KR20140096384A - 액정 표시 장치 - Google Patents
액정 표시 장치 Download PDFInfo
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- KR20140096384A KR20140096384A KR1020147017251A KR20147017251A KR20140096384A KR 20140096384 A KR20140096384 A KR 20140096384A KR 1020147017251 A KR1020147017251 A KR 1020147017251A KR 20147017251 A KR20147017251 A KR 20147017251A KR 20140096384 A KR20140096384 A KR 20140096384A
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Images
Classifications
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/133528—Polarisers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G02F1/133531—Polarisers characterised by the arrangement of polariser or analyser axes
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/13398—Spacer materials; Spacer properties
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134381—Hybrid switching mode, i.e. for applying an electric field with components parallel and orthogonal to the substrates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/13793—Blue phases
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
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| JPJP-P-2011-258959 | 2011-11-28 | ||
| JP2011258959 | 2011-11-28 | ||
| PCT/JP2012/079872 WO2013080817A1 (en) | 2011-11-28 | 2012-11-09 | Liquid crystal display device |
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| KR20140096384A true KR20140096384A (ko) | 2014-08-05 |
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| US9116397B2 (en) * | 2011-11-23 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
| CN103959158B (zh) * | 2011-11-28 | 2017-08-01 | 株式会社半导体能源研究所 | 液晶显示装置 |
| JP2014206597A (ja) * | 2013-04-11 | 2014-10-30 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR102104926B1 (ko) * | 2013-10-25 | 2020-04-28 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
| CN104765207B (zh) * | 2015-01-20 | 2018-05-25 | 深圳市华星光电技术有限公司 | 像素结构及具有该像素结构的液晶显示器 |
| CN104714344A (zh) * | 2015-03-31 | 2015-06-17 | 合肥京东方光电科技有限公司 | 蓝相液晶显示装置及其制作方法 |
| CN104965357B (zh) | 2015-06-30 | 2019-08-30 | 武汉华星光电技术有限公司 | 蓝相液晶面板 |
| TWI547744B (zh) | 2015-11-11 | 2016-09-01 | 友達光電股份有限公司 | 畫素結構及顯示面板 |
| US10151953B2 (en) | 2017-02-22 | 2018-12-11 | A. U. Vista, Inc. | In-plane switching display having protrusion electrodes with metal enhanced adhesion |
| TWI608281B (zh) * | 2017-03-27 | 2017-12-11 | 友達光電股份有限公司 | 顯示面板 |
| CN107300817B (zh) * | 2017-08-17 | 2020-12-08 | 京东方科技集团股份有限公司 | 蓝相液晶显示面板及其制备方法、显示装置及其驱动方法 |
| CN107577093B (zh) * | 2017-09-20 | 2020-12-01 | 京东方科技集团股份有限公司 | 一种显示模组及光波导显示装置 |
| CN109541860A (zh) * | 2017-09-22 | 2019-03-29 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法和显示装置 |
| CN108594546A (zh) * | 2018-05-02 | 2018-09-28 | 四川大学 | 一种双盒厚透反蓝相液晶显示器 |
| CN109633998B (zh) * | 2019-01-16 | 2023-01-10 | 京东方科技集团股份有限公司 | 一种液晶器件 |
| CN112631027B (zh) * | 2020-12-30 | 2022-02-18 | 惠科股份有限公司 | 一种显示面板及其制作方法和显示装置 |
Family Cites Families (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09105953A (ja) | 1995-10-12 | 1997-04-22 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| US6449024B1 (en) | 1996-01-26 | 2002-09-10 | Semiconductor Energy Laboratory Co., Inc. | Liquid crystal electro-optical device utilizing a polymer with an anisotropic refractive index |
| JP3708620B2 (ja) | 1996-03-01 | 2005-10-19 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型液晶電気光学装置 |
| JPH09258242A (ja) | 1996-03-18 | 1997-10-03 | Sharp Corp | 液晶表示素子 |
| JP3226830B2 (ja) | 1997-03-31 | 2001-11-05 | 日本電気株式会社 | 液晶表示装置 |
| JP3565547B2 (ja) | 1998-07-31 | 2004-09-15 | シャープ株式会社 | カラー液晶表示装置およびその製造方法 |
| JP2000292791A (ja) | 1999-02-04 | 2000-10-20 | Sharp Corp | 液晶表示素子およびプラズマアドレス型液晶表示装置 |
| JP3334676B2 (ja) * | 1999-05-26 | 2002-10-15 | 松下電器産業株式会社 | 液晶表示装置 |
