KR20130072413A - Light emitting device package and lighting system including the same - Google Patents

Abstract

PURPOSE: A light emitting device package and a lighting system including the same are provided to easily control a light emission angle by arranging a light emitting device near the sidewall of a cavity in the cavity of a package body. CONSTITUTION: A package body (210) includes a cavity consisting of a bottom surface and a sidewall. A first lead frame (221) and a second lead frame (222) are installed on the package body. A light emitting device (100) is electrically connected to the first lead frame and the second lead frame. The light emitting device includes a light emitting structure (120), a first electrode pad (140), and a second electrode pad (150). The edge of the bottom surface of the cavity is separated from the edge of the light emitting device with a distance of 200 μm or less.

Description

LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME}

Embodiments relate to a light emitting device package and an illumination system including the same.

Light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or 2-6 compound semiconductor materials of semiconductors have various colors such as red, green, blue, and ultraviolet rays due to the development of thin film growth technology and device materials. It is possible to realize efficient white light by using fluorescent materials or combining colors, and it has low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Has an advantage.

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.

The light emitting device emits light having energy determined by an energy band inherent in a material in which electrons injected through the first conductive semiconductor layer and holes injected through the second conductive semiconductor layer meet each other to form an active layer (light emitting layer). do. In the light emitting device package, the phosphor is excited by the light emitted from the light emitting device to emit light having a longer wavelength region than the light emitted from the active layer.

In the light emitting device package, the light emitting device described above may be disposed in the first lead frame and the second lead frame, and current may be supplied from the first lead frame and the second lead frame to the light emitting device to drive the light emitting device.

1 is a view showing an embodiment of a conventional light emitting device package.

The conventional light emitting device package includes a package body 210, a first lead frame 221 and a second lead frame 222 installed on the package body 210, the first lead frame 221 and a second lead. The light emitting device 100 is electrically connected to the frame 222.

In the light emitting device 100, a light emitting structure 120 including a first conductive semiconductor layer 122, an active layer 124, and a second conductive semiconductor layer 126 is disposed on a substrate 110. The first electrode pad 140 on the type semiconductor layer 122 and the second electrode pad 150 on the second conductive semiconductor layer 126 are respectively disposed on the second lead frame 222 and the first lead frame 221. The conductive adhesive layers 145 and 155 are connected to each other.

Conventional light emitting device packages have the following problems.

The light emitting device 100 is fixed to the package body 210 through the conductive adhesive layers 145 and 155. In the mounting process, the light emitting device 100 may not be mounted at the correct position. In addition, since the conductive adhesive layers 145 and 155 may have fluidity before curing, the light emitting device 100 mounted at the correct position may move sideways. Inaccuracy of the mount position may lead to inaccuracy of the light output pattern of the light emitting device package.

The embodiment is intended to adjust the light exit angle by fixing the position of the light emitting device in the light emitting device package.

An embodiment includes a package body having a cavity; A first lead frame and a second lead frame disposed on the bottom surface of the package body; And light emitting devices electrically connected to the first lead frame and the second lead frame, respectively, wherein an edge of the bottom surface of the cavity is spaced apart from the edge of the light emitting device by a distance of 200 micrometers or less. to provide.

The cavity may consist of a bottom surface and sidewalls perpendicular to the bottom surface.

The cavity may be formed of a bottom surface and sidewalls having an inclination by θ (0 <θ ≦ 60) on the bottom surface.

The width of the light emitting structure may be less than or equal to the length of the bottom surface of the cavity.

The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first electrode pad and a second electrode disposed on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. An electrode pad may be included, and the first electrode pad and the second electrode pad may be bonded to the first lead frame and the second lead frame, respectively.

The first electrode pad and the second electrode pad may be bonded to the first lead frame and the second lead frame with a conductive adhesive layer.

At least one of the first lead frame and the second lead frame may be connected to the bottom surface of the package body through the package body.

The light emitting device package may further include a heat dissipation layer disposed between the first lead frame and the second lead frame in the package body.

