KR20140102154A - 플라즈마 챔버용 가스 분배 부재 제조 방법 - Google Patents

플라즈마 챔버용 가스 분배 부재 제조 방법 Download PDF

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Publication number
KR20140102154A
KR20140102154A KR1020140016848A KR20140016848A KR20140102154A KR 20140102154 A KR20140102154 A KR 20140102154A KR 1020140016848 A KR1020140016848 A KR 1020140016848A KR 20140016848 A KR20140016848 A KR 20140016848A KR 20140102154 A KR20140102154 A KR 20140102154A
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South Korea
Prior art keywords
gas distribution
distribution member
gas
carbon
manufacturing
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Withdrawn
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KR1020140016848A
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English (en)
Korean (ko)
Inventor
트래비스 로버트 테일러
Original Assignee
램 리써치 코포레이션
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Publication of KR20140102154A publication Critical patent/KR20140102154A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020140016848A 2013-02-13 2014-02-13 플라즈마 챔버용 가스 분배 부재 제조 방법 Withdrawn KR20140102154A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/766,096 2013-02-13
US13/766,096 US8883029B2 (en) 2013-02-13 2013-02-13 Method of making a gas distribution member for a plasma processing chamber

Publications (1)

Publication Number Publication Date
KR20140102154A true KR20140102154A (ko) 2014-08-21

Family

ID=51297720

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140016848A Withdrawn KR20140102154A (ko) 2013-02-13 2014-02-13 플라즈마 챔버용 가스 분배 부재 제조 방법

Country Status (4)

Country Link
US (2) US8883029B2 (https=)
JP (1) JP6335538B2 (https=)
KR (1) KR20140102154A (https=)
TW (1) TWI662148B (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190077632A (ko) * 2016-12-08 2019-07-03 어플라이드 머티어리얼스, 인코포레이티드 시간적 원자 층 증착 프로세싱 챔버
KR20220065069A (ko) * 2019-09-27 2022-05-19 어플라이드 머티어리얼스, 인코포레이티드 통합 프로세스 가스 분배를 이용하는 모놀리식 모듈러 마이크로파 소스
WO2025106339A1 (en) * 2023-11-16 2025-05-22 Applied Materials, Inc. Plasma showerhead assembly and method of reducing defects
US12580159B2 (en) 2023-11-16 2026-03-17 Applied Materials, Inc. Plasma showerhead assembly and method of reducing defects