| TWI251697B (en) * | 1999-05-26 | 2006-03-21 | Matsushita Electric Industrial Co Ltd | Liquid crystal display element and producing method thereof |
| US7019457B2 (en) | 2000-08-03 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having both electrodes formed on the insulating layer |
| US7167226B2 (en) | 2000-11-02 | 2007-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having particular configuration of pixel electrodes |
| US6977704B2 (en) * | 2001-03-30 | 2005-12-20 | Fujitsu Display Technologies Corporation | Liquid crystal display |
| JP2003109773A (ja) | 2001-07-27 | 2003-04-11 | Semiconductor Energy Lab Co Ltd | 発光装置、半導体装置およびそれらの作製方法 |
| KR100820646B1 (ko) | 2001-09-05 | 2008-04-08 | 엘지.필립스 엘시디 주식회사 | 횡전계방식 액정표시장치용 어레이기판과 그 제조방법 |
| CN100409082C (zh) * | 2002-11-02 | 2008-08-06 | 默克专利股份有限公司 | 具有光各向同性相的光补偿的电光式光调制元件 |
| TWI256514B (en) | 2003-04-04 | 2006-06-11 | Innolux Display Corp | In-plane switching mode LCD |
| JP4082683B2 (ja) * | 2003-09-29 | 2008-04-30 | 株式会社 日立ディスプレイズ | 半透過型液晶表示装置 |
| ATE445860T1 (de) | 2003-11-27 | 2009-10-15 | Asahi Glass Co Ltd | Optisches element mit einem flüssigkristall mit optischer isotropie |
| KR100649039B1 (ko) | 2004-01-15 | 2006-11-27 | 샤프 가부시키가이샤 | 표시 소자 및 표시 장치, 및 표시 소자의 제조 방법 |
| JP4027941B2 (ja) * | 2004-01-16 | 2007-12-26 | シャープ株式会社 | 表示素子および表示装置 |
| KR100612921B1 (ko) * | 2004-03-17 | 2006-08-14 | 비오이 하이디스 테크놀로지 주식회사 | 에프에스이에스 모드 액정표시장치 |
| JP4766694B2 (ja) | 2004-03-19 | 2011-09-07 | 独立行政法人科学技術振興機構 | 液晶表示素子 |
| JP4246175B2 (ja) | 2004-04-27 | 2009-04-02 | シャープ株式会社 | 表示素子及び表示装置 |
| JP2005316331A (ja) | 2004-04-30 | 2005-11-10 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置 |
| US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP4476137B2 (ja) | 2005-02-28 | 2010-06-09 | セイコーエプソン株式会社 | 液晶装置および電子機器 |
| US8867005B2 (en) | 2005-06-10 | 2014-10-21 | Sharp Kabushiki Kaisha | Display element and display device |
| JP2007086205A (ja) | 2005-09-20 | 2007-04-05 | Sharp Corp | 表示パネルおよび表示装置 |
| EP1958019B1 (en) | 2005-12-05 | 2017-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| EP3229066A1 (en) | 2005-12-05 | 2017-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Transflective liquid crystal display with a horizontal electric field configuration |
| JP5216204B2 (ja) | 2006-10-31 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置及びその作製方法 |
| US8493658B2 (en) | 2007-07-06 | 2013-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Polarizer and display device including polarizer |
| CN101681065B (zh) * | 2007-08-10 | 2011-09-07 | 夏普株式会社 | 液晶面板、液晶显示装置和具备它的电视接收机 |
| JP5101268B2 (ja) * | 2007-12-25 | 2012-12-19 | スタンレー電気株式会社 | 液晶表示素子 |
| KR20090063761A (ko) | 2007-12-14 | 2009-06-18 | 삼성전자주식회사 | 표시 장치 |
| KR20090092939A (ko) | 2008-02-28 | 2009-09-02 | 삼성전자주식회사 | 표시 장치 및 그 제조 방법 |
| US8339556B2 (en) | 2008-03-03 | 2012-12-25 | Hitachi Displays, Ltd. | Electro-optical device and display device with interdigital electrode portions on at least first and second substrates which are non-overlapping in a direction normal to the substrates |
| KR101499242B1 (ko) * | 2008-08-29 | 2015-03-06 | 삼성디스플레이 주식회사 | 액정 표시 장치의 제조 방법 |
| US20100165280A1 (en) | 2008-12-25 | 2010-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| KR101719350B1 (ko) * | 2008-12-25 | 2017-03-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| TW201028777A (en) * | 2009-01-22 | 2010-08-01 | Au Optronics Corp | Liquid crystal display panel |
| US8395740B2 (en) | 2009-01-30 | 2013-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having blue phase liquid crystal and particular electrode arrangement |
| US20100231842A1 (en) | 2009-03-11 | 2010-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Liquid Crystal Display Device |
