KR20200063120A - Vapor deposition apparatus - Google Patents

Abstract

An embodiment of the present invention relates to a vapor deposition apparatus for forming a deposition film on a substrate. The vapor deposition apparatus includes: a first injection part spraying first material gas in a first direction toward the substrate; a second injection part spraying second material gas in the first direction; an exhaust part located between the first injection part and the second injection part and exhausting exhaust gas in a second direction opposite to the first direction; and first filter parts mounted at an end of the first injection part and an end of the exhaust part, respectively. The first filter parts are spaced apart from each other in the direction parallel to the first direction and include a plurality of plates stacked in parallel with each other wherein each of the plurality of plates includes holes. The first material gas is sprayed in the first direction through the first filter part mounted at the end of the first injection part. The exhaust gas is suctioned in the second direction through the first filter part mounted at the end of the exhaust part. Process efficiency of the vapor deposition apparatus can be improved since the exhaust gas can be uniformly suctioned.

Description

Vapor deposition apparatus

The present invention relates to a vapor deposition apparatus.

Semiconductor devices, display devices, and other electronic devices include a plurality of thin films. There are various methods for forming such a plurality of thin films, of which a vapor deposition method is one method.

The vapor deposition method uses one or more gases as a raw material for forming a thin film. Such vapor deposition methods include chemical vapor deposition (CVD), atomic layer deposition (ALD), and various other methods.

Among them, the atomic layer deposition method injects one raw material gas, purges/pumps it, adsorbs a single molecular layer or more onto the substrate, and then injects another raw material gas and purges/pumps the final desired single atom. A layer or multilayer atomic layer is formed.

On the other hand, among the display devices, the organic light emitting display device has attracted attention as a next-generation display device because it has a wide viewing angle, excellent contrast, and a fast response speed.

The organic light emitting diode display includes an intermediate layer having an organic emission layer between the first and second electrodes facing each other, and includes one or more various thin films. At this time, a deposition process may be used to form a thin film of the organic light emitting diode display.

However, as the organic light-emitting display device becomes larger and requires high resolution, it is not easy to deposit a large area thin film with desired characteristics. In addition, there is a limit to improve the efficiency of the process for forming such a thin film.

An object of the present invention is to provide a vapor deposition apparatus that can easily improve the properties of a deposited film, and is easy to maintain and repair.

An embodiment of the present invention relates to a vapor deposition apparatus for forming a deposition film on a substrate, comprising: a first injection unit for spraying a first source gas in a first direction that is in the direction of the substrate; A second injection unit for injecting a second source gas in the first direction; An exhaust unit positioned between the first injection unit and the second injection unit and exhausting exhaust gas in a second direction opposite to the first direction; And a first filter unit mounted at an end of the first injection unit and an end of the exhaust unit, wherein the first filter units are spaced apart from each other in a direction parallel to the first direction and stacked in parallel with each other. Plates, holes are formed in each of the plurality of plates, the first raw material gas is injected in the first direction through the first filter unit mounted at an end of the first injection unit, and the exhaust gas is Disclosed is a vapor deposition apparatus sucked in the second direction through the first filter portion mounted at an end portion of the exhaust portion.

In this embodiment, in each of the plurality of plates, the first raw material gas may simultaneously pass holes formed in each of the plurality of plates in the first direction.

In this embodiment, the number of holes formed in each of the plurality of plates may increase toward the first direction.

In this embodiment, the first raw material gas may pass through the first filter portion in a direction in which the number of holes increases, and the exhaust gas may pass through the first filter portion in a direction in which the number of holes decreases. have.

In this embodiment, the number of holes formed in each of the plurality of plates may increase 2 or 3 times toward the first direction.

In this embodiment, the size of the holes formed in each of the plurality of plates may decrease toward the first direction.

In the present embodiment, the plurality of plates may be detachably coupled to the first filter unit.

In this embodiment, a purge portion may be further included between the first injection portion and the second injection portion.

