KR20140101948A - Unit for controling exhaust, apparatus and method for treating substrate using the same - Google Patents

Unit for controling exhaust, apparatus and method for treating substrate using the same Download PDF

Info

Publication number
KR20140101948A
KR20140101948A KR1020130015198A KR20130015198A KR20140101948A KR 20140101948 A KR20140101948 A KR 20140101948A KR 1020130015198 A KR1020130015198 A KR 1020130015198A KR 20130015198 A KR20130015198 A KR 20130015198A KR 20140101948 A KR20140101948 A KR 20140101948A
Authority
KR
South Korea
Prior art keywords
exhaust
substrate
buffer
module
chamber
Prior art date
Application number
KR1020130015198A
Other languages
Korean (ko)
Other versions
KR102041319B1 (en
Inventor
이승한
이종환
Original Assignee
세메스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020130015198A priority Critical patent/KR102041319B1/en
Publication of KR20140101948A publication Critical patent/KR20140101948A/en
Application granted granted Critical
Publication of KR102041319B1 publication Critical patent/KR102041319B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention relates to a device and method to manufacture a semiconductor and, more particularly, to an exhaust control unit capable of discharging a fluid during a substrate processing process and a device and method to process a substrate by using the same. According to an embodiment of the present invention, a substrate processing device includes multiple processing units executing a predetermined process for the substrate, an exhaust duct discharging exhaust for the processing units, multiple exhaust lines connecting the exhaust duct with each of the processing units, and an exhaust control unit placed at least in part of the exhaust lines and controlling the speed of the fluid exhausted from each of the processing units. The exhaust control unit includes a body placed on the exhaust lines and having a space in which the fluid moves, an air inflow member including a door opening and closing an opening provided on a side of the body, and a flux control member placed in the body and including a control plate controlling an open rate of the inside of the body.

Description

Technical Field [0001] The present invention relates to an exhaust control unit and a substrate processing apparatus and method using the same,

The present invention relates to a semiconductor manufacturing apparatus and method, and more particularly, to an exhaust control unit for exhausting a fluid during a substrate processing process, and an apparatus and method for processing a substrate using the same.

Generally, a semiconductor device is manufactured by depositing various materials on a substrate in a thin film form and patterning the same. For this purpose, different processes such as a deposition process, a photolithography process, an etching process and a cleaning process are required.

During the photolithography process, a coating process of applying a photosensitive liquid onto a substrate and a developing process of supplying a developing solution onto the substrate are included. In the etching process, a film formed on the substrate is removed by supplying an etchant onto the substrate , And the cleaning step is a step of supplying a cleaning liquid onto the substrate to remove contaminants remaining on the substrate surface.

The coating, development, etching, and cleaning processes are performed by a spin type method in which a substrate is placed on a spin chuck and a processing liquid (a photosensitive liquid, a developer, an etching liquid, a cleaning liquid) is supplied to the surface of the substrate while rotating the substrate.

In the coating step, a fluid including particles generated during the process is discharged to the outside of the chamber. In general, a coating process is carried out simultaneously or sequentially in a plurality of processing units, and is exhausted from each processing unit to one exhaust duct. And includes a low-speed exhaust process during which the flow rate to be discharged must be kept low in accordance with process characteristics during the application process. Generally, in the low-speed exhaust process, outside air flows into the line through which the fluid is exhausted to regulate the flow rate exhausted from the processing unit. However, in this way, adjusting the flow rate exhausted from one processing unit also affects the flow rate exhausted from the other processing unit. As a result, there is a problem that precise process control is difficult and the reliability of the product is low.

An object of the present invention is to provide an exhaust control unit in which the exhaust flow rate of another processing unit is not interfered when the exhaust flow rate of some of the plurality of processing units is adjusted, and a substrate processing apparatus and method using the same.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and the problems not mentioned can be clearly understood by those skilled in the art from the description and the accompanying drawings will be.

The present invention provides a substrate processing apparatus.

A substrate processing apparatus according to an embodiment of the present invention includes a plurality of processing units that perform a predetermined process on a substrate, an exhaust duct that commonly performs exhaust for the plurality of processing units, A plurality of exhaust lines each connecting the processing units and an exhaust control unit which is disposed in at least a part of the plurality of exhaust lines and regulates the flow rate of the fluid discharged from each of the processing units, An outer inflow inlet member having a door provided on one side of the body and provided with a space in which the fluid is moved, a door provided on one side of the body, and an outer inflow inlet member located inside the body, And a flow control member having a throttle plate.

The exhaust control unit may further include a driver connected to the door and the control panel to simultaneously drive the door and the control panel.

The driving unit may include a rotation shaft connected to one side of the throttle plate and a link connecting the throttle plate and the door.

The exhaust control unit may move the door, the link, and the throttle plate together. When the door is opened, the throttle plate may be moved so that the internal opening rate of the exhaust line is lowered.

The exhaust control unit may be located outside the exhaust duct.

Wherein the exhaust control unit further includes a controller for controlling the actuator, wherein the controller is configured to control the actuator such that the flow of the fluid discharged from a part of the plurality of processing units becomes slower than that of the other processing units, Can be controlled.

Further, the present invention provides an exhaust control unit.

According to an embodiment of the present invention, there is provided an exhaust control unit including: a body provided with a space through which the fluid is moved; an outside air inflow member having a door that opens and closes an opening provided on one side of the body; And a flow control member having a throttle plate for regulating an internal opening rate of the body.

