KR20140140467A - Thin Film Deposition Apparatus, and Linear Source therefor - Google Patents

Abstract

To solve the problem, the present invention provides a linear source of a thin film deposition apparatus capable of depositing a quality thin film by minimizing particles when a thin film is formed on a substrate by using an atomic layer deposition (ALD) process. In the thin film deposition apparatus and a linear source used therein according to the present invention, in order to jet a reaction gas in a plasma state, the reaction gas is plasma-gasified by an inductively coupled plasma (ICP) scheme to jet the reaction gas in a stable plasma state, thus forming a quality thin film.

Description

Thin Film Deposition Apparatus and Linear Source Therefor,

The present invention relates to a thin film deposition apparatus for depositing a thin film on a substrate and a linear source used therein.

The organic electroluminescent display device is a self-luminous display that emits light by electrically exciting a fluorescent organic compound. The organic electroluminescent display device is attracting attention as a next generation display because it can be driven at a low voltage, is easy to be thinned, has a wide viewing angle and fast response speed .

However, the light emitting layer of the organic electroluminescent device has a problem that the light emitting layer is damaged when exposed to moisture and oxygen. Accordingly, a sealing means is provided on a substrate on which an organic electroluminescent device is formed in order to prevent the organic electroluminescent device from being damaged by moisture and oxygen. The sealing means may be provided as an encapsulating substrate or a sealing thin film. As the display becomes smaller and thinner, the sealing means is formed of a sealing film.

Such a sealing thin film is formed by alternately laminating at least four inorganic films and organic films, and has a thickness of 0.5 to 10 mu m. For example, the sealing film may be formed by alternately laminating a first organic film, a first inorganic film, a second organic film, and a second inorganic film.

As described above, the organic light emitting display device can be formed to have a thin thickness by applying a thin sealing film having an inorganic film and an organic film.

For example, a thin sealing thin film formed on an organic light emitting display may be formed of Al ₂ O ₃ , AlON, or the like.

A thin sealing thin film formed on an organic light emitting display can be formed on a substrate by various processes. In particular, a reactive gas such as source gas O ₂ , NH ₃ , NO _2, etc., such as TMA, Lt; RTI ID = 0.0 > atomic layer deposition < / RTI >

However, in the process of spraying the source gas and the reaction gas onto the substrate to be sprayed, the source gas and the reactive gas react with each other on the substrate to generate particles, thereby forming a porous thin film on the substrate.

In order to solve such problems, it is an object of the present invention to provide a thin film deposition apparatus capable of depositing a thin film of good quality on a substrate by converting a reactive gas into a plasma state by applying an ICP method, and a linear source used therein do.

According to an aspect of the present invention, there is provided a linear source of a thin film deposition apparatus for forming a thin film on a substrate by moving a linear source for injecting a source gas and a reactive gas relative to the substrate in a horizontal direction, A reactive gas injection line for injecting a reactive gas in a plasma state is sequentially provided in a direction perpendicular to a relative movement direction with respect to the substrate, and the reed source forms a plasma by an induced electric field Wherein the induction field forming portion is provided in a flow path through which the reaction gas flows.

The induction field forming unit may include a dielectric provided in a flow path through which the reaction gas flows, and at least one electrode provided on the opposite side of the flow path with respect to the dielectric and to which RF power is applied.

The induction electric field forming unit may include a dielectric formed of a hollow tube arranged in the width direction of the substrate, and an electrode installed in the dielectric tube and being supplied with RF power.

Gas blocking means may be provided between the source gas injection line and the reaction gas injection line to prevent the source gas and the reaction gas from protruding one end toward the lower side.

The gas shielding means may include at least one protrusion protruding downward from a lower end of the linear source and forming a blocking wall in a direction perpendicular to the moving direction of the substrate.

Wherein the gas shielding means protrudes downward from a lower end of the linear source and forms a blocking wall in a direction perpendicular to the moving direction of the substrate and has a warp that the substrate can move toward the moving direction when the substrate is moved relative to the linear source And may include at least one barrier layer as much as possible.

The source gas may be TMA, and the reaction gas may be at least one of O ₂ , NH _3, and NO ₂ .

