CN117872693A - Positive photoresist stripping solution, preparation method and application thereof - Google Patents
Positive photoresist stripping solution, preparation method and application thereof Download PDFInfo
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- CN117872693A CN117872693A CN202410285032.4A CN202410285032A CN117872693A CN 117872693 A CN117872693 A CN 117872693A CN 202410285032 A CN202410285032 A CN 202410285032A CN 117872693 A CN117872693 A CN 117872693A
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- positive photoresist
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 123
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 41
- 229920005989 resin Polymers 0.000 claims abstract description 35
- 239000011347 resin Substances 0.000 claims abstract description 35
- -1 amine compound Chemical class 0.000 claims abstract description 17
- 239000000654 additive Substances 0.000 claims abstract description 16
- 230000000996 additive effect Effects 0.000 claims abstract description 16
- QYMFNZIUDRQRSA-UHFFFAOYSA-N dimethyl butanedioate;dimethyl hexanedioate;dimethyl pentanedioate Chemical group COC(=O)CCC(=O)OC.COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC QYMFNZIUDRQRSA-UHFFFAOYSA-N 0.000 claims abstract description 15
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical group COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 claims abstract description 10
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims abstract description 6
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims abstract description 5
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 33
- 239000000080 wetting agent Substances 0.000 claims description 29
- 230000007797 corrosion Effects 0.000 claims description 27
- 238000005260 corrosion Methods 0.000 claims description 27
- 239000003112 inhibitor Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000002270 dispersing agent Substances 0.000 claims description 18
- 239000003513 alkali Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- QOHMWDJIBGVPIF-UHFFFAOYSA-N n',n'-diethylpropane-1,3-diamine Chemical compound CCN(CC)CCCN QOHMWDJIBGVPIF-UHFFFAOYSA-N 0.000 claims description 14
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 12
- ZIWRUEGECALFST-UHFFFAOYSA-M sodium 4-(4-dodecoxysulfonylphenoxy)benzenesulfonate Chemical compound [Na+].CCCCCCCCCCCCOS(=O)(=O)c1ccc(Oc2ccc(cc2)S([O-])(=O)=O)cc1 ZIWRUEGECALFST-UHFFFAOYSA-M 0.000 claims description 12
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 10
- ZBJVLWIYKOAYQH-UHFFFAOYSA-N naphthalen-2-yl 2-hydroxybenzoate Chemical compound OC1=CC=CC=C1C(=O)OC1=CC=C(C=CC=C2)C2=C1 ZBJVLWIYKOAYQH-UHFFFAOYSA-N 0.000 claims description 8
- 239000004094 surface-active agent Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 238000009736 wetting Methods 0.000 claims description 4
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 3
- UQFQONCQIQEYPJ-UHFFFAOYSA-N N-methylpyrazole Chemical compound CN1C=CC=N1 UQFQONCQIQEYPJ-UHFFFAOYSA-N 0.000 claims description 3
- IWHVCHNCTHGORM-UHDJGPCESA-M potassium;(e)-3-phenylprop-2-enoate Chemical compound [K+].[O-]C(=O)\C=C\C1=CC=CC=C1 IWHVCHNCTHGORM-UHDJGPCESA-M 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 25
- 230000000694 effects Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 6
- QXWHDXHJLBWFPV-UHFFFAOYSA-N 4-methyl-2h-benzotriazole;sodium Chemical compound [Na].CC1=CC=CC2=C1N=NN2 QXWHDXHJLBWFPV-UHFFFAOYSA-N 0.000 description 5
- 239000000835 fiber Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000013329 compounding Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- OAVPQXXPJZPXTA-UHFFFAOYSA-N n,n'-di(propan-2-yl)propane-1,3-diamine Chemical compound CC(C)NCCCNC(C)C OAVPQXXPJZPXTA-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- LGNQGTFARHLQFB-UHFFFAOYSA-N 1-dodecyl-2-phenoxybenzene Chemical compound CCCCCCCCCCCCC1=CC=CC=C1OC1=CC=CC=C1 LGNQGTFARHLQFB-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 230000000295 complement effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002191 fatty alcohols Chemical class 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000007644 letterpress printing Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229940051841 polyoxyethylene ether Drugs 0.000 description 1
