KR20240032233A - Atmoic layer depositing apparatus - Google Patents

Abstract

The present invention relates to atomic layer deposition apparatus.
An atomic layer deposition apparatus according to one aspect of an embodiment of the present invention includes a gas supply assembly that supplies a source gas, a reaction gas, and a purge gas; and a substrate transfer module disposed below the gas supply assembly, moving linearly and seating a substrate on the upper side, wherein the gas supply assembly includes a gas supply assembly body, and is disposed on the gas supply assembly body, A main unit including a source gas supply module for supplying the source gas to the bottom of the gas supply assembly, a reaction gas supply module for supplying the reaction gas, an internal purge gas supply module for supplying the purge gas, and a main pumping module for providing negative pressure. Based on the direction in which the gas supply assembly and the substrate transfer module are moved, each is disposed on the front side and the rear side of the main gas supply assembly, and a first exit purge gas supply module and a second exit purge gas supply module that discharge the purge gas. Includes purge gas supply module.

Description

Atomic layer deposition device {ATMOIC LAYER DEPOSITING APPARATUS}

The present invention relates to an atomic layer deposition apparatus, and more specifically to an atomic layer deposition apparatus for depositing an atomic layer on a substrate.

Generally, methods for depositing a thin film of a predetermined thickness on a substrate such as a semiconductor substrate or glass include physical vapor deposition (PVD) using physical collisions such as sputtering, and chemical methods using chemical reactions. There are chemical vapor deposition (CVD) methods, etc.

Recently, as the design rules of semiconductor devices have rapidly become finer, thin films with fine patterns are required, and the level of the area where the thin films are formed has also become very large, making it possible to form fine patterns with an atomic layer thickness very uniformly. In addition, the use of atomic layer deposition (ALD), which has excellent step coverage, is increasing.

Korean Patent Publication No. 10-2016-0131442 (2016.11.16)

The atomic layer deposition apparatus according to an embodiment of the present invention seeks to provide an atomic layer deposition apparatus capable of depositing a high-quality atomic layer on a substrate.

An atomic layer deposition apparatus according to an aspect of an embodiment of the present invention includes a gas supply assembly supplying a source gas, a reaction gas, and a purge gas; and a substrate transfer module disposed below the gas supply assembly, moving linearly and seating a substrate on the upper side, wherein the gas supply assembly includes a gas supply assembly body, and is disposed on the gas supply assembly body, A main unit including a source gas supply module for supplying the source gas to the bottom of the gas supply assembly, a reaction gas supply module for supplying the reaction gas, an internal purge gas supply module for supplying the purge gas, and a main pumping module for providing negative pressure. Based on the direction in which the gas supply assembly and the substrate transfer module are moved, each is disposed on the front side and the rear side of the main gas supply assembly, and a first exit purge gas supply module and a second exit purge gas supply module that discharge the purge gas. Includes purge gas supply module.

In addition, the substrate transfer module can selectively move forward or backward along a first axis, is spaced apart from each other along a second axis that intersects the first axis, and is disposed on one side and the other side of the gas supply assembly, wherein the substrate It is disposed in a direction parallel to the moving direction of the transfer module and includes a first side purge gas supply module and a second side purge gas supply module that discharges the purge gas.

In addition, the gas supply assembly includes a first inlet pumping module and a second inlet pumping module disposed on the front side and the rear side of the gas supply assembly, respectively, and the first inlet pumping module and the second inlet pumping module. The incoming and outgoing pumping module extension length (L _{in/out, P} ) with respect to the second axis of the pumping module is the incoming and outgoing purge gas with respect to the second axis of the first incoming and outgoing purge gas supply module and the second incoming and outgoing purge gas supply module. It may be greater than or equal to the supply module extension length (L _{in/out, G} ) and may be less than or equal to the width (W ₁ ) of the gas supply assembly body in the second axis direction.

In addition, a first side pumping module and a second side are spaced apart from each other along the second axis and are disposed on one side and the other side of the gas supply assembly, are disposed in a direction parallel to the moving direction of the substrate transfer module, and provide the negative pressure. It includes a pumping module, and the side pumping module extension length (L _{Side, P} ) of the first side pumping module and the second side pumping module with respect to the second axis is the first side purge gas supply module and the second side. Greater than or equal to the side purge gas supply module extension length (L _{Side, G} ) with respect to the second axis of the purge gas supply module, and less than or equal to the width (L ₁ ) of the gas supply assembly body in the first axis direction. It can be the same.

The internal purge gas supply module is disposed between the reaction gas supply module and the source gas supply module, and the main pumping module is configured to supply the source gas supply module, the reaction gas supply module, and the internal purge gas supply module. Each of the main pumping modules is disposed between the reaction gas supply module adjacent to the first entrance purge gas supply module and the first entrance purge gas supply module among the plurality of reaction gas supply modules. In addition, the other main pumping module may be disposed between the reaction gas supply module adjacent to the second input purge gas supply module and the second input purge gas supply module among the plurality of reaction gas supply modules.