The exhaust control unit may further include a driver connected to the door and the control panel to simultaneously drive the door and the control panel.

The driving unit may include a rotation shaft connected to one side of the throttle plate and a link connecting the throttle plate and the door.

The exhaust control unit may move the door, the link, and the throttle plate together. When the door is opened, the throttle plate may be moved so that the internal opening rate of the exhaust line is lowered.

Wherein the exhaust control unit further includes a controller for controlling the actuator, wherein the controller is configured to control the actuator such that the flow of the fluid discharged from a part of the plurality of processing units becomes slower than that of the other processing units, Can be controlled.

The present invention also provides a substrate processing method.

A substrate processing method according to an embodiment of the present invention is a method for exhausting a fluid from a plurality of processing units using one exhaust duct, the method comprising: a high-speed evacuation step in which the fluid is evacuated at a first flow rate; And a flow rate control step of controlling the flow rate of the fluid, wherein the flow rate adjustment step includes a first adjustment step of introducing the outside air into the exhaust control unit in which the fluid is exhausted, And a second adjusting step of adjusting an internal opening ratio of the exhaust control unit to be exhausted.

The first adjustment step and the second adjustment step may be provided at the same time.

The first adjustment step and the second adjustment step may be adjusted through one driver.

The flow velocity at which the fluid and the outside air are moved together with the exhaust duct in the low-speed evacuation step may be provided in the same manner as the first flow velocity.

The opening ratio of the opening and the internal opening ratio of the throttle plate can be adjusted when the flow rate of the exhaust gas is changed in a part of the plurality of processing units.

According to one embodiment of the present invention, when adjusting the exhaust flow rate of some of the plurality of processing units, the exhaust flow rates of the other processing units are not interfered, thereby improving the process efficiency of each processing unit.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view of a substrate processing apparatus viewed from the side; Fig.
Fig. 2 is a view seen from the direction AA in Fig.
Fig. 3 is a view as seen from the direction BB in Fig.
Fig. 4 is a view seen from the CC direction of Fig.
5 is a view showing another embodiment of the substrate processing apparatus of FIG.
Figure 6 is a view showing the interior of an embodiment of a resist application chamber.
FIG. 7 is a view showing the processing unit, the exhaust control unit, and the exhaust duct of FIG. 6;
8 is a plan view showing an upper surface of the exhaust control unit of Fig.
Fig. 9 is a view as seen from the DD direction in Fig.
10 is a flow chart showing the process of evacuating the processing unit.
11 to 13 are views showing a process in which the exhaust flow rate is regulated using the exhaust control unit.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified into various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

The facilities of this embodiment are used to perform a photolithography process on a substrate such as a semiconductor substrate or a flat panel display panel. In particular, the facilities of this embodiment are used for performing a coating process and a developing process on a substrate.

1 to 4 are views schematically showing a substrate processing apparatus 1 according to an embodiment of the present invention. FIG. 1 is a sectional view of the substrate processing apparatus viewed from the side, FIG. 2 is a view seen from the direction AA in FIG. 1, FIG. 3 is a view seen from a direction BB in FIG. 1, to be.

The substrate processing apparatus 1 includes a load port 100, an index module 200, a buffer module 300, a process module 400, an interface module 500, an inspection module 700, and a control unit 800 do. The load port 100, the index module 200, the buffer module 300, the process module 400, and the interface module 500 are sequentially arranged in one direction in one direction. The direction in which the index module 200, the buffer module 300, the process module 400 and the interface module 500 are disposed is referred to as a first direction 12, The direction perpendicular to the first direction 12 and the direction perpendicular to the second direction 14 will be referred to as the third direction 16. [

The substrate W is moved in a state accommodated in the lot 20. At this time, the rod 20 has a structure that can be sealed from the outside. For example, the rod 20 may be a front open unified pod (FOUP) having a door at the front. Hereinafter, each configuration will be described in detail with reference to Figs. 1 to 4. Fig.

The load port 100 has a mounting table 120 on which the rod 20 accommodating the substrates W is placed. A plurality of mounts 120 are provided, and the mounts 200 are arranged in a line along the second direction 14. In Fig. 2, four placement tables 120 are provided.

The index module 200 transfers the substrate W between the rod 20 and the buffer module 300 placed on the table 120 of the load port 100. The index module 200 has a frame 210, an index robot 220, and a guide rail 230. The frame 210 is provided generally in the shape of an inner rectangular parallelepiped and is disposed between the load port 100 and the buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed within the frame 210. The index robot 220 is moved in the first direction 12, the second direction 14 and the third direction 16 so that the hand 221 that directly handles the substrate W can be moved and rotated in the first direction 12, the second direction 14, . The index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. The arm 222 is provided with a stretchable structure and a rotatable structure. The support base 223 is disposed along the third direction 16 in the longitudinal direction. The arm 222 is coupled to the support 223 to be movable along the support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rails 230 are provided so that their longitudinal direction is arranged along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Further, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the rod 20.

The buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a buffer robot 360. The frame 310 is provided in the shape of an empty rectangular parallelepiped and is disposed between the index module 200 and the process module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed in the third direction 16 from below. The second buffer 330 and the cooling chamber 350 are positioned at a height corresponding to the coating module 401 of the process module 400 to be described later and the second buffer 330 and the cooling chamber 350 are positioned at a height corresponding to the coating module 401 of the process module 400 Lt; RTI ID = 0.0 > 402 < / RTI > The buffer robot 360 is positioned at a distance from the second buffer 330, the cooling chamber 350, and the first buffer 320 in the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of substrates W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed within the housing 331 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 332. The housing 331 is configured so that the index robot 220, the buffer robot 360 and the developing robot 482 of the development module 402 described later carry the substrate W into or from the support 332 in the housing 331, (Not shown) in the direction in which the index robot 220 is provided, in the direction in which the buffer robot 360 is provided, and in the direction in which the development robot 482 is provided, so that the development robot 482 can be taken out. The first buffer 320 has a structure substantially similar to that of the second buffer 330. The housing 321 of the first buffer 320 has an opening in a direction in which the buffer robot 360 is provided and a direction in which the application unit robot 432 located in the application module 401 described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to one example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The buffer robot 360 transfers the substrate W between the first buffer 320 and the second buffer 330. The buffer robot 360 has a hand 361, an arm 362, and a support base 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable configuration so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be linearly movable along the support 363 in the third direction 16. The support base 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support member 363 may be provided longer in the upward or downward direction. The first buffer robot 360 may be provided so that the hand 361 is simply driven in two directions along the second direction 14 and the third direction 16.

The cooling chamber 350 cools the substrate W, respectively. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the substrate W is placed and a cooling means 353 for cooling the substrate W. [ As the cooling means 353, various methods such as cooling with cooling water and cooling using a thermoelectric element can be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly (not shown) for positioning the substrate W on the cooling plate 352. The housing 351 is provided with an index robot 220 so that the developing robot 482 provided in the index robot 220 and a developing module 402 to be described later can carry the substrate W into or out of the cooling plate 352 (Not shown) in the direction provided and the direction in which the developing robot 482 is provided. Further, the cooling chamber 350 may be provided with doors (not shown) for opening and closing the above-described opening.

The process module 400 performs a developing process for developing the substrate W after the coating process for applying the photoresist on the substrate W and the exposure process. The process module 400 has a generally rectangular parallelepiped shape. The process module 400 has an application module 401 and a development module 402. The application module 401 and the development module 402 are arranged so as to be partitioned into layers with respect to each other. According to one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a process of applying a photosensitive liquid such as a photoresist to the substrate W and a heat treatment process such as heating and cooling for the substrate W before and after the resist application process. The application module 401 has a resist application chamber 410, a bake chamber 420, and a transfer chamber 430. The resist application chamber 410, the bake chamber 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. [ The resist application chamber 410 and the bake chamber 420 are positioned apart from each other in the second direction 14 with the transfer chamber 430 interposed therebetween. A plurality of resist coating chambers 410 are provided. According to one example, one resist coating chamber 410 may be provided in the first direction 12, and a plurality of resist coating chambers 410 may be provided in the third direction 16. [ Alternatively, as shown in FIG. 5, a plurality of resist application chambers 410 may be provided in the first direction 12 and the third direction 16, respectively. In this case, one processing unit may be provided in each of the resist application chambers 410.

In Fig. 1, an example in which three resist application chambers 410 are provided is shown. A plurality of bake chambers 420 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 420 are provided. Alternatively, however, the bake chamber 420 may be provided in a greater number.

The transfer chamber 430 is positioned in parallel with the first buffer 320 of the buffer module 300 in the first direction 12. In the transfer chamber 430, a dispenser robot 432 and a guide rail 433 are positioned. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 is connected to the bake chambers 420, the resist application chambers 400, the first buffer 320 of the buffer module 300 and the first buffer 520 of the interface module 500, And transfers the substrate W therebetween. The guide rails 433 are arranged so that their longitudinal directions are parallel to the first direction 12. The guide rails 433 guide the applying robot 432 to move linearly in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. The arm 435 is provided in a stretchable configuration so that the hand 434 is movable in the horizontal direction. The support 436 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 435 is coupled to the support 436 so as to be linearly movable in the third direction 16 along the support 436. The support 436 is fixedly coupled to the pedestal 437 and the pedestal 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

The resist coating chambers 410 all have the same structure. However, the types of the photoresist used in each of the resist coating chambers 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist coating chamber 410 applies a photoresist on the substrate W. [ According to one example, the resist coating chamber 410 has a plurality of processing units 4110a to 4110c. Alternatively, the resist application chamber 410 may have one processing unit. Hereinafter, a resist coating chamber 410 having a plurality of processing units 4110a to 4110c will be described.

FIG. 6 is a view showing an interior of an embodiment of the resist coating chamber, FIG. 7 is a view showing the processing unit, the exhaust control unit, and the exhaust duct of FIG. 6, and FIG. 8 is a cross- And FIG. 9 is a view seen from the DD direction of FIG.

6 to 9, the resist coating chamber 410 includes a processing unit 4110, an exhaust line 4130, an exhaust duct 4190, and an exhaust control unit 4300 in the interior.

The processing unit 4110 has a housing 4111, a support plate 4112, and a nozzle 4113. The housing 4111 has a cup shape with an open top. The support plate 4112 is placed in the housing 4111 and supports the substrate W. [ The support plate 4112 is rotatably provided. The nozzle 4113 supplies the photoresist onto the substrate W placed on the support plate 4112. The nozzle 4113 has a circular tube shape and can supply photoresist to the center of the substrate W. [ Alternatively, the nozzle 4113 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 4113 may be provided with a slit. In addition, the resist coating chamber 4110 may further be provided with a nozzle 4114 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate W to which the photoresist is applied.

