KR101472306B1 - Thin Film Deposition Method, and Thin Film Deposition Apparatus - Google Patents

Abstract

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems and it is an object of the present invention to provide a thin film deposition apparatus capable of minimizing particles when a thin film is formed on a substrate by using an atomic layer deposition process. The thin film deposition apparatus according to the present invention further includes a nozzle unit for exhausting the source gas when the thin film is deposited on the substrate by using the atomic layer deposition process by spraying the source gas and the reactive gas, And thus the formation of a porous thin film can be minimized and a thin film of good quality can be formed.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a thin film deposition apparatus,

The present invention relates to a thin film deposition apparatus for depositing a thin film on a substrate.

The organic electroluminescent display device is a self-luminous display that emits light by electrically exciting a fluorescent organic compound. The organic electroluminescent display device is attracting attention as a next generation display because it can be driven at a low voltage, is easy to be thinned, has a wide viewing angle and fast response speed .

However, the light emitting layer of the organic electroluminescent device has a problem that the light emitting layer is damaged when exposed to moisture and oxygen. Accordingly, a sealing means is provided on a substrate on which an organic electroluminescent device is formed in order to prevent the organic electroluminescent device from being damaged by moisture and oxygen. The sealing means may be provided as an encapsulating substrate or a sealing thin film. As the display becomes smaller and thinner, the sealing means is formed of a sealing film.

Such a sealing thin film is formed by alternately laminating at least four inorganic films and organic films, and has a thickness of 0.5 to 10 mu m. For example, the sealing film may be formed by alternately laminating a first organic film, a first inorganic film, a second organic film, and a second inorganic film.

As described above, the organic light emitting display device can be formed to have a thin thickness by applying a thin sealing film having an inorganic film and an organic film.

For example, a thin sealing thin film formed on an organic light emitting display may be formed of Al ₂ O ₃ , AlON, or the like.

The present invention has been made to solve the above problems, and it is an object of the present invention to provide a thin film deposition apparatus capable of depositing a good thin film by minimizing particle formation when a thin film is formed on a substrate by using an atomic layer deposition process.

According to an aspect of the present invention, there is provided a thin film deposition apparatus for forming a thin film on a substrate by relatively moving a gas injection unit for injecting a source gas and a reactive gas in a horizontal direction relative to the substrate, And a purge gas injection unit for injecting the purge gas are sequentially installed in a direction perpendicular to the relative movement direction with respect to the substrate, And a nozzle portion having one end directed toward the substrate and the other end connected to the exhaust portion so as to be sucked into the exhaust portion by sucking the gas present on the substrate is provided near the boundary between the exhaust portion and the source gas injecting portion A thin film deposition apparatus is provided.

The source gas is TMA, the reaction gas is two, one is O _2, and the other is NH ₃ or NO ₂ .

The reaction gas is preferably plasmaized and injected.

The source gas injection unit, the reaction gas injection unit, and the purge gas injection unit are installed in the frame, and the nozzle unit may further protrude from the frame toward the substrate.

The nozzle unit may have a metal or Teflon material.

The thin film deposition apparatus according to the first embodiment of the present invention further includes a nozzle unit for exhausting the source gas when the thin film is deposited on the substrate by using the atomic layer deposition process by spraying the source gas and the reactive gas, It is possible to minimize the generation of particles due to the reaction of the gas and the formation of the porous thin film thereby to form a thin film of good quality.

The thin film growth apparatus according to the second embodiment of the present invention further includes a blocking film for blocking the flow between the source gas and the reactive gas to minimize the generation of particles due to the reaction of the source gas and the reactive gas and thereby the formation of the porous thin film A thin film of good quality can be formed.

In the third embodiment of the present invention, in depositing a thin film on a substrate by using an atomic layer deposition process by spraying a source gas and a reactive gas, a reaction gas is plasmatized by an ICP method to spray a plasmaized reaction gas onto the substrate A thin film of good quality can be formed.

