KR20160131442A - Plasma module and atomic layer deposition apparatus of having it, and a atomic layer deposition method using the same - Google Patents

Plasma module and atomic layer deposition apparatus of having it, and a atomic layer deposition method using the same Download PDF

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KR20160131442A
KR20160131442A KR1020150063840A KR20150063840A KR20160131442A KR 20160131442 A KR20160131442 A KR 20160131442A KR 1020150063840 A KR1020150063840 A KR 1020150063840A KR 20150063840 A KR20150063840 A KR 20150063840A KR 20160131442 A KR20160131442 A KR 20160131442A
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plasma
substrate
module
stabilizing plate
plasma stabilizing
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KR1020150063840A
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Korean (ko)
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KR101939275B1 (en
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김성열
이재승
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에이피시스템 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)

Abstract

The present invention relates to a plasma module, an atomic layer deposition apparatus using the same, and a method of depositing an atomic layer using the atomic layer deposition apparatus. In particular, the present invention relates to a plasma module, And a linear plasma module disposed side by side with the source module and injecting a reaction material into the substrate, wherein the plasma module is disposed between the plasma generating space and the substrate And the plasma stabilizing plate including an opening portion formed at least in part through the region, the plasma reaction gas discharged to the substrate can be easily controlled.
That is, by allowing the plasma generating gas to be discharged through the openings formed in the plasma stabilizing plate disposed between the space in which the plasma is generated and the substrate, the supply of the ion energy and the radicals generated from the plasma can be easily controlled, .
In addition, it is possible to easily deposit different raw material layers in a single chamber by allowing the substrate to pass through a section corresponding to the linear modules injected with different raw materials. Accordingly, it is possible to solve the problem that the apparatus is enlarged to be formed in mutually independent spaces.

Description

TECHNICAL FIELD [0001] The present invention relates to a plasma module, an atomic layer deposition apparatus including the same, and an atomic layer deposition method using the atomic layer deposition apparatus.

The present invention relates to a plasma module and an atomic layer deposition apparatus including the same, and more particularly, to a plasma module capable of easily controlling a plasma reaction gas discharged to a substrate, A deposition apparatus and an atomic layer deposition method using the same are provided.

In general, chemical vapor deposition (CVD) and atomic layer deposition (ALD) are known as a thin film deposition method for forming a film on a substrate such as a semiconductor wafer (hereinafter referred to as a 'substrate'). In particular, PE (Plasma Enhanced) -ALD, PE-CVD, and radical deposition methods using a plasma capable of activating a source gas to deposit a high-quality thin film at a low temperature have been used.

Among them, the atomic layer forming apparatus for carrying out the PE (Plasma-Enhanced) -ALD method is provided with a support portion in which a substrate can be placed in a chamber, and a module for forming a source material layer and a reactive material layer respectively on the substrate Respectively.

In the atomic layer deposition method using the atomic layer forming apparatus, a source material is sprayed onto a substrate, a substrate is moved, and a reactive material layer is formed on the substrate on which the source material is adsorbed through a plasma reaction gas. Accordingly, the layer of the source material physically adsorbed on the substrate surface can react with the plasma reaction gas to form a material layer.

However, in the above process, due to the movement of the substrate by the support, the reaction gas becomes unstable due to the plasma, which causes a problem that the film formed on the substrate is not formed uniformly.

Further, when the substrate is moved, the region where the plasma reaction gas is formed spreads to the module forming the source material layer, so that the process of the module for forming the source material layer spreads to the outer side and the RF power is increased. The plasma discharge region can be enlarged into the region where the plasma is generated and the particles are generated due to the vapor phase reaction.

As described above, the non-uniformity of the film and the generation of the particles lead to a problem of deteriorating the characteristics of the semiconductor device, thereby reducing the efficiency and productivity of the process.

KR 1384980 B

The present invention provides a plasma module capable of forming layers using different materials in a single chamber, an atomic layer deposition apparatus including the same, and an atomic layer deposition method using the same.

The present invention provides a plasma module capable of increasing the uniformity of a film formed on a substrate by controlling the ion energy and the amount of radicals generated from the plasma, an atomic layer deposition apparatus including the plasma module, and an atomic layer deposition method using the same.

The present invention provides a plasma module capable of suppressing and preventing a gas phase reaction between different materials, an atomic layer deposition apparatus including the plasma module, and an atomic layer deposition method using the atomic layer deposition apparatus.

A plasma module according to an embodiment of the present invention includes an electrode unit including a shower head and disposed across the substrate in a direction crossing the one direction on a substrate movable in one direction, And a plasma stabilizing plate disposed between the showerhead and the substrate and including an opening formed at least in a part of the region.

The plasma stabilizing plate may be formed with alternating openings and non-openings on the basis of the moving direction of the substrate.

The plurality of plasma stabilizing plates may include a driving unit for moving at least one of the plurality of plasma stabilizing plates.

The openings are formed in each of the plurality of plasma stabilizing plates, and the driving unit moves the plasma stabilizing plate to adjust an overlapping size of the openings.

The openings may include a plurality of through holes formed radially adjacent to each other on the plane of the plasma stabilizing plate, and the adjacent through holes may have the same distance.

The opening portion may include a plurality of slits extending in the other direction and spaced apart at equal intervals.