In addition, one of the reaction gas supply modules is disposed between the internal purge gas supply module adjacent to the first outlet purge gas supply module and the first outlet purge gas supply module among the plurality of internal purge gas supply modules. The other reaction gas supply module is disposed between the internal purge gas supply module adjacent to the second input purge gas supply module and the second input purge gas supply module among the plurality of internal purge gas supply modules. It can be.

In addition, the main pumping module, the internal purge gas supply module, and the reaction gas supply module are disposed between the first source gas supply module of one of the source gas supply modules and the second source gas supply module of the other source gas supply module. , It can be arranged in the following order: 'main pumping module - internal purge gas supply module - main pumping module - reaction gas supply module - main pumping module - internal purge gas supply module - main pumping module'.

In addition, the source gas includes a first source gas and a second source gas that is a material different from the first source gas, and the first source gas supply module supplies the first source gas and the second source gas. The gas supply module may supply the second source gas.

In addition, the first and second entry purge gas supply modules supply the purge gas at a first supply pressure, and the first and second side purge gas supply modules supply the purge gas at a second supply pressure. And, the internal purge gas supply module supplies the purge gas at a third supply pressure, and the first supply pressure is greater than or equal to the second supply pressure and the third supply pressure, and the third supply pressure is is greater than or equal to the second supply pressure, the second supply pressure and the third supply pressure are constant regardless of the movement of the substrate, and the first supply pressure may vary depending on the position of the substrate.

In addition, in a state where at least a portion of the substrate is located below any one of the first and second input purge gas supply modules, the one input purge gas supply module supplies the purge gas to the first input and output purge gas. Supply pressure (P _in/out,1 ), and in a state where the substrate is not located below the first and second input and output purge gas supply modules, the first and second input and output purge gas supply modules are The purge gas is supplied at the second input purge gas supply pressure (P _in/out,2 ), and the first input purge gas supply pressure (P _in/out,1 ) is the second input purge gas supply pressure (P _in) . _/out,2 ) can be formed larger than that.

In addition, the reaction gas supply module end width (W _R ) of the reaction gas supply module with respect to the first axis is the internal purge gas supply module end width (W _P ) of the internal purge gas supply module with respect to the first axis. greater than that, the internal purge gas supply module end width (W _P ) is greater than the source gas supply module end width (W _S ) of the source gas supply module with respect to the first axis, and the substrate transfer module and the reaction gas The distance (A) between the supply modules and the distance (B) between the substrate transfer module and the internal purge gas supply module may be smaller than the distance (C) between the substrate transfer module and the source gas supply module.

In addition, a first protrusion protruding from the outer surface of the reaction gas supply module body is formed at the lower end of the reaction gas supply module, the internal purge gas supply module, the first and second inlet purge gas supply modules, and the Second protrusions are formed at the lower ends of the first and second side purge gas supply modules, and the lower ends of the source gas supply modules gradually decrease in width as they go downward. , the lower edge of the source gas supply module may be formed with a rounded curved portion.

Additionally, a source gas supply line through which the source gas flows and is supplied to the source gas supply module; a purge gas supply line through which the purge gas flows and supplies it to the internal purge gas supply module, the first and second exit purge gas supply modules, and the first and second side purge gas supply modules; A purge bypass line on one side connected to the source gas supply line and on the other side connected to the purge gas supply line; and a purge gas valve unit disposed on the purge bypass line; And, a source gas valve unit disposed on the source gas supply line, wherein the source gas valve unit is connected to a point where the source gas supply line and the purge bypass line are connected and a source gas reservoir where the source gas is stored. It can be placed in between.

In addition, it further includes a valve unit control unit for controlling the purge gas valve unit and the source gas valve unit, wherein the valve unit control unit determines the position of the substrate transfer module with respect to the first axis and the substrate transfer module. The operation of the purge gas valve unit and the source gas valve unit is controlled based on at least one of the position where the substrate is placed and the transfer speed of the substrate transfer module, so that only one gas is selectively directed to the source gas supply module. can be supplied.

In addition, the gas supply assembly includes an etching gas reservoir that supplies etching gas; an etching gas supply line through which the etching gas from the etching gas reservoir flows and supplies it to the source gas supply line; And, the source gas supply line and the etching gas supply line are connected to each other, and an etching gas valve unit disposed on the etching gas supply line, The valve unit control unit controls the operations of the etching gas valve unit and the source gas valve unit to selectively supply only one gas to the source gas supply module.

Additionally, a reaction gas supply line through which the reaction gas flows and is supplied to the reaction gas supply module; It further includes a plasma oscillator for ionizing the reaction gas, and the plasma oscillator may be connected to any one of (1) the reaction gas supply line and (2) the reaction gas supply module.