1 is a cross-sectional view of a thin film deposition apparatus according to an embodiment of the present invention,
Fig. 2 is a sectional view taken along a line II-II in Fig. 1,
FIG. 3 is a side view showing an embodiment of a gas injection unit installed in the thin film deposition apparatus shown in FIG. 1;
FIGS. 4A and 4B are side views showing another embodiment of the gas injection unit installed in the thin film deposition apparatus shown in FIG. 1,
Fig. 4C is a side view of the gas injection unit shown in Fig. 4A seen from Fig. 1 through III-
FIG. 5 is a partial cross-sectional view of one embodiment of the reaction gas injection unit in the gas injection unit installed in the thin film deposition apparatus shown in FIG. 1, taken along line III-III in FIG. 1,
FIG. 6 is a partial cross-sectional view of one embodiment of the reaction gas injection unit of the gas injection unit installed in the thin film deposition apparatus shown in FIG. 1, taken along line III-III in FIG. 1,
FIG. 7 is a side view of the gas injection unit provided with the tubular dielectric member in FIG. 6 as viewed from III-III in FIG. 1;

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a cross-sectional view of a thin film deposition apparatus according to an embodiment of the present invention, FIG. 2 is a sectional view taken along the line II-II in FIG. 1, FIG. 4A is a side view showing another embodiment of the gas injection unit installed in the thin film deposition apparatus shown in FIG. 1, FIG. 4C is a side view showing the gas injection unit shown in FIG. FIG. 5 is a partial cross-sectional view of an embodiment of a reactive gas injecting portion of a gas injecting portion provided in the thin film deposition apparatus shown in FIG. 1, and FIG. 6 is a cross- FIG. 7 is a side view of the gas injection unit provided with the tubular dielectric member in FIG. 1 taken along the line III-III in FIG. 1; FIG. 7 is a partial cross-sectional view of the reactive gas injecting unit in FIG.

The thin film deposition apparatus according to the present invention is a thin film deposition apparatus for forming a thin film on a substrate S by moving a gas spraying unit 12 for spraying a source gas and a reactive gas relative to a substrate S in a horizontal direction.

More specifically, a thin film deposition apparatus according to an embodiment of the present invention includes a vacuum chamber 10 for providing a thin film deposition process environment as shown in FIGS. 1 and 2, And a linear moving part 13 for linearly moving the substrate S in the horizontal direction with respect to the gas ejecting part 12. The gas ejecting part 12 ejects gas,

The vacuum chamber 10 may have any configuration as long as it provides a processing environment for performing a thin film deposition process.

The vacuum chamber 10 may include a container forming a predetermined internal space and formed with a gate 11 through which the substrate S can pass.

The container may have an exhaust means for maintaining a predetermined pressure on the inner space.

The linear moving part 13 can be any structure as long as it can linearly move the substrate S by linearly moving the substrate S in the horizontal direction with respect to the gas ejecting part 12 by loading the substrate S.

The gas injecting unit 12 may have any structure as long as it is provided on the upper portion of the vacuum chamber 10 and can inject the source gas and the reactive gas.

For example, the gas injection unit 12 includes a source gas injection unit 1 for injecting a source gas so as to deposit a thin film using an atomic layer deposition process, a discharge unit 2 for sucking and exhausting the gas, A reactive gas spraying part 3 for spraying a reactive gas and a purge gas spraying part 4 for spraying a purge gas are provided in various forms according to the thin film deposition process conditions to be performed in a direction perpendicular to the relative movement direction with respect to the substrate S. [ .

In other words, the gas jetting section 12 is formed in accordance with the thin film deposition process conditions in which the source gas jetting section 1, the exhausting section 2, the reactive gas jetting section 3 and the purge gas jetting section 4 are to be performed, Various configurations of the numbers and installation numbers are possible as shown in Figs. 4A and 4B.

Here, the gas spraying unit 12 may be provided in a plurality of units as shown in Figs. 2, 4A and 4B.

The source gas injection section 1 is configured to inject a source gas such as TMA and the reaction gas injection section 3 can be configured to inject a reaction gas such as O ₂ , NH ₃ or NO ₂ .