- 229920000056 polyoxyethylene ether Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- 231100000419 toxicity Toxicity 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention relates to a positive photoresist stripping solution, a preparation method and application thereof. Wherein, the positive photoresist stripping solution comprises the following components in concentration ratio: 22-28 g/L of amine compound; 27-33 g/L of a first photoresist resin solvent; 22-30 g/L of a second photoresist resin solvent; 0.01-8 g/L of additive; the balance being water. The amine compound comprises any one of N, N-diethyl-1, 3-propylene diamine, N-diisopropyl-1, 3-propylene diamine, diethylenetriamine and N- (2-hydroxyethyl) ethylenediamine. The first photoresist resin solvent is dibasic ester DBE or propylene carbonate. The second photoresist resin solvent is 3-methoxy-3-methyl-1-butanol or 2-methyl-2, 4-pentanediol. When the positive photoresist stripping solution provided by the invention is applied to stripping of a COF carrier tape, the stripping temperature is low, the stripping speed is high, the residual photoresist rate is low, and the quality and the efficiency are high.
Description
Technical Field
The invention relates to the technical field of semiconductor preparation, in particular to positive photoresist stripping liquid, a preparation method of the positive photoresist stripping liquid and application of the positive photoresist stripping liquid.
Background
Positive photoresist is a material coated on a printing plate, and is one of important materials for image printing in printing plate making. Positive photoresist stripping solutions are commonly used in plate making processes in gravure and letterpress printing. Before plate making, positive photoresist is coated on a printing plate, then a photosensitive layer of the coated area is solidified through image exposure, and then a required circuit image is formed through the process steps of development, etching, stripping and the like.
With the increasing complexity of the semiconductor chip structure, the environment faced by the photoresist stripping liquid used in the manufacturing process is also more and more complex, the photoresist is required to be removed by the stripping liquid, residues are not generated, and certain corrosion restriction is caused on metal and nonmetal media in the environment. If the corrosion limit is exceeded, irreversible damage to the chip will occur. And 2000 to 4000 fine lines are required to be realized on a thin COF carrier tape, and each fine line needs to have excellent uniformity and withstand various extreme working environments.
When the positive photoresist stripping liquid for the COF carrier tape in the prior art is used for processing, the copper-based substrate is usually spun on positive photoresist with the thickness of more than 20 microns, and after a hardening process, the positive photoresist cannot be stripped cleanly by the general alkaline solvent stripping liquid under the conditions of heating and prolonging the stripping time. Meanwhile, the using parameters in the process are 55-60 ℃, the soaking time is 5 minutes, the photoresist still remains, and the yield is low.
Accordingly, improvements are needed in the art.
Disclosure of Invention
In the prior art, the general alkaline solvent stripping solution cannot strip the positive photoresist cleanly, and meanwhile, the using parameter in the process is 55-60 ℃, the soaking time is 5 minutes, and the photoresist still remains and has low yield, so the invention provides the positive photoresist stripping solution, the preparation method of the positive photoresist stripping solution and the application of the positive photoresist stripping solution in solving the problems.
In order to achieve the above purpose, in a first aspect, the present invention provides a positive photoresist stripping solution, which comprises the following components in concentration ratio:
22-28 g/L of amine compound;
27-33 g/L of a first photoresist resin solvent;
22-30 g/L of a second photoresist resin solvent;
0.01-8 g/L of additive;
the balance being water;
wherein the amine compound comprises any one of N, N-diethyl-1, 3-propanediamine, N-diisopropyl-1, 3-propanediamine, diethylenetriamine and N- (2-hydroxyethyl) ethylenediamine;
the first photoresist resin solvent is dibasic ester DBE or propylene carbonate;
the second photoresist resin solvent is 3-methoxy-3 methyl-1-butanol or 2-methyl-2, 4-pentanediol;
the additive comprises at least one of a wetting agent, a dispersing agent, a metal corrosion inhibitor and an alkali-resistant corrosion inhibitor.