The heat dissipation layer may be disposed with the package body interposed between the first lead frame and the second lead frame, and the package body may be insulating.

The light emitting device package may further include an insulating layer disposed between the first lead frame and the second lead frame on the bottom surface of the package body.

The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and includes an upper end of the cavity from the bottom surface of the cavity than the height from the bottom surface of the cavity to the active layer. The height to can be greater.

A portion of the package body may protrude from the circumference of the light emitting device to form a protrusion, and the cavity may be formed inside the protrusion.

The length of the package body may be longer than the length of the protrusion.

The side of the package body may be stepped with the protrusion.

Another embodiment provides an illumination system including the light emitting device package described above.

In the light emitting device package according to the embodiment, since the sidewall of the package body is adjacent to the light emitting device and the position of the light emitting device is fixed, the light emission angle can be easily adjusted.

1 is a view showing an embodiment of a conventional light emitting device package,
2 to 6 are views showing a first embodiment and a fifth embodiment of a light emitting device package,
7 is a view showing an embodiment of a light emitting device package array;
8 is a view showing an embodiment of a lighting device including a light emitting device package,
9 is a diagram illustrating an embodiment of an image display device including a light emitting device package.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the (up) or down (on) or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

2 is a view showing a first embodiment of a light emitting device package.

The light emitting device package according to the embodiment includes a package body 210 having a cavity, a first lead frame 221 and a second lead frame 222 installed on the package body 210, and the first lead. The light emitting device 100 is electrically connected to the frame 221 and the second lead frame 222.

The package body 210 may be made of an insulating material. The cavity formed in the package body 210 may be formed of a bottom surface and sidewalls perpendicular to the bottom surface, and the bottom surface is an area where the light emitting device 100 is to be disposed. The side walls may reflect light emitted from the light emitting device 100 and may function to fix the light emitting device 100 without moving to the side.

The first lead frame 221 and the second lead frame 222 extend from the outer wall of the package body 210 to the side wall and the bottom surface of the cavity, and are separated from each other at the bottom surface of the cavity. The insulating layer 170 is disposed in an area in which the first lead frame 221 and the second lead frame 222 are separated from each other, thereby preventing an electrical short between the first lead frame 221 and the second lead frame 222. can do.

Although not shown, the resin layer and the phosphor are disposed to surround the light emitting device 100 to protect the light emitting device 100 and change the wavelength of the light emitted from the light emitting device into light of a long wavelength region. .

In the light emitting device 100, a light emitting structure 120 including a first conductive semiconductor layer 122, an active layer 124, and a second conductive semiconductor layer 126 is disposed on a substrate 110. The first electrode pad 140 and the second electrode pad 150 may be disposed on the type semiconductor layer 122 and the second conductive semiconductor layer 126, respectively.

The substrate 110 includes a conductive substrate or an insulating substrate, for example, at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ 0 ₃ . Can be used.

Although not shown, a buffer layer may be disposed between the substrate 110 and the light emitting structure 120 to mitigate the difference in lattice mismatch and thermal expansion coefficient of the material between the substrate 110 and the light emitting structure 120. The material of the buffer layer may be formed of at least one of Group III-V compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.

The light emitting structure 120 includes a first conductive semiconductor layer 122, an active layer 124, and a second conductive semiconductor layer 126. A portion of the first conductive semiconductor layer 122 is mesa-etched. Since the electrode pad cannot be formed under the insulating substrate like the sapphire substrate, the first electrode pad 145 is disposed in the above-described etched region. Can be placed.

The first conductivity type semiconductor layer 122 may be implemented as a group III-V compound semiconductor doped with a first conductivity type dopant, and when the first conductivity type semiconductor layer 122 is an N-type semiconductor layer, The first conductive dopant may be an N-type dopant and may include Si, Ge, Sn, Se, or Te, but is not limited thereto.

The first conductivity-type semiconductor layer 122 includes a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). can do. The first conductive semiconductor layer 122 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.