A thin film made of Al ₂ O ₃ , AlON or the like is formed on the substrate S by the source gas injecting section 1 and the reaction gas injecting section 3.

The purge gas spraying section 4 is configured to spray an inert gas such as Ar to remove gas, particles, and the like remaining on the substrate S, and is positioned at the most efficient part to remove gas, particles, and the like.

The exhaust part 2 is a component for sucking and exhausting the gas, and by sucking the source gas injected from the source gas injection part 1 before the reaction gas is injected into the area to be injected, Generation of particles can be suppressed.

Here, when the source gas is left when the reactive gas is moved to the region where the reactive gas is injected, the reactive gas is deposited on the substrate S by reaction with the injected reactive gas to act as a cause of the formation of the porous thin film, 1, it is possible to suppress the generation of particles due to the reaction of the reaction gas and the suction gas.

3, the gas injecting unit 12 can be maintained in a state where the source gas injected from the source gas injecting unit 1 is supplied to the exhausting unit 2, To suck the gas present on the substrate S for smooth suction of the source gas by the substrate 2 so that one end is directed to the substrate S and the other end is communicated with the exhaust part 2 so as to be discharged to the exhaust part 2 The nozzle portion 16 to be formed can be installed in the vicinity of the boundary between the exhaust portion 2 and the source gas jetting portion 1.

The nozzle unit 16 is configured such that one end thereof is directed toward the substrate S and the other end is directed toward the exhaust unit 2 so as to suck the gas present on the substrate S to smoothly suck the source gas by the exhaust unit 2, And is a component that is formed to communicate with the exhaust part 2.

For example, the nozzle unit 16 is provided with a source gas injection unit 1, a reaction gas injection unit 3, and a purge gas injection unit 3 on a frame (not shown) As shown in Fig.

The substrate S is brought close to the end of the nozzle unit 16 so that the gas that has passed between the end of the nozzle unit 16 and the substrate S is further sucked into the exhaust unit 2. [

Therefore, the suction of the source gas by the exhaust part 2 is smooth by the provision of the nozzle part 16. [

The nozzle unit 16 may include a pair of projecting members 14 and 15 spaced apart from each other in a direction perpendicular to the moving direction of the substrate S.

The pair of projecting members 14 and 15 can be installed such that the width thereof increases from the end toward the substrate S toward the exhaust portion 2. [

Further, the pair of projecting members 14 and 15 may form a curved surface at an end portion facing the substrate S.

Further, a guide member (not shown) for sucking the gas sucked by the nozzle unit 16 may be further provided on the upper side of the projecting member 15 on the exhaust part 2 side of the projecting members 14 and 15 have.

The nozzle portion 16 preferably has a metal or Teflon material to withstand friction or impact with the substrate S or the like.

The number and position of the nozzle unit 16 may be variously set according to the conditions of the thin film deposition process.

On the other hand, the planar shape of the substrate S on which the thin film deposition process is to be performed is rectangular, and the injection regions 12 of the gas injection portion also have a rectangular planar shape.

In order to perform a smooth film deposition process, it is preferable that the length of the gas injection part 12 is larger than that of the substrate S with respect to the direction of relative movement with respect to the substrate S.

In addition, the reactive gas spraying portion, the source gas spraying portion, and the purge gas spraying portion may have various configurations as a configuration for spraying the corresponding gas.

For example, a plurality of gas injection members arranged in a direction perpendicular to the relative movement direction with respect to the substrate S and arranged in the direction of relative movement with respect to the substrate S, and a plurality of gas injection members (Not shown) for supplying the gas.

The gas injection member may be a pipe which is long in a direction perpendicular to the moving direction of the substrate S and has a plurality of injection holes (not shown) toward the substrate S.

The gas supply pipe is connected to the gas injection member to transmit the gas, and has a tube shape.

On the other hand, even under the above-described conditions, particles may be generated due to the reaction between the reaction gas and the source gas when the gas is sprayed to the substrate S and the substrate S is relatively moved. And the film quality is deteriorated.

4A to FIG. 5, the gas spraying unit 12 may be provided with one or more shielding films 18 for shielding the gas flow in the relative movement direction with respect to the gas spraying unit 12 and the substrate S.