In the present exemplary embodiment, the second injection unit may include a plasma generator, a plasma generator having a corresponding surface surrounding the plasma generator, and a plasma generating space formed between the plasma generator and the corresponding surface.

In the present exemplary embodiment, a supply unit supplying the second raw material gas to the plasma generation space may be further included, and a second filter unit may be mounted between the supply unit and the plasma generation space.

In this embodiment, the first filter part and the second filter part may have the same structure.

In this embodiment, the substrate and the vapor deposition apparatus may be formed to move relatively.

According to an embodiment of the present invention, since the raw material gas is uniformly injected on the substrate and the exhaust gas can be uniformly inhaled, the process efficiency of the vapor deposition apparatus can be improved.

In addition, since the injection portion for injecting the raw material gas and the intake portion for intake of the exhaust gas may have the same structure, the structure of the vapor deposition apparatus can be simplified.

In addition, since impurities and the like are filtered by the filter unit during the injection of the raw material gas and the intake of the exhaust gas, and the filter unit is detachably coupled to the vapor deposition apparatus, maintenance of the vapor deposition apparatus can be facilitated.

1 is a cross-sectional view schematically showing a vapor deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view showing a VV cross-section in FIG. 1.
3 is a perspective view showing the filter unit of FIG. 1.
4 is a cross-sectional view showing a modification of the vapor deposition apparatus of FIG. 1.
5 is a cross-sectional view schematically showing an organic light emitting display device manufactured using the vapor deposition apparatus of FIG. 1.
6 is an enlarged view of F in FIG. 5.

The present invention can be applied to a variety of transformations and may have various embodiments, and specific embodiments are illustrated in the drawings and will be described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all conversions, equivalents, and substitutes included in the spirit and scope of the present invention. In the description of the present invention, when it is determined that detailed descriptions of related known technologies may obscure the subject matter of the present invention, detailed descriptions thereof will be omitted.

Terms such as first and second used in the present specification may be used to describe various components, but the components should not be limited by terms. The terms are only used to distinguish one component from other components.

In this specification, when a part such as a layer, film, region, plate, etc. is said to be "on" or "on" another part, this includes the case where another part is "just above" as well as another part in the middle. do.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings. In describing the drawings with reference to the drawings, substantially the same or corresponding components are assigned the same reference numbers, and redundant description thereof will be omitted. Shall be In the drawings, the thickness is enlarged to clearly express the various layers and regions. In the drawings, thicknesses of some layers and regions are exaggerated for convenience of description.

1 is a cross-sectional view schematically showing a vapor deposition apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view showing a V-V cross section of FIG. 1, and FIG. 3 is a perspective view showing a filter unit of FIG. 1.

Referring to the drawings, the vapor deposition apparatus 100 according to an embodiment of the present invention comprises a first injection unit 110 and a first direction for injecting a first raw material gas in a first direction, which is the direction of the substrate S. 2 may include a second injection unit 120 for injecting raw material gas. The first injection unit 110 and the second injection unit 120 may be positioned spaced apart from each other. In addition, the vapor deposition apparatus 100 may further include a purge unit 130 and an exhaust unit 140 positioned between the first injection unit 110 and the second injection unit 120.

The first filter unit 160 may be mounted on the first injection unit 110. The first filter unit 160 is mounted at the end of the first injection unit 110, so that the first raw material gas injected by the first injection unit 110 can be uniformly injected on the substrate S .

To this end, the first filter unit 160 may include a plurality of plates 161 to 164, and the plurality of plates 161 to 164 may be stacked parallel to each other along the first direction. Further, the plurality of plates 161 to 164 are arranged to be spaced apart from each other, and each of the plates 161 to 164 may include holes h1 to h4 through which the first raw material gas passes. Accordingly, the first filter unit 160 adjusts the movement path of the first raw material gas while the first raw material gas is moving in the first direction, so that the first raw material gas is uniformly sprayed on the substrate S. can do.

