JP3378852B2 - Heat melting processing equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat melting processing apparatus, and more particularly to a heat melting processing apparatus used for joining solder.

[0002]

2. Description of the Related Art As a method for forming a solder bump on a semiconductor substrate having a semiconductor element formed thereon, a plating method, a printing method,
There is a solder ball installation melting method. Then, the solder bumps formed on the semiconductor substrate are melted and bonded to an adherend such as wiring. When connecting a solder bump to a terminal of a wiring board, a method of melting the solder bump and removing the oxide film on the surface of the terminal by using flux to clean the solder bump is generally adopted.

The solder joining process using the flux goes through the following process. First, the flux applied to and heated on the adherends such as terminals and wirings activates the adherends and covers them while preventing new oxidation, thereby maintaining the active state of the adherends. To do. Further, the solder melted on the adhered surface spreads on the adhered surface and decomposes part of the flux. Further, when the solder is cooled on the adherend, the solder is solidified and bonded to the adherend, and the residual flux and decomposition products are solidified.

The first problem in such a process is the removal of flux. That is, in order to wash the adhered surface, a method of removing the solidified flux with an organic solvent other than freon and trichlene is used, but since the decomposition products cannot be easily removed with a small amount of organic solvent, a large amount of organic solvent is used. Will be consumed.

The use of CFCs and trichlene has already been prohibited from the viewpoint of preventing the destruction of the ozone layer and preventing the contamination of groundwater. Further, since other organic solvents also adversely affect the environment, development of a solder bump forming method that does not require cleaning is desired. The second problem is that voids are formed inside the solder bumps during melting of the solder. The voids generated at this time remain in the solder bumps even after the semiconductor device is mounted, impairing the reliability line of the connection between the solder bumps and the adherend. Therefore, it is necessary to suppress the generation of voids in the solder bumps.

On the other hand, also in the mounting process of the electronic component module, it is general that the terminals of the electronic component module are mounted on the wiring substrate with the flux or the flux-containing paste applied to the surface of the wiring substrate or the like. During mounting, the flux decomposes due to heat and toxic gas is generated, so it is necessary to ensure work safety. Also,
If a halogen component is present as a residue of the flux, the corrosion and migration of the wiring in the substrate is promoted, so that thorough cleaning is required, which is a factor of increasing the manufacturing cost.

The following several methods are known for the solder mounting process. First, a method of reflowing solder under reduced pressure or a vacuum atmosphere is disclosed in JP-A- 4-220166 , JP-A-5-21391, JP-A-6-29659, JP-A-7-79071, and JP-A-7-79071. 7-170
No. 063, etc. In the device used for the solder reflow, for example, in Japanese Patent Laid-Open No. 4-220166, a preheating furnace and a reflow main body furnace are installed through a gate, each has an exhaust system, and only nitrogen gas is introduced into the preheating furnace. It is a mechanism to do.

Secondly, a method of reflowing the solder using carboxylic acid is described in JP-A-6-190584, JP-A-6-267632, and JP-A-7-164141. The device used for the solder reflow has a structure in which an inert gas, a reducing gas, a carboxylic acid solution and a diketone solution are directly introduced into a heating zone and the diketone is foamed, but a gate and an exhaust device are provided. Instead, it has a mechanism to heat the substrate in a normal pressure atmosphere.

Thirdly, a method of reflowing the solder by utilizing a reducing gas is disclosed in JP-A-62-102546, JP-A-2-41772, JP-A-4-258737, and JP-A-6-190584. JP-A-6-326448
It is described in Japanese Patent Publication No.

[0010]

However, even if the soldering method under a reduced pressure atmosphere is used, the oxide film formed on the adhered surface is not easily removed, resulting in poor bump shapeability. Further, the inventors of the present invention investigated the effect of suppressing the generation of voids by simply using a reduced pressure atmosphere, and found no improvement result.

Also, the effect of suppressing the generation of voids could not be obtained even by soldering with carboxylic acid. By the way, soldering in a hydrogen atmosphere may be effective for reflowing solder bumps at high temperatures.
Since the electrode pad that is the base of the solder bump absorbs hydrogen, the adhesion between the electrode pad and the insulating layer below it decreases,
There is a high possibility of causing an obstacle such as peeling of the electrode pad. Further, at a temperature of 350 ° C. or lower, there is substantially no power to reduce the oxide film by hydrogen or the like.
It is described in Japanese Patent No. 90584.

It is an object of the present invention to form a solder bump without using flux and without generating voids in a solder layer, and to heat and melt the solder bump so that cleaning is not required after shaping the solder bump. To provide a device.

[0013]

Heating and melting treatment apparatus of the present invention According to an aspect of the or forming a solder bump on the adherend, in a step of mounting solder electronic components to the adherend, a reduced pressure atmosphere including ants acid This is for heating and melting the solder inside, or for heating and melting the solder in a reduced pressure atmosphere after applying formic acid to the solder surface.

According to this, the oxide film on the surface of the adherend is removed, no residue remains on the surface, and the bump surface shape becomes good, or the shape of the solder joint portion becomes good, and the solder Generation of voids in bumps and solder joints is suppressed. Further, according to the present invention, the phenomenon of embrittlement of the adherend does not occur, so that the exfoliation of the adherend is prevented. Further, it is possible to omit the formation of the solder bumps and the cleaning after the solder bonding. However, if the ant acid remaining on the solder surface, since there is a risk of re-oxidation of solder in air, after heating and melting followed solidifying the solder, solder and formic acid boiling point above the temperature below the solder melting point Is preferably maintained by heating. As a result, formic acid evaporates from the surface of the solder, and reoxidation of the solder is prevented.

If formic acid is supplied in advance to the surface of the solder before heating and melting the solder, the reduction of the formic acid gradually progresses in the process of gradually increasing the temperature of the solder, so that voids or solder generated in the solder The existing voids gradually escape. As a result, the voids are removed at once, and the defective solder shape and the solder scattering do not occur. The above-mentioned method is, for example, a chamber for containing a heating target device in which solder is exposed, a heater mounted in the chamber for heating the solder, an exhaust unit for decompressing the chamber, and a chamber. It is achieved by heating and melting treatment apparatus characterized by having a dovetail acid supply means for supplying ants acid within.

Alternatively, a chamber for containing a device to be heated in which solder is exposed, a heater mounted in the chamber for heating the solder, an exhaust means for decompressing the inside of the chamber, and an inside of the chamber It is achieved by heating and melting treatment apparatus characterized by having a coating means for coating the dovetail acid-containing gas or ants acid-containing solution in the solder prior to inserting the heating target device.

[0017] In heat-melting treatment apparatus described above, the intake or exhaust side of the exhaust means Ru provided or fitted with a formic acid recovery mechanism or formic acid decomposition mechanism. The ants acid supply means, Ru der those provided with a heating means for promoting vaporization of ants <br/> acid in the vicinity of the tip of the tube and having a tube that emits ants acid.

According to such a heating and melting treatment apparatus, since the formic acid recovery mechanism and the formic acid decomposition mechanism are attached to the exhaust side of the heating and melting chamber, it is possible to prevent formic acid from scattering into the air. Further, since providing a heating mechanism for heating the ants acid moiety to release an ant acid into the chamber, ants acid in the solder surface after solder heating and melting to prevent the ant acid becomes droplet state the solder surface Is less likely to remain and solder reoxidation is prevented.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. (First Embodiment) The inventors of the present invention have placed a solder-deposited surface, for example, a surface of an electrode, a surface of a wiring and solder on a reduced pressure or in a vacuum atmosphere to heat them, and to heat a gaseous carboxylic acid in the atmosphere. It is considered that the voids formed in the solder layer during the melting of the solder are removed by simultaneously supplying the metal oxide and the oxide film on the solder deposition surface is removed.

As the carboxylic acid, for example, formic acid, acetic acid, acrylic acid, propionic acid, ptylic acid, caproic acid,
Oxalic acid, succinic acid, salicylic acid, malonic acid, enanthic acid,
There are caprylic acid, pelargonic acid, lactic acid, capric acid and the like, and when used, one may be selected from them, or a plurality of them may be selected and mixed. The reducing action to copper oxide is shown by the following formula. In the following formula, R represents hydrogen or various hydrocarbon groups.

The chemical properties of 2 (R-COOH) + CuO = (R-COO) ₂ Cu + H ₂ O carboxylic acid are shown in Table 1, and the temperature-vapour-pressure curve is as shown in Fig. 1. Become.

[0022]

[Table 1]

The reducing action of the carboxylic acid is generally remarkable at a temperature above its boiling point, particularly at a high temperature of 200 ° C. or higher, and the oxide of solder and the surface to which nickel (Ni) or copper (Cu) is adhered is The oxide can be easily reduced. Therefore, the adherend surface and the solder are well joined. The carboxylic acid that contributed to the reduction does not produce a residue as in the case of using a flux, so that cleaning after soldering is completely unnecessary.

The voids generated in the solder layer during soldering are caused by poor wetting due to the oxide film on the adhered surface not being removed, or gas generated during heating of the solder. This void does not immediately occur in the solder layer by heating and melting the solder layer in a reduced pressure atmosphere containing carboxylic acid.

In the present invention, in the process of forming a solder on a semiconductor device or the process of connecting a solder and wiring of an electronic component module, by introducing an atmosphere gas containing a carboxylic acid during heating in a reduced pressure atmosphere, flammability can be improved. The concentration of a certain carboxylic acid gas in the atmosphere can be sufficiently lowered, and the safety is improved as compared with the prior art. As a supply source of the carboxylic acid introduced into the reduced pressure atmosphere, an organic solvent having a boiling point of 150 ° C. or lower, a solution such as a diketone, or a material obtained by diluting the carboxylic acid with water may be used, and water is used. In case it is cheaper.

The pressure of the carboxylic acid gas may be determined within a wide range of 13 Pa to 18000 Pa, preferably 660 Pa to 8000 Pa in consideration of the degree of oxidation of the surface of the adherend. When the degree is light, the amount of carboxylic acid gas introduced and the amount of components can be reduced to improve safety and economy. However, above that pressure, the carboxylic acid has a relatively low ignition point and explosion limit, as shown in Table 1, so there is a risk of gas ignition or explosion. Therefore, it is preferable to use the material under the conditions below the ignition point and explosion limit of the material supplying the carboxylic acid.

