KR20140036984A - Serial linear thermal processor arrangement - Google Patents

Abstract

Provided is a liner, serial chip/substrate assemble processor for moving a preset assembled chip/die substrate onto a support substrate by a series of sealing chambers which have movable bottom processing sections. A process starts at a loading station and ends at unloading station after various melting and vacuum of chip/substrate components which is supported on a device tray by various types of their chambers until a final combination. [Reference numerals] (AA) Load/lock station

Description

Continuous Linear Heat Treater Array {SERIAL LINEAR THERMAL PROCESSOR ARRANGEMENT}

TECHNICAL FIELD The present invention relates to electronic chips, and to a manufacturing method such as semiconductor substrates, and more particularly, to a stepwise process of a machine used for manufacturing semiconductor substrates.

When a semiconductor device is formed through a plating method, a printing method, and a solder ball melting method, solder bumps are formed on the semiconductor substrate. The solder is melted and bonded to connected material such as wires and conductors. Flux is used in most prior art manufacturing methods using solder, which is deposited on the surface of the terminals and wiring. Flux typically covers the deposited surface to remove oxides or prevent new oxidation when the surface is activated. Typically, the solder melts on the deposited surface and spreads throughout the substrate surface. Part of the flux). Removal of such fluxes is one of the common problems in the prior art. The flux between the die and the substrate cannot be completely eliminated, thus lowering the reliability of the device produced.

Prior art devices are generally flux dispensers, reflow furnaces, and flux washers. Each particular solder material often requires the use of different fluxes and different flux cleaning chemistry. Because of the nature of these materials and chemicals, prior art devices must be made suitable for particular materials and specific chemistries. Because of the nature of the fluxes used in the prior art, they were attached to the processing equipment, making it difficult to clean the equipment. The use of fluxes requires a lot of chemical consumption and a lot of maintenance during the manufacturing process.

In some cases, a vacuum system was used to heat the solder, inject the formic acid, minimize the voids and form solder bumps or solder balls. There are several disadvantages, such as the lack of heat transfer media, by using a vacuum system for solder reflow. The heat transfer coefficient of the solder is low, the concentration of formic acid used to remove surface oxides is low, and heat transfer by convection cannot be used to form solder bumps and balls.

The present invention aims to remedy these disadvantages of the prior art.

It is also an object of the present invention to minimize process steps that may be required for flux application and removal.

The invention also provides a substrate in a series of adjustably controlled, individually processing, generally linearly arranged chambers for space saving, step minimization, and efficient chip processing. It is an object of the present invention to provide a manufacturing arrangement in which the loading, processing and unloading of the dies and dies can be carried out linearly.

The present invention relates to a method of manufacturing solder bumps and solder joints on a semiconductor material. In one aspect, the process includes a production table having at least six in-line treatment stations or positons, a " an " loading station " an " the use of a treatment system having a linearly arranged sequential substrate component processing stations with a treated-component "loading station, and an" treated-component "unloading station; Stations may each include the mechanism shown in US Pat. Nos. 6,827,789, 7,008,879, 7,358,175, incorporated herein.

The linear production disclosed herein incorporates a pre-assembled material component, which must be treated as a semiconductor substrate, respectively, and incorporates various aspects and implementations of the '789 and' 879 patents mentioned above. Arranged to transport components to provide a series of closely spaced station locations that can independently adjust temperature, pressure, and atmosphere as shown in the examples .

An initial station into which devices, such as a semiconductor chip / die substrate assembly, are loaded is designated as a load / lock station for the purpose of defining one aspect of the invention. In the loadlock station, a combination of vertically provided, pre-attached but unsoldering dies and substrates is loaded into a support plate and continuously loaded with nitrogen to reduce the amount of oxygen in the housing or chamber at the current ambient atmospheric pressure. It is enclosed in an enclosed climate controlled chamber that is purged by an enclosed climate controlled chamber. The substrates having solder pads in the load / lock chamber and the solder bumps positioned adjacent to each other are easily pre-attached to each other by, for example, thermal energy or ultrasonic energy. The wafer / die loaded plate is moved to the next location designated station # 1.