Hereinafter, the first filter unit 160 will be described in more detail with reference to FIGS. 2 and 3. Meanwhile, in FIGS. 2 and 3, the first plate 161, the second plate 162, the third plate 163, and the fourth plate in which the first filter units 160 are sequentially stacked along the first direction ( 164), but the present invention is not limited to this. That is, the first filter unit 160 may include various numbers of plates in order to uniformly spray the first raw material gas onto the substrate S.

2 and 3, the first plate 161, the second plate 162, the third plate 163, and the fourth plate 164 are sequentially stacked along the first direction to form a first plate 161 may be positioned farthest from the substrate S, and the fourth plate 164 may be positioned closest to the substrate S.

First, when comparing the first plate 161 and the second plate 162, the first plate 161 is formed on the second plate 162 disposed closer to the substrate S along the first direction than the first plate 161 The number of 2 holes h2 may be greater than the number of first holes h1 formed in the first plate 161. For example, the number of second holes h2 may be two to three times the number of first holes h1.

On the other hand, in order for the first raw material gas passing through the first holes h1 to reach the second holes h2 with an equal average travel distance, the first holes h1 are second holes formed around them. It is preferred to be located in the center of (h2).

For example, as illustrated in the drawing, when the number of second holes h2 is twice the number of first holes h1, any one first hole h1 has two second holes h2. It can be located on the midpoint of the line segment connecting them. In addition, when the number of second holes h2 is three times the number of first holes h1, three adjacent second holes h2 form an equilateral triangle, and the first hole h1 has a second hole h2 ) May be located on the center of the equilateral triangle formed.

In addition, in order to pass a larger amount of the first raw material gas, the size of the first hole h1 may be larger than the size of the second hole h2.

As described above, when the first holes h1 and the second holes h2 are formed, as the first raw material gas passes through the second plate 162, the first raw material gas is applied to the first filter unit 160. It can spread more widely and evenly from the inside.

Likewise, the number of third holes h3 formed in the third plate 163 disposed closer to the substrate S along the first direction than the second plate 162 is in the second plate 162. The number of second holes h2 formed may be greater, and the number of fourth holes h4 formed in the fourth plate 164 may be greater than the number of third holes h3.

In addition, in order to spread evenly with a uniform average travel distance of the first raw material gas, each second hole h2 is located in the center of the third holes h3 formed around it, and each third hole h3 ) Are preferably located in the center of the fourth holes (h4) formed around it. In addition, the size of the second hole h2 along the first direction toward the fourth hole h4 may decrease.

Therefore, as the first raw material gas moves toward the substrate S, the first raw material gas is evenly distributed over the entire first filter unit 160, so that the first raw material gas is uniformly sprayed on the substrate S. By doing so, the properties of the thin film formed on the substrate S can be easily improved.

In addition, since the first source gas can reach the fourth holes h4 with an equal average travel distance, there is no pressure difference between the fourth holes h4 through which the first source gas is finally discharged. Therefore, even if the first raw material gas is concerned about the condensation phenomenon according to the pressure, it can be stably applied.

Further, during the movement of the first source gas, impurities such as particles contained in the first source gas may be filtered by a plurality of plates 161 to 164.

Meanwhile, in FIGS. 2 and 3, the number of holes h1 to h4 formed in each of the plates 161 to 164 increases by a factor of two as the first plate 161 moves to the fourth plate 164. However, the present invention is not limited to this. For example, as the number of holes h1 to h4 formed in the respective plates 161 to 164 increases from the first plate 161 to the fourth plate 164, the number may increase by 3 times or 4 times or more N times. Or may increase irregularly.

The plurality of plates 161 to 164 may be formed of a material having excellent corrosion resistance, and may be detachably coupled to the first filter unit 160. Accordingly, the plurality of plates 161 to 164 may be periodically replaced, and particles filtered by the plurality of distribution plates 161 to 164 may be easily removed. Therefore, maintenance and repair of the vapor deposition apparatus 100 may be easy.

