wire 11A and the pad 119. [ The adhesive member 35 is bonded to the periphery and the upper portion of the projection 15 with a width wider than the width of the projection 15 of the wire 11A. Further, the adhesive member 35 is formed to have a thickness lower than the highest point of the wire 11A, thereby protecting the connection portion between the wire 11A and the protrusion 15. The material of the adhesive member 35 will be described with reference to the first embodiment.

6 is a view illustrating a light emitting device according to a fourth embodiment. The light emitting device of FIG. 6 may include the light emitting chip of FIG. 1 or 5, and the light emitting chip of FIG. 5 is arranged for convenience of explanation.

6, the light emitting device 61 includes a module substrate 62 and a light emitting chip 102 bonded on the module substrate 62 with an adhesive 67 of a conductive material. The module substrate 62 includes a first lead electrode 63 and a second lead electrode 65 and the light emitting chip 102 is bonded and bonded to the second lead electrode 65 and the wire 11A Here, the third protrusion 17 may or may not be formed when the wire 11A is bonded. The bonding member 36 may be formed on the portion where the wire 11A is bonded to the second lead electrode 65, but the present invention is not limited thereto.

The molding member 68 may be formed on the mold substrate 62, but the present invention is not limited thereto.

The direction in which the wire 11A extends may be a straight line connecting the first protrusion 15 and the third protrusion 17. Depending on the direction of extension of the wire, the external impact may be transmitted differently depending on the area of the wire. Accordingly, the protrusions of the wire can be supported by an adhesive member having the same width or different widths as in the following example.

Figs. 7 to 9 are views comparing the widths of the protrusions of the first wire and the adhesive member according to the embodiment.

7, the first adhesive member 31 is formed to have a substantially same width D3 from the periphery of the first protrusion 15 of the first wire 11, Thereby supporting the periphery with a uniform force.

8, the first adhesive member 31 may be formed to have different widths D4 and D5 from the periphery of the first protrusion 15 of the first wire 11, The width D4 of the first region disposed in the direction in which the first wire 11 extends may be wider than the width D5 of the second region opposite the first region. This makes it possible to further transmit the impact to the region located in the direction in which the first wire 11 extends, so that the first wire 11 can be protected from external impacts transmitted differently along the extending direction.

9, the first adhesive member 31 may be formed to have different widths D6 and D7 from the periphery of the first protrusion 15 of the first wire 11, 31 may be formed such that the width D6 of the first region disposed in the direction in which the first wire 11 extends is narrower than the width D7 of the second region opposite to the first region. This is because the impact can be further transmitted to the region located in the direction in which the first wire 11 extends and is arranged so as to be able to support the first projection 15 in the opposite second region by the first adhesive member 31 It is.

10 to 13 are views showing modifications of the adhesive member of the light emitting device of FIG. For convenience of explanation, the first wire and the first pad will be described, and the second wire and the second pad will be described with reference to the description of the first wire and the first pad.

10, a first bonding member 41 is attached to the first pad 116 around the first projection 15 of the first wire 11 and a second bonding member 41 is mounted on the first bonding member 31 The second adhesive member 42 is bonded.

The second adhesive member 42 is disposed at a height lower than the highest point of the first wire 11 and covers the upper portion of the first protrusion 15 and protects the connection portion 14 of the first wire 11 . The lower width of the first adhesive member 31 may be wider than the lower width of the second adhesive member 42. In this case, the lower periphery of the first adhesive member 41 may be exposed to the outside .

The first and second adhesive members 41 and 42 may be made of the same material or different materials from those described in the first embodiment. When the first and second adhesive members 41 and 42 are made of the same material, they may be made of a metal material or a resin material. When the materials of the first and second adhesive members 41 and 42 are different from each other, the first adhesive member 41 is formed of a metal material so that current injection efficiency is increased together with the protrusions, (42) is made of a resin material so that the adhesion with the molding member can be improved.

11, the first protrusion 15 of the first wire 11 is attached to the first pad 116 with the first adhesive member 43, 2 bonding member 44 is bonded. The first adhesive member 43 may be made of a metal and the second adhesive member 44 may be formed of a resin material so as to cover the first adhesive member 43. Here, the volume of the first adhesive member 43 may be smaller than the volume of the second adhesive member 44, which causes the first protrusions 15 and the connecting portion to contact the first pad 116, and the second adhesive member 44 is adhered to the first adhesive member 43 and the first wire 11.

12, the first protrusion 15 of the first wire 11 is attached to the first pad 116 with the adhesive member 45, and the reflective layer 46 is formed on the adhesive member 45 Can be applied. The reflective layer 46 may be a metallic reflector or a non-metallic reflector, and may effectively reflect incident light.

Referring to FIG. 13, the first protrusion 15 of the first wire 11 is attached to the first pad 116 with the adhesive member 47. One or a plurality of grooves 116A may be formed on the first pad 116 and an adhesive member 47 may be disposed on the grooves 116A to enhance adhesion. The lower width of the adhesive member 47 may be more than twice the lower width of the first protrusion 15 of the first wire 11. Here, the groove 116A may be formed at a position spaced apart from the lower edge of the first protrusion 15 of the first wire 11 by 50 mu m or more to provide a bonding space.