In one implementation, the additive comprises the following components in concentration ratio: 0.01-3 g/L of wetting agent, 0.01-4.5 g/L of dispersing agent, 0.01-0.3 g/L of metal corrosion inhibitor and 0.01-2 g/L of alkali-resistant corrosion inhibitor.
In one implementation, the wetting agent is any one or combination of an axsu Berol 840 high efficiency wetting agent and a dow LFE635 surfactant.
In one implementation, the dispersant is any one or a combination of sodium dodecyl diphenyl ether disulfonate and a Pick BYK-163 wetting dispersant.
In one implementation, the metal corrosion inhibitor includes any one or combination of methyl benzotriazol sodium chloride, 1-methylpyrazole, imidazole, and 1,2, 4-1H-triazole.
In one implementation, the alkali-resistant corrosion inhibitor includes any one or combination of ammonium citrate and potassium cinnamate.
In a second aspect, the invention also provides a preparation method of the positive photoresist stripping solution according to any one of the above, wherein the components in the concentration ratio are uniformly mixed and stirred.
In a third aspect, the present invention also provides an application of the positive photoresist stripping solution according to any one of the above to stripping or cleaning of photoresist and residues thereof of COF carrier tapes.
In one implementation, the application specifically includes: and (3) operating the COF carrier tape to be stripped and the positive photoresist stripping liquid by an immersion method or a spraying method, wherein the operation temperature is 45-50 ℃, and the operation time is 2.5-5 minutes.
The beneficial effects are that: 1. the positive photoresist stripping solution provided by the invention provides a better stripping effect through the compound amine compound, the first photoresist resin solvent, the second photoresist resin solvent and the additive, and the positive photoresist stripping solution can improve the dissolution effect of the positive photoresist stripping solution on various photoresists, improve the stripping efficiency, optimize the stability of the stripping solution and expand the application range through the compound synergy function of the first photoresist resin solvent and the second photoresist resin solvent;
2. the wetting agent and the dispersing agent in the additive are compounded for use, wherein the wetting agent enables the stripping liquid to be fully contacted with the surface of the substrate, the dispersing agent ensures the uniformity of the stripping liquid, and the synergistic effect of the wetting agent and the dispersing agent can greatly improve the efficiency of the stripping liquid, so that the positive photoresist can be stripped more stably and more completely, and the efficiency and the quality of the whole stripping process are improved;
3. the metal corrosion inhibitor and the alkali-resistant etching agent are used in a compounding way, the metal surface, especially the copper surface, of the COF carrier tape can be protected through the metal corrosion inhibitor, meanwhile, the alkali-resistant etching agent can prevent the damage of strong alkaline substances to metal, the stability and the reliability of the metal in the stripping process are improved, and the quality of a final product is improved;
the positive photoresist stripping liquid has the advantages of high photoresist stripping speed, high photoresist stripping capability, low performance tension, good stripping effect on the photoresist of a fine line, no residual photoresist, good water solubility and easy rinsing after photoresist stripping; when the positive photoresist stripping liquid is applied to stripping of the COF carrier tape, the stripping temperature is low, the stripping speed is high, the residual photoresist rate is low, the quality is good, the efficiency is high, and meanwhile, the process operation is simpler.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. Furthermore, the descriptions of the terms "one embodiment," "some embodiments," "examples," "particular examples," or "some examples," etc., described below mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms are not necessarily for the same embodiment or example. The technical features of the respective embodiments of the present invention may be combined with each other as long as they do not collide with each other.