Referring to FIG. 1 again, the second injection unit 120 may further include a plasma generation unit 150. The plasma generator 150 may include a plasma generator 152, a corresponding surface 154 surrounding the plasma generator 152, and a plasma generation space 156 formed between the plasma generator 152 and the corresponding surface 154. have.

The plasma generator 152 may be a rod-shaped electrode around which a voltage is applied, and the corresponding surface 154 may be a grounded electrode. However, the present invention is not limited to this, and the plasma generator 152 is grounded, and a voltage may be applied to the corresponding surface 154. When a potential difference is generated between the plasma generator 152 and the corresponding surface 154, plasma is generated in the plasma generation space 156, and the second source gas is radically generated in the plasma generation space 156. Can change.

Meanwhile, FIG. 1 illustrates that the first injection unit 110 and the second injection unit 120 are formed one by one in the vapor deposition apparatus 100, but the present invention is not limited thereto. That is, the first injection unit 110 and the second injection unit 120 may be formed in plural, respectively, wherein the plurality of first injection units 110 and the second injection units 120 alternate with each other. Can be deployed.

The purge unit 130 is located after the first injection unit 110 or the second injection unit 120 based on the moving direction of the substrate S, and injects the purge gas in the first direction, which is the direction of the substrate S do. The purge gas may be a gas that does not affect deposition, for example, argon gas or nitrogen gas. When the purge gas is sprayed onto the substrate S by the purge unit 130, the first raw material gas or the second raw material gas that has not reacted to the formation of the thin film and by-products remaining during the deposition process are physically removed from the substrate S. Can be separated.

The exhaust unit 140 is located after the first injection unit 110 or the second injection unit 120 based on the movement direction of the substrate S, and is separated from the substrate S by the purge unit 130 Exhaust gases such as by-products and excess gas are exhausted in a second direction opposite to the first direction.

The first filter unit 160 described above may be mounted on the exhaust unit 140. Therefore, the exhaust unit 140 and the first injection unit 110 may have the same structure. Therefore, the overall configuration of the vapor deposition apparatus 100 can be simplified.

Meanwhile, when the exhaust unit 140 is exhausted, the exhaust gas moves in a second direction opposite to the first direction. However, since the holes h1 to h4 having the above-described relationship are formed in the plurality of plates 161 to 164 included in the first filter unit 160, the exhaust gas is also inhaled while passing through an equal average travel distance. Can be. Therefore, uniform intake of exhaust gas is possible.

Particularly, during exhaust, raw material gases may be deposited on the sidewall of the exhaust unit 140. The first filter unit 160 is mounted at the end of the exhaust unit 140, so that the plurality of plates 161 to 164 By acting as a mounting plate, it is possible to prevent raw material gases from being deposited on the sidewall of the exhaust unit 140. In addition, since the plurality of plates 161 to 164 can be detachably coupled to the filter unit 160, the plurality of plates 161 to 164 can be replaced, and the plurality of distribution plates 161 to Since the thin film or the like formed on 164) can be easily removed, maintenance and repair of the vapor deposition apparatus 100 may be easy.

Hereinafter, a method of forming a thin film on the substrate S will be briefly described with reference to FIG. 1. Specifically, the case where the thin film is formed while the substrate S moves in one direction is described, and the thin film formed on the substrate S is assumed to be AlxOy.

First, when the substrate S, which is the material to be deposited, is disposed to correspond to the first injection unit 110, the first injection unit 110 sprays the first raw material gas in the first direction, which is the substrate S direction. In this case, the first raw material gas may be uniformly injected on the substrate S while passing through the first filter unit 160.

The first raw material gas may be, for example, a gas containing an aluminum (Al) atom such as trimethyl aluminum (TMA) in a gaseous state. Through this, an adsorption layer containing Al is formed on the upper surface of the substrate S, and the formed adsorption layer may include both a chemical adsorption layer and a physical adsorption layer.

