CN107342242A - Substrate board treatment and substrate processing method using same - Google Patents
Substrate board treatment and substrate processing method using same Download PDFInfo
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- CN107342242A CN107342242A CN201610618085.9A CN201610618085A CN107342242A CN 107342242 A CN107342242 A CN 107342242A CN 201610618085 A CN201610618085 A CN 201610618085A CN 107342242 A CN107342242 A CN 107342242A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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Abstract
The present invention discloses a kind of substrate board treatment and substrate processing method using same, and it can be handled 2 substrates simultaneously by same processes, so as to most simplified heat treatment step and improve productivity.Therefore, the substrate board treatment of the present invention includes：Multiple chambers (100,200,300,400,500,600), are internally individually insulated substrate and carry out PROCESS FOR TREATMENT；Control unit, control is performed as follows：Make 2 chambers (100,200 in the multiple chamber (100,200,300,400,500,600)；300、400；500th, 600) match respectively and carry out identical PROCESS FOR TREATMENT.
Description
Technical field
The present invention relates to a kind of substrate board treatment and substrate processing method using same, more particularly to one kind can be by making every two
Substrate pairing and handled simultaneously, so as to improve productive substrate board treatment and substrate processing method using same.
Background technology
Generally, in semiconductor substrate formed with welding protuberance to connect electric wire, wire etc..It is (prominent as this weld part
Rise portion (bump)) manufacturing process in one backflow (reflow) technique be by making the melting such as soldered ball, soldering paste make it
It is close to substrate, and the technique for making it have appropriate profile.
In reflux course, it can be made according to specific temperature atmosphere, atmospheric conditions and activity time and want outer
The weld part of shape.In order to maintain this temperature atmosphere or other conditions, the substrate as process object will not be fetched into air
In, and it is known can using with continuous cavity device and be handled by series-operation.
As the prior art on above-mentioned reflux technique, United States Patent (USP) US 7,358,175 is disclosed, and be used for
Realize that its device US 6,827,789 is also disclosed.Also, as another example of reflow method, by the applicant's application
Korean granted patent No. 10-1491992 and No. 10-1406172 has been disclosed.
The above-mentioned reflux proposed in the prior art is configured to, equipped with the multiple chambers for being arranged to circle.At one
Substrate be loaded onto some in multiple chambers after, be shifted into adjacent chamber successively, so as to carry out the heating of substrate, and
And cooled substrate is unloaded after the heating process.
The multiple chamber carries out processing substrate in the state of being isolated from each other, and after processing substrate is carried out, it is more
Individual chamber turns into the state to communicate with each other, so that substrate is shifted into adjacent chamber, then carries out next PROCESS FOR TREATMENT.Can
To pass through the multiple PROCESS FOR TREATMENTs for being repeated in above-mentioned process to carry out for a substrate.
In the case, the treatment conditions of the PROCESS FOR TREATMENT carried out in the multiple chamber and processing time are all different.
For example, can be set to the heating treatment time of substrate, first chamber is 60 seconds, second chamber is 55 seconds, the 3rd chamber
For 50 seconds.And it is possible to be configured to, the highest heating of the first chamber, second chamber, the 3rd chamber and the 4th chamber substrate
Temperature gradually steps up, such as 150 DEG C, 170 DEG C, 250 DEG C.
As described above, the activity time of each chamber is all different from each other, therefore in order to by positioned at the base of each chamber interior
Plate is transferred to next chamber, the substrate of second chamber and the 3rd chamber need to be waited for until activity time it is most long first
Substrate in chamber, which is processed, to be finished, and therefore, output (throughput) is with the work in the most long first chamber of activity time
On the basis of 60 seconds sequence time.
In the case where handling substrate by method as described above, in a chamber after completing substrate processing, moving
During delivering to next chamber, the temperature of substrate can decline, therefore in next chamber need elapsed time so that substrate
Temperature rises, therefore improves productive aspect in shortening substrate process time and limitation be present.