The invention provides a positive photoresist stripping solution, which comprises the following components in concentration ratio:
22-28 g/L of amine compound;
27-33 g/L of a first photoresist resin solvent;
22-30 g/L of a second photoresist resin solvent;
0.01-8 g/L of additive;
the balance being water;
wherein the amine compound comprises any one of N, N-diethyl-1, 3-propanediamine, N-diisopropyl-1, 3-propanediamine, diethylenetriamine and N- (2-hydroxyethyl) ethylenediamine;
the first photoresist resin solvent is dibasic ester DBE or propylene carbonate;
the second photoresist resin solvent is 3-methoxy-3-methyl-1-butanol or 2-methyl-2, 4-pentanediol.
The additive comprises at least one of a wetting agent, a dispersing agent, a metal corrosion inhibitor and an alkali-resistant corrosion inhibitor. Further, the additive comprises the following components in concentration ratio: 0.01-3 g/L of wetting agent, 0.01-4.5 g/L of dispersing agent, 0.01-0.3 g/L of metal corrosion inhibitor and 0.01-2 g/L of alkali-resistant corrosion inhibitor.
Specifically, the N, N-diethyl-1, 3-propylene diamine has the characteristics of strong alkalophilic property and strong reducing capability, and can help to damage a macromolecular chain structure of the photoresist, so that the dissolving capability of the positive photoresist stripping solution is enhanced. Compared with other amines, the stripping effect is better. N, N-diisopropyl-1, 3-propanediamine, diethylenetriamine and N- (2-hydroxyethyl) ethylenediamine also have similar stripping effects.
Specifically, in the first photoresist resin solvent, the dibasic ester DBE is fully called DBE high boiling point solvent mixed dibasic ester, is a dibasic ester mixture, also called dicarboxylic ester, is a low-toxicity and low-odor environment-friendly high boiling point solvent capable of being biodegraded, and can be widely applied to paint, coating, ink industry and other fields. The propylene carbonate has stable property, can help dissolve or soften the photoresist, can be easily peeled off from the silicon wafer, and is important for keeping the integrity and cleanliness of the surface of the silicon wafer; propylene carbonate can also adjust the reaction rate of the stripping solution, ensuring uniform and effective removal of photoresist while reducing potential damage to COF carrier tapes.
Specifically, in the second photoresist resin solvent, 3-methoxy-3-methyl-1-butanol or 2-methyl-2, 4-pentanediol is selected as a common organic solvent with good performance in consideration of the characteristics of volatility, toxicity, dissolving power and the like.
Specifically, when the first photoresist resin solvent and the second photoresist resin solvent are compounded and used, 3-methoxy-3 methyl-1-butanol is used as an organic solvent, so that a good dissolution environment is provided, and the deposition of resin or photoresist is reduced; and N, N diethyl-1, 3-propanediamine can act on the chain structure of the photoresist, so that it is decomposed and dissolved in a solvent. Meanwhile, the combination can also reduce the corrosion to the silicon wafer and improve the stripping efficiency. The first photoresist resin solvent and the second photoresist resin solvent have different working characteristics and functionalities, and can complement and cooperate with each other to realize better dissolution and stripping effects. The use of the compound solvent can also help to improve the stability of the stripping solution. The compound use of the first photoresist resin solvent and the second photoresist resin solvent can improve the dissolution effect of the positive photoresist stripping solution on various photoresists, improve the stripping efficiency, optimize the stability of the stripping solution and enlarge the application range, which is very important for the photoetching process in the microelectronic process. The invention realizes good solubility and the effect of the environment-friendly solvent by providing the first photoresist resin solvent and the second photoresist resin solvent and by compounding the functions of synergy.