On the other hand, among the adsorption layers formed on the upper surface of the substrate S, the physical adsorption layer having weak intermolecular bonding force is ejected from the purge portion 130 located after the first injection portion 110 based on the traveling direction of the substrate S. It is separated from the substrate S by the purge gas. In addition, the physical adsorption layer separated from the substrate S is effectively removed from the substrate S through the pumping of the exhaust portion 140 located next to the first injection portion 110 based on the traveling direction of the substrate S. Can be removed. At this time, since the first filter unit 160 is mounted on the exhaust unit 140, the physical adsorption layer may be uniformly removed from the substrate S.

Subsequently, when the substrate S is disposed to correspond to the second injection unit 120, the second raw material gas is injected through the second injection unit 120 in the first direction, which is the direction of the substrate S. The second source gas may have a radical form. For example, the second source gas may contain oxygen radicals. The oxygen radical may be formed by injecting H ₂ O, O ₂ , N ₂ O, etc. into the plasma generating unit 150 to be described later. The second raw material gas replaces the chemical adsorption layer formed of the first raw material gas already adsorbed on the substrate S and a part of the reaction or chemical adsorption layer to finally form a desired deposition layer, for example, an AlxOy layer. Can be. However, the excess second raw material gas may form a physical adsorption layer and remain on the substrate S.

The physical adsorption layer of the second raw material gas remaining on the substrate S is applied to the purge gas injected from the purge unit 130 located next to the second injection unit 120 based on the traveling direction of the substrate S. It is separated from the substrate (S) by the substrate S through the pumping of the exhaust portion 140 is located next to the second injection unit 120 based on the traveling direction of the substrate S, the first filter unit 160 is mounted ( S) can be uniformly removed from the substrate S throughout. Therefore, a single atomic layer desired may be formed on the substrate S while the substrate S passes through the lower portion of the vapor deposition apparatus 100.

On the other hand, in Figure 1, the substrate S is moved in one direction, the substrate S and the vapor deposition apparatus 100 are relatively moved to illustrate the deposition process, but the present invention is not limited to this. For example, during the deposition process, the substrate S may reciprocate in the lower portion of the vapor deposition apparatus 100, or, the position of the substrate S is fixed, and the vapor deposition apparatus 100 moves continuously. A deposition process may be performed.

4 is a cross-sectional view showing a modification of the vapor deposition apparatus of FIG. 1.

The vapor deposition apparatus 200 illustrated in FIG. 4 may include a first injection unit 210, a purge unit 230, an exhaust unit 240, and a second injection unit 220.

A first filter unit 260 may be mounted at ends of the first injection unit 210 and the exhaust unit 240. In addition, the second injection unit 220 includes a plasma generator 252, a corresponding surface 254 surrounding the plasma generator 252, and a plasma generation space 256 formed between the plasma generator 252 and the corresponding surface 254. A plasma generation unit 250 provided may be further included.

The first injection unit 210, the second injection unit 220, the purge unit 230, the exhaust unit 240, the plasma generation unit 250 and the first filter unit 260 are illustrated in FIGS. 1 to 3 Since the first injection unit 110, the second injection unit 120, the purge unit 130, the exhaust unit 140, the plasma generation unit 150 and the first filter unit 160 described above are the same, respectively, and are repeated. It is not explained.

Referring to FIG. 4, the vapor deposition apparatus 200 may further include a supply unit that supplies a second raw material gas to the plasma generation space 256, and a second filter unit 280 may be mounted on the supply unit. .

The supply unit may be provided with a second source gas from an external tank (not shown) or the like, and may have a through-hole shape to transfer it to the plasma generation space 256, but is not limited thereto. In addition, the number of supply parts may be variously determined according to the size of the substrate S, which is the material to be deposited to undergo the deposition process.