Also, gradually risen in the Temperature Distribution (profile) for the substrate being heat-treated with oblique line (slope) shape
In the case of 220 DEG C, favourable is maintained to the shape of soldered ball, but become as described above with the quantity for the chamber being heat-treated
More, Temperature Distribution turns into the form risen in the stage, so the problem of causing the shape quality of soldered ball to reduce.
The content of the invention
The present invention proposes that its object is to provide following substrate board treatment and base in order to solve above-mentioned problems
Board processing method：Handle 2 substrates and most simplified heat treatment step simultaneously in same processes, therefore production effect can be improved
Rate.
In order to solve technical problem as described above, the present invention provides a kind of substrate board treatment, including：Multiple chambers
100th, 200,300,400,500,600, internally it is individually insulated substrate and carries out PROCESS FOR TREATMENT；Control unit, hold as follows
Row control：Make 2 chambers 100,200 in the multiple chamber 100,200,300,400,500,600；300、400；500、
600 match and carry out identical PROCESS FOR TREATMENT respectively.
The multiple chamber 100,200,300,400,500,600 is by being sequentially arranged into circular first chamber 100, second
Chamber 200, the 3rd chamber 300, the 4th chamber 400, the 5th chamber 500 and the 6th chamber 600 are formed, and the control unit is with as follows
Mode performs control：After being processed separately the substrate different from each other in 2 chambers of carry out identical PROCESS FOR TREATMENT, respectively
2 adjacent chambers are shifted into, then carry out next PROCESS FOR TREATMENT.
Cooling end is respectively equipped with the first chamber 100 and second chamber 200, the cooling end makes to be processed
A pair of substrates be respectively loaded, and in the 5th chamber 500 and the 6th chamber 600 carry out substrate heating after
The substrate transferred respectively is cooled down, and is then unloaded.
Heating part is respectively equipped with the 3rd chamber 300 and the 4th chamber 400, with to from the first chamber 100
A pair of the substrates transferred respectively with second chamber 200 carry out first time heating；In the 5th chamber 500 and the 6th
Chamber 600 is respectively equipped with heating part, with to a pair transferred respectively from the 3rd chamber 300 and the 4th chamber 400
Substrate carries out second and heated.
The substrate board treatment has：Turntable, rotated with the first chamber to the 6th chamber 100,200,
300th, the substrate is transferred between 400,500,600；The turntable is rotated to realize following purpose：Make in each chamber
Inside obtains the substrate of PROCESS FOR TREATMENT across chamber adjacent thereto, is then transferred to next chamber.
The control unit controls the turntable as follows：Make the turntable 120 degree of rotation every time, will be located at described
Base plate transfer inside first chamber to the 6th chamber 100,200,300,400,500,600 is extremely used for the chamber for carrying out subsequent processing
Room.
In addition, in order to solve technical problem as described above, the present invention also provides a kind of substrate processing method using same, in multiple chambers
Be individually insulated in room 100,200,300,400,500,600 in the state of the substrate and carry out PROCESS FOR TREATMENT, this method include with
Lower step：A) the multiple chamber 100,200,300,400,500,600 is made to be carried out in a manner of 2 chambers match for described
The identical PROCESS FOR TREATMENT of substrate；B) in a) step complete PROCESS FOR TREATMENT a pair of substrates be transplanted on respectively it is adjacent
Other 2 chambers, then carry out other PROCESS FOR TREATMENT.
The multiple chamber 100,200,300,400,500,600 is by being sequentially arranged into circular first chamber 100, second
Chamber 200, the 3rd chamber 300, the 4th chamber 400, the 5th chamber 500 and the 6th chamber 600 are formed, and are loaded onto described first
Chamber 100 and a pair of substrates of second chamber 200 are shifted into the 3rd chamber 300 and the 4th chamber 400, Ran Houjin respectively
Go and heat for the first time, the pair of of heating for the first time is completed in the 3rd chamber 300 and the 4th chamber 400
Substrate is shifted into the 5th chamber 500 and the 6th chamber 600 respectively, then carries out second and heats, described the
Second of the pair of substrate heated is completed in five chambers 500 and the 6th chamber 600 and is shifted into described first respectively
Chamber 100 and second chamber 200 and cooled down, be then unloaded.
