KR20130042017A - Adhesive composition, connection structure, and method for producing connection structure - Google Patents

Adhesive composition, connection structure, and method for producing connection structure Download PDF

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Publication number
KR20130042017A
KR20130042017A KR1020137006450A KR20137006450A KR20130042017A KR 20130042017 A KR20130042017 A KR 20130042017A KR 1020137006450 A KR1020137006450 A KR 1020137006450A KR 20137006450 A KR20137006450 A KR 20137006450A KR 20130042017 A KR20130042017 A KR 20130042017A
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South Korea
Prior art keywords
circuit member
adhesive composition
group
connection terminal
acrylate
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KR1020137006450A
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Korean (ko)
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히로유끼 이자와
시게끼 가또기
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히타치가세이가부시끼가이샤
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Publication of KR20130042017A publication Critical patent/KR20130042017A/en

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Abstract

본 발명은 주면 상에 제1 접속 단자를 갖는 제1 회로 부재와, 주면 상에 제2 접속 단자를 갖는 제2 회로 부재를 접속하기 위한 접착제 조성물로서, 제1 회로 부재 및/또는 제2 회로 부재는, 유리 전이 온도가 200℃ 이하인 열 가소성 수지를 포함하는 기재로 구성되고, 접착제 조성물은 (a) 열 가소성 수지, (b) 라디칼 중합성 화합물 및 (c) 라디칼 중합 개시제를 함유하며, (b) 라디칼 중합성 화합물이 25 내지 40 mN/m의 임계 표면 장력을 갖는 우레탄(메트)아크릴레이트를 포함하는 접착제 조성물에 관한 것이다.This invention is an adhesive composition for connecting the 1st circuit member which has a 1st connection terminal on a main surface, and the 2nd circuit member which has a 2nd connection terminal on a main surface, Comprising: A 1st circuit member and / or a 2nd circuit member Is composed of a substrate containing a thermoplastic resin having a glass transition temperature of 200 ° C. or lower, the adhesive composition contains (a) a thermoplastic resin, (b) a radical polymerizable compound and (c) a radical polymerization initiator, and (b A radically polymerizable compound relates to an adhesive composition comprising urethane (meth) acrylate having a critical surface tension of 25 to 40 mN / m.

Description

접착제 조성물, 접속 구조체, 및 접속 구조체의 제조 방법{ADHESIVE COMPOSITION, CONNECTION STRUCTURE, AND METHOD FOR PRODUCING CONNECTION STRUCTURE}Adhesive composition, bonded structure, and manufacturing method of bonded structure {ADHESIVE COMPOSITION, CONNECTION STRUCTURE, AND METHOD FOR PRODUCING CONNECTION STRUCTURE}

본 실시 형태는 접착제 조성물, 접속 구조체, 접속 구조체의 제조 방법 및 접착제 조성물의 용도에 관한 것이다. This embodiment relates to the adhesive composition, the bonded structure, the manufacturing method of the bonded structure, and the use of an adhesive composition.

반도체 소자 및 액정 표시 소자에 있어서, 소자 중의 여러가지 부재를 결합시킬 목적으로 종래부터 다양한 접착제가 사용되고 있다. 접착제에 대한 요구는 접착성을 비롯하여, 내열성, 고온 고습 상태에서의 신뢰성 등 다방면에 걸친다. 또한, 접착에 사용되는 피착체는 인쇄 배선판이나 폴리이미드, 폴리에틸렌테레프탈레이트(PET), 폴리카보네이트(PC), 폴리에틸렌나프탈레이트(PEN) 등의 유기 기재를 비롯하여, 구리, 알루미늄 등의 금속이나 ITO(인듐과 주석의 복합 산화물), SiN, SiO2 등의 다종다양한 표면 상태를 갖는 기재가 이용되어, 각 피착체에 맞춘 분자 설계가 필요하다. BACKGROUND OF THE INVENTION In a semiconductor device and a liquid crystal display device, various adhesives have been conventionally used for the purpose of bonding various members in the device. The demand for an adhesive is multifaceted including adhesiveness, heat resistance, reliability under high temperature and high humidity. In addition, the adherend used for adhesion includes organic substrates such as printed wiring boards, polyimide, polyethylene terephthalate (PET), polycarbonate (PC), polyethylene naphthalate (PEN), metals such as copper and aluminum, and ITO ( A substrate having various surface states such as indium and tin oxide), SiN, and SiO 2 is used, and a molecular design suitable for each adherend is required.