According to an embodiment of the present invention, an atomic layer deposition apparatus capable of depositing a high-quality atomic layer on a substrate can be provided.

1 is a diagram showing an atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram showing a gas supply assembly of the atomic layer deposition apparatus of FIG. 1.
FIG. 3 is a view showing the bottom of the gas supply assembly of FIG. 2.
FIG. 4 is a diagram showing a cross section of the gas supply assembly of FIG. 2.
Figure 5 is an enlarged view of portion M of the gas supply assembly of Figure 4.
Figure 6 is a diagram showing an atomic layer deposition apparatus according to another embodiment of the present invention.

The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms, but the present embodiments only serve to ensure that the disclosure of the present invention is complete and are within the scope of common knowledge in the technical field to which the present invention pertains. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

Although first, second, etc. are used to describe various components, these components are, of course, not limited by these terms. These terms are merely used to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may also be a second component within the technical spirit of the present invention.

Like reference numerals refer to like elements throughout the specification.

Each feature of the various embodiments of the present invention can be partially or fully combined or combined with each other, and as can be fully understood by those skilled in the art, various technical interconnections and operations are possible, and each embodiment may be implemented independently of each other. It may be possible to conduct them together due to a related relationship.

Meanwhile, potential effects that can be expected from technical features of the present invention that are not specifically mentioned in the specification of the present invention are treated as if described in the specification, and this embodiment is intended for those with average knowledge in the art. Since it is provided to more completely explain the present invention, the content shown in the drawings may be exaggerated compared to the actual implementation of the invention, and the detailed description of the configuration that is judged to unnecessarily obscure the gist of the present invention is not provided. Omit or describe briefly.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a diagram showing the configuration of an atomic layer deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, in the atomic layer deposition apparatus 1 according to an embodiment of the present invention, the substrate 220 on which the atomic layer is deposited has a gas supply assembly 100 through which source gas, reaction gas, and purge gas are supplied. It moves forward or backward along the first axis in the placed chamber region 180, and the atomic layer is deposited. The substrate 220 may be, for example, a semiconductor substrate or a glass substrate, and the atomic layer may be deposited on one surface of the substrate 220.

For example, when the first axis is the (see Figure 2).

The substrate 220 moves in either the front or rear direction of the first axis, and an atomic layer is deposited on the upper surface of the substrate 220. At this time, the substrate 220 may be moved to the rear and an atomic layer deposition process may be performed, and then, in a state where it is completely separated from the chamber region 180, it may be moved to the front again and an atomic layer deposition process may be performed.

In this embodiment, the reaction gas supply module 120 is disposed on the front and rear sides of the gas supply assembly 100 based on the direction in which the substrate transfer module 200 moves, so that during this reciprocating movement, the source gas and the reaction gas By ensuring that the reaction occurs smoothly, atomic layer deposition efficiency can be increased.

According to an embodiment of the present invention, the selective supply of the source gas and the purge gas is controlled depending on the insertion position of the substrate 220, thereby preventing the deterioration of the deposition quality of the atomic layer due to unintentional diffusion of the source gas. It can be suppressed. Additionally, by providing various types of source gas, an atomic layer deposition apparatus capable of performing multi-component atomic layer deposition, such as IGZO (Indium Gallium Zinc Oxide), can be provided.

Additionally, the atomic layer deposition apparatus 1 according to an embodiment of the present invention may be operated at atmospheric pressure with the chamber region 180 filled with an inert gas. However, the configuration in which the operating pressure of the chamber region 180 of the atomic layer deposition apparatus 1 is normal pressure is only an exemplary configuration, and the configuration in which the chamber region 180 is in a vacuum state or low pressure state is also included in the spirit of the present invention. You can.

Hereinafter, the configuration of the atomic layer deposition apparatus 1 according to an embodiment of the present invention will be described in more detail.

The atomic layer deposition apparatus 1 according to an embodiment of the present invention includes a gas supply assembly 100 that supplies source gas, reaction gas, and purge gas, and is disposed below the gas supply assembly 100 and moves linearly. It includes a substrate transfer module 200 on which the substrate 220 is mounted.

In more detail, the gas supply assembly 100 includes a gas supply assembly body 101 and a source gas supply module 140 disposed on the gas supply assembly body 101 and supplying source gas to the bottom of the gas supply assembly 100. It includes a main gas supply assembly 110 including a reaction gas supply module 120 that supplies a reaction gas, an internal purge gas supply module 130 that supplies a purge gas, and a main pumping module 150 that provides negative pressure. , a first entrance purge gas supply module 310, a second entrance purge gas supply module 320, a first side purge gas supply module 330, and a first entrance purge gas supply module 330 that supply purge gas to the outside of the main gas supply assembly 110. 2 Includes a side purge gas supply module (340).

