KR20140044315A - Vapor-deposition device and vapor-deposition method - Google Patents

Abstract

The present invention provides a vapor deposition apparatus and a vapor deposition method capable of high-definition vapor deposition and capable of long continuous operation. In the deposition apparatus of the present invention, in the deposition chamber 30, the deposition material evaporated from the evaporation source 1 is deposited on the substrate 4 through the mask opening of the deposition mask 2, and the deposition mask 2 A vapor deposition apparatus configured to form a vapor deposition film having a film formation pattern defined by a) on a substrate 4, having a scattering restriction portion provided with a limiting opening portion 5 for limiting the scattering direction of evaporated particles evaporated from the evaporation source 1. And a load holder 32 having a mask holder 6 on which the deposition mask 2 is attached, and allowing the mask holder 6 on which the deposition mask 2 is attached to and from the deposition chamber 30. ), An exchange chamber 31 having a waiting chamber 33 through which the mask holder 6 can come and go with the load lock chamber 32 and an ejection chamber 34 through which the mask holder 6 can be taken out. The vapor deposition apparatus characterized by the above-mentioned.

Description

Deposition apparatus and deposition method {VAPOR-DEPOSITION DEVICE AND VAPOR-DEPOSITION METHOD}

This invention relates to the vapor deposition apparatus and vapor deposition method which form the vapor deposition film of the film-forming pattern by a vapor deposition mask on a board | substrate.

Recently, an organic EL display device using an organic electroluminescent element has attracted attention as a display device replacing CRT or LCD.

This organic EL display device has a structure in which an electrode layer and a plurality of organic light emitting layers are laminated on a substrate, and an encapsulation layer is formed on the substrate. It can be realized.

Such an organic EL device is generally manufactured by a vacuum vapor deposition method, and the vapor deposition is performed by aligning and adhering a substrate and a deposition mask in a vacuum chamber, and using this deposition mask, a vapor deposition film having a desired film formation pattern is formed on the substrate.

In addition, in the manufacture of such an organic EL device, the deposition mask for obtaining the desired film formation pattern is also enlarged with the enlargement of the substrate, but for this enlargement, it is necessary to fabricate by welding and fixing the mask frame with the tension applied to the deposition mask. If the deposition mask is not easy to manufacture and the tension is insufficient, the mask may be warped in the center of the mask due to the enlargement of the mask, thereby decreasing the adhesion between the deposition mask and the substrate. It becomes large, and thickening and weight increase become remarkable.

As described above, although the deposition mask is required to be enlarged with the increase in the substrate size, it is difficult to increase the size of the high-definition mask, and even if it can be produced, various problems are practically generated due to the warpage problem.

Further, as disclosed in, for example, Japanese Patent Application Laid-Open No. 2010-511784, there is also a method in which an organic light emitting layer is formed with a high precision by an opening for disposing a substrate and a deposition mask and generating evaporation particles having directivity and an evaporation source. Since the evaporation source and the opening portion for generating directivity have an integral structure, and in order to generate evaporated particles from the opening, the evaporation source is configured to heat the integrated structure at a high temperature, so that the radiation mask from the evaporation source is received by the vapor deposition mask. The fall of the positional precision of the film-forming pattern by thermal expansion of a mask cannot be prevented.

In addition, since the distance between the evaporation source and the deposition mask is close, a large amount of material adheres to the deposition mask at the time of film formation, and there is a problem that it must be replaced frequently.

Patent Document 1: Japanese Patent Publication No. 2010-511784

SUMMARY OF THE INVENTION The present invention solves these various problems, and with the enlargement of the substrate, the deposition pattern by the deposition mask is broadly extended by relatively moving the substrate in a spaced state even with a deposition mask smaller than the substrate without increasing the deposition mask evenly. It is possible to deposit the deposited film of the film, and to move relatively in spaced state, so that the structure can be deposited quickly and efficiently, and furthermore, by providing a limiting opening between the evaporation source and the deposition mask even in the spaced state, the evaporated particles The deposition direction is deposited on a mask holder having a scattering restriction portion provided with the restriction opening, by restricting the scattering direction of the film to prevent the deposition pattern from overlapping without passing the evaporated particles from the evaporation port portion adjacent to or separated from each other. In one configuration, the mask holder is not only a It is possible to suppress the incidence of radiant heat from the evaporation source and to relatively move the substrate and the deposition mask in a spaced apart state, and to perform high-definition deposition, and to replace the mask holder on which the deposition mask is installed by adding an exchange chamber. It aims at providing the vapor deposition apparatus and vapor deposition method which can continuously operate for a long time by this.

The gist of the present invention will be described with reference to the accompanying drawings.

In the deposition chamber 30, the deposition material evaporated from the evaporation source 1 is deposited on the substrate 4 through the mask opening of the deposition mask 2, and the deposition pattern defined by the deposition mask 2 is formed. A vapor deposition apparatus configured to form a vapor deposition film on a substrate 4, wherein the evaporation source 1 evaporates from the evaporation source 1 between the evaporation source 1 and the substrate 4 arranged in a state opposite to the evaporation source 1. The mask holder 6 which has the scattering restriction part provided with the restriction | limiting opening part 5 which restricts the scattering direction of the evaporation particle of film-forming material is arrange | positioned, and is arrange | positioned at this mask holder 6 at the spaced apart state with the said board | substrate 4. The deposition mask 2 is placed, and the substrate 4 is spaced apart from the deposition mask 2 with respect to the mask holder 6 and the evaporation source 1 on which the deposition mask 2 is placed. To be relatively movable while maintaining the deposition mask 2 The load lock chamber 32 in which the attached mask holder 6 can come and go with the deposition chamber 30, and the mask holder 6 in which the deposition mask 2 is placed come and go with the load lock chamber 32. And an exchange chamber (31) having a drawing chamber (34) capable of taking out the mask holder (6) in which the deposition mask (2) is provided outside the apparatus (3). It is about.

