KR20140064401A - Composition for photoresist stripping solution and stripping method of photoresist using the same - Google Patents
Composition for photoresist stripping solution and stripping method of photoresist using the same Download PDFInfo
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- KR20140064401A KR20140064401A KR1020120131695A KR20120131695A KR20140064401A KR 20140064401 A KR20140064401 A KR 20140064401A KR 1020120131695 A KR1020120131695 A KR 1020120131695A KR 20120131695 A KR20120131695 A KR 20120131695A KR 20140064401 A KR20140064401 A KR 20140064401A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Detergent Compositions (AREA)
Abstract
Description
The present invention relates to a photoresist stripping liquid composition for removing photoresist, and more particularly, to a photoresist stripper composition for removing photoresist, which can minimize corrosion of metal wiring while achieving excellent stripping performance, The present invention relates to a detachment liquid composition for removing harmless eco-friendly photoresist and a method for peeling a photoresist.
Photolithography is an essential material used in photolithography processes, and these photolithography processes can be performed on an integrated circuit (IC), a large scale integration (LSI), a very large scale (VLSI), liquid crystal displays (LCDs), and image forming devices such as plasma display devices (PDPs), and the like.
After photo-lithography processing, the photoresist is removed at a high temperature by the remover solution, in which the metal film on the bottom can be corroded as the resist is removed. Accordingly, there is a need for a method capable of minimizing the corrosion of the underlying metal film while having excellent photoresist removal effect.
In addition, due to the tendency of the pattern to become finer recently, etching conditions of the metal and the oxide film become severe, so that the damage of the photoresist becomes large and the resist becomes deteriorated. For this reason, there is a demand for a composition having a strong peeling force so that residues are not present because the resist remains on the substrate even when treated with an organic solvent.
Conventional photoresist stripper liquid compositions for removing such photoresist are based on organic amines and organic solvents, or additionally contain corrosion inhibitors as additives.
Conventional stripper liquid compositions for removing photoresist include organic amines such as monoethanolamine, aprotic solvents such as NMP and DMSO, and / or protic solvents such as glycol ethers. However, the glycol ether-based protonic solvent used in the prior art photoresist stripper solution composition is highly toxic and causes damage to the brain and nerves, resulting in an environmental disease such as narcotic action, headache, atopic dermatitis, allergic rhinitis and asthma, It was harmful to the environment. It is necessary to develop an alternative solvent capable of achieving the same or higher peeling effect as the peeling liquid composition using conventional glycol ethers, while replacing the glycol ethers having these limitations.
An object of the present invention is to provide an environmentally friendly photoresist stripping liquid composition capable of minimizing corrosion of metal wiring while being excellent in peeling performance and being harmless to human body and environment.
The present invention also provides an eco-friendly photoresist stripping method capable of achieving excellent stripping performance.
The present invention provides a photoresist stripper solution for removing photoresist comprising 10 to 90% by weight of N, N-dimethylpropionamide, 5 to 80% by weight of Solketal, and 1 to 20% by weight of organic amine.
The present invention also provides a method for peeling a photoresist using the peeling liquid composition for removing the photoresist.
Hereinafter, a method of peeling off a photoresist and a method of peeling off a photoresist according to a specific embodiment of the present invention will be described in detail.
According to one embodiment of the invention, a photoresist stripper solution composition for removing photoresist comprising 10 to 90% by weight of N, N-dimethylpropionamide, 5 to 80% by weight of Solketal, and 1 to 20% Can be provided.
More preferably, the photoresist stripper solution for removing photoresist is a photoresist stripper for removal of photoresist comprising 15 to 75% by weight of N, N-dimethylpropionamide, 10 to 70% by weight of Solketal, and 1 to 15% Compositions may be provided.
DISCLOSURE OF THE INVENTION The present inventors have recognized the environment of the glycol ether solvents which play various roles in the conventional release liquid composition and the problems with the human body, dimethyl-1,3-dioxolan-4-yl) methanol] can minimize the corrosion of the metal wiring while realizing a peeling performance equal to or higher than that of a conventional release liquid composition, And it is harmless to the environment.
Solketal ((2,2-dimethyl-1,3-dioxolan-4-yl) methanol) is used as a specific solvent capable of replacing the protonic solvent of the glycol ether used in the prior art do.