One of the plurality of plasma stabilizing plates includes a single through-hole, and the opening of the remaining plasma stabilizing plate may include a plurality of through-holes.

A protrusion formed on the outer surface of the plasma stabilizing plate and protruding toward the substrate may be formed on one surface of the plasma stabilizing plate facing the film forming surface of the substrate.

An atomic layer deposition apparatus according to an embodiment of the present invention includes a chamber for forming a space in which a substrate is processed, a substrate support for supporting the substrate and making the substrate linearly movable, A linear source module disposed across the substrate and configured to emit a source material into the substrate; a linear plasma module disposed adjacent to the source module and configured to emit a reactive material to the substrate, And a plasma stabilizing plate disposed between the plasma generating space and the substrate, the plasma stabilizing plate including an opening portion penetrating at least a part of the region.

The plasma stabilizing plate may be formed such that open regions formed by the open portion are spaced apart from each other with respect to a moving direction of the substrate, and a non-open region may be formed between the open regions.

The plurality of plasma stabilizing plates may be stacked in a direction perpendicular to the moving direction, and the plasma module may include a driving unit for moving at least one of the plurality of plasma stabilizing plates in the moving direction.

The driving unit may adjust a communication size of the openings formed in each of the plurality of plasma stabilizing plates.

The opening may include a plurality of through holes.

Wherein the plurality of through holes are divided into a first group including through holes arranged to be spaced apart from each other in a direction crossing the moving direction in the plasma stabilizing plate and a first group including the through holes in the moving direction on the basis of the first group, And a second group including through holes positioned between the through holes included in the second group.

The open portion includes a plurality of slits, and each of the plurality of slits may form the open regions.

One of the openings includes a single through-hole, and the remaining openings of the openings may include a plurality of through-holes.

A protruding portion protruding and mounted to the film formation surface along the circumferential direction of the plasma stabilizing plate may be formed on one surface of the plasma stabilizing plate facing the film forming surface.

The substrate support may include a stage for seating the substrate thereon, and a stage driver for moving the stage in the movement direction so that the film formation surface passes through the section corresponding to the source module and the plasma module.

And a blocking unit disposed between the source module and the plasma module and partitioning a space of the source module and the plasma module.

An atomic layer deposition method according to an embodiment of the present invention includes the steps of placing a substrate on a stage, forming a first layer on the substrate with either a linear source module and a plasma module disposed across the substrate, And forming a second layer on the first layer with the other of the linear source module or the plasma module, wherein forming the first layer on the substrate and forming the second layer on the substrate In the step of using the plasma module, the plasma reaction gas may be supplied toward the substrate via the plasma stabilizing plate disposed between the plasma generating space and the substrate.

The step of forming the first layer on the substrate and the step of forming the second layer on the first layer may be performed while moving the substrate linearly.

The step of forming the first layer on the substrate and the step of forming the second layer may include the step of adjusting the size of the openings of the openings of the plurality of plasma stabilizing plates .

According to the plasma module and the atomic layer deposition apparatus using the same and the atomic layer deposition method using the plasma module according to the embodiment of the present invention, it is possible to easily control the supply amount of the ion energy and the radical generated from the plasma, The layer can be simply deposited in a single chamber and the quality of the film formed on the substrate can be increased.

That is, it is possible to linearly move the substrate at a position corresponding to the linear modules ejecting different raw materials to form different raw material layers on the substrate, thereby solving the problem that the apparatus is increased in order to be formed in mutually independent spaces .

A plasma stabilizing plate is disposed between the space in which the plasma is generated and the substrate so that the plasma reactive material generated through the opening of the plasma stabilizing plate is discharged to the substrate. Accordingly, the amount of ions and the amount of radicals generated from the plasma discharged toward the substrate through the openings can be controlled according to the size and formation shape of the openings.

By controlling the characteristics of the plasma by the plasma stabilizing plate, it is possible to suppress and prevent the occurrence of the problem that the plasma reacting substance spreads to the outside. Thus, the productivity and efficiency of the process can be increased.

1 is a view illustrating a plasma module according to an embodiment of the present invention.
Fig. 2 is a view for explaining an opening according to an embodiment and a modified example of the present invention.
FIG. 3 is a view for explaining a division region of the plasma stabilizing plate according to the formation of the open portion of the present invention. FIG.
4 and 5 are views showing a plasma stabilizing plate according to another embodiment of the present invention.
6 is a view showing a protrusion according to an embodiment of the present invention.
7 is a block perspective view showing an atomic layer deposition apparatus according to an embodiment of the present invention.
8 is a cross-sectional view of the atomic layer deposition apparatus of FIG.
9 is a flowchart illustrating an atomic layer deposition method using an atomic layer forming apparatus according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. In the description, the same components are denoted by the same reference numerals, and the drawings are partially exaggerated in size to accurately describe the embodiments of the present invention, and the same reference numerals denote the same elements in the drawings.

