CN107608181A - A kind of photoresist lift off stripper for TFT LCD displays - Google Patents
A kind of photoresist lift off stripper for TFT LCD displays Download PDFInfo
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- CN107608181A CN107608181A CN201710825424.5A CN201710825424A CN107608181A CN 107608181 A CN107608181 A CN 107608181A CN 201710825424 A CN201710825424 A CN 201710825424A CN 107608181 A CN107608181 A CN 107608181A
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- stripper
- tft
- photoresist lift
- lcd display
- display screens
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Abstract
The invention discloses a kind of photoresist lift off stripper for TFT LCD displays, it is characterised in that includes the raw material of following percentage by weight：Organic amine compound 15 18%, acrylic acid esters co-polymer 26 32%, surfactant 9 16%, complexing agent 5 8%, N, N dimethylpropionamides 6 9%, corrosion inhibitor 4 6%, organic solvent 60 75% and additive 0.2 10%.The present invention by least two organic amine compounds together, the mixed organic solvents formed using diethyl alcohols solvent and amide solvent are coordinated to use, effectively raise peeling rate, prevent from, because long duration of action causes residue to penetrate into the quality of influence end product in the graph layer to be formed, obtaining more preferable peeling effect.Meanwhile organic solvent of the invention not only has preferable dissolubility, while hydrophily is strong, and adhering to again for photoresist can be avoided when with Wiring technology, avoids photoetching glue residua.In addition, the additive in the stripper of the present invention, not only with good corrosion inhibition, effectively can prevent metal wiring from corroding.
Description
Technical field
The present invention relates to technical field, and in particular to a kind of photoresist lift off stripper for TFT-LCD display screens.
Background technology
In the manufacturing process of liquid crystal display device and semiconductor element etc., generally use photoetching technique forms required
Figure.
By taking the colored filter for manufacturing liquid crystal display device as an example, the process performed etching using photoresist is mainly included：
Utilize rotary coating (spin coating), slot coated (slit coating) or slit and rotary coating (slit＆spin
Coating) the methods of, on the glass substrate one layer of photoresist of even spread；Dry the photoresist having been coated with；Use mask plate pair
Aforesaid substrate exposes；The substrate exposed is subjected to development treatment to it using developer solution, removed by developing procedure not photosensitive
Partial photoresist, obtain required figure；Toasted in baking oven, so as to which evaporating completely falls the solvent inside photoresist, and it is hard
Gu photoresist film layer.
During above-mentioned the methods of utilizing rotary coating, slot coated or slit and rotary coating coating photoresist, because
To use any one technique, photoresist is inevitably all coated on substrate edges or the back side, these unnecessary photoetching amine
Equipment pollution can be caused, so as to add the production cost of cleaning equipment, so more remaining lights must be removed stripper with photoresist
Photoresist.
Existing photoresist lift off liquid generally comprises organic amine compound, organic solvent and surfactant, wherein,
Organic amine compound can be diethylamine, ethylene glycol amine, isopropanolamine, alkylalkanolamines or MEA etc., organic solvent
Can be acetone, cyclohexanone, methyl acetate, glycol monoethyl ether or triethylene glycol etc., surfactant can be that acrylic acid is total to
Polymers etc..
But above-mentioned photoresist lift off liquid, in soaking and washing, the organic amine compound in composition easily decomposes and is in
Alkalescence, therefore the metals such as aluminium, copper are easily eroded, and because its fissility is poor, therefore photoetching glue residua can not be removed completely
Thing, longer when the time of dissolving photoresist, the probability that residue is penetrated into the graph layer to be formed is bigger, so as to easily make
Into the bad of liquid crystal display device or semiconductor element etc., the quality of final products is influenceed.
The content of the invention
The present invention is intended to provide a kind of photoresist lift off stripper for TFT-LCD display screens.
The present invention provides following technical scheme：
A kind of photoresist lift off stripper for TFT-LCD display screens, include the raw material of following percentage by weight：It is organic
Amines 15-18%, acrylic acid esters co-polymer 26-32%, surfactant 9-16%, complexing agent 5-8%, N, N- diformazans
Base propionamide 6-9%, corrosion inhibitor 4-6%, organic solvent 60-75% and additive 0.2-10%.
The organic amine compound is selected from monoethanolamine, diethanol amine, triethanolamine, (2-hydroxyethyl)methylamine) and N- methyl two
At least two in monoethanolamine.
The organic solvent is mixed by diethylene glycol dimethyl ether and N-METHYLFORMAMIDE.
The additive is selected from phytic acid, the alkali salt of amino acid, BTA, the nitrogen of 1- hydroxy benzos three
At least one of azoles, 3- hydroxy methyl -1,2,4- triazoles and dimercaptothiodiazole disodium salt.
The surfactant is sodium alkyl benzene sulfonate, sodium alkyl sulfate, pareth sulfate, aliphatic acid
Sodium, Alkyl ethoxy carboxylate acid sodium, the one or more of sodium alkyl sulfonate.
The complexing agent is that diethylene triamine pentacetic acid (DTPA) presses 1 with Hedta:3 mass ratio mixes
Conjunction forms.
Compared with prior art, the beneficial effects of the invention are as follows：The present invention together, matches somebody with somebody at least two organic amine compounds
Close the mixed organic solvents formed using diethyl alcohols solvent and amide solvent to use, effectively raise peeling rate, prevent
Only because long duration of action causes residue to penetrate into the quality of influence end product in the graph layer to be formed, obtain preferably
Peeling effect.Meanwhile organic solvent of the invention not only has preferable dissolubility, while hydrophily is strong, when with Wiring technology
Adhering to again for photoresist can be avoided, avoids photoetching glue residua.In addition, the additive in the stripper of the present invention, not only has
There is good corrosion inhibition, effectively can prevent metal wiring from corroding.
Embodiment
Below in conjunction with the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described,
Obviously, described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Based in the present invention
Embodiment, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made, all
Belong to the scope of protection of the invention.
A kind of photoresist lift off stripper for TFT-LCD display screens of embodiment 1, include the original of following percentage by weight
Material：Organic amine compound 15%, acrylic acid esters co-polymer 26%, surfactant 9%, complexing agent 5%, N, N- dimethyl propylenes
Acid amides 6%, corrosion inhibitor 4%, organic solvent 60% and additive 0.2%.
The organic amine compound is selected from monoethanolamine, diethanol amine, triethanolamine, (2-hydroxyethyl)methylamine) and N- methyl two
At least two in monoethanolamine.
The organic solvent is mixed by diethylene glycol dimethyl ether and N-METHYLFORMAMIDE.
The additive is selected from phytic acid, the alkali salt of amino acid, BTA, the nitrogen of 1- hydroxy benzos three
At least one of azoles, 3- hydroxy methyl -1,2,4- triazoles and dimercaptothiodiazole disodium salt.
The surfactant is sodium alkyl benzene sulfonate, sodium alkyl sulfate, pareth sulfate, aliphatic acid
Sodium, Alkyl ethoxy carboxylate acid sodium, the one or more of sodium alkyl sulfonate.
The complexing agent is that diethylene triamine pentacetic acid (DTPA) presses 1 with Hedta:3 mass ratio mixes
Conjunction forms.
A kind of photoresist lift off stripper for TFT-LCD display screens of embodiment 2, include the original of following percentage by weight
Material：Organic amine compound 18%, acrylic acid esters co-polymer 32%, surfactant 16%, complexing agent 8%, N, N- dimethyl
Propionamide 9%, corrosion inhibitor 6%, organic solvent 75% and additive 10%.
The organic amine compound is selected from monoethanolamine, diethanol amine, triethanolamine, (2-hydroxyethyl)methylamine) and N- methyl two
At least two in monoethanolamine.
The organic solvent is mixed by diethylene glycol dimethyl ether and N-METHYLFORMAMIDE.
The additive is selected from phytic acid, the alkali salt of amino acid, BTA, the nitrogen of 1- hydroxy benzos three
At least one of azoles, 3- hydroxy methyl -1,2,4- triazoles and dimercaptothiodiazole disodium salt.
The surfactant is sodium alkyl benzene sulfonate, sodium alkyl sulfate, pareth sulfate, aliphatic acid
Sodium, Alkyl ethoxy carboxylate acid sodium, the one or more of sodium alkyl sulfonate.
The complexing agent is that diethylene triamine pentacetic acid (DTPA) presses 1 with Hedta:3 mass ratio mixes
Conjunction forms.
A kind of photoresist lift off stripper for TFT-LCD display screens of embodiment 3, include the original of following percentage by weight
Material：Organic amine compound 16%, acrylic acid esters co-polymer 30%, surfactant 11%, complexing agent 7%, N, N- dimethyl
Propionamide 8%, corrosion inhibitor 5%, organic solvent 66% and additive 3%.
The organic amine compound is selected from monoethanolamine, diethanol amine, triethanolamine, (2-hydroxyethyl)methylamine) and N- methyl two
At least two in monoethanolamine.
The organic solvent is mixed by diethylene glycol dimethyl ether and N-METHYLFORMAMIDE.
The additive is selected from phytic acid, the alkali salt of amino acid, BTA, the nitrogen of 1- hydroxy benzos three
At least one of azoles, 3- hydroxy methyl -1,2,4- triazoles and dimercaptothiodiazole disodium salt.
The surfactant is sodium alkyl benzene sulfonate, sodium alkyl sulfate, pareth sulfate, aliphatic acid
Sodium, Alkyl ethoxy carboxylate acid sodium, the one or more of sodium alkyl sulfonate.
The complexing agent is that diethylene triamine pentacetic acid (DTPA) presses 1 with Hedta:3 mass ratio mixes
Conjunction forms.
It is obvious to a person skilled in the art that the invention is not restricted to the details of the one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit requires rather than the explanation limits, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Moreover, it will be appreciated that although the present specification is described in terms of embodiments, not each
Embodiment only includes an independent technical scheme, and this narrating mode of specification is only this area for clarity
Technical staff should be using specification as an entirety, and the technical solutions in the various embodiments may also be suitably combined, forms this
The other embodiment that art personnel are appreciated that.
Claims (6)
1. a kind of photoresist lift off stripper for TFT-LCD display screens, it is characterised in that including following percentage by weight
Raw material：Organic amine compound 15-18%, acrylic acid esters co-polymer 26-32%, surfactant 9-16%, complexing agent 5-
8%th, N, N- dimethylpropionamide 6-9%, corrosion inhibitor 4-6%, organic solvent 60-75% and additive 0.2-10%.
A kind of 2. photoresist lift off stripper for TFT-LCD display screens according to claim 1, it is characterised in that：
The organic amine compound is in monoethanolamine, diethanol amine, triethanolamine, (2-hydroxyethyl)methylamine) and N methyldiethanol amine
At least two.
A kind of 3. photoresist lift off stripper for TFT-LCD display screens according to claim 1, it is characterised in that：
The organic solvent is mixed by diethylene glycol dimethyl ether and N-METHYLFORMAMIDE.
A kind of 4. photoresist lift off stripper for TFT-LCD display screens according to claim 1, it is characterised in that：
The additive is selected from phytic acid, the alkali salt of amino acid, BTA, 1- hydroxy benzo triazoles, 3- hydroxyls
At least one of methyl esters -1,2,4- triazoles and dimercaptothiodiazole disodium salt.
A kind of 5. photoresist lift off stripper for TFT-LCD display screens according to claim 1, it is characterised in that：
The surfactant is sodium alkyl benzene sulfonate, sodium alkyl sulfate, pareth sulfate, sodium soap, alkyl gather
Oxygen vinethene carboxylic acid sodium, the one or more of sodium alkyl sulfonate.
A kind of 6. photoresist lift off stripper for TFT-LCD display screens according to claim 1, it is characterised in that：
The complexing agent is that diethylene triamine pentacetic acid (DTPA) presses 1 with Hedta:3 mass ratio mixes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710825424.5A CN107608181A (en) | 2017-09-14 | 2017-09-14 | A kind of photoresist lift off stripper for TFT LCD displays |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710825424.5A CN107608181A (en) | 2017-09-14 | 2017-09-14 | A kind of photoresist lift off stripper for TFT LCD displays |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107608181A true CN107608181A (en) | 2018-01-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710825424.5A Pending CN107608181A (en) | 2017-09-14 | 2017-09-14 | A kind of photoresist lift off stripper for TFT LCD displays |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111352315A (en) * | 2020-03-19 | 2020-06-30 | 厦门思美科新材料有限公司 | Aqueous stripping liquid for stripping photoresist |
| CN113820927A (en) * | 2021-09-23 | 2021-12-21 | 易安爱富(武汉)科技有限公司 | Positive photoresist stripping liquid composition |
-
2017
- 2017-09-14 CN CN201710825424.5A patent/CN107608181A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111352315A (en) * | 2020-03-19 | 2020-06-30 | 厦门思美科新材料有限公司 | Aqueous stripping liquid for stripping photoresist |
| CN113820927A (en) * | 2021-09-23 | 2021-12-21 | 易安爱富(武汉)科技有限公司 | Positive photoresist stripping liquid composition |
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Application publication date: 20180119 |