The glycol ether protonic solvent which has been used before has a role of reducing the volatilization phenomenon in the resist removing process at high temperature and lowering the surface tension in the resist and the lower metal film layer to improve the resist removal efficiency, The etheric solvent evaporates easily and is absorbed well through respiration. Most of it is highly toxic, causing damage to the brain and nerves, causing limitations in causing environmental diseases such as narcotic action, headache, atopic dermatitis, allergic rhinitis and asthma.
On the other hand, the sol-ketal has a chemical structure including two alkyls, which can easily and effectively remove the photoresist, but does not generate harmful by-products or environmental pollutants. Accordingly, the release liquid composition including the sol-gel does not contain the glycol ether which is harmful to the environment and the human body, and is environment-friendly. Thus, the photoresist stripping effect can be improved and the corrosion of the metal wiring can be minimized.
The content of the solketal is preferably 5 to 80% by weight, more preferably 10 to 70% by weight, based on the total exfoliant composition. If the content of Solketal is less than 5% by weight, the solvent may be too low to be cleaned. If the content of Solketal is more than 80% by weight, the photoresist stripping force may be poor.
The organic amine includes both an aliphatic organic amine and a cyclic organic amine. The organic amine is a strong alkaline substance and penetrates strongly into the polymer matrix of the resist which has been modified or crosslinked under various process conditions such as dry or wet etching, ashing, or ion implantation process, thereby breaking the intramolecular or intermolecular attraction force . The action of such amines can easily remove the resist deposited on the substrate by forming an empty space in a structurally weak part in the resist remaining on the substrate and deforming the resist into amorphous polymer gel lumps.
The organic amine is preferably contained in an amount of 1 to 20% by weight, and more preferably 1 to 15% by weight based on the total exfoliant composition. If the content of the organic amines is less than 1 wt% based on the total exfoliant composition, there is a problem of deterioration of the photoresist peelability. If the content of the organic amines exceeds 20 wt%, the lower metal corrosion performance is lowered and the evaporation rate is increased.
As the aliphatic organic amine, a primary, secondary, or tertiary aliphatic amine may be used. Examples of the first class aliphatic amine include monoethanolamine (MEA), ethylenediamine, 2- (2-aminoethoxy) ethanol, 2- (2-aminoethylamino) ethanol and 1-amino- , And secondary aliphatic amines include diethanolamine, iminobispropylamine, 2-methylaminoethanol N-methylethanolamine, and the tertiary aliphatic amines include methyldiethanolamine, triethylaminoethanol, and the like .
Further, as the cyclic organic amine, there can be mentioned 1- (2-hydroxyethyl) piperazine (HEP), 1- (2- aminoethyl) piperazine, 1- Methylpiperazine, 1-amino-4-methylpiperazine, 1-benzylpiperazine, 1-phenylpiperazine, or a mixture thereof may be used .
The photoresist stripper solution composition preferably uses monoethanolamine (MEA), 1- (2-hydroxyethyl) piperazine (HEP), or a mixture thereof as the organic amine.
The photoresist stripper solution composition may contain, in addition to Solketal, another solvent such as N, N-Dimethyl Propionamide (DMPA). The N, N-dimethylpropionamide solvent may be a solvent such as N-methylformamide (NMF) or N-methyl-2-pyrrolidone (NMP) Is excellent in peeling effect, can give effects of environmental and human harm reduction, is excellent in rinsing power due to no PR precipitation problem in the rinsing process, and does not cause metal corrosion.
The N, N-dimethylpropionamide preferably contains 10 to 90% by weight, more preferably 15 to 75% by weight, of the detacking liquid composition for removing the photoresist. When the content of the N, N-dimethylpropionamide is less than 10% by weight based on the total exfoliant composition, there is a problem of deterioration of the photoresist removing performance. When the content of N, N-dimethylpropionamide is more than 90% by weight, .
The photoresist stripper composition may further contain aprotic polar solvent in addition to the above-described Solketal and N, N-dimethylpropionamide as a solvent. The aprotic polar solvent serves to dissolve the polymer gel lump separated by the amine compound finely at a unit molecular level. In particular, it is possible to prevent the phenomenon of poor resist reattachment caused mainly in the cleaning process.
Examples of the aprotic polar solvent include dimethylsulfoxide, N-methylformamide (NMF), N-methyl-2-pyrrolidone (NMP), N, N-dimethylacetamide, N, N-dimethylimidazole, gamma -butyrolactone, sulfolane, THFA (Tetrahydrofurfuryl alcohol), etc. These may be used alone or in combination of two or more, But is not limited thereto. As the aprotic polar solvent, it is preferable to use N-methylformamide (NMF), N-methyl-2-pyrrolidone (NMP) or a mixture thereof.