Moreover, the said mask holder 6 is equipped with the vapor deposition apparatus of Claim 2 provided with the temperature control part which has the temperature control part 9C outside the said film-forming chamber 30.

Further, the mask holder 6 is configured to be detachably attached to the temperature control section and the temperature control section 9C so that the film formation chamber 30 and the exchange chamber 31 can be moved freely. It relates to a deposition apparatus.

In addition, in the deposition chamber 30, the deposition material evaporated from the evaporation source 1 is deposited on the substrate 4 through the mask opening 3 of the deposition mask 2, and then deposited on the deposition mask 2. A vapor deposition apparatus in which a vapor deposition film having a film formation pattern defined by the above is formed on a substrate 4, wherein the evaporation source 1 is disposed between the evaporation source 1 and the substrate 4 disposed to face the evaporation source 1. Mask holder 6 having a scattering restriction part provided with a limiting opening part 5 for restricting the scattering direction of evaporated particles of the film forming material evaporated from the film forming material, and the substrate 4 and the substrate 4 The deposition mask 2 disposed in a spaced apart state is placed, and the substrate 4 is attached to the mask holder 6 and the evaporation source 1 on which the deposition mask 2 is placed. 2) can be configured to move relative to each other while maintaining the separation state, The load lock chamber 32 in which the mask holder 6 to which the screed 2 is attached can travel to and from the deposition chamber 30, and the mask holder 6 to which the deposition mask 2 is attached is the load lock chamber. And an exchange chamber (31) having a waiting chamber (33) capable of coming and going and a cleaning chamber (37) for cleaning the deposition mask (2) and the mask holder (6). It is about.

Moreover, the said washing chamber 37 is related with the vapor deposition apparatus of Claim 4 provided with the liquid tank 38 in which the washing | cleaning liquid was stored.

Moreover, the said exchange chamber 31 is related with the vapor deposition apparatus of Claim 5 provided with the rinse chamber 40 which has the liquid tank 41 in which the rinse liquid was stored.

Moreover, the cleaning or rinsing of at least one of the said deposition mask 2 and the said mask holder 6 relates to the vapor deposition apparatus of Claim 6 characterized by performing while using an ultrasonic wave together.

Moreover, at least one of the washing | cleaning liquid and the rinse liquid relates to the vapor deposition apparatus of Claim 6 comprised so that a liquid amount or temperature may be controlled by the solution control mechanism provided in the said washing | cleaning chamber or outside the rinsing chamber.

Moreover, it is related with the vapor deposition apparatus of Claim 4 which provided the drying mechanism which cleans and drys at least one of the said vapor deposition mask 2 and the said mask holder 6 after cleaning.

Moreover, the said mask holder 6 is related with the vapor deposition apparatus of Claim 4 provided with the temperature control part which has the temperature control part 9C outside the said film-forming chamber 30.

The mask holder 6 is configured to be detachably attached to a temperature control unit and a temperature control unit 9C so that the film formation chamber 30 and the exchange chamber 31 can be moved freely. It relates to a deposition apparatus.

In addition, in the deposition chamber 30, the deposition material evaporated from the evaporation source 1 is deposited on the substrate 4 through the mask opening 3 of the deposition mask 2, and then deposited on the deposition mask 2. A vapor deposition apparatus in which a vapor deposition film having a film formation pattern defined by the above is formed on a substrate 4, wherein the evaporation source 1 is disposed between the evaporation source 1 and the substrate 4 disposed to face the evaporation source 1. Mask holder 6 having a scattering restriction part provided with a limiting opening part 5 for restricting the scattering direction of evaporated particles of the film forming material evaporated from the film forming material, and the substrate 4 and the substrate 4 The deposition mask 2 disposed in a spaced apart state is placed, and the substrate 4 is attached to the mask holder 6 and the evaporation source 1 on which the deposition mask 2 is placed. 2) can be configured to move relative to each other while maintaining the separation state, The load lock chamber 32 in which the mask holder 6 to which the screed 2 is attached can travel to and from the deposition chamber 30, and the mask holder 6 to which the deposition mask 2 is attached is the load lock chamber. A waiting room 33 which can come and go 32, a cleaning chamber 37 for cleaning the mask holder 6 on which the deposition mask 2 is attached, and the deposition mask 2 and the mask holder 6 It is related with the vapor deposition apparatus characterized by including the exchange chamber 31 which has the material peeling recovery chamber 43 which peels and collect | recovers and collect | recovers the material attached to at least one of these.

Moreover, the material peeling mechanism of the said material peeling recovery chamber 43 is related with the vapor deposition apparatus of Claim 12 using dry ice blast.

Further, the material peeling recovery chamber 43 relates to a vapor deposition apparatus according to claim 13, comprising a clean air introduction mechanism and a clean air and a carbon dioxide exhaust mechanism.

Further, when the material attached to the deposition mask 2 is peeled off using the dry ice blast, a mask adsorption plate 47 is attached to the substrate 4 side of the deposition mask 2. It relates to a vapor deposition apparatus.