The active layer 124 has an energy inherent to a material in which electrons injected through the first conductive semiconductor layer 122 and holes injected through the second conductive semiconductor layer 126 formed thereafter meet each other to form the active layer 124. It is a layer that emits light with energy determined by the band.

The active layer 124 may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. For example, the active layer 120 may be injected with trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited to this.

The well layer / barrier layer of the active layer 124 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP But are not limited thereto. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

A conductive clad layer (not shown) may be formed on and / or below the active layer 124. The conductive clad layer may be formed of an AlGaN-based semiconductor, and may have a higher band gap than the band gap of the active layer 124.

The second conductive semiconductor layer 126 is disposed on the active layer 124. A second conductive semiconductor layer 126 is a second conductive type dopant is doped III-V compound semiconductor, for example _{-5, In x Al y Ga 1 -x-} y N (0≤x≤1, 0≤y≤1 , 0 ≦ x + y ≦ 1). When the second conductive semiconductor layer 126 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, Ba, and the like as a P-type dopant.

Unevenness is formed on the surface of the second conductivity-type semiconductor layer 126 to improve light extraction efficiency on the surface of the light emitting structure 120. Although not shown, a transmissive conductive layer may be disposed on the second conductive semiconductor layer 126 to improve contact characteristics between the second conductive semiconductor layer 126 and the first electrode pad 145.

The first and second electrode pads 140 and 150 may include at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). It may be formed into a structure.

In the light emitting device 100, the substrate 110 faces upward and the light emitting structure 120 faces the package body 210, so that the first electrode pad 140 and the second electrode pad 150 have a first lead frame 221. ) And a flip chip structure in direct contact with the second lead frame 222.

The first electrode pad 140 and the second electrode pad 150 are fixed to the second lead frame 222 and the first lead frame 221 through conductive adhesive layers 145 and 155.

In the present embodiment, the side surface of the light emitting structure 120 is spaced apart from the side wall of the cavity by a predetermined distance (d ₁ , d ₂ ), the predetermined distance (d ₁ , d ₂ ) is 10 micrometer (μm) to 200 micrometers Can be. If the distances d ₁ and d ₂ are too large, they may move in the cavity when the light emitting devices 100 are mounted. If the distances d ₁ and d ₂ are too small, the light emitting devices 100 may be removed. The first lead frame 221 or the second lead frame 222 may be in contact with the electricity.

Then, there the height (h ₂₎ than the height (h ₁₎ to the top of the cavity from the bottom surface of the cavity to the active layer 124 from the bottom surface of the cavity can be higher, the light emitted from the active layer 124 packages This is to adjust the light exit angle of the light emitting device package after the reflection proceeds from the bottom surface and the side wall of the cavity without going straight to the left and right sides of the.

3 is a view showing a second embodiment of a light emitting device package.

The light emitting device package according to the present embodiment has a structure different from that of FIG. 2. That is, the cavity is formed of a bottom surface and sidewalls inclined to the bottom surface, and the angle θ between the bottom surface and the sidewalls may be greater than 0 degrees and less than 60 degrees. If the angle θ between the bottom surface and the sidewall is too large, the light output angle of the light emitting device package may be too large.

In this embodiment, the side of the light emitting structure 120 is spaced apart from the side wall of the cavity by a predetermined distance (d ₃ , d ₄ ), the predetermined distance (d ₃ , d ₄ ) is 10 micrometers (㎛) to 200 micrometers Can be. If the distance d ₃ , d ₄ is too large, the light emitting device 100 may move in the cavity when the light emitting device 100 is mounted. If the distance d ₃ , d ₄ is too small, the light emitting device 100 may be in the cavity. The first lead frame 221 or the second lead frame 222 disposed on the sidewall of the contact may be energized.

The above-described distances d ₃ and d ₄ are the shortest distances between the light emitting structure 120 and the side walls of the cavity, and in FIG. 3, the side surfaces of the light emitting structure 120 have boundary points a and b between the bottom surface of the cavity and the side walls. It is arrange | positioned correspondingly.