In addition, the source gas supply line 141 through which the source gas flows and supplies to the source gas supply module 140, the purge gas flows through the internal purge gas supply module 130, and the first and second entry and exit purge gas supply modules ( 310, 320), a purge gas supply line 131 that supplies to the first and second side purge gas supply modules 330, 340, one side is connected to the source gas supply line 141, and the other side is connected to the source gas supply line 141. A purge bypass line 134 connected to the purge gas supply line 131, a purge gas valve unit 132 disposed on the purge bypass line 134, and disposed on the source gas supply line 141. It includes a source gas valve unit 142, wherein the source gas supply line 141 and the purge bypass line 134 are connected to the source gas where the source gas is stored. It is placed between storage units 144.

The atomic layer deposition apparatus 1 according to this embodiment further includes a valve unit control unit 190.

The valve unit control unit 190 is configured to control at least one of the position with respect to the first axis of the substrate transfer module 200, the position at which the substrate 220 is placed in the substrate transfer module 200, and the transfer speed of the substrate transfer module 200. The operations of the purge gas valve unit 132, source gas valve unit 142, and etching gas valve unit 162 are controlled based on one.

In addition, the atomic layer deposition apparatus 1 includes an etching gas reservoir 160 that supplies etching gas, an etching gas supply line 161 through which the etching gas of the etching gas reservoir 160 flows, and an etching gas supply line 161. It further includes an etching gas valve unit 162 disposed on the top.

In addition, the etching gas supply line 161 is connected to the source gas supply line 141, and the valve unit control unit 190 controls the operations of the etching gas valve unit 162 and the source gas valve unit 142, Optionally, only one gas is supplied to the source gas supply module 140.

At this time, when the substrate 220 is outside the deposition area 170, the valve unit control unit 190 closes the source gas valve unit 142 and the purge gas valve unit 132 to close the source gas supply module 140. By blocking the flow of the source gas and purge gas in the furnace and opening the etching gas valve unit 162, the etching gas flows to the source gas supply module 140 and supplies the source gas to some areas of the source gas supply line 141. Residual source gas in the module 140 and deposition area can be removed.

Also, when at least a portion of the substrate 220 enters the deposition area 170, the etching gas valve unit 162 is always closed, and at least a portion of the substrate 220 is supplied with one of the first source gases. When located below the module 140, the source gas valve unit 142 connected to the first source gas supply module 140 is opened, and the purge gas valve unit 132 connected to the first source gas supply module 140 is opened. ) is closed to supply the source gas to the first source gas supply module 140.

At this time, the source gas valve unit 142 connected to the other second source gas supply module 140 where at least a portion of the substrate 220 is not located below is closed, and the second source gas supply module 140 ) is opened to supply purge gas to the second source gas supply module 140.

According to the proposed embodiment, the source gas supply modules 140 discharge source gas when the substrate 220 is located below the corresponding source gas supply module 140, and the substrate 220 supplies the source gas. If it is not located below the supply module 140, the purge gas can be discharged to improve the space division effect and optimize the amount of source gas usage.

In addition, the source gas includes a first source gas and a second source gas that is a material different from the first source gas, and the one source gas supply module 140 supplies the first source gas, The other source gas supply module 140 may supply a second source gas.

That is, there is an advantage in that a multi-component atomic layer can be formed by supplying source gases containing different materials for one movement of the substrate 220.

The atomic layer deposition apparatus 1 according to this embodiment further includes a plasma oscillator 500 for ionizing the reaction gas.

The plasma oscillator 500 is connected to the reaction gas supply line 121 and provides a plasma voltage to ionize the reaction gas supplied from the reaction gas storage 122, thereby making the reaction between the source gas and the reaction gas more active. You can let it go.

Meanwhile, the plasma oscillator 500 can provide a voltage in the form of a pulse, and can be connected between a branch point in the reaction gas supply line 121 and the reaction gas reservoir 122.

Hereinafter, a configuration for suppressing gas leakage to the outside of the deposition region 170 according to an embodiment of the present invention will be described in more detail.

FIG. 2 is a diagram showing a gas supply assembly according to an embodiment of the present invention, FIG. 3 is a diagram showing a lower surface of the gas supply assembly of FIG. 2, and FIG. 4 is a diagram showing a cross section of the gas supply assembly of FIG. 2.

2 to 4, the gas supply assembly 100 is disposed on the front and rear sides of the main gas supply assembly 110, respectively, based on the first axis direction in which the substrate transfer module 200 moves. , the first entrance purge gas supply module 310 and the second entrance purge gas supply module 320, which discharge purge gas, are spaced apart from each other along a second axis that intersects the first axis, and are disposed on one side of the gas supply assembly 100. and a first side purge gas supply module 330 and a second side purge gas supply module 340 disposed on the other side, arranged in a direction parallel to the moving direction of the substrate transfer module 200, and discharging purge gas. do.