Specifically, the wetting agent is any one or combination of an Akesu Berol 840 high-efficiency wetting agent and a Dow LFE635 surfactant. The high-efficiency wetting agent of the Acess Berol 840 is fatty alcohol polyoxyethylene ether, is a nonionic wetting agent and a molecular defoaming agent, and is suitable for dynamic wetting and defoaming of systems such as water-based paint, printing ink, adhesives and the like. In the invention, the Ackesu Berol 840 high-efficiency wetting agent is used for reducing the surface tension, and realizes easy rinsing after the COF carrier tape is peeled. The dow LFE635 surfactant is a low foam surfactant that has good low foam and wettability. Specifically, the dispersing agent is any one or combination of sodium dodecyl diphenyl ether disulfonate and German Pick BYK-163 wetting dispersing agent. Wherein, the sodium dodecyl diphenyl ether disulfonate is preferably the Dow sodium dodecyl diphenyl ether disulfonate which has good heat stability, strong acid, strong alkali and salt solution resistance, shearing resistance and high temperature resistance, strong adsorption capacity and good dispersibility.
In the invention, the wetting agent and the dispersing agent in the additive are compounded and used, wherein the wetting agent enables the stripping liquid to be more fully contacted with the surface of the substrate, the dispersing agent ensures the uniformity of the stripping liquid, and the synergistic effect of the wetting agent and the dispersing agent can greatly improve the efficiency of the stripping liquid, so that the positive photoresist can be stripped more stably and more completely, thereby improving the efficiency and the quality of the whole stripping process.
Specifically, the metal corrosion inhibitor comprises any one or combination of methyl benzotriazol sodium chloride, 1-methylpyrazole, imidazole and 1,2, 4-1H-triazole. Among them, imidazole is used as a rust inhibitor for copper for printed circuit boards and integrated circuits. The alkali-resistant etching agent comprises any one or combination of ammonium citrate and potassium cinnamate. The metal corrosion inhibitor and the alkali-resistant etching agent are both metal protection liquid and are used for protecting the COF carrier tape from being corroded. The metal corrosion inhibitor and the alkali-resistant corrosion inhibitor are used in a compounding way, the metal surface layer can be better protected by the metal corrosion inhibitor, the alkali-resistant corrosion inhibitor can prevent the damage of a strong alkaline substance to metal, the stability and the reliability of the metal in the stripping process can be improved, and the quality of a final product can be improved. In some embodiments, the additive may employ only a metal corrosion inhibitor or only an alkali etch inhibitor.
When no special description is given, the reagents and medicines adopted by the invention are available on the market.
Example 1:
the positive photoresist stripping liquid comprises the following components in percentage by concentration: 25g/L of N, N-diethyl-1, 3-propanediamine, 30g/L of dibasic ester DBE, 25g/L of 3-methoxy-3-methyl-1-butanol, 2g/L of Acussonetia fibre 840 high-efficiency wetting agent, 3.5g/L of sodium dodecyl diphenyl ether disulfonate, 0.2g/L of chloridized methyl benzotriazole sodium salt and 1.5g/L of ammonium citrate.
Comparative example 1:
the positive photoresist stripping liquid comprises the following components in percentage by concentration: 25g/L of N, N-diethyl-1, 3-propanediamine and the balance water.
Comparative example 2:
the positive photoresist stripping liquid comprises the following components in percentage by concentration: 25g/L of N, N-diethyl-1, 3-propanediamine, 30g/L of dibasic ester DBE, 25g/L of 3-methoxy-3-methyl-1-butanol and the balance of water.
Comparative example 3:
the positive photoresist stripping liquid comprises the following components in percentage by concentration: 25g/L of N, N-diethyl-1, 3-propanediamine, 30g/L of dibasic ester DBE, 25g/L of 3-methoxy-3-methyl-1-butanol, 2g/L of Acussonetia Berol 840 high-efficiency wetting agent, 3.5g/L of sodium dodecyl diphenyl ether disulfonate and the balance of water.
Example 2:
the positive photoresist stripping liquid comprises the following components in percentage by concentration: 25g/L of N, N-diethyl-1, 3-propanediamine, 55g/L of dibasic ester DBE, 2g/L of Actussah Berol 840 high-efficiency wetting agent, 3.5g/L of sodium dodecyl diphenyl ether disulfonate, 0.2g/L of sodium methylbenzotriazole chloride and 1.5g/L of ammonium citrate.