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8883029B2 (en) * 2013-02-13 2014-11-11 Lam Research Corporation Method of making a gas distribution member for a plasma processing chamber
US20140315392A1 (en) * 2013-04-22 2014-10-23 Lam Research Corporation Cold spray barrier coated component of a plasma processing chamber and method of manufacture thereof
US9580360B2 (en) 2014-04-07 2017-02-28 Lam Research Corporation Monolithic ceramic component of gas delivery system and method of making and use thereof
JP6375163B2 (ja) * 2014-07-11 2018-08-15 東京エレクトロン株式会社 プラズマ処理装置および上部電極アセンブリ
US9837254B2 (en) * 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
US9406535B2 (en) 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
CN106783669B (zh) * 2015-11-25 2019-04-12 无锡华瑛微电子技术有限公司 半导体处理装置及方法
US10203604B2 (en) 2015-11-30 2019-02-12 Applied Materials, Inc. Method and apparatus for post exposure processing of photoresist wafers
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
US9958782B2 (en) * 2016-06-29 2018-05-01 Applied Materials, Inc. Apparatus for post exposure bake
KR20250011246A (ko) 2019-02-28 2025-01-21 램 리써치 코포레이션 측벽 세정을 사용한 이온 빔 에칭
CN113025998B (zh) * 2019-12-24 2023-09-01 广东众元半导体科技有限公司 一种金刚石薄膜微波等离子体化学气相沉积使用的基片台
US20230051800A1 (en) * 2020-01-27 2023-02-16 Applied Materials, Inc. Methods and apparatus for plasma spraying silicon carbide coatings for semiconductor chamber applications
US11694908B2 (en) * 2020-10-22 2023-07-04 Applied Materials, Inc. Gasbox for semiconductor processing chamber
US11776793B2 (en) 2020-11-13 2023-10-03 Applied Materials, Inc. Plasma source with ceramic electrode plate
JP7763669B2 (ja) * 2021-04-30 2025-11-04 東京エレクトロン株式会社 基板処理装置および基板処理方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03162593A (ja) * 1989-11-21 1991-07-12 Hitachi Chem Co Ltd プラズマエツチング用電極板及びその製造法
JP3897393B2 (ja) * 1997-04-14 2007-03-22 東芝セラミックス株式会社 高純度炭化珪素質半導体処理部材の製造方法
JP3478703B2 (ja) * 1997-05-15 2003-12-15 信越化学工業株式会社 炭化けい素電極板の製造方法
JPH11104950A (ja) * 1997-10-03 1999-04-20 Shin Etsu Chem Co Ltd 電極板及びその製造方法
US6073577A (en) 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
FR2790953B1 (fr) * 1999-03-19 2002-08-09 Oreal Composition a phase aqueuse continue renfermant de l'acide l-2-oxothiazolidine 4-carboxylique
JP2003533010A (ja) * 1999-09-30 2003-11-05 ラム リサーチ コーポレーション 前処理を行なったガス整流板
US6444040B1 (en) * 2000-05-05 2002-09-03 Applied Materials Inc. Gas distribution plate
US6630756B2 (en) * 2001-07-12 2003-10-07 Generac Power Systems, Inc. Air flow arrangement for generator enclosure
JP2003059903A (ja) * 2001-08-10 2003-02-28 Ibiden Co Ltd プラズマエッチング装置のガス吹き出し板及びその製造方法
EP1512164B1 (en) * 2002-05-23 2016-01-06 Lam Research Corporation Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a mutli-part electrode
US7267741B2 (en) * 2003-11-14 2007-09-11 Lam Research Corporation Silicon carbide components of semiconductor substrate processing apparatuses treated to remove free-carbon
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP2005285846A (ja) * 2004-03-26 2005-10-13 Ibiden Co Ltd プラズマエッチング装置のガス吹き出し板
JP2005285845A (ja) * 2004-03-26 2005-10-13 Ibiden Co Ltd プラズマエッチング装置のガス吹き出し板
US8317968B2 (en) * 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US7712434B2 (en) 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US7480974B2 (en) 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US8679252B2 (en) * 2005-09-23 2014-03-25 Lam Research Corporation Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof
US20080087641A1 (en) * 2006-10-16 2008-04-17 Lam Research Corporation Components for a plasma processing apparatus
US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
US8069817B2 (en) 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
WO2009058235A2 (en) * 2007-10-31 2009-05-07 Lam Research Corporation High lifetime consumable silicon nitride-silicon dioxide plasma processing components
US8418649B2 (en) * 2007-12-19 2013-04-16 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
US8272346B2 (en) * 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US20110002103A1 (en) * 2009-07-01 2011-01-06 Wen-Yi Lee Interlocking Structure For Memory Heat Sink
US8419959B2 (en) * 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
KR200464037Y1 (ko) * 2009-10-13 2012-12-07 램 리써치 코포레이션 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극
US8470127B2 (en) 2011-01-06 2013-06-25 Lam Research Corporation Cam-locked showerhead electrode and assembly
JP5808697B2 (ja) * 2012-03-01 2015-11-10 株式会社日立ハイテクノロジーズ ドライエッチング装置及びドライエッチング方法
US9058960B2 (en) * 2012-05-09 2015-06-16 Lam Research Corporation Compression member for use in showerhead electrode assembly
US8975817B2 (en) * 2012-10-17 2015-03-10 Lam Research Corporation Pressure controlled heat pipe temperature control plate
US8883029B2 (en) * 2013-02-13 2014-11-11 Lam Research Corporation Method of making a gas distribution member for a plasma processing chamber
US9580360B2 (en) * 2014-04-07 2017-02-28 Lam Research Corporation Monolithic ceramic component of gas delivery system and method of making and use thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190077632A (ko) * 2016-12-08 2019-07-03 어플라이드 머티어리얼스, 인코포레이티드 시간적 원자 층 증착 프로세싱 챔버
KR20220065069A (ko) * 2019-09-27 2022-05-19 어플라이드 머티어리얼스, 인코포레이티드 통합 프로세스 가스 분배를 이용하는 모놀리식 모듈러 마이크로파 소스
US12191118B2 (en) 2019-09-27 2025-01-07 Applied Materials, Inc. Monolithic modular microwave source with integrated process gas distribution
WO2025106339A1 (en) * 2023-11-16 2025-05-22 Applied Materials, Inc. Plasma showerhead assembly and method of reducing defects
US12442080B2 (en) 2023-11-16 2025-10-14 Applied Materials, Inc. Plasma showerhead assembly and method of reducing defects
US12580159B2 (en) 2023-11-16 2026-03-17 Applied Materials, Inc. Plasma showerhead assembly and method of reducing defects

Also Published As

Publication number Publication date
US8883029B2 (en) 2014-11-11
JP6335538B2 (ja) 2018-05-30
TWI662148B (zh) 2019-06-11
US20140227866A1 (en) 2014-08-14
JP2014160819A (ja) 2014-09-04
TW201443273A (zh) 2014-11-16
US20150024582A1 (en) 2015-01-22

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