Moreover, the said mask adsorption plate 47 is related with the vapor deposition apparatus of Claim 15 which is any one of a magnetic plate, an electromagnet plate, and an electrostatic plate.

The material peeling recovery chamber 43 is further provided with a suction mechanism for sucking the material peeled off by the material peeling mechanism and a discharge mechanism for collecting the sucked material and discharging it out of the exchange chamber 31. It relates to the vapor deposition apparatus of 12 base materials.

Moreover, the said mask holder 6 is related with the vapor deposition apparatus of Claim 12 provided with the temperature control part which has the temperature control part 9C outside the said film-forming chamber 30.

The mask holder 6 is configured such that the temperature control section and the temperature control section 9C are detachably attached to each other so that the film formation chamber 30 and the exchange chamber 31 can be moved freely. It relates to a deposition apparatus.

Moreover, the said exchange chamber 31 is related with the vapor deposition apparatus of Claim 1 characterized by providing in the horizontal direction orthogonal to the relative movement direction of the said board | substrate 4 of the said film-forming chamber 30.

Moreover, the said mask holder 6 formed the shape of the said restriction | limiting opening part 5 in the shape which formed the opening area of the said evaporation source 1 side smaller than the opening area of the said board | substrate 4 side, It is characterized by the above-mentioned. It relates to the vapor deposition apparatus of Claim 1.

Moreover, it is related with the vapor deposition apparatus of Claim 1 which used the said film-forming material as an organic material.

Furthermore, the vapor deposition method of the film-forming pattern defined by the said vapor deposition mask 2 is formed on the said board | substrate 4 using the vapor deposition apparatus in any one of said Claims 1-22. will be.

Since the present invention has been configured as described above, the deposition pattern by the deposition mask is widely used by relatively moving the substrate in a spaced apart state even with a deposition mask smaller than the substrate without increasing the deposition mask with the enlargement of the substrate. It is possible to deposit the deposited film of the film, and to move relatively in spaced state, so that the structure can be easily and efficiently deposited. In addition, even when spaced apart, a limiting opening is provided between the evaporation source and the deposition mask. By restricting the scattering direction of the particles to prevent the overlapping of the deposition pattern without passing the evaporated particles from the evaporation openings in the adjacent or distant positions, the deposition mask is brought into contact with the mask holder having the scattering restriction provided with the restriction opening. The construction in which the deposition mask is attached A load lock chamber in which a scholder can travel to and from the deposition chamber, a waiting room in which the mask holder in which the deposition mask is attached, and a draw chamber in which the deposition mask is attached to the outside of the apparatus; By providing the exchange chamber which has a vapor deposition mask, the mask holder in which the vapor deposition mask was attached can move between a load lock chamber, a waiting chamber, and a taking out chamber, making it easy to insert and take out a vapor deposition mask, and stop the film-forming process accompanying exchange of a mask holder. The time is shortened, the operation rate of the vapor deposition apparatus is improved, and the vapor deposition apparatus and the vapor deposition method which can perform high-definition vapor deposition while having a structure which relatively moves a board | substrate and a vapor deposition mask to a spaced state are provided.

In particular, in the manufacture of organic EL devices, it is possible to cope with the increase in size of the substrate, and the deposition of the organic light emitting layer can be carried out with high precision, and the damage of the substrate, the deposition mask, and the deposition film due to the mask contact can be prevented. As a result, a vapor deposition apparatus and a vapor deposition method for organic EL device production that can achieve high-definition vapor deposition are provided.

Moreover, in invention of Claim 2, when the mask holder is equipped with the temperature control part which has a temperature control part outside a film-forming chamber, the temperature of a mask holder can be kept constant and the thermal expansion of the deposition mask provided in the mask holder is suppressed. Thus, the film formation pattern can be deposited with high accuracy.

In addition, in the invention described in claim 3, for example, the media conveying path between the temperature control section of the mask holder and the temperature control section outside the film formation chamber is detachably attached, so that the film formation chamber and the load lock chamber can be freely opened even if the mask holder has a temperature control mechanism. You can come and go.

In addition, in the invention according to claim 4, the cleaning chamber is provided in the exchange chamber instead of the load lock chamber, the waiting chamber, and the extraction chamber, so that the mask holder having the deposition mask attached thereto can be cleaned in the exchange chamber without being carried out of the exchange chamber.

In addition, in the invention of claim 5, the deposition mask and the mask holder are immersed and washed in the liquid tank in which the cleaning liquid is stored, so that the cleaning liquid is widely spread to the details and can be cleaned to every corner.

In addition, in the invention according to claim 6, the cleaning liquid remaining in the deposition mask and the mask holder can be removed by providing the rinse chamber in parallel with the cleaning chamber.

Moreover, in invention of Claim 7, the cleaning effect is improved by immersing a vapor deposition mask and a mask holder in the liquid tank in which the solution was stored, and using an ultrasonic wave together.

Moreover, in invention of Claim 8, at least one of a washing | cleaning liquid and a rinse liquid is equipped with a solution control mechanism outside a washing | cleaning chamber, and can adjust liquid amount and temperature of a solution from the outside of a washing | cleaning chamber or a rinse chamber, and is excellent in practicality.

Moreover, in invention of Claim 9, by providing a drying mechanism, time until the reuse of a vapor deposition mask and a mask holder can be shortened.

Moreover, in invention of Claim 10, 11, it is excellent in further practicality by making into the structure of the invention of Claim 2, 3 equipped with the cleaning chamber in the exchange chamber.

