KR101776018B1 - Method for heating a substrate and Apparatus for treating a substrate - Google Patents

Method for heating a substrate and Apparatus for treating a substrate Download PDF

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Publication number
KR101776018B1
KR101776018B1 KR1020150146869A KR20150146869A KR101776018B1 KR 101776018 B1 KR101776018 B1 KR 101776018B1 KR 1020150146869 A KR1020150146869 A KR 1020150146869A KR 20150146869 A KR20150146869 A KR 20150146869A KR 101776018 B1 KR101776018 B1 KR 101776018B1
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KR
South Korea
Prior art keywords
substrate
chamber
heating
heating plate
upper chamber
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KR1020150146869A
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Korean (ko)
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KR20170046474A (en
Inventor
이기승
이정열
이민규
Original Assignee
세메스 주식회사
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Priority to KR1020150146869A priority Critical patent/KR101776018B1/en
Publication of KR20170046474A publication Critical patent/KR20170046474A/en
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Publication of KR101776018B1 publication Critical patent/KR101776018B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Abstract

The present invention relates to a method of heating a substrate and a substrate processing apparatus. According to an embodiment of the present invention, a substrate heating method is a method in which a substrate is supported by a lift pin in a state where an upper chamber and a lower chamber are in contact with each other and a processing space defined by the upper chamber and the lower chamber is closed to the outside, A process preparation step provided to be spaced apart from the upper part of the plate and a movement in the up-down direction of the upper chamber or the lower chamber, the processing space is provided to be opened for a predetermined time with respect to the outside, and the lift pin is lowered, A second process step in which the process space is closed with respect to the outside by moving the upper chamber or the lower chamber in the vertical direction while the substrate is placed on the heating plate, And heating the substrate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate heating method,

The present invention relates to a method of heating a substrate and a substrate processing apparatus including the same.

In general, various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed to manufacture semiconductor devices. The photolithography process performed to form the pattern plays an important role in achieving the high integration of the semiconductor device.

The photolithography process is performed to form a photoresist pattern on a semiconductor substrate made of silicon. The photolithography process includes a coating and a soft bake process for forming a photoresist film on a substrate, an exposure and development process for forming a photoresist pattern from the photoresist film, an edge bead removal for removing edge portions of the photoresist film or pattern, an edge bead removal (EBR) process, an edge exposure (EEW) process, a hard bake process for stabilizing and densifying a photoresist pattern, and the like.

The baking step is a step of heating the substrate. However, during the baking process, the substrate may not be uniformly heated during the process of heating the substrate inside the chamber and venting the chamber, thereby lowering the efficiency of the baking process have.

The present invention is to provide a substrate heating method and a substrate processing apparatus for improving the efficiency in the baking process.

The present invention also provides a substrate heating method for providing a coating liquid on a substrate at a uniform thickness, and a substrate processing apparatus including the same.

The present invention is not limited thereto, and other objects not mentioned may be clearly understood by those skilled in the art from the following description.

The present invention provides a method of heating a substrate.

According to an embodiment of the present invention, the substrate heating method is a method in which the upper chamber and the lower chamber are in contact with each other and the substrate is supported by the lift pins in a state where the processing space defined by the upper chamber and the lower chamber is closed with respect to the outside Wherein the processing space is provided to be opened to a predetermined time with respect to the outside by moving in the vertical direction of the upper chamber or the lower chamber, and the lift pin is lowered, A second process in which the process space is closed with respect to the outside by moving in the up-down direction of the upper chamber or the lower chamber while the substrate is placed on the heating plate, Step < / RTI >

According to an embodiment, the process space may be evacuated during the first process step.

According to an embodiment, the process space may be evacuated while the second process step is performed.

According to one embodiment, exhaust in the process space may be through the central region of the upper chamber.

According to one embodiment, the heating plate may be provided in the lower chamber.

The present invention provides an apparatus for processing a substrate.

According to an embodiment of the present invention, the substrate processing apparatus includes a process chamber having an upper chamber and a lower chamber in contact with each other and having a processing space defined by the upper chamber and the lower chamber, A lift pin for lowering the substrate on the heating plate and the heating plate, a lift pin for moving the substrate placed on the heating plate to move away from the heating plate, and a lower plate connected to the upper chamber or the lower chamber, And a controller for controlling the driving member and the lift pin, wherein the controller controls the substrate to be supported by the lift pins so as to be spaced apart from the upper portion of the heating plate in a state where the processing space is closed with respect to the outside And the upper chamber or the upper chamber A first processing step in which the processing space is provided with a set time open to the outside by moving the lower chamber in a vertical direction and the lift pin is lowered so that the substrate is placed on the heating plate; The driving member and the lift pin can be controlled to perform a second process step in which the processing space is closed with respect to the outside by moving in the vertical direction of the upper chamber or the lower chamber while the state is maintained.