The partial pressure of the carboxylic acid in the reduced pressure atmosphere must be 10% or more in an atmosphere having a total pressure of 1 Torr. When only carboxylic acid is introduced into the reduced pressure atmosphere to 0.07 Torr, the oxide on the surface of the metal film under the solder bump is not removed. Next, a process of forming solder bumps on a semiconductor substrate (semiconductor wafer) will be described.

First, as shown in FIG. 2A, an insulating film 2 is formed on a silicon (semiconductor) substrate 1 on which semiconductor elements (not shown) such as transistors are formed, and an electrode pad 3 is formed thereon. To form. Although not shown in the figure, a plurality of electrode pads 3 are formed on the insulating film 2. The electrode pad 3 is electrically connected to the semiconductor element formed on the silicon substrate 1. Further, the insulating film 2 may be one that insulates between the multi-layered wiring, or the silicon substrate 1
It may be an insulating film that covers the semiconductor element inside.

Subsequently, an insulating cover film 4, for example, a silicon oxide film is formed on the insulating film 2 and the electrode pad 3, and then the cover film 4 is patterned by a photolithography method to expose the electrode pad 3. The opening 4a is formed. Further, the electrode pad 3 in the opening 4a of the cover film 4
Underlying metal film 5 is formed as an area array bump on and around it. The underlying metal film 5 is formed by sequentially forming a titanium (Ti) layer and a nickel (Ni) layer, and the upper nickel layer is an adherend, and nickel oxide is thinly formed on the surface thereof, although not shown. ing.

Then, tin lead (PbSn) solder bumps 6 are arranged on the underlying metal layer 5 above the opening 4a by an electrolytic plating method, an electroless plating method, a printing method, a solder ball setting melting method, or the like. . The figure shows a state in which solder balls are installed as the solder bumps 6. Next, as shown in FIG. 2B, the silicon substrate 1 is put into a reduced pressure atmosphere A containing a carboxylic acid gas, and the solder bumps 6 are heated by a heater H, whereby the solder bumps 6 are reflowed. The reduced pressure atmosphere A is formed in a heating and melting chamber in the embodiment described later.

As a treatment before heating and melting the solder bumps 6 by the heater H, carboxylic acid may be introduced into the reduced-pressure atmosphere A in the form of gas or liquid. This pretreatment is adopted in each embodiment described later. You may. No reducing gas other than carboxylic acid is introduced into the reduced pressure atmosphere A. Under this environment, the solder bumps 6 are melted and brought into close contact with the electrode pads 3, and then the temperature is lowered until the temperature becomes equal to or lower than the melting point of the solder.
The introduction of the carboxylic acid gas may be stopped during the melting of the solder.

After that, as shown in FIG. 2C, the silicon substrate 1 is taken out from the reduced pressure atmosphere A into the atmosphere and cooled. By repeating the above steps and the conventional steps with changing the solder composition, the kind of carboxylic acid gas, the pressure of the reduced pressure atmosphere A, the heating temperature, and the heating time, the experimental results as shown in Table 2 below are obtained. It was

[0033]

[Table 2]

Samples 1 to 7 in Table 2 have a size of 9.8 mm ×
These are the experimental results of forming solder bumps on a 9.8 mm semiconductor chip. Sample 1 in Table 2 is an experimental result of heating the solder bump in a reduced pressure atmosphere containing no carboxylic acid,
The shape of the solder bumps was not substantially spherical, and when the inside of the solder bumps was observed with an X-ray, many solder bumps with voids occurred.

On the other hand, Samples 2 to 7 in Table 2 are solder bumps heated under a reduced pressure atmosphere containing a carboxylic acid gas or a carboxylic acid-containing gas, and the outer shape of the solder bump is 100% or close to it. The probability was almost spherical and it was good. Further, when the occurrence rate of voids was examined for Samples 2 to 7, it was 1% or less except for Sample 2. Although the sample 2 and the sample 3 used the same type of carboxylic acid, that is, formic acid, the void generation rate of the sample 2 was 1
It was as high as 2.6%.

Then, the inventors of the present invention used formic acid as the carboxylic acid and melted the solder by changing the solder composition, atmosphere gas, pressure, heating time, heating temperature, etc., and the results shown in Table 3 were obtained. Was given. Note that Table 3 also shows, as a reference example, the case where a gas other than carboxylic acid is used.

[0037]

[Table 3]

Samples 1 to 3 and Samples 7 to 15 in Table 3 show the case where formic acid is used. When the heating and holding time at a temperature of mp (melting point) or higher is 5 minutes or longer, the occurrence rate of voids is shown. Became lower, and it became clear that the void generation rate increased when the heating and holding time was shorter than that, for example, 3 minutes. Other than that, both the appearance defect rate and the void occurrence rate were low.

On the other hand, Samples 4 to 6 in Table 3 show conventional examples in which no carboxylic acid is used, and all have a low appearance defect rate or a low void generation rate. In addition,
The structure to which the solder bumps are connected is not limited to the above example, and may be a structure as shown in FIG. (Second Embodiment) An apparatus used for forming solder bumps as described in the first embodiment will be described below.

FIG. 4 is a block diagram showing an apparatus used for forming solder bumps of the semiconductor device of the present invention. The heating and melting treatment apparatus shown in FIG. 4 includes a semiconductor device transfer chamber 10 for transferring a semiconductor wafer 1 on which a semiconductor device is formed, and a heating and melting chamber 1 for heating solder bumps 6 on the semiconductor wafer 1.
1, the semiconductor device transfer chamber 10 and the heating / melting chamber 11 are connected via a gate valve 12.

In the heating / melting chamber 11, a heating table 11a for heating and transferring semiconductor wafers is housed, and a gas introduction pipe 11b is connected above the heating table 11a. The heating table 11a has a conduction heat type heater 11c inside.
Further, the gas introduction pipe 11b is connected to the gas introduction mechanism 11d outside the heating and melting chamber 11, and the carboxylic acid gas or the carboxylic acid-containing gas is fed from the gas supply source 11e to the gas introduction mechanism 11d and the gas introduction pipe 11b. Then, it is introduced into the heating and melting chamber 11. The semiconductor wafer transfer mechanism on the heating table 11a is omitted.

An exhaust port 11f is provided in the heating / melting chamber 11, and an exhaust device 11g is connected to the exhaust port 11f. The exhaust device 11g reduces the pressure in the heating / melting chamber 11 to a predetermined pressure. ing. Further, the heating table 11a has a built-in cooling module 11h, which has a structure in which the heating temperature profile can be strictly controlled.

On the other hand, in the semiconductor device transfer chamber 10, there is installed a transfer mechanism 10a for transferring the semiconductor wafer 1 to the heating / melting chamber 11 and unloading it from the heating / melting chamber 11, whereby the wafer transfer processing time is increased. Making it short. An arm-shaped robot may be arranged instead of the transport mechanism 10a. Further, in the semiconductor device transfer chamber 10, a gate valve 10c is attached to an opening for loading and unloading the semiconductor wafer 1.

By connecting an exhaust device 10b to the semiconductor device transfer chamber 10, the internal pressure of the semiconductor device transfer chamber 10 is reduced to a desired pressure and the tact time for sample exchange in the heating and melting chamber 11 is shortened. . The exhaust device 10b connected to the semiconductor device transfer chamber 10 may be omitted in some cases. As the exhaust device, for example, one or more of a water ring pump, a sorption pump, a dry pump, an oil rotary pump, an oil diffusion pump, a turbo molecular pump, a cryopump, and the like are used.

The semiconductor wafer 1 is transferred, the gate valves 10c and 12 are opened and closed, the heating temperature is adjusted, the exhaust amount is adjusted,
The gas flow rate adjustment is controlled by a control circuit (not shown). A vacuum gauge 13 is attached to the heating and melting chamber 11 described above, if necessary. The vacuum gauge 13 manages the pressure in the heating and melting chamber 11 into which the carboxylic acid-containing gas is introduced, and enables safe operation.

When solder bumps are formed using the apparatus shown in FIG. 4, the semiconductor wafer 1 having the solder bumps 6 in the state shown in FIG. 2A is heated and melted through the semiconductor device transfer chamber 10. It is conveyed onto the heating table 11a of the chamber 11, and then the gate valve 12 is closed. And the first
Under the conditions described in the embodiment, the solder bump 6 is formed as shown in FIG.
Reflow as shown in. Further, after the joining and shaping of the solder bumps 6 are completed, the gate valve 12 is opened and the semiconductor wafer 1 is carried out through the semiconductor device transfer chamber 10.

In place of the conductive heat type heater 11c,
A coil heater or an infrared ray lamp heater of the sixth embodiment described later may be adopted. These heaters are installed at either the upper, lower, or upper or lower position of the heating table 11a. That is, the object to be heated and melted by the heating and melting treatment apparatus of the present embodiment is the solder bump 6 on the semiconductor wafer 1, and the position is sufficient to bond the adherend 5 shown in FIG. 2 (a). Good. (Third Embodiment) In the present embodiment, as a mechanism for introducing a carboxylic acid-containing gas into the heating and melting chamber 11,
The following structure is adopted.

That is, as shown in FIG. 5, the carboxylic acid-containing solution is put into a solution vaporizer 14a such as a constant temperature bath to be vaporized, and the vaporized carboxylic acid-containing gas is adjusted to a gas pressure adjusting section 14b and a gas flow rate adjusting valve. 14c, gas introduction pipe 11
A structure is adopted in which it is introduced into the heating and melting chamber 11 via b. By adopting such a structure, a liquid material can be used, so that the cost is reduced.
Moreover, a uniform gas pressure can be obtained by the gas pressure adjusting unit 14b, and the gas flow rate adjusting valve 14
According to c, the pressure inside the heating and melting chamber 11 as well as the pressure gauge 13 can be strictly controlled, and the work safety can be improved.

