TWI426361B - Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings - Google Patents

Description

a composition for effectively removing a post-etching photoresist and a bottom anti-reflective coating

The present invention relates to water-based compositions for efficient removal of such layers from substrates having cured photoresists and/or underlying anti-reflective coatings (BARC) in the manufacture of microelectronic devices, and for the use of such The composition is a method of removing a hardened photoresist and/or a BARC layer from a microelectronic device.

Photolithography techniques include the steps of coating, exposure, and development. The wafer is first coated with a positive or negative photoresist material and then covered with a reticle that defines a pattern to be retained or removed in subsequent processes. After the reticle is properly positioned, monochromatic radiation, such as ultraviolet (UV) light or deep UV (DUV) light (λ) The 250 nm light beam is directed through the reticle so that the exposed photoresist material is more or less soluble in the selected rinsing solution. The soluble photoresist material is then removed, or "developed," leaving the same pattern as the reticle.

There are currently four development radiation wavelengths used in the lithography industry - 436 nm, 365 nm, 248 nm, and 193 nm - and recent research efforts have focused on the 157 nm lithography process. In theory, as the wavelengths decrease, smaller features can be fabricated on the semiconductor wafer. However, since the reflectance of the semiconductor substrate is inversely proportional to the wavelength of the lithography, the photoresist involved in uneven exposure limits the uniformity of the critical dimensions of the microelectronic device.

For example, when exposed to DUV radiation, a combination of a known transmittance of the photoresist and a high reflectance of the substrate to the DUV wavelength causes DUV radiation to be reflected back into the photoresist, thereby creating a standing wave in the photoresist layer. . The standing wave triggers a further photochemical reaction in the photoresist, resulting in a non-uniform exposure of the photoresist included in the masked portion that is not desired to be exposed to the radiation, which causes variations in line width, spacing, and other critical dimensions.

In order to solve the problems of transmittance and reflectance, inorganic and organic underlying antireflective coatings (BARC) have been developed which are applied to a substrate before coating the photoresist. For example, organic BARCs, including, but not limited to, polyfluorenes, polyureas, polyureas, polyacrylates, and poly(vinylpyridines), typically 600-1200 angstroms thick, are deposited using spin coating techniques. . In general, organic BARC is a planarization layer that uniformly fills the channels and is highly crosslinked. The organic BARC prevents light reflection by matching the reflectance of the BARC layer with the reflectance of the photoresist layer, while absorbing radiation, thereby preventing radiation reflection and standing waves.

In the back-end-of-line (dual-damascene) processing of the integrated circuit, vapor phase plasma etching is used to transfer the pattern of the developed photoresist coating to the lower layer. Electrocoating. During the pattern transfer process, the reactive plasma gas reacts with the developed photoresist to cause a hardened, crosslinked polymeric material or "skin" to form on the surface of the photoresist. In addition, the reactive plasma gas reacts with the sidewalls of the BARC and the features etched into the dielectric. In front-end processing (FEOL) processing, ion implantation is used to add dopant atoms to the exposed wafer layer. Photoresist exposed photoresists are similar to plasma etched photoresists and are also highly crosslinked.

Complete removal of the hardened photoresist and/or BARC material from the microelectronic device wafer has proven difficult and/or costly. If not removed, such layers can interfere with subsequent deuteration or contact formation. Typically, such layers are removed via oxidation or reduction plasma ashing or wet cleaning. However, plasma ashing that exposes the substrate to oxidation or reduction plasma etching can cause damage to the dielectric material by changing the shape and size of the features, or by increasing the dielectric constant of the dielectric material. The latter problem is exacerbated when low-k dielectric materials, such as organic tellurite glass (OSG) or carbon-doped oxide glass, are underlying dielectric materials. Therefore, it is often desirable to avoid the use of plasma ashing to remove the hardened photoresist and/or BARC layer.

When using a cleaner/etchant composition in a BEOL application to treat a surface having aluminum or copper interconnects, the composition should have good metal compatibility, for example, low on copper, aluminum, cobalt, and the like. Etching rate. The aqueous removal solution is preferred because of the relatively simple disposal technique, however, the photoresist "skin" is typically very insoluble in aqueous cleaners, especially in detergents that do not damage the dielectric. A substantial amount of cosolvent, wetting agent, and/or surfactant is typically added to the aqueous solution to improve the cleaning power of the solution.