According to an embodiment, the substrate processing apparatus may further include an exhaust member connected to a central region of the upper chamber and exhausting the processing space.

According to one embodiment, the controller further controls the exhaust member, and the controller can control the exhaust member to exhaust the processing space during the first processing step.

According to an embodiment, the controller can control the exhaust member to exhaust the processing space during the second process step.

According to one embodiment, the lift pin may be provided so as to be movable up and down in a pin hole formed in the heating plate.

According to an embodiment of the present invention, the chamber may be opened during the step of heating the substrate, thereby improving the efficiency of the substrate heating process.

In addition, according to an embodiment of the present invention, the chamber may be opened during the step of heating the substrate, so that the thickness of the coating liquid on the substrate may be made uniform for each region of the substrate.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.

1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a view of the substrate processing apparatus 1 of Fig. 1 viewed from the direction AA.
FIG. 3 is a view of the substrate processing apparatus 1 of FIG. 1 viewed from the BB direction.
4 is a perspective view showing a bake unit according to an embodiment of the present invention.
5 is a plan view showing the bake unit of Fig.
6 is a cross-sectional view of the bake unit of Fig.
Fig. 7 is a cross-sectional view showing part of the bake unit of Fig. 4;
FIG. 8 is a flowchart sequentially showing a substrate heating method according to an embodiment of the present invention.
FIGS. 9 to 11 are views sequentially illustrating a method for heating a blanket according to an embodiment of the present invention.
12 is a graph schematically showing the thickness of the treatment liquid for each region of the substrate in a general substrate heating process.
13 is a graph schematically showing the thickness of a treatment liquid for each region of a substrate in a substrate heating method according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

The facility of this embodiment is used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the facilities of this embodiment are used to perform a coating process and a developing process on a substrate.

1 to 3 are views schematically showing a substrate processing apparatus 1 according to an embodiment of the present invention. 1 is a view showing the substrate processing apparatus 1 of FIG. 1 viewed from the direction AA, FIG. 3 is a view showing the substrate processing apparatus 1 of FIG. 1 as BB Fig.

1 to 3, the substrate processing apparatus 1 includes a load port 100, an index module 200, a buffer module 300, a coating and developing module 400, an interface module 700, Module 800. < / RTI > The load port 100, the index module 200, the buffer module 300, the application and development module 400, and the interface module 700 are sequentially arranged in one direction in one direction. The purge module 800 may be provided in the interface module 700. The fuzzy module 800 may be provided at various positions such as a position where the exposure device at the rear end of the interface module 700 is connected or a side of the interface module 700. [

Hereinafter, the direction in which the load port 100, the index module 200, the buffer module 300, the application and development module 400, and the interface module 700 are arranged is referred to as a first direction 12. A direction perpendicular to the first direction 12 is referred to as a second direction 14 and a direction perpendicular to the first direction 12 and the second direction 14 is referred to as a third direction 16, Quot;

The substrate W is moved in a state accommodated in the cassette 20. The cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door at the front can be used.

The load port 100 has a mounting table 120 on which the cassette 20 accommodating the substrates W is placed. A plurality of mounts 120 are provided, and the mounts 120 are arranged in a line along the second direction 14. In Fig. 1, four placement tables 120 are provided.

The index module 200 transfers the substrate W between the cassette 20 and the buffer module 300 placed on the table 120 of the load port 100. The index module 200 includes a frame 210, an index robot 220, and a guide rail 230. The frame 210 is provided in the form of a substantially rectangular parallelepiped. The frame 210 is disposed between the load port 100 and the buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed within the frame 210. The index robot 220 is a four-axis drive system in which the hand 221 directly handling the substrate W is movable and rotatable in the first direction 12, the second direction 14 and the third direction 16, This is a possible structure. The index robot 220 includes a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. The arm 222 is provided with a stretchable structure and a rotatable structure. The support base 223 is disposed along the third direction 16 in the longitudinal direction. The arm 222 is coupled to the support 223 to be movable along the support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rails 230 are provided so that their longitudinal direction is arranged along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Further, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