The exhaust line 4130 connects the processing unit 4110 and the exhaust duct 4190. The exhaust line 4130 exhausts the fluid from the housing 4111 to the exhaust duct 4190 at a constant flow rate. The flow velocity of the fluid discharged from the housing 4111 may be lowered or increased according to the process.

The exhaust duct 4190 is located under the processing unit 4110. The exhaust duct 4190 is connected to one side of the exhaust line 4130. The exhaust duct 4190 exhausts the fluid moved from the processing unit 4110 through the exhaust line 4130 to the outside of the resist application chamber 410. According to one example, a plurality of processing units 4110a to 4110c are connected to one exhaust duct 4190. [ Therefore, when a constant sound pressure is provided through the exhaust duct 4190, the same sound pressure is also provided to each of the plurality of processing units 4110a to 4110c. Whereby the fluid can be exhausted at a constant flow rate from each of the plurality of processing units 4110a to 4110c.

The exhaust control unit 4300 is located on the exhaust line 4130. The exhaust control unit 4300 regulates the flow rate of the fluid discharged from the processing unit 4110 to the exhaust duct 4190. The exhaust control unit 4300 includes a body 4310, an outside air inflow member 4330, a flow rate regulating member 4350, a driver 4370, and a controller 4390.

The body 4310 is located on the exhaust line 4130. The body 4310 is provided with a space through which the fluid discharged therein is moved. According to an example, an exhaust line 4130 may be connected to one side of the body 4310, and an exhaust duct 4190 may be connected to the other side.

The outside air inflow member 4330 includes an opening 4331 and a door 4333. The opening 4331 is located on one side of the body 4310. The opening 4331 serves as an inlet through which the outside air flows into the body 4310. The door 4333 is provided so as to face the opening 4331 outside the body 4310. The door 4333 may be provided with a cross-sectional area larger than the opening 4331. According to one example, the door 4333 is provided to be movable in the second direction 14. The door 4333 can close or open the opening 4331 while moving in the second direction 14. [ The door 4333 can control the outside air flowing into the body 4310.

The flow rate regulating member 4350 includes a regulating plate 4351. The adjustment plate 4351 is located inside the body 4310. The throttle plate 4351 may be provided in a flat plate shape. The length of the regulating plate 4351 may be smaller than the inner diameter of the body 4310. [ The adjusting plate 4351 is provided so that one side is fixed and the other side is rotatably movable. The throttle plate 4351 rotates inside the body 4310 to adjust the flow rate of the fluid moving inside the body 4310. According to one example, the throttle plate 4351 is connected to the door 4333 and can be rotationally moved according to the movement of the door 4333. Alternatively, the throttle plate 4351 may not be connected to the door 4333. In this case, the adjusting plate 4351 can be moved inside the body 4310 through a separate driving member (not shown).

The driver 4370 includes a rotation shaft 4371 and a link 4373. [ The driver 4370 is located inside the body 4310. The driver 4370 is provided in the body 4310 so that the adjustment plate 4351 is rotated to move in accordance with the movement of the door 4333. The rotation shaft 4371 is provided in a fixed state on one side inside the body 4310. The rotating shaft 4371 is connected to one end of the throttle plate 4351. The rotation shaft 4371 fixes one end of the adjustment plate 4351 so that the other end of the adjustment plate 4351 can be rotated around the rotation axis 4371. The link 4373 connects the throttle plate 4351 and the door 4333. The link 4373 is provided so that the throttle plate 4351 can be rotated about the rotation axis 4371 when the door 4333 moves. Optionally, driver 4370 may not be provided. In this case, the throttle plate 4351 and the door 4333 can be adjusted with separate driving parts.

The controller 4390 is connected to the door 4333. The controller 4390 can open or close the opening 4331 by controlling the movement of the door 4333. [ The controller 4390 can control the outside air flowing into the inside of the body 4310. Further, the controller 4390 can control the throttle plate 4351 by moving the door 4333. Fig. Accordingly, the controller 4390 can control the throttle plate 4351 and the door 4333 at the same time. Alternatively, the controller 4390 may control the throttle plate 4351 and the door 4333 separately.

1 to 4, the bake chamber 420 heat-treats the substrate W. As shown in FIG. For example, the bake chambers 420 may be formed by a prebake process for heating the substrate W to a predetermined temperature to remove organic substances and moisture on the surface of the substrate W, A soft bake process is performed after coating the substrate W on the substrate W, and a cooling process for cooling the substrate W after each heating process is performed. The bake chamber 420 has a cooling plate 421 or a heating plate 422. The cooling plate 421 is provided with a cooling means 423 such as a cooling water or a thermoelectric element. The heating plate 422 is also provided with a heating means 424, such as a hot wire or a thermoelectric element. The cooling plate 421 and the heating plate 422 may be provided in a single bake chamber 420, respectively. Optionally, some of the bake chambers 420 may include only the cooling plate 421, and the other portions may include only the heating plate 422.