For example, the co-solvent can improve the ability to remove the hardened photoresist by increasing the solubility of the photoresist material in the composition and/or reducing the surface tension of the solution (ie, increasing the wettability). Solvents can increase undesirable corrosion of other materials such as metals and low-k dielectrics. To this end, an aqueous solution containing no cosolvent is required, preferably an aqueous solution of the hardened photoresist and/or BARC layer can be completely and efficiently removed from the underlying dielectric.

The present invention relates to a removal composition comprising a high chaotropic solute. Theoretically, high chaotropic solutes disassemble or separate the hydrogen bonding structure of liquid water, thereby increasing the solubility of other species (eg, polymers) in water. The effect of chaotrope was first noted by Hofmeister in 1888 (Hofmeister, F., Arch. Exp. Pathol. Pharmakol . , 24, 247-260 (1888)) as a function of protein solubility, and contains one These anions are produced based on protein solubility in a solution of "series" anions (Collins, KD, Washabaugh, MW, Quart . Rev. Biophysics , 18(4), 323-422 (1985)). Well-known high chaotropic anions include Cl ^- , NO ₃ ^- , Br ^- , I ^- , ClO ₄ ^- , and SCN ^- . Other high chaotropic species include strontium ions and nonionic ureas which have been shown to increase the solubility of hydrocarbons in aqueous solutions (Wetlaufer, DB, Malik, SK, Stoller, L., Coffin, RL, J. Am. Chem. Soc. , 86, 508-514 (1964)).

Recently, Xu et al. reported the swelling behavior of poly(4-vinylphenol) gel in a solution containing a chaotropic agent (Xu, L., Yokoyama, E., Watando, H., Okuda-Fukui, R., Kawauchi, S., Satoh, M., Langmuir , 20, 7064-7069 (2004)). Poly(4-vinylphenol) is a highly crosslinked polymer that has been shown to swell in aqueous tetraalkylammonium chloride, and the swelling indicates increased solubility of the polymer in a solution containing a chaotropic agent. Similarly, the hardened photoresist and the BARC layer are highly crosslinked, so high chaotropic solutes should theoretically swell the crosslinked photoresist and BARC layer in a similar manner.

Accordingly, it would be a significant advancement in the art to provide a water-based composition that is free of cosolvent-removing prior art removal of the hardened photoresist and/or BARC layer from the microelectronic device.

Further, a water-based composition comprising a high chaotropic solute is provided to increase the solubility of the hardened photoresist and/or the BARC layer in the composition to achieve a microelectronic device having the layers from the layers The removal of the surface will be a major advancement in the art.

The present invention relates to water-based compositions for use in the manufacture of microelectronic devices for effectively removing such layers from a substrate having a cured photoresist and/or BARC layer thereon, and for the use of such compositions A method of removing a hardened photoresist and/or a BARC layer by a microelectronic device.

In one aspect, the present invention is directed to a water-based removal composition for effectively removing such materials from a substrate of a microelectronic device having a photoresist and/or a bottom anti-reflective coating (BARC) material. The composition comprises at least one high chaotropic solute and at least one basic salt in an aqueous medium, wherein the removal composition is effective for use on a microelectronic device having a photoresist and/or a BARC material Wait for material to be removed.

In another aspect, the invention relates to a method of removing a material from a substrate having a photoresist and/or a BARC material, the method comprising contacting the substrate with a water-based removal composition for a sufficient period of time, The material is at least partially removed from the substrate, wherein the water-based removal composition comprises at least one high chaotropic solutes and at least one basic salt in the aqueous medium.

In another aspect, the present invention is directed to a method of fabricating a microelectronic device, the method comprising contacting a microelectronic device with a water-based removal composition for a time sufficient to have a photoresist and/or a BARC material. The material is at least partially removed from the microelectronic device, wherein the water-based removal composition comprises at least one high chaotropic solutes and at least one basic salt in the aqueous medium.

Still another aspect of the invention is directed to an improved microelectronic device made using the method of the invention and an article incorporating the device, the method comprising using the method and/or composition described herein to have a photoresist thereon The microelectronic device of the agent and/or BARC layer at least partially removes the material and, if desired, incorporates the microelectronic device into the article.

Other aspects, features and specific examples of the invention will be apparent from the appended claims and appended claims.

The present invention is based on the discovery of a water-based composition that is extremely effective in removing such materials from patterned microelectronic device wafers having cured photoresist and BARC layers thereon. In particular, the present invention relates to the removal of hardened photoresist and/or BARC layers from plasma-etched and/or ion-implanted microelectronic device wafers.