The buffer module 300 includes a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an inner rectangular parallelepiped and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed in the third direction 16 from below. The second buffer 330 and the cooling chamber 350 are located at a height corresponding to the coating module 401 of the coating and developing module 400 described later and the coating and developing module 400 at a height corresponding to the developing module 402. [ The first buffer robot 360 is spaced apart from the second buffer 330, the cooling chamber 350 and the first buffer 320 by a predetermined distance in the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of substrates W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed within the housing 331 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 332. The housing 331 includes a housing 331 and a first buffer robot 360. The housing 331 supports the index robot 220 and the first buffer robot 360 in a direction in which the index robot 220 is provided, 1 buffer robot 360 has an opening (not shown) in the direction in which it is provided. The first buffer 320 has a structure substantially similar to that of the second buffer 330. The housing 321 of the first buffer 320 has an opening in a direction in which the first buffer robot 360 is provided and a direction in which the application unit robot 432 located in the application module 401 is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to one example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The first buffer robot 360 transfers the substrate W between the first buffer 320 and the second buffer 330. The first buffer robot 360 includes a hand 361, an arm 362, and a support 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable configuration so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be linearly movable along the support 363 in the third direction 16. The support base 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support 363 may be provided longer in the upper or lower direction. The first buffer robot 360 may be provided such that the hand 361 is driven only in two directions along the second direction 14 and the third direction 16.

The cooling chamber 350 cools the substrate W, respectively. The cooling chamber 350 includes a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the substrate W is placed and a cooling means 353 for cooling the substrate W. [ As the cooling means 353, various methods such as cooling with cooling water and cooling using a thermoelectric element can be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly for positioning the substrate W on the cooling plate 352. The housing 351 is provided with the index robot 220 and the development module 402 so that the development robot can carry the substrate W to or from the cooling plate 352 in the direction in which the index robot 220 is provided, The robot has an opening in the direction provided. Further, the cooling chamber 350 may be provided with doors for opening and closing the above-described opening.

The application module 401 includes a process of applying a photosensitive liquid such as a photoresist to the substrate W and a heat treatment process such as heating and cooling for the substrate W before and after the resist application process. The application module 401 has a liquid processing chamber 410, a bake unit 500, and a transfer chamber 430. The liquid processing chamber 410, the bake unit 500, and the transfer chamber 430 are sequentially disposed along the second direction 14. The liquid processing chamber 410 may be provided with a resist application chamber 410 for performing a resist coating process on the substrate W. A plurality of resist coating chambers 410 are provided, and a plurality of resist coating chambers 410 are provided in the first direction 12 and the third direction 16, respectively. A plurality of bake units 500 are provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 430 is positioned in parallel with the first buffer 320 of the first buffer module 300 in the first direction 12. In the transfer chamber 430, the applicator robot 432 and the guide rail 433 are positioned. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 transfers the substrate W between the bake units 420, the resist application chambers 410 and the first buffer 320 of the first buffer module 300. The guide rails 433 are arranged so that their longitudinal directions are parallel to the first direction 12. The guide rails 433 guide the applying robot 432 to move linearly in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. The arm 435 is provided with a stretchable structure. The arm 435 allows the hand 434 to move in the horizontal direction. The support base 436 is disposed along the third direction 16 in its longitudinal direction. The arm 435 is linearly movable along the support 436 in the third direction 16. The arm 435 is coupled to a support 436. The support 436 is fixedly coupled to the pedestal 437. The pedestal 437 is movable along the guide rail 433. The pedestal 437 is coupled to the guide rail 433.

The resist application chambers 410 may all have the same structure. However, the types of the photoresist used in each of the resist coating chambers 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist coating chamber 410 applies a photoresist on the substrate W. [ The resist coating chamber 410 includes a housing 411, a support plate 412, and a nozzle 413. The housing 411 is provided in the form of a cup having an open top. The support plate 412 is placed in the housing 411 and supports the substrate W. [ The support plate 412 is rotatably provided. The nozzle 413 supplies the photoresist onto the substrate W placed on the support plate 412. The nozzle 413 has a circular tube shape and can supply photoresist to the center of the substrate W. [ Alternatively, the nozzle 413 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 413 may be provided as a slit. The resist coating chamber 410 may further be provided with a nozzle 414 for supplying a cleaning liquid. The cleaning liquid cleans the surface of the substrate W to which the photoresist is applied. As an example, the cleaning liquid may be supplied as deionized water.