In station # 1, a vacuum is provided to the preheated chamber at a temperature of about 150 to 270 ° C., and from about 10 millitorr to about 300 to remove trapped air, moisture, oxygen and by-products from chemical reactions. Melting point of a particular solder used for components of a pre-assembled substrate and chip or die assembly, for about 10 to about 300 seconds, under a vacuum of torr degree Is kept lower. Station # 1 then performs formic acid vapor and nitrogen vent to provide formic acid vapor to the junction or interface of the components.

The support plate, which includes the substrate and the chip or die assembly, is lowered from the enclosure housing and then moved to the next position or next station designated station # 2. In station # 2, a vacuum is provided to the preheated chamber at a temperature of about 150 to 270 ° C., and from about 10 millitorr to about 300 torr (to remove trapped air, moisture, oxygen and chemical reaction byproducts). under a vacuum of torr, for about 10 to about 300 seconds, above the melting point of the particular solder used for the components of the pre-assembled substrate and cip or die assembly Maintained at temperature. Station # 2 then performs formic acid vapor and nitrogen vent to provide formic acid vapor to the junction or interface of the components.

The processing temperatures at these stations are regulated and regulated based on the particular solder characteristics used / required for a particular run of substrates / semiconductors.

The chip / die and substrate assembly on the plate is moved out of station # 2 to the housing or chamber of the next station # 3 by a properly controlled linear advancement of the mechanism in which the support plate is placed. . In station # 3, a vacuum is provided to the preheated chamber at a temperature of about 150 to 270 ° C. Preassembled substrate, chip or die for about 10 to about 300 seconds under vacuum of about 10 millitorr to about 300 torr to remove trapped air, moisture, oxygen and chemical reaction by-products It remains above the melting point of the particular solder used for the components of the pre-assembled substrate and cip or die assembly. Station # 3 then performs formic acid vapor and nitrogen vent to provide formic acid vapor to the junction or interface of the components.

The chip / die and substrate assembly on the plate is linearly moved out of station # 3 to the next station # 4 by a properly controlled linear advancement of the mechanism in which the support plate is placed.

At station # 4 the atmosphere continues the process started at stations # 1, # 2 and # 3. In station # 4, about 150 to 270, for about 10 to about 300 seconds, under a vacuum of about 10 millitorr to about 300 torr to remove trapped air, moisture, oxygen and chemical reaction by-products A vacuum is provided to the preheated chamber at a temperature of < RTI ID = 0.0 > C, < / RTI > and the preassembly in the chamber at station # 4 includes the preassembled substrate and the chip or die assembly. Station # 4 then performs formic acid vapor and nitrogen vent to provide formic acid vapor to the junction or interface of the components.

Subsequently, by controlled movement of the support plate on which the substrate / die assembly is placed, the chip / die and substrate assembly on the plate in station # 4 descend from the chamber and continue step by step with the proper movement mechanism to the adjacent solder melting station # 5. Is moved linearly.

The temperature at station # 5 is maintained at a particular peak set temperature between about 150 ° C. and about 270 ° C., and the chip / substrate and substrate assembly is about 10 for the final electrically coupled substrate / die assembly. For extended periods of time between seconds and about 300 seconds, in accordance with the requirements of the characteristics of the particular solder compound, it is heated to a temperature higher than the appropriate solder melting temperature by means of a suitable brush melting means in a controlled manner. . In station # 5 the chamber can be maintained in vacuum and vented with nitrogen to control stress and to introduce formic acid vapor to the joint interface.

Thereafter, the chip or die and substrate assembly joined on the support plate are moved out of station # 5 stepwise by the controlled movement of the support plate on which the substrate / die assembly is placed and moved to the stepwise continuous cooling station # 6.