In addition, the first entrance and exit pumping module 410 and the second entrance pumping module 420, respectively disposed on the front side and the rear side of the gas supply assembly 100, are spaced apart from each other along the second axis and the gas supply assembly ( 100) is disposed on one side and the other side, is disposed in a direction parallel to the moving direction of the substrate transfer module, and includes a first side pumping module 430 and a second side pumping module 440 that provide the negative pressure. do.

At this time, the outgoing pumping module extension length (Lin/out, P) with respect to the second axis of the first incoming and outgoing pumping module 410 and the second incoming pumping module 420 is the first incoming and outgoing purge gas supply module 310 and the second inlet pumping module 420. 2 is greater than or equal to the incoming and outgoing purge gas supply module extension length (Lin/out, G) with respect to the second axis of the incoming and outgoing purge gas supply module 320, and the width in the second axis direction of the gas supply assembly body 101 ( Less than or equal to W1). In addition, the side pumping module extension length (LSide,P) of the first side pumping module 430 and the second side pumping module 440 with respect to the second axis is equal to the length of the first side purge gas supply module 330 and the second side. Greater than or equal to the side purge gas supply module extension length (LSide, G) with respect to the second axis of the purge gas supply module 340, and less than the width (L1) of the gas supply assembly body in the first axis direction. It's the same.

And, discharge of purge gas from the first exit purge gas supply module 310, the second exit purge gas supply module 320, the first side purge gas supply module 330, and the second side purge gas supply module 340. Through this, the deposition area 170 formed below the gas supply assembly 100 is distinguished from the remaining chamber area 180, and the first entrance and exit pumping module 410, the second entrance pumping module 420, and the second entrance pumping module 410 are separated from the remaining chamber area 180. The first side pumping module 430 and the second side pumping module 440 are located at the outermost part of the gas supply assembly 100 and provide negative pressure to separate the deposition area 170 from the remaining chamber area 180. .

According to an embodiment of the present invention, the internal purge gas supply module 130 of the main gas supply assembly 110 is disposed between the reaction gas supply module 121 and the source gas supply module 140. And, the main pumping module 150 is disposed between the source gas supply module 140, the reaction gas supply module 121, and the internal purge gas supply module 130, respectively.

At this time, one main pumping module 150 supplies the first entry purge gas supply module 121 and the first entry purge gas supply module 310 adjacent to the first entry purge gas supply module 310 among the plurality of reaction gas supply modules 121. It is placed between modules 310. In addition, the other main pumping module 150 is a reaction gas supply module 121 adjacent to the second entrance purge gas supply module 320 and a second entrance purge gas supply module among the plurality of reaction gas supply modules 121. It is placed between (320).

In addition, one of the reaction gas supply modules 120 is connected to an internal purge gas supply module 130 adjacent to the first exit purge gas supply module 310 among the plurality of internal purge gas supply modules 130 and a first exit gas supply module 130. It is disposed between the purge gas supply modules 310, and the other reaction gas supply module 120 is an internal purge gas supply module adjacent to the second exit purge gas supply module 320 among the plurality of internal purge gas supply modules 130. It is disposed between the gas supply module 130 and the second entry/exit purge gas supply module 320.

In addition, between the first source gas supply module 140 of one of the source gas supply modules 140 and the second source gas supply module 140 of the other source gas supply module 140, a main pumping module 150 and an internal purge gas supply module are installed. (130) and the reaction gas supply module 120 are arranged in the order of 'main pumping module - internal purge gas supply module - main pumping module - reaction gas supply module - main pumping module - internal purge gas supply module - main pumping module'. is placed as

That is, the gas supply modules of the gas supply assembly 100 according to an embodiment of the present invention are 'first entrance purge gas supply module - main pumping module - reaction gas supply module - main pumping module - internal purge gas supply module - main pumping. Module - Internal purge gas supply module - Main pumping module - Reaction gas supply module - Main pumping module - Internal purge gas supply module - Main pumping module - Internal purge gas supply module - Main pumping module - Reaction gas supply module - Main pumping module - It is arranged in the order of ‘second entry purge gas supply module’. In addition, in order to improve shielding between the reaction gas and the source gas inside the deposition area 170, a plurality of internal purge gas supply modules 130 may be arranged at each location, and between each internal purge gas supply module 130 The main pumping module 150 is disposed.

According to an embodiment of the present invention, the first and second outlet purge gas supply modules 310 and 320 of the gas supply assembly 100 of the atomic layer deposition apparatus 1 supply purge gas at a first supply pressure, The first and second side purge gas supply modules 330 and 340 may supply the purge gas at a second supply pressure. Additionally, the internal purge gas supply module 130 may supply the purge gas at a third supply pressure.

