KR20140064965A - 유기 반도체 조성물 및 유기 트랜지스터 - Google Patents

유기 반도체 조성물 및 유기 트랜지스터 Download PDF

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Publication number
KR20140064965A
KR20140064965A KR1020147010080A KR20147010080A KR20140064965A KR 20140064965 A KR20140064965 A KR 20140064965A KR 1020147010080 A KR1020147010080 A KR 1020147010080A KR 20147010080 A KR20147010080 A KR 20147010080A KR 20140064965 A KR20140064965 A KR 20140064965A
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KR
South Korea
Prior art keywords
small molecule
group
organic semiconductor
optionally
formula
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Ceased
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KR1020147010080A
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English (en)
Korean (ko)
Inventor
제레미 버로우스
크리스토퍼 뉴섬
Original Assignee
캠브리지 디스플레이 테크놀로지 리미티드
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Application filed by 캠브리지 디스플레이 테크놀로지 리미티드 filed Critical 캠브리지 디스플레이 테크놀로지 리미티드
Publication of KR20140064965A publication Critical patent/KR20140064965A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
KR1020147010080A 2011-09-20 2012-09-12 유기 반도체 조성물 및 유기 트랜지스터 Ceased KR20140064965A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1116251.8A GB201116251D0 (en) 2011-09-20 2011-09-20 Organic semiconductor composition and organic transistor
GB1116251.8 2011-09-20
PCT/GB2012/000711 WO2013041822A1 (en) 2011-09-20 2012-09-12 Organic semiconductor composition and organic transistor

Publications (1)

Publication Number Publication Date
KR20140064965A true KR20140064965A (ko) 2014-05-28

Family

ID=44937575

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147010080A Ceased KR20140064965A (ko) 2011-09-20 2012-09-12 유기 반도체 조성물 및 유기 트랜지스터

Country Status (7)

Country Link
US (1) US9373795B2 (enExample)
JP (1) JP6247636B2 (enExample)
KR (1) KR20140064965A (enExample)
DE (1) DE112012003914T5 (enExample)
GB (2) GB201116251D0 (enExample)
TW (1) TWI573799B (enExample)
WO (1) WO2013041822A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11069863B2 (en) 2018-12-03 2021-07-20 Samsung Electronics Co., Ltd. Organic thin film and organic thin film transistor and electronic device
US11242357B2 (en) 2017-10-18 2022-02-08 Samsung Electronics Co., Ltd. Fused polycyclic heteroaromatic compound and organic thin film and electronic device

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* Cited by examiner, † Cited by third party
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GB201304613D0 (en) * 2013-03-14 2013-05-01 Cambridge Display Tech Ltd Blend
US10381583B2 (en) * 2013-12-05 2019-08-13 Xerox Corporation Electronic device
JP6240544B2 (ja) * 2014-03-28 2017-11-29 富士フイルム株式会社 有機半導体膜形成用組成物
EP2924754B1 (en) * 2014-03-28 2021-10-20 Novaled GmbH Method for producing an organic transistor and organic transistor
JP6497386B2 (ja) * 2014-04-21 2019-04-10 住友化学株式会社 組成物および高分子化合物、並びに、該組成物または該高分子化合物を含有する有機半導体素子
US9818946B2 (en) 2014-04-21 2017-11-14 Sumitomo Chemical Company, Limited Film and organic semiconductor device containing the film
WO2016009891A1 (ja) * 2014-07-18 2016-01-21 富士フイルム株式会社 有機半導体膜形成用組成物、及び、有機半導体素子の製造方法
EP3032599A1 (en) 2014-12-12 2016-06-15 Solvay SA Organic semiconductor composition
KR102378363B1 (ko) * 2014-12-31 2022-03-25 삼성디스플레이 주식회사 화합물 및 이를 포함하는 유기 발광 소자
GB2536426A (en) * 2015-03-13 2016-09-21 Cambridge Display Tech Ltd Polymer blends for a semiconducting layer of an organic electronic device
KR102480084B1 (ko) * 2015-07-07 2022-12-23 삼성디스플레이 주식회사 화합물 및 이를 포함하는 유기 발광 소자
WO2017187162A1 (en) * 2016-04-27 2017-11-02 Neudrive Limited Semiconducting compositions
TWI678798B (zh) * 2018-06-07 2019-12-01 國立成功大學 高感度有機光感測器及其製造方法
TWI739408B (zh) 2020-04-28 2021-09-11 天光材料科技股份有限公司 半導體混合材料及其應用
CN113571639B (zh) * 2020-04-28 2023-11-10 天光材料科技股份有限公司 半导体混合材料及其应用
CN117683044A (zh) * 2022-09-09 2024-03-12 中国科学院大学 一种非对称二芳基并三噻吩/硒吩小分子材料的制备方法及其应用

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1416069B1 (en) 2001-08-09 2010-10-27 Asahi Kasei Kabushiki Kaisha Organic semiconductor film and method for manufacture thereof
JP5089986B2 (ja) 2003-11-28 2012-12-05 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 有機半導体層およびその改善
CN1947276A (zh) * 2004-04-27 2007-04-11 皇家飞利浦电子股份有限公司 通过熔融技术制备有机半导体器件的方法
US7019328B2 (en) * 2004-06-08 2006-03-28 Palo Alto Research Center Incorporated Printed transistors
US20060159952A1 (en) * 2005-01-14 2006-07-20 Eastman Kodak Company Mixed anthracene derivative host materials
GB2449023B (en) 2006-01-21 2011-06-15 Merck Patent Gmbh Electronic short channel device comprising an organic semiconductor formulation
US7524373B2 (en) * 2006-01-30 2009-04-28 University Of Iowa Research Foundation Apparatus and semiconductor co-crystal
JP5499422B2 (ja) * 2006-06-28 2014-05-21 コニカミノルタ株式会社 有機半導体材料、有機半導体膜、有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法
GB2450382B (en) 2007-06-22 2009-09-09 Cambridge Display Tech Ltd Organic thin film transistors, organic light-emissive devices and organic light-emissive displays
JP5481850B2 (ja) 2008-01-23 2014-04-23 東ソー株式会社 ヘテロアセン誘導体、その前駆化合物及びそれらの製造方法
JP5428104B2 (ja) 2008-05-23 2014-02-26 日本化薬株式会社 有機半導体組成物
EP2452942A4 (en) 2009-07-10 2013-01-23 Sumitomo Chemical Co SUBSTITUTED BENZOCHALCOGENACEN COMPOUND, THIN LAYER WITH THE CONNECTION AND ORGANIC SEMICONDUCTOR COMPONENT WITH THE THIN LAYER
JP5641739B2 (ja) * 2010-01-22 2014-12-17 帝人株式会社 有機半導体膜形成用溶液、及び有機半導体デバイス

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11242357B2 (en) 2017-10-18 2022-02-08 Samsung Electronics Co., Ltd. Fused polycyclic heteroaromatic compound and organic thin film and electronic device
US11069863B2 (en) 2018-12-03 2021-07-20 Samsung Electronics Co., Ltd. Organic thin film and organic thin film transistor and electronic device

Also Published As

Publication number Publication date
DE112012003914T5 (de) 2014-07-17
TWI573799B (zh) 2017-03-11
GB2508555A (en) 2014-06-04
GB201116251D0 (en) 2011-11-02
WO2013041822A1 (en) 2013-03-28
US9373795B2 (en) 2016-06-21
JP6247636B2 (ja) 2017-12-13
TW201323428A (zh) 2013-06-16
JP2014533433A (ja) 2014-12-11
US20140225101A1 (en) 2014-08-14
GB201404349D0 (en) 2014-04-23

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