KR20140140461A - Thin Film Deposition Method, and Thin Film Deposition Apparatus - Google Patents

Abstract

The purpose of the present invention is to provide a thin film deposition apparatus capable of forming a plurality of thin film layers with different compositions through one thin film deposition apparatus to solve the problem. The present invention forms the thin film layers with different compositions through one thin film deposition apparatus by forming a gas spray unit on a substrate to arrange a plurality of spray regions to which different reactive gases are sprayed in a relative movement direction with regard to the substrate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a thin film deposition apparatus,

The present invention relates to a thin film deposition apparatus for depositing a thin film on a substrate.

The organic electroluminescent display device is a self-luminous display that emits light by electrically exciting a fluorescent organic compound. The organic electroluminescent display device is attracting attention as a next generation display because it can be driven at a low voltage, is easy to be thinned, has a wide viewing angle and fast response speed .

However, the light emitting layer of the organic electroluminescent device has a problem that the light emitting layer is damaged when exposed to moisture and oxygen. Accordingly, a sealing means is provided on a substrate on which an organic electroluminescent device is formed in order to prevent the organic electroluminescent device from being damaged by moisture and oxygen. The sealing means may be provided as an encapsulating substrate or a sealing thin film. As the display becomes smaller and thinner, the sealing means is formed of a sealing film.

Such a sealing thin film is formed by alternately laminating at least four inorganic films and organic films, and has a thickness of 0.5 to 10 mu m. For example, the sealing film may be formed by alternately laminating a first organic film, a first inorganic film, a second organic film, and a second inorganic film.

As described above, the organic light emitting display device can be formed to have a thin thickness by applying a thin sealing film having an inorganic film and an organic film.

For example, Al ₂ O ₃ and AlON may be sequentially formed in the thin sealing thin film formed in the organic electroluminescent display device. Herein, Al ₂ O ₃ and AlON are sequentially formed by a plurality of thin film deposition apparatuses.

However, as Al ₂ O ₃ and AlON are sequentially formed as described above, a separate thin film deposition apparatus is required, which increases the throughput of the manufacturing equipment for forming the thin film, and ultimately increases the manufacturing cost of the organic light emitting display There is a problem to increase.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a thin film deposition apparatus capable of forming a plurality of thin film layers having different compositions by a thin film deposition apparatus.

According to an aspect of the present invention, there is provided a thin film deposition apparatus for forming a thin film on a substrate by relatively moving a gas injection unit injecting a source gas and a reactive gas in a horizontal direction relative to the substrate, A plurality of injection regions are disposed in a relative movement direction with respect to the substrate, and each of the plurality of injection regions is provided with a plurality of reaction gas injection portions for injecting the corresponding reaction gas, and the source gas is injected into the plurality of injection regions There is provided a thin film deposition apparatus provided with a plurality of source gas injection portions.

The substrate is rectangular, and the jetting regions of the gas injection portion may be rectangular.

Preferably, the length of the gas injection portion is larger than that of the substrate with respect to the direction of movement relative to the substrate.

The reaction gas injection units and the source gas injection unit may include a plurality of gas injection members arranged in a direction perpendicular to a relative movement direction with respect to the substrate and arranged in a direction of relative movement with respect to the substrate, And one or more gas supply pipes connecting the device.

The source gas is TMA, the reaction gas is two, one is O ₂ and the other is NH ₃ or NO ₂ Can be used.

A dielectric plate is provided on the upper side of the plurality of gas injection members of the reaction gas injection units, and a plasma forming member for applying RF power to the upper side of the dielectric plate to plasmaize the reaction gas below the dielectric plate by an induction field .

The dielectric plate and the plasma forming member are disposed in parallel with the gas injection members, and insertion holes into which the gas supply pipe is inserted may be formed.

The thin film deposition apparatus according to the present invention includes a gas injection unit for forming a plurality of thin film layers having different compositions by arranging a plurality of injection regions in which a reaction gas is injected on a substrate in a relative movement direction with respect to a substrate, .

In particular, since the formation of a plurality of thin film layers having different compositions is performed by one thin film deposition apparatus, the space occupied by the substrate processing apparatus for substrate fabrication can be reduced, and the manufacturing cost can be substantially reduced. As the thin film layers are formed, the entire process execution time can be reduced.

1 is a cross-sectional view of a thin film deposition apparatus according to an embodiment of the present invention,
FIG. 2 is an exploded perspective view showing an example of a gas injection unit installed in the thin film deposition apparatus of FIG. 1,
Fig. 3 is a plan view of the gas injection portion of Fig. 2,
Fig. 4 is a cross-sectional view of the gas injection portion of Fig. 2;

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a cross-sectional view of a thin film deposition apparatus according to an embodiment of the present invention, FIG. 2 is an exploded perspective view showing an example of a gas injection unit installed in the thin film deposition apparatus of FIG. 1, 4 is a cross-sectional view of the gas injection portion of Fig. 2;

The thin film deposition apparatus according to the present invention is a thin film deposition apparatus for forming a thin film on a substrate S by moving a gas spraying unit 12 for spraying a source gas and a reactive gas relative to a substrate S in a horizontal direction.

More specifically, a thin film deposition apparatus according to an embodiment of the present invention includes a vacuum chamber 10 for providing a thin film deposition process environment, as shown in FIG. 1, A gas injecting section 12 for injecting gas, and a linear moving section 13 for linearly moving the substrate in the horizontal direction with respect to the gas injecting section.