For ease of reference, "microelectronic devices" correspond to semiconductor substrates, flat panel displays, and microelectromechanical systems (MEMS) that are manufactured for use in microelectronics, integrated circuits, or computer chip applications. It should be understood that the term "microelectronic device" is not meant to be limiting, and it includes any substrate that will eventually become a microelectronic device or microelectronic assembly. The microelectronic device is preferably a semiconductor substrate.

As used herein, "hardened photoresist" includes, but is not limited to, plasma etched (eg, in BEOL dual damascene processing of integrated circuits) and/or ion implanted (eg, in front end processing (FEOL) processing) A photoresist for implanting a dopant species in a suitable layer of a microelectronic device wafer.

As used herein, "about" is equivalent to ± 5% of the stated value.

The compositions of the present invention may be embodied as a more complete description of the particular formulations which will be described hereinafter.

In all such compositions (wherein the specific components of the composition are referred to in the range of weight percentages including the lower limit of zero), it will be apparent that such components may or may not be present in various specific embodiments of the composition and are present In the case of such ingredients, it may be present in a concentration as low as 0.01 weight percent based on the total weight of the composition in which the ingredients are used.

In one aspect, the invention is directed to a water-based removal composition for removing a hardened photoresist and/or a BARC layer from a substrate of a microelectronic device. The formulation of the present invention comprises at least one high chaotropic solute and at least one basic salt in an aqueous medium, which is present in the following ranges, based on the total weight of the composition:

In a broad practice of the invention, the water-based removal composition can comprise, consist of, or consist essentially of at least one high chaotropic solute and at least one basic salt in an aqueous medium. In general, the specific ratios and amounts of high chaotropic solutes, basic salts, and aqueous media relative to each other can be suitably varied to provide water-based compositions for hardened photoresists and/or BARC layer species and/or processing equipment. The desired removal action can be easily determined within the skill skill without undue effort.

As used herein, "aqueous medium" can be any aqueous medium that does not alter the removal effectiveness of at least one high chaotropic solutes and at least one basic salt. The aqueous medium is preferably water, and the deionized water is the best.

The high chaotropic solute increases the solubility of the hardened photoresist and/or the BARC component species in the water-based composition. As used herein, "highly chaotropic solute" means a water-soluble or aqueous alkaline soluble neutral and anionic species that enhances the ability of an aqueous alkaline composition to remove a hardened photoresist and/or a BARC layer. The "high chaotropic anion" preferably has an atomic or molecular radius greater than or equal to 1.6 angstroms. For example, such highly anion-removing anions include, but are not limited to, chloride, bromide, iodide, nitric acid. Root, thiocyanate and chlorate. Other solutes contemplated for use herein as high chaotropic solutes include, but are not limited to, urea; and phosphonium salts, for example, rhodium chloride. In addition, it is expected that some solutes may be used as chaotropic agents based on structural similarities to known chaotropic agents. Such solutes may include, but are not limited to, anionic benzoates and benzoate derivatives such as 2-, 3- or 4-aminobenzoic acid, 2-, 3- or 4-nitrobenzoic acid, 2-, 3- or 4-p-methoxybenzoic acid, 2-, 3- or 4-fluoro-, chloro-, bromo- or iodo-benzoic acid, 2-, 3- or 4-methylthiobenzoic acid, And other monosubstituted or polysubstituted benzoates; 2,4-diamino-6-methyl-1,3,5-three An aniline or substituted aniline such as 2-, 3- or 4-methylthioaniline or 2-, 3- or 4-methoxyaniline; 1,2-, 1,3- or 1,4-phenylenediamine, Nitrogen-containing heterocyclic compounds such as 1,3,5-three Or replaced by 1,3,5-three Such as melamine, acetaminophen, 2,4-diamino-6-phenyl-1,3,5-three 2-chloro-4,6-diamino-1,3,5-three , 2,4,6-trimethoxy-1,3,5-three , 2,4,6-trimethoxy-1,3,5-three 2,4-diamino-1,3,5-three 2-amino-1,3,5-three 2-amino-4-ethoxy-6-(methylamino)-1,3,5-three 2-methoxy-4-methyl-6-(methylamino)-1,3,5-three 1,2,4-triazole or substituted 1,2,4-triazole; imidazole or substituted imidazole such as 2-mercaptoimidazole and 2-mercaptobenzimidazole.