According to another aspect of the present invention, there is provided a plasma processing apparatus comprising: a vacuum chamber for providing a thin film deposition process environment; and a gas supply unit for supplying a source gas and a reactive gas in a plasma state to the substrate, And a linear moving part for relatively moving the substrate in the horizontal direction with respect to the linear source, wherein the induction field forming part for forming a plasma by induction electric field is provided in a flow path through which a reaction gas flows Wherein the thin film deposition apparatus is a thin film deposition apparatus.

The thin film deposition apparatus and the linear source used in the thin film deposition apparatus according to the present invention can form a thin film of good quality by spraying the reactive gas in a stable plasma state by plasma-forming the reactive gas by the ICP method in spraying the reactive gas in the plasma state .

In addition, a gas barrier means for preventing the source gas and the reactive gas from being mixed is provided between the source gas injection line and the reactive gas injection line, thereby minimizing the generation of particles due to the reaction of the source gas and the reaction gas, So that a thin film of good quality can be formed.

Specifically, the gas blocking means for preventing the source gas and the reaction gas from being mixed is constituted by one or more protrusions protruding downward from the lower end of the linear source and constituting a blocking wall in a direction perpendicular to the moving direction of the substrate The generation of particles due to the reaction of the source gas and the reaction gas and the formation of the porous thin film due to the reaction are minimized, and a thin film of good quality can be formed.

In addition, the gas blocking means for preventing the source gas and the reactive gas from being mixed is constituted by a blocking film for blocking the flow between the source gas and the reactive gas, so that the generation of particles due to the reaction of the source gas and the reactive gas, It is possible to form a thin film with good quality.

1 is a cross-sectional view of a thin film deposition apparatus according to an embodiment of the present invention,
Fig. 2 is a sectional view taken along a line II-II in Fig. 1,
FIGS. 3A and 3B are side views showing embodiments of a linear source installed in the thin film deposition apparatus shown in FIG. 1,
4A and 4B are side views showing another embodiment of a linear source installed in the thin film deposition apparatus shown in FIG. 1,
FIG. 4C is a side view of the linear source shown in FIG. 4A seen from FIG. 1 through III-
FIG. 5 is a partial cross-sectional view of a reaction gas injection line of a linear source provided in the thin film deposition apparatus shown in FIG. 1, taken along line III-III in FIG. 1,
FIG. 6 is a partial cross-sectional view of the reaction gas injection line of the linear source provided in the thin film deposition apparatus shown in FIG. 1, taken along line III-III in FIG. 1,
FIG. 7 is a side view of the linear source in FIG. 6 taken along line III-III of FIG.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a cross-sectional view of a thin film deposition apparatus according to an embodiment of the present invention, FIG. 2 is a sectional view taken along the line II-II in FIG. 1, 4A and 4B are side views showing another embodiment of a linear source provided in the thin film deposition apparatus shown in FIG. 1, FIG. 4C is a side view of the linear source shown in FIG. FIG. 5 is a partial cross-sectional view of a reactive gas injection line of a linear source provided in the thin film deposition apparatus shown in FIG. 1, taken along line III-III in FIG. 1. FIG. 6 is a cross- FIG. 7 is a side view of the linear source provided with the tubular dielectric in FIG. 1 taken along the line III-III in FIG. 1, and FIG. to be.

The thin film deposition apparatus according to the present invention is a thin film deposition apparatus in which a linear source 12 for spraying a source gas and a reactive gas in a plasma state relatively moves in a horizontal direction relative to a substrate S to form a thin film on the substrate S .

More specifically, a thin film deposition apparatus according to an embodiment of the present invention includes a vacuum chamber 10 for providing a thin film deposition process environment as shown in FIGS. 1 and 2, A linear source 12 for injecting a reactive gas in a gas and plasma state and a linear movement section 13 for linearly moving the substrate S in a horizontal direction with respect to the linear source 12. [

The vacuum chamber 10 may be any component that provides a processing environment for performing a thin film deposition process.

The vacuum chamber 10 may include a container forming a predetermined internal space and formed with a gate 11 through which the substrate S can pass.

The container may have an exhaust means for maintaining a predetermined pressure on the inner space.