The developing module 402 includes a developing process for supplying a developing solution to obtain a pattern on the substrate W to remove a part of the photoresist and a heat treatment process such as heating and cooling performed on the substrate W before and after the developing process . The development module 402 has a development chamber 460, a bake chamber 470, and a transfer chamber 480. The development chamber 460, the bake chamber 470, and the transfer chamber 480 are sequentially disposed along the second direction 14. The development chamber 460 and the bake chamber 470 are positioned apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing chambers 460 are provided, and a plurality of developing chambers 460 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six development chambers 460 are provided. A plurality of bake chambers 470 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, four bake chambers 470 are provided. Alternatively, however, the bake chamber 470 can be provided in greater numbers.

The transfer chamber 480 is positioned in parallel with the second buffer 330 of the buffer module 300 in the first direction 12. In the transfer chamber 480, the developing robot 482 and the guide rail 483 are positioned. The delivery chamber 480 has a generally rectangular shape. The development robot 482 is connected to the bake chambers 470, the development chambers 460, the second buffer 330 of the buffer module 300 and the cooling chamber 350, (530). The guide rail 483 is arranged such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing robot 482 to linearly move in the first direction 12. The developing sub-robot 482 has a hand 484, an arm 485, a supporting stand 486, and a pedestal 487. The hand 484 is fixed to the arm 485. The arm 485 is provided in a stretchable configuration to allow the hand 484 to move in a horizontal direction. The support 486 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 such that it is linearly movable along the support 486 in the third direction 16. The support table 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

The development chambers 460 all have the same structure. However, the types of developers used in the respective developing chambers 460 may be different from each other. The development chamber 460 removes a region of the photoresist on the substrate W where light is irradiated. At this time, the area of the protective film irradiated with the light is also removed. Depending on the type of selectively used photoresist, only the areas of the photoresist and protective film that are not irradiated with light can be removed.

The development chamber 460 has a housing 461, a support plate 462, and a nozzle 463. The housing 461 has a cup shape with an open top. The support plate 462 is located in the housing 461 and supports the substrate W. [ The support plate 462 is rotatably provided. The nozzle 463 supplies the developer onto the substrate W placed on the support plate 462. The nozzle 463 has a circular tube shape and can supply developer to the center of the substrate W. [ Alternatively, the nozzle 463 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 463 may be provided with a slit. Further, the developing chamber 460 may further be provided with a nozzle 464 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate W to which the developer is supplied.

The bake chamber 470 heat-treats the substrate W. For example, the bake chambers 470 may include a post-bake process for heating the substrate W before the development process is performed, a hard bake process for heating the substrate W after the development process is performed, And a cooling step for cooling the substrate. The bake chamber 470 has a cooling plate 471 or a heating plate 472. The cooling plate 471 is provided with a cooling means 473 such as a cooling water or a thermoelectric element. Or the heating plate 472 is provided with a heating means 474 such as a hot wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 may be provided in one bake chamber 470, respectively. Optionally, some of the bake chambers 470 may have only a cooling plate 471, while the other may have only a heating plate 472. [

The interface module 500 transfers the substrate W between the process module 400 and the exposure apparatus 600. The interface module 500 has a frame 510, a first buffer 520, a second buffer 530, and an interface robot 540. The first buffer 520, the second buffer 530, and the interface robot 540 are located within the frame 510. The first buffer 520 and the second buffer 530 are spaced apart from each other by a predetermined distance and are stacked on each other. The first buffer 520 is disposed higher than the second buffer 530. The first buffer 520 is located at a height corresponding to the application module 401 and the second buffer 530 is located at a height corresponding to the development module 402. The first buffer 520 is arranged in a line along the first direction 12 with the transfer chamber 430 of the application module 401 and the second buffer 530 is arranged in a line along the first direction 12, And are arranged in a line along the first direction 12 with the transfer chamber 480.

The interface robot 540 is spaced apart from the first buffer 520 and the second buffer 530 in the second direction 14. The interface robot 540 carries the substrate W between the first buffer 520, the second buffer 530 and the exposure apparatus 600. The interface robot 540 has a structure substantially similar to that of the buffer robot 360.

The first buffer 520 temporarily stores the substrates W processed in the application module 401 before they are transferred to the exposure apparatus 600. [ The second buffer 530 temporarily stores the processed wafers W in the exposure apparatus 600 before they are transferred to the developing module 402. The first buffer 520 has a housing 521 and a plurality of supports 522. The supports 522 are disposed within the housing 521 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 522. The housing 521 has a direction in which the interface robot 540 is provided so that the interface robot 540 and the application robot 432 can carry the substrate W into or from the support table 722 into the housing 521, And has an opening (not shown) in the direction in which the robot 432 is provided. The second buffer 530 has a structure substantially similar to that of the first buffer 520. [ However, the housing 531 of the second buffer 530 has an opening (not shown) in the direction in which the interface robot 540 is provided and in the direction in which the developing robot 482 is provided. The interface module may be provided with only the buffers and robots as described above without providing a chamber for performing a predetermined process on the substrate.

The inspection module 700 performs an inspection process on the substrate W that has been processed in the process module 400. The inspection module 700 inspects the substrate W that has been subjected to the developing process and the baking process in the developing module 402. The inspection module 700 includes a defect inspection apparatus for detecting the inconvenience and defects of development processing, a foreign matter inspection apparatus for inspecting the foreign object on the surface of the substrate W, a line width (CD) of the pattern of the resist film formed on the substrate W A stacking alignment inspection apparatus for checking the accuracy of overlapping alignment between the substrate W and the photomask after exposure, a residue inspection apparatus for detecting a resist residue remaining on the substrate W after development processing, And a defocus inspection apparatus for detecting a positional difference of a pattern generated in the exposure apparatus. The apparatus can be appropriately selected depending on the type of the desired inspection. In addition, the number of layouts and the layout of each of the inspection units can be determined according to the type of the desired inspection or the space that can be arranged.