The cation associated with the high chaotropic anion is preferably free of metal ions, for example, (NR ¹ R ² R ³ R ⁴ ) ⁺ , wherein R ¹ , R ² , R ³ and R ⁴ may be the same or different from each other, and independently selected from the group consisting faculties the group consisting of hydrogen and C ₁ -C ₆ alkyl. The cations associated with the high chaotropic anion are preferably tetramethylammonium, tetrabutylammonium and benzyltrimethylammonium ions.

The alkaline salt can attack the hardened photoresist and/or the BARC layer. Although not based on theory, it is believed that the high chaotropic solute swells the polymeric layer such that the basic salt erodes each interface of the hardened photoresist and/or BARC layer. Thus, the interface between the substrate and the hardened photoresist and/or BARC layer is compromised and the hardened photoresist and/or BARC layer is detached from the substrate. The basic salt considered herein includes a metal ion-free hydroxide, for example, (NR ¹ R ² R ³ R ⁴ )OH, wherein R ¹ , R ² , R ³ and R ⁴ may be the same or different from each other, and independently selected from the group consisting faculties the group consisting of hydrogen and C ₁ -C ₆ alkyl. The basic salt is tetramethylammonium hydroxide and the pH of the water-based removal composition is preferably at least about 13.

In general, the specific ratios and amounts of high chaotropic solutes, basic salts, and deionized water relative to each other can be suitably varied to provide a water-based composition for the particular photoresist and/or BARC layer to be removed from the substrate. Desirable dissolution. These specific ratios and quantities can be easily determined by simple experimentation within the skill skill without undue effort.

The removal efficiency of the water-based removal composition of the present invention can be enhanced by utilizing high temperature conditions in the contact of the photoresist and/or BARC layer to be removed with the water-based removal composition.

The water-based removal composition of the present invention can be formulated to have additional ingredients as needed to further enhance the removal ability of the composition, or otherwise improve the characteristics of the composition. Thus, the composition can be formulated to have surfactants, stabilizers, chelating agents, corrosion inhibitors, complexing agents, and the like. While the water-based removal compositions of the present invention generally do not contain an organic co-solvent, they may comprise an organic co-solvent as long as they do not corrode other materials such as metals and low-k dielectrics. Cosolvents contemplated herein include alkanols (eg, linear or branched C ₁ -C ₆ alcohols), butyl carbitol, methyl carbitol, cyclobutane-w, cyclobutane A, and propylene glycol. .

Preferred water-based removal compositions include the following formulations (A)-(J): (Formulation A) 2.5% by weight of tetramethylammonium hydroxide 20.0% by weight of urea 77.5 % by weight of deionized water (Formulation B) 1.5 Weight% tetramethylammonium hydroxide 1.6% by weight 2,4-diamino-6-methyl-1,3,5-three 20.0% by weight of urea 76.9 % by weight of deionized water (Formulation C) 2.0% by weight of tetramethylammonium hydroxide 1.0% by weight 2,4-diamino-6-methyl-1,3,5-three 1.0% by weight 4-aminobenzoic acid 96.0% by weight deionized water (Formulation D) 2.0% by weight Tetramethylammonium hydroxide 2.4% by weight Tetramethylammonium nitrate 95.6 wt% Deionized water (Formulation E) 5.0% by weight of hydroxide 4 Methylammonium 9.0 wt% tetramethylammonium nitrate 10.0 wt% butyl carbitol 10.0 wt% cyclobutane-w 66.0 wt% deionized water (formulation F) from about 1.0 wt% to about 5.0 wt% tetramethylammonium hydroxide From about 1.0% by weight to about 20.0% by weight of the 4-, 3- or 4-nitrobenzoic acid tetramethylammonium salt, the remainder being deionized water (Formulation G) from about 1.0% by weight to about 5.0% by weight of tetramethylammonium hydroxide Ammonium from about 1.0% by weight to about 20.0% by weight of o-, m- or p-phenylenediamine, the remainder being deionized water (Formulation H) 8.2% by weight of tetrabutylammonium hydroxide; 20.0% by weight of cyclobutane A 30.0 by weight % methyl carbitol; 17.0% by weight propylene glycol 2.0% by weight 2,4-diamino-6-methyl-1,3,5-three 22.8 wt% deionized water; (Formulation I) 6.0 wt% benzyltrimethylammonium hydroxide 10.0 wt% cyclobutane A 10.0 wt% methyl carbitol; 20.0 wt% propylene glycol 2.0 wt% 2,4-diamino group -6-methyl-1,3,5-three 52% by weight of deionized water; and (Formulation J) 2.9% by weight of benzyltrimethylammonium hydroxide 0.025% by weight of potassium hydroxide 22.0% by weight of cyclobutane A 27.0% by weight of methyl carbitol; 17.9% by weight of propylene glycol 1.5% by weight Urea 0.08% 2-mercaptobenzimidazole 28.595% by weight deionized water.