Example 3:
the positive photoresist stripping liquid comprises the following components in percentage by concentration: 25g/L of N, N-diethyl-1, 3-propanediamine, 55g/L of 3-methoxy-3-methyl-1-butanol, 2g/L of Ackesu Berol 840 high-efficiency wetting agent, 3.5g/L of sodium Dow dodecyl diphenyl ether disulfonate, 0.2g/L of sodium tolyltriazole chloride and 1.5g/L of ammonium citrate.
Example 4:
example 4 differs from example 1 in that the amine compound used in the positive photoresist stripper is N, N-diisopropyl-1, 3-propanediamine.
Example 5:
example 5 differs from example 1 in that the positive photoresist stripper does not include sodium dow dodecyl diphenyl oxide disulfonate.
Example 6:
example 6 differs from example 1 in that the positive photoresist stripping solution does not include methyl benzotriazol chloride sodium salt.
Example 7:
the positive photoresist stripping liquid comprises the following components in percentage by concentration: 28g/L of N, N-diethyl-1, 3-propanediamine, 29g/L of dibasic ester DBE, 28g/L of 3-methoxy-3-methyl-1-butanol, 2g/L of Acussonetia fibre 840 high-efficiency wetting agent, 3.5g/L of sodium dodecyl diphenyl ether disulfonate, 0.2g/L of chloridized methyl benzotriazole sodium salt and 1.5g/L of ammonium citrate.
Example 8:
the positive photoresist stripping liquid comprises the following components in percentage by concentration: 22g/L of N, N-diethyl-1, 3-propanediamine, 30g/L of dibasic ester DBE, 30g/L of 3-methoxy-3-methyl-1-butanol, 2g/L of Acussonetia fibre 840 high-efficiency wetting agent, 3.5g/L of sodium dodecyl diphenyl ether disulfonate, 0.2g/L of chloridized methyl benzotriazole sodium salt and 1.5g/L of ammonium citrate.
Example 9:
the positive photoresist stripping liquid comprises the following components in percentage by concentration: 25g/L of N, N-diethyl-1, 3-propanediamine, 27g/L of dibasic ester DBE, 22g/L of 3-methoxy-3-methyl-1-butanol, 2g/L of Acussonetia fibre 840 high-efficiency wetting agent, 3.5g/L of sodium dodecyl diphenyl ether disulfonate, 0.2g/L of chloridized methyl benzotriazole sodium salt and 1.5g/L of ammonium citrate.
Example 10:
the positive photoresist stripping liquid comprises the following components in percentage by concentration: 25g/L of N, N-diethyl-1, 3-propanediamine, 33g/L of dibasic ester DBE, 30g/L of 3-methoxy-3-methyl-1-butanol, 2g/L of Acussonetia fibre 840 high-efficiency wetting agent, 3.5g/L of sodium dodecyl diphenyl ether disulfonate, 0.2g/L of chloridized methyl benzotriazole sodium salt and 1.5g/L of ammonium citrate.
The COF carrier tape was peeled off using the positive resist peeling liquid prepared in the above examples and comparative examples, and a resist removal test was performed: immersing the COF carrier tape in the positive photoresist stripping liquid, immersing for different time under different temperature conditions, washing with ultrapure water and drying. Then, the etching condition of the lower layer wiring and the stripping degree of the photoresist are observed under an SEM microscope.
The test results are shown in Table 1 below:
；
table 1 photoresist removal test results.