The inspection module 700 may be disposed within the process module 400. The inspection module 700 includes an inspection chamber 710 that provides a space in which the inspection process is performed. The inspection chamber 710 may be disposed below the process module 400 in which the development module 402 is disposed. The inspection chamber 710 is disposed between the bake chambers 470 of the development module 402 and the index module 300 and is aligned with the bake chambers 470 in the first direction 12. The inspection chambers 710 may be provided by stacking a plurality of inspection chambers 710 in the third direction 16.

The control unit 800 selects a substrate to be inspected to be provided to the inspection module 700 among the substrates W processed in the process module 400. The control unit 800 selects the substrate to be inspected so that the inspection process is completed within the processing time of the substrates W in units of the rods 20. [ The control unit 800 calculates the estimated time required to process the entire substrate in units of the rods 20 and selects the substrate to be inspected to be provided to the inspection module 700 so that the inspection process is completed within the estimated time required for the process. The control unit 800 can select some substrates W among the processed substrates W in the process module 400 and select them as inspection target substrates. The control unit 800 can sample the substrates W that finish the process in the process module 400 at predetermined intervals to select the substrate to be inspected. Alternatively, the controller 800 can select the substrate W as a substrate to be inspected in the order of completion of the process in the process module 400.

Hereinafter, a method of processing a substrate using the above-described substrate processing apparatus 1 will be described.

The rods 20 accommodating the substrates W are placed on the mount 120 of the load port 100. The door of the rod 20 is opened by the door opener. The index robot 220 removes the substrate W from the rod 20 and transfers it to the second buffer 330. The buffer robot 360 carries the substrate W stored in the second buffer 330 to the first buffer 320. The application robot 432 removes the substrate W from the first buffer 320 and transfers the wafer W to the bake chamber 420 of the application module 401. The bake chamber 420 sequentially performs a pre-bake and a cooling process. The application part robot 432 removes the substrate W from the bake chamber 420 and transfers it to the resist application chamber 410. The resist coating chamber 410 applies a photoresist on the substrate W. [ The applicator robot 432 then transfers the substrate W from the resist application chamber 410 to the bake chamber 420. The bake chamber 420 performs a soft bake process on the substrate W.

The application robot 432 removes the substrate W from the bake chamber 420 and transfers the substrate W to the first buffer 520 of the interface module 500. The interface robot 540 carries the substrate W from the first buffer 520 to the exposure apparatus 600. An exposure process is performed on the substrate W in the exposure apparatus 600. [ Then, the interface robot 540 carries the substrate W from the exposure apparatus 600 to the second buffer 530.

The developing robot 482 takes the substrate W from the second buffer 530 and transfers it to the bake chamber 470 of the developing module 402. [ The bake chamber 470 sequentially performs post bake and cooling processes. The developing sub-robot 482 takes the substrate W from the bake chamber 470 and transfers it to the developing chamber 460. The development chamber 460 supplies a developer onto the substrate W to perform a development process. The developing robot 482 carries the substrate W from the developing chamber 460 to the bake chamber 470. [ The bake chamber 470 performs a hard bake process on the substrate W.

The control unit 800 selects a substrate to be inspected among the substrates W on which the coating / developing process has been completed. The substrate W selected as a substrate to be inspected is taken out of the bake chamber 470 by the developing robot 482 and conveyed to the inspection chamber 710. On the other hand, the substrate W not selected as a substrate to be inspected is taken out by the developing robot 482 and transferred to the cooling chamber 350 of the buffer module 300.

Hereinafter, a substrate processing method including the process of discharging the interior of the resist coating chamber 410 using the substrate processing apparatus 1 will be described.

10 is a flow chart showing the process of evacuating the processing unit.

10, when the processing unit is evacuated, it includes a high-speed evacuation step S10, a flow rate adjusting step S20, a low-speed evacuation step S30, a flow rate adjusting step S40, and a high-speed evacuation step S50 do. The flow rate adjusting steps S20 and S40 include a first adjusting step S21 and S41 for adjusting the outside air flow and a second adjusting step S22 and S42 for adjusting the internal opening ratio of the exhaust adjusting unit. The high-speed evacuation steps (S10, S50) and the low-speed evacuation step (S30) are determined as the coating process progresses. Therefore, the low-speed evacuation step S30 may be performed twice or more depending on the specific situation of the application process. Also, the high-speed evacuation steps S10 and S50 may be provided more than once. The exhausted fluid may be exhausted to the first flow rate in the high-speed exhaust step (S10, S50), and may be exhausted to the second flow rate in the low-speed exhaust step (S20). Wherein the first flow rate is provided faster than the second flow rate.

A plurality of processing units 4110 located inside the resist coating chamber 410 are exhausted through one exhaust duct 4190. The exhaust duct 4190 is provided with a constant negative pressure. The plurality of processing units 4110 are respectively supplied with the same sound pressure through the exhaust duct 4190. Each of the plurality of processing units 4110 has a different process speed. For example, when one processing unit 4110a proceeds to the low-speed evacuation step S30, the remaining processing units 4110b and 4110c may proceed to high-speed evacuation steps S10 and S50.