<Lighting system>

The light emitting device or the light emitting device according to the embodiment can be applied to the illumination system. The illumination system includes a structure in which a plurality of light emitting elements are arrayed, and includes a display device shown in Figs. 14 and 15, a lighting device shown in Fig. 16, and may include an illumination lamp, a traffic light, a vehicle headlight, have.

14 is an exploded perspective view of a display device having a light emitting element according to an embodiment.

14, a display device 1000 according to an embodiment includes a light guide plate 1041, a light source module 1031 for providing light to the light guide plate 1041, and a reflection member 1022 An optical sheet 1051 on the light guide plate 1041 and a display panel 1061 on the optical sheet 1051 and the light guide plate 1041 and the light source module 1031 and the reflection member 1022 But is not limited to, a bottom cover 1011.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. &Lt; / RTI &gt;

The light source module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device. The light source module 1031 includes at least one light source module 1031 and may directly or indirectly provide light from one side of the light guide plate 1041. The light source module 1031 includes a substrate 1033 and a light emitting device or a light emitting device 1035 according to the embodiment described above and the light emitting device or the light emitting device 1035 is mounted on the substrate 1033 at a predetermined interval . &Lt; / RTI &gt;

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like. When the light emitting element 1035 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the substrate 1033 can be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

The plurality of light emitting devices 1035 may be mounted on the substrate 1033 such that the light emitting surface is spaced apart from the light guiding plate 1041 by a predetermined distance. However, the present invention is not limited thereto. The light emitting device 1035 may directly or indirectly provide light to the light-incident portion, which is one surface of the light guide plate 1041, but the present invention is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light source module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet condenses incident light into a display area. The brightness enhancing sheet improves the brightness by reusing the lost light. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light source module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the invention is not limited thereto.

15 is a view showing a display device having a light emitting element according to an embodiment.

15, the display device 1100 includes a bottom cover 1152, a substrate 1020 on which the above-described light emitting device 1124 is arrayed, an optical member 1154, and a display panel 1155.

The substrate 1020 and the light emitting device 1124 may be defined as a light source module 1160. The bottom cover 1152, the at least one light source module 1160, and the optical member 1154 may be defined as a light unit 1150. The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto. The light source module 1160 includes a substrate 1020 and a plurality of light emitting devices 1124 arranged on the substrate 1020.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of PC material or PMMA (poly methyl methacrylate), and the light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.

The optical member 1154 is disposed on the light source module 1060, and performs surface light source, diffusion, and light condensation of light emitted from the light source module 1060.

16 is an exploded perspective view of a lighting apparatus having a light emitting element according to an embodiment.

16, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800 . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device according to an embodiment of the present invention.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200 and may be coupled to the heat discharger 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint having a diffusion material. The light from the light source module 2200 can be scattered and diffused to emit to the outside using the milky white material.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light emitting device 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 into which a plurality of illumination elements 2210 and a connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the illumination device 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 may have a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components may include, for example, a DC converter, a driving chip for controlling driving of the light source module 2200, an electrostatic discharge (ESD) protection device for protecting the light source module 2200, The present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension portion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. The extension 2670 may be electrically connected to the socket 2800 through a wire.

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

11, 11A, 21: wires 15, 17, 25, 27: projections
31, 32, 33, 34, 35, 41, 42, 43, 4445, 47:
46: reflective layer 52: body
53, 54, 63, 65: lead electrodes 56, 68:
101, 102: light emitting chip 110: light emitting structure
111: substrate 112: buffer layer
116, 117, 119 pad 118 electrode layer

Claims (12)

A first conductive semiconductor layer; An active layer on the first conductive semiconductor layer; A second conductive semiconductor layer on the active layer; And a first pad disposed on the first conductive type semiconductor layer;
A first wire having a ball-shaped first projection bonded on the first pad; And
And a first adhesive member adhered to a surface of the first pad and the first projection,
Wherein an upper surface of the first adhesive member is disposed lower than a peak height of the first wire. The semiconductor device of claim 1, further comprising: a second pad on the second conductive semiconductor layer; A second wire having a second projection in the form of a ball bonded on the second pad; And a second bonding member bonded to a surface of the second pad and the second projection. The light emitting device according to claim 2, wherein the first and second adhesive members have at least one metal contained in the first and second wires. The light emitting device according to claim 3, wherein the first and second adhesive members comprise a resin material, and the at least one metal is added to the resin material. The method of claim 3, wherein the first and second adhesive members are formed of a material selected from the group consisting of gold (Au), silver (Ag), palladium (Pd), iron (Fe), aluminum (Al) And at least one light emitting element. The light emitting device of claim 2, wherein at least one of the first and second adhesive members is formed of an insulating material. The light emitting device according to claim 1, wherein the lower width of the first adhesive member is larger than the lower width of the first protrusion. The light emitting device according to claim 7, wherein an upper surface of the first adhesive member is disposed higher than a connection portion between the first wire and the first protrusion. The light emitting device according to claim 1 or 2, further comprising: a molding member covering the light emitting chip and the first and second wires; And a first lead electrode under the light emitting chip. The light emitting device according to claim 9, wherein the first adhesive member comprises the same material as the material of the molding member. The light emitting device according to claim 2, wherein at least one of the first and second adhesive members includes a fourth adhesive member, and the fourth adhesive member is formed of a material different from that of the first and second adhesive members. The light emitting device according to claim 2, wherein a groove is disposed on the first pad, and the first bonding member is disposed in the groove.

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