The positive photoresist stripping solution provided in example 1 was measured to have a reaction temperature of 45 to 55 ℃ under a temperature condition of 40 to 55 ℃. Because the conventional positive photoresist stripping solution is generally treated for 5 minutes, the longest treatment time is set to be 5 minutes in the subsequent experiment. Particularly, when the positive photoresist stripping solution provided in this embodiment is observed under an SEM microscope, the SEM copper surface morphology of the COF carrier tape is unchanged, and the AOI scanning is normal. Experiments prove that the positive photoresist stripping liquid provided by the invention can be stripped in an environment of 45-50 ℃ for 2.5-5 minutes, and compared with the prior art, the stripping temperature is reduced, the stripping time is shortened, and the equipment utilization rate is greatly improved. The additive comprises a hydrophilic surfactant, and pure water is easy to rinse after stripping, so that stripping liquid residues are avoided.
According to the test results, the positive photoresist stripping solution provided by the invention provides a better stripping effect through the compound amine compound, the first photoresist resin solvent, the second photoresist resin solvent and the additive, and meanwhile, the effects of high photoresist stripping speed, high photoresist stripping capability, low expression tension, good stripping effect on the photoresist of a fine line, no residual photoresist, good water solubility and easiness in rinsing after photoresist stripping are realized through the compound synergy function of the first photoresist resin solvent and the second photoresist resin solvent; when the positive photoresist stripping liquid is applied to stripping of the COF carrier tape, the stripping temperature is low, the stripping speed is high, the residual photoresist rate is low, the quality is good, the efficiency is high, and the process operation is simpler.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes using the teachings of this invention or directly or indirectly applied to other related technical fields are included in the scope of this invention.
Claims (9)
1. The positive photoresist stripping solution is characterized by comprising the following components in percentage by concentration:
22-28 g/L of amine compound;
27-33 g/L of a first photoresist resin solvent;
22-30 g/L of a second photoresist resin solvent;
0.01-8 g/L of additive;
the balance being water;
wherein the amine compound comprises any one of N, N-diethyl-1, 3-propanediamine, N-diisopropyl-1, 3-propanediamine, diethylenetriamine and N- (2-hydroxyethyl) ethylenediamine;
the first photoresist resin solvent is dibasic ester DBE or propylene carbonate;
the second photoresist resin solvent is 3-methoxy-3 methyl-1-butanol or 2-methyl-2, 4-pentanediol; the additive comprises at least one of a wetting agent, a dispersing agent, a metal corrosion inhibitor and an alkali-resistant corrosion inhibitor.
2. The positive photoresist stripping solution according to claim 1, wherein the additive comprises the following components in concentration ratio: 0.01-3 g/L of wetting agent, 0.01-4.5 g/L of dispersing agent, 0.01-0.3 g/L of metal corrosion inhibitor and 0.01-2 g/L of alkali-resistant corrosion inhibitor.
3. The positive photoresist stripper according to claim 1, wherein the wetting agent is any one of or a combination of an aksu Berol 840 high efficiency wetting agent and a dow LFE635 surfactant.
4. The positive photoresist stripper according to claim 1, wherein the dispersant is any one of or a combination of sodium dodecyl diphenyl ether disulfonate and german pick BYK-163 wetting dispersant.
5. The positive photoresist stripper according to claim 1, wherein the metal corrosion inhibitor comprises any one of or a combination of methyl benzotriazol sodium chloride, 1-methylpyrazole, imidazole and 1,2, 4-1H-triazole.
6. The positive photoresist stripper according to claim 1, wherein the alkali-resistant biting agent comprises any one of ammonium citrate and potassium cinnamate or a combination thereof.
7. A method for preparing the positive photoresist stripping solution according to any one of claims 1 to 6, characterized in that the components according to the concentration ratio of claim 1 are mixed and stirred uniformly.
8. Use of the positive photoresist stripper as defined in any one of claims 1 to 6 for stripping or cleaning photoresist and its residues of COF carrier tapes.
9. The use according to claim 8, characterized in that it comprises in particular: and (3) operating the COF carrier tape to be stripped and the positive photoresist stripping liquid by an immersion method or a spraying method, wherein the operation temperature is 45-50 ℃, and the operation time is 2.5-5 minutes.
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