At this time, the first supply pressure is greater than or equal to the second supply pressure and the third supply pressure, the third supply pressure is greater than or equal to the second supply pressure, and the second supply pressure and the third supply pressure are greater than or equal to the second supply pressure. The pressure is constant regardless of the movement of the substrate, and the first supply pressure varies depending on the position of the substrate 220.

That is, the first supply pressure is greater than or equal to the second supply pressure and the third supply pressure, so that the substrate 220 enters the deposition region 170 from the chamber region 180 or the deposition region 170. When entering the chamber area 180, the flow of gas can be minimized.

In addition, the third supply pressure is formed to be greater than or equal to the second supply pressure, so that shielding between the reaction gas and the source gas inside the deposition region 170 is provided by the deposition chamber region 180 and the deposition region 180 based on the second axis direction. This can be done to perform better than shielding gas flow between regions 170.

In addition, in a state where at least a portion of the substrate 220 is located below any one of the first and second input and output purge gas supply modules 310 and 320, one of the input and output purge gas supply modules supplies a purge gas. It is supplied at the first inlet purge gas supply pressure (P _in/out,1 ). And, in a state where the substrate 220 is not located below the first and second exit purge gas supply modules, the first and second exit purge gas supply modules supply the purge gas to the second exit purge gas supply pressure. Supply as (P _in/out,2 ). At this time, the first outlet purge gas supply pressure (P _in/out,1 ) is greater than the second outlet purge gas supply pressure (P _in/out,2 ).

That is, when the substrate 220 enters the deposition area 170 from the chamber area 180 or enters the chamber area 180 from the deposition area 170 by moving the substrate transfer module 200, the first and One of the second exit purge gas supply modules 310 and 320 supplies purge gas at the first exit purge gas supply pressure (P _{in/out,1), and the first exit purge gas supply pressure (P in/out,1 )} . _out,1 ) can be formed to be larger than the other supply pressure. For example, when the substrate 220 enters the deposition area 170 through the lower side of the first exit purge gas supply module 310, the purge gas is supplied to the first exit purge gas supply module 310. The pressure is set to be greater than the supply pressure of the purge gas supplied to the second entry/exit purge gas supply module 320 where the substrate 220 is not located.

According to the proposed embodiment, the first exit purge gas supply pressure (P _in/out,1 ) is formed to be greater than the second exit purge gas supply pressure (P _in/out,2 ), so that the substrate transfer module 200 High-quality gas flow is minimized between the deposition area 170 and the chamber area 180, which occurs when entering the deposition area 170 from the chamber area 180 or entering the chamber area 180 from the deposition area 170. Atomic layers can be deposited.

According to an embodiment of the present invention, the distance (A) between the substrate 220 below the gas supply assembly 100 of the atomic layer deposition apparatus 1 and the reaction gas supply module 120 and the substrate 220 and the internal purge The distance (B) between the gas supply modules 150 is smaller than the distance (C) between the substrate 220 and the source gas supply module 140, so that the space division effect and deposition efficiency can be increased.

Figure 5 is an enlarged view of portion M of the gas supply assembly of Figure 4.

Referring to FIG. 5(A), the reaction gas supply module end width (W _R ) of the reaction gas supply module 120 with respect to the first axis is the inside of the internal purge gas supply module 150 with respect to the first axis. It is larger than the purge gas supply module end width (W _P ), and the internal purge gas supply module end width (W _P ) is the source gas supply module end width (W _S ) of the source gas supply module 140 with respect to the first axis. bigger than

In addition, the lower end of the reaction gas supply module 120 is formed with a first protrusion 123 protruding from the outer surface of the reaction gas supply module body, and the internal purge gas supply module 130, the first and second entry and exit purge A second protrusion 133 is formed at the lower end of the gas supply modules 310 and 320 and the first and second side purge gas supply modules 330 and 340, and protrudes from the outer surface of the purge gas supply module body, The width of the lower end of the source gas supply module 140 gradually decreases downward, and the lower edge of the source gas supply module 140 is formed with a rounded curved portion 143.

According to the proposed embodiment, the atomic layer deposition apparatus 1 includes a first protrusion 123 of the reaction gas supply module 120 and a second protrusion of the purge gas supply modules 130, 310, 320, 330, and 340. 133) and the configuration of the curved portion 143 of the source gas supply module 140, the space division effect and deposition efficiency can be increased.

Figure 6 is a diagram showing an atomic layer deposition apparatus according to another embodiment of the present invention.

This embodiment differs only in the configuration of the plasma oscillator, and in other configurations is substantially the same as the configuration of the atomic layer mounting device shown in FIGS. 1 to 5 (A, B). Therefore, the features of this embodiment are described below. The explanation is focused on the critical parts.

Referring to FIG. 6, the plasma oscillator 500 is connected to the reaction gas supply module 120 and provides plasma voltage, thereby ionizing the reaction gas discharged from the reaction gas supply module 120. That is, the ionization efficiency of the reaction gas can be improved by providing the pulse-type voltage by being directly connected to the reaction gas supply module 120 that supplies the reaction gas to the upper surface of the substrate 220.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto and can be implemented with various modifications within the scope of the claims, the detailed description of the invention, and the accompanying drawings, and this is also the present invention. It is natural that it falls within the scope of .