The blocking film 18 is a component for blocking gas flow between the source gas and the reaction gas.

Specifically, it is preferable that the shielding film 18 is sufficiently long toward the surface of the substrate S and can be bent so as to bend in the direction opposite to the moving direction of the gas spraying portion 12 and the substrate S Do.

The material of the shielding film 18 is preferably plasma-resistant, such as engineering plastics such as PI and PTFE (Teflon).

On the other hand, on the front and rear sides of the blocking film 18 with respect to the relative movement direction of the gas injection part 12 and the substrate S, a purge gas injection part (4) is preferably provided.

Here, the purge gas spraying unit 4 may be installed separately or separately on the front and rear sides of the shielding film 18.

It is further preferable that an exhaust part 2 for exhausting a gas such as a purge gas is provided adjacent to the purge gas injecting part 4 provided in front of and behind the shielding film 18.

On the other hand, the blocking film 18 keeps a minute gap from the surface of the substrate S by the purge gas flow on the surface of the substrate S as shown in Figs. 4A and 4B.

On the other hand, when the reaction gas is injected into the substrate S, it needs to be converted into plasma.

Therefore, the reaction gas injection unit may be formed into a plasma, in which a reactive gas flows, that is, a gas is supplied into the gas supply pipe, and plasma or RPG is used.

As shown in FIG. 5, the gas injector 2 may be configured to inject the reaction gas supplied from the reaction gas supply device (not shown) supplying the reaction gas into the substrate S in various forms .

The gas injector 2 is provided with an induction electric field generating part 23 for generating a plasma by an induction electric field.

The induction field effect portion 23 is provided on the opposite side of the flow passage 21 with respect to the dielectric 22 and the dielectric 22 made of ceramic or quartz as a constituent element for converting the reaction gas into plasma by the induction field, And at least one electrode 24 to which the electrode 24 is applied.

The dielectric 22 can be installed at any position as long as the reaction gas in the flow path 21 can be plasmaized by the induction electric field and constitute a part of the flow path 21 as shown in FIG.

The electrodes 24 may be provided in a pair as a plate-shaped member, or the like. In particular, the electrode 24 may be provided outside the vacuum chamber 11.

On the other hand, the induced electromagnetically driven part 23 can be configured in any way as long as the ICP system is configured.

For example, the dielectric material 22 may be a hollow tube arranged in the width direction of the substrate S as shown in Figs. 6 and 7.

And the electrode 24 may be installed in the tube of the dielectric 22 made of a hollow tube.

1 ... Source gas injection part 2 ... Reaction gas injection part
3 ... purge gas injection part 4 ... exhaust part

Claims (5)

A thin film deposition apparatus for forming a thin film on a substrate by relatively moving a gas injection unit for injecting a source gas and a reaction gas in a horizontal direction with respect to the substrate,
The gas-
A purge gas injection unit for injecting the purge gas and a gas injection unit for injecting the purge gas into the reaction gas injection unit, Direction,
Wherein a nozzle portion, one end of which is directed to the substrate and the other end of which is communicated with the exhausting portion so as to be sucked into the exhaust portion by sucking the gas present on the substrate, is installed near the boundary between the exhaust portion and the source gas injecting portion,
At least one blocking film 18 for blocking the flow of the gas in the relative movement direction with respect to the gas spraying unit 12 and the substrate S is provided,
The shielding film 18 is formed to be long toward the surface of the substrate S and can be bent so as to bend in a direction opposite to the moving direction of the gas spraying unit 12 and the substrate S when the substrate S is relatively moved.
Wherein the source gas is TMA, the reaction gas is two, one is O _2, and the other is NH ₃ or NO ₂ . delete The method according to claim 1,
Wherein the reaction gas is plasmaized and injected. The method according to claim 1,
Wherein the source gas injection unit, the reaction gas injection unit, and the purge gas injection unit are installed in a frame,
Wherein the nozzle part further protrudes from the frame toward the substrate. The method according to claim 1,
Wherein the nozzle unit has a metal or Teflon material.

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