Figs. 4 to 7 are views showing the bake unit. Fig. Referring to FIGS. 4 to 7, the bake unit 500 performs a bake process, which is a process of heating the substrate W. FIG. For example, the bake units 500 may include a prebake step of heating the substrate W to a predetermined temperature to remove organic matter and moisture on the surface of the substrate W before the photoresist is applied, A soft bake process is performed after coating the substrate W on the substrate W, and a cooling process for cooling the substrate W after each heating process is performed.

The bake unit 500 includes a housing 510, a transfer unit 520, a heating unit 550, a cooling unit 570, a process chamber 580, an exhaust member 560 560, and a controller 590 ).

The housing 510 provides an interior space. In the inner space, a baking process and a cooling process are performed. The housing 510 may be provided in a rectangular parallelepiped shape. The housing 510 includes a first sidewall 511, a second sidewall 513, a third sidewall 514, and a fourth sidewall 515.

The first side wall 511 is provided on one side of the housing 510. A second sidewall 513 is provided opposite the first sidewall 511. On the side wall of the housing 510, an entrance port 512 through which the substrate W enters and exits is formed. For example, the entrance 512 may be formed in the first sidewall 511. The entry port 512 provides a moving path for the substrate W so that the substrate W is transferred or transferred.

The third sidewall 514 is located between the first sidewall 511 and the second sidewall 513. The third sidewall 514 is provided perpendicular to the first sidewall 511 and the second sidewall 513. The length of the third sidewall 514 may be longer than the length of the first sidewall 513.

A fourth sidewall 515 is provided opposite the third sidewall 514. The fourth sidewall 515 is located between the first sidewall 511 and the second sidewall 513. The third sidewall 514 and the fourth sidewall 515 are provided in parallel with each other. The first sidewall 511, the second sidewall 513, the third sidewall 514, and the fourth sidewall 515 may be provided at the same height.

The transfer unit 520 transfers the substrate W. The transfer unit 520 transfers the substrate W to the heating unit 550 or the substrate W so as to transfer the processed substrate W to the outside of the transfer unit 520. The transfer unit 520 includes a support plate 521 A transfer arm 522, a support ring 523, and a driver 527. [

The substrate W is placed on the support plate 521. The support plate 521 is provided in a circular shape. The support plate 521 may be provided as a circular plate. The support plate 521 may be provided in the same size as the substrate W. [ A guide hole 525 is formed in the support plate 521. The guide hole 525 is a space for accommodating the lift pin 553. The guide hole 525 extends from the outside of the support plate 521 to the inside thereof. The guide hole 525 prevents interference or collision with the lift pin 553 when the support plate 521 is moved.

The transfer arm 522 is fixedly coupled to the support plate 521. The transfer arm 522 is provided between the support plate 521 and the driver 527. The transfer arm 522 may be provided as a plate.

The support ring 523 is provided around the support plate 521. The support ring 523 supports the edge of the support plate 521. The support ring 523 serves to support the substrate W such that the substrate W is placed in the correct position after the substrate W is placed on the support plate 521. [

The driver 527 allows the support plate 521 to be transported or transported. The driver 527 is provided to linearly move the support plate 521 or to drive the support plate 521 up and down. The driving unit 527 can move the support plate 521 between the entrance port 512 and the heating unit 550.

The cooling unit 570 serves to cool the substrate W after the heat treatment. The cooling unit 570 includes a cooling plate 571.

The cooling plate 571 is provided in a circular shape when viewed from above. The cooling plate 571 is provided in a cylindrical shape. The substrate is placed on top of the cooling plate 571. A lift pin 553 is provided inside the cooling plate 571 so that the substrate is placed on the cooling plate 571 or the substrate can be transferred to the transfer unit 520. A cooling passage through which the cooling fluid flows can be provided inside the cooling plate 571. Cooling water is supplied to the cooling passage to cool the substrate W.

The process chamber 580 has a process space 589 therein. The process chamber 580 is provided in a circular shape when viewed from above. In the processing space 589 of the process chamber 580, the substrate can be heated. The process chamber 580 includes an upper chamber 581 and a lower chamber 583.