In addition, in the invention according to claim 12, by providing a material release recovery chamber in the exchange chamber in addition to the load lock chamber, the waiting chamber, and the cleaning chamber, reuse of the material attached to the deposition mask and the mask holder is enabled, and the material use efficiency is improved. .

Moreover, in invention of Claim 13, peeling off the film-forming material adhering to a vapor deposition mask or a mask holder with a dry ice blast, the decomposition | disassembly of material is suppressed and the reuse rate of film-forming material improves.

Furthermore, in the invention according to claim 14, the material peeling recovery chamber includes a clean air introduction mechanism and a clean air and a carbon dioxide exhaust mechanism to release the film deposition material attached to the deposition mask or the mask holder with a dry ice blast. Deterioration of the film-forming material can be prevented, and the peeling effect can be maximized by managing the inside of the material peeling recovery chamber at an appropriate pressure.

Further, in the invention of claim 15, the deposition mask is formed of a thin foil, and if the film deposition material adhered to the dry ice blast of claim 13 is peeled off, the deposition mask may be damaged. Damage to the deposition mask is prevented by placing a mask adsorption plate on the back side of the deposition mask during blasting.

Further, in the invention of claim 16, by forming a mask adsorption plate on the back of the deposition mask of claim 15 from a magnetic plate, an electromagnet plate, or an electrostatic plate, the adhesion between the deposition mask and the back plate is improved, and the damage of the deposition mask is further reduced. It can prevent.

Moreover, in invention of Claim 17, by providing a material suction mechanism in a material peeling collection chamber, the peeled material can be collect | recovered efficiently, the mechanism which collects the sucked material, and discharges it out of the material peeling collection chamber is provided. By doing so, the material can be taken out without opening the material peeling recovery chamber to the atmosphere, and the operation rate of the peeling and recovery step is improved.

Moreover, in invention of Claim 18, 19, it is excellent in further practicality by making it the structure provided with the material peeling collection chamber in the invention of Claim 10, 11.

In addition, in the invention described in claim 20, the exchange chamber is arranged parallel to the film formation chamber in the horizontal direction orthogonal to the relative moving direction of the substrate, whereby the exchange of the deposition mask and the mask holder is efficient and space can be saved.

Furthermore, in the invention described in claim 21, since the opening area for the restriction of the mask holder is formed to have a shape in which the opening area on the evaporation source side is smaller than the opening area on the substrate side, the opening for limiting the evaporated particles of the film-forming material evaporated from the evaporation source. It is possible to capture more on the evaporation source side of the film, thereby reducing the film forming material adhering to the restriction opening side surface, and the peeling and recovery of the deposited film forming material after replacing the mask holder becomes easy.

Moreover, in invention of Claim 22, it becomes the evaporation apparatus of organic material, and is further excellent in practicality.

Moreover, in invention of Claim 23, it becomes the outstanding vapor deposition method which exhibits the said effect and effect.

1 is a schematic explanatory diagram of a vapor deposition apparatus in Example 1. FIG.
FIG. 2 is a plan view for explaining a film formation chamber and an exchange chamber in Example 1. FIG.
3 is a side view illustrating an exchange chamber of the second embodiment.
4 is a side view illustrating the exchange chamber of the third embodiment.
5 is a side view illustrating another configuration example of the exchange chamber of the third embodiment.
6 is a side view illustrating an exchange chamber of the fourth embodiment.
It is explanatory drawing of the moving mechanism of the dry ice injection part of Example 4. FIG.
8 is an explanatory diagram of a mask suction plate of Example 4. FIG.

DESCRIPTION OF EMBODIMENTS Embodiments of the present invention considered to be suitable will be described briefly with the operation of the present invention based on the drawings.

In FIG. 1, the film-forming material evaporated from the evaporation source 1 passes through the limiting opening 5 of the mask holder 6 configured as the scattering limiting portion, and passes through the mask opening 3 of the deposition mask 2. It deposits on (4), and the vapor deposition film of the film-forming pattern defined by this vapor deposition mask 2 is formed on the board | substrate 4. As shown in FIG.

At this time, the substrate 4 and the deposition mask 2 are disposed in a spaced apart state, and the substrate 4 is disposed while being spaced apart from the deposition mask 2 or the evaporation source 1. By forming it so that a movement is possible and relatively moving this board | substrate 4, the vapor deposition film of the film-forming pattern defined by this vapor deposition mask 2 is formed on the board | substrate 4 in the range larger than the vapor deposition mask 2 itself. do.

Moreover, the mask holder which has the scattering restriction part which provided the said restriction | limiting opening part 5 which restricts the scattering direction of the evaporation particle of the film-forming material evaporated from the evaporation source 1 between this vapor deposition mask 2 and the evaporation source 1. (6) is provided and formed even when the deposition mask 2 and the substrate 4 are separated from each other without passing the evaporated particles from the evaporation opening 8 at the position adjacent or separated by the restriction opening 5. This prevents the pattern from overlapping.

Further, for example, the deposition mask 2 is bonded to the mask holder 6 constituting the scattering restricting portion to be attached thereto, and at least one of the mask holder 6 and the deposition mask 2 is provided with a deposition mask ( In the case of providing the temperature control mechanism 9 that maintains the temperature of 2), the incidence of heat from the evaporation source 1 is suppressed, so that the temperature rise of the mask holder 6 or the deposition mask 2 is suppressed, and further deposition is carried out. Even when the mask 2 is spaced apart from the substrate 4, the mask 2 is joined to the mask holder 6 so that the heat of the deposition mask 2 is conducted to the mask holder 6, thereby bringing the deposition mask 2 to a constant temperature. The temperature holding function to maintain is improved.