| JP5238571B2 (ja) | 2009-03-25 | 2013-07-17 | 株式会社東芝 | 液晶表示装置 |
| KR101662998B1 (ko) | 2009-03-26 | 2016-10-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 액정 표시 장치의 제작 방법 |
| JP2010262055A (ja) * | 2009-04-30 | 2010-11-18 | Sony Corp | 表示素子および表示装置 |
| US8654292B2 (en) * | 2009-05-29 | 2014-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
| KR101701420B1 (ko) | 2009-05-29 | 2017-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정표시장치 |
| JP2011027886A (ja) | 2009-07-23 | 2011-02-10 | Seiko Epson Corp | 液晶装置の製造方法、液晶装置、電子機器 |
| KR20110046130A (ko) | 2009-10-28 | 2011-05-04 | 삼성전자주식회사 | 액정 표시 패널 |
| US8355109B2 (en) * | 2009-11-24 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device comprising a liquid crystal material exhibiting a blue phase and a structure body projecting into the liquid crystal layer |
| WO2011065259A1 (en) * | 2009-11-27 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| KR101840623B1 (ko) * | 2009-12-04 | 2018-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이를 포함하는 전자 기기 |
| TWI420206B (zh) * | 2009-12-10 | 2013-12-21 | Au Optronics Corp | 電極結構、顯示面板及顯示器 |
| KR101291716B1 (ko) * | 2009-12-11 | 2013-07-31 | 엘지디스플레이 주식회사 | 높은 구동전압을 요구되는 액정 모드를 위한 액정표시장치 |
| KR20110077645A (ko) * | 2009-12-30 | 2011-07-07 | 엘지디스플레이 주식회사 | 횡전계형 액정표시장치용 어레이 기판 및 이의 제조 방법 |
| JP5015274B2 (ja) * | 2010-01-13 | 2012-08-29 | シャープ株式会社 | 表示パネルおよび表示装置 |
| CN101782702A (zh) * | 2010-02-04 | 2010-07-21 | 上海交通大学 | 降低蓝相液晶显示器驱动电压的装置 |
| JP5717350B2 (ja) * | 2010-03-05 | 2015-05-13 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| JP5744366B2 (ja) | 2010-04-12 | 2015-07-08 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US8854583B2 (en) * | 2010-04-12 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and liquid crystal display device |
| KR20140009346A (ko) | 2011-02-18 | 2014-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
| US9116397B2 (en) | 2011-11-23 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
| CN103959158B (zh) * | 2011-11-28 | 2017-08-01 | 株式会社半导体能源研究所 | 液晶显示装置 |
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2012
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- 2012-11-09 WO PCT/JP2012/079872 patent/WO2013080817A1/en not_active Ceased
- 2012-11-09 KR KR1020147017251A patent/KR20140096384A/ko not_active Ceased
- 2012-11-12 US US13/674,143 patent/US9122110B2/en not_active Expired - Fee Related
- 2012-11-16 TW TW101142883A patent/TWI585496B/zh active
- 2012-11-22 JP JP2012255895A patent/JP6076054B2/ja not_active Expired - Fee Related
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2015
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- 2017-09-07 JP JP2017171698A patent/JP6723962B2/ja not_active Expired - Fee Related
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2019
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| JP2024035241A (ja) | 2024-03-13 |
| JP6856719B2 (ja) | 2021-04-07 |
| JP6076054B2 (ja) | 2017-02-08 |
| WO2013080817A1 (en) | 2013-06-06 |
| CN103959158B (zh) | 2017-08-01 |
| US9703154B2 (en) | 2017-07-11 |
| JP7532627B2 (ja) | 2024-08-13 |
| JP2019215566A (ja) | 2019-12-19 |
| TW201329590A (zh) | 2013-07-16 |
| JP6723962B2 (ja) | 2020-07-15 |
| US20150346568A1 (en) | 2015-12-03 |
| JP2018022167A (ja) | 2018-02-08 |
| US9122110B2 (en) | 2015-09-01 |
| JP2023017878A (ja) | 2023-02-07 |
| JP6208903B2 (ja) | 2017-10-04 |
| JP7395694B2 (ja) | 2023-12-11 |
| US20130135563A1 (en) | 2013-05-30 |
| CN103959158A (zh) | 2014-07-30 |
| JP2021103320A (ja) | 2021-07-15 |
| JP2017083882A (ja) | 2017-05-18 |
| TWI585496B (zh) | 2017-06-01 |
| JP2013137529A (ja) | 2013-07-11 |
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