The second filter unit 280 may have the same structure as the first filter unit 160 illustrated and described in FIGS. 2 and 3. That is, the second filter unit 280 may include a plurality of plates stacked parallel to each other along the first direction, and holes through which the second source gas passes may be formed in each of the plurality of plates.

Therefore, the second raw material gas may be uniformly supplied to the plasma generation space 256 along the longitudinal direction of the plasma generation space 256. In addition, since the second raw material gas can be injected into the plasma generating space 256 with a low pressure, the second raw material gas can have a radical form more effectively, thereby improving the deposition efficiency of the vapor deposition apparatus 200. Can be.

5 is a cross-sectional view schematically showing an organic light emitting display device manufactured using the vapor deposition apparatus of FIG. 1, and FIG. 6 is an enlarged view of F of FIG. 5.

An organic light emitting display apparatus (10) is formed on the substrate 30. The substrate 30 may be formed of a glass material, a plastic material, or a metal material.

A buffer layer 31 is formed on the substrate 30 to provide a flat surface on the substrate 30 and to contain moisture and foreign matters in the direction of the substrate 30 to prevent penetration of moisture and foreign substances.

On the buffer layer 31, a thin film transistor (TFT) 40, a capacitor 50, and an organic light emitting device 60 are formed. The thin film transistor 40 largely includes an active layer 41, a gate electrode 42, and a source/drain electrode 43. The organic light emitting diode 60 includes a first electrode 61, a second electrode 62 and an intermediate layer 63.

The capacitor 50 includes a first capacitor electrode 51 and a second capacitor electrode 52.

Specifically, an active layer 41 formed in a predetermined pattern is disposed on the upper surface of the buffer layer 31. The active layer 41 may contain an inorganic semiconductor material such as silicon, an organic semiconductor material, or an oxide semiconductor material, and may be formed by implanting a p-type or n-type dopant. The first capacitor electrode 51 is formed on the same layer as the active layer 41 and may be formed of the same material as the active layer 41.

A gate insulating film 32 is formed on the active layer 41. The gate electrode 42 is formed on the gate insulating layer 32 to correspond to the active layer 41. An interlayer insulating film 33 is formed to cover the gate electrode 42, and a source/drain electrode 43 is formed on the interlayer insulating film 33, and is formed to contact a predetermined region of the active layer 41. The second capacitor electrode 52 is formed on the same layer as the source/drain electrode 43, and may be formed of the same material as the source/drain electrode 43.

A passivation layer 34 is formed to cover the source/drain electrodes 43, and an additional insulating layer may be further formed on the passivation layer 34 to planarize the thin film transistor 40.

The first electrode 61 is formed on the passivation layer 34. The first electrode 61 is formed to be electrically connected to any one of the source/drain electrodes 43. Then, a pixel defining layer 35 is formed to cover the first electrode 61. After a predetermined opening 64 is formed in the pixel defining film 35, an intermediate layer 63 including an organic light emitting layer is formed in a region defined by the opening 64. The second electrode 62 is formed on the intermediate layer 63.

An encapsulation layer 70 is formed on the second electrode 62. The encapsulation layer 70 may contain an organic material or an inorganic material, and may have a structure in which organic and inorganic materials are alternately stacked.

The encapsulation layer 70 may be formed using any one of the above-described vapor deposition apparatuses (100 in FIG. 1 and 200 in FIG. 4) of the present invention. That is, the desired layer may be formed while passing the substrate 30 on which the second electrode 62 is formed through any one of the vapor deposition apparatuses (100 in FIG. 1 and 200 in FIG. 4) of the present invention.

In particular, the encapsulation layer 70 includes an inorganic layer 71 and an organic layer 72, the inorganic layer 71 includes a plurality of layers 71a, 71b, and 71c, and the organic layer 72 includes a plurality of layers (72a, 72b, 72c). At this time, a plurality of layers 71a, 71b, and 71c of the inorganic layer 71 may be formed using any one of the vapor deposition apparatuses of the present invention (100 of FIG. 1 and 200 of FIG. 4).