Further, as shown in FIG. 5, the exhaust device 11g
When the pressure adjusting mechanism 15 is provided between the heating and melting chamber 11, the required internal pressure can be obtained while suppressing the amount of gas introduced into the heating and melting chamber 11, thus suppressing the consumption of the carboxylic acid-containing solution. Is effective in. Note that FIG.
4, the same reference numerals as those shown in FIG. 4 indicate the same elements. (Fourth Embodiment) In the second and third embodiments, the vaporized carboxylic acid-containing material is introduced into the heating and melting chamber 11, but as shown in FIG. The acid-containing material may be introduced into the heating and melting chamber 11.

In FIG. 6, a carboxylic acid solution or a carboxylic acid-containing solution is stored in a liquid tank 16a arranged outside the heating and melting chamber 11. The liquid supply port of the liquid tank 16a is connected to the upper part of the heating / melting chamber 11 via a liquid flow rate adjusting valve 16b and a solution / mist introducing pipe 16c. In FIG. 6, the same symbols as those shown in FIGS. 4 and 5 indicate the same elements.

According to the liquid supply mechanism as described above, the liquid tank 16
The carboxylic acid in a is introduced into the heating / melting chamber 11 via the solution / mist introducing pipe 16c. And since the inside of the heating and melting chamber 11 is heated and decompressed,
The liquid carboxylic acid immediately vaporizes and diffuses inside the chamber 11. Further, the liquid flow rate adjusting valve 16b can prevent the liquid from being supplied to the heating and melting chamber 11 more than necessary, and can suppress the pressure in the heating and melting chamber together with the pressure adjusting mechanism 15 to a constant value. (Fifth Embodiment) In the structure shown in the fourth embodiment, when introducing an inert gas into the heating and melting chamber 11, a structure as shown in FIG. 7 is adopted. In addition, in FIG. 7, the same reference numerals as those shown in FIGS.
The same elements are shown.

In FIG. 7, an inert gas supply source 16d is arranged outside the heating and melting chamber 11, and the inert gas supply source 16d is connected to the mixing section 16f via an inert gas introduction pipe 16e. The mixing section 16f is attached in the middle of the solution / mist introducing pipe 16c. The inert gas supply source 16d is filled with an inert gas such as nitrogen, argon, helium, or xenon.

In the above structure, the carboxylic acid solution supplied from the liquid tank 16a and the inert gas sent from the inert supply source 16d are mixed in the mixing section 16f to form a mist. The mist is sprayed into the heating / melting chamber 11 via the solution / mist introducing pipe 16c. Since the inside of the heating and melting chamber 11 is heated and depressurized, the mist is vaporized and diffused inside.

Such a structure is effective in reducing the partial pressure of the carboxylic acid gas. (Sixth Embodiment) In the fourth embodiment, an infrared lamp heater may be used as the heating means. For example, as shown in FIG. 8, an infrared lamp heater 17 is arranged above the heating / melting chamber 11 so as to face the semiconductor wafer 1.

When the infrared heating is used, the solder bumps 6 can be heated in a shorter time as compared with the conduction heat method, and the processing time is shortened. In addition, in FIG. 7, the infrared lamp heater 1
Although 7 is arranged on the upper side of the semiconductor wafer 1, the same effect can be obtained by arranging 7 on the lower side of the semiconductor wafer 1. Also,
By using it together with the cooling module 11h, the temperature profile can be strictly managed as in the first embodiment.

The gas supply means may have the same structure as in the second and third embodiments. (Seventh Embodiment) FIG. 9 is a block diagram of an apparatus showing a seventh embodiment, and the same reference numerals as those in FIGS. 4 to 8 indicate the same elements. In FIG. 9, the first and second preliminary exhaust chambers 23 and 24 are adjacent to the substrate transfer port of the heating and melting chamber 11 shown in the second embodiment via the first and second gate valves 21 and 22, respectively. Has been done. Further, the first pre-evacuation chamber 23 is loaded into the loading chamber 2 via the third gate valve 25.
6 are adjacent to each other, and a discharge chamber 28 is adjacent to the second preliminary exhaust chamber 24 via a fourth gate valve 27.

An exhaust device 30 is connected to each of the first and second preliminary exhaust chambers 23 and 24 so that the pressure inside each of the preliminary exhaust chambers 23 and 24 is reduced to a desired pressure. In addition, the first and second preliminary exhaust chambers 23, 24
A transport mechanism 31 is attached inside each. Above and below the transfer mechanism 31 of the first preliminary exhaust chamber 23, there are preheating mechanisms 32 and 3 for preheating the semiconductor wafer 1.
3 is attached to shorten the rise time of heating of the object to be heated (substrate, wafer) in the heating and melting chamber 11. The preheating mechanisms 32 and 33 may be infrared lamp heaters as in the above-described embodiment, or may be conduction heat type heaters or coil heaters.

In the apparatus having the above-described structure, the semiconductor wafer 1 placed in the carry-in chamber 26 is transferred through the third gate valve 25 to the carrier mechanism 3 in the first preliminary exhaust chamber 23.
Placed on top of 1. Then, in the first preliminary exhaust chamber 23, the semiconductor wafers 1
Is preheated, and the exhaust device 30 depressurizes the room to a predetermined pressure. The heating temperature in this case is set to a temperature at which the solder bumps 6 do not melt.

After that, the first gate valve 21 is opened, and the semiconductor wafer 1 is sent onto the heating table 11a of the heating / melting chamber 11 by the transfer mechanism 31. In the heating and melting chamber 11, the first and second gate valves 21, 22
In the closed state, the inside is depressurized to a predetermined pressure by the exhaust device 11g, and the semiconductor wafer 1 and the solder bumps 6 are heated by the heaters 11c and 17 while the carboxylic acid gas or the carboxylic acid-containing gas is introduced into the inside. Then, the solder bumps 6 are connected to the base metal film 5 as shown in FIG. 2A, and the solder bumps 6 are reflowed. The connection and reflow conditions of the solder bump 6 are performed according to the first embodiment.

After such joining and molding of the solder bumps 6 is finished, the heating of the solder bumps 6 is stopped, the temperature is lowered to the melting point or lower, and then the second gate valve 22 is opened to heat and melt the semiconductor wafer 1. It is conveyed from the chamber 11 to the second pre-evacuation chamber 24 in the depressurized state, and then the second gate valve 22 is closed. The semiconductor wafer 1 is transferred to the carry-out chamber 28 by opening the fourth gate valve 27 after being cooled to a predetermined temperature in the second preliminary exhaust chamber 24.

As described above, by setting the carrying direction of the semiconductor wafer 1 to one direction, it becomes possible to continuously supply the wafer to the heating and melting chamber 11, and the mass productivity of solder bump formation is increased. Note that, in FIG. 9, as a mechanism for introducing the carboxylic acid gas into the heating and melting chamber 11, the structure adopted in the fourth embodiment, that is, the liquid container 1 for containing the carboxylic acid solution or the like
6a, liquid flow rate adjusting valve 16b, solution / mist introducing pipe 1
6c, inert gas supply source 16d, inert gas introduction pipe 16
e, a structure having a mixing section 16f is adopted.

When it is not necessary to reduce the partial pressure of the carboxylic acid gas in such a carboxylic acid gas supply mechanism,
As shown in the third embodiment, the inert gas supply source 16
d, the inert gas introducing pipe 16e, and the mixing portion 16f may be omitted, and in this case also, the carboxylic acid solution is supplied into the heating and melting chamber 11 and immediately gasified. Further, as a mechanism for introducing the carboxylic acid gas into the heating and melting chamber 11, the gas supply source 11 is employed, as adopted in the second embodiment.
A mechanism may be adopted in which the gas is introduced from e through the gas introduction mechanism 11d and the gas introduction pipe 11b into the heating and melting chamber 11. (Eighth Embodiment) The solder bump formation was described in the second to seventh embodiments, but in the present embodiment, the assembly of the electronic component module will be described.

In this embodiment, as shown in FIG. 10, the heating and conveying device having the same structure as that described in the seventh embodiment is used. First, as shown in FIG. 11A, an electronic component 40 having a plurality of solder bumps 41 protruding from one surface is used, and the electronic component 40 is mounted on a wiring board 42 to form an electronic component module. In this case, the solder bumps 41 of the electronic component 40 are the wirings 4 made of copper or gold on the wiring board 42.
It is in a state of being positioned on top of No. 3.

As the electronic component 40, the semiconductor element having the solder bump structure shown in FIG.
There are A (ball grid array) packages and other devices. The wiring board 42 may be a ceramic wiring board, a printed wiring board, or a board made of an insulating material having a heat resistant temperature exceeding 200 ° C. In this way, with the electronic component 40 mounted on the wiring board 42, the wiring board 43 and the electronic component 40 are placed in the carry-in chamber 26 shown in FIG. Next, the wiring board 42 and the electronic component 40 are placed on the transfer mechanism 31 in the first preliminary exhaust chamber 23 through the third gate valve 23. Then, in the first preliminary exhaust chamber 23, the electronic components 40 and the wiring board 42 are preheated by the preheating mechanisms 32 and 33, and the exhaust device 30 depressurizes the chamber to a predetermined pressure. The heating temperature in this case is set to a temperature at which the solder bump 41 does not melt.

After that, the first gate valve 21 is opened, and the wiring board 42 and the electronic component 40 are moved onto the heating table 11a of the heating and melting chamber 11 by using the transfer mechanism 31. In the heating / melting chamber 11, the first and second gate valves 21 and 22 are closed, the pressure is reduced to a predetermined pressure by the exhaust device 11g, and at least the carboxylic acid gas is introduced, the solder bumps 41 are heated by the heaters 11c and 17. The wiring 43 is heated to a temperature equal to or higher than the melting point of the solder. As a result, the solder bumps 41 of the electronic component 40 are
As shown in (4), it is connected to the wiring 43 of the wiring board 42 and reflowed. In this case, the wiring 43 of the wiring board 42
Since the oxide formed above is removed by the atmospheric gas containing at least carboxylic acid, the bonding between the solder bump 41 and the wiring 43 is stable. The gas generated at that time is quickly diffused into the reduced pressure atmosphere and removed from the inside of the solder bump 41, resulting in a void-free joint.

