JPS6220321A - Processor - Google Patents

Abstract

PURPOSE:To largely reduce a reaction product to be bonded to the inner wall of a vessel by providing the accumulation of the product movable to a load locking chamber in the vessel. CONSTITUTION:A cover (reaction product accumulator) 13 supported by a wafer- cooled cylinder 12 is so disposed as to surround electrodes 6, 7 around a processor having an anode 6 and a cathode 7. Since nonvolatile reaction product of the type produced by etching is selectively bonded and accumulated on the cover 13 disposed around the processor, it can effectively suppress the bonding to the electrodes 6, 7 of the processor and the wall of the vessel. Thus, it can prevent a foreign material from being bonded to the surface of a wafer due to the bonded material to improve the etching accuracy.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a technique that is effective when applied to a wafer processing apparatus, particularly a dry etching apparatus.

[Background technology]

The manufacturing process of semiconductor devices includes a so-called wafer processing process. One of these processes is a so-called dry etching process in which wiring is formed on the surface of the wafer, for example.

The above-mentioned dry etching can be carried out using, for example, an apparatus consisting of a vacuum vessel equipped with a processing section constituted by opposing electrodes. At that time, the wafer is placed on the cathode of the processing section, and the ionized reaction gas is accelerated in the electric oven by a high frequency power supply connected to one of the electrodes, thereby achieving etching of the metal etc. on the wafer. be done.

By the way, when dry etching is performed as described in Section 2, a high frequency is applied to a reactive gas such as halogenated carbon to convert it into ions or radicals, which react with the metal in the area to be etched to form the metal. It is used for removal. Therefore, various reaction products are inevitably generated and adhere to the inner wall of the container of the apparatus.

By repeating the etching operation, the reaction deposits gradually accumulate and become easy to peel off. When this reaction deposit is peeled off, it is deposited as foreign matter and causes defects in circuit patterns and the like. Therefore, it is necessary to periodically clean the inside of the container, but the inventor found that this cleaning work requires a high level of cleanliness and takes a long time, which poses a problem in terms of work efficiency. .

Regarding the dry etching equipment,
January 20th, Published by Kogyo Kenkyukai Co., Ltd. [Electronic Materials J19
It is explained in the November 1984 special edition, pages 97 to 101.

[Purpose of the invention]

An object of the present invention is to provide a technology that can maintain and improve the cleanliness inside a processing container in a processing apparatus.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

That is, in a processing apparatus in which a processing section is installed in a container having a load-lock chamber, by providing a reaction product accumulation section in the container that can be moved to the load-lock chamber, reaction products generated during processing can be collected. The accumulation part is selectively attached to the accumulation part to suppress adhesion to other parts, and the accumulation part to which the reaction products have adhered is transferred to the load lock chamber and removed without breaking the vacuum of the container body, and then the adhesion is removed. By being able to remove the reaction product and return it to its original position, it is possible to greatly reduce the adhesion of the reaction product to the inner wall of the container, etc., thereby achieving the above object.

〔Example〕

FIG. 1 is a schematic front view showing a dry etching apparatus (processing apparatus) according to an embodiment of the present invention, and the container is shown in cross section at approximately the center of the apparatus.

The container in the apparatus of this embodiment is composed of an etching chamber 1, a load lock chamber 2 located around the lower side of the etching chamber 1, and a load lock chamber 3 for supplying wafers on the right side thereof.

Gates 4 and 5, which can be opened and closed, are formed between the etching chamber 1 and the load-lock chamber 2, and between the load-lock chamber 3, and the load-lock chamber 2.
4a and 5a, respectively.
is formed.

At approximately the center of the etching chamber 1, there is a processing section consisting of two parallel plate electrodes, an anode 6 and a cathode 7.

The cathode 7 is a susceptor for the wafer 8, and a support shaft 9 whose other end extends outside the container is attached to the back surface of the cathode 7.

This support shaft also has the function of a water-cooled cylinder, and a water supply section 9a and a drainage section 9b are formed outside the container. Further, this cathode 7 is electrically connected to a high frequency power source 11 via a matching box 10.

A cover (reaction product accumulation section) I3 supported by a water-cooled cylinder 12 is arranged around the processing section consisting of the anode 6 and cathode 7 so as to surround these electrodes 6 and 7. This water-cooled cylinder 12 has a load lock chamber 2.
It is formed to be able to slide vertically through the bottom of the cylinder, and its end is connected and fixed to a piston rod 14 of a pneumatic cylinder (not shown) which is a vertical drive unit. Further, the water cooling cylinder 12 on the outside is formed with a water supply section 12a and a drainage section 12b.

Next, the operation of the etching apparatus of this embodiment will be explained.

First, the gate 5a of the load-lock chamber 3 for supplying wafers is opened, the wafer 8 is placed on the mounting table 14 therein, and after the gate 5a is closed, the load-lock chamber 3 is evacuated.

Next, the gate 5 between the vacuum etching chamber 1 and the load lock chamber 3 is opened, and the wafer 8 is moved onto the cathode 7 of the processing section by a transport means (not shown). At that time, lower the cover 13 to a position where it does not become an obstruction (.

After the cover 13 is placed in the position shown in FIG. to occur. The surface of the wafer 8 is etched by the reactive gas excited by this high frequency energy. At that time, in order to prevent the wafer 8 from overheating,
Cool the cathode 7 and set aside.