Generally, the flow rate adjustment step S20 when the processing unit proceeds from the high-speed evacuation step S10 to the low-speed evacuation step S30 increases the outside air flowing into the exhaust line connected to the processing unit. In addition, the flow rate adjusting step S40 when the processing unit proceeds from the low-speed evacuation step S30 to the high-speed evacuation step S50 reduces the outside air flowing into the evacuation line. With this method, the flow rate of the fluid discharged from the processing unit can be adjusted. However, this method has affected the flow rate of other exhaust units connected to one exhaust duct. For this reason, each time the exhaust gas flow rate of one processing unit is changed, it affects the exhaust gas flow rate of the other processing unit, resulting in a reduction in process efficiency and a decrease in process reliability.

The substrate processing method according to an embodiment of the present invention may include a flow rate adjusting step of adjusting an exhaust flow rate while advancing from a low speed exhaust step S30 or a low speed exhaust step S30 to a high speed exhaust step S50 in a high- A first adjusting step S21 for adjusting the outside air flowing in the first and second flow paths S20 and S40 and a second adjusting step S22 for adjusting the opening ratio of the passage through which the fluid is discharged are simultaneously performed. It is possible to minimize the influence on the exhaust flow rate of the remaining processing units 4110b and 4110c when the exhaust flow speed of a part of the processing units 4110a of the plurality of processing units 4110 is changed.

11 to 13 are views showing a process of controlling the exhaust flow rate using the exhaust control unit.

Referring to FIGS. 11 to 13, the high-speed evacuation step S10 is maintained at the beginning of the application process. The high-speed evacuation step S10 starts before the substrate W is moved to the processing unit 4110. [ At this time, the door 4333 is provided at a position where the opening 4331 is slightly opened. If the opening 4331 is completely closed when the exhaust is started, the exhaust flow rate of the other processing unit may be affected. When the door 4333 closes the opening 4331, the throttle plate 4373 is provided in a horizontal position with respect to the body 4310. In this case, the throttle plate 4373 does not affect the flow rate of the fluid discharged inside the body 4310. Therefore, the exhaust flow velocity is provided so that there is no significant difference between the case where the exhaust gas is moved from the processing unit 4110 to the exhaust line 4130 and the case where it is moved inside the exhaust control unit 4300.

A flow control step S20 is provided so that some processing units 4110a among the plurality of processing units 4110 proceed from the high-speed evacuation step S10 to the low-evacuation step S30. In the flow rate adjusting step S20, the door 4333 is moved so that the opening 4331 is opened. The adjusting plate 4373 is rotationally moved by the link 4373 connected to the door 4333 as the door 4333 is moved. The throttle plate 4373 is moved to a position where the door 4333 opens the opening 4331 to block the flow of the exhaust fluid inside the body 4310. For example, the adjustment plate 4373 may be provided so as to be positioned in a direction close to the direction perpendicular to the body 4310. Through which the throttle plate 4373 hinders the movement of the exhausted fluid. Therefore, the exhaust flow rate from the processing unit 4110a to the exhaust control unit 4300 is slowed down. Outside air flows through the opening 4331. The introduced outside air is moved together with the exhaust fluid to the exhaust duct 4190. At this time, the introduced outside air and the exhaust fluid passing through the throttle plate 4373 are moved to the exhaust duct 4190 together. The flow rate of the exhausted fluid passing through the introduced outside air and the throttle plate 4373 can be provided substantially equal to the first flow rate in the high-speed evacuation step S10. In this case, the influence on the flow rate of the fluid discharged from the other processing units 4110b and 4110c connected to the same exhaust duct 4190 can be minimized. This improves the efficiency of the substrate processing process and increases the reliability of the process. In the substrate processing method according to an embodiment of the present invention, a first adjusting step (S21) for controlling the exhaust flow rate by introducing outside air and a control unit (4373) for adjusting the internal opening ratio of the exhaust adjusting unit 2 control step S22 are simultaneously performed to adjust the exhaust speed. According to one example, the first adjusting step S21 and the second adjusting step S22 may be adjusted through a single driver 4370. [

11 to 13, the operation of the exhaust control unit 4300 in the flow control step S20 in which the exhaust flow rate is changed from the high-speed exhaust step S10 to the low-speed exhaust step S30 will be. In contrast, in the flow rate control step S40 in which the exhaust flow rate changes from the low-speed exhaust step S30 to the high-speed exhaust step S50, the door 4333 closes the opening 4331 It blocks the inflow of outside air. The control panel 4351 rotates along the link 4373 and is positioned in a horizontal direction with respect to the body 4310. In this case, the outside air is not introduced, and the regulating plate 4351 does not interfere with the exhaust fluid, so that the exhaust fluid is exhausted at a higher speed than when ambient air is introduced. As described above, when the flow rate of the exhaust gas discharged from a part of the processing units 4110a of the plurality of processing units 4110 is changed, the opening ratio of the opening 4331 and the internal opening ratio of the throttle plate 4373 are adjusted. It is possible to change the exhaust flow rate of some processing units without interfering with the exhaust flow rates of the other processing units 4110b and 4110c.

Further, in the above-described substrate processing apparatus and method, although the flow velocity of the exhausted fluid is set to the first flow velocity and the second flow velocity, the exhaust flow velocity may be changed to the third flow velocity fourth flow velocity or the like depending on the specific situation in which the process proceeds. The flow rate can also be controlled in the same manner as the above-described method even in the case of such an exhaust flow rate change.