The upper chamber 581 is provided in a cylindrical shape. The lower chamber 583 is contactable with the upper chamber 581 and is located at the lower portion of the upper chamber 581. The lower chamber 583 is provided in a cylindrical shape. The processing space 589 is an inner space formed by the upper chamber 581 and the upper chamber 581 being in contact with each other.

The driving member 585 is connected to the upper chamber 581 or the lower chamber 583 to drive the upper chamber 581 or the lower chamber 583 up and down. In this embodiment, the driving member 585 is connected to the upper chamber 581 as an example.

The drive member 585 includes a driver 587 and a support 586. The actuator 557 is fixedly coupled to the upper chamber 581 by a support 586. [ The actuator 587 moves the upper chamber 581 upward and downward when it is conveyed or conveyed to the heating unit 550 of the substrate W. [ The actuator 587 may open the process chamber 580 by lifting the upper chamber 581 when opening the process chamber 580 for a certain period of time during the substrate heating process. In one example, the actuator 587 may be provided as a cylinder actuator.

In the above example, the driving member 585 is connected to the upper chamber 581. However, the driving member 585 may be connected to the lower chamber 583. The driving member 585 may be connected to the upper chamber 581 and the lower chamber 583 to drive the upper chamber 581 or the lower chamber 583 up and down.

The heating unit 550 heats the substrate W to a set temperature. The heating unit 550 includes a heating plate 551, a heater 552, and a lift pin 553.

Inside the heating plate 551, a heating means for heating the substrate W is provided. The substrate W is placed on the heating plate 551. The heating plate 551 is provided in the shape of a cylinder. The heating plate 551 is located in the processing space 589. A pin hole 554 for receiving the lift pin 553 is formed on the upper portion of the heating plate 551.

A heater 552 is provided in the heating plate 551. The heater 552 heats the heating plate 551 to heat the substrate W. Alternatively, heating patterns may be provided on the heating plate 551 as heating means.

The pin hole 554 is provided for the moving path of the lift pin 553 when the lift pin 553 moves the substrate W up and down. A pin hole 554 is provided on the upper portion of the heating plate 551, and a plurality of pins can be provided.

The lift pins 553 and 554 are moved up and down by a lifting mechanism (not shown). The lift pins 553 and 554 can seat the substrate W on the heating plate 551. The lift pins 553 and 554 can raise and lower the substrate W to a position spaced apart from the heating plate 551 by a predetermined distance.

The exhaust member 560 exhausts the processing space 589 during the process of heating the substrate. The exhaust member 560 is coupled to the central region of the upper chamber 581. The exhaust member 560 exhausts the processing space 589 by providing exhaust pressure to the processing space 589. For example, the exhaust pressure may be provided by a pump (not shown) connected to the exhaust member 560 and the like.

The controller 590 controls the driving member 585 and the lift pin 553. [ The controller 590 controls the driving member 585 to close the processing space 589 after the substrate is transported from the outside. The controller 590 is connected to the process preparation step S100 and the upper chamber (not shown) in which the substrate is supported by the lift pins 553 with the processing space 589 being closed against the outside, 581) or by moving the lower chamber 583 in the vertical direction, the processing space 589 is provided with a predetermined time to open to the outside, and the lift pin 553 is lowered to place the substrate on the heating plate 551 The processing space S810 is closed by the movement of the upper chamber 581 or the lower chamber 583 in the vertical direction while the process step S110 and the substrate are kept on the heating plate 551, And controls the driving member 585 and the lift pin 553 to perform the second process step S120.

The developing module 402 includes a developing process for supplying a developing solution to obtain a pattern on the substrate W to remove a part of the photoresist and a heat treatment process such as heating and cooling performed on the substrate W before and after the developing process . The development module 402 has a liquid processing chamber 460, a bake unit 470, and a transfer chamber 480. [ The liquid processing chamber 460, the bake unit 500, and the transfer chamber 480 are sequentially disposed along the second direction 14. The liquid processing chamber 460 may be provided as a developing chamber. The development chamber 460 and the bake unit 500 are positioned apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing chambers 460 are provided, and a plurality of developing chambers 460 are provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 480 is positioned in parallel with the second buffer 330 of the first buffer module 300 in the first direction 12. In the transfer chamber 480, the developing robot 482 and the guide rail 483 are positioned. The delivery chamber 480 has a generally rectangular shape. The developing robot 482 transfers the substrate W between the bake units 470, the developing chambers 460 and the second buffer 330 of the first buffer module 300 and the cooling chamber 350 . The guide rail 483 is arranged such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing robot 482 to linearly move in the first direction 12. The developing sub-robot 482 has a hand 484, an arm 485, a supporting stand 486, and a pedestal 487. The hand 484 is fixed to the arm 485. The arm 485 is provided in a stretchable configuration to allow the hand 484 to move in a horizontal direction. The support 486 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 such that it is linearly movable along the support 486 in the third direction 16. The support table 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