종래부터, 상기 반도체 소자나 액정 표시 소자용의 접착제로서는, 고접착성이고 또한 고신뢰성을 나타내는 에폭시 수지를 이용한 열경화성 수지가 이용되어 왔다(예를 들면, 특허문헌 1 참조). 수지의 구성 성분으로서는 에폭시 수지, 에폭시 수지와 반응성을 갖는 페놀 수지 등의 경화제, 에폭시 수지와 경화제의 반응을 촉진하는 열 잠재성 촉매가 일반적으로 이용되고 있다. 열 잠재성 촉매는, 실온 등의 저장 온도에서는 반응하지 않고 가열시에 높은 반응성을 나타내는 물질로서, 경화 온도 및 경화 속도를 결정하는 중요한 인자가 되어, 접착제의 실온에서의 저장 안정성과 가열시의 경화 속도의 관점에서 다양한 화합물이 이용되어 왔다. 실제의 공정에서의 경화 조건은 170 내지 250℃의 온도에서 1 내지 3시간 경화함으로써 원하는 접착을 얻고 있었다. Conventionally, as an adhesive agent for the said semiconductor element and a liquid crystal display element, the thermosetting resin using the epoxy resin which is high adhesiveness and shows high reliability has been used (for example, refer patent document 1). As the component of the resin, a curing agent such as an epoxy resin, a phenol resin having reactivity with the epoxy resin, and a thermal latent catalyst for promoting the reaction between the epoxy resin and the curing agent are generally used. The thermal latent catalyst is a substance that does not react at a storage temperature such as room temperature and exhibits high reactivity at the time of heating, and is an important factor for determining the curing temperature and curing rate, and the storage stability of the adhesive at room temperature and curing at heating. Various compounds have been used in terms of speed. The hardening conditions in the actual process obtained the desired adhesive by hardening for 1 to 3 hours at the temperature of 170-250 degreeC.

그러나, 최근 들어, PET, PC, PEN 등의 내열성이 낮은 유기 기재 상에 반도체 소자나 액정 표시 소자 및 배선이 형성되는 경우가 있는데, 경화시의 가열에 의해서 유기 기재 및 주변 부재에 악영향을 미칠 우려가 있기 때문에, 보다 저온 경화에서의 접착이 요구되고 있다. 상술한 에폭시 수지 등으로 저온 속경화를 달성하기 위해서는, 활성화 에너지가 낮은 열 잠재성 촉매를 사용할 필요가 있지만, 실온 부근에서의 저장 안정성을 겸비하는 것은 곤란하였다. However, in recent years, semiconductor elements, liquid crystal display elements, and wirings are sometimes formed on organic substrates having low heat resistance, such as PET, PC, and PEN, which may adversely affect the organic substrate and the peripheral member by heating during curing. Since there exists, adhesion in low temperature hardening is calculated | required. In order to achieve low temperature fast curing with the above-mentioned epoxy resin, it is necessary to use a thermal latent catalyst having a low activation energy, but it is difficult to have a storage stability near room temperature.