Hereinafter, a plasma module, an atomic layer deposition apparatus including the same, and an atomic layer deposition method using the same will be described with reference to FIGS. 1 to 9. 1 (a) is a perspective view showing a plasma module according to an embodiment of the present invention, and FIG. 1 (b) is a sectional view taken along the line A-A 'of FIG. 1 (a). Fig. 2 is a view for explaining an opening according to an embodiment and a modified example of the present invention. FIG. 3 is a view for explaining a division region of the plasma stabilizing plate according to the formation of the open portion of the present invention. FIG. 4 and 5 are views showing a plasma stabilizing plate according to another embodiment of the present invention. 6 is a view showing a protrusion according to an embodiment of the present invention. 7 is a block perspective view showing an atomic layer deposition apparatus according to an embodiment of the present invention. 8 is a cross-sectional view of the atomic layer deposition apparatus of FIG. 9 is a flowchart illustrating an atomic layer deposition method using an atomic layer deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a plasma module P M according to an embodiment of the present invention generates plasma, and is a module for easily controlling energy and amount of ions generated from the plasma. That is, the plasma module P 占 is disposed across the substrate W in the other direction Y intersecting the one direction X on the substrate W movable in the one direction X, A power supply unit 150 for applying power to generate a plasma P between the showerhead 110b and the substrate W and a power supply unit 150 for applying power between the showerhead 110b and the substrate W And includes a plasma stabilizing plate (200) including an opening (205a) formed through at least a part of the region. At this time, the plasma module P 占 is provided linearly across the substrate W, so that a plasma is generated in a linear region on the substrate W to process the substrate W.

The electrode unit 110 is provided with a showerhead body 110a having an open bottom and the showerhead 110b is fixed to a lower portion of the showerhead body 110a. A plurality of process gas diffusion holes 115 having a minute diameter are formed in the showerhead 110b. At this time, the process gas to be formed into plasma is supplied into the shower head body 110b through the process gas supply unit 130.

The power supply unit 150 applies electric power to the electrode unit 110 to plasmaize the generated gas supplied into the showerhead body 110b. That is, the plasma generating gas supplied through the showerhead 110b decomposes electrons having a negative charge and positively charged ions by a high frequency voltage to form neutral radicals.

Here, the plasma generating space S in which the plasma P is generated is a part of the space between the shower head body 110b and the substrate W, more particularly, as a part of the space between the shower head body 110a and the inner wall of the shower head body 110a, And may be a space formed by the lowermost end of the upper surface 110b. That is, as shown in FIG. 1, the plasma generating space S means a space formed by the side wall of the shower head body 110a at the lower portion of the showerhead 110b.

Further, the plasma discharge space E includes a region from the lowermost end to the lower end of the shower head body 110a. That is, the plasma discharge space E refers to a region outside the plasma generation space S and refers to a predetermined space from the end of the electrode unit 110 facing the substrate W to the substrate W.

The plasma stabilizing plate 200 is a plate structure having a predetermined thickness and is mounted on the shower head body 110b and the substrate W (that is, the end portion of the electrode portion 110 facing the substrate W) . More specifically, the plasma stabilizing plate 200 is disposed closer to the substrate W than the showerhead 110b, away from the showerhead 110b, between the plasma generating space S and the substrate W.

At this time, the plasma stabilizing plate 200 is provided with at least a portion of the plasma stabilizing plate 200 from the plasma generating space S toward the plasma discharging space E, and the plasma generating space S and the plasma discharging space E, An opening portion 205a is formed which cuts off a part of the opening portion and opens a part of the opening portion.

The open portion 205a provides a path through which the plasma reaction gas P containing the neutral radical formed in the plasma generating space S is discharged to the substrate W. [ The openings 205a and the non-open portions are alternately formed on the plasma stabilizing plate 200 with reference to the moving direction of the substrate W. The openings 205a are formed on the basis of the moving direction of the substrate W The open regions O are spaced apart from each other and a non-open region C is formed between the open regions O.

2 (a), the above-described opening 205a includes a plurality of through holes 205a-1, 205a-2, and 205a-3 formed to penetrate in the vertical direction, 200a. The plurality of through holes 205a-1, 205a-2, and 205a-3 are formed radially adjacent to each other on a plane formed by the plasma stabilizing plate 200a, and a plurality of through holes 205a-1 D2, and d3 between the first electrodes 205a-1 and 205a-2 and 205a-3 may be equal to each other (d1 = d2 = d3). This is because the plurality of through holes 205a-1, 205a-2, and 205a-3 are arranged in only one direction on the plane of the plasma stabilizing plate 200a, . More specifically, the plurality of through-holes 205a-1, 205a-2, and 205a-3 include through-holes spaced from each other in a direction Y that intersects the moving direction X of the substrate W The first group B1 and the through holes located between the through holes included in the first group B1 are spaced toward the moving direction X of the substrate W with respect to the first group B1, The first group B1 and the second group B2 are alternately formed toward the moving direction X of the substrate W. The first group B1 and the second group B2 are alternately formed. The plurality of through holes 205a-1, 205a-2, and 205a-3 may be formed by forming the open region O and the non-open region C in the plasma stabilizing plate precisely Can be done. Thus, when the plasma in the plasma generating space S is supplied to the plasma discharge space E, it can be suppressed and prevented from being biased to a certain region and discharged.