The development chambers 460 all have the same structure. However, the types of developers used in the respective developing chambers 460 may be different from each other. The development chamber 460 removes a region of the photoresist on the substrate W where light is irradiated. At this time, the area of the protective film irradiated with the light is also removed. Depending on the type of selectively used photoresist, only the areas of the photoresist and protective film that are not irradiated with light can be removed.

The development chamber 460 has a housing 461, a support plate 462, and a nozzle 463. The housing 461 has a cup shape with an open top. The support plate 462 is located in the housing 461 and supports the substrate W. [ The support plate 462 is rotatably provided. The nozzle 463 supplies the developer onto the substrate W placed on the support plate 462. The nozzle 463 has a circular tube shape and can supply developer to the center of the substrate W. [ Alternatively, the nozzle 463 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 463 may be provided with a slit. Further, the developing chamber 460 may further be provided with a nozzle 464 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate W to which the developer is supplied.

The bake unit 500 provided in the development module 402 is provided substantially the same as the bake unit 500 described above.

As described above, in the application and development module 400, the application module 401 and the development module 402 are provided to be separated from each other. In addition, the application module 401 and the development module 402 may have the same chamber arrangement as viewed from above.

The interface module 700 transfers the substrate W. The interface module 700 includes a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located within the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and are stacked on each other. The first buffer 720 is disposed higher than the second buffer 730.

The interface robot 740 is spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 carries the substrate W between the first buffer 720, the second buffer 730 and the exposure apparatus 900.

The first buffer 720 temporarily stores the processed substrates W before they are transferred to the exposure apparatus 900. The second buffer 730 temporarily stores the processed substrates W in the exposure apparatus 900 before they are moved. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 722. The housing 721 is movable in the direction in which the interface robot 740 is provided and in the direction in which the interface robot 740 and preprocessing robot 632 transfer the substrate W to and from the support table 722, 632 are provided with openings in the direction in which they are provided. The second buffer 730 has a structure similar to that of the first buffer 720. The interface module may be provided with only buffers and robots as described above without providing a chamber to perform a predetermined process on the wafer.

Hereinafter, a substrate heating method (S10) according to an embodiment of the present invention will be described.

FIG. 8 is a flowchart sequentially illustrating a method for heating a substrate according to an embodiment of the present invention. FIGS. 9 to 11 are views sequentially illustrating a method for heating a substrate according to an embodiment of the present invention. 8 to 11, the substrate heating method S10 includes a process preparation step S100, a first process step S110 and a second process step S120.

The process preparation step (SlOO) is a step of preparing a process for heating the substrate. As shown in FIG. 9, in the process preparation step (S100), the upper chamber 581 and the lower chamber 583 are in contact with each other to maintain a closed state with respect to the outside in the defined processing space 589. The process preparation step S100 is provided such that the substrate is supported by the lift pins 553 and spaced to the upper portion of the heating plate 551 with the processing space 589 closed.

In the first process step (S110), the substrate is heated. 10, in the first process step S110, the processing space 589 is provided to the upper chamber 581 or the lower chamber 583 by the upward and downward movement to open the processing space 589 to the outside for a set time, And the substrate is placed on the heating plate 551. In the first idle step, exhaust is performed in the process space 589 by the exhaust member 560. The substrate is heated in the heating plate 551, and remains open for a predetermined period of time.

In the second process step S120, the substrate is kept in a state of being placed on the heating plate 551. [ In the second process step S120, as shown in FIG. 11, the processing space 589 is closed against the outside by moving the upper chamber 581 or the lower chamber 583 in the vertical direction. The heating of the substrate is continued while the processing space 589 is closed, and the substrate heating process is performed. In the second process step (S120), the exhaust space of the process space 589 is exhausted by the exhaust member 560.

After the substrate heating process is finished, the processing space 589 is opened and the substrate is subjected to a cooling process or returned to the outside by the transfer unit.