Further, in the above-described substrate processing apparatus and method, the resist coating chamber 410 is described as having three processing units 4110a to 4110c. Alternatively, the resist application chamber 410 may have three or more processing units 4110. Further, as shown in Fig. 5, the resist coating chamber 410 may include only one processing unit 4110. Fig.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

1: substrate processing apparatus 100: load port
200: Index module 300: Buffer module
400: process module 401: dispensing module
4110: Processing unit 4130: Exhaust line
4190: exhaust duct 4300: exhaust control unit
4330: Outer air inflow member 4350: Flow control member
402: development module 500: interface module
600: Exposure module 700: Inspection module
800:

Claims (2)

A plurality of processing units for performing a predetermined process on the substrate;
An exhaust duct for exhausting the plurality of processing units in common;
A plurality of exhaust lines connecting the exhaust duct and the plurality of processing units, respectively; And
And an exhaust control unit located in at least a part of the plurality of exhaust lines and regulating a flow rate of the fluid exhausted from each of the processing units,
The exhaust control unit
A body disposed on the exhaust line and provided with a space through which the fluid is moved;
An outside air inflow member having a door that opens and closes an opening provided on one side of the body; And
And a flow rate adjusting member located inside the body and having a throttle plate for adjusting an internal opening rate of the body. The method according to claim 1,
The exhaust control unit
And a driver connected to the door and the control panel to simultaneously drive the door and the control panel.
KR1020130015198A 2013-02-13 2013-02-13 Unit for controling exhaust, apparatus and method for treating substrate using the same KR102041319B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020130015198A KR102041319B1 (en) 2013-02-13 2013-02-13 Unit for controling exhaust, apparatus and method for treating substrate using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130015198A KR102041319B1 (en) 2013-02-13 2013-02-13 Unit for controling exhaust, apparatus and method for treating substrate using the same

Publications (2)

Publication Number Publication Date
KR20140101948A true KR20140101948A (en) 2014-08-21
KR102041319B1 KR102041319B1 (en) 2019-11-06

Family

ID=51747011

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130015198A KR102041319B1 (en) 2013-02-13 2013-02-13 Unit for controling exhaust, apparatus and method for treating substrate using the same

Country Status (1)

Country Link
KR (1) KR102041319B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190022997A (en) * 2017-08-25 2019-03-07 세메스 주식회사 Method and Apparatus for treating substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006030849A1 (en) * 2004-09-15 2006-03-23 Hitachi Kokusai Electric Inc. Semiconductor manufacturing equipment and semiconductor device manufacturing method
KR100841343B1 (en) * 2007-02-13 2008-06-26 세메스 주식회사 Substrate treatment apparatus
KR20090058774A (en) * 2007-12-05 2009-06-10 세메스 주식회사 Exhaust unit and method, and apparatus for treating substrate with the exhaust unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006030849A1 (en) * 2004-09-15 2006-03-23 Hitachi Kokusai Electric Inc. Semiconductor manufacturing equipment and semiconductor device manufacturing method
KR100841343B1 (en) * 2007-02-13 2008-06-26 세메스 주식회사 Substrate treatment apparatus
KR20090058774A (en) * 2007-12-05 2009-06-10 세메스 주식회사 Exhaust unit and method, and apparatus for treating substrate with the exhaust unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190022997A (en) * 2017-08-25 2019-03-07 세메스 주식회사 Method and Apparatus for treating substrate

Also Published As

Publication number Publication date
KR102041319B1 (en) 2019-11-06

Similar Documents

Publication Publication Date Title
US7403260B2 (en) Coating and developing system
KR102359530B1 (en) Method and Apparatus for treating substrate, and Method for cleaning cup
KR20180000928A (en) unit for treating substrate and bake apparatus a having the unit and method processing substrate by using thereof
KR20160117835A (en) Method and Apparatus for treating substrate
KR102315667B1 (en) Method and Apparatus for treating substrate
KR20170070610A (en) Apparatus and Method for treating substrate
KR102415320B1 (en) Unit for supporting substrate, Apparatus for treating substrate, and Method for treating substrate
KR102175074B1 (en) Apparatus and Method for treating substrate
KR20210003975A (en) Nozzle Apparatus, Apparatus and method for treating substrate
KR102041319B1 (en) Unit for controling exhaust, apparatus and method for treating substrate using the same
KR102000023B1 (en) Substrate treating apparatus
KR102121241B1 (en) Apparatus for treating substrate
KR20190042854A (en) Apparatus and Method for treating substrate
KR20190016748A (en) Apparatus and Method for treating substrate
KR102277542B1 (en) Apparatus for treating substrate
KR101582569B1 (en) Substrate treating apparatus, substrate treating facility including the apparatus, and substrate treating method using the apparatus
KR101768518B1 (en) Transfer chamber, Apparatus for treating substrate, and method for trasnferring substrate
KR102010261B1 (en) Apparatus and Method for treating a substrate
KR101914482B1 (en) Substrate treating apparatus and substrate treating method
KR20160134926A (en) Method for applying a liquid and apparatus for treating a substrate
KR102534608B1 (en) Apparatus for treating substrate and Exhaust method
KR101776018B1 (en) Method for heating a substrate and Apparatus for treating a substrate
KR102156897B1 (en) Apparatus and Method for treating substrate
KR101910800B1 (en) Apparatus for treating a substrate
KR102223764B1 (en) Apparatus and Method for treating substrate

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant