CN113820927A - Positive photoresist stripping liquid composition - Google Patents
Positive photoresist stripping liquid composition Download PDFInfo
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- CN113820927A CN113820927A CN202111114452.9A CN202111114452A CN113820927A CN 113820927 A CN113820927 A CN 113820927A CN 202111114452 A CN202111114452 A CN 202111114452A CN 113820927 A CN113820927 A CN 113820927A
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- positive photoresist
- stripping
- photoresist
- stripper composition
- ether
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 99
- 239000007788 liquid Substances 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000008139 complexing agent Substances 0.000 claims abstract description 12
- 230000007797 corrosion Effects 0.000 claims abstract description 11
- 238000005260 corrosion Methods 0.000 claims abstract description 11
- 239000003112 inhibitor Substances 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 9
- 230000000149 penetrating effect Effects 0.000 claims abstract description 8
- 150000001412 amines Chemical class 0.000 claims abstract description 7
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- 239000004094 surface-active agent Substances 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 claims description 10
- 229920001661 Chitosan Polymers 0.000 claims description 10
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 10
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 10
- 229940005574 sodium gluconate Drugs 0.000 claims description 10
- 235000012207 sodium gluconate Nutrition 0.000 claims description 10
- 239000000176 sodium gluconate Substances 0.000 claims description 10
- 239000004408 titanium dioxide Substances 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 8
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 8
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 claims description 8
- -1 alcohol amine Chemical class 0.000 claims description 8
- RJWLLQWLBMJCFD-UHFFFAOYSA-N 4-methylpiperazin-1-amine Chemical compound CN1CCN(N)CC1 RJWLLQWLBMJCFD-UHFFFAOYSA-N 0.000 claims description 7
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 7
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 7
- 239000003153 chemical reaction reagent Substances 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 150000002191 fatty alcohols Chemical class 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- OQJBFFCUFALWQL-UHFFFAOYSA-N n-(piperidine-1-carbonylimino)piperidine-1-carboxamide Chemical group C1CCCCN1C(=O)N=NC(=O)N1CCCCC1 OQJBFFCUFALWQL-UHFFFAOYSA-N 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- IQXXEPZFOOTTBA-UHFFFAOYSA-N 1-benzylpiperazine Chemical compound C=1C=CC=CC=1CN1CCNCC1 IQXXEPZFOOTTBA-UHFFFAOYSA-N 0.000 claims description 6
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 6
- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical compound O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 claims description 6
- 229940091173 hydantoin Drugs 0.000 claims description 6
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 6
- HQVFKSDWNYVAQD-UHFFFAOYSA-N n-hydroxyprop-2-enamide Chemical compound ONC(=O)C=C HQVFKSDWNYVAQD-UHFFFAOYSA-N 0.000 claims description 6
- HIDBROSJWZYGSZ-UHFFFAOYSA-N 1-phenylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC=C1 HIDBROSJWZYGSZ-UHFFFAOYSA-N 0.000 claims description 5
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 5
- 229920002385 Sodium hyaluronate Polymers 0.000 claims description 5
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 5
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 5
- 229940010747 sodium hyaluronate Drugs 0.000 claims description 5
- YWIVKILSMZOHHF-QJZPQSOGSA-N sodium;(2s,3s,4s,5r,6r)-6-[(2s,3r,4r,5s,6r)-3-acetamido-2-[(2s,3s,4r,5r,6r)-6-[(2r,3r,4r,5s,6r)-3-acetamido-2,5-dihydroxy-6-(hydroxymethyl)oxan-4-yl]oxy-2-carboxy-4,5-dihydroxyoxan-3-yl]oxy-5-hydroxy-6-(hydroxymethyl)oxan-4-yl]oxy-3,4,5-trihydroxyoxane-2- Chemical compound [Na+].CC(=O)N[C@H]1[C@H](O)O[C@H](CO)[C@@H](O)[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@H](O[C@H]2[C@@H]([C@@H](O[C@H]3[C@@H]([C@@H](O)[C@H](O)[C@H](O3)C(O)=O)O)[C@H](O)[C@@H](CO)O2)NC(C)=O)[C@@H](C(O)=O)O1 YWIVKILSMZOHHF-QJZPQSOGSA-N 0.000 claims description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 4
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002202 Polyethylene glycol Substances 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 229920001223 polyethylene glycol Polymers 0.000 claims description 4
- 229920000136 polysorbate Polymers 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 4
- 239000004711 α-olefin Substances 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- LNTHITQWFMADLM-UHFFFAOYSA-N anhydrous gallic acid Natural products OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 3
- 229940074391 gallic acid Drugs 0.000 claims description 3
- 235000004515 gallic acid Nutrition 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- 239000002357 osmotic agent Substances 0.000 claims 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 16
- 239000012044 organic layer Substances 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 11
- 238000001179 sorption measurement Methods 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 14
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 5
- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- GNBVPFITFYNRCN-UHFFFAOYSA-M sodium thioglycolate Chemical compound [Na+].[O-]C(=O)CS GNBVPFITFYNRCN-UHFFFAOYSA-M 0.000 description 4
- 229940046307 sodium thioglycolate Drugs 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- IIOADSXXVWNOSC-UHFFFAOYSA-N pentyl 3,4,5-trihydroxybenzoate Chemical compound CCCCCOC(=O)C1=CC(O)=C(O)C(O)=C1 IIOADSXXVWNOSC-UHFFFAOYSA-N 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 2
- RPWFJAMTCNSJKK-UHFFFAOYSA-N Dodecyl gallate Chemical compound CCCCCCCCCCCCOC(=O)C1=CC(O)=C(O)C(O)=C1 RPWFJAMTCNSJKK-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 235000010386 dodecyl gallate Nutrition 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 235000010388 propyl gallate Nutrition 0.000 description 2
- 229940075579 propyl gallate Drugs 0.000 description 2
- 239000000473 propyl gallate Substances 0.000 description 2
- 230000009103 reabsorption Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Abstract
The invention provides a positive photoresist stripping liquid composition, which comprises 5-8% of organic amine, 30-50% of organic solvent, 10-15% of corrosion inhibitor, 3-5% of complexing agent, 3-5% of surfactant, 1-5% of penetrating agent and the balance of water, wherein the weight percentage is 100%. The photoresist stripping solution has the advantages of low stripping temperature, short time, small etching on an organic layer, no re-adsorption of the stripped photoresist on a substrate, and good application prospect in the fields of semiconductor wafer cleaning and the like.
Description
Technical Field
The invention relates to the technical field of photoetching, in particular to a positive photoresist stripping liquid composition.
Background
The photoresist is also called as photoresist and mainly comprises three components of photosensitive resin, sensitizer and solvent. After the photosensitive resin is irradiated by light, the photocuring reaction can be quickly carried out in an exposure area, so that the physical properties, particularly the solubility, the affinity and the like of the material are obviously changed. The required fine pattern is transferred from the mask plate to a processed substrate through the processes of exposure, development, etching, diffusion, ion implantation, metal deposition and the like, and finally the residual photoresist of the unexposed part is cleaned by photoresist removing stripping liquid, so that the whole pattern transfer process is completed. In typical LED chip and semiconductor wafer manufacturing processes, a photoresist is required as a resist mask for pattern transfer, and the transfer process requires complete removal of the unwanted photoresist without etching any substrate.
When the existing photoresist stripping solution is used for stripping and removing the photoresist, although the photoresist can be removed, a small amount of photoresist is still adsorbed on the surface of a substrate in a dissolved state, and the photoresist can be quickly diluted in the subsequent water washing process, so that the photoresist is separated out and adhered to the surface of the substrate, and the quality is finally influenced. Therefore, in order to improve the yield, it is necessary to develop a stripping solution for preventing the re-adsorption of the photoresist.
Disclosure of Invention
In view of the above, the present invention provides a photoresist stripper that does not corrode an organic layer, has a good photoresist removing effect, and does not re-adsorb photoresist on a substrate surface.
The technical scheme of the invention is realized as follows: the invention provides a positive photoresist stripping liquid composition, which comprises 5-8% of organic amine, 30-50% of organic solvent, 10-15% of corrosion inhibitor, 3-5% of complexing agent and the balance of water, wherein the weight percentage is 100%; the complexing agent comprises sodium gluconate, titanium dioxide and chitosan.
On the basis of the above technical solution, preferably, the sodium gluconate: titanium dioxide: the weight ratio of the chitosan is (6-10) to (3-5) to (1-5).
On the basis of the technical scheme, preferably, the organic amine is one or a combination of two of alcohol amine and amide, and the alcohol amine is one or a combination of more of monoethanolamine, methyldiethanolamine and hydroxyethyl ethylenediamine; the amide is one or more of N-methyl pyrrolidone, N-methyl formamide, N-hydroxy acrylamide and N-phenyl maleimide.
On the basis of the technical scheme, preferably, the organic solvent is one or more of alcohol ether, piperazine and piperidine, and the alcohol ether is one or more of diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, ethylene glycol ethyl ether and ethylene glycol butyl ether; the piperazine is one or two of 1-amino-4-methylpiperazine and 1-benzylpiperazine; the piperidine is azodicarbonyl dipiperidine.
On the basis of the technical scheme, preferably, the corrosion inhibitor is one or a combination of more of gallic acid alkyl ester compounds, sulfydryl compounds, triazole compounds and hydantoin.
On the basis of the technical scheme, the cleaning agent preferably further comprises a surfactant, wherein the surfactant is one or a combination of more of alpha-olefin sulfonate, fatty alcohol polyoxyethylene ether sulfate, fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene ether and tween.
On the basis of the technical scheme, the water treatment agent further comprises a penetrating agent, wherein the penetrating agent is one or a combination of more of sodium hyaluronate, polyethylene glycol and an alkali-resistant penetrating agent OEP-70.
On the basis of the technical scheme, preferably, the composition comprises, by weight, 100% 5-8% of organic amine, 30-50% of an organic solvent, 10-15% of a corrosion inhibitor, 3-5% of a complexing agent, 3-5% of a surfactant, 1-5% of a penetrating agent and the balance of water.
On the basis of the above technical solution, preferably, the photoresist stripper is used by the following method:
s1, mixing the reagents in the stripping solution composition, stirring uniformly, and filtering for later use;
s2, adopting a spraying method or a dipping method to contact the semiconductor device with the photoresist with the positive photoresist stripping liquid composition to strip the photoresist;
and S3, repeatedly washing the semiconductor device for 3-5 times after stripping is finished, and finally drying the semiconductor device by using heated nitrogen.
On the basis of the above technical solution, preferably, in step S2, when the photoresist is stripped, the temperature of the stripping solution is 30 to 60 ℃, and the stripping time is 5 to 30 min; in step S3, the heating temperature of nitrogen is 40-70 ℃.
Compared with the prior art, the positive photoresist stripping liquid composition has the following beneficial effects:
(1) in the stripping solution composition, the sodium gluconate, the titanium dioxide and the chitosan have complexation, so that the dissolution and the decomposition of the photoresist can be accelerated, the separated photoresist is uniformly dispersed in the stripping solution, and the photoresist is prevented from being adsorbed on the substrate again.
(2) The photoresist stripping liquid can permeate into the photoresist, so that the photoresist can be stripped conveniently, and an organic layer cannot be excessively etched to cause stripping marks. The stripping solution has good water solubility and is easy to clean in later period.
(3) The photoresist stripping solution disclosed by the invention is low in reaction temperature and short in time, and can reduce evaporation of moisture and organic components and improve stripping speed and quality.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is an etch of an organic layer with a positive photoresist stripper composition of the invention;
FIG. 2 is a graph showing the effect of the composition of the positive photoresist stripper on the reabsorption of the photoresist solution;
FIG. 3 is a graph showing the stripping effect of the positive photoresist stripper composition of the present invention on a RE layer photoresist.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Example one
A positive photoresist stripping liquid composition comprises, by weight, 100% monoethanolamine, 1% hydroxyethyl ethylenediamine and 2% N-methylpyrrolidone; 10% of diethylene glycol monobutyl ether and 20% of 1-amino-4-methylpiperazine; 5% of propyl gallate and 5% of sodium thioglycolate; 1.8 percent of sodium gluconate, 0.9 percent of titanium dioxide, 0.3 percent of chitosan and the balance of water.
The use method of the positive photoresist stripping liquid is as follows:
s1, mixing the reagents in the stripping solution composition according to the weight percentage, stirring uniformly, and filtering for later use;
s2, heating the stripping liquid to 30 ℃, spraying the positive photoresist stripping liquid composition on the surface of the semiconductor device with the photoresist, and stripping the photoresist for 30 min;
s3, after stripping, washing the semiconductor device for 3 times; and finally, drying the semiconductor device by using heated nitrogen, wherein the heating temperature of the nitrogen is 40 ℃.
Example two
A positive photoresist stripping liquid composition comprises, by weight, 100% of methyl diethanolamine 3%, N-methyl formamide 3% and N-hydroxy acrylamide 2%; 10% of dipropylene glycol monomethyl ether, 20% of ethylene glycol butyl ether, 10% of 1-benzylpiperazine and 10% of azodicarbonyl dipiperidine; 5% of gallic acid lauryl alcohol ester, 5% of mercaptobenzothiazole and 5% of hydantoin; 2.5 percent of sodium gluconate, 1.25 percent of titanium dioxide, 1.25 percent of chitosan and the balance of water.
The use method of the positive photoresist stripping liquid is as follows:
s1, mixing the reagents in the stripping solution composition according to the weight percentage, stirring uniformly, and filtering for later use;
s2, heating the stripping solution to 60 ℃, then immersing the semiconductor device with the photoresist into the stripping solution, and stripping the photoresist for 5 min;
s3, after stripping, washing the semiconductor device for 5 times; and finally, drying the semiconductor device by using heated nitrogen, wherein the heating temperature of the nitrogen is 70 ℃.
EXAMPLE III
A positive photoresist stripping liquid composition comprises, by weight, 100%, hydroxyethyl ethylenediamine 1%, N-phenylmaleimide 2%, N-methylpyrrolidone 2%, N-hydroxyacrylamide 1%; 10% of diethylene glycol monobutyl ether, 10% of ethylene glycol butyl ether, 10% of 1-amino-4-methylpiperazine and 10% of azodicarbonyl dipiperidine; 3% of gallic acid amyl ester, 3% of mercaptobenzothiazole, 4% of 1, 2, 4-triazole and 2% of hydantoin; 1.86% of sodium gluconate, 1.1% of titanium dioxide and 1.1% of chitosan; 1% of alpha-olefin sulfonate and 2% of fatty alcohol polyoxyethylene ether sulfate salt; 0.5% of sodium hyaluronate serving as a penetrating agent and 700.5% of OEP (alkali-resistant penetrating agent); the balance being water.
The use method of the positive photoresist stripping liquid is as follows:
s1, mixing the reagents in the stripping solution composition according to the weight percentage, stirring uniformly, and filtering for later use;
s2, heating the stripping solution to 40 ℃, then immersing the semiconductor device with the photoresist into the stripping solution, and stripping the photoresist for 10 min;
s3, after stripping, washing the semiconductor device for 4 times; and finally, drying the semiconductor device by using heated nitrogen, wherein the heating temperature of the nitrogen is 50 ℃.
Example four
A positive photoresist stripping liquid composition comprises, by weight, 100%, 1% of methyl diethanolamine, 1% of hydroxyethyl ethylenediamine, 2% of N-methylpyrrolidone, 2% of N-methylformamide and 1% of N-phenylmaleimide; 6% of dipropylene glycol monomethyl ether, 8% of ethylene glycol ethyl ether, 10% of 1-amino-4-methylpiperazine, 6% of 1-benzylpiperazine and 6% of azodicarbonyl dipiperidine; 2% of lauryl gallate, 2% of amyl gallate, 3% of sodium thioglycolate, 3% of mercaptobenzothiazole and 2% of hydantoin; 1% of sodium gluconate, 1% of titanium dioxide and 1% of chitosan; 2% of alkylphenol polyoxyethylene ether and 202% of tween; 2% of sodium hyaluronate, 1% of polyethylene glycol and the balance of water.
The use method of the positive photoresist stripping liquid is as follows:
s1, mixing the reagents in the stripping solution composition according to the weight percentage, stirring uniformly, and filtering for later use;
s2, heating the stripping liquid to 50 ℃, spraying the positive photoresist stripping liquid composition on the surface of the semiconductor device with the photoresist, and stripping the photoresist for 20 min;
s3, after stripping, washing the semiconductor device for 5 times; and finally, drying the semiconductor device by using heated nitrogen, wherein the heating temperature of the nitrogen is 60 ℃.
EXAMPLE five
A positive photoresist stripping liquid composition comprises 0.5% of methyl diethanolamine, 0.5% of hydroxyethyl ethylenediamine, 2% of N-methyl pyrrolidone, 2% of N-methyl formamide, 1% of N-hydroxy acrylamide and 1% of N-phenyl maleimide by weight percentage of 100%; 5% of dipropylene glycol monomethyl ether, 9% of ethylene glycol ethyl ether, 6% of 1-amino-4-methylpiperazine, 10% of 1-benzylpiperazine and 10% of azodicarbonyl dipiperidine; 2% of lauryl gallate, 1% of amyl gallate, 2% of sodium thioglycolate, 2% of mercaptobenzothiazole, 3% of 1, 2, 4-triazole and 4% of hydantoin; 2% of sodium gluconate, 1% of titanium dioxide and 1% of chitosan; 1% of alpha-olefin sulfonate, 2% of fatty alcohol polyoxyethylene ether sulfate, 1% of fatty alcohol polyoxyethylene ether, 1% of alkylphenol polyoxyethylene ether and 201% of tween; 2% of sodium hyaluronate, 1% of polyethylene glycol, 1% of alkali-resistant penetrant OEP-702% and the balance of water.
The use method of the positive photoresist stripping liquid is as follows:
s1, mixing the reagents in the stripping solution composition according to the weight percentage, stirring uniformly, and filtering for later use;
s2, heating the stripping solution to 55 ℃, then immersing the semiconductor device with the photoresist into the stripping solution, and stripping the photoresist for 25 min;
s3, after stripping, washing the semiconductor device for 5 times; and finally, drying the semiconductor device by using heated nitrogen, wherein the heating temperature of the nitrogen is 55 ℃.
Comparative example 1
The first comparative example is an example I lacking the complexing agent, and specifically comprises the following steps:
a positive photoresist stripping liquid composition comprises, by weight, 100% monoethanolamine, 1% hydroxyethyl ethylenediamine and 2% N-methylpyrrolidone; 10% of diethylene glycol monobutyl ether and 20% of 1-amino-4-methylpiperazine; 5% of propyl gallate and 5% of sodium thioglycolate.
The positive photoresist stripper is used according to the first embodiment.
Comparative example No. two
The second comparative example is an example II lacking the corrosion inhibitor and the complexing agent, and specifically comprises the following steps:
a positive photoresist stripping liquid composition comprises, by weight, 100% of methyl diethanolamine 3%, N-methyl formamide 3% and N-hydroxy acrylamide 2%; 10% of dipropylene glycol monomethyl ether, 20% of ethylene glycol butyl ether, 10% of 1-benzylpiperazine and 10% of azodicarbonyl dipiperidine.
The method of using the positive photoresist stripper is as described in example two.
Experiment-organic layer damage experiment
The OLED substrate was immersed in the stripping solution at 60 ℃ and taken out every 15min, and the average of the loss film thickness of the organic layer was measured at 5 spots, and the results are shown in Table 1 and FIG. 1.
TABLE 1 etching of organic layers/nm by Photoresist stripper
| 15min | 30min | 45min | 60min | 90min | 120min | |
| Example one | 47 | 98 | 150 | 193 | 323 | 522 |
| Example two | 51 | 98 | 155 | 192 | 330 | 528 |
| EXAMPLE III | 49 | 92 | 148 | 187 | 321 | 520 |
| Example four | 43 | 91 | 142 | 183 | 317 | 512 |
| EXAMPLE five | 43 | 85 | 147 | 181 | 313 | 519 |
| Comparative example 1 | 313 | 562 | 775 | 1015 | ||
| Comparative example No. two | 659 | 870 | 1031 | 1344 |
As can be seen from Table 1, the dissolution rate of the comparative example to PLN was very high with the increase of the soaking time, and the PLN was substantially completely dissolved at 60 min. The dissolution of PLN in the example is slow, and only 180-190nm is dissolved in 60 min. FIG. 1 shows the etching of the organic layer under a metallographic microscope, and it can be seen from FIG. 1 that the stripping solution of example 1 has a low etching rate for the organic layer, and no significant etching is observed. Comparative example 1, without complexing agent added, showed significant etching at 60 min; comparative example 2, without the addition of corrosion inhibitor and complexing agent, showed significant etching at 30 min; comparative examples 1 and 2 etched severely at 90min, which severely affected the quality of the product. Therefore, the stripping solution of the invention can strip the photoresist and has no obvious etching to the organic layer.
Experiment two photo-etching liquid re-adsorption
A stripping solution containing a 6% concentration of a photoresist was prepared, a Mo substrate (the substrate surface did not contain a photoresist) was immersed in the stripping solution containing the photoresist at 60 ℃, and then the substrate (the substrate surface had a residual photoresist-containing stripping solution) was taken out and rinsed with pure water, and the adsorption of the photoresist on the substrate surface was observed, and the results are shown in fig. 2.
As can be seen from fig. 2, comparative examples 1 and 2, in which no complexing agent was added, had significant re-adsorption of the photoresist, and significant residue of the photoresist on the cleaned substrate; example 1 no re-adsorption of the photoresist was seen. Therefore, the stripping solution can prevent the photoresist from being adsorbed to the substrate again, and simultaneously has good water solubility and easy later-stage water washing.
Experiment three volatile amount experiment
100g of the stripping solutions of examples and comparative examples were poured into 250ml beakers, and the weights thereof were measured at 60 ℃ and 300rpm for 4 hours, 8 hours, 12 hours, and 24 hours, respectively, and the results are shown in Table 2.
TABLE 2 results of volatilization experiments/g
As can be seen from table 2, examples 1 to 4 can reduce evaporation of moisture and organic components, have stable composition, and simultaneously play a role in reducing etching of organic layers and improving yield; of these, examples 4 and 5 are the most effective.
Experimental four effects of stripping the photoresist on the RE layer
The OLED RE layer substrate is cured at 190 ℃ for 10min on a hot plate, and then stripped by a stripping machine at-60 ℃ and-0.3 MPa, wherein the stripping solution is the stripping solution of the embodiment and the comparative example, and the result is shown in figure 3.
As shown in FIG. 3, the stripping solution of example 5 can achieve stripping effect in 60s, and the stripping solution of comparative example can be stripped only in 5min, which shows that the stripping solution of the present invention can accelerate the dissolution and stripping of the photoresist, and significantly improve the stripping efficiency.
In conclusion, the positive photoresist stripping liquid composition can effectively remove the photoresist and residues thereof, basically has no corrosion to an organic layer, and does not cause the phenomenon of reabsorption of the photoresist after stripping. The method has good effects in stripping time, stripping effect and re-adsorption of the stripped photoresist, and has good application prospect in the fields of semiconductor wafer cleaning and the like.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A positive photoresist stripper composition, characterized in that: calculated according to 100 percent of weight percentage, the corrosion inhibitor comprises 5 to 8 percent of organic amine, 30 to 50 percent of organic solvent, 10 to 15 percent of corrosion inhibitor, 3 to 5 percent of complexing agent and the balance of water; the complexing agent comprises sodium gluconate, titanium dioxide and chitosan.
2. The positive photoresist stripper composition of claim 1, wherein: the sodium gluconate: titanium dioxide: the weight ratio of the chitosan is (6-10) to (3-5) to (1-5).
3. The positive photoresist stripper composition of claim 1, wherein: the organic amine is one or a combination of two of alcohol amine and amide, and the alcohol amine is one or a combination of more of monoethanolamine, methyldiethanolamine and hydroxyethyl ethylenediamine; the amide is one or more of N-methyl pyrrolidone, N-methyl formamide, N-hydroxy acrylamide and N-phenyl maleimide.
4. The positive photoresist stripper composition of claim 1, wherein: the organic solvent is one or more of alcohol ether, piperazine and piperidine, and the alcohol ether is one or more of diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, ethylene glycol ethyl ether and ethylene glycol butyl ether; the piperazine is one or two of 1-amino-4-methylpiperazine and 1-benzylpiperazine; the piperidine is azodicarbonyl dipiperidine.
5. The positive photoresist stripper composition of claim 1, wherein: the corrosion inhibitor is one or a combination of more of gallic acid alkyl ester compounds, sulfydryl compounds, triazole compounds and hydantoin.
6. The positive photoresist stripper composition of claim 1, wherein: the surfactant is one or a combination of more of alpha-olefin sulfonate, fatty alcohol polyoxyethylene ether sulfate, fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene and tween.
7. The positive photoresist stripper composition of claim 1, wherein: the gel also comprises an osmotic agent, wherein the osmotic agent is one or a combination of more of sodium hyaluronate, polyethylene glycol and alkali-resistant osmotic agent OEP-70.
8. A positive photoresist stripper composition according to any one of claims 1 to 7 wherein: the composition comprises, by weight, 100% of organic amine 5-8%, organic solvent 30-50%, corrosion inhibitor 10-15%, complexing agent 3-5%, surfactant 3-5%, penetrating agent 1-5%, and the balance of water.
9. A positive photoresist stripper composition according to any one of claims 1 to 7 wherein: the use method of the photoresist stripping liquid comprises the following steps:
s1, mixing the reagents in the stripping solution composition, stirring uniformly, and filtering for later use;
s2, adopting a spraying method or a dipping method to contact the semiconductor device with the photoresist with the positive photoresist stripping liquid composition to strip the photoresist;
and S3, repeatedly washing the semiconductor device for 3-5 times after stripping is finished, and finally drying the semiconductor device by using heated nitrogen.
10. The positive photoresist stripper composition of claim 9, wherein: in step S2, when the photoresist is stripped, the temperature of the stripping liquid is 30-60 ℃, and the stripping time is 5-30 min; in step S3, the heating temperature of nitrogen is 40-70 ℃.
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| CN117872693A (en) * | 2024-03-13 | 2024-04-12 | 深圳市松柏科工股份有限公司 | Positive photoresist stripping solution, preparation method and application thereof |
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