2 (b), the opening 205b includes a plurality of slits 205b-1, 205b-2, and 205b-3 formed to penetrate in the vertical direction, and the plasma stabilizing plate 200b As shown in FIG. At this time, the plurality of slits 205b-1, 205b-2, and 205b-3 extend in a plane formed by the plasma stabilizing plate 200b in a direction Y that intersects the moving direction X of the substrate W And are spaced apart from each other in the moving direction X of the substrate W. Thus, the plurality of slits 205b-1, 205b-2, and 205b-3 may be formed by alternately forming the open region O and the non-open region C in the plasma stabilizing plate 200b. At this time, the separation distances between the plurality of slits 205b-1, 205b-2, and 205b-3 may be the same (D1 = D2 = D3). This can be the same reason that the plurality of through holes 205a-1, 205a-2, and 205a-3 are formed with the same distance. When the openings 205b are formed to include a plurality of slits 205b-1, 205b-2, and 205b-3, a linearly formed device is used to scan the substrate W Can be easily discharged uniformly.

The open region and the non-open region formed in the plasma stabilizing plate 200 through the openings 205a and 205b in FIGS. 2 (a) and 2 (b) will now be described.

That is, Fig. 2 on the basis of (a) I 1 region in Fig. 2 (b), the movement of the substrate showing enlarged the I 2 region also will be described with reference to Figure 3, the plasma stabilizing plate 200 in the direction (X) of At least one or more open regions O1, O2 and O3 are formed apart from each other and non-open regions C1, C2 and C3 are formed between the open regions O1, O2 and O3. As described above, the open area O and the non-open area C can be formed by the openings 205a formed in the plasma stabilizing plate 200. [ At this time, the open area O and the non-open area C can be alternately formed based on the movement direction X of the substrate. The reason for this is that the plasma P is formed on the film formation surface of the substrate W So as to be uniformly supplied. That is, the open area O and the non-open area C are biased to any one of the sections of the plasma stabilizing plate 200, thereby suppressing the supply of the plasma P onto the substrate W And to prevent it.

4, protrusions 270 formed along the outer surface of the plasma stabilizing plate 200 and protruding toward the substrate W are formed on one surface of the plasma stabilizing plate 200 facing the substrate W . At this time, the protrusions 270 can easily prevent the plasma discharged into the plasma discharge space E between the plasma stabilizing plate 200 and the substrate W from diffusing and spreading outward.

The plasma stabilizing plate 200 has a structure for stabilizing the plasma P by controlling the energy of the ions generated from the plasma and the amount of the neutral radicals. W to prevent the substrate and the circuit elements formed on the substrate from being damaged due to arc generation, ion collision, ion implantation, and the like. The plasma stabilizing plate 200 can filter ions and electrons charged in the plasma so that only neutral radicals are allowed to flow onto the substrate W. As a result, It is possible to minimize the adverse effect on the periphery of the substrate W and prevent the periphery of the substrate and the substrate W from being damaged by the plasma P. [

5, when a plurality of plasma stabilizing plates 200 'are provided, a driving unit 250' for moving at least one of the plurality of plasma stabilizing plates 200 'may be additionally provided have. That is, in the embodiment of the present invention, a plurality of plasma stabilizing plates 200 'are disposed on the shower head body 110b, a first plasma stabilizing plate 210', and a first plasma stabilizing plate 210 ' And may include a second plasma stabilizing plate 230 'that is in contact with one side of the plate 210' and the opening 205a may include a first plasma stabilizing plate 210 'and a second plasma stabilizing plate 230' Respectively. At this time, since the plurality of plasma stabilizing plates 200 'and the driving unit 250' for moving the plasma stabilizing plates 200 'are provided, the openings 205a formed in the plurality of plasma stabilizing plates 200' The size of the discharged path can be adjusted.

5 (a), the openings 215 'and 235' formed in the first plasma stabilizing plate 210 'and the second plasma stabilizing plate 230' are connected to the first plasma stabilizing plate 210 'And the sides of the second plasma stabilizing plate 230' are co-located with each other, the mutually communicated width has a value of the first width R1 and is communicated. 5B, one of the first plasma stabilizing plate 210 'and the second plasma stabilizing plate 230' moves to form the first plasma stabilizing plate 210 'and the second plasma stabilizing plate 230' Openings 215 'and 235' formed in each of the first plasma stabilizing plate 210 'and the second plasma stabilizing plate 230' when the sides of the plate 230 'are not disposed at the same position, And the path of the second width R2 is formed.

As described above, the overlapping sizes of the open regions of the openings 215 'and 235' varying with mutual movement of the first plasma stabilizing plate 210 'and the second plasma stabilizing plate 230' (that is, The size of the discharge path of the plasma reaction gas P is adjusted according to the size of the discharge gas. Thus, the energy of the ions generated from the plasma and the amount of radicals can be controlled by the size of the discharge path. That is, since the single plasma stabilizing plate 200 has the opening 205a set to supply the ion energy and the amount of the radical of the desired plasma, it is possible to provide the ion energy and the amount of the radical of the single- have. However, by using a plurality of plasma stabilizing plates 200, the size of the discharge path of the plasma can be adjusted to a desired size, so that the amount of energy and radicals of ions generated from the plasma is smaller than that of the single plasma stabilizing plate 200 .

Meanwhile, the plasma stabilizing plate 200 'according to the modified embodiment of the present invention may not have openings corresponding to each other as described above. 6, any one of the openings formed in the first plasma stabilizing plate 210'-b and the second plasma stabilizing plate 230'-b may be formed as a single through-hole 215'-b ). The openings not including the single through-hole 215'-b may include a plurality of through-holes 235'-b.