In the first chamber 100 and second chamber 200 equipped with pedestal, the pedestal is used to dispose the substrate, and has
There is the cooling end for cooling down the substrate, cool down the cooling procedure of the substrate by the first cooling procedure and the second cooling procedure
Form, first cooling procedure performs cooling in the state of isolating in the bottom surface of the substrate from the pedestal to upside, institute
Second of cooling procedure is stated then to perform in the state of the upper surface of the pedestal is touched after first cooling procedure
Cooling.
The substrate processing method using same is further comprising the steps of：In the 3rd chamber 300 and the 4th chamber 400, inciting somebody to action
The substrate is heated to after the first design temperature, maintains setting time, in the 5th chamber 500 and the 6th chamber 600,
After the substrate is heated above into the second design temperature of first design temperature, setting time is maintained.
According to the present invention it is possible to by handling 2 substrates simultaneously in same processes and most simplified heat treatment step, so that
Improve production efficiency.
And it is possible to make the Temperature Distribution of substrate that oblique line shape be presented, so as to be stably formed the shape of soldered ball.
Brief description of the drawings
Fig. 1 is the skeleton diagram for the composition for showing the substrate board treatment according to the present invention.
Fig. 2 is to show to be equipped with the figure of the state of substrate on the pedestal top of the substrate board treatment according to the present invention.
Fig. 3 is the flow chart for showing the substrate processing method using same according to the present invention.
Symbol description
100：First chamber 110：Pedestal
120：Cooling end 130：Pin
200：Second chamber 300：3rd chamber
400：4th chamber 500：5th chamber
600：6th chamber
Embodiment
Hereinafter, the substrate board treatment and substrate processing method using same of the present invention are described in detail referring to the drawings.
Referring to Figures 1 and 2 and to being illustrated according to the substrate board treatment of the present invention.
The substrate board treatment 1 of the present invention includes：Multiple chambers 100,200,300,400,500,600, internally distinguish
Isolated substrate and carry out PROCESS FOR TREATMENT；Control unit (not shown), by control make the multiple chamber 100,200,300,400,
500th, 600 matched and (matched two-by-two) in units of two chambers and carry out identical PROCESS FOR TREATMENT.
Reflow process can be carried out in the substrate board treatment 1, and can be by being sequentially arranged into the first of circle
Chamber to the 6th chamber 100,200,300,400,500,600 is formed.
It is connected with the side of the substrate board treatment 10 including substrate preloading portion 2a's and base plate transfer portion 2b
Front-end module (EFEM；Equipment Front End Module)2.
The function of the front-end module 2 is as follows：Using the transfer robot (not shown) for being provided to base plate transfer portion 2b
The first chamber 100 and second chamber of substrate board treatment 1 will be loaded into the untreatment base of substrate preloading portion 2a preloadings
200, or the substrate being disposed in substrate board treatment 1 is unloaded and preloading from first chamber 100 and second chamber 200
To substrate preloading portion 2a.Therefore, (do not show equipped with door between front-end module 2 in first chamber 100 and second chamber 200
Go out), so as to be configured to be opened and closed the door in loading and the unloading of substrate.
Loading and the unloading of substrate can be not only performed in the first chamber 100 and second chamber 200, can also be formed
To cool down the substrate being heat treatment by the 3rd chamber to the 6th chamber 300,400,500,600.In the 3rd chamber
300 and the 4th the first time that the first time heating for substrate is carried out in chamber 400 heat, in the 5th chamber 500
With second of the heat treatment that second of heating for substrate is carried out in the 6th chamber 600.As described above, the first chamber is extremely
6th chamber 100,200,300,400,500,600 is configured to match in units of two chambers and perform identical process.
