CN107102517A - A kind of AMOLEED display screens remover composition with photoresist - Google Patents
A kind of AMOLEED display screens remover composition with photoresist Download PDFInfo
- Publication number
- CN107102517A CN107102517A CN201710409591.1A CN201710409591A CN107102517A CN 107102517 A CN107102517 A CN 107102517A CN 201710409591 A CN201710409591 A CN 201710409591A CN 107102517 A CN107102517 A CN 107102517A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- amoleed
- display screens
- composition
- remover composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Abstract
The invention discloses a kind of AMOLEED display screens remover composition with photoresist, the stripper is comprised the following raw materials by weight percent：Organosilicon compound 25 30%, acrylic acid esters co-polymer 26 32%, quaternary ammonium hydroxide 18 25%, surfactant 9 16%, complexing agent 5 8%, N, N dimethylpropionamides 11 14%, organic amine 9 14%, additive 5 10%, solvent 26 32%.The present invention is by N, and N dimethylpropionamides effectively raise peeling rate, prevents from influenceing the quality of end product in the graph layer to be formed because long duration of action causes residue to penetrate into, obtains more preferable peeling effect；Meanwhile, solvent not only has preferable dissolubility, while hydrophily is strong, adhering to again for photoresist can be avoided when with Wiring technology, it is to avoid photoetching glue residua；Surfactant adds organosilicon compound, and acrylic acid esters co-polymer is added as stress equilibrium agent, therefore improves the dissolubility and fissility to photoresist, solves the problems, such as the residual or osmosis pollution of photoresist.
Description
Technical field
The present invention relates to AMOLEED display screen technologies field, and in particular to a kind of AMOLEED display screens are peeled off with photoresist
Liquid composition.
Background technology
In the manufacturing process of liquid crystal display device and semiconductor element etc., needed for generally being formed using photoetching technique
Figure.
By taking the colored filter for manufacturing liquid crystal display device as an example, the process performed etching using photoresist is mainly included：
Utilize rotary coating (spin coating), slot coated (slit coating) or slit and rotary coating (slit＆spin
The method such as coating), on the glass substrate one layer of photoresist of even spread；Dry the photoresist having been coated with；Use mask plate pair
Aforesaid substrate exposes；The substrate exposed is subjected to development treatment to it using developer solution, removed by developing procedure not photosensitive
Partial photoresist, the figure needed for obtaining；Toasted in baking oven, so that evaporating completely falls the solvent inside photoresist, and it is hard
Gu photoresist film layer.
During the method coating photoresist such as above-mentioned utilization rotary coating, slot coated or slit and rotary coating, because
To use any one technique, photoresist is inevitably all coated on substrate edges or the back side, these unnecessary photoetching amine
Equipment pollution can be caused, so that the production cost of cleaning equipment is added, so many remaining lights must be removed stripper with photoresist
Photoresist.
Existing photoresist lift off liquid generally comprises organic amine compound, organic solvent and surfactant, wherein,
Organic amine compound can be diethylamine, ethylene glycol amine, isopropanolamine, alkylalkanolamines or MEA etc., organic solvent
Can be acetone, cyclohexanone, methyl acetate, glycol monoethyl ether or triethylene glycol etc., surfactant can be that acrylic acid is total to
Polymers etc..
But above-mentioned photoresist lift off liquid, in soaking and washing, the organic amine compound in composition easily decomposes and is in
Alkalescence, therefore the metals such as aluminium, copper are easily eroded, and because its fissility is poor, therefore photoetching glue residua can not be removed completely
Thing, longer when the time of dissolving photoresist, the probability that residue is penetrated into the graph layer to be formed is bigger, so as to easily make
Into the bad of liquid crystal display device or semiconductor element etc., the quality of final products is influenceed.
The content of the invention
The present invention is intended to provide a kind of AMOLEED display screens remover composition with photoresist.
The present invention provides following technical scheme：
A kind of AMOLEED display screens remover composition with photoresist, the stripper by following percentage by weight original
Material composition：Organosilicon compound 25-30%, acrylic acid esters co-polymer 26-32%, quaternary ammonium hydroxide 18-25%, table
Face activating agent 9-16%, complexing agent 5-8%, N, N- dimethylpropionamides 11-14%, organic amine 9-14%, additive 5-10%,
Solvent 26-32%.
The surfactant is sodium alkyl benzene sulfonate, sodium alkyl sulfate, pareth sulfate, aliphatic acid
Sodium, Alkyl ethoxy carboxylate acid sodium, the one or more of sodium alkyl sulfonate.
The solvent is selected from by dimethyl sulfoxide (DMSO), N-METHYLFORMAMIDE, METHYLPYRROLIDONE, N, N- dimethyl
In acetamide, N,N-dimethylformamide, N, the group of N- methylimidazoles, gamma-butyrolacton and sulfolane composition it is a kind of with
On.
The organic amine, which is included, to be selected from by MEA, ethylenediamine, 1- amino -2- propyl alcohol, diethanol amine, imino group dipropyl
Amine, 2- methylaminoethanols (2-hydroxyethyl)methylamine), triithylamine base ethanol, 1- (2- ethoxys) methyl piperazine, N- (3- aminopropyls)
One or more of morpholine, 2- methyl piperazines, 1- methyl piperazines, 1- amino -4- methyl piperazines, 1- benzyl diethylenediamines, group of composition
Compound.
The additive is selected from phytic acid, the alkali salt of amino acid, BTA, the nitrogen of 1- hydroxy benzos three
At least one of azoles, 3- hydroxy methyl -1,2,4- triazoles and dimercaptothiodiazole disodium salt.
The complexing agent is that diethylene triamine pentacetic acid (DTPA) presses 1 with Hedta:3 mass ratio mixing and
Into.
Compared with prior art, the beneficial effects of the invention are as follows：The present invention is by N, and N- dimethylpropionamides are effectively carried
High peeling rate, prevents from influenceing the matter of end product in the graph layer to be formed because long duration of action causes residue to penetrate into
Amount, obtains more preferable peeling effect；Meanwhile, solvent not only has preferable dissolubility, while hydrophily is strong, with Wiring technology
When can avoid adhering to again for photoresist, it is to avoid photoetching glue residua；Surfactant adds organosilicon compound, as
Stress equilibrium agent adds acrylic acid esters co-polymer, therefore improves the dissolubility and fissility to photoresist, solves light
The residual or osmosis pollution problem of photoresist.
Embodiment
Below in conjunction with the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described,
Obviously, described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based in the present invention
Embodiment, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made, all
Belong to the scope of protection of the invention.
A kind of AMOLEED display screens of embodiment 1 remover composition with photoresist, the stripper is by following weight percent
The raw material composition of ratio：Organosilicon compound 25%, acrylic acid esters co-polymer 26%, quaternary ammonium hydroxide 18%, surface
Activating agent 9%, complexing agent 5%, N, N- dimethylpropionamides 11%, organic amine 9%, additive 5%, solvent 26%.
The surfactant is sodium alkyl benzene sulfonate, sodium alkyl sulfate, pareth sulfate, aliphatic acid
Sodium, Alkyl ethoxy carboxylate acid sodium, the one or more of sodium alkyl sulfonate.
The solvent is selected from by dimethyl sulfoxide (DMSO), N-METHYLFORMAMIDE, METHYLPYRROLIDONE, N, N- dimethyl
In acetamide, N,N-dimethylformamide, N, the group of N- methylimidazoles, gamma-butyrolacton and sulfolane composition it is a kind of with
On.
The organic amine, which is included, to be selected from by MEA, ethylenediamine, 1- amino -2- propyl alcohol, diethanol amine, imino group dipropyl
Amine, 2- methylaminoethanols (2-hydroxyethyl)methylamine), triithylamine base ethanol, 1- (2- ethoxys) methyl piperazine, N- (3- aminopropyls)
One or more of morpholine, 2- methyl piperazines, 1- methyl piperazines, 1- amino -4- methyl piperazines, 1- benzyl diethylenediamines, group of composition
Compound.
The additive is selected from phytic acid, the alkali salt of amino acid, BTA, the nitrogen of 1- hydroxy benzos three
At least one of azoles, 3- hydroxy methyl -1,2,4- triazoles and dimercaptothiodiazole disodium salt.
The complexing agent is that diethylene triamine pentacetic acid (DTPA) presses 1 with Hedta:3 mass ratio mixing and
Into.