At this time, a single through-hole 215'-b is formed through a predetermined region from the center on the plane of the plasma stabilizing plate to be formed, and further, through the plasma stabilizing plate 200 ' . The plurality of through holes 235'-b are formed in a single through hole 215 'at a position where the side surfaces of the first plasma stabilizing plate 210'-b and the second plasma stabilizing plate 230'-b are connected to each other. -b) may be partially blocked, and the remaining region except for the blocked region may be opened. This is because only the first plasma stabilizing plate 210'-b is positioned at the lower end of the shower head body 110a when the plasma is to be discharged through the single through-hole 215'-b, The second plasma stabilizing plate 230'-b is inserted into the first plasma stabilizing plate 210'-b to shut off a part of the open region formed by the single through-hole 215'-b .

Hereinafter, an atomic layer deposition apparatus 1 including the plasma module of the present invention will be described with reference to FIGS. 7 and 8. FIG.

An atomic layer deposition apparatus 1 according to an embodiment of the present invention includes a chamber (not shown) for forming a space in which a substrate W is processed, a chamber (not shown) for supporting the substrate W in the chamber, The substrate W is placed so as to traverse the substrate W in a direction crossing the moving direction of the substrate W and spaced apart from the film formation surface of the substrate W, And a linear plasma module PM that is spaced from the source module 30 in one direction X and emits a reactive material to the substrate W. The source module 30 includes a linear plasma module PM, The plasma module P M includes a plasma stabilizing plate 200 disposed between the space S in which the plasma is generated and the substrate W and including an opening 205 through which at least a portion of the space S is formed .

That is, the atomic layer deposition apparatus 1 of the present invention includes a source module 30 that forms a source material layer M1 on a substrate W, and a source module 30 that is disposed side by side with the source module 30, And a plasma module P · M forming the layer M2 and the source module 30 and the plasma module P · M are arranged in a space division manner in a single chamber. At least one of the source module 30 and the plasma module P 占 may pass over the first region of the substrate W and then the other may pass over the first region And the substrate W can be passed through in the same manner as the scanning method.

The substrate support 10 includes a stage 12 for providing a seating surface on which a substrate W is seated to support a substrate W in a chamber (not shown) And a stage driver 14 for allowing the entire area of the plasma module P M to pass through a position corresponding to an end portion of the source material and the reactant material of each of the plasma module P M. That is, the stage 12 provides a seating surface for supporting the substrate W, and the stage driver 14 reciprocates the stage 12 in one direction X. Thus, the substrate W on the stage 12 can be reciprocated in one direction. As described above, the stage 12 is moved back and forth while passing through the section corresponding to the source module 30 and the plasma module P 占 by the stage driver 14, so that the entire region of the substrate W M1 and the reactive material layer M2 may be formed to form the material layer M. [

The atomic layer deposition module is for forming a material layer M by spraying a source material and a reactive material on a substrate W. The atomic layer deposition module is disposed apart from the film formation surface of the substrate W, And a source module 30 and a plasma module P M for injecting a source material and a reactive material into the plasma display panel. At this time, the direction in which the source material and the reactant are injected may be not only injected from the upper part to the lower part, but also from the lower part to the upper part. The atomic layer deposition module further includes a blocking portion 50 and a source module 30 disposed between the source module 30 and the plasma module P 占 to block the source module 30 and the plasma module P 占30 and a blocking portion 50 and a purge portion 40 disposed between the plasma module P and M and the blocking portion 50. [

The source module 30 is linearly extended and disposed across the substrate W in a direction Y that intersects the direction of movement of the substrate W and forms a source material layer M1 on the substrate W . At this time, the source module 30 can inject the source material into the first region of the substrate W in the direction Y intersecting the moving direction due to the linear structural characteristic. The source module 30 includes a source material reservoir 35 for storing a source material and a source material injection nozzle 31 for receiving a source material from the source material reservoir 35 and injecting the source material into the substrate W . At this time, although not shown, the source module 30 is provided with a source material discharging nozzle 31 for sucking the remaining source material in order to suppress and prevent the source material remaining at the end of the source material spraying nozzle 31 from falling on the substrate W. [ (Not shown).

The plasma module P 占 is linearly extended and arranged across the substrate W in the direction Y that intersects the moving direction X of the substrate W and is provided with a reactive material layer M2. ≪ / RTI > A reactive gas reservoir 130 for storing a reactive gas of the plasma module P.multidot.M, an electrode unit 110 for supplying a reactive material onto the substrate W in a plasma form, And a power supply unit 150 for applying a current. The plasma module PM may include a reactant discharge unit (not shown) as in the case of the source module 30.