The width of the light emitting structure 120 may be less than or equal to the length of the bottom surface of the cavity, that is, the width of the light emitting structure 120 is smaller than the length between 'a' and 'b', the length of the bottom of the cavity. Or may be the same.

In this embodiment, the distance between the side wall of the cavity and the light emitting structure 120 may be relatively closer than the embodiment shown in FIG. 2, in particular, the distance between the side wall adjacent to the bottom surface of the cavity and the light emitting structure 120. May be close.

4A illustrates a third embodiment of a light emitting device package.

This embodiment is similar to the embodiment shown in FIG. 3, but the first lead frame 221 and the second lead frame 222 are disposed in a via hole type in the package body.

The first lead frame 221 is disposed on the lower surface of the package body 210 and the through hole 221b and the cavity penetrating through the package body 210 and the current supply unit 221a to receive current from a circuit board (not shown). The contact portion 221c is exposed to the bottom surface of the contact with the second electrode pad 150. In addition, the second lead frame 222 is also disposed on the bottom surface of the package body 210 to penetrate the current supply unit 222a and the package body 210 to receive current from a circuit board (not shown). And a contact portion 222c exposed to the bottom surface of the cavity and in contact with the first electrode pad 140.

In this embodiment, the first lead frame 221 and the second lead frame 222 pass through the package body 210 and are formed, and the package body 210 should be made of an insulating material. When the package body 210 is a conductive material, an insulating layer (not shown) may be disposed between the first lead frame 221 and the second lead frame 222.

The arrangement of the via hole type lead frame may be applied to the light emitting device package shown in FIG. 2.

4B is a view showing a fourth embodiment of a light emitting device package.

This embodiment is similar to the embodiment of FIG. 4A, but the height of the side wall of the cavity is higher than the height of the light emitting device, that is, the height h ₁ from the bottom surface of the cavity to the top of the cavity is higher than that of the light emitting device. Sidewalls of the cavity may be disposed higher than 110.

5 is a view showing a fifth embodiment of a light emitting device package.

Although the present embodiment is similar to the embodiment shown in FIG. 4, the heat dissipation layer 180 may be disposed between the first lead frame 221 and the second lead frame 222 in the package body 210. The heat dissipation layer 180 may be connected to the bottom surface of the cavity to emit heat emitted from the light emitting device toward the bottom of the package body 210. When the heat dissipation layer 180 is a conductive material, the package body 210 may be disposed separately from the first lead frame 221 and the second lead frame 222, and in the separated region.

6 is a view showing a sixth embodiment of a light emitting device package.

This embodiment is similar to the light emitting device package of FIG. 4, but protrusions 210a and 210b are formed in the package body 210. The protrusions 210a and 210b are formed by projecting the package body 210 around the light emitting device 100, and a cavity is formed inside the protrusions 210a and 210b. The cavity formed in the protrusions 210a and 210b has an acute angle between the bottom surface and the side wall, but may be vertical as shown in FIG. 2. The distance between the side surfaces of the light emitting structure 120 and the side walls of the cavity formed in the protrusions 210a and 210b is denoted by d ₅ and d ₆ . Although the cross-section of the light emitting device package is shown in FIG. 6 and the protrusions 210a and 210b are shown at both sides, the light emitting device package may be connected to one of the light emitting device 100.

6 is a cross-sectional view of a sixth embodiment of a light emitting device package, the length of the package body 210 is formed longer than the length of the protrusions (210a, 210b), the package body 210 is stepped with the protrusions (210a, 210b) It can be formed to form. Here, the lengths of the protrusions 210a and 210b are the distances from the left end of the protrusion 210a to the right end of the protrusion 210b in FIG. 6.

7 is a diagram illustrating an embodiment of a light emitting device package array.