이러한 중에, 아크릴레이트 유도체나 메타아크릴레이트 유도체 등의 라디칼 중합성 화합물과 라디칼 중합 개시제인 과산화물을 병용한 라디칼 경화형 접착제가 주목받고 있다. 라디칼 경화는 반응 활성종인 라디칼이 반응성이 풍부하기 때문에 단시간 경화가 가능하다(예를 들면, 특허문헌 2 참조). 그러나, 라디칼 경화계의 접착제는 가열시의 경화 수축이 크기 때문에, 에폭시 수지를 이용한 경우와 비교하여 접착 강도가 떨어진다. 이러한 접착 강도의 저하에 대해서는, 우레탄아크릴레이트를 적용함으로써 가요성을 부여하여 접착 강도를 개선시키는 방법이 제안되어 있다(예를 들면, 특허문헌 3 참조). 또한, 피착체가 ITO, SiN, SiO2 등인 무기 기재에 대해서는, 실란 커플링제 등의 접착 보조제를 가함으로써 접착 강도를 개선하는 방법이 제안되어 있다(예를 들면, 특허문헌 4 참조). Among these, attention is paid to radical curable adhesives which use together radical polymerizable compounds, such as an acrylate derivative and a methacrylate derivative, and a peroxide which is a radical polymerization initiator. Radical hardening can be hardened for a short time because the radical which is reactive active species is rich in reactivity (for example, refer patent document 2). However, since the radical shrinkage-type adhesive agent has large hardening shrinkage at the time of heating, adhesive strength is inferior compared with the case where an epoxy resin is used. About the fall of such adhesive strength, the method of providing flexibility and improving adhesive strength by applying urethane acrylate is proposed (for example, refer patent document 3). Further, for the body is deposited ITO, SiN, SiO 2 or the like inorganic base material, a method for improving the bonding strength by adding an adhesion aid such as a silane coupling agent has been proposed (for example, see Patent Document 4).

일본 특허 공개 (평)1-113480호 공보Japanese Patent Laid-Open No. 1-13480 국제 공개 제98/44067호 공보International Publication No. 98/44067 일본 특허 제3503740호 공보Japanese Patent No. 3503740 일본 특허 공개 (소)62-62874호 공보Japanese Patent Laid-Open No. 62-62874

그러나, 열 가소성 수지인 PET, PC, PEN 등의 유기 기재는 직쇄상이고, 또한 벤젠환에 의한 분자간의 상호 작용에 의해서 결정 부분을 형성하기 쉽기 때문에, 접착제 조성물이나 실란 커플링제와의 공유결합의 형성은 매우 곤란하다. 그 때문에, 상술한 특허문헌 4에 기재된 방법에서는, 충분한 접착 강도가 얻어지지 않는다. 또한, PET, PC, PEN 등의 표면은 평활하기 때문에, 물리적인 투묘 효과(앵커 효과)에 의한 접착 효과가 작다. 그 때문에, 피착체에 대한 습윤성이나 충분한 가요성이 얻어지는 접착제 조성물을 적용할 필요가 있지만, 상술한 특허문헌 3에 기재된 방법에서는, 피착체에 대한 충분한 습윤성이나 가요성이 얻어지지 않는다.However, organic substrates such as thermoplastic resins, such as PET, PC, and PEN, are linear and easily form crystal parts due to intermolecular interactions with a benzene ring. Therefore, covalent bonds with adhesive compositions or silane coupling agents Formation is very difficult. Therefore, in the method of patent document 4 mentioned above, sufficient adhesive strength is not obtained. In addition, since the surfaces of PET, PC, PEN and the like are smooth, the adhesion effect due to the physical anchoring effect (anchor effect) is small. Therefore, although it is necessary to apply the adhesive composition which obtains wettability and sufficient flexibility with respect to a to-be-adhered body, in the method of patent document 3 mentioned above, sufficient wettability and flexibility with respect to a to-be-adhered body are not acquired.

따라서, 본 발명은 폴리에틸렌테레프탈레이트, 폴리카보네이트, 폴리에틸렌나프탈레이트 등의 유기 기재에 대하여 저온의 경화 조건에서도 우수한 접착 강도를 얻을 수 있고, 장시간의 신뢰성 시험(고온 고습 시험) 후에 있어서도 안정된 성능(접착 강도나 접속 저항)을 유지할 수 있는 접착제 조성물, 그것을 이용한 회로 부재의 접속 구조체, 접속 구조체의 제조 방법 및 접착제 조성물의 용도를 제공하는 것을 목적으로 한다. Therefore, this invention can obtain the outstanding adhesive strength with respect to organic base materials, such as polyethylene terephthalate, a polycarbonate, and a polyethylene naphthalate, even in low-temperature hardening conditions, and is stable even after a long time reliability test (high temperature, high humidity test) (adhesive strength) And (b) connection resistance), the connection structure of a circuit member using the same, the manufacturing method of a connection structure, and the use of an adhesive composition are provided.