The content of the aprotic polar solvent is preferably 1 to 30% by weight based on the total exfoliant composition. If the content of the aprotic polar solvent is less than 1% by weight, there is a problem in resist removal performance. If the content of the aprotic polar solvent exceeds 30% by weight, there is a problem with corrosion of the metal wiring.
The removing solution composition for removing the photoresist may further contain ultrapure water. The ultrapure water can be used without limitation as ultra pure water known to be commonly used. Since the peeling liquid composition may be an aqueous or non-aqueous composition, it may be added with ultrapure water if necessary, and may be contained in an amount of 1 to 40% by weight based on the whole peeling liquid composition.
The release liquid composition may further contain 0.01 to 10% by weight of a corrosion inhibitor based on the whole release liquid composition, if necessary. Specific examples of the corrosion inhibitor include compounds of alkyl gallates having an alkyl group having 1 to 12 carbon atoms; Compounds of mercaptans such as mercaptobenzimidazole and mercaptomethylimidazole; Triazole compounds such as tolythriazole, benzotriazole, and carboxylic benzotriazole; Or a mixture thereof, but are not limited thereto.
In addition, the photoresist stripper composition for removing photoresist may further include other additives known to be commonly used for better peeling effect and corrosion prevention. Specific examples of the additives include Methyl gallate, pyrogallol, organic acids, saccharides, and the like. More specifically, examples of the organic acid include gallic acid, oxalic acid, malic acid and ascorbic acid, and sorbitol and the like can be used as the saccharide.
Further, the photoresist stripper liquid composition is not limited to the photoresist stripper but can be used in various applications in the paint or stripping industry.
On the other hand, according to another embodiment of the present invention, a method of peeling a photoresist using the photoresist stripper composition described above can be provided.
As described above, the inventors of the present invention have recognized the harmfulness of the glycol ether, which plays various roles in the conventional stripping liquid composition, to the human body and the environment, and studied materials that can replace the deterioration liquid composition, A photoresist peeling method using a peeling liquid composition which is excellent in peeling property and can prevent corrosion of a metal wiring has been completed.
The above photoresist stripping method is effective because it substitutes for glycol ethers and is eco-friendly, exhibits a photoresist stripping effect and a corrosion prevention effect equal to or more than conventional ones.
Specifically, the photoresist stripper composition may be used in a dip or spray method under a temperature condition of room temperature (25 ° C) or higher, and the photoresist can be stripped using an ultrasonic cleaning apparatus or the like.
According to the present invention, an environment known to be commonly used in existing photoresist stripping liquid compositions and a glycol ether harmful to human bodies are replaced, thereby being harmless to the human body and environment and having environment-friendly characteristics. A photoresist stripper liquid composition showing a photoresist stripping effect and a corrosion prevention effect at a level higher than that of the photoresist stripper liquid composition can be provided.
The invention will be described in more detail in the following examples. However, the following examples are illustrative of the present invention, and the present invention is not limited by the following examples.
[ Example And Comparative Example : Photoresist For removal Peeling liquid Preparation of composition]
The peeling liquid compositions for removing photoresist of Examples 1 to 5 and Comparative Examples 1 to 5 were prepared by the composition and content shown in Table 1 below (unit: wt%).
DMPA: N, N-Dimethyl Propionamide (N, N-dimethylpropionamide)
NMF: N-methylformamide < RTI ID = 0.0 >
NMP: N-methylpyrrolidone (N-methylpyrrolidone)
MDG: methyl diglycol (synonym: Diethylene Glycol Monomethyl Ether)
Solketal: (2,2-dimethyl-1,3-dioxolan-4-yl) methanol (Synonym: Isopropylidene glycerol)
MEA: Monoethanol amine
HEP: Hydroxyethyl piperazine (1- (2-Hydroxyethyl) piperazine)
[ Experimental Example : Peel force Measurement test]
In order to evaluate the performance of the release solution prepared in Examples 1 to 5 and Comparative Examples 1 to 5, the peeling test and the metal corrosion test were carried out in the next step.
1. Specimen Manufacturing ( Peel force Measurement Test Specimen)
The photoresist (DTFR-N200, manufactured by Dongjin Semichem Co., Ltd.), which is currently in use on the glass and SiNx front side, is coated with a spin or slip device to a thickness of 1 micrometer and cured at about 150 ° C using a hot plate or oven To prepare a specimen.