The atmosphere at station # 6 changes the process of station # 5. Remove solder mationg the chip or die and the substrate together before removing it from station # 6 and moving it to the loadlock station for subsequent subsequent manufacturing processes. For cooling, the atmosphere in station # 6 is cooled to a temperature between about 20 ° C. and about 30 ° C., or about room temperature or lower, for a period of time between about 10 seconds and about 300 seconds by a proper chilling arrangement. do.

The final stage of the serial thermal processing portion of this semiconductor processing is performed when the substrate assembly is sequentially moved to the final or substrate assembly Un-Load / Lock station. And the chip or die and substrate assembly or substrate joined and processed therein are unloaded from the support plate in the final chamber.

After the previous chip or die substrate assemblies have been moved to their next successive stations, the new raw substrate assembly is sequentially staged through stations # 1 through # 5 in the processing apparatus. To a support plate at an upstream Load / Lock station. This process allows many substrate assemblies to perform the process simultaneously as each substrate assembly is moved downstream step by step to their next inline station.

At each particular station, processing parameters are set to cover all specific solders, which may include high lead, eutectic, and lead free solders.

The processing details of the system include the following:

Load / Lock Station: A chip or die pre-attached on the substrate (without melting the solder) is placed on a support plate in a load station or chamber that is purged with nitrogen gas at room or room temperature to remove moisture and oxygen therein. Loaded and transported from there to the first process station designated as station # 1.

In station # 1 preheat the initial chamber to a temperature below the solder melting point, apply vacuum to station # 1, then purge the formic acid to remove oxides in the assembly interface, and formic acid vapor Refill the chamber with formic acid vapor mixture to fill the joint interface and transfer the assembly to station # 2.

At the next station (# 2), provide heating and vacuum to a temperature above the melting point of the solder, provide a vacuum to the chamber, purge the chamber with formic acid vapor for oxide reduction, and move the assembly to the next station # Go to 3.

In the next station (# 3) it is preferred to provide heating and vacuum to a temperature above the melting point of the solder, to provide a vacuum to the chamber, purge the chamber with formic acid vapor for oxide reduction, and Go to next station # 4.

 At station # 4 at a temperature between 150 ° C. and 270 ° C., preferably at a temperature above the melting point of the solder, providing a vacuum and providing a vacuum to the chamber, and chamber with formic acid vapor for oxide reduction. Purge it and move the assembly to the next station # 5.

At the next station # 5 at a peak high temperature between 150 ° C. and 270 ° C., heating and vacuum to a temperature clearly above the melting point of the solder, and vacuuming the chamber to remove voids And move the assembly to the next station # 6.

In station # 6, the formic acid vapor and nitrogen are vented to provide a vacuum to the chamber and to cool the currently assembled pre-assembly to about 20 ° C. to 30 ° C. to control stress and provide formic acid vapor to the joint interface. Move assembly to final (Un) Lock / Load.

The cooled, fully joined substrate assembly is provided at or near room temperature while linearly downstream, while reaching the next or Unload / Lock station. The shuttled, cooled, joined assembly linear downstream is unloaded from it as a now joined substrate assembly.

Reflowing of high lead, eutectic, and lead free solders is completed due to the treatment of formic acid, and the substrate configuration is a chamber of a particular station under atmospheric pressure. Treatment by injection of formic acid into. Due to the provision of a vacuum, removal or minimizing the voids inside the solder during solder reflow occurs after the surface oxide has been reduced and the solder has melted.

However, in the present invention, in order to effectively remove surface oxides such as lead, tin, copper, silver, and indium, only one chemical like formic acid is used. need. Formic acid also contains surface oxides of high-lead solders such as lead and tin compounds, eutectic solders, and lead-free solders, as well as silver, tin or silver, copper, and indium compounds. Can be used to remove.

For example, lead-free solders such as tin / silver (SnAg) have a melting temperature (mT) of 217 ° C. and formic acid reaction temperature is between 180 ° C. and 200 ° C. which can be used in the process of the invention.