상기 목적을 달성하기 위해서, 본 발명은 주면 상에 제1 접속 단자를 갖는 제1 회로 부재와, 주면 상에 제2 접속 단자를 갖는 제2 회로 부재를 접속하기 위한 접착제 조성물로서, 제1 회로 부재 및/또는 제2 회로 부재는, 유리 전이 온도가 200℃ 이하인 열 가소성 수지를 포함하는 기재로 구성되고, 접착제 조성물은 (a) 열 가소성 수지, (b) 라디칼 중합성 화합물 및 (c) 라디칼 중합 개시제를 함유하며, (b) 라디칼 중합성 화합물이 25 내지 40 mN/m의 임계 표면 장력을 갖는 우레탄(메트)아크릴레이트를 포함하는 접착제 조성물을 제공한다. In order to achieve the said objective, this invention is an adhesive composition for connecting the 1st circuit member which has a 1st connection terminal on a main surface, and the 2nd circuit member which has a 2nd connection terminal on a main surface, Comprising: 1st circuit member And / or the second circuit member is composed of a substrate comprising a thermoplastic resin having a glass transition temperature of 200 ° C. or less, and the adhesive composition comprises (a) a thermoplastic resin, (b) a radical polymerizable compound, and (c) radical polymerization. An adhesive composition is provided which comprises an urethane (meth) acrylate containing an initiator and (b) the radically polymerizable compound having a critical surface tension of 25 to 40 mN / m.

상기 접착제 조성물은 25 내지 40 mN/m의 임계 표면 장력을 갖는 우레탄(메트)아크릴레이트를 포함하는 (b) 라디칼 중합성 화합물을 함유함으로써, Tg가 200℃ 이하인 열 가소성 수지를 포함하는 기재(예를 들면 PET, PC, PEN 등)와의 습윤성이 향상하여, 저온 경화에서의 접착이 가능해져, 회로 부재 사이의 접착 강도를 향상시킬 수 있다. 또한, 장시간의 신뢰성 시험 후에도 안정된 성능을 유지할 수 있다. The adhesive composition contains a (b) radically polymerizable compound comprising a urethane (meth) acrylate having a critical surface tension of 25 to 40 mN / m, thereby providing a substrate containing a thermoplastic resin having a Tg of 200 ° C. or less (eg, For example, wettability with PET, PC, PEN, etc.) is improved, adhesion at low temperature curing is enabled, and adhesive strength between circuit members can be improved. In addition, stable performance can be maintained even after a long-term reliability test.

또한, 본 발명의 접착제 조성물에 있어서, (b) 라디칼 중합성 화합물에 포함되는 우레탄(메트)아크릴레이트는 하기 화학식 (A)로 표시되는 것인 것이 바람직하다. Moreover, in the adhesive composition of this invention, it is preferable that the urethane (meth) acrylate contained in (b) radically polymerizable compound is represented by following General formula (A).

Figure pat00001
Figure pat00001

[화학식 (A) 중, R1 및 R2는 각각 독립적으로 수소 원자 또는 메틸기를 나타내고, R3은 에틸렌기, 프로필렌기, ε-카프로락톤의 개환 화합물로부터 유도되는 기, 또는 하기 화학식 (B)로 표시되는 기를 나타내고, R4는 하기 화학식 (B)로 표시되는 기를 나타내고, R5는 포화 지방족기 또는 포화 지환식기를 나타내고, a는 1 내지 40의 정수를 나타냄][In Formula (A), R <1> and R <2> represents a hydrogen atom or a methyl group each independently, R <3> is group derived from the ring-opening compound of ethylene group, a propylene group, (epsilon) -caprolactone, or following formula (B) Represents a group represented by R 4 represents a group represented by the following formula (B), R 5 represents a saturated aliphatic group or a saturated alicyclic group, and a represents an integer of 1 to 40.]