The conditions for joining the solder bump and the wiring are as follows:
It is performed under the same conditions as the solder bump formation shown in the embodiment. After finishing such joining, when the temperature reaches the solder melting point or lower, the second gate valve 22 is opened to move the wiring board 42 and the electronic component 40 from the heating / melting chamber 11 to the second preliminary exhaust chamber 24. After the transportation, the second gate valve 22 is closed. Electronic component 4 via solder bump 41
The wiring board 42 to which 0 is connected is connected to the second preliminary exhaust chamber 24.
After the temperature is reduced to a predetermined temperature by, the fourth gate valve 27 is opened and the sheet is conveyed to the discharge chamber 28.

This completes the assembly of the electronic component module. The device for mounting the electronic component 40 on the wiring board 42 is not limited to the configuration shown in FIG. 10, but may be the device shown in FIGS. 4 to 8 or the embodiment described later. The depicted apparatus may be used.
Next, the wiring of the wiring board 42 is made of nickel or copper, and the presence or absence of carboxylic acid, the type of carboxylic acid, the heating temperature,
When the solder bump material, the pressure, the wiring board material, and the insulating material were changed and the occurrence rate of voids at the joint portion and the yield of the joint appearance shape were examined, the results shown in Table 4 were obtained.
The insulating material is a material forming the insulating film 2 or the cover film 4 shown in FIG. 2 (c), or the insulating protection covering the underlying metal film 5 drawn out from the opening 4a as shown in FIG. Membrane 7. In this case, the solder bump 6 has the insulating protection film 7
Through the openings formed in the solder bumps 6 and the underlying metal film 5.
Are connected. The structures of FIGS. 2C and 3 correspond to the case where the electronic component 40 of FIG. 11A is a semiconductor device.

The occurrence of voids is investigated by X-ray inspection.

[0069]

[Table 4]

According to Samples 2 to 5 in Table 4, as compared with Sample 1 which is the conventional condition, the yield of the solder bump bonding shape is improved by introducing carboxylic acid, and the void generation rate in the solder bump is significantly increased. It became clear that it will be reduced. Further, it is possible to obtain extremely high quality by selecting the optimum carboxylic acid and setting the introduction conditions over a wide range of the solder composition. Also, changes in their composition and conditions
Even if the change is made without departing from the spirit of the present invention, the effect can be sufficiently enhanced. (Ninth Embodiment) After introducing formic acid as a carboxylic acid into a reduced pressure atmosphere to heat and melt a solder (solder bump), a portion of the formic acid is not thermally decomposed after the solder is melted in a reduced pressure atmosphere. May remain in the. Then, if the unreacted component of formic acid that has not contributed to the reduction remains on the solder surface, the unreacted component may reoxidize the solder in the air.

In order to remove such unreacted components of formic acid from the surface of the solder, heating and melting treatment of the solder is performed according to the flowchart shown in FIG. First, as shown in FIG. 2A, a base metal film (adherend) 5 on the silicon substrate 1
The solder bumps 6 are formed on the above. Solder bump 6 is Pb9
5: Sn5, eutectic Pb-Sn, or Sn-3.5Ag. Then, as shown in FIG. 2 (b), the silicon substrate 1 is put in a reduced pressure atmosphere. This allows
As shown in FIG. 12A, the solder bump 6 and the base metal film 5
Are placed in a reduced pressure atmosphere.

Subsequently, as shown in FIGS. 12B and 12C, after the formic acid is introduced into the reduced pressure atmosphere, the solder bumps 6 are heated and melted at a temperature higher than the melting point of the solder for several tens of seconds to form the solder bumps 6.
Is bonded to the underlying metal film 5, and the solder bumps 6 are shaped to prevent the occurrence of voids in the solder bumps 6. Further, as shown in d and e of FIG. 12, after the heating temperature of the solder bump 6 is lowered to a temperature lower than the melting point of the solder and higher than the boiling point of formic acid to solidify the solder bump 6, the temperature is maintained. The exhaust of the reduced pressure atmosphere is continued while this temperature is maintained. By the exhaust, the pressure of formic acid in the decompressed atmosphere gradually decreases, and the formic acid adhering to the surface of the solder bump 6 and the surface of the cover film 4 around it is evaporated, and the formic acid is removed from the solder bump 6 and the cover film 4. Substantially removed.

Then, as shown in FIGS. 12F and 12G, after the temperature of the solder bump 6 is kept below the melting point of the solder and above the boiling point of formic acid for a predetermined time, the temperature of the solder bump 6 is kept below the boiling point of formic acid, for example, to room temperature. After lowering, the silicon substrate 1 is taken out from the reduced pressure atmosphere to the atmosphere. The solder bumps 6 bonded to the adherend 5 by the above steps were not reoxidized.

[0074] The reduced pressure atmosphere after heating and melting the solder as described above, the solder was lowered to room temperature, for about 6 minutes 1
Each of the solder kept at a temperature of 10 ° C. and the solder kept at a temperature of 200 ° C. in about 4 minutes was taken out from the decompressed atmosphere into the atmosphere and left in the air for one week. Then, the oxidation state of the solder surface, which is subjected to different temperature treatments after heating and melting, was investigated for each solder material. During the investigation, the effects on the oxidation of the solder due to the difference in whether or not the reduced pressure atmosphere was exhausted after the heating and melting of the solder and the effects on the oxidation of the solder due to the change in the pressure of the reduced pressure atmosphere after the heating and melting were combined. I investigated.

[0075]

[Table 5]

According to Table 5, between the time when the solder is solidified and the time when it is taken out into the atmosphere, the solder cooled to room temperature is 1
While its surface was severely oxidized after a week,
No oxidation was found on the surface of the solder kept at 110 ° C. or higher for a predetermined time even after 1 week. It is considered that this is because the formic acid attached to the solder surface was evaporated by the heating after the solder was solidified. The boiling point of formic acid in the atmosphere is around 101 ° C., and the solder holding temperature must be higher than this. Further, since the boiling point of formic acid decreases in a reduced pressure atmosphere, formic acid is removed at a temperature higher than the boiling point in a reduced pressure atmosphere, but the closer the temperature is to the boiling point, the longer the heat retention time needs to be.

Further, according to Table 5, when the temperature of the solder is kept above the boiling point of formic acid after the solder is solidified, if the pressure of the reduced pressure atmosphere is increased, the surface of the solder may be changed depending on the purity of the gas mixed in the reduced pressure atmosphere. However, since it is easily oxidized after that, it is preferable to control the reduced pressure atmosphere to 1500 Pa or less after solidification of the solder. Further, according to Table 5, if the temperature after solidification of the solder is kept at the boiling point of formic acid or higher without exhausting the gas in the reduced pressure atmosphere, the solder surface is likely to be oxidized thereafter. At times, it is preferable that the reduced pressure atmosphere be in an exhausted state.

The above-described method is not adopted only when joining the solder to the metal surface on the silicon substrate, but when joining the solder layer formed on the electronic component to the wiring of the wiring board. Also applies. (Tenth Embodiment) When a solder layer is heated and melted to be joined to a metal surface, poor wettability due to the oxide film on the metal surface not being removed or gas generated at the time of joining As a result, gas enters the solder layer, and if the gas remains in the solder layer, it becomes a void, which causes poor bonding with the metal surface. Further, the voids existing in the solder layer may remain after the solder layer and the metal are joined. Generation of such voids is prevented by heating and melting the solder layer in a reduced pressure atmosphere containing formic acid. However, when the gas escapes from the molten solder layer, part of the solder scatters,
Alternatively, poor shaping of solder is rarely caused.

In order to prevent such solder scattering and poor solder shaping, solder heating and melting processing is performed according to the flowchart shown in FIG. First, as shown in FIG. 2A, a base metal film (adherend) 5 on the silicon substrate 1
The solder bumps 6 are formed on the above. Solder bump 6 is Pb9
5: Sn5, eutectic Pb-Sn, or Sn-3.5Ag. Subsequently, as shown in FIG. 2B, the silicon substrate 1 is put in a reduced pressure atmosphere. As a result,
As shown at 3a, the solder bumps 6 and the underlying metal film 5 are placed in a reduced pressure atmosphere.

Then, as shown in b and c of FIG.
Temperature lower than solder melting point, for example 20 to 40 higher than solder melting point
The solder bumps 6 are heated at a temperature lower by ℃, and formic acid is supplied to the solder bumps 6 in the heated state. Next, as shown in d of FIG. 13, the solder bumps 6 are gradually raised to a temperature equal to or higher than the melting point of the solder. During the temperature rise, the oxide film on the surface of the solder bump 6 is gradually removed, and the gas generated or present in the solder bump 6 is gradually degassed. As a result, neither solder scattering from the solder bumps 6 nor defective shaping of the solder bumps 6 occurs.

After that, as shown in e and f of FIG.
While exhausting the gas in the reduced-pressure atmosphere, the heating temperature of the solder bump 6 is lowered to a temperature in the range below the melting point of the solder and above the boiling point of formic acid, and the temperature is maintained for a predetermined time, the formic acid on the surface of the solder bump 6 is removed and then In addition, the surface is less likely to be oxidized. Furthermore, as shown in g of FIG. 13, the temperature of the solder bumps 6 is lowered to room temperature, and then the silicon substrate 1 is taken out from the reduced pressure atmosphere.

As described above, the timing of formic acid introduction is
The optimum state is not during melting of the solder but before heating the solder and heating the solder at a temperature several tens of degrees lower than the melting point of the solder. Then, after introducing the formic acid, the temperature of the solder is gradually raised to the melting point of the solder or higher, so that the solder and the metal surface are joined in a normal shape. Therefore, when the proper temperature of the solder when introducing formic acid was investigated, the results shown in Table 6 were obtained. According to Table 6, the melting point of the solder (m.
p.) or higher, the formic acid is supplied to the solder layer in a state where the solder layer is heated. After that, the solder is kept at a temperature higher than the boiling point of formic acid and lower than the melting point of the solder, and the reduced pressure atmosphere is set to 10
Even when the pressure was set as low as Pa and the depressurized atmosphere was exhausted, the void generation rate of the solder was high. The void in this case is due to a defective shape of the solder.

[0083]

[Table 6]

Therefore, it was clarified that the yield of the shape of the solder changes depending on the timing of introducing the formic acid, and that the void generation rate is significantly reduced if it is introduced before the melting of the solder. In the experiment of Table 6, formic acid was mixed with nitrogen gas and sprayed, but an inert gas such as argon, helium, or xenon may be used instead of nitrogen. Alternatively, only formic acid may be introduced into the reduced pressure atmosphere. Further, a solvent having a boiling point lower than the holding temperature after solidification of the solder, for example, ethanol may be vaporized and mixed with formic acid and introduced into a reduced pressure atmosphere.