As used herein, the removal of moisture on the surface can be easily accomplished by using a stepped, independent, multi-chamber linearly aligned machine. Removal of surface oxides or minimization of internal voids of solder bumpers or balls may also be achieved. By supplying formic acid under atmospheric or higher pressures, large amounts of formic acid molecules can be used in the oxide removal process. It is very important to provide a vacuum and a formic acid vapor charge and vent before melting the solder in the assembly.

In addition, by supplying formic acid under atmospheric pressure or higher, the mechanical system for the transport of chemicals is easy and adjustable. Because of the pressure used, the heating system is capable of uniform and controlled heating of the substrate or semiconductor assembly. Under atmospheric pressure, heat transfer from the heating system to the solder is more efficient. This is especially true because substrate sizes are larger, and system requirements are higher, in modern semiconductor manufacturing.

Since the conduction of heating and cooling can be carried out more efficiently when done at atmospheric pressure or above, the formation of solder bumps and ball joints can be performed in an improved manner. Initial heating and cooling at atmospheric pressure and subsequent heating and vacuum application at elevated temperatures cause the pressure inside the void to move the void to the surface. Such voids can then be easily removed.

The objects and advantages of the present invention can be more clearly understood with reference to the following drawings.
1 is a perspective view showing a linear substrate assembly processing apparatus of the present invention.
Figure 2 is a side view of a chip or die and substrate with a solder arrangement in between when performing the first step of the process of the present invention.
FIG. 3 is a side view similar to that shown in FIG. 2 when the chip or die and the substrate assembly perform a second step of the process of the present invention.
4 is a side view of the processing apparatus of FIG. 1.
FIG. 5 is a perspective view of a chamber cut transversely to a linear heat treatment system showing heater plates and associated shuttle elements of the chamber structure. FIG.
6 is a perspective view of a series of lower heater plates and shuttle elements in linear alignment.

1 is a pre-assembled chip or die through a series of at least six independent and closed station chambers, an initial load lock chamber, and a final unload lock chamber in a processor arrangement 10, as shown in FIG. An electronic chip made of a chip fabrication process having a serial thermally arranged serial thermal processing station arrangement (10) using a method of continuously processing the substrate assembly (W). .

As shown in FIG. 1, a linear production station arrangement 10 is provided with processing stations numbered (eg numbered 1 to 6) from an initial load lock station for the material to be processed, such as a semiconductor substrate assembly. Arranged in stages in a series of linearly aligned, spaced-apart locations. As an example, as shown similarly to the various aspects and embodiments of the arrangement 10 in the mechanisms shown in the '789 and' 879 patents described above, each station is independently of temperature, pressure, and atmosphere therein. Adjust The provision of additional processing chambers or stations may be included within certain aspects of the present invention.

To define a particular aspect of the present invention, devices such as semiconductor chip / die substrate assemblies W as shown in FIGS. 2 and 3 are loaded into the initial station L1 of FIG. 1. In the load lock station L1, a combination of the pre-attached chip or die 14 and the substrate assembly 12 as shown in FIGS. 2 and 3 is loaded onto a suitably transportable support plate 16, and the processing arrangement. It is continuously enclosed in an enclosed environmentally controlled chamber or housing at ambient or atmospheric pressure present at 10. The substrate 12 has solder pads 18 prearranged thereon, and the chip or die 14 has adjacent solder bumps 20 aligned and prearranged thereon on each other, with the support plate being Prior to being moved to the load lock station of the processing arrangement 10, they are easily pre-attached to one another, for example by thermal energy or ultrasonic energy. The chip or die 14 and the substrate 12 are generally spaced from each other at a distance " D " of about 10 to 500 microns from each other in this assembly process.