Figure pat00002
Figure pat00002

[화학식 (B) 중, R6 및 R7은 각각 독립적으로 탄소수 2 내지 12의 직쇄 또는 분지쇄의 알킬렌기를 나타내고, b는 1 내지 10의 정수를 나타내고, c는 1 내지 25의 정수를 나타내며, 식 중, R6끼리, R7끼리, b끼리 및 c끼리는 각각 동일하거나 상이할 수도 있음][In formula (B), R <6> and R <7> respectively independently represents the C2-C12 linear or branched alkylene group, b represents the integer of 1-10, c represents the integer of 1-25. , Wherein, R 6 , R 7 , b and c may be the same or different.

임계 표면 장력과 응집 에너지 밀도의 사이에는 비례 관계가 있기 때문에, 응집 에너지 밀도가 높은 관능기를 도입함으로써 임계 표면 장력이 향상된다고 생각된다. 그 때문에, (b) 라디칼 중합성 화합물에 포함되는 우레탄(메트)아크릴레이트가 상기 화학식 (A)로 표시되는 구조인 것에 의해 응집 에너지 밀도가 향상하고, 접착제 조성물과 Tg가 200℃ 이하인 열 가소성 수지를 포함하는 기재(예를 들면 PET, PC, PEN 등)와의 습윤성이 향상하고, PET나 PC, PEN 등의 열 가소성 수지를 포함하는 기재로 구성되는 회로 부재 사이의 접착 강도가 향상하여, 우수한 접속 신뢰성을 얻을 수 있다. 또한, (b) 라디칼 중합성 화합물에 포함되는 우레탄(메트)아크릴레이트가 상기 화학식 (A)로 표시되는 구조인 것에 의해 접착제 조성물에 적절한 가요성이 부여되고, PET나 PC, PEN 등의 열 가소성 수지를 포함하는 기재로 구성되는 회로 부재 사이의 접착 강도가 향상하여, 우수한 접속 신뢰성을 얻을 수 있다. Since there is a proportional relationship between the critical surface tension and the aggregation energy density, it is considered that the critical surface tension is improved by introducing a functional group having a high aggregation energy density. Therefore, when (b) the urethane (meth) acrylate contained in a radically polymerizable compound is a structure represented by the said General formula (A), aggregation energy density improves and a thermoplastic resin whose adhesive composition and Tg are 200 degrees C or less. The wettability with the base material (for example, PET, PC, PEN, etc.) containing this improves, the adhesive strength between the circuit members comprised from the base material containing thermoplastic resins, such as PET, PC, and PEN, improves, and is excellent connection Reliability can be obtained. Moreover, when the urethane (meth) acrylate contained in the (b) radically polymerizable compound is a structure represented by the said general formula (A), appropriate flexibility is provided to adhesive composition, and thermoplastics, such as PET, PC, and PEN, are provided. The adhesive strength between the circuit members comprised of the base material containing resin improves, and the outstanding connection reliability can be obtained.

또한, 본 발명은 주면 상에 제1 접속 단자를 갖는 제1 회로 부재와, 주면 상에 제2 접속 단자를 갖는 제2 회로 부재를 접속하기 위한 접착제 조성물로서, 제1 회로 부재 및/또는 제2 회로 부재는, 유리 전이 온도가 200℃ 이하인 열 가소성 수지를 포함하는 기재로 구성되고, 접착제 조성물은 (a) 열 가소성 수지, (b) 라디칼 중합성 화합물 및 (c) 라디칼 중합 개시제를 함유하며, (b) 라디칼 중합성 화합물이 하기 화학식 (A)로 표시되는 우레탄(메트)아크릴레이트를 포함하는 접착제 조성물을 제공한다. Moreover, this invention is an adhesive composition for connecting the 1st circuit member which has a 1st connection terminal on a main surface, and the 2nd circuit member which has a 2nd connection terminal on a main surface, Comprising: 1st circuit member and / or 2nd The circuit member is composed of a substrate containing a thermoplastic resin having a glass transition temperature of 200 ° C. or lower, the adhesive composition contains (a) a thermoplastic resin, (b) a radical polymerizable compound and (c) a radical polymerization initiator, (b) It provides the adhesive composition in which a radically polymerizable compound contains urethane (meth) acrylate represented by following General formula (A).