2. Peel force Measurement test
Each of the peeling solutions prepared in the above-mentioned Examples and Comparative Examples was put into the injection equipment and heated to 50 캜. Next, the peeling solution was sprayed on the prepared specimen for about 1 minute, followed by washing with ultrapure water and drying with nitrogen. The sample was visually observed and whether or not it was peeled off with a microscope was measured, and the results are shown in Table 2.
<Peel force measurement standard>
X: No photoresist stripping
?: Partial peeling of the photoresist does not melt
: Photoresist peeling was completed
The results of Table 2 show that the peeling liquid compositions for photoresist removal of Examples 1 to 5 can be used as solvents for glycol ethers as in Comparative Examples 1 to 5 without using glycol ether solvents which are harmful to humans and the environment It can be confirmed that the photoresist peeling effect is equivalent to or superior to that of the peeling liquid composition.
Claims (7)
From 5 to 80% by weight of Solketal; And
1 to 20% by weight of organic amine;
And removing the photoresist.
The organic amine may be selected from the group consisting of monoethanolamine (MEA), ethylenediamine, 2- (2-aminoethoxy) ethanol, 2- (2-aminoethylamino) ethanol 1-amino-2-propanol, diethanolamine, Amine, 2-methylaminoethanol N-methylethanolamine, triethylaminoethanol, 1- (2-hydroxyethyl) piperazine (HEP), 1- Methylpiperazine, 1-amino-4-methylpiperazine, 1-benzylpiperazine, and 1-phenyl (3-aminopropyl) Piperazine, and at least one compound selected from the group consisting of piperazine.
1. A peeling liquid composition for removing photoresist, which further comprises a non-protonic polar solvent in an amount of 1 to 30% by weight based on the total peeling liquid composition.
The aprotic polar solvent may be selected from the group consisting of dimethylsulfoxide, N-methylformamide (NMF), N-methyl-2-pyrrolidone (NMP), N, N-dimethylacetamide, N, , N-dimethylimidazole, gamma -butyrolactone, and sulfolane. ≪ / RTI >
Further comprising 1 to 40% by weight of ultrapure water based on the total exfoliant composition.
A detachment liquid composition for removing photoresist, which further comprises 0.01 to 10% by weight of a corrosion inhibitor based on the total exfoliation liquid composition.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120131695A KR101946379B1 (en) | 2012-11-20 | 2012-11-20 | Composition for photoresist stripping solution and stripping method of photoresist using the same |
| PCT/KR2013/009634 WO2014081127A1 (en) | 2012-11-20 | 2013-10-28 | Photoresist stripping fluid composition and method of stripping photoresist |
| CN201380058917.0A CN104781732B (en) | 2012-11-20 | 2013-10-28 | Photoresist stripping liquid composition and stripping method of photoresist |
| TW102139386A TWI617902B (en) | 2012-11-20 | 2013-10-30 | Composition for photoresist stripping solution and stripping method of photoresist using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120131695A KR101946379B1 (en) | 2012-11-20 | 2012-11-20 | Composition for photoresist stripping solution and stripping method of photoresist using the same |
Publications (2)
| Publication Number | Publication Date |
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| KR20140064401A true KR20140064401A (en) | 2014-05-28 |
| KR101946379B1 KR101946379B1 (en) | 2019-02-11 |
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| KR1020120131695A KR101946379B1 (en) | 2012-11-20 | 2012-11-20 | Composition for photoresist stripping solution and stripping method of photoresist using the same |
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| Country | Link |
|---|---|
| KR (1) | KR101946379B1 (en) |
| CN (1) | CN104781732B (en) |
| TW (1) | TWI617902B (en) |
| WO (1) | WO2014081127A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180035590A (en) * | 2016-09-29 | 2018-04-06 | 주식회사 엘지화학 | Composition for cleaning substrate of display device and preparing method of display device using the same |
| KR20220104767A (en) | 2019-11-20 | 2022-07-26 | 닛산 가가쿠 가부시키가이샤 | Detergent Compositions and Cleaning Methods |