If the solder layer before melting contains many voids, such as when the solder layer is formed by plating,
Before the formic acid is introduced, the solder layer is melted and voids are once removed, and then the temperature of the solder layer is lowered to its melting point or lower, and then the solder layer is joined to the metal surface according to the flow shown in FIG. Can effectively suppress voids. Further, even when the solder layer is temporarily attached on the metal layer by the printing method, the joining of the solder layer and the metal layer according to the flow shown in FIG. 13 is effective, but in that case, flux is present in the printing paste. If added, it is necessary to clean the solder layer before melting. Therefore, when the solder layer is formed by a printing method, it is preferable to use a printing paste that does not use flux.

The method described above is not adopted only when the solder layer is bonded to the metal surface on the silicon substrate, but also when the solder layer formed on the electronic component is bonded to the wiring of the wiring substrate. Applied. (Eleventh Embodiment) Since formic acid has a high metal corrosiveness, there is a risk of corroding the gas introduction pipe, the exhaust pipe and the like connected to the heating and melting chamber and the like shown in the second to eighth embodiments. Further, since formic acid is condensed at room temperature, it is not preferable to discharge it into the air as it is from the exhaust pump. Furthermore, if formic acid is non-uniformly supplied to the substrate or the solder layer, the shapes of the plurality of solder layers will vary.

Therefore, the heating and melting treatment apparatus having various mechanisms for preventing such corrosion by formic acid, suppressing the release of formic acid into the air, or uniformly supplying formic acid onto the substrate is as follows: This will be described below. FIG. 14 is a configuration diagram of the heating and melting treatment apparatus according to the eleventh embodiment, and the same reference numerals as those in FIG. 4 denote the same elements.

The heating and melting treatment apparatus shown in FIG.
Similar to the embodiment, the semiconductor device transfer chamber 10 for transferring the semiconductor wafer 1 and the heating / melting chamber 11 for heating the solder bumps 6 on the semiconductor wafer 1 are provided. It is connected via a gate valve 12. Inside the heating and melting chamber 11, a gas introduction pipe 18a which is entirely made of SUS304 stainless steel or whose inner surface is processed with Teflon (registered trademark) is connected. The gas introduction pipe 18a is connected to the gas supply mechanism 18b outside the heating and melting chamber 11,
The formic acid gas or the formic acid-containing gas supplied from the gas supply mechanism 18b passes through the gas introduction pipe 18a and the heating and melting chamber 1
1 is introduced into the reduced pressure atmosphere. The gas flow rate through the gas introduction pipe 18a is adjusted by the mass flow controller 18c.

A heater 19a for preventing liquefaction of formic acid is attached near the gas introducing pipe 18a. FIG. 15 (a) shows a structure for heating the gas introduction pipe 18a by covering the outer circumference of the discharge end of the gas introduction pipe 18a with a heater 19a. In order to prevent the liquefaction of formic acid, instead of the structure shown in FIG. 15 (a), as shown in FIG. 15 (b), a heater 19b is arranged at a position ahead of the discharge end of the gas introduction pipe 18a. May be, this heater 19b
Indicates a structure for heating the gas released from the gas introduction pipe 18a. According to this, the distribution of formic acid in the reduced pressure atmosphere in the heating and melting chamber 11 can be equalized, and formic acid can be given to each of the plurality of solder bumps 6 on the semiconductor wafer 1 in a uniform amount. When formic acid is supplied to a plurality of solder bumps 6 in a uniform amount, the shapes of the solder bumps 6 after heating and melting are aligned, so that the solder bumps 6 and the underlying metal layer 5 shown in FIG. Yield improves.

By the way, the formic acid which has passed over the semiconductor wafer 1 in the heating and melting chamber 11 is exhausted by the exhaust device 50 from the exhaust port 11f. The exhaust device 50 is
The first exhaust pipe 5 is connected to the exhaust port 11f of the heating / melting chamber 11.
It has an exhaust pump 50b connected via 0a, and a formic acid recovery mechanism (carboxylic acid recovery mechanism) 50d connected to the exhaust side of the exhaust pump 50b via a second exhaust pipe 50c.

As shown in FIG. 16, the formic acid recovery mechanism 50d connects the second exhaust pipe 50c to the solution 5 in the liquid container 50e.
It has a structure in which the third exhaust pipe 50g is connected to the upper part of the liquid tank 50e while being inserted into 0f. The liquid 50
As the solution 50f in e, water or alcohol that easily dissolves formic acid is used. The first and second exhaust pipes 50a and 50c are entirely made of SUS304 stainless steel or have a structure in which the inner surface is Teflon processed.

According to the heating and melting treatment apparatus having the above constitution,
Since the inner surfaces of the gas introduction pipe 18a and the exhaust pipes 50a and 50c are made of stainless steel or Teflon coating, they have corrosion resistance against formic acid, and the maintenance of the device is easy. Further, since the formic acid discharged from the exhaust pump 50b is dissolved in the solution 50f when passing through the formic acid recovery mechanism 50d, the concentration of formic acid in the gas exhausted from the formic acid recovery mechanism 50d into the air becomes extremely low.

Further, since the heaters 19a and 19b are arranged in the vicinity of the exhaust end of the gas introducing pipe 18a, even if a slight amount of formic acid cooled and liquefied when passing through the gas introducing pipe 18a is present, Is again vaporized by the heaters 19a and 19b , so that formic acid can be prevented from remaining on the semiconductor wafer 1 and the solder bumps 6. Heater 19
The effects can be expected most when the set temperatures of a and 19b are in the range of 50 ° C to 110 ° C. If the heating temperature of the heaters 19a and 19b is raised too much, the liquefied formic acid may be bumped and burst, or the formic acid may be decomposed.

For heating the semiconductor wafer 1 and the solder bumps 6,
Similar to the second embodiment, not only the heat transfer type heater 11c is used, but also the infrared lamp heater 17 is arranged in the upper part of the heating and melting chamber 11 so that the infrared lamp heater 17 is responsible for the temperature rise. Good. Heat transfer type heater 1
1c alone has a large heat capacity and is difficult to cool quickly. However, by arranging the infrared lamp heater 17, heating of the solder bumps 6 at the time of melting is assisted, and subsequent cooling of the solder bumps 6 is quick. In addition, it is possible to lower the melting point to below the melting point within 1 minute. That is, the infrared lamp heater 17 is arranged to improve the controllability of the temperature of the solder bump 6.

Reference numeral 50z in FIG. 14 indicates a pressure adjusting mechanism attached to the first exhaust pipe 50a.
By the way, the formic acid recovery mechanism 5 is provided on the exhaust side of the exhaust pump 50b.
By providing 0d, it is possible to suppress the diffusion of formic acid into the air, but if the formic acid stays in the exhaust pump 50b, the exhaust pump 50b will corrode and shorten the service life.

Several methods for suppressing the corrosion of the exhaust pump 50b are shown below. First, as the first method, an exhaust mechanism of the exhaust pump 50b, for example, a structure in which the surface of the screw 50h as shown in FIG. 17A is coated with Teflon 50i is adopted. The second method is shown in FIG.
As shown in (b), a mechanism is adopted in which the screw 50h is heated at 110 ° C. or higher so that formic acid does not stay in the exhaust pump 50b.

As a third method, as shown in FIG. 18, a structure in which a formic acid decomposition mechanism 51 is arranged between the exhaust port 11f of the heating and melting chamber 11 and the exhaust pump 50b is adopted. As shown in FIGS. 19 (a) and 19 (b), the formic acid decomposition mechanism 51 has a cylindrical body 51a made of SUS304 stainless steel, and the cylindrical body 51a has a through hole 5 extending in the cylindrical axis direction.
A plurality of 1b are formed. Further, the columnar body 51a is housed in a cylindrical casing 51d made of stainless steel while being surrounded by the heater 51c. Further, a gas introduction port 51e and a gas exhaust port 51f communicating with the through hole 51c are formed at both ends of the casing 51d. Flange 51g and 51h are provided outside the gas introduction 51e and the gas exhaust port 51f, respectively.
Are formed. One flange 51g is connected to the first exhaust pipe 50a, and the other flange 51h is connected to the exhaust pump 50b. Instead of providing the plurality of through holes 51b in the stainless steel columnar body 51a, a plurality of thin stainless tubes may be bundled in parallel and arranged.

In such a formic acid decomposition mechanism 51,
The heater 51c heats the inside of the through hole 51b in the stainless steel cylindrical body 51a to 200 to 300 ° C. Then, the exhaust port 11f of the heating and melting chamber 11
The formic acid discharged from is decomposed into water and carbon while passing through the through hole 51b and is discharged to the exhaust pump 50b. Formic acid begins to decompose when heated to over 200 ° C, so the exhausted gas loses its corrosiveness. Therefore, in the apparatus shown in FIG. 18, the formic acid recovery mechanism is not connected to the exhaust pump 50b. However, in order to prevent further diffusion of formic acid into the air, the formic acid recovery mechanism 50d shown in FIG. 16 is used.
May be attached to the exhaust side of the exhaust pump 50b.

By the way, in order to introduce the formic acid into the heating and melting chamber 11, instead of providing the gas introduction pipe 18a and the gas supply mechanism 18b as shown in FIGS. 14 and 18,
The liquid tank 16a as shown in the fourth embodiment may be connected to the heating and melting chamber 11 via the flow rate adjusting valve 16b and the solution / mist introducing pipe 16c. For example, as shown in FIG. 20, the liquid tank 1 arranged outside the heating and melting chamber 11
Formic acid or a formic acid-containing solution is stored in 6a. The liquid supply port of the liquid tank 16a is heated and melted through the liquid flow rate adjusting valve 16b and the solution / mist introducing pipe 16c.
Attached to the top of. Further, heaters 19a and 19b are attached near the gas introducing pipe 16c as shown in FIG. 15 (a) or FIG. 15 (b).