Shown first chamber forms the space of isolation to the 6th chamber 100,200,300,400,500,600 and carried out each other
Process, and finish in the processing substrate of each different process and by base plate transfer to next chamber in the case of, turn into
The space to communicate with each other.
In the first chamber 100 and second chamber 200, moved to carry out processing substrate by means of being provided to substrate
Send portion 2b transfer robot and by a pair of substrates while load, and a pair of substrates to completing to heat are in each chamber
100th, 200 inside carries out cooling treatment simultaneously, so that will be complete by means of being provided to base plate transfer portion 2b transfer robot
A pair of substrates into cooling treatment unload simultaneously.Therefore, the transfer robot is also equipped with a pair of, therefore it is configured to point
It or Zhuan Zai not unload a substrate.Also, in first chamber 100 and second chamber 200 equipped with the bottom surface that can place substrate
Pedestal 110, can be equipped with the cooling end 120 for cooling down substrate in the pedestal 110.Equipped with the insertion pedestal
110 and the pin 130 that can vertically move, substrate W bottom surface is supported and can be moved up and down by the pin 130.
A substrate for being loaded onto the first chamber is shifted into the 3rd chamber 300, is loaded onto second chamber
Another substrate of room is shifted into the 4th chamber 400.Performed in the 3rd chamber 300 and the 4th chamber 400 identical
Heat treatment step.Wherein, identical heat treatment step represents the temperature conditionss for being heated to substrate and heating
The process conditions such as time all identical processes.In order to carry out above-mentioned heat treatment step, in the 3rd chamber 300 and the 4th chamber 400
Equipped with pedestal (not shown) as shown in Figure 2 to place the bottom surface of substrate, and can be equipped with for heating the substrate
Heating part (not shown).
The substrate that heat treatment is completed in the 3rd chamber 300 is shifted into the 5th chamber 500, in the 4th chamber
400 substrates for completing to heat are shifted into the 6th chamber 600.In the 5th chamber 500 and the 6th chamber 600
In, carry out the process conditions such as temperature conditionss and heat time all identical heat treatment steps.In order to carry out this heat treatment step
And can be placed the bottom surface of substrate, can be equipped with pedestal (not shown) and heating part (not shown) as shown in Figure 2.
The heating part of 3rd chamber to the 6th chamber 300,400,500,600 can be provided to the inside of pedestal,
It can be equipped with the upside of each chamber 300,400,500,600.Also, in order to which process gas is ejected into substrate
And handled, can be equipped with spilling a (not shown) in the upside of each chamber 300,400,500,600.
The first chamber can carry out work under vacuum conditions into the 6th chamber 100,200,300,400,500,600
Sequence.In order to perform process as described above, it is connected with each chamber for making the inside of each chamber turn into vacuum state
The vacuum forming units such as vavuum pump.
It can be supplied in the first chamber to the inside of the 6th chamber 100,200,300,400,500,600 for cleaning
The nitrogen of (purging), process gas can be supplied as in the inside of the 3rd chamber to the 6th chamber 300,400,500,600
Formic acid.
The first chamber between the 6th chamber 100,200,300,400,500,600 equipped with for transferring substrate
Turntable (not shown).The substrate that the turntable is loaded into first chamber 100 is transferred to the 3rd chamber 300, the 5th chamber successively
Room 500, first chamber 100.Also, the substrate that the turntable is loaded into second chamber 200 is transplanted on the 4th chamber successively
400th, the 6th chamber 600, second chamber 200.Therefore, control unit made by control the turntable every time rotation 120 degree with
Subsequent processing is carried out after completing process in each chamber 100,200,300,400,500,600.The shape of the turntable and operation
It is on the books in the prior art, it can be appropriately deformed and implemented in the present invention, therefore omit detailed description.