 As described above, the plasma stabilizing plates 200 and 200 'are provided between the region S where the plasma P is generated and the substrate W, and the plasma P So that the substrate W is not directly exposed to the plasma P at the time of formation. That is, the plasma P can be controlled to be discharged from the plasma generating space S to the substrate W through the openings 205a and 205b. In the plasma P formation, It is possible to prevent a problem that causes damage to circuit elements formed on the substrate and the substrate by ion implantation or the like. The plasma stabilizing plate 200 can filter ions and electrons charged in the plasma so that only neutral radicals are allowed to flow onto the substrate W. As a result, It is possible to minimize the adverse effect on the periphery of the substrate W and prevent the periphery of the substrate and the substrate W from being damaged by the plasma P. [

A plurality of plasma stabilizing plates 200 and 200 'are provided to control the size of the openings 205, 215', and 235 'formed in the plasma stabilizing plates 200 and 200' The plasma (P) reactant can be supplied to the substrate W by setting the desired amount of radicals by adjusting the size of the path through which the plasma P is discharged. Then, ions and radicals of the plasma can be collected and discharged without spreading outwardly. Accordingly, it is possible to suppress and prevent mutual vapor phase reaction from occurring due to diffusion of the reactant material toward the source module 30 for spraying the source material.

Meanwhile, the source material injected through the above-described source module 30 may include silicon (Si), and the reactive material supplied in a plasma form through the plasma module P 占 may contain oxygen, W) to form a material layer M. [0054]

The purge part 40 includes a first purge part 40a disposed between the source module 30 and the blocking part 50 and a second purge part 40b disposed between the plasma module P 占 and the blocking part 50. The purge part 40 includes: And a branch portion 40b. At this time, the first purge portion 40a and the second purge portion 40b are respectively disposed in the space between the substrate W and the atomic layer deposition module, (41a, 41b), and a pump (45) for applying a suction force to the exhaust nozzles (41a, 41b). Thus, the purge part 40 can absorb and remove the by-product between the substrate W and the atomic layer deposition module, thereby preventing the byproducts from falling on the substrate W and preventing the quality of the substrate W from deteriorating.

The blocking portion 50 is provided to block between the source module 30 and the plasma module P · M for spraying and forming materials different from each other and includes a space through which the source material is injected from the source module 30 And a space in which the reactant discharged from the plasma module P 占 이 remains (i.e., the plasma discharge space E). At this time, the blocking unit 50 injects the blocking gas toward the film formation surface of the substrate W between the source module 30 and the plasma module P · M, thereby forming the source module 30 and the plasma module P · M, So that the space disposed immediately under the lower portion of the housing can be partitioned. The blocking unit 50 is provided to form a magnetic field between the source module 30 and the plasma module P · M so that the ions of the plasma generated in the plasma module P · M are directed toward the source module 30 So that it can be confined in the plasma discharge space E without being diffused.

Hereinafter, a method of depositing an atomic layer using a plasma module and a film forming apparatus including the same according to an embodiment of the present invention will be described with reference to FIG. FIG. 9 is a flowchart sequentially illustrating an atomic layer deposition method using a film forming apparatus according to an embodiment of the present invention.

A method of atomic layer deposition according to an embodiment of the present invention includes the steps of placing a substrate W on a stage 12 and aligning a linear source module 30 and a plasma module P / M), forming a second layer on the first layer with the other of the plasma modules (P M), and forming a first layer on the first layer And reciprocating the stage 12 in a direction intersecting the stage 12. At this time, in the step of forming the first layer on the substrate W and the step of forming the second layer, the plasma module P · M is used. In this step, between the plasma generating space S and the substrate W The plasma reaction gas P is supplied toward the substrate W via the disposed plasma stabilizing plates 200 and 200 '.

Hereinafter, a source material layer M1 formed of a source module 30 as a first layer formed on a substrate W, a reactive material layer M2 formed of a plasma module P 占 M as a second layer ). The atomic layer deposition method of the present invention will be described on the basis of forming a barrier layer on an organic electronic device. However, the first layer and the second layer may be interchanged, and application of the atomic layer deposition method of the present invention is not limited to the barrier layer formation method for an organic electronic device.

First, in order to form an atomic layer on the substrate W, the substrate W is loaded into the chamber and placed on the stage 12 (S100). At this time, the substrate W may be an organic electronic device having an organic light emitting layer. One surface of the substrate W that is in contact with the stage 12 may be a surface facing the surface on which the organic layer is stacked. That is, since the source material and the reactive material are sprayed from the upper part to form the material layer, the part where the organic light emitting layer of the organic electronic device is formed on the stage 12 must be arranged to face the atomic layer deposition module.

When the substrate W is placed on the stage 12, a source material layer M1 and a reactive material layer M2 are formed on the substrate W using an atomic layer deposition (ALD) (S200, S300) to form a material layer (M4) (S400).

That is, the source material 30 is used to inject the source material from the source material reservoir 35 storing the source precursor to the substrate W through the source material injection nozzle 31 (S200). At this time, the source material may include an organic silicon compound. Such an organosilicon compound is an organic compound having a silicon-carbon bond and may include bisdiethylamino silane (BDEAS), diisoprophylamino silane (DIPAS), and TSA. As such, the injected source material is physically adsorbed onto the substrate W to form a layer of source material. As such, the injected source material is physically adsorbed on the substrate W to form the source material layer M1. After the source material is sprayed, the source material that is not physically adsorbed on the substrate W is sucked and removed by the first exhaust portion 40a.

When the source material is sprayed onto the substrate W to form the source material layer M1, the plasma module P · M is used to discharge the reactant precursor from the reactant reservoir through the electrode unit 150 So that the reaction precursor is plasmaized. The plasma reaction material is injected onto the substrate W and physically adsorbed to form a reactive material layer M2 (S300). At this time, the reactant includes oxygen gas, and other nitrous oxide, oxygen, nitrogen monoxide and ozone may be used.