Therefore, the mask holder 6 which has this scattering restriction part is also in charge of temperature holding function with the restriction | limiting function of the scattering direction of evaporation particle, and can suppress the temperature rise of the vapor deposition mask 2, It is maintained at a constant temperature, and it becomes difficult to produce distortion of the deposition mask 2 due to heat.

Therefore, the substrate 4 is moved relative to the deposition mask 2, the mask holder 6 on which the deposition mask 2 is placed, and the evaporation source 1 while being kept apart from the deposition mask 2. Thus, the deposition film of the film-forming pattern by the deposition mask 2 is continued in this relative movement direction, so that the deposition film is extensively formed even with the deposition mask 2 smaller than the substrate 4, and the evaporation port portion at the adjacent or separated position ( The overlapping degree of the film formation pattern due to the incident light from 8), the distortion caused by the heat, etc. are also sufficiently suppressed to form a vapor deposition apparatus capable of performing high-definition deposition.

In addition, the mask holder 6 on which the deposition mask 2 is attached has an exchange chamber having a load lock chamber capable of traveling to and from the deposition chamber, whereby the mask holder 6 can be exchanged without exposing the deposition chamber to the atmosphere. Input and extraction of the vapor deposition mask 2 (mask holder 6) becomes easy, the stop time of the film-forming process accompanying exchange of the mask holder 6 becomes short, and the operation rate of a vapor deposition apparatus improves. In addition, when the cleaning chamber is provided in the exchange chamber, for example, it is possible to clean the inside of the exchange chamber without carrying out the mask holder 6 to the outside of the apparatus, so that the exchange of the mask holder 6 can be performed more efficiently. In addition, for example, when the material peeling recovery chamber is provided in the exchange chamber, it is possible to recover and reuse the material peeled from the deposition mask 2 and the mask holder 6 at the time of material cleaning, thereby improving the material use efficiency.

Example  One

A first embodiment of the present invention will be described with reference to the drawings.

1 is a schematic explanatory diagram of a vapor deposition mechanism.

The present embodiment deposits a deposition material evaporated from the evaporation source 1 (eg, an organic material for manufacturing an organic EL device) on the substrate 4 through the mask opening 3 of the deposition mask 2, In the vapor deposition apparatus comprised so that the vapor deposition film of the film-forming pattern defined by this vapor deposition mask 2 may be formed on the board | substrate 4, the board | substrate 4 and the vapor deposition mask 2 will be arrange | positioned at a spaced state, and this board | substrate 4 The mask holder 6 and the evaporation source 1 constituted as the scattering limiting part provided with the vapor deposition mask 2, the restriction | limiting opening part, are comprised so that relative movement is possible, maintaining the spaced state with the vapor deposition mask 2, By this relative movement, a vapor deposition film having a film formation pattern defined by the vapor deposition mask 2 is formed on the substrate 4 in a wider range than the vapor deposition mask 2.

In addition, between the vapor deposition mask 2 and the evaporation source 1, a limiting opening part 5 for restricting the scattering direction of evaporated particles of the film-forming material evaporated from the evaporation port part 8 of the evaporation source 1 provided in plural. By providing a mask holder 6 configured as a scattering restricting portion provided with a scattering restricting portion, by restricting the evaporating particles having a large scattering angle θ, the evaporating particles from the evaporation port portion 8 adjacent or separated are prevented from passing. .

That is, as a structure which deposits by the evaporation particle from the some evaporation opening part 8, it can deposit on the large area board | substrate 4, and the evaporation opening part of the position adjacent or separated by the restriction | limiting opening part 5 is carried out. It is comprised so that incidence from (8) may be prevented, and even if a deposition mask 2 and the board | substrate 4 are in a spaced state, superposition of a film-forming pattern is also prevented.

Moreover, each evaporation port part 8 provided in the horizontal direction is provided in the front-end | tip of the introduction part 28 which protruded in the said horizontally long diffusion part 27 of the said evaporation source 1, and the periphery of this introduction part 28 is carried out. Alternatively, a heat shield 19 for blocking the heat of the evaporation source 1 is disposed between the inlet portions 28. Reference numeral 26 denotes an evaporation particle generator (crucible).

This heat shield 19 should just shield heat, but the present embodiment employs a cooling plate and has a medium path for supplying a cooling medium, while the cooling medium loses heat from the evaporation source 1. The heat exchange part which exchanges this heat | fever is passed through and the heat shielding effect is improved.

2 is a plan view of the deposition chamber 30 and the exchange chamber 31.

The exchange chamber 31 is provided in parallel with the deposition chamber 30 in which the above-described deposition mechanism is provided in the horizontal direction perpendicular to the relative movement direction of the substrate 4, and the deposition mask having the material after deposition in the deposition chamber 30 adhered thereto. By constructing (2) and the mask holder 6 so as to be interchangeable with the new or cleaned deposition mask 2 and the mask holder 6, it becomes a highly productive vapor deposition apparatus which can be operated continuously for a long time.

Specifically, the deposition mask 2 and the mask holder 6 are used for film formation in the deposition chamber 30, and materials are deposited on the deposition mask 2 (and the mask holder 6) one after another. Therefore, it is necessary to replace it regularly so as not to affect the film formation pattern and to suppress the generation of dust due to the peeling of the deposited film.