In another embodiment of the invention, the water-based removal composition comprises at least one high chaotropic solute, at least one basic salt, and a photoresist in the aqueous medium. The photoresist is preferably hardened and dissolved in the water-based removal composition. In still another embodiment of the invention, the water-based removal composition comprises at least one high chaotropic solute, at least one basic salt, and a BARC material in the aqueous medium. It is preferred that the hardening photoresist is dissolved in the water-based removal composition.

The water-based composition of the present invention is easily formulated by simply adding the respective components and mixing them into a uniform state. Further, the removal of the composition can be easily formulated into a single serving or a plurality of formulations that are mixed at the time of use. Individual portions of multiple formulations can be mixed at the tool or mixed in a storage tank upstream of the tool. In a broad practice of the invention, the concentration of the individual components may vary widely, i.e., more dilute or more concentrated, in a particular multiple of the removal composition, and may be varied and alternatively included when it is understood that the removal composition of the present invention is Combinations of any of the components consistent with the disclosure herein are composed of, or consist essentially of, the constituents.

Thus, one embodiment of the invention is directed to a concentrated formulation of the compositions described herein without water, wherein water can be added prior to use to form the removal compositions of the present invention.

Accordingly, another aspect of the present invention is directed to a kit comprising two or more components suitable for forming the water-based removal composition of the present invention in one or more containers. Preferably, the kit comprises at least one high chaotropic solute, at least one basic salt, and water in one or more containers. According to another embodiment, the kit includes at least one high chaotropic solute, at least one basic salt, and water for binding to water at the time of manufacture.

In another aspect, the invention relates to the removal of a hardened photoresist and/or a BARC layer from a surface of a microelectronic device wafer using a water-based removal composition as described in the formulations (A)-(J). method.

In a hardened photoresist and/or BARC removal application, the water-based composition is applied to the material to be cleaned in any suitable manner, for example, by spraying a water-based composition onto the surface of the material to be cleaned, via the material Or an article comprising the material to be cleaned (in a large amount of water-based composition), via another material (eg, a mat) or a fiber-absorbent applicator element that saturates the material or article to be cleaned with the water-based composition Contact, or any other suitable means, means or technique by which the water-based composition can be removed from contact with the material to be cleaned.

Other cleaning methods can be utilized to clean a complete wafer such as 200 or 300 mm in diameter typically used in microelectronic device circuit fabrication, such as single wafer or batch immersion, or single wafer or batch spray.

When applied to microelectronic device fabrication operations, the water-based compositions of the present invention have such materials removed from the substrate and microelectronic device structure from which the deposited hardenable photoresist and/or BARC material are deposited.

The compositions of the present invention are based on their selectivity for such hardened photoresists and/or BARC materials relative to other materials that may be present on the substrate of the microelectronic device (eg, ILD structure, metallization, barrier layers, etc.), The removal of the hardened photoresist and/or BARC material is achieved in a highly efficient manner.

When the composition of the present invention is used to remove such materials from a microelectronic device substrate having a photoresist and/or BARC material thereon, the water-based composition and substrate are typically at a temperature of from about 40 ° C to about 80. Contact at a temperature in the range of °C for a period of from about 1 minute to about 60 minutes. Such contact times and temperatures are illustrative, and in the broad practice of the present invention, any other water-based composition of the present invention can be used to effectively remove the hardened photoresist and/or BARC material from the substrate. Appropriate time and temperature conditions.

After the desired removal is achieved, the water-based composition can be readily removed from the substrate or article to which it was previously applied, for example, by rinsing, washing, or other removal steps, which may be in the composition of the present invention. The designation of the object is required and effective in the final application. The substrate or article is rinsed with a large amount of deionized water and preferably dried with nitrogen prior to subsequent processing.