According to such a structure, the carboxylic acid released from the solution / mist introducing pipe 16c is vaporized in the depressurized heating / melting chamber 11 and the heater near the exhaust end of the solution / mist introducing pipe 16c is heated. It is heated by 19a and 19b and evaporated to further promote vaporization. Also in this case, the heating temperature of the heaters 19a and 19b is 50 to
The most evaporation effect can be expected in the range of 110 ° C. However,
If the heating temperature by the heaters 19a and 19b is raised too much,
Be careful because the mist of formic acid may burst and burst, or the formic acid may decompose.

As shown in FIG. 21, an inert gas mixing section 16f is attached in the middle of the solution / mist introducing tube 16c, and the inert gas mixing section 16f is connected via the inert gas introducing tube 16e. The active gas supply source 16d may be connected. The inert gas supply source 16d is filled with an inert gas such as nitrogen, argon, helium, or xenon. The flow rate of the solution / mist introducing pipe 16c is adjusted by the mass flow controller 16g.

According to such a structure, the formic acid supplied from the liquid tank 16a and the inert gas sent from the inert supply source 16d are mixed in the mixing section 16f to form a mist. The vaporization of the mist is promoted by the heaters 19a and 19b arranged near the solution / mist introducing pipe 16c. In the apparatus shown in FIGS. 20 and 21, the formic acid decomposition mechanism (carboxylic acid decomposition mechanism) 51 shown in FIG. 19 may be interposed between the exhaust pump 50 and the first exhaust pipe 50a.

By the way, in the above-mentioned apparatus, the semiconductor wafer 1 transferred from the transfer chamber 10 is processed in the heating and melting chamber 11 and then returned to the transfer chamber 10 again, so that the cost of the apparatus is structurally reduced. To be done. On the other hand, when it is desired to shorten the processing time, as shown in FIG. 22, the heaters 19a and 19b and the formic acid recovery mechanism 50d are used.
It is also possible to provide two substrate transfer ports in the heating and melting chamber 11 having the above and to arrange the first and second preliminary exhaust chambers 23 and 24 shown in FIG. 9 in these substrate transfer ports. By adopting such a structure, it becomes possible to continuously supply the semiconductor wafer 1 to the heating and melting chamber 11 with the carrying direction of the semiconductor wafer 1 set to one direction, and the mass productivity of solder bump formation is increased. 22, the same reference numerals as those in FIG. 9 indicate the same elements.

In the above apparatus, the heating and melting chamber 11
Inside, formic acid is supplied onto the semiconductor wafer 1 along the gas flow. As a mechanism for supplying formic acid to the solder bumps 6 on the semiconductor wafer 1, other structures may be adopted. For example, as shown in FIG. 23, the heating and melting chamber 1
1 and the preliminary exhaust chamber 24 between the formic acid (carboxylic acid) supply chamber 3
4 is provided, and a gate valve 35 is attached between the formic acid supply chamber 34 and the preliminary exhaust chamber 24. The heating table 11a may be movably arranged in the formic acid supply chamber 34, and the formic acid mist spray 16x may be attached to the central region of the upper portion of the formic acid supply chamber 34. According to such a mechanism, the heating table 11a on which the semiconductor wafer 1 is mounted is attached to the preliminary exhaust chamber 24.
While moving from the heating to melting chamber 11, the formic acid solution or formic acid-containing solution discharged from the formic acid mist sprayer 16x is supplied onto the semiconductor wafer 1 for coating. The formic acid supply chamber 34 is preferably depressurized.

According to this, the supply of formic acid to the plurality of solder bumps 6 on the semiconductor wafer 1 can be uniformly applied over the entire surface. The formic acid remaining on the surface of the solder bump 6 after the solder bump 6 is heated and melted and solidified is removed by the method described in the ninth and tenth embodiments. When the formic acid supply chamber 34 is arranged in front of the heating / melting chamber 11, the mechanism for sharing the formic acid to the heating / melting chamber 11 may be omitted. (Twelfth Embodiment) An apparatus in which a plurality of heating / melting chambers described above are arranged in parallel and a pre / post-heating mechanism for these heating / melting chambers is made common will be described below.

24 and 25, the semiconductor wafer,
The sample transfer chamber 5 adjacent to the sample stocker 52 that accommodates the sample w such as an electronic component via the first gate valve 53.
4 includes a transport mechanism 54a and a pre / post heating mechanism 54.
b is arranged. The transport mechanism 54a has a pre / post-heating mechanism 54 with the first gate valve 53 opened.
It has a structure in which the sample w on b is taken in and out of the sample stocker 52.

Further, the sample transfer chamber 54 is connected to the first and second heating / melting chambers 55 and 56 via second and third gate valves 57 and 58, respectively. The transfer mechanism 54a in the sample transfer chamber 54 is provided with the second gate valve 5
7, the sample w is transported from the pre / post heating mechanism 54b to the heating table 11a in the first heating / melting chamber 55 or from the heating table 11a to the pre / post heating mechanism 54b, or The sample w is transferred from the pre / post-heating mechanism 54b to the heating table 11a in the second heating / melting chamber 56 or from the heating table 11a to the pre / post-heating mechanism 54b with the third gate valve 58 opened. Are controlled to carry the. An exhaust mechanism 59 for reducing the pressure inside the sample transfer chamber 54 is connected to the sample transfer chamber 54.

The first and second heating / melting chambers 5 are
5, 56, the same reference numerals as those in FIG. 14 indicate the same elements. In the apparatus described above, the first gate valve 53 is opened and closed when a sample is taken in and out between the sample transfer chamber 54 and the sample stocker 52, and when the sample w is taken in and out of the first heating and melting chamber 55. The second gate valve 57 is opened and closed, and the third gate valve 58 is opened and closed when the sample 2 is put in and taken out of the second heating and melting chamber 56.

In the above device, the first and second
The inside of the heating / melting chambers 55, 56 is depressurized to a predetermined pressure by the exhaust mechanism 50. In such a state, after the sample w in the sample stocker 52, for example, the semiconductor wafer 1 is put into the sample transfer chamber 54, the inside of the sample transfer chamber 54 is depressurized to a predetermined pressure, and further the transfer mechanism 54a is operated. The semiconductor wafer 1 is placed on the pre / post heating mechanism 54b and heated to a predetermined temperature. Subsequently, the heated semiconductor wafer 1 is placed on the heating table 11a in the first heating / melting chamber 55 using the transfer mechanism 54a.

While the semiconductor wafer 1 is being processed in the first heating / melting chamber 55, the sample stocker 52
Another semiconductor wafer 1 therein is loaded into the sample transfer chamber 54 by the transfer mechanism 54a, the inside of the sample transfer chamber 54 is depressurized to a predetermined pressure, and the transfer mechanism 54a is operated to transfer the semiconductor wafer 1 to the sample transfer chamber. Pre / post heating mechanism 5 in 54
It is placed on 4b and preheated to a predetermined temperature.

Subsequently, the heated semiconductor wafer 1 is placed on the heating table 11a in the second heating / melting chamber 56 by using the transfer mechanism 54a. While the semiconductor wafer 1 is being transported into the second heating / melting chamber 56, formic acid is introduced in the first heating / melting chamber 55 to heat-melt the solder bumps 6 on the semiconductor wafer 1 and further solidify them. It Then, while the semiconductor wafer 1 is being processed in the second heating / melting chamber 56, the semiconductor wafer 1 in the first heating / melting chamber 55 is returned onto the pre / post-heating mechanism 54b by the transfer mechanism 54a. After being post-heated to a predetermined temperature, it is returned to the sample stocker 52. The transport mechanism 54a uses another semiconductor wafer 1 as the sample stocker 5
It is taken out from the sheet 2 and conveyed to the pre / post-heating mechanism 54b. Then, the heated semiconductor wafer 1 is transferred into the first heating / melting chamber 55.

Next, the transport mechanism 54a returns the semiconductor wafer 1 in the second heating / melting chamber 56 to the pre / post heating mechanism 54b, heats it under predetermined conditions, and then returns it to the sample stocker 52. After that, the transport mechanism 54a takes out the unprocessed semiconductor wafer 1 from the sample stocker 52, places it on the pre / post-heating mechanism 54b, and then places it on the heating table 11a in the second heating / melting chamber 56.

The above-described transfer and heating operations of the semiconductor wafer 1 are repeatedly performed, and one heating / melting chamber 55 is heated.
While the sample is being processed in (56), the semiconductor wafer 1 is exchanged into the other heating and melting chamber 56 (55), so that the processing efficiency is increased and the number of processed wafers per hour is increased. . By the way, in the apparatus shown in FIGS. 24 and 25, the loading of the sample w into the heating and melting chambers 55 and 56 and the loading and unloading of the sample w from the heating and melting chambers 55 and 56 follow the same route, so Not taken, the structure is not complicated. However, since the sample w cannot be carried in and out of the heating and melting chambers 55 and 56 at the same time, there is a possibility that the sample w cannot be carried in and out smoothly depending on the processing time in the heating and melting chambers 55 and 56. is there.

Therefore, as shown in FIGS. 26 and 27, a common carry-in chamber and a common carrying chamber may be separately provided on the sample loading and unloading sides of the plurality of heating and melting chambers. 26 and 27
At the sample loading side and the sample unloading side of the first heating / melting chamber 61, the first gate valve 62 and the second gate valve 62 are provided, respectively.
Of the second heating and melting chamber 64, and a third gate valve 65 and a fourth gate valve 66 are attached to the sample loading side and the loading side of the second heating and melting chamber 64, respectively.

The first and second heating / melting chambers 61 and 64 are respectively connected to the first and third gate valves 6 and 6.
It is connected to a common sample carry-in chamber 67 via 2, 65. In the sample carry-in chamber 67, a transport mechanism 67a, a preheating mechanism 67b, and a sample stocker 67c for supply are arranged, and an exhaust mechanism 67d is further connected. Also,
The first and second heating / melting chambers 61 and 64 are connected to a common sample unloading chamber 68 via second and fourth gate valves 63 and 66, respectively. A transport mechanism 68a, a post-heating mechanism 68b, and a sample stocker 68c for recovery are arranged in the sample unloading chamber 68, and the exhaust mechanism 6 is further provided.
8d is connected.