Example 2

In Example 2, as shown in FIG. 3, the exchange chamber 31 of Example 1 is comprised from the load lock chamber 32, the waiting chamber 33, and the extraction chamber 34. As shown in FIG.

The load lock chamber 32 is provided in succession through the film formation chamber 30 (in the depth direction in FIG. 3), the waiting chamber 33, and the ejection chamber 34 through the gate valve, respectively. In addition, a gate valve for carrying in the deposition mask 2 and the mask holder 6 from the outside is provided in the waiting room 33, and the deposition mask 2 and the mask holder 6 are placed in the extraction chamber 34 outdoors. A gate valve for carrying out is provided.

First, the vapor deposition mask 2 and the mask holder 6 exchanged after vapor deposition move to the load lock chamber 32 in the exchange chamber 31. At this time, when the mask holder 6 has a temperature control section, the temperature control section of the mask holder 6 and (so that the mask holder 6 can travel between the film formation chamber 30 and the load lock chamber 32 ( The medium conveyance path 35 between 9 C of external temperature control parts which were provided outdoors is comprised so that attachment and detachment are possible. That is, when moving the mask holder 6 from the film-forming chamber 30 to the load lock chamber 32, the medium conveyance path 35 (the connection part 36 with the temperature control part of the mask holder 6 of the mask holder 6) is masked. It is comprised so that it may remove from the temperature control part of the holder 6. As shown in FIG. As the temperature control unit, a medium such as a medium through which refrigerant such as water flows can be used, and as the temperature control unit 9C, a heat exchange unit for cooling the refrigerant can be employed.

The vapor deposition mask 2 and the mask holder 6 with the film-forming material moved to the load lock chamber 32 move from the load lock chamber 32 to the take-out chamber 34, and the outlet (the gate for carrying out) of the take-out chamber 34 is moved. To the outside of the exchange chamber 31 from the valve. The vapor deposition mask 2 and the mask holder 6 used for film-forming newly carried in to the waiting room 33 from the inlet (gate valve valve) of the waiting room 33 move to the load lock room 32, and the load lock room is moved. It moves to the film-forming chamber 30 from 32, and is used in a film-forming process.

The deposition mask 2 and the mask holder 6 with the film-forming material taken out of the exchange chamber 31 are cleaned in a cleaning chamber separately provided outside the film-forming chamber to remove contamination of the film-forming material and particles or contaminants attached thereto. It is carried in to the waiting room 33 again, and is moved to the film-forming room 30 via the load lock room 32.

Example  3

In Example 3, as shown in FIG. 4, the exchange chamber 31 of Example 1, 2 is comprised from the load lock chamber 32, the waiting chamber 33, and the washing | cleaning chamber 37. As shown in FIG.

As in the second embodiment, the deposition mask 2 and the mask holder 6 to be replaced after deposition move to the load lock chamber 32 in the exchange chamber 31, and the cleaning chamber 37 provided in the load lock chamber 32. ), And are cleaned. The deposition mask 2 and the mask holder 6 after cleaning are moved to the waiting chamber 33 via the load lock chamber 32 to prepare for the next film formation.

The cleaning chamber 37 includes a liquid tank 38 in which the cleaning liquid is stored, and an external cleaning liquid control mechanism 39 provided outside the cleaning chamber to control the liquid amount, temperature, and the like of the cleaning liquid. ) Is immersed in a liquid bath and washed. At this time, when the ultrasonic wave is used in combination, the cleaning effect is improved.

Moreover, in order to vaporize the residual washing | cleaning liquid adhering to the vapor deposition mask 2 and the mask holder 6 after washing | cleaning, when a drying mechanism is provided in the washing | cleaning chamber 37, further practicality is excellent.

In addition, when the rinsing process is performed after the deposition mask 2 with the deposition material 2 and the mask holder 6 are cleaned, as shown in FIG. 5, the rinse chamber 40 is provided in parallel with the cleaning chamber 37. do. Reference numeral 41 denotes a liquid tank in which a rinse liquid is stored, and 42 is an external rinse liquid control mechanism that is provided outside the rinse chamber and controls the amount and temperature of the rinse liquid. After the cleaning, the deposition mask 2 and the mask holder 6 are rinsed with pure water in the rinse chamber 40, for example, after washing with an organic solvent in the washing chamber 37 to remove the residual washing liquid, and the waiting chamber It may be configured to move to (33) to prepare for the next film formation. The cleaning chamber 37 and the rinse chamber 40 have a solution control mechanism, so that the temperature, amount, and the like of the cleaning liquid can be managed from the outside, and are excellent in practicality.

Moreover, by providing a distillation mechanism in the external solution control mechanism of the washing | cleaning chamber 37 and the rinse chamber 40, the solution after washing | cleaning can be isolate | separated, the solution can be reused, and the usage amount can be reduced.

Example  4

In Example 4, as shown in Fig. 6, the exchange chamber 31 of Examples 1 to 3 includes the load lock chamber 32, the material peeling recovery chamber 43, the cleaning chamber 37, and the waiting chamber 33. In Example 4, the material use efficiency is improved by peeling the film forming material from the deposition mask 2 and the mask holder 6 to which the material after film deposition is attached, recovering the peeled material, and reusing it. I am made to become the composition.