In another aspect, the present invention is directed to a method of fabricating a microelectronic device, the method comprising contacting a microelectronic device with a water-based removal composition for a time sufficient to have a photoresist and/or BARC thereon The microelectronic device of the material at least partially removes the material, wherein the water-based removal composition comprises at least one high chaotropic solutes and at least one basic salt in the aqueous medium. The photoresist is preferably hardened.

Still another aspect of the invention is directed to an improved microelectronic device made using the method of the invention and an article incorporating the device, the method comprising using the method and/or composition described herein to have a photoresist thereon The microelectronic device of the agent and/or BARC layer at least partially removes the material and, if desired, incorporates the microelectronic device into the article. The photoresist is preferably hardened.

The features and advantages of the present invention are more fully apparent from the following description of the embodiments.

(Example 1)

Cleaning is performed on a sample of a patterned semiconductor substrate consisting of a layer of hardened photoresist, BARC, low-k dielectric (specifically, an oxide of doped carbon), and tantalum nitride. A plasma etch is performed in advance to transfer patterns of lines, spaces, and holes of different sizes from about 100 nm to more than 10 microns from the pattern formed in the top coat of the photoresist to the underlying material. The pattern consists of a space that is etched into the substrate and terminated at the tantalum nitride etch stop layer. The hardened photoresist and BARC appear as a coating between 10 and 50 nm.

Cleaning is carried out by immersing a substrate in a static tank of the aforementioned Formulation A cleaning solution at a fixed temperature for a fixed period of time. After soaking for a set time, the sample was removed, rinsed with large amounts of deionized water, and blown dry with nitrogen. A cleaning time of 30 minutes at 55 ° C is sufficient to remove 100% of the hardened photoresist and BARC. The cleaning effect was observed using a top-down optical microscope and confirmed by a scanning electron microscope (SEM).

(Example 2)

Cleaning using Formulation B was performed on a sample such as the patterned semiconductor substrate described in Example 1 using the same method as described in Example 1. As observed with a down-beam optical microscope and confirmed by scanning electron microscopy (SEM), a soaking time of more than 20 minutes but less than 30 minutes at 55 ° C is sufficient to remove 100% of the hardened photoresist and BARC from the substrate. material.

(Example 3)

Cleaning using Formulation C was performed on a sample such as the patterned semiconductor substrate described in Example 1 using the same method as described in Example 1. As observed by a down-beam optical microscope and confirmed by scanning electron microscopy (SEM), a soaking time of more than 20 minutes but less than 30 minutes at 55 ° C is sufficient to remove nearly 100% of the hardened photoresist from the substrate and BARC material.

(Example 4)

Cleaning using Formulation D was performed on a sample such as the patterned semiconductor substrate described in Example 1 using the same method as described in Example 1. As observed with a down-beam optical microscope and confirmed by scanning electron microscopy (SEM), a soaking time of more than 20 minutes but less than 30 minutes at 55 ° C is sufficient to remove about 90% of the photoresist and BARC from the substrate. material.

(Example 5)

Cleaning using Formulation E was performed on a sample such as the patterned semiconductor substrate described in Example 1 using the same method as described in Example 1. As observed with a down-beam optical microscope and confirmed by scanning electron microscopy (SEM), a soaking time of about 20 minutes at 55 ° C is sufficient to remove 100% of the photoresist and BARC material from the substrate.

Therefore, the present invention has been described with reference to the specific aspects, features, and description of the present invention, but it is understood that the utility of the present invention is not limited thereby, but extends to cover many other aspects and features. Specific examples. Therefore, the scope of the patent application, which is described in the following, is to be construed as broadly construed to include all such aspects, features and specific examples.

Claims (17)