Above I7-J? , 'The non-volatile reaction note formation force of the species 11 to 11 is distributed around the processing section;
Koiruka ＼13C: ``Selective?l'': (=J to accumulate 1. Electrode of the processing section (i, 7.9 + container wall surface, etc.) (= effect i to accumulate? 4.' It is something that can be suppressed3
, but at ゛, (due to N1 kimono), the W object on the convex surface (] was 11 r, 2 r 'y g
The goal is to achieve the goal of increasing the amount of energy/glue.

By repeating the above-described 1-notin-re-processing of the wafer 8, the first part of the cover 13-5 inevitably accumulates and becomes a source of foreign matter.

However, the unimplemented item ①1.・After carrying out the esonating process (in 5th case, the predetermined esonating process 4 ma''l'-), the device itself removes the (E1 kimono) of the cover 13-1 in the empty state a=
1. It's easy to do. However, -9, the body itself is purified in 1 room, and the cycle of 11 karma is carried out by the person.
This can be extended to j+.

Then, move the cover 13 down with the water cooling cylinder 12 until it fits into the 1-1-2G droplet chamber.Next, close the game 1-4 and close the game. 148, cut the cover 13 from the tip of the water-cooled cylinder 12 several times, and wash the hakama.) After the purification work is completed, remove the cover 13 from the tip of the water-cooled cylinder 12 again, close the gate 1-4 a, and D.
-, - The inside of the drooping chamber 2 is vacuum bi:: L, , ,
, 7- Open the transfer game 1 and 4 and return to the original position? , put the cover 13 back l-2 (do this).

, r to the main body of the notching chamber 1 by 52 and 7
/ 1 mind,], the influence of - without being cut off, it is completed again.
↑ Start etching a wafer.

When performing the above-mentioned etching under vacuum, the reaction number J: is extremely anti-Lfλ, ('There are many cases where the etching is rich in color). There is a compound zt, but it easily reacts with water 41 etc. in the air when exposed to air, and it reacts easily with aluminum hydroxide and even aluminum oxide etc. when heated.
1: Changes into a substance that is easily dislodged. , second. 1. Sea urchin, the above compound has the property that even if there is a shadow of the outside air gQ, 2, it is likely to cause a wafer + gift 4
have.

Therefore, the actual actual hτl; as in the example device <2. The fact that the cover 13 can be cleaned while the main body of the etching chamber 1 is kept in a vacuum makes it possible to greatly improve the reliability of etching.

〔effect〕

(1) In a processing apparatus in which a processing section is installed in a container having a load-lock chamber, by providing a reaction product accumulation section in the container that can be moved to the load-lock chamber, it is possible to The reaction product can be selectively deposited on the accumulation part to prevent it from adhering to other parts, and the accumulation part after adhesion can be moved to the load lock chamber and removed without breaking the vacuum of the container body. Since the accumulating portion can be purified and returned to the predetermined position, it is possible to delay the reaction product from landing on the inner wall of the container body by a factor of 11.

(2) By being able to remove the reaction product accumulation part without breaking the vacuum of the container body, it is possible to completely eliminate the influence of outside air on the container body, which causes foreign matter generation due to moisture in the air. It can prevent the production of substances.

(3) According to (1) and (2) above, the inside of the container main body can be maintained in a clean state for a long period of time, so that it is possible to prevent foreign matter from adhering to the wafers, and it is possible to improve the accuracy of wafer processing.

(4) By arranging the reaction product accumulation section around the processing section so as to surround it, selective deposition of the reaction products can be promoted.

(5) During dry etching, a large amount of 11 organic, inorganic, or composite compounds that are easily affected by moisture, oxygen, etc. is formed, so the technology according to the present invention It is particularly suitable for application to dry etching equipment.

Although the invention made by the present inventor has been specifically explained based on Examples above, the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Needless to say.

For example, in a dry etching device, the arrangement of the opening, drawer, and seven chambers for removing the cover, and other configurations are not limited to those shown in the embodiments. Needless to say, it may be a structure.

[Application field]

In the above explanation, the invention made by the present inventor was mainly applied to a dry etching device, which is the background field of application, but the invention is not limited thereto. It is an effective technique that can be applied to various processing apparatuses as long as they require processing and perform processing accompanied by the production of non-volatile reactants.

[Brief explanation of the drawing]

FIG. 1 is a schematic front view showing a dry etching apparatus according to an embodiment of the present invention. 1... Etching room, 2, 3... Load lock room,
4.4a, 5.5a...gate, 6...anode,
7...Cathode, 8...Wafer, 9...Spindle, 9
a... Water supply section, 9b... Drainage section, 10... Matching box, 11... High frequency power supply, 12... Water cooling cylinder, 12a... Water supply section, 12b... Drainage section,
13...Cover, 14...Piston Rondo, 15.
... Support shaft, 15a... Gas supply section.

Claims (1)

[Scope of Claims] 1. A processing device comprising a load-lock chamber and a reaction product accumulation section movable to the load-lock chamber in a container in which a processing section is installed. 2. The processing apparatus according to claim 1, wherein the reaction product accumulation section is a cover disposed around the processing section. 3. The processing apparatus according to claim 1, which is a dry etching apparatus.