Reference picture 3 and to according to the present invention substrate processing method using same illustrate.
In S10 steps, the first substrate that will be handled by means of the transfer robot of front-end module 2 is loaded into first
Chamber 100, and second substrate is loaded into second chamber 200.Then, the first substrate and second substrate are placed in turntable
Upper surface.
In S20 steps, turntable is set to rotate 120 degree and first substrate is transferred into the 3rd chamber from first chamber 100
300, and second substrate is transferred to the 4th chamber 400 from second chamber 200.
In S30 steps, after first substrate and second substrate are transplanted on into the 3rd chamber 300 and the 4th chamber 400, point
Not Ge Li the 3rd chamber 300 and the 4th chamber 400 and prevent inside it with other chambers.Thereafter, process gas is supplied
To the inside of chamber, and the heating part by means of being equipped with pedestal and to substrate carry out first heat.In the case, may be used
To be configured to, heat for example the temperature of substrate is promoted to as 150 DEG C of the first design temperature and 170 DEG C for the first time.
And it is possible to be configured to, after the first design temperature is heated the substrate to, make scheduled time of state maintenance.
In S40 steps, after the first time heating is completed, turntable rotates 120 degree and transfers first substrate
The 6th chamber 600 is transferred to the 5th chamber 500, and by second substrate.
In S50 steps, after first substrate and second substrate are transferred to the 5th chamber 500 and the 6th chamber 600, point
Not Ge Li the 5th chamber 500 and the 6th chamber 600 and prevent inside it with other chambers.Thereafter, process gas is supplied
To the inside of chamber, and the heating part by means of being equipped with pedestal and second is carried out to substrate and is heated.In the case,
It is configured to, the temperature of substrate is for example promoted to 250 DEG C as the second design temperature by second of heating.Also,
It is configured to, after the second design temperature is heated the substrate to, makes scheduled time of state maintenance.
In S60 steps, after completing described second to heat, turntable rotates 120 degree and transfers first substrate
Second chamber 200 is transferred to first chamber 100, and by second substrate.
In S70 steps, after first substrate and second substrate are transferred to first chamber 100 and second chamber 200, point
Not Ge Li first chamber 100 and second chamber 200 and prevent inside it with other chambers, and by means of cooling end 120 and
Cool down the substrate.
In the case, the cooling of substrate is configured to carry out the first cooling procedure and second of cooling procedure successively.
First cooling procedure is cooled down in the state of isolating in the bottom surface of substrate from pedestal to upside；Described second cooled
Cheng Wei, after first cooling procedure, cooled down in the state of the upper surface of the pedestal is touched.
As shown in Fig. 2 first cooling procedure is configured to, isolate upwardly from the upper table of pedestal 110 in substrate
In the state of cooled down, and in the state of the temperature of substrate is reduced to predetermined extent, substrate is touched pedestal 110
Upper surface, so as to cool down substrate.If the sharp temperature drop of substrate, the quality of soldered ball can be influenceed, therefore can be first
By making substrate be cooled down in the state of the floating of pedestal 110 in cooling procedure, so as to prevent the chilling of substrate.
In S80 steps, after the cooling procedure of completing substrate, open first chamber 100 and second chamber can be passed through
200 door and the substrate that has handled of robot will be transferred and be unloaded to front-end module 2, so as to complete the processing to a substrate.
As set forth above, it is possible to by handling 2 substrates simultaneously in same processes to shorten substrate process time.
I.e., in the prior art, in order that the temperature stage of substrate rise to 150 DEG C, 170 DEG C, 250 DEG C, it is necessary to
The temperature of substrate is risen to each design temperature, be then transferred to next chamber, therefore substrate is produced during transfer
Temperature declines.Substrate is set to rise to design temperature in next chamber in order to compensate the Wen Duxiajiang of this substrate, but this
Need the longer time.