A kind of AMOLEED display screens of embodiment 2 remover composition with photoresist, the stripper is by following weight percent
The raw material composition of ratio：Organosilicon compound 30%, acrylic acid esters co-polymer 32%, quaternary ammonium hydroxide 25%, surface
Activating agent 16%, complexing agent 8%, N, N- dimethylpropionamides 14%, organic amine 14%, additive 10%, solvent 32%.
The surfactant is sodium alkyl benzene sulfonate, sodium alkyl sulfate, pareth sulfate, aliphatic acid
Sodium, Alkyl ethoxy carboxylate acid sodium, the one or more of sodium alkyl sulfonate.
The solvent is selected from by dimethyl sulfoxide (DMSO), N-METHYLFORMAMIDE, METHYLPYRROLIDONE, N, N- dimethyl
In acetamide, N,N-dimethylformamide, N, the group of N- methylimidazoles, gamma-butyrolacton and sulfolane composition it is a kind of with
On.
The organic amine, which is included, to be selected from by MEA, ethylenediamine, 1- amino -2- propyl alcohol, diethanol amine, imino group dipropyl
Amine, 2- methylaminoethanols (2-hydroxyethyl)methylamine), triithylamine base ethanol, 1- (2- ethoxys) methyl piperazine, N- (3- aminopropyls)
One or more of morpholine, 2- methyl piperazines, 1- methyl piperazines, 1- amino -4- methyl piperazines, 1- benzyl diethylenediamines, group of composition
Compound.
The additive is selected from phytic acid, the alkali salt of amino acid, BTA, the nitrogen of 1- hydroxy benzos three
At least one of azoles, 3- hydroxy methyl -1,2,4- triazoles and dimercaptothiodiazole disodium salt.
The complexing agent is that diethylene triamine pentacetic acid (DTPA) presses 1 with Hedta:3 mass ratio mixing and
Into.
A kind of AMOLEED display screens of embodiment 3 remover composition with photoresist, the stripper is by following weight percent
The raw material composition of ratio：Organosilicon compound 27%, acrylic acid esters co-polymer 29%, quaternary ammonium hydroxide 21%, surface
Activating agent 14%, complexing agent 7%, N, N- dimethylpropionamides 13%, organic amine 12%, additive 8%, solvent 28%.
The surfactant is sodium alkyl benzene sulfonate, sodium alkyl sulfate, pareth sulfate, aliphatic acid
Sodium, Alkyl ethoxy carboxylate acid sodium, the one or more of sodium alkyl sulfonate.
The solvent is selected from by dimethyl sulfoxide (DMSO), N-METHYLFORMAMIDE, METHYLPYRROLIDONE, N, N- dimethyl
In acetamide, N,N-dimethylformamide, N, the group of N- methylimidazoles, gamma-butyrolacton and sulfolane composition it is a kind of with
On.
The organic amine, which is included, to be selected from by MEA, ethylenediamine, 1- amino -2- propyl alcohol, diethanol amine, imino group dipropyl
Amine, 2- methylaminoethanols (2-hydroxyethyl)methylamine), triithylamine base ethanol, 1- (2- ethoxys) methyl piperazine, N- (3- aminopropyls)
One or more of morpholine, 2- methyl piperazines, 1- methyl piperazines, 1- amino -4- methyl piperazines, 1- benzyl diethylenediamines, group of composition
Compound.
The additive is selected from phytic acid, the alkali salt of amino acid, BTA, the nitrogen of 1- hydroxy benzos three
At least one of azoles, 3- hydroxy methyl -1,2,4- triazoles and dimercaptothiodiazole disodium salt.
The complexing agent is that diethylene triamine pentacetic acid (DTPA) presses 1 with Hedta:3 mass ratio mixing and
Into.
It is obvious to a person skilled in the art that the invention is not restricted to the details of the one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit is required rather than the explanation is limited, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Although not each moreover, it will be appreciated that the present specification is described in terms of embodiments
Embodiment is only comprising an independent technical scheme, and this narrating mode of specification is only this area for clarity
Technical staff should be using specification as an entirety, and the technical solutions in the various embodiments may also be suitably combined, forms this
Art personnel may be appreciated other embodiment.
Claims (6)
1. a kind of AMOLEED display screens remover composition with photoresist, it is characterised in that the stripper is by following weight hundred
Divide the raw material composition of ratio：Organosilicon compound 25-30%, acrylic acid esters co-polymer 26-32%, quaternary ammonium hydroxide
18-25%, surfactant 9-16%, complexing agent 5-8%, N, N- dimethylpropionamides 11-14%, organic amine 9-14%, add
Plus agent 5-10%, solvent 26-32%.