At the time of exchange, the deposition mask 2 and the mask holder 6 to be replaced with the deposition material are replaced with the mask unit A, and the deposition mask 2 and the mask holder 6 to be used next are the mask unit B. Referring to the flow, first, the mask unit A moves from the film formation chamber 30 to the load lock chamber 32 and moves from the load lock chamber 32 to the material peeling recovery chamber 43. The mask unit B moves from the waiting room 33 to the load lock chamber 32 and moves from the load lock chamber 32 to the film formation chamber 30. The mask unit A moved to the material peeling recovery chamber 43 moves to the cleaning chamber 37 after the material peeling step. Alternatively, it may be moved to the load lock chamber 32, moved from the load lock chamber 32 to the waiting room 33, and moved from the waiting room 33 to the cleaning chamber 37. After the cleaning, the mask unit A moves to the waiting room 33 to prepare for the next replacement.

Peeling of the film-forming material adhering to the vapor deposition mask 2 and the mask holder 6 in the material peeling recovery chamber 43 is performed using a dry ice blast. The dry ice blast is peeled off by the kinetic energy by spewing dry ice pellets at high speed, the thermal shock due to low temperature, and the sublimation energy when the dry ice enters and rapidly vaporizes with the base metal, but is, for example, plasma, ultraviolet ray, ozone Compared with dry cleaning methods, such as a laser, there exists an advantage that an organic material does not decompose well. For this reason, although there are various methods of peeling an organic material from a base material, dry ice blasting is preferable when peeling the organic material adhering and using it as a film-forming material again.

The vapor deposition mask 2 and the mask holder 6 irradiate dry ice from the evaporation source side because a large number of evaporated particles adhere to the surface on the evaporation source side. Moreover, the evaporation source 1 of the mask holder 6 is formed by making the shape of the restriction | limiting opening part 5 of the mask holder 6 into the shape whose opening area on the evaporation source 1 side is smaller than the opening area on the board | substrate 4 side. Since many film-forming materials are affixed on the surface on the side of), peeling of most of the film-forming materials adhered becomes easy. Moreover, in order to be able to irradiate dry ice to the mask unit whole surface in the horizontal direction orthogonal to the relative movement direction of the board | substrate 4, as shown in FIG. 7, the tip part which irradiates dry ice (dry ice) The injection section 44 is a moving mechanism. Reference numeral 45 is a dry ice generator, and 46 is an injection unit moving mechanism. In addition, since the vapor deposition mask 2 is thin thin and may be damaged when dry ice blasting is performed, as shown in FIG. 8, the mask adsorption plate which consists of a magnetic plate, an electromagnet plate, or an electrostatic plate ( 47, a moving mechanism is provided, and it can be comprised so that it may be stuck to the vapor deposition mask 2, and it adhere | attaches with a vapor deposition mask at the time of dry ice blasting, so that a vapor deposition mask is not damaged.

In addition, the film-forming material peeled from the vapor deposition mask 2 and the mask holder 6 is collect | recovered by the material recovery mechanism 17. FIG. The material recovery mechanism 17 is disposed below the mask holder 6 so that the peeled material falls and is accommodated in the material recovery mechanism 17. In addition, although dry ice blasting is performed in clean air, in order to improve a material recovery function, the clean air introduction mechanism is provided in the upper part of the material peeling recovery chamber 43, and an exhaust mechanism is provided in the lower part of the material recovery mechanism 17. We do with configuration to say. This is caused by exhausting carbon dioxide vaporized by the clean air and dry ice into an exhaust mechanism disposed in the material recovery mechanism 17 while introducing clean air from the upper portion of the material separation recovery chamber 43. While maintaining the pressure of 43, the gas flow passes through the material recovery mechanism 17, so that the film formation material scattered in the material peeling recovery chamber 43 can also be captured.

In addition, the material recovery mechanism 17 is configured to be detachable from the material peeling recovery chamber 43 so that the recovered material can be taken out of the exchange chamber without opening the material peeling recovery chamber 43 to the atmosphere.

The cleaning process in the subsequent cleaning chamber 37 is performed for the purpose of removing the film-forming material, particles and contaminants that could not be removed in the material peeling process, and a wet process using a cleaning liquid is suitable in the same manner as the cleaning method described above. In addition, since the vapor deposition mask 2 and the mask holder 6 with a film-forming material perform liquid cleaning after the material peeling process, a small amount of material adhered to the vapor deposition mask 2 and the mask holder 6 before cleaning. For this reason, the material which melt | dissolves in a washing | cleaning liquid also becomes small, the refilling / exchange cycle of a washing | cleaning liquid becomes long, and it becomes a vapor deposition apparatus with little environmental load.

In addition, this invention is not limited to Examples 1-4, The specific structure of each structural requirement can be designed suitably.

Claims (23)