On the other hand, the source material and the reactive material are not limited to the materials described above, and various materials applicable in the field of the present invention can be selected and used by those skilled in the art.

That is, since the source material layer M1 is formed and the reactive material layer M2 is formed, since the substrate W moves linearly by the movement of the stage 12 while the source material is being injected, The first region in which the source material layer M1 is formed is moved by the lower portion of the plasma module P 占 by movement. Thus, the reactive material layer (M2) may be formed on the first region.

As described above, the source module 30 and the plasma module P 占 supply the source material necessary for the film formation to the substrate W alternately so that one atomic layer is adsorbed on the substrate W, And the reactive material layer M2 can be formed.

The step S300 of spraying the reactive material M2 onto the substrate W is divided into sub-steps: supplying a reactive gas and generating a plasma (S310); and supplying a plasma reaction material to the plasma stabilizing plate 200, and 200 'to the substrate W (S320). That is, the plasma reaction gas (P) is discharged to the substrate to form a reactive material layer. The reactant gas passes through the electrode unit 110 and is formed into plasma, and the showerhead 110b, Can be suppressed and prevented from being discharged to the substrate W as soon as the plasma P is generated by passing through the plasma stabilizing plates 200 and 200 'disposed in the space between the substrate W and the substrate W. Thus, the plasma can be stably supplied onto the substrate W, so that a uniform reactive material layer can be formed on the substrate W. Meanwhile, as described above, a plurality of plasma stabilizing plates 200 and 200 'are provided so that the desired ion energy and the amount of radical can be controlled by controlling the size of the path through the plasma according to the degree of overlap of the openings .

The formation of the material layer M including the source material layer M1 and the reactive material layer M2 on the substrate W is completed through formation of the reactive material layer M2 on the substrate W (S400), a process of purging the material remaining on the substrate W is performed (S500). That is, the source material injected onto the substrate W and the substances not adsorbed to the substrate W among the reactants are discharged to the outside of the chamber or into the space separated from the space between the atomic layer deposition module and the substrate W, It is possible to prevent the problem that the source material or the reacting material that is not adsorbed on the wafer W and that remains is deteriorated in quality of the substrate W. [

The above process is performed and a step of determining whether a material layer M of a desired number of layers is formed on the substrate W is performed. That is, a source material layer formed by using the source module 30 and a reactive material layer formed by using the plasma module P M are formed on the substrate W, Layer and a three-layer material layer).

At this time, it is possible for the operator to determine whether the material layer is formed on the entire surface of the substrate W by the desired number of stacked layers, or it may be determined by the height difference of the substrate W. In one example, the height of the substrate W is measured in the lateral direction of the substrate W before the source material M1 or the reactive material M2 is sprayed onto the substrate W. This is the initial height of the substrate W, which means the thickness of the substrate W itself. Then, the height of the substrate W in the lateral direction is measured in real time as the process proceeds. At this time, if the measured thickness of the substrate W differs from the initial height of the substrate W, the material layer M is formed on the substrate W. At this time, when the thicknesses of the material layers M stacked in the desired number are calculated, it is judged that the material layer M stacked in the desired number of areas is not formed in the area showing the thickness value different from the calculated thickness value. Here, as means for confirming the side height value of the substrate W, an image pickup device (not shown) is disposed in the chamber so as to face the side of the substrate W, and a determination unit (not shown) connected to the image pickup device The height can be measured.

If it is determined that the formation of the material layer M is not completed by the desired number of stacked layers on the substrate W, the stage 12 is moved (S700). That is, due to the characteristics of the atomic layer deposition module of the present invention, since the source material layer is formed with the source module 30 by the scanning method and the reactive material layer is formed with the plasma module P.multidot.M, 12 so that the entire surface of the substrate W can pass directly under the source module 30 and the plasma module P M. Thus, the material injection step (S200, S400) can be repeatedly performed while the stage 12 is moving.

Thereafter, when it is determined that the material layer (M) is formed, the film forming process is completed.

Meanwhile, in the process of forming the material layer, the source material layer is deposited using the source module 30, the source material layer is formed, and the reactive material layer is formed using the plasma module P · M . However, the sequence of step S200 of spraying the source material M1 onto the substrate W and step S400 of spraying the reactive material M2 onto the substrate W are adjusted to form the reactive material M2, (S400) may be performed first and the step S200 of spraying the source material M1 may be performed later.

As such, in the present invention, a layer of material including a source material and a reactive material can be simply deposited in a single chamber using a linear atomic layer deposition module arranged in one direction across the substrate. The plasma can be stably injected by spraying the reactant using a plasma module in which a path through which plasma ions and radicals are discharged can be controlled. That is, the degree of overlapping of the openings formed in the plurality of throttle plates is adjusted to control the size of the path through which the plasma is discharged. Thus, the discharge of the plasma can be stably performed, so that the plasma can be suppressed and prevented from diffusing to the region under the source module. In addition, even if an impedance difference is generated on the surface of the substrate, the plasma can be discharged onto the substrate correspondingly, so that a uniform film can be formed on the substrate.