26 and 27, the same reference numerals as those in FIG. 14 indicate the same elements. In the sample carry-in chamber 67 of the apparatus shown in FIGS. 26 and 17, the sample w in the sample stocker 67c for supply, for example, the semiconductor wafer 1 is placed on the pre-heating mechanism 68b by the carrying mechanism 67a under predetermined conditions. After being heated, it is placed on the heating table 11a in the first or second heating / melting chamber 61, 64 through the first or third gate valve 62, 65 by the transfer mechanism 67a. Further, the semiconductor wafer 1 that has been processed in the first or second heating / melting chamber 61, 64 is passed through the second or fourth gate valve 63, 66 to bring out the sample unloading chamber 6
It is placed on the post-heating mechanism 68b by the transport mechanism 68a in the apparatus 8 and heated under a predetermined condition, and then stored in the sample stocker 68c for recovery.

Therefore, the plurality of heating and melting chambers 6 are
Since the sample carry-in mechanism is provided on the carry-in side of 1 and 64 and the sample carry-out mechanism is provided on the carry-out side, the processing time can be shortened such that the sample can be taken in and out at the same time and the replacement cycle of the sample stocker 67c is shortened. In the ninth to twelfth embodiments, formic acid was used when heating and melting the solder, but other carboxylic acid may be used.

Further, as the solder material in each of the above-described embodiments, lead-tin solder containing tin at 40 at.% Or less and tin at 80 at.
% Or more lead-free solder, indium 40 at.%
There are solders containing the above, solders containing lead or tin, lead-tin solders, tin-silver containing solders, and the like. (Supplementary Note 1) A step of forming a solder layer on a metal film of a semiconductor device, a step of arranging the semiconductor device and the solder layer in an atmosphere containing a carboxylic acid and having a reduced pressure, and the solder in the atmosphere. And a step of heating and melting the layer, the method for manufacturing a semiconductor device. (Supplementary Note 2) The carboxylic acid is formic acid, and the formic acid is
The method of manufacturing a semiconductor device according to appendix 1, wherein the solder layer is supplied onto the solder layer before being heated and melted. (Supplementary Note 3) The carboxylic acid is formic acid, and after the solder layer is heated and melted, the solder is held for a predetermined time at a first temperature below the melting point of the solder and above the boiling point of formic acid. Alternatively, the method of manufacturing the semiconductor device according to attachment 2. (Supplementary Note 4) A step of forming a solder layer on a metal film of a semiconductor device, a step of applying a mixed solution containing formic acid on the solder layer in a depressurized atmosphere, and a step of heating and melting the solder layer. And a step of holding the solder layer for a predetermined time at a first temperature lower than the melting point of the solder and not lower than the boiling point of formic acid, the method for manufacturing a semiconductor device. (Supplementary note 5) The method for producing a semiconductor device according to Supplementary note 2 or Supplementary note 4, wherein the formic acid is supplied onto the solder layer by introducing a mixed solution containing formic acid into the atmosphere. (Supplementary Note 6) The method for producing a semiconductor device according to Supplementary Note 5, wherein the mixed solution is mixed with an inert gas and introduced into the atmosphere. (Supplementary Note 7) When holding the solder layer at the first temperature, the pressure in the atmosphere is set to 1500 Pa or less, and the semiconductor device according to any one of Supplementary Note 3 and Supplementary Note 4 is added. Production method. (Supplementary note 8) The semiconductor device according to any one of Supplementary note 3, Supplementary note 4, and Supplementary note 7, wherein the atmosphere is exhausted when the solder layer is held at the first temperature. Method. (Supplementary Note 9) The method for producing a semiconductor device according to Supplementary Note 1, wherein only carboxylic acid is introduced as a reducing agent into the atmosphere. (Supplementary Note 10) The method for producing a semiconductor device according to Supplementary Note 1, wherein the carboxylic acid is obtained by vaporizing a solution in which the carboxylic acid is dissolved or by vaporizing a mixed solution containing the carboxylic acid. . (Supplementary Note 11) The method for producing a semiconductor device according to Supplementary Note 10, wherein an organic solvent having a boiling point of 150 ° C. or lower or water is used for the mixed liquid. (Supplementary Note 12) The composition of the solder bump is any one of lead-tin solder containing 40% or less tin, solder containing 80% or more tin and not containing lead, or solder containing 40% or more indium. 12. The method for manufacturing a semiconductor device according to any one of appendices 1 to 11. (Supplementary Note 13) The semiconductor device according to Supplementary Note 1, wherein a gas containing the carboxylic acid or a mixed solution containing the carboxylic acid is introduced into the atmosphere as a pretreatment for heating and melting the solder bumps. Method. (Supplementary Note 14) A step of placing a solder exposed from an electronic component on an adherend, and arranging the electronic component and the adherend in an atmosphere containing a carboxylic acid and having a reduced pressure to heat the solder and the adherend. And a step of joining the electronic components. (Supplementary Note 15) The method of mounting an electronic component according to Supplementary Note 14, wherein the carboxylic acid is formic acid, and the formic acid is supplied onto the solder before heating and melting the solder. (Additional remark 16) The above-mentioned carboxylic acid is formic acid, and after the solder is melted by heating, the solder is held for a predetermined time at a first temperature that is lower than the melting point of the solder and is higher than the boiling point of formic acid. Mounting method of electronic parts described in. (Supplementary Note 17) The method for mounting an electronic component according to Supplementary Note 15 or Supplementary Note 16, wherein the formic acid is supplied onto the solder by introducing a mixed solution containing formic acid into the atmosphere. Note that the mounting method of the electronic component described in appendix 16 may be characterized in that the atmosphere is exhausted when the solder layer is held at the first temperature. (Supplementary note 18) The adherend is a metal film exposed on any of a ceramic substrate, a printed circuit board, or an insulating layer having a heat resistant temperature of 200 ° C. or higher.
Mounting method of electronic parts described in. (Supplementary note 19) The mounting method for electronic components according to supplementary note 14, wherein only carboxylic acid is introduced as the reducing gas into the atmosphere. (Supplementary Note 20) Mounting of the electronic component according to Supplementary Note 14, wherein a gas containing the carboxylic acid or a mixed solution containing the carboxylic acid is introduced into the atmosphere as a pretreatment for heating and melting the solder bumps. Method. (Supplementary Note 21) A chamber for containing a heating target device in which solder is exposed, a heater mounted in the chamber for heating the solder, an exhaust unit for decompressing the chamber, and A heating and melting treatment apparatus comprising: a carboxylic acid supply means for supplying a carboxylic acid into the chamber. (Supplementary Note 2 2) The heating and melting treatment apparatus according to Supplementary Note 21, wherein the carboxylic acid supply means has a pipe connected to the chamber and having corrosion resistance to the carboxylic acid. (Supplementary Note 23) The carboxylic acid supply means has a tube for releasing the carboxylic acid, and a heating means for promoting vaporization of the carboxylic acid is provided near the tip of the tube. The heating and melting treatment apparatus according to attachment 21. (Supplementary Note 24) The heating and melting treatment apparatus according to Supplementary Note 23, wherein the heating temperature of the heating means is set in the range of 50 to 110 ° C. (Supplementary note 25) The heat melting treatment according to Supplementary note 21, wherein the carboxylic acid supply means has either a structure for vaporizing the carboxylic acid solution or a structure for mixing the carboxylic acid solution and an inert gas. apparatus. (Supplementary Note 26) A chamber for containing a heating target device in which solder is exposed, a heater mounted in the chamber for heating the solder, an exhaust unit for decompressing the chamber, and A heating and melting treatment apparatus comprising: a coating means for coating a carboxylic acid or a carboxylic acid-containing solution on the solder before inserting the heating target apparatus into the chamber. (Supplementary note 27) The heating and melting treatment apparatus according to supplementary note 26, wherein the coating means is a means for passing through a region containing the carboxylic acid or the carboxylic acid-containing solution sprayed in a mist form. (Appendix 28) The carboxylic acid is formic acid, and a recovery mechanism for recovering formic acid is provided or attached to the intake side or the exhaust side of the exhaust means.
1 or the heating and melting treatment apparatus described in Appendix 26. (Supplementary note 29) The heating and melting treatment apparatus according to supplementary note 28, wherein the recovery mechanism has a structure in which the gas exhausted from the chamber is passed through the solution. (Supplementary note 30) The heating and melting treatment apparatus according to supplementary note 29, wherein the solution is water or alcohol. (Additional remark 31) The carboxylic acid is formic acid, and a decomposition mechanism for decomposing formic acid is provided or attached to the intake side or the exhaust side of the exhaust means.
1 or the heating and melting treatment apparatus described in Appendix 26. (Supplementary note 32) The heating and melting treatment apparatus according to supplementary note 27, wherein the decomposition mechanism has a structure for heating the gas exhausted from the chamber to 200 ° C. or higher. (Appendix 33) Another chamber is adjacent to the chamber, and a transport mechanism for transporting the heating and melting target device is provided in these chambers.
1 or the heating and melting treatment apparatus described in Appendix 26. (Supplementary note 34) The heating and melting treatment apparatus according to supplementary note 33, wherein a preheating mechanism is provided in the another chamber.

In addition, in the heating and melting apparatus as described in appendix 21 or appendix 26, (1) the exhaust means is an exhaust pump having corrosion resistance to formic acid, or (2) heating by the heater. After melting, the heating target device further has a cooling mechanism for cooling the device to be heated to the melting point of the solder or less within 1 minute, or (3) the carboxylic acid supply means is a carboxylic acid gas supply mechanism or a carboxylic acid gas supply mechanism. (4) Alternatively, the chamber may have at least one of a cooling mechanism, a vacuum gauge, and a pressure adjusting mechanism, and (5) the carboxylic acid gas. In the supply mechanism or the carboxylic acid mixed solution supply mechanism,
A flow rate adjusting mechanism may be attached.

[0120]

According to the above mentioned way the present invention, and forming a solder bump on the adherend, the solder of the electronic component in the step of mounting the adherend, in a vacuum atmosphere including ants acid Since the mechanism for heating and melting the solder is provided, the oxide film on the surface of the adherend is removed and no residue is left, so that the bump surface shape can be improved or the solder joint portion can be improved in shape. Moreover, it is possible to suppress the occurrence of voids in the solder bumps and solder joints. Furthermore, the phenomenon of embrittlement of the adherend does not occur, and peeling of the adherend can be prevented.