Assembly W is moved from the load lock position to the first processing chamber at station # 1. By means of suitable heating means "H" in the first processing chamber, a vacuum is provided to the chamber preheated to a set temperature between about 150 ° C and 270 ° C. According to one preferred embodiment of the present invention, the preheated chamber has a vacuum of about 10 millitorr to about 300 millitorr to remove trapped air, moisture, oxygen and by-products by chemical reaction. Under, for about 10 to about 300 seconds, can be maintained at a temperature just below the melting point of the particular solder used for the components of the preassembled substrate and chip or die assembly "W". Station # 1 is then charged with formic acid vapor "FA" by appropriate means to have formic acid vapor at the junction or interface of the components, and nitrogen vent "V" by appropriate means. To perform. As shown in FIGS. 2 and 3, the assembly W is heated to a set temperature (determined depending on the properties of the solder) between about 150 ° C. and about 270 ° C. by suitable heating means “H”, and the assembly “W” is The formic acid FA charge shown in FIG. 3 and nitrogen vent "V" to the outside as shown in FIG. 2 are performed.

The support plate 16, which the substrate and chip or die assembly W contains, is sequentially indexed to the next location or the next subsequent station, designated station # 2.

In station # 2, a vacuum is provided to the preheated chamber “M” at a temperature between about 150 ° C. and 270 ° C. According to one aspect of the invention, a vacuum of about 10 millitorr to about 300 torr for about 10 to about 300 seconds to remove the trapped air, moisture, oxygen and products by chemical reaction Underneath, the temperature is preferably maintained above the melting point of the particular solder used in the preassembled substrate and the chip or die assembly (W). Station # 2 then performs formic acid vapor FA introduction and nitrogen vent "V" to have formic acid vapor at the junction or interface of the components.

The processing temperatures and atmosphere at these stations are adjusted and controlled based on the specific solder characteristics used or required for the particular process of substrate / semiconductor assemblies.

As shown in FIG. 3, the atmosphere in the chamber is vented with formic acid (FA) vapor to remove oxides. In addition, the chip / die on the support plate 16 in the chambers and the substrate assembly W are heated at a temperature between about 150 ° C. and 270 ° C. in a controlled manner by convection and / or conduction as shown in FIG. 2. The processing temperatures of stations # 2, # 3, # 4, 5 (and another chamber in another aspect of the invention) are adjusted and controlled based on the characteristics of the solder used in the particular process of substrate / semiconductor assemblies.

The chip / die on the plate 16 and the substrate assembly W leave the station # 2 by controlled transfer of the support plate 16 and are transferred to the subsequent station # 3 as appropriate in stages.

In station # 3, a vacuum is provided to the preheated chamber at a temperature between about 150 ° C and 270 ° C. It is desirable to remain above the melting point. And a vacuum of about 10 millitorr to about 300 torr is provided for about 10 to about 300 seconds to remove the trapped air, moisture, oxygen and the product by chemical reaction. Station # 3 then performs formic acid vapor FA introduction and nitrogen vent "V" to have formic acid vapor at the junction or interface of the components therein.

The chip / die on the plate 16 and the substrate assembly W are linearly moved in sequence sequentially, leaving station # 3 by appropriately controlled tip movement of the mechanism in which the support plate is placed, and then to station # 4, which is a subsequent process. do.

With a properly controlled linear advancement of the mechanism in which the support plate 16 is located, the chip / die and the substrate assembly W on the support plate 16 leave station # 3 and are appropriately the next step. It is transported linearly to subsequent station # 4.

The pre-assembly "W" comprising a substrate or chip or die assembly "W" pre-assembled in the chamber at station # 4 is, according to one aspect of the present invention, a preset temperature higher than the melting temperature of the particular brush used herein. The temperature is between about 150 ℃ to 270 ℃. A vacuum of about 10 millitorr to about 300 torr is provided for about 10 to about 300 seconds to remove trapped air, moisture, oxygen and the product by chemical reaction. Station # 4 then performs the proper formic acid “FA” vapor introduction and the appropriate nitrogen vent “V” to have formic acid vapor at the junction or interface of the components therein.

Thereafter, by the controlled, stepped, linear advancement in which the support plate 16 is positioned, the chip / die and the substrate assembly W on the plate 16 leave station # 4 and then It enters heating station # 5.