In contrast, for the present invention, can make in the case of the transfer step of no substrate temperature it is continuous on
150 DEG C and 170 DEG C are risen to, therefore compared to a temperature up step for a substrate, activity time can be shortened.Institute
State when heating for the first time, according to prior art, the step of rising to 150 DEG C needs 60 seconds, and rising to 170 DEG C needs 55
Second, therefore the time carried out needed for singlepass is longer activity time, i.e., 60 seconds.In contrast, in the present invention, can carry out
Laser heating, therefore be 90 seconds or so the time required to rising to 170 DEG C after rising to 150 DEG C, therefore with except transferring the time
Outside a process on the basis of, it is necessary to 45 seconds, therefore compared with prior art 60 seconds, activity time can be shortened.
Also, by substrate from the case that a chamber is transferred to next chamber, if with such as prior art compared with
Transfer steps, then the Temperature Distribution of substrate becomes stage more.This stage Temperature Distribution, which can turn into, is stably formed soldered ball
Barrier factors during shape.
Such as the present invention, if reducing substrate heat treatment step, the Temperature Distribution of substrate can be made turn into oblique line
(slope) shape, therefore the shape of soldered ball can be stably formed.
As described above, the present invention is described in detail by taking preferred embodiment as an example, but the invention is not restricted to upper
State embodiment, can right, illustrate and accompanying drawing in the range of be deformed into variform and implement, these
Belong to the present invention.
Claims (10)
1. a kind of substrate board treatment, including：
Multiple chambers (100,200,300,400,500,600), are internally individually insulated substrate and carry out PROCESS FOR TREATMENT；
Control unit, control is performed as follows：Make 2 in the multiple chamber (100,200,300,400,500,600)
Chamber (100,200；300、400；500th, 600) match respectively and carry out identical PROCESS FOR TREATMENT.
2. substrate board treatment as claimed in claim 1, it is characterised in that
The multiple chamber (100,200,300,400,500,600) is by being sequentially arranged into circular first chamber (100), second
Chamber (200), the 3rd chamber (300), the 4th chamber (400), the 5th chamber (500) and the 6th chamber (600) are formed,
The control unit performs control as follows：Make different from each other in 2 chambers of carry out identical PROCESS FOR TREATMENT
After substrate is processed separately, 2 adjacent chambers are shifted into respectively, then carry out next PROCESS FOR TREATMENT.
3. substrate board treatment as claimed in claim 2, it is characterised in that
Cooling end is respectively equipped with the first chamber (100) and second chamber (200),
A pair of substrates that the cooling end makes to be processed are respectively loaded, and in the 5th chamber (500) and the 6th
The substrate for carrying out being transferred respectively after the heating of substrate in chamber (600) is cooled down, and is then unloaded.
4. substrate board treatment as claimed in claim 2, it is characterised in that
Heating part is respectively equipped with the 3rd chamber (300) and the 4th chamber (400), with to from the first chamber
(100) and a pair of substrates transferring respectively of second chamber (200) carry out first time heating；
Heating part is respectively equipped with the 5th chamber (500) and the 6th chamber (600), with to from the 3rd chamber
(300) carry out second with a pair of substrates transferring respectively of the 4th chamber (400) and heat.
5. substrate board treatment as claimed in claim 2, it is characterised in that have：
Turntable, rotated to be transferred in the first chamber between the 6th chamber (100,200,300,400,500,600)
The substrate；
The turntable is rotated to realize following purpose：Make to obtain in the inside of each chamber the substrate of PROCESS FOR TREATMENT across with
Adjacent chamber, be then transferred to next chamber.
6. substrate board treatment as claimed in claim 5, it is characterised in that the control unit controls described turn as follows
Platform：
Make the turntable every time rotation 120 degree, will be located at the first chamber to the 6th chamber (100,200,300,400,
500th, 600) base plate transfer of inside is extremely used for the chamber for carrying out subsequent processing.