As used in the above description, the term " on " means not only a direct contact but also a case of being opposed to the upper or lower surface, It is also possible to position them facing each other, and they are used to mean facing away from each other or coming into direct contact with the upper or lower surface. Thus, " on substrate " may be the surface (upper surface or lower surface) of the substrate, or it may be the surface of the film deposited on the surface of the substrate.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limited to the embodiments set forth herein. Those skilled in the art will appreciate that various modifications and equivalent embodiments may be possible. Accordingly, the technical scope of the present invention should be defined by the following claims.

M: material layer P: plasma
M1: source material M2: reactive material
P 占 M: Plasma module 1: Atom layer formation device
10: substrate support 12: stage
14: stage driver 30: source module
40: purge part 50:
200, 200 ': plasma stabilizing plates 205, 215', 235 ': openings

Claims (22)

An electrode section disposed across the substrate in the other direction crossing the one direction on a substrate movable in one direction, the electrode section including a showerhead;
A power supply for applying power to generate plasma between the showerhead and the substrate; And
And a plasma stabilizing plate disposed between the showerhead and the substrate, the plasma stabilizing plate including an opening that is formed through at least a part of the region. The method according to claim 1,
Wherein the plasma stabilizing plate is formed such that the open portion and the non-open portion are alternately formed based on a moving direction of the substrate. The method according to claim 1 or 2,
And a plurality of plasma stabilizing plates, and a driving unit for moving at least one of the plurality of plasma stabilizing plates. The method of claim 3,
Wherein each of the plurality of plasma stabilizing plates has the opening portion,
Wherein the driving unit moves the plasma stabilizing plate to adjust an overlapping size of the openings. The method according to claim 1,
Wherein the openings comprise a plurality of through holes formed radially adjacent to each other on a plane of the plasma stabilizing plate,
And the adjacent through holes have the same distance. The method according to claim 1,
Wherein the openings extend in the other direction and include a plurality of slits spaced apart at equal intervals. The method of claim 4,
Wherein one of the plurality of plasma stabilizing plates includes a single through-hole,
Wherein the openings of the remaining plasma stabilizing plates of the plurality of plasma stabilizing plates include a plurality of through holes. The method according to claim 1,
On one surface of the plasma stabilizing plate facing the substrate,
And a protrusion formed along an outer periphery of the plasma stabilizing plate and protruding toward the substrate. A chamber defining a space in which the substrate is processed;
A substrate support for supporting the substrate and allowing the substrate to move linearly;
A linear source module disposed across the substrate in a direction crossing the direction of movement of the substrate, the linear source module injecting a source material into the substrate;
And a linear plasma module disposed in parallel with the source module and injecting a reactive material into the substrate,
Wherein the plasma module comprises a plasma stabilizing plate disposed between the plasma generating space and the substrate, the plasma stabilizing plate comprising an opening portion formed through at least a part of the region. The method of claim 9,
Wherein the plasma stabilizing plate is formed such that open regions formed by the open portion are spaced apart from each other with respect to a moving direction of the substrate, and a non-open region is formed between the open regions. The method of claim 10,
A plurality of plasma stabilizing plates are stacked in a direction perpendicular to the moving direction,
And the plasma module includes a driving unit for moving at least one of the plurality of plasma stabilizing plates in the moving direction. The method of claim 11,
Wherein the driving unit adjusts a communication size of the openings formed in each of the plurality of plasma stabilizing plates. The method of claim 12,
Wherein the opening portion includes a plurality of through holes. 14. The method of claim 13,
Wherein the plurality of through-
A first group including through holes arranged to be spaced apart from each other in a direction crossing the moving direction in the plasma stabilizing plate; And
And a second group of spaced-apart through-holes spaced apart from the first group in the moving direction and located between the through-holes included in the first group. The method of claim 12,
Wherein the openings comprise a plurality of slits, each of the plurality of slits forming the open regions. The method of claim 12,
Wherein one of the openings includes a single through-hole,
And the remaining openings of the openings include a plurality of through-holes. The method according to claim 9 or 11,
Wherein protrusions protruding toward the film formation surface are formed along the circumferential direction of the plasma stabilizing plate on one surface of the plasma stabilizing plate facing the film formation surface of the substrate. The method according to claim 9 or 11,
The substrate-
A stage for placing the substrate on an upper surface thereof;
And a stage driver for moving the stage in the movement direction so that the film formation surface passes through the section corresponding to the source module and the plasma module. The method according to claim 9 or 11,
And a blocking portion disposed between the source module and the plasma module to partition a space of the source module and the plasma module. Placing the substrate on a stage;
Forming a first layer on the substrate with either a linear source module and a plasma module disposed across the substrate;
Forming a second layer on the first layer with the remainder of the linear source module or the plasma module,
Wherein, in the step of forming the first layer on the substrate and the step of forming the second layer, the plasma reaction gas is supplied through the plasma stabilizing plate disposed between the plasma generating space and the substrate, Is supplied toward the substrate. The method of claim 20,
Wherein forming the first layer on the substrate and forming the second layer on the first layer are performed by moving the substrate linearly. 23. The method of claim 21,
Wherein the step of forming the first layer on the substrate and the step of forming the second layer use the plasma module,
And adjusting the communication size of the openings of the plurality of plasma stabilizing plates.
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