The vacuum chamber 10 may have any configuration as long as it provides a processing environment for performing a thin film deposition process.

The vacuum chamber 10 may include a container forming a predetermined internal space and formed with a gate 11 through which the substrate S can pass.

The container may have an exhaust means for maintaining a predetermined pressure on the inner space.

The linear moving part 13 can be any structure as long as it can linearly move the substrate S by linearly moving the substrate S in the horizontal direction with respect to the gas ejecting part 12 by loading the substrate S.

The gas injecting unit 12 may have any structure as long as it is provided on the upper portion of the vacuum chamber 10 and can inject the source gas and the reactive gas.

For example, as shown in FIG. 2 to FIG. 4, the gas spraying unit 12 is provided with a plurality of jetting regions A1 and A2 through which a reaction gas is jetted onto the substrate S, Direction.

Different kinds of reaction gases are injected into the injection regions A1 and A2, and one or more reaction gas injection portions for injecting gas are installed in the respective injection regions A1 and A2.

A plurality of source gas injecting parts for injecting a source gas are provided in all of the injection areas A1 and A2.

Here, the type and the number of the source gas and the reaction gas may be varied depending on the process conditions. The source gas may be TMA, the reaction gas may be two, one may be O _2, and the other may be NH ₃ or NO ₂ .

In this way, two ejection regions in which two reaction gases, that is, O ₂ NH ₃ are respectively injected, are set so that a thin film composed of Al ₂ O ₃ and AlON is sequentially formed on the surface of the substrate S do.

On the other hand, the planar shape of the substrate S on which the thin film deposition process is to be performed is rectangular, and the injection regions 12 of the gas injection portion also have a rectangular planar shape.

In order to perform a smooth film deposition process, it is preferable that the length of the gas injection part 12 is larger than that of the substrate S with respect to the direction of relative movement with respect to the substrate S.

Further, the reaction gas injection units and the source gas injection unit can have various configurations as a configuration for gas injection.

A plurality of gas injection members 25 and 30 arranged in a direction perpendicular to the relative movement direction with respect to the substrate S and arranged in the direction of relative movement with respect to the substrate S, 25, 30) to the gas supply device (26, 29).

The gas injection members 25 and 30 may be made of a pipe which is long in a direction perpendicular to the moving direction of the substrate S and in which a plurality of spray holes (not shown) are formed toward the substrate S.

The gas supply pipes 26 and 29 are connected to the gas injection members 25 and 30 so as to transmit gas and are formed in a tube shape.

On the other hand, when the reaction gas is injected into the substrate S, it needs to be converted into plasma.

Therefore, the gas injection unit 11 is provided with the dielectric plate 27 on the upper side of the plurality of gas injection members 25 of the reaction gas injection units, and RF power is applied to the upper side of the dielectric plate 27 by the induction field A plurality of plasma forming members 28 for plasma-forming the reaction gas under the dielectric plate 27 may be combined.

And the dielectric plate 27 and the plasma forming member 28 are disposed in parallel with the gas injection members 25 and the insertion holes into which the gas supply pipe 26 is inserted can be formed and coupled to the gas supply pipe 26.

The plasma forming member 28 is configured to plasmaize the reaction gas under the dielectric plate 27 by applying and grounding the RF power source, that is, by the ICP method, and RF power can be applied to the power applying stage 31 .

In this way, by providing the dielectric plate 27 and the plasma forming member 28, the gas spraying unit 11 can form a more stable thin film on the substrate S by plasma-forming the reaction gas by the ICP method.

Claims (7)

A thin film deposition apparatus for forming a thin film on a substrate by relatively moving a gas injection unit for injecting a source gas and a reaction gas in a horizontal direction with respect to the substrate,
Wherein the gas ejecting portion is disposed in a direction in which the plurality of ejection regions to which the other reaction gas is ejected are moved in the relative movement direction with respect to the substrate
Wherein each of the plurality of ejection regions is provided with a plurality of reaction gas ejecting portions for ejecting the corresponding reactive gas and a plurality of source gas ejecting portions for ejecting the source gas to all of the plurality of ejection regions. The method according to claim 1,
Wherein the substrate is rectangular, and the injection regions of the gas injection portion are rectangular. The method according to claim 1,
Wherein the gas injection unit has a length larger than that of the substrate with respect to the direction of movement relative to the substrate. The method according to claim 1,
The reaction gas injection units and the source gas injection unit
A plurality of gas injection members arranged in a direction perpendicular to the relative movement direction with respect to the substrate and arranged in a direction of relative movement with respect to the substrate and one or more gas supply pipes connecting the gas injection members to the gas supply device And the thin film deposition apparatus. 5. The method of claim 4,
Wherein the source gas is TMA, the reaction gas is two, one is O _2, and the other is NH ₃ or NO ₂ .
A dielectric plate is provided on the upper side of the plurality of gas injection members of the reaction gas injection units,
Wherein a plasma generating member is coupled to the dielectric plate to apply plasma power to the reactive gas below the dielectric plate by an RF electric power applied to the dielectric plate. The method according to claim 6,
Wherein the dielectric plate and the plasma forming member are disposed in parallel with the gas injection members, and insertion holes into which the gas supply pipe is inserted are formed. 7. The method according to any one of claims 1 to 6,
Wherein the source gas is TMA, the reaction gas is two, one is O _2, and the other is NH ₃ or NO ₂ .

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