In the present embodiment, two cavities are disposed in the package body 210, and the light emitting device 100 is disposed in each cavity. The arrangement and shape of the cavity of each light emitting device 100 are as described with reference to FIG. 2, and the arrangement of the lead frame is the same as the embodiment shown in FIG. 4. In the present embodiment, three or more cavities may be formed in the package body 210, and the shape of each cavity may be the same as the embodiment of FIG. 3 or FIG. 6, and the arrangement of the lead frame is other than the via hole type. 2 and the like.

In the light emitting device packages according to the above-described embodiments, the light emitting device is disposed in the cavity of the package body adjacent to the side wall of the cavity, so that the light emitting device can be easily fixed in the mounting process of the light emitting device, and thus the light exit angle of the light emitting device package can be achieved. Easy to adjust

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, and for example, the lighting system may include a lamp or a street lamp. . Hereinafter, a head lamp and a backlight unit will be described as an embodiment of an illumination system in which the above-described light emitting device package is disposed.

8 is a diagram illustrating an embodiment of a lighting apparatus in which a light emitting device package is disposed.

The lighting apparatus according to the embodiment includes a light source 600 for projecting light, a housing 400 in which the light source 600 is embedded, a heat dissipation part 500 for dissipating heat from the light source 600, and the light source 600. And a holder 700 for coupling the heat dissipation part 500 to the housing 400.

The housing 400 includes a socket coupling part 410 coupled to an electric socket and a body part 420 connected to the socket coupling part 410 and having a light source 600 embedded therein. The body 420 may have one air flow hole 430 formed therethrough.

A plurality of air flow openings 430 are provided on the body portion 420 of the housing 400. The air flow openings 430 may be formed of one air flow openings or a plurality of flow openings may be radially arranged Various other arrangements are also possible.

The light source 600 includes a plurality of light emitting device packages 650 on the circuit board 610. The light emitting device package 650 is according to the above-described embodiment, and since the light emitting device is disposed adjacent to the side wall of the cavity in the cavity of the package body, the light emitting device is easily fixed in the mounting process of the light emitting device, and thus the light emitting device package It is easy to adjust the light exit angle. Here, the circuit board 610 may have a shape that can be inserted into the opening of the housing 400.

A holder 700 is provided below the light source, and the holder 700 may include a frame and another air flow port. In addition, although not shown, an optical member may be provided under the light source 100 to diffuse, scatter, or converge light projected from the light emitting device package 150 of the light source 100.

9 is a diagram illustrating an embodiment of an image display device including a light emitting device package.

As shown, the image display apparatus 800 according to the present exemplary embodiment includes a light source module, a reflector 820 on the bottom cover 810, and light disposed in front of the reflector 820 and emitted from the light source module. The light guide plate 840 to guide the front of the image display device, the first prism sheet 850 and the second prism sheet 860 disposed in front of the light guide plate 840, and the second prism sheet 860. And a color filter 880 disposed in front of the panel 870 disposed in front of the panel 870.

The light source module includes a light emitting device package 835 on the circuit board 830. Here, the PCB 830 may be used as the circuit board 830, and the light emitting device package 835 is as described with reference to FIG. 1.

The bottom cover 810 may receive components in the image display device 800. The reflecting plate 820 may be provided as a separate component as shown in the figure, or may be provided in the form of a high reflective material on the rear surface of the light guide plate 840 or the front surface of the bottom cover 810.

The reflective plate 820 may use a material having high reflectance and being extremely thin, and may use polyethylene terephthalate (PET).

The light guide plate 840 scatters light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the LCD. Accordingly, the light guide plate 830 is made of a material having a good refractive index and transmittance. The light guide plate 830 may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), or polyethylene (PE). In addition, when the light guide plate 840 is omitted, an air guide type display device may be implemented.

The first prism sheet 850 is formed of a translucent and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In the second prism sheet 860, the direction of the floor and the valley of one surface of the support film may be perpendicular to the direction of the floor and the valley of one surface of the support film in the first prism sheet 850. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 870.

In the present embodiment, the first prism sheet 850 and the second prism sheet 860 form an optical sheet, which is composed of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Or a combination of one prism sheet and a micro lens array.