The linear moving part 13 can be any component as long as the substrate S is loaded and linearly moves the substrate S in the horizontal direction with respect to the linear source 12 as a component capable of moving the substrate linearly .

The linear source 12 may be any component provided on the upper portion of the vacuum chamber 10 and capable of injecting a source gas and a reactive gas in a plasma state.

For example, the linear source 12 includes a source gas injection line 1 for injecting a source gas so as to deposit a thin film using an atomic layer deposition process, a reaction gas injection line 3 for injecting a reaction gas in a plasma state ) Are sequentially arranged in a direction perpendicular to the relative movement direction with respect to the substrate (S).

The linear source 12 is arranged in various forms at appropriate positions according to the thin film deposition process conditions in which the exhaust line 2 for sucking and exhausting the gas and the purge gas injection line 4 for injecting the purge gas are to be performed.

In other words, the linear source 12 is controlled in accordance with the thin film deposition process conditions in which the source gas injection line 1, the exhaust line 2, the reaction gas injection line 3 and the purge gas injection line 4 are to be performed, 3a and 3b, and Figs. 4a and 4b.

In addition, the linear source 12 may be provided in a plurality of units as shown in Figs. 2, 3A, and 3B, and Figs. 4A and 4B.

The source gas injection line 1 is configured to inject a source gas such as TMA, and the reaction gas injection line 3 can be configured to inject reactive gases such as O ₂ , NH ₃ , NO _2, and the like. Here, the physical properties of the reaction gas and the source gas are determined according to the thin film to be formed on the substrate (S).

A thin film made of Al ₂ O ₃ , AlON or the like may be formed on the substrate S by the source gas injection line 1 and the reaction gas injection line 3.

The purge gas injection line 4 is configured such that an inert gas such as Ar is injected to remove gas, particles, and the like remaining on the substrate S, and removal of gas, particles, and the like is most effective.

The exhaust line 2 is a component for sucking and exhausting the gas. By sucking the source gas injected from the source gas injection line 1 before the substrate S is moved to the region where the reactive gas is injected, And can be used to suppress the generation of particles due to the reaction of gas.

In this case, when the source gas is left when the substrate S is moved to the region where the reactive gas is injected, the particles are formed by reaction with the reaction gas, and the formed particles are deposited on the substrate S to form a porous thin film But it is possible to suppress the generation of particles due to the reaction of the reaction gas and the suction gas by sucking the source gas injected from the source gas injection line 1. [

On the other hand, there is still a problem in that, despite the suction of the source gas by the exhaust line 2, it remains and reacts with the reaction gas to form particles.

The linear source 12 is provided between the source gas injection line 1 and the reaction gas injection line 3 so that one end of the linear source 12 protrudes downward to prevent the source gas and the reaction gas from being mixed. .

The gas blocking means may have various forms as a constituent element for preventing the source gas and the reaction gas from being mixed with one end protruding downward.

As shown in FIGS. 3A and 3B, the gas-shielding means according to one embodiment protrudes downward from the lower end of the linear source 12 and forms a blocking wall in a direction perpendicular to the moving direction of the substrate S And may include one or more protrusions (14, 15).

The protrusions 14 and 15 protrude downward from the lower end of the linear source 12 as shown in FIG. 3A and FIG. 3B to prevent mixing of the source gas and the reactive gas, .

For example, the projections 14 and 15 are provided in the frame (not shown) with the source gas injection line 1, the reaction gas injection line 3 and the purge gas injection line 3, As shown in FIG.

At this time, the protrusions 14 and 15 are preferably coated with Teflon in consideration of contact with the substrate S.

It is preferable that the blocking walls of the projections 14 and 15 are inclined at least in one direction with respect to the moving direction of the substrate S.

The protrusions 14 and 15 may be provided so as to increase in width from the end toward the substrate S toward the linear source 12. [

Further, the protrusions 14 and 15 may form a curved surface at an end portion facing the substrate S.

The end of the protrusions 14 and 15 having the above configuration is brought close to the substrate S so that the gas that has passed between the end of the protrusions 14 and 15 and the substrate S is sucked into the exhaust line 2 .