1: Atomic layer deposition device
100: gas supply assembly 101: gas supply assembly body
110: Main gas supply assembly
120: Reaction gas supply module
121: reaction gas supply line 122: reaction gas storage
123: first protrusion
130: Internal purge gas supply module
131: purge gas supply line 132: purge gas valve unit
133: second protrusion 134: purge bypass line
135: Purge gas storage
140: Source gas supply module
141: Source gas supply line 142: Source gas valve unit
143: Circular portion 144: Source gas storage
150: Main pumping module
160: Etching gas storage
161: Etching gas supply line 162: Etching gas valve unit
170: deposition area 180: chamber area
190: Valve unit control unit
200: Substrate transfer module
210: substrate transfer module body 220: substrate
310: First entrance purge gas supply module 320: Second entrance purge gas supply module
330: First side purge gas supply module 330: Second side purge gas supply module
410: First entrance pumping module 420: Second entrance pumping module
430: first side pumping module 440: second side pumping module
500: Plasma oscillator
L _{Side, G} : Side purge gas supply module extension length
L _{Side, P} : Side pumping module extension length
L _{in/out, G} : Entrance and exit purge gas supply module extension length
L _in/out,P : Entry and exit pumping module extension length
L ₁ : Width of the gas supply assembly body in the first axial direction
W ₁ : Width of the gas supply assembly body in the second axial direction

Claims (16)