The temperature of station # 5 is at a peak temperature higher than the melting temperature of the particular solder to create an electrically strong conductive mechanical joint between the components 18, 20 of the assembly W. For example, it is heated to a temperature higher than 217 ° C (for SnAg solder). The temperature may be appropriate heating means for extended periods of time between about 10 seconds and about 300 seconds, depending on the properties of the particular solder compound to bring together final heating and melting to produce an electrically connected substrate / die assembly. By (H), it can be maintained in a controlled manner. In station # 5 the chamber may be provided with a vacuum and vented with nitrogen to regulate stress and introduce formic acid vapor to the joint interface. Assembly "W" is then moved to station # 6.

The atmosphere of station # 6 changes the process of station # 5. At station # 6, the atmosphere is cooled to a temperature of about 20 ° C. to about 30 ° C., or to about room temperature or lower, by a suitable cooling arrangement “C” for a process time between about 10 seconds and about 300 seconds. Cool the solder connecting the chip or die to the substrate assembly "W" for removal (unloading) from 6 and prior to proper movement of the final loadlock station for any subsequent manufacturing process.

The final load / lock station where the wafer die / chip and substrate assembly (W) are joined and treated and the chip or die and substrate assembly "W" is unloaded from its final chamber. When sequentially entered up to L2, the last step in the series of heat treatment sections of this semiconductor processing is performed.

The processing parameters of each particular station are set to cover all specific solders, including high lead, eutectic, and lead free solder.

The system for processing the aforementioned components is shown in more detail in FIG. 5. 5 shows in part a sealable chip-processing chamber 100 of the linear series. The tray has a plurality of chips 104 thereon for processing in the chamber 100 described above, and the edge of the support tray 102 is shown. The (chip) device support tray 102 is generally linear in shape, and is itself supported on the top of a bottom heater plate 114.

The chamber 100 is composed of a lower housing or bottom cover 110 and an inner cup 114. The inner cup 114 is straight and surrounds a lower or bottom heater 114. The bottom heater 114 is located near or away from the lower heater 114 when it is desired to finely adjust the temperature beyond the typical thermostatic control of the chamber 100 as indicated by arrow “U” in FIG. 5. It is movable vertically to adjust the chip processing temperature by moving as much as possible. The bottom housing or bottom cover 100, the inner cup 112 or the bottom heaters 114 are supported by the bottom frame of the bottom processing chamber section 116. This bottom processing chamber section 116 can lower the lower components when the tray is transported in sequence to the next station or chamber, and the chip device tray (when the new tray 102 is transferred into it). chip device tray 102.

The chamber 100 includes top heater plates disposed on top of the chip device tray 102 and is fully enclosed within the stationary top cover 120 shown in FIG. 5. The temperature sensors and heater wire conduits 122, 124 extend through the upper and lower covers 120, 110, respectively.

The chip device tray 102 and the chips 104 may be heated from the bottom, top or both. Each heater plate 114, 118 is individually adjusted to the required heating range, and the bottom heater plate 114 is vertically adjustable along the lower processing chamber section 116 to allow for subsequent station chamber process. A chip device tray 102 and chips 104 may be entered. As mentioned in more detail above, the chambers 100 may be set at various temperatures depending on the required process.

The processing cycle includes transferring the device tray 102 downstream to the successive chamber shown in FIG. 6. Movement from one adjacent chamber 100 to another affects the vertical position of the bottom heater 114 and proper chamber function cycling. Archlyly shaped support ribs 136 are bent inward from a pair of parallel sides 138 of frame rim 140 as shown in FIG. 6. Is extended. The bow-shaped support lips 142 extend outward from the parallel side 138 toward a pair of parallel end members, as shown in FIG. 6. The support lips 138, 142 help to support the adapter ring 102 over the bottom heater 114.