However, the present invention is not limited to this. That is, the vapor deposition devices of the present invention include other insulating films such as the buffer layer 31, the gate insulating film 32, the interlayer insulating film 33, the passivation layer 34, and the pixel defining layer 35 of the organic light emitting display device 10 ( 100 in FIG. 1, 200 in FIG. 4).

Also, various other thin films such as the active layer 41, the gate electrode 42, the source/drain electrode 43, the first electrode 61, the intermediate layer 63, and the second electrode 62 are vapor deposition apparatuses of the present invention. It is of course possible to form any one of (100 in FIG. 1 and 400 in FIG. 2).

As described above, when any one of the vapor deposition apparatuses of the present invention (100 of FIG. 1 and 200 of FIG. 4) is used, the characteristics of the deposited film formed on the organic light emitting display device 10 are improved, resulting in an organic light emitting display device ( The electrical and image quality characteristics of 10) can be improved.

The present invention has been described with reference to the embodiments shown in the drawings, but these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

10: organic light emitting diode display
S: Substrate
100, 200: vapor deposition apparatus
110, 210: first injection unit
120, 220: second injection unit
130, 230: purge
140, 240: exhaust
150, 250: plasma generator
152, 252: plasma generator
154, 254: corresponding side
156, 256: plasma generation space
160: first filter unit
161: first plate
162: second plate
163: third plate
164: fourth plate
h1: Hall 1
h2: second hole
h3: hole 3
h4: Hall 4
280: second filter unit

Claims (12)

As a vapor deposition apparatus for forming a deposition film on a substrate,
A first injection unit for ejecting a first raw material gas in a first direction that is the substrate direction;
A second injection unit for injecting a second source gas in the first direction;
An exhaust unit positioned between the first injection unit and the second injection unit and exhausting exhaust gas in a second direction opposite to the first direction; And
Includes; first filter portion mounted to the end of the first injection portion and the end portion of the exhaust portion, respectively,
The first filter unit is provided with a plurality of plates spaced apart from each other in a direction parallel to the first direction and stacked parallel to each other, and holes are formed in each of the plurality of plates,
The first raw material gas is injected in the first direction through the first filter unit mounted at the end of the first injection unit, and the exhaust gas is directed in the second direction through the first filter unit mounted at the end of the exhaust unit. Vapor deposition device that is sucked into. According to claim 1,
In each of the plurality of plates, the first source gas is a vapor deposition apparatus that simultaneously passes holes formed in each of the plurality of plates in the first direction. According to claim 1,
The number of holes formed in each of the plurality of plates increases the vapor deposition apparatus toward the first direction. According to claim 3,
The first raw material gas passes through the first filter unit in a direction in which the number of holes increases, and the exhaust gas passes through the first filter unit in a direction in which the number of holes decreases. According to claim 3,
A vapor deposition apparatus in which the number of holes formed in each of the plurality of plates increases 2 or 3 times as it goes in the first direction. According to claim 3,
The size of the holes formed in each of the plurality of plates decreases as it goes toward the first direction. According to claim 1,
The plurality of plates are vapor-deposited devices detachably coupled to the first filter unit. According to claim 1,
A vapor deposition apparatus further comprising a purge portion between the first injection portion and the second injection portion. According to claim 1,
The second injection unit, a vapor deposition apparatus including a plasma generator, a plasma generator having a corresponding surface surrounding the plasma generator and a plasma generation space formed between the plasma generator and the corresponding surface. The method of claim 9,
Further comprising a supply unit for supplying the second raw material gas to the plasma generating space,
A vapor deposition apparatus equipped with a second filter unit between the supply unit and the plasma generation space. The method of claim 10,
The vapor deposition apparatus having the same structure as the first filter portion and the second filter portion. According to claim 1,
The substrate and the vapor deposition apparatus is a vapor deposition apparatus formed to move relatively.

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