In the atomic layer deposition device,
A gas supply assembly that supplies source gas, reaction gas, and purge gas; and
It includes a substrate transfer module disposed below the gas supply assembly, moves linearly, and has a substrate mounted on the upper side,
The gas supply assembly,
A gas supply assembly body,
A source gas supply module disposed on the gas supply assembly body and supplying the source gas to the bottom of the gas supply assembly, a reaction gas supply module supplying the reaction gas, an internal purge gas supply module supplying the purge gas, and a negative pressure A main gas supply assembly including a main pumping module that provides,
Based on the direction in which the substrate transfer module moves, the first and second entry purge gas supply modules are disposed on the front and rear sides of the main gas supply assembly, respectively, and discharge the purge gas. An atomic layer deposition device comprising:
According to claim 1,
The substrate transfer module can selectively move forward or backward along the first axis,
A first side purge is disposed on one side and the other side of the gas supply assembly and is spaced apart along a second axis that intersects the first axis, is disposed in a direction parallel to the moving direction of the substrate transfer module, and discharges the purge gas. An atomic layer deposition apparatus comprising a gas supply module and a second side purge gas supply module.
According to clause 2,
The gas supply assembly,
It includes a first inlet pumping module and a second inlet pumping module respectively disposed on the front side and the rear side of the gas supply assembly,
The outgoing pumping module extension length (L _in/out,P ) of the first incoming and outgoing pumping module and the second incoming and outgoing pumping module with respect to the second axis is determined by the first incoming and outgoing purge gas supply module and the second incoming and outgoing purge gas supply. Greater than or equal to the extension length (L _{in/out, G} ) of the inlet and out purge gas supply module for the second axis of the module, and less than or equal to the width (W ₁ ) of the gas supply assembly body in the second axis direction. An atomic layer deposition device, characterized in that.
According to clause 3,
The gas supply assembly,
A first side pumping module and a second side pumping module are spaced apart from each other along the second axis and disposed on one side and the other side of the gas supply assembly, are arranged in a direction parallel to the moving direction of the substrate transfer module, and provide the negative pressure. Including,
The side pumping module extension length (L _{Side, P} ) of the first side pumping module and the second side pumping module with respect to the second axis is the length of the first side purge gas supply module and the second side purge gas supply module. Characterized in that it is greater than or equal to the side purge gas supply module extension length (L _{Side, G} ) with respect to the second axis and is less than or equal to the width (L ₁ ) of the gas supply assembly body in the first axis direction, Atomic layer deposition device.
According to clause 4,
The internal purge gas supply module is disposed between the reaction gas supply module and the source gas supply module,
The main pumping module is respectively disposed between the source gas supply module, the reaction gas supply module, and the internal purge gas supply module,
One of the main pumping modules is disposed between the reaction gas supply module adjacent to the first entry purge gas supply module and the first entry purge gas supply module among the plurality of reaction gas supply modules,
The other main pumping module is disposed between the reaction gas supply module adjacent to the second input purge gas supply module and the second input purge gas supply module among the plurality of reaction gas supply modules. Atomic layer deposition device.
According to clause 5,
One of the reaction gas supply modules is disposed between the internal purge gas supply module adjacent to the first outlet purge gas supply module and the first outlet purge gas supply module among the plurality of internal purge gas supply modules,
The other reaction gas supply module is disposed between the internal purge gas supply module adjacent to the second input purge gas supply module and the second input purge gas supply module among the plurality of internal purge gas supply modules. Characterized by an atomic layer deposition device.
According to clause 6,
Between the first source gas supply module of one of the source gas supply modules and the second source gas supply module of the other source gas supply module,
The main pumping module, the internal purge gas supply module, and the reaction gas supply module are arranged, 'main pumping module - internal purge gas supply module - main pumping module - reaction gas supply module - main pumping module - internal purge gas supply module. - Atomic layer deposition device characterized by being arranged in the order of ‘main pumping module’.
According to clause 7,
The source gas includes a first source gas and a second source gas that is a material different from the first source gas,
The first source gas supply module supplies the first source gas,
The second source gas supply module is an atomic layer deposition apparatus, characterized in that it supplies the second source gas.
According to clause 2,
The first and second entry and exit purge gas supply modules supply the purge gas at a first supply pressure,
The first and second side purge gas supply modules supply the purge gas at a second supply pressure,
The internal purge gas supply module supplies the purge gas at a third supply pressure,
The first supply pressure is greater than or equal to the second supply pressure and the third supply pressure, and the third supply pressure is greater than or equal to the second supply pressure,
The second supply pressure and the third supply pressure are constant regardless of movement of the substrate, and the first supply pressure is variable depending on the position of the substrate.
According to clause 9,
In a state where at least a portion of the substrate is located below any one of the first and second input purge gas supply modules, the one input purge gas supply module supplies the purge gas to the first input and output purge gas supply pressure. Supply as (P _in/out,1 ),
In a state where the substrate is not located below the first and second exit purge gas supply modules, the first and second exit purge gas supply modules supply the purge gas to the second exit purge gas supply pressure (P _in/ supplied to _out,2 ),
Atomic layer deposition apparatus, characterized in that the first outlet purge gas supply pressure (P _in/out,1 ) is greater than the second outlet purge gas supply pressure (P _in/out,2 ).
According to clause 9,
The reaction gas supply module end width (W _R ) of the reaction gas supply module with respect to the first axis is greater than the internal purge gas supply module end width (W _P ) of the internal purge gas supply module with respect to the first axis. ,
The internal purge gas supply module end width (W _P ) is greater than the source gas supply module end width (W _S ) of the source gas supply module with respect to the first axis,
The distance (A) between the substrate and the reaction gas supply module and the distance (B) between the substrate and the internal purge gas supply module are smaller than the distance (C) between the substrate and the source gas supply module. Characterized by an atomic layer deposition device.
According to claim 11,
A first protrusion protruding from the outer surface of the reaction gas supply module body is formed at the lower end of the reaction gas supply module,
Second protrusions are formed on lower ends of the internal purge gas supply module, the first and second entry purge gas supply modules, and the first and second side purge gas supply modules, and protrude from the outer surface of the purge gas supply module body. is formed,
The atomic layer deposition apparatus is characterized in that the width of the lower end of the source gas supply module gradually decreases downward, and the lower edge of the source gas supply module is formed with a rounded curved portion.
According to clause 2,
a source gas supply line through which the source gas flows and is supplied to the source gas supply module;
a purge gas supply line through which the purge gas flows and supplies it to the internal purge gas supply module, the first and second exit purge gas supply modules, and the first and second side purge gas supply modules;
A purge bypass line on one side connected to the source gas supply line and on the other side connected to the purge gas supply line;
A purge gas valve unit disposed on the purge bypass line; and,
It includes a source gas valve unit disposed on the source gas supply line,
The source gas valve unit is disposed between a point where the source gas supply line and the purge bypass line are connected and a source gas reservoir where the source gas is stored.
According to clause 13,
Further comprising a valve unit control unit for controlling the purge gas valve unit and the source gas valve unit,
The valve unit control unit controls the purge gas valve unit and By controlling the operation of the source gas valve unit,
An atomic layer deposition device characterized in that only one gas is selectively supplied to the source gas supply module.
According to claim 14,
The gas supply assembly,
An etching gas reservoir that supplies etching gas;
an etching gas supply line through which the etching gas from the etching gas reservoir flows and supplies it to the source gas supply line; and,
The source gas supply line and the etching gas supply line are connected to each other, and include an etching gas valve unit disposed on the etching gas supply line,
The valve unit control unit controls the operations of the etching gas valve unit and the source gas valve unit to selectively supply only one gas to the source gas supply module.
In paragraph 1
a reaction gas supply line through which the reaction gas flows and is supplied to the reaction gas supply module;
It further includes a plasma oscillator for ionizing the reaction gas,
The plasma oscillation unit is connected to one of (1) the reaction gas supply line and (2) the reaction gas supply module.

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