A unique apparatus for moving a plurality of ceramic chips arranged in a device tray so as to be supportable traverses below a linear arrangement of lower heaters and an arrangement of top heating plates. The chip device tray provides a rapid movement sequence while minimizing irregularities and downtime in the process. Device trays and chips thereon are intermittently supported in a unique way between the shuttling processes in a linear device.

Claims (5)

Pre-assembled of pre-soldered semiconductor components spaced in a linear chip processor through a series of independent, linearly adjacent chambers Electronic semiconductor component systems for the manufacture of chip members by flux-free, serial thermal processing arrangements for the continuous processing of a pre-assembled chip / substrate assembly (an electronic semiconductor component system,
The preassembled chip / substrate is loaded into a device support tray in a chamber at an initial Load / Lock station of the processor, and the preassembled chip / substrate Put at atmospheric pressure, the chamber is purged with nitrogen gas;
The pre-assembled chip / substrate is first processed chamber or station by the device tray moved to a position between an upper heater plate and a lower heater plate that can be moved vertically. (a first treatment chamber or station), the preassembled chip / substrate assembly is heated to a temperature below the solder melting temperature, the first treatment chamber is kept below atmospheric pressure, and a formic acid vent is introduced, and a bottom process chamber of the station is lowered;
The pre-assembled chip / substrate assembly enters an open awaition second chamber or station that is open and waiting between the upper and lower heater plates, and the second chamber has its bottom heater. Closed by the vertical movement of the preassembled chip / substrate assembly, heated to a temperature above the melting temperature of the solder, the second chamber is maintained in vacuum, and formic acid vapor vent is introduced into the chamber ;
When the pre-assembled chip / substrate assembly processing chamber is opened by the vertical lowering of its bottom heater plate, the device tray enters into a third chamber or station which is open and waiting between its respective upper and lower heater plates. The chamber is closed, the preassembled chip / substrate assembly is heated to a temperature above the melting point of the solder, vacuum is maintained, and formic acid vapor vent is introduced into the chamber;
The pre-assembled chip / substrate assembly is the fourth station waiting to be opened by the lowering of the bottom or lower heater plate of the fourth station from the third station when the third station is opened by the lowering of its bottom heater plate. Is entered, the preassembled chip / wafer assembly is disposed between the upper and lower plates, and the bottom process section of the chamber is raised by raising the lower heater plate to close the chamber. The chip substrate assembly is heated at a high temperature to handle the solder between the spaced chip and the substrate for lifting and electrically connecting the solder of the chip with the substrate, and the formic acid vapor vent Introduced into the chamber;
The heated and bonded chip / substrate assembly enters the fifth station when the bottom processing chamber section of the fifth station descends, the bottom processing chamber section is elevated to close the chamber, and the assembly is evacuated in vacuum. Heated to peak solder melt temperature to melt and connect the combined chip / substrate assembly, and the chamber is vented with nitrogen;
The connected chip / substrate assembly is transferred from the fifth station to the sixth station when the fifth station is opened and cooled at room temperature or room temperature;
The chip / substrate assembly is transferred to a final downstream loadlock station, and the connected chip / substrate assembly is unloaded from the chamber at the loadlock station;
The first, second, third, and fourth stations are each independently heated to a predetermined temperature of about 150 ° C. to about 270 ° C., at a pressure of about 760 torr for about 10 to about 300 seconds. . The method of claim 1,
And a preset temperature of the first to fourth stations, respectively, maintained below the melting of the particular solder used in the assembly. The method of claim 1,
And a preset temperature of the first to fifth stations, respectively, maintained above the melting point of the particular solder used in the assembly. The method of claim 1,
The preset temperatures of the first and second stations are kept below the melting point of the particular solder used in the assembly, respectively, and the preset temperatures of the third to fifth stations. Is maintained above a melting point of the particular solder used in the assembly. The method of claim 1,
The pre-set temperature of the fifth station is maintained at the peak temperature of all the stations of the heat treatment device and is higher than the melting point of the particular solder used in the assembly. .

Images