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| KR102529951B1 (en) * | 2015-12-14 | 2023-05-08 | 삼성디스플레이 주식회사 | Composition for photoresist stripper and method of manufacturing thin film transistor array using the composition |
| KR20170107162A (en) * | 2016-03-15 | 2017-09-25 | 동우 화인켐 주식회사 | Resist stripper composition |
| JP6783926B2 (en) * | 2016-09-28 | 2020-11-11 | ダウ グローバル テクノロジーズ エルエルシー | Solvents used in the electronics industry |
| CN108424818A (en) * | 2017-02-14 | 2018-08-21 | 东友精细化工有限公司 | Cleaning masks liquid composition |
| CN107102517A (en) * | 2017-06-02 | 2017-08-29 | 合肥市惠科精密模具有限公司 | A kind of AMOLEED display screens remover composition with photoresist |
| CN109576722A (en) * | 2019-01-31 | 2019-04-05 | 深圳市华星光电技术有限公司 | Cleaning agent for copper |
| CN110846154A (en) * | 2019-08-30 | 2020-02-28 | 安徽富乐德科技发展有限公司 | Plate-attachment-preventing cleaning agent for OLED organic evaporation equipment and application |
| CN111142341A (en) * | 2019-12-31 | 2020-05-12 | 江苏中德电子材料科技有限公司 | Environment-friendly high-stability aqueous photoresist stripping liquid for panels and preparation method thereof |
| CN111458990A (en) * | 2020-02-12 | 2020-07-28 | 惠州达诚微电子材料有限公司 | Photoresist stripping liquid for copper process of advanced panel |
| CN115469516B (en) * | 2022-11-03 | 2023-03-24 | 江苏奥首材料科技有限公司 | Stripping agent for III-V semiconductor compound photoresist, preparation method and application thereof |
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| US4770713A (en) * | 1986-12-10 | 1988-09-13 | Advanced Chemical Technologies, Inc. | Stripping compositions containing an alkylamide and an alkanolamine and use thereof |
| KR100390567B1 (en) * | 2000-12-30 | 2003-07-07 | 주식회사 동진쎄미켐 | method of controlling photoresist stripping process and method of regenerating photoresist stripping composition using near infrared spectrometer |
| TWI276929B (en) * | 2003-12-16 | 2007-03-21 | Showa Denko Kk | Photosensitive composition remover |
| CN101223483B (en) * | 2005-07-19 | 2011-07-27 | 昭和电工株式会社 | Removing solution for photosensitive composition |
| KR20070114038A (en) * | 2006-05-26 | 2007-11-29 | 주식회사 엘지화학 | Stripper composition for photoresist |
| US20080096785A1 (en) * | 2006-10-19 | 2008-04-24 | Air Products And Chemicals, Inc. | Stripper Containing an Acetal or Ketal for Removing Post-Etched Photo-Resist, Etch Polymer and Residue |
| CN102301283B (en) * | 2009-02-03 | 2014-10-08 | 出光兴产株式会社 | Resist remover composition and resist removing method using the same |
| CN101866118A (en) * | 2009-04-16 | 2010-10-20 | 巴斯夫公司 | Organic photoresist remover composition |
| JP5691273B2 (en) | 2009-07-23 | 2015-04-01 | Jnc株式会社 | Liquid crystal alignment agent, liquid crystal alignment film, and liquid crystal display element |
| KR20110016418A (en) * | 2009-08-11 | 2011-02-17 | 동우 화인켐 주식회사 | Resist stripper composition and a method of stripping resist using the same |
| CN103365121B (en) * | 2012-03-29 | 2018-10-02 | 东友精细化工有限公司 | Resist stripping composition and the method for removing resist using the resist stripping composition |
-
2012
- 2012-11-20 KR KR1020120131695A patent/KR101946379B1/en active IP Right Grant
-
2013
- 2013-10-28 WO PCT/KR2013/009634 patent/WO2014081127A1/en active Application Filing
- 2013-10-28 CN CN201380058917.0A patent/CN104781732B/en active Active
- 2013-10-30 TW TW102139386A patent/TWI617902B/en active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180035590A (en) * | 2016-09-29 | 2018-04-06 | 주식회사 엘지화학 | Composition for cleaning substrate of display device and preparing method of display device using the same |
| KR20220104767A (en) | 2019-11-20 | 2022-07-26 | 닛산 가가쿠 가부시키가이샤 | Detergent Compositions and Cleaning Methods |
| US11732214B2 (en) | 2019-11-20 | 2023-08-22 | Nissan Chemical Corporation | Cleaning agent composition comprising an alkylamide solvent and a fluorine-containing quaternary ammonium salt |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101946379B1 (en) | 2019-02-11 |
| WO2014081127A1 (en) | 2014-05-30 |
| CN104781732B (en) | 2019-12-17 |
| CN104781732A (en) | 2015-07-15 |
| TW201432395A (en) | 2014-08-16 |
| TWI617902B (en) | 2018-03-11 |
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