Figure pat00003
Figure pat00003

[화학식 (A) 중, R1 및 R2는 각각 독립적으로 수소 원자 또는 메틸기를 나타내고, R3은 에틸렌기, 프로필렌기, ε-카프로락톤의 개환 화합물로부터 유도되는 기, 또는 하기 화학식 (B)로 표시되는 기를 나타내고, R4는 하기 화학식 (B)로 표시되는 기를 나타내고, R5는 포화 지방족기 또는 포화 지환식기를 나타내고, a는 1 내지 40의 정수를 나타냄][In Formula (A), R <1> and R <2> represents a hydrogen atom or a methyl group each independently, R <3> is group derived from the ring-opening compound of ethylene group, a propylene group, (epsilon) -caprolactone, or following formula (B) Represents a group represented by R 4 represents a group represented by the following formula (B), R 5 represents a saturated aliphatic group or a saturated alicyclic group, and a represents an integer of 1 to 40.]

Figure pat00004
Figure pat00004

[화학식 (B) 중, R6 및 R7은 각각 독립적으로 탄소수 2 내지 12의 직쇄 또는 분지쇄의 알킬렌기를 나타내고, b는 1 내지 10의 정수를 나타내고, c는 1 내지 25의 정수를 나타내며, 식 중, R6끼리, R7끼리, b끼리 및 c끼리는 각각 동일하거나 상이할 수도 있음][In formula (B), R <6> and R <7> respectively independently represents the C2-C12 linear or branched alkylene group, b represents the integer of 1-10, c represents the integer of 1-25. , Wherein, R 6 , R 7 , b and c may be the same or different.

본 접착제 조성물은 (b) 라디칼 중합성 화합물에 포함되는 우레탄(메트)아크릴레이트가 상기 화학식 (A)로 표시되는 구조인 것에 의해 응집 에너지 밀도가 향상하고, 접착제 조성물과 Tg가 200℃ 이하인 열 가소성 수지를 포함하는 기재(예를 들면 PET, PC, PEN 등)와의 습윤성이 향상하고, PET나 PC, PEN 등의 열 가소성 수지를 포함하는 기재로 구성되는 회로 부재 사이의 접착 강도가 향상하여, 우수한 접속 신뢰성을 얻을 수 있다. 또한, (b) 라디칼 중합성 화합물에 포함되는 우레탄(메트)아크릴레이트가 상기 화학식 (A)로 표시되는 구조인 것에 의해 접착제 조성물에 적절한 가요성이 부여되고, PET나 PC, PEN 등의 열 가소성 수지를 포함하는 기재로 구성되는 회로 부재 사이의 접착 강도가 향상하여, 우수한 접속 신뢰성을 얻을 수 있다. 또한, 장시간의 신뢰성 시험 후에도 안정된 성능을 유지할 수 있다.In this adhesive composition, (b) the urethane (meth) acrylate contained in a radically polymerizable compound is a structure represented by the said General formula (A), and cohesion energy density improves and a thermoplastic composition whose adhesive composition and Tg are 200 degrees C or less. The wettability with the base material (for example, PET, PC, PEN, etc.) containing resin improves, the adhesive strength between the circuit members comprised from the base material containing thermoplastic resins, such as PET, PC, PEN, improves, and is excellent. Connection reliability can be obtained. Moreover, when the urethane (meth) acrylate contained in the (b) radically polymerizable compound is a structure represented by the said general formula (A), appropriate flexibility is provided to adhesive composition, and thermoplastics, such as PET, PC, and PEN, are provided. The adhesive strength between the circuit members comprised of the base material containing resin improves, and the outstanding connection reliability can be obtained. In addition, stable performance can be maintained even after a long-term reliability test.