7. a kind of substrate processing method using same, the substrate is individually insulated in multiple chambers (100,200,300,400,500,600)
In the state of carry out PROCESS FOR TREATMENT, this method comprises the following steps：
A) the multiple chamber (100,200,300,400,500,600) is made to be carried out in a manner of 2 chambers match for described
The identical PROCESS FOR TREATMENT of substrate；
B) a pair of substrates that PROCESS FOR TREATMENT is completed in a) step are transplanted on other adjacent 2 chambers respectively, then
Carry out other PROCESS FOR TREATMENT.
8. substrate processing method using same as claimed in claim 7, it is characterised in that
The multiple chamber (100,200,300,400,500,600) is by being sequentially arranged into circular first chamber (100), second
Chamber (200), the 3rd chamber (300), the 4th chamber (400), the 5th chamber (500) and the 6th chamber (600) are formed,
A pair of substrates for being loaded onto the first chamber (100) and second chamber (200) are shifted into the 3rd chamber respectively
Room (300) and the 4th chamber (400), first time heating is then carried out,
The pair of substrate difference heated for the first time is completed in the 3rd chamber (300) and the 4th chamber (400)
The 5th chamber (500) and the 6th chamber (600) are shifted into, second is then carried out and heats,
Second of the pair of substrate difference heated is completed in the 5th chamber (500) and the 6th chamber (600)
It is shifted into the first chamber (100) and second chamber (200) and is cooled down, is then unloaded.
9. substrate processing method using same as claimed in claim 8, it is characterised in that
In the first chamber (100) and second chamber (200) equipped with pedestal, the pedestal is used to dispose the substrate, and has
There is the cooling end for cooling down the substrate,
The cooling procedure for cooling down the substrate is made up of the first cooling procedure and the second cooling procedure, and first cooling procedure exists
The bottom surface of the substrate performs cooling in the state of isolating from the pedestal to upside, second of cooling procedure is then described
First cooling procedure performs cooling in the state of the upper surface of the pedestal is touched later.
10. substrate processing method using same as claimed in claim 7, it is characterised in that further comprising the steps of：
In the 3rd chamber (300) and the 4th chamber (400), after the substrate is heated into the first design temperature,
Maintain setting time,
In the 5th chamber (500) and the 6th chamber (600), the substrate is being heated above the first setting temperature
After second design temperature of degree, setting time is maintained.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0054519 | 2016-05-03 | ||
| KR20160054519 | 2016-05-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107342242A true CN107342242A (en) | 2017-11-10 |
Family
ID=60222185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610618085.9A Pending CN107342242A (en) | 2016-05-03 | 2016-07-29 | Substrate board treatment and substrate processing method using same |
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| Country | Link |
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| CN (1) | CN107342242A (en) |
| TW (1) | TW201740466A (en) |
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| TW201428867A (en) * | 2013-01-08 | 2014-07-16 | Sti Co Ltd | Continuous treatment method of semiconductor wafer |
| CN104040708A (en) * | 2011-11-21 | 2014-09-10 | 高通Mems科技公司 | Processing for electromechanical systems and equipment for same |
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- 2016-07-28 TW TW105123968A patent/TW201740466A/en unknown
- 2016-07-29 CN CN201610618085.9A patent/CN107342242A/en active Pending
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| CN1458666A (en) * | 2002-05-17 | 2003-11-26 | 株式会社半导体能源研究所 | Producing device |
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| CN104040708A (en) * | 2011-11-21 | 2014-09-10 | 高通Mems科技公司 | Processing for electromechanical systems and equipment for same |
| KR101406172B1 (en) * | 2013-01-08 | 2014-06-12 | (주)에스티아이 | Continuous treatment apparatus and method of semiconductor wafer |
| TW201428867A (en) * | 2013-01-08 | 2014-07-16 | Sti Co Ltd | Continuous treatment method of semiconductor wafer |
| CN104919583A (en) * | 2013-01-08 | 2015-09-16 | 系统科技公司 | Apparatus and method for continuous processing of semiconductor wafer |
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