The liquid crystal display panel (Liquid Crystal Display) may be disposed on the panel 870, in addition to the liquid crystal display panel 860 may be provided with other types of display devices that require a light source.

The panel 870 is a state in which the liquid crystal is located between the glass body and the polarizing plate is placed on both glass bodies in order to use the polarization of light. Here, the liquid crystal has an intermediate property between a liquid and a solid, and liquid crystals, which are organic molecules having fluidity like a liquid, are regularly arranged like crystals. The liquid crystal has a structure in which the molecular arrangement is changed by an external electric field And displays an image.

A liquid crystal display panel used in a display device is an active matrix type, and a transistor is used as a switch for controlling a voltage supplied to each pixel.

The front surface of the panel 870 is provided with a color filter 880 to transmit the light projected from the panel 870, only the red, green and blue light for each pixel can represent an image.

In the light emitting device package disposed in the image display device according to the present exemplary embodiment, since the light emitting device is disposed adjacent to the sidewall of the cavity in the cavity of the package body, the light emitting device may be easily fixed in the mounting process of the light emitting device. It is easy to adjust the light exit angle.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: light emitting device 110: substrate
115: buffer layer 120: light emitting structure
122 and 126: first and second conductivity type semiconductor layers 124: active layer
130: transparent conductive layer 140, 150: first and second electrode pads
145 and 155: conductive adhesive layer 170: insulating layer
180: heat radiation layer 210: package body
210a and 210b: protrusions 211 and 222: first and second lead frames
221a, 222a: current supply part 221b, 222b: through part
221c, 222c: connection part 400: headlamp
410: light emitting device module 420: reflector
430: Shade 440: Lens
800: display device 810: bottom cover
820: reflector 830: circuit board module
840: Light guide plate 850, 860: First and second prism sheet
870 panel 880 color filter

Claims (15)

A package body having a cavity;
A first lead frame and a second lead frame disposed on the bottom surface of the package body; And
A light emitting device electrically connected to the first lead frame and the second lead frame, respectively;
The edge of the bottom surface of the cavity is a light emitting device package spaced apart from the edge of the light emitting device by a distance of less than 10 micrometers to 200 micrometers. The method according to claim 1,
The cavity is a light emitting device package consisting of a bottom surface and a side wall perpendicular to the bottom surface. The method according to claim 1,
The cavity is a light emitting device package consisting of a bottom surface and sidewalls inclined by θ to the bottom surface. Where 0 <θ≤60 The method of claim 3,
The light emitting device package width of the light emitting structure is less than or equal to the length of the bottom surface of the cavity. The method according to claim 1,
The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first electrode pad and a first electrode pad disposed on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. And a second electrode pad, wherein the first electrode pad and the second electrode pad are bonded to the first lead frame and the second lead frame, respectively. 6. The method of claim 5,
The first electrode pad and the second electrode pad, the light emitting device package is bonded to the first lead frame and the second lead frame by a conductive adhesive layer. The method according to claim 1,
At least one of the first lead frame and the second lead frame is a light emitting device package is connected to the bottom surface of the package body through the package body. The method of claim 7, wherein
And a heat dissipation layer disposed between the first lead frame and the second lead frame in the package body. The method of claim 8,
The heat dissipation layer is disposed with the package body between the first lead frame and the second lead frame, respectively, the package body is an insulating light emitting device package. The method according to claim 1,
The light emitting device package further comprises an insulating layer disposed between the first lead frame and the second lead frame on the bottom surface of the package body. The method according to claim 1,
The light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein the light emitting element has a height of less than the height from the bottom surface of the cavity to the active layer. Larger light emitting device package to the top. The method according to claim 1,
A portion of the package body protrudes from the periphery of the light emitting device to form a protrusion, wherein the cavity is formed in the cavity of the protrusion. The method of claim 12,
The length of the package body is a light emitting device package longer than the length of the protrusion. The method of claim 12,
The side of the package body is a light emitting device package forming a step with the protrusion. An illumination system comprising the light emitting device package of any one of claims 1 to 14.

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