Therefore, the suction of the source gas by the exhaust line 2 is smooth by the provision of the projections 14, 15. [

The protrusions 14 and 15 are effective in blocking the flow between the source gas and the reaction gas when constructed in combination with the exhaust line 2.

Therefore, as shown in FIGS. 3A and 3B, the linear source 12 is provided with an exhaust line 2 for sucking and exhausting gas between the source gas injection line 1 and the reactive gas sprayer 3, At this time, the protrusions 14 and 15 are preferably provided between the source gas injection line 1 and the exhaust line 2.

Furthermore, it is more preferable that two or more protrusions 14 and 15 are provided, and that the protrusions 14 and 15 are disposed so as to communicate with the exhaust line 2.

The protrusions 14 and 15 constructed as described above can smoothly suck the source gas by the exhaust line 2 and discharge it to the exhaust line 2 to prevent mixing between the source gas and the reaction gas.

A guide member (not shown) for sucking in the gas sucked into the protruding portions 14 and 15 from the protruding portions 15 and 15 on the side of the exhaust line 2 may be further provided .

The protrusions 14 and 15 preferably have a Teflon coated metal or Teflon material to withstand friction or shock with the substrate S and the like.

The numbers and positions of the protrusions 14 and 15 may be variously set according to the conditions of the thin film deposition process.

On the other hand, the planar shape of the substrate S on which the thin film deposition process is to be performed is rectangular, and the injection regions 12 of the linear source also have a rectangular planar shape.

The linear source 12 is preferably longer than the substrate S with respect to the direction of movement relative to the substrate S in order to perform a smooth film deposition process.

In addition, the reaction gas injection line, the source gas, the reaction gas, and the purge gas injection line can be variously configured as components for injecting the gas.

For example, a plurality of injection lines arranged in a direction perpendicular to the relative movement direction with respect to the substrate S and arranged in the direction of relative movement with respect to the substrate S, (Not shown).

The injection lines may be made of a pipe which is long in a direction perpendicular to the moving direction of the substrate S and has a plurality of injection holes (not shown) toward the substrate S.

The gas supply pipe is connected to the injection line and is a component for transferring the gas, and is formed in a tube shape.

The gas blocking means according to another embodiment protrudes downward from the lower end of the linear source 12 as shown in Figs. 4A to 6, and forms a blocking wall in a direction perpendicular to the moving direction of the substrate S And at least one shielding film 18 capable of being warped toward the moving direction when the substrate S is moved relative to the linear source 12. [

The blocking film 18 is a component for blocking gas flow between the source gas and the reaction gas.

It is preferable to use a member that is sufficiently long toward the surface of the substrate S and is capable of being bent so as to bend in the moving direction when the linear source 12 and the substrate S are moved relative to each other.

The material of the shielding film 18 is preferably plasma-resistant, such as engineering plastics such as PI and PTFE (Teflon).

On the other hand, on the front and rear sides of the blocking film 18 with respect to the relative movement direction of the linear source 12 and the substrate S, a purge gas injection line 4) is preferably installed.

Here, the purge gas injection lines 4 may be separately installed on the front and rear sides of the blocking film 18, or may be installed as one.

It is further preferable that an exhaust line 2 for exhausting a gas such as a purge gas is provided adjacent to the purge gas injection line 4 provided at the front and rear of the blocking film 18.

On the other hand, the blocking film 18 keeps a minute gap from the surface of the substrate S by the purge gas flow on the surface of the substrate S as shown in Figs. 4A and 4B.

On the other hand, when the reaction gas is injected onto the substrate S, it is necessary to change to a plasma state.

Therefore, the reaction gas injection line may be changed into a plasma state by providing a variety of configurations such as changing the plasma state or RPG by providing an electrode in a pipe through which the reaction gas flows, that is, a gas supply pipe.

As a specific example, the linear source 2 may have various shapes such that the reaction gas supplied from a reaction gas supply device (not shown) for supplying a reaction gas is injected into the substrate S as shown in FIG. do.

And the linear source 2 is provided in the flow path 21 in which the induction electric field effect part 23 forming the plasma by the induction electric field flows the reaction gas.