 FIG. 12 is a graph schematically showing the thickness of the treatment liquid for each region of the substrate during a general substrate heating process, and FIG. 13 is a graph showing the thickness of the treatment liquid for each region of the substrate in a substrate heating method according to an embodiment of the present invention. Graph.

Referring to FIGS. 12 and 13, when the process is performed by performing the evacuation process in the closed process space 589 during the process of heating the substrate, the center region C of the substrate and the edge region E) is not constant compared to other regions. If the thickness of the treatment liquid differs by the area (C, E) of the substrate, the efficiency of the baking process becomes inferior.

On the contrary, in the case of the substrate heating method of the present invention, when the substrate is heated by opening the processing space 589 for a predetermined time, the thickness of the processing solution is uniformly distributed in the entire regions C and E of the substrate as shown in FIG. . The thickness of the treatment liquid is uniform in each region (C, E) of the substrate, and the efficiency of the baking process is improved. This difference in thickness of the treatment liquid is caused by the fact that the flow of the airflow into the central region C at the time of evacuation opens the treatment region 589 for a predetermined time, The phenomenon in which the thickness is not constant is solved.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

500: bake unit 510: housing
520: transfer unit 550; Heating unit
551: Heating plate 580: Process chamber
581: upper chamber 583: lower chamber
585: driving member 560: exhaust member
590:

Claims (10)

A method of heating a substrate,
A process preparation step in which the upper chamber and the lower chamber are in contact with each other and the processing space defined by the upper chamber and the lower chamber is closed with respect to the outside so that the substrate is supported by the lift pins and spaced apart from the upper portion of the heating plate;
The processing space is provided with a predetermined time to the outside by moving in the vertical direction of the upper chamber or the lower chamber so that the thickness of the processing liquid in the entire region of the substrate is uniformly maintained, A first processing step in which a substrate is placed on the heating plate to heat the substrate, and the processing space is evacuated; And
Wherein the processing chamber is closed with respect to the outside by moving the upper chamber or the lower chamber in a vertical direction while the substrate is held on the heating plate and the substrate is heated, 2 < / RTI > process step.
delete delete The method according to claim 1,
And exhausting the processing space through a central region of the upper chamber.
The method according to claim 1,
Wherein the heating plate is provided in the lower chamber.
An apparatus for processing a substrate,
A process chamber in contact with the upper chamber and the lower chamber and having a processing space defined by the upper chamber and the lower chamber;
A heating plate located in the processing space and heating the substrate;
A lift pin for lowering the substrate on the heating plate or moving the substrate placed on the heating plate away from the heating plate;
A driving member connected to the upper chamber or the lower chamber to drive the upper chamber or the lower chamber up and down;
An exhaust member connected to a central region of the upper chamber to exhaust the processing space; And
And a controller for controlling the driving member, the lift pin, and the exhaust member,
The controller comprising a process preparation step in which the substrate is supported by a lift pin and spaced apart from the top of the heating plate in a state where the processing space is closed with respect to the outside and a process step in which the thickness of the processing solution is uniformly maintained in the entire area of the substrate, By moving in the vertical direction of the upper chamber or the lower chamber, the processing space is provided to be opened for a predetermined time with respect to the outside, and the lift pins are lowered so that the substrate is placed on the heating plate to heat the substrate, A first process step in which exhaust is performed in the space, and the processing space is closed with respect to the outside by moving the upper chamber or the lower chamber in the vertical direction while the substrate is held on the heating plate and the substrate is heated And a second process step of exhausting the processing space A substrate processing apparatus for controlling the drive member and the lift pins to perform.
delete delete delete The method according to claim 6,
Wherein the lift pins are provided so as to be movable up and down in pin holes formed in the heating plate.
KR1020150146869A 2015-10-21 2015-10-21 Method for heating a substrate and Apparatus for treating a substrate KR101776018B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11139184B2 (en) 2017-10-17 2021-10-05 Semes Co., Ltd. Method and apparatus for treating substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237155A (en) * 2000-02-21 2001-08-31 Tokyo Electron Ltd Heat treatment method and heat treatment device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237155A (en) * 2000-02-21 2001-08-31 Tokyo Electron Ltd Heat treatment method and heat treatment device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11139184B2 (en) 2017-10-17 2021-10-05 Semes Co., Ltd. Method and apparatus for treating substrate

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