[0121] Prevention in the heat melting treatment apparatus for carrying out such processing, ants acid recovery mechanism on the exhaust side of the heat melting chamber, since the mounting ants acidolysis mechanism, that the ants acid airborne it can. Further, since providing a heating mechanism for heating the ants acid moiety to release an ant acid into the chamber, ants acid in the solder surface after solder heating and melting to prevent the ant acid becomes droplet state the solder surface Is less likely to remain and solder reoxidation is prevented.

[Brief description of drawings]

FIG. 1 is a diagram showing a relationship between temperature and vapor pressure of a carboxylic acid used in the present invention.

FIG. 2 is a cross-sectional view showing a process of forming solder bumps in the semiconductor device of the embodiment of the present invention.

FIG. 3 is a cross-sectional view showing another solder bump in the semiconductor device according to the embodiment of the present invention.

FIG. 4 is a configuration diagram of a heating and melting treatment apparatus used for heating and melting solder bumps of a semiconductor device according to a second embodiment of the present invention.

FIG. 5 is a configuration diagram of a heating and melting processing apparatus used for heating and melting solder bumps of a semiconductor device according to a third embodiment of the present invention.

FIG. 6 is a configuration diagram of a heating and melting treatment apparatus used for heating and melting solder bumps of a semiconductor device according to a fourth embodiment of the present invention.

FIG. 7 is a configuration diagram of a heating and melting treatment apparatus used for heating and melting solder bumps of a semiconductor device according to a fifth embodiment of the present invention.

FIG. 8 is a configuration diagram of a heating and melting processing apparatus used for heating and melting solder bumps of a semiconductor device according to a sixth embodiment of the present invention.

FIG. 9 is a configuration diagram of a heating and melting processing apparatus used for heating and melting solder bumps of a semiconductor device according to a seventh embodiment of the present invention.

FIG. 10 is a configuration diagram showing an example of a heating and melting treatment apparatus used for mounting an electronic component module according to an eighth embodiment of the present invention.

FIG. 11 is a sectional view showing mounting of an electronic component module according to an eighth embodiment of the present invention.

FIG. 12 is a flowchart showing a solder heating and melting step of a ninth embodiment of the present invention.

FIG. 13 is a flowchart showing a solder heating and melting step of a tenth embodiment of the present invention.

FIG. 14 is a configuration diagram showing a first example of a heating and melting treatment apparatus used for heating and melting solder according to an eleventh embodiment of the present invention.

FIG. 15 is a side view showing a heating mechanism for a formic acid gas or a formic acid solution of the heating and melting treatment apparatus of the eleventh embodiment of the present invention.

FIG. 16 is a configuration diagram showing a formic acid recovery mechanism of the heating and melting treatment apparatus of the eleventh embodiment of the present invention.

FIG. 17 is a side view showing a structure of a screw used for an exhaust pump of the heating and melting treatment apparatus of the eleventh embodiment of the present invention.

FIG. 18 is a configuration diagram showing a second example of the heating and melting processing apparatus used for solder heating and melting according to the eleventh embodiment of the present invention.

FIG. 19 is a sectional view showing a formic acid recovery mechanism used in the heating and melting treatment apparatus of the eleventh embodiment of the present invention.

FIG. 20 is a configuration diagram showing a third example of a heating and melting treatment apparatus used for heating and melting solder according to an eleventh embodiment of the present invention.

FIG. 21 is a configuration diagram showing a fourth example of a heating and melting treatment apparatus used for heating and melting solder according to an eleventh embodiment of the present invention.

FIG. 22 is a configuration diagram showing a fifth example of a heating and melting treatment apparatus used for heating and melting solder according to an eleventh embodiment of the present invention.

FIG. 23 is a configuration diagram of a formic acid supply chamber used in the heating and melting treatment apparatus of the eleventh embodiment of the present invention.

FIG. 24 is a top view showing a first example of the heating and melting treatment apparatus of the twelfth embodiment of the present invention.

FIG. 25 is a side view showing a first example of the heating and melting treatment apparatus of the twelfth embodiment of the present invention.

FIG. 26 is a top view showing a second example of the heating and melting treatment apparatus of the twelfth embodiment of the present invention.

FIG. 27 is a side view showing a second example of the heating and melting treatment apparatus of the twelfth embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate (semiconductor wafer), 2 ... Insulating film, 3 ... Electrode pad, 4 ... Cover film, 5 ... Base metal film (adherend),
6 ... Solder bumps, 10 ... Semiconductor device transfer chamber, 11 ... Heating / melting chamber, 11a ... Heating base, 11b ... Gas introduction pipe,
11c ... Gas supply source, 11d ... Gas introduction mechanism, 11e ...
Gas supply source, 11f ... Exhaust port, 11g ... Exhaust device, 11
h ... cooler, 12 ... gate valve, 13 ... vacuum gauge,
14a ... Solution vaporizer, 14b ... Gas pressure adjusting unit, 14
c ... Gas flow rate adjusting valve, 15 ... Pressure adjusting mechanism, 16a
... Liquid tank, 16b ... Liquid flow rate adjusting valve, 16c ... Solution / mist introduction pipe, 16d ... Inert gas supply source, 16e ... Inert gas introduction pipe, 16f ... Mixing part, 17 ... Infrared lamp heater, 18a ... Gas introduction Tube, 18b ... Gas supply mechanism, 1
8c ... Mass flow controller, 19a, 19b ... Heater 21, 22, 27 ... Gate valve, 23, 24 ... Pre-evacuation chamber, 25 ... Gate valve, 26 ... Carrying-in chamber, 28 ...
Carry-out chamber, 30 ... exhaust device, 31 ... transport mechanism, 32, 33
... Preheating mechanism, 34 ... Formic acid supply chamber, 40 ... Electronic component module, 41 ... Solder bump, 42 ... Wiring board, 43 ...
Wiring, 50 ... Exhaust device, 50a, 50c, 50g ... Exhaust pipe, 50b ... Exhaust pump, 50d ... Formic acid recovery mechanism, 51
... Formic acid decomposition mechanism, 52 ... Sample stocker, 53, 57,
58 ... Gate valve, 54 ... Sample transfer chamber, 54a ... Transfer mechanism, 54b ... Pre / post heating mechanism, 55, 56 ... Heating / melting chamber, 61, 65 ... Heating / melting chamber, 62,
63, 65, 66 ... Gate valve, 67 ... Sample carry-in chamber,
67a ... transport mechanism, 67b ... preheating mechanism, 67c ... sample stocker, 68 ... sample unloading chamber, 68a ... transport mechanism,
68b ... Post-heating mechanism, 68c ... Sample stocker.

Front Page Continuation (72) Inventor Kunio Kodama 4 Kadota-cho Industrial Park, Aizuwakamatsu City, Fukushima Prefecture, Fujitsu Tohoku Electronics Co., Ltd. Incorporated (72) Inventor Masataka Mizukoshi 4-1-1 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Limited (56) Reference JP-A-11-233934 (JP, A) JP-A-5-337677 (JP, A) JP-A-6-310849 (JP, A) JP-A-7-47466 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H05K 3/34 B23K 1 / 00-33/00

Claims (13)

(57) [Claims] 1. A chamber for containing a heating target device in which solder is exposed, a heater mounted in the chamber for heating the solder, and an exhaust unit for decompressing the chamber. With a tube for supplying formic acid in the chamber,
Formic acid supply means having a heater to promote the vaporization of the formic acid fed from the tube, or attached provided in the intake or exhaust side of said exhaust means
A recovery machine that recovers the vaporized formic acid by dissolving it in a solution
A heating and melting treatment apparatus having a structure . 2. The heat melting treatment apparatus according to claim 1, wherein the pipe is connected to the chamber and is made of a material having a corrosion resistance to the formic acid . 3. The heating and melting treatment apparatus according to claim 1 or 2, wherein the heating temperature of the heater is set in a range of 50 to 110 ° C. Wherein said formic acid supply means, structure vaporize the formic acid solution or heat-melting treatment apparatus according to claim 1, characterized in that it comprises any of the structure for mixing the formic acid solution and an inert gas . 5. A chamber for containing a heating target device in which solder is exposed, a heater mounted in the chamber for heating the solder, and an exhaust unit for decompressing the chamber. and applying means for applying a formic <br/> or formic acid-containing solution prior to inserting the heating target device into said chamber to said solder, intake or provided in the exhaust side or the mounting of the exhaust means
A recovery machine that recovers the vaporized formic acid by dissolving it in a solution
A heating and melting treatment apparatus having a structure . 6. The heating and melting treatment apparatus according to claim 5, wherein the coating means is a means for passing through a region containing the formic acid or the formic acid- containing solution sprayed in a mist form. Wherein said recovery mechanism, heating and melting apparatus as claimed in claim 1 or claim 5 further characterized in that has a structure through which gas exhausted from the chamber into the solution. 8. The heat melting treatment apparatus according to claim 7 , wherein the solution is water or alcohol. 9. A chamber for containing a device to be heated whose solder is exposed, a heater mounted in the chamber for heating the solder, and an exhaust unit for decompressing the chamber. With a tube for supplying formic acid in the chamber,
Formic acid supply means having a heater to promote the vaporization of the formic acid fed from the tube, the intake or provided or mounted is on the exhaust side, the formic acid
A heating and melting treatment apparatus having a decomposition mechanism for decomposing . 10. A chamber for containing a heating target device in which solder is exposed, a heater mounted in the chamber for heating the solder, and an exhaust unit for decompressing the chamber. and applying means for applying the formic acid or formic acid <br/> containing solution prior to inserting the heating target device into said chamber to said solder, intake or provided or mounted is on the exhaust side, the formic acid
A heating and melting treatment apparatus having a decomposition mechanism for decomposing . 11. The heating and melting treatment apparatus according to claim 9 , wherein the decomposition mechanism has a structure for heating the gas exhausted from the chamber to 200 ° C. or higher. 12. The chamber is adjacent to another chamber, and a transport mechanism for transporting the apparatus for heating and melting is provided in these chambers.
The heating and melting treatment apparatus described in 1, 5 , 9, and 10. 13. The heat melting processing apparatus according to claim 12, wherein a preheating mechanism is provided in the another chamber.