2. a kind of AMOLEED display screens according to claim 1 remover composition with photoresist, it is characterised in that：Institute
Surfactant is stated for sodium alkyl benzene sulfonate, sodium alkyl sulfate, pareth sulfate, sodium soap, alkyl polyoxy
Vinethene carboxylic acid sodium, the one or more of sodium alkyl sulfonate.
3. a kind of AMOLEED display screens according to claim 1 remover composition with photoresist, it is characterised in that：Institute
It is selected from by dimethyl sulfoxide (DMSO), N-METHYLFORMAMIDE, METHYLPYRROLIDONE, DMAC N,N' dimethyl acetamide, N, N- to state solvent
One or more of dimethylformamide, N, group of N- methylimidazoles, gamma-butyrolacton and sulfolane composition.
4. a kind of AMOLEED display screens according to claim 1 remover composition with photoresist, it is characterised in that：Institute
Organic amine is stated to include selected from by MEA, ethylenediamine, 1- amino -2- propyl alcohol, diethanol amine, imino-bis-propylamine, 2- first ammonia
Base ethanol (2-hydroxyethyl)methylamine), triithylamine base ethanol, 1- (2- ethoxys) methyl piperazine, N- (3- aminopropyls) morpholine, 2- first
One or more of base piperazine, 1- methyl piperazines, 1- amino -4- methyl piperazines, 1- benzyl diethylenediamines, the group of composition compound.
5. a kind of AMOLEED display screens according to claim 1 remover composition with photoresist, it is characterised in that：Institute
State additive and be selected from phytic acid, the alkali salt of amino acid, BTA, 1- hydroxy benzo triazoles, 3- hydroxyl first
At least one of ester -1,2,4- triazoles and dimercaptothiodiazole disodium salt.
6. a kind of AMOLEED display screens according to claim 1 remover composition with photoresist, it is characterised in that：Institute
It is diethylene triamine pentacetic acid (DTPA) and Hedta by 1 to state complexing agent:3 mass ratio is mixed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710409591.1A CN107102517A (en) | 2017-06-02 | 2017-06-02 | A kind of AMOLEED display screens remover composition with photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710409591.1A CN107102517A (en) | 2017-06-02 | 2017-06-02 | A kind of AMOLEED display screens remover composition with photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107102517A true CN107102517A (en) | 2017-08-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710409591.1A Pending CN107102517A (en) | 2017-06-02 | 2017-06-02 | A kind of AMOLEED display screens remover composition with photoresist |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112230520A (en) * | 2020-11-24 | 2021-01-15 | 合肥普庆新材料科技有限公司 | Water-based PI film stripping liquid and PI film glass method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102147576A (en) * | 2010-02-09 | 2011-08-10 | 京东方科技集团股份有限公司 | Photoresist stripping liquid composite |
| CN104317172A (en) * | 2014-09-30 | 2015-01-28 | 深圳新宙邦科技股份有限公司 | Stripper for stripping photoresist |
| CN104330959A (en) * | 2014-10-25 | 2015-02-04 | 江阴市化学试剂厂有限公司 | Preparation method of photoresist stripping liquid |
| CN104781732A (en) * | 2012-11-20 | 2015-07-15 | 东进世美肯株式会社 | Photoresist stripping fluid composition and method of stripping photoresist |
-
2017
- 2017-06-02 CN CN201710409591.1A patent/CN107102517A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102147576A (en) * | 2010-02-09 | 2011-08-10 | 京东方科技集团股份有限公司 | Photoresist stripping liquid composite |
| CN104781732A (en) * | 2012-11-20 | 2015-07-15 | 东进世美肯株式会社 | Photoresist stripping fluid composition and method of stripping photoresist |
| CN104317172A (en) * | 2014-09-30 | 2015-01-28 | 深圳新宙邦科技股份有限公司 | Stripper for stripping photoresist |
| CN104330959A (en) * | 2014-10-25 | 2015-02-04 | 江阴市化学试剂厂有限公司 | Preparation method of photoresist stripping liquid |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112230520A (en) * | 2020-11-24 | 2021-01-15 | 合肥普庆新材料科技有限公司 | Water-based PI film stripping liquid and PI film glass method thereof |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170829 |
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