The induction field effect portion 23 is provided on the opposite side of the flow passage 21 with respect to the dielectric 22 and the dielectric 22 made of ceramic or quartz as a constituent element for converting the reaction gas into plasma by the induction field, And at least one electrode 24 to which the electrode 24 is applied.

The dielectric 22 is a component for forming an induced electric field by the electrode 24 and can be installed at any position as long as the reaction gas in the flow path 21 can be changed into a plasma state by induction electric field A part of the flow path 21 can be constituted as shown in Fig.

The electrode 24 is a component that changes the reaction gas to a plasma state by induction electric field through the dielectric 22 by one end being supplied with RF power and the other end being grounded.

The electrodes 24 may have various shapes such as a circular rod or a plate, and may be installed in a variety of pairs. In particular, the electrode 24 may be provided outside the vacuum chamber 11. [

On the other hand, the induced electromagnetically driven part 23 is a constituent element that changes the reaction gas into a plasma state by the ICP method, and any configuration is possible.

For example, the dielectric material 22 may be a hollow tube arranged in the width direction of the substrate S as shown in Figs. 6 and 7.

And the electrode 24 may be installed in the tube of the dielectric 22 made of a hollow tube.

As described above, since the induction electric field generating part 23 is provided in the flow path 21 through which the reaction gas flows, the reaction gas can be easily converted into the plasma state, and the entire structure and assembly of the linear source 12 can be simplified.

1 ... Source gas injection line 2 ... Reaction gas injection line
3 ... purge gas injection line 4 ... exhaust line

Claims (10)

A linear source of a thin film deposition apparatus for forming a thin film on a substrate by moving a linear source for injecting a source gas and a reaction gas in a horizontal direction relative to the substrate,
Wherein the linear source includes a source gas injection line for injecting a source gas and a reaction gas injection line for injecting a reactive gas in a plasma state sequentially in a direction perpendicular to a relative movement direction with respect to the substrate,
Wherein the induction field forming portion for forming a plasma by an induction field is provided in a flow path through which a reaction gas flows. The method according to claim 1,
Wherein the induction electric field forming unit includes a dielectric provided in a flow path through which the reaction gas flows, and at least one electrode provided on the opposite side of the flow path with respect to the dielectric and to which RF power is applied. The method according to claim 1,
Wherein the induction electric field forming unit includes a dielectric made of a hollow tube arranged in the width direction of the substrate, and an electrode installed in the dielectric tube and being supplied with RF power. 4. The method according to any one of claims 1 to 3,
And a gas barrier means protruding downward to prevent mixing of the source gas and the reaction gas is provided between the source gas injection line and the reaction gas injection line. 5. The method of claim 4,
Wherein the gas shielding means includes one or more protrusions protruding downward from a lower end of the linear source and forming a blocking wall in a direction perpendicular to the moving direction of the substrate. 5. The method of claim 4,
Wherein the gas shielding means protrudes downward from a lower end of the linear source and forms a blocking wall in a direction perpendicular to the moving direction of the substrate and has a warp that the substrate can move toward the moving direction when the substrate is moved relative to the linear source Wherein the thin film deposition apparatus comprises at least one shielding film as far as possible. 4. The method according to any one of claims 1 to 3,
Wherein the source gas is TMA, and the reaction gas is at least one of O ₂ , NH _3, and NO ₂ . A linear source provided in the vacuum chamber for spraying a source gas and a reactive gas in a plasma state so as to form a thin film on the substrate relative to the substrate in a horizontal direction relative to the substrate; And a linear movement portion that relatively moves in the horizontal direction with respect to the linear source,
Wherein the lyer source is provided in a flow path through which an induction field forming portion for forming a plasma by an induction field flows. 9. The method of claim 8,
Wherein the induction electric field forming unit includes a dielectric provided in a flow path through which the reaction gas flows, and at least one electrode provided on the opposite side of the flow path with respect to the dielectric and to which RF power is applied. 9. The method of claim 8,
Wherein the induction electric field forming unit includes a dielectric made of a hollow tube arranged in the width direction of the substrate, and an electrode installed in the dielectric tube and being supplied with RF power.

Images