A water-based removal composition for effectively removing such materials from a substrate of a microelectronic device having a photoresist and/or a bottom anti-reflective coating (BARC) material, the composition being included in an aqueous medium 1.0% by weight to 30.0% by weight of at least one high chaotropic solute and 1.0% by weight to 10.0% by weight of at least one basic salt, wherein the at least one high chaotropic solute comprises a high chaotropic liquid selected from the group consisting of Species: urea; cesium chloride; 2-, 3- and 4-aminobenzoic acid; 2-, 3- and 4-nitrobenzoic acid; 2-, 3- and 4-p-methoxybenzoic acid; , 3- and 4-fluoro-, chloro-, bromo- and iodo-benzoic acid; 2-, 3- and 4-methylthiobenzoic acid; 2,4-diamino-6-methyl-1,3 , 5-three Aniline; 2-, 3- and 4-methylthioaniline; 2-, 3- and 4-methoxyaniline; 1,2-, 1,3- and 1,4-phenylenediamine; 1,3, 5-three Melamine; acetaminophen; 2,4-diamino-6-phenyl-1,3,5-three 2-chloro-4,6-diamino-1,3,5-three ;2,4,6-trimethoxy-1,3,5-three ;2,4,6-trimethoxy-1,3,5-three ; 2,4-diamino-1,3,5-three ; 2-amino-1,3,5-three ; 2-amino-4-ethoxy-6-(methylamino)-1,3,5-three ; 2-methoxy-4-methyl-6-(methylamino)-1,3,5-three ; 1,2,4-triazole; imidazole; 2-mercaptoimidazole; 2-mercaptobenzimidazole; and combinations thereof, and wherein the removal composition has a pH greater than 13, and wherein the removal composition is Effectively used to remove such materials from microelectronic devices having photoresist and/or BARC materials. The composition of claim 1, further comprising at least one organic co-solvent selected from the group consisting of alkanols, diethylene glycol monobutyl ether, diethylene glycol monomethyl ether, cyclobutyl hydrazine, and propylene glycol. a group of people. The composition of claim 1, wherein the cation associated with the high chaotropic anion comprises (NR ¹ R ² R ³ R ⁴ ) ⁺ , wherein R ¹ , R ² , R ³ and R ⁴ are each other The same or different, and each of the lines is independently selected from the group consisting of hydrogen and a C ₁ -C ₆ alkyl group. The composition of claim 1, wherein the at least one high chaotropic solute comprises a high chaotropic anion having an atomic or molecular radius greater than or equal to 1.6 angstroms. The composition of claim 1, wherein the at least one high chaotropic solute comprises urea. The composition of claim 1, wherein the at least one basic salt comprises (NR ¹ R ² R ³ R ⁴ )OH, wherein R ¹ , R ² , R ³ and R ⁴ may be the same or different from each other, And each line is independently selected from the group consisting of hydrogen and a C ₁ -C ₆ alkyl group. The composition of claim 1 is selected from the group consisting of formula AF, wherein all percentages are by weight based on the total weight of the formula: (Formulation A) 2.5% by weight of tetramethylammonium hydroxide; 20.0 weight % urea; 77.5 wt% deionized water; (formulation B) 1.5 wt% tetramethylammonium hydroxide; 1.6 wt% 2,4-diamino-6-methyl-1,3,5-three 20.0% by weight of urea; 76.9% by weight of deionized water; (Formulation C) 2.0% by weight of tetramethylammonium hydroxide; 1.0% by weight of 2,4-diamino-6-methyl-1,3,5-three 1.0 wt% 4-aminobenzoic acid; 96.0 wt% deionized water; (Formulation D) 8.2 wt% tetrabutylammonium hydroxide; 20.0 wt% cyclobutane A; 30.0 wt% methyl carbitol; 17.0 wt % propylene glycol; 2.0% by weight 2,4-diamino-6-methyl-1,3,5-three 22.8% by weight of deionized water; (Formulation E) 6.0% by weight of benzyltrimethylammonium hydroxide; 10.0% by weight of cyclobutane A; 10.0% by weight of methyl carbitol; 20.0% by weight of propylene glycol; 2.0% by weight of 2,4 -diamino-6-methyl-1,3,5-three 52% by weight of deionized water; and (Formulation F) 2.9% by weight of benzyltrimethylammonium hydroxide; 0.025% by weight of potassium hydroxide; 22.0% by weight of cyclobutyl hydrazine A; 27.0% by weight of methyl carbitol; 17.9% by weight Propylene glycol; 1.5% by weight of urea; 0.08% by weight of 2-mercaptobenzimidazole; 28.595% by weight of deionized water. A method of removing a material from a substrate having a photoresist and/or a BARC material, the method comprising contacting the substrate with a water-based removal composition