A deposition apparatus in which a deposition material evaporated from an evaporation source is deposited on a substrate through a mask opening of a deposition mask, and a deposition film having a film formation pattern defined by the deposition mask is formed on the substrate. A mask holder having a scattering limiting portion provided with a limiting opening for restricting the scattering direction of evaporated particles of the film forming material evaporated from the evaporating source is disposed between the substrates disposed opposite to the evaporating source, and placed in the mask holder. The deposition mask arranged to be spaced apart from the substrate is placed, and the substrate is moved relative to the mask holder and the evaporation source on which the deposition mask is placed while being spaced apart from the deposition mask. The mask holder in which the deposition mask is attached is configured to be configured to be capable of And an exchange chamber having a load lock chamber capable of coming and going, a mask chamber having the deposition mask attached thereto, and a waiting room capable of coming and going with the load lock chamber, and an extraction chamber capable of taking out the mask holder having the deposition mask installed outside the apparatus. Deposition apparatus, characterized in that. The vapor deposition apparatus according to claim 2, wherein the mask holder includes a temperature control unit having a temperature control unit outside the deposition chamber. The vapor deposition apparatus according to claim 2, wherein the mask holder is configured to be detachably attached to a temperature control unit and a temperature control unit so that the film formation chamber and the exchange chamber can move freely. A deposition apparatus in which a deposition material evaporated from an evaporation source is deposited on a substrate through a mask opening of a deposition mask, and a deposition film having a film formation pattern defined by the deposition mask is formed on the substrate. A mask holder having a scattering limiting portion provided with a limiting opening for restricting the scattering direction of evaporated particles of the film forming material evaporated from the evaporating source is disposed between the substrates disposed opposite to the evaporating source, and placed in the mask holder. The deposition mask disposed to be spaced apart from the substrate is disposed, and the substrate is configured to be relatively movable with respect to the mask holder and the evaporation source on which the deposition mask is placed while being spaced apart from the deposition mask. And the mask holder in which the deposition mask is attached is connected to the deposition chamber. And an exchange chamber having a load lock chamber, a waiting chamber through which the mask holder on which the deposition mask is attached, can come and go with the load lock chamber, and a cleaning chamber for cleaning the deposition mask and the mask holder. . The vapor deposition apparatus according to claim 4, wherein the cleaning chamber includes a liquid tank in which a cleaning liquid is stored. The vapor deposition apparatus according to claim 5, wherein the exchange chamber includes a rinse chamber having a liquid tank in which a rinse liquid is stored. The vapor deposition apparatus according to claim 6, wherein cleaning or rinsing at least one of the vapor deposition mask and the mask holder is performed while using an ultrasonic wave. The vapor deposition apparatus according to claim 6, wherein at least one of the cleaning liquid and the rinse liquid is configured such that the liquid amount or temperature is controlled by a solution control mechanism provided outside the cleaning chamber or outside the rinsing chamber. The vapor deposition apparatus of Claim 4 provided with the drying mechanism which cleans and drys at least one of the said vapor deposition mask and the said mask holder. The vapor deposition apparatus according to claim 4, wherein the mask holder includes a temperature control unit having a temperature control unit outside the deposition chamber. The vapor deposition apparatus according to claim 10, wherein the mask holder is configured to be detachably attached to a temperature control unit and a temperature control unit so that the film formation chamber and the exchange chamber can move freely. A deposition apparatus in which a deposition material evaporated from an evaporation source is deposited on a substrate through a mask opening of a deposition mask, and a deposition film having a film formation pattern defined by the deposition mask is formed on the substrate. A mask holder having a scattering limiting portion provided with a limiting opening for restricting the scattering direction of evaporated particles of the film forming material evaporated from the evaporating source is disposed between the substrates disposed opposite to the evaporating source, and placed in the mask holder. The deposition mask disposed to be spaced apart from the substrate is disposed, and the substrate is configured to be relatively movable with respect to the mask holder and the evaporation source on which the deposition mask is placed while being spaced apart from the deposition mask. And the mask holder in which the deposition mask is attached is connected to the deposition chamber. A load lock chamber, a waiting chamber in which the mask holder on which the deposition mask is attached may come and go with the load lock chamber, a cleaning chamber for cleaning the mask holder on which the deposition mask is attached, and at least one of the deposition mask and the mask holder. A vapor deposition apparatus comprising: an exchange chamber having a material separation recovery chamber for peeling and recovering a material attached to one. The vapor deposition apparatus according to claim 12, wherein a dry ice blast is used for the material peeling mechanism of the material peeling recovery chamber. The vapor deposition apparatus according to claim 13, wherein the material peeling recovery chamber includes a clean air introduction mechanism and a clean air and a carbon dioxide exhaust mechanism. The vapor deposition apparatus according to claim 13, wherein a mask adsorption plate is attached to the substrate side of the vapor deposition mask when the material adhered to the vapor deposition mask is peeled off using the dry ice blast. The vapor deposition apparatus according to claim 15, wherein the mask adsorption plate is any one of a magnetic plate, an electromagnet plate, and an electrostatic plate. The vapor deposition apparatus according to claim 12, wherein the material peeling recovery chamber includes a suction mechanism for sucking the material peeled off by the material peeling mechanism and a discharge mechanism for collecting the sucked material and discharging it out of the exchange chamber. The vapor deposition apparatus according to claim 12, wherein the mask holder includes a temperature control unit having a temperature control unit outside the deposition chamber. 19. The vapor deposition apparatus according to claim 18, wherein the mask holder is configured to be detachably attached to a temperature control unit and a temperature control unit so that the film formation chamber and the exchange chamber can move freely. The vapor deposition apparatus according to claim 1, wherein the exchange chamber is arranged in a horizontal direction orthogonal to a relative movement direction of the substrate of the film formation chamber. The vapor deposition apparatus according to claim 1, wherein the mask holder is formed in a shape of the restriction opening in a shape in which the opening area on the evaporation source side is smaller than the opening area on the substrate side. The vapor deposition apparatus according to claim 1, wherein the film forming material is an organic material. The vapor deposition method of Claim 1 to 22 using the vapor deposition apparatus as described in any one of the above, and forming the vapor deposition film of the film-forming pattern defined by the said vapor deposition mask on the said board | substrate.

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