for a time sufficient to at least partially remove the material from the substrate, Wherein the water-based removal composition comprises 1.0% by weight to 30.0% by weight of at least one high chaotropic solute and 1.0% by weight to 10.0% by weight of at least one basic salt in the aqueous medium, wherein the at least one high separation The liquid solute comprises a high chaotropic species selected from the group consisting of urea; cesium chloride; 2-, 3- and 4-aminobenzoic acid; 2-, 3- and 4-nitrobenzoic acid; , 3- and 4-p-methoxybenzoic acid; 2-, 3- and 4-fluoro-, chloro-, bromo- and iodo-benzoic acid; 2-, 3- and 4-methylthiobenzoic acid; 4-diamino-6-methyl-1,3,5-three Aniline; 2-, 3- and 4-methylthioaniline; 2-, 3- and 4-methoxyaniline; 1,2-, 1,3- and 1,4-phenylenediamine; 1,3, 5-three Melamine; acetaminophen; 2,4-diamino-6-phenyl-1,3,5-three 2-chloro-4,6-diamino-1,3,5-three ;2,4,6-trimethoxy-1,3,5-three ;2,4,6-trimethoxy-1,3,5-three ; 2,4-diamino-1,3,5-three ; 2-amino-1,3,5-three ; 2-amino-4-ethoxy-6-(methylamino)-1,3,5-three ; 2-methoxy-4-methyl-6-(methylamino)-1,3,5-three ; 1,2,4-triazole; imidazole; 2-mercaptoimidazole; 2-mercaptobenzimidazole; and combinations thereof, and the removal composition thereof having a pH greater than 13. The method of claim 8, wherein the substrate comprises micro Electronic device structure. The method of claim 8, wherein the material comprises a layer selected from the group consisting of: a photoresist hardened by plasma etching; a photoresist hardened by ion implantation; and BARC. The method of claim 8, wherein the contact is carried out for a period of from 1 minute to 60 minutes. The method of claim 8, wherein the contacting is carried out at a temperature ranging from 40 ° C to 80 ° C. The method of claim 8, further comprising at least one organic cosolvent selected from the group consisting of an alkanol, diethylene glycol monobutyl ether, diethylene glycol monomethyl ether, cyclobutyl hydrazine, and propylene glycol. Group. The method of claim 8, wherein the cation associated with the high chaotropic anion comprises (NR ¹ R ² R ³ R ⁴ ) ⁺ , wherein R ¹ , R ² , R ³ and R ⁴ are the same as each other or different and are independently selected from the group consisting of hydrogen and faculties C ₁ -C ₆ alkyl group composed of. The method of claim 8, wherein the at least one basic salt comprises (NR ¹ R ² R ³ R ⁴ )OH, wherein R ¹ , R ² , R ³ and R ⁴ may be the same or different from each other, and independently selected from the group consisting faculties the group consisting of hydrogen and C ₁ -C ₆ alkyl. The method of claim 8, wherein the water-based removal composition is selected from the group consisting of Formulation AF, wherein all percentages are by weight based on the total weight of the formulation: (Formulation A) 2.5% by weight hydrogen Tetramethylammonium oxide; 20.0% by weight of urea; 77.5 wt% deionized water; (Formulation B) 1.5% by weight of tetramethylammonium hydroxide; 1.6% by weight of 2,4-diamino-6-methyl-1,3, 5-three 20.0% by weight of urea; 76.9% by weight of deionized water; (Formulation C) 2.0% by weight of tetramethylammonium hydroxide; 1.0% by weight of 2,4-diamino-6-methyl-1,3,5-three 1.0 wt% 4-aminobenzoic acid; 96.0 wt% deionized water; (Formulation D) 8.2 wt% tetrabutylammonium hydroxide; 20.0 wt% cyclobutane A; 30.0 wt% methyl carbitol; 17.0 wt % propylene glycol; 2.0% by weight 2,4-diamino-6-methyl-1,3,5-three 22.8% by weight of deionized water; (Formulation E) 6.0% by weight of benzyltrimethylammonium hydroxide; 10.0% by weight of cyclobutane A; 10.0% by weight of methyl carbitol; 20.0% by weight of propylene glycol; 2.0% by weight of 2,4 -diamino-6-methyl-1,3,5-three 52% by weight of deionized water; and (Formulation F) 2.9% by weight of benzyltrimethylammonium hydroxide; 0.025% by weight of potassium hydroxide; 22.0% by weight of cyclobutyl hydrazine A; 27.0% by weight of methyl carbitol; 17.9% by weight Propylene glycol; 1.5% by weight of urea; 0.08% by weight of 2-mercaptobenzimidazole; 28.595% by weight of deionized water. The method of claim 8, further comprising rinsing the substrate with deionized water after contacting the water-based removal composition.