본 발명의 접착제 조성물에 있어서, 우레탄(메트)아크릴레이트는 지방족 폴리에스테르디올을 이용하여 얻은 것인 것이 바람직하다. 우레탄(메트)아크릴레이트가 지방족 폴리에스테르디올을 이용하여 얻은 것인 것에 의해 접착제 조성물의 가요성이 향상하여, PET나 PC, PEN 등의 열 가소성 수지를 포함하는 기재로 구성되는 회로 부재 사이의 접착 강도가 향상하여 우수한 접속 신뢰성을 얻을 수 있다. In the adhesive composition of the present invention, the urethane (meth) acrylate is preferably one obtained using an aliphatic polyesterdiol. Since urethane (meth) acrylate is obtained using aliphatic polyesterdiol, the flexibility of the adhesive composition is improved, and the adhesion between circuit members composed of a substrate containing a thermoplastic resin such as PET, PC, or PEN The strength is improved and excellent connection reliability can be obtained.

또한, 본 발명의 접착제 조성물에 있어서는, 우레탄(메트)아크릴레이트의 중량 평균 분자량이 8000 이상 25000 미만인 것이 바람직하다. 우레탄(메트)아크릴레이트의 중량 평균 분자량이 상기 범위 내인 것에 의해 PET, PC, PEN 등의 유기 기재와의 접착 강도가 보다 향상하여, 우수한 접속 신뢰성을 얻을 수 있다. Moreover, in the adhesive composition of this invention, it is preferable that the weight average molecular weights of urethane (meth) acrylate are 8000 or more and less than 25000. By the weight average molecular weight of a urethane (meth) acrylate being in the said range, adhesive strength with organic base materials, such as PET, PC, and PEN, can be improved more, and the outstanding connection reliability can be obtained.

또한, 본 발명의 접착제 조성물에 있어서는, (b) 라디칼 중합성 화합물이 인산기를 갖는 비닐 화합물과, 인산기를 갖는 비닐 화합물 이외의 라디칼 중합성 화합물을 각각 1종 이상 함유하는 것이 바람직하다. (b) 라디칼 중합성 화합물이 이러한 구성을 구비함으로써, 특히 금속으로 이루어지는 기재와의 접착 강도가 보다 향상된다. Moreover, in the adhesive composition of this invention, it is preferable that (b) a radically polymerizable compound contains 1 or more types of radically polymerizable compounds other than the vinyl compound which has a phosphoric acid group, and the vinyl compound which has a phosphoric acid group, respectively. (b) When a radically polymerizable compound has such a structure, especially the adhesive strength with the base material which consists of metals improves more.

또한, 본 발명의 접착제 조성물에 있어서는, (a) 열 가소성 수지로서는, 페녹시 수지, 폴리우레탄 수지, 폴리에스테르우레탄 수지, 부티랄 수지, 아크릴 수지 및 폴리이미드 수지로 이루어지는 군으로부터 선택되는 적어도 1종을 함유하는 것이 바람직하다. (a) 열 가소성 수지로서, 이러한 수지를 함유함으로써 접착제 조성물의 내열성, 접착성이 보다 향상된다. Moreover, in the adhesive composition of this invention, as (a) thermoplastic resin, at least 1 sort (s) chosen from the group which consists of a phenoxy resin, a polyurethane resin, polyesterurethane resin, butyral resin, an acrylic resin, and a polyimide resin. It is preferable to contain. (a) As thermoplastic resin, by containing such resin, the heat resistance and adhesiveness of an adhesive composition improve more.

또한, 본 발명의 접착제 조성물에 있어서는, (d) 도전성 입자를 더 함유하는 것도 바람직하다. (d) 도전성 입자를 함유함으로써 접착제 조성물에 양호한 도전성 또는 이방 도전성을 부여할 수 있기 때문에, 접속 단자를 갖는 회로 부재끼리의 접착 용도 등에 보다 바람직하게 사용하는 것이 가능해진다. 또한, 상기 접착제 조성물을 통해 전기적으로 접속한 회로 부재의 접속 저항을 보다 충분히 감소할 수 있다. Moreover, in the adhesive composition of this invention, it is also preferable to contain (d) electroconductive particle further. (d) Since good electroconductivity or anisotropic electroconductivity can be provided to an adhesive composition by containing electroconductive particle, it becomes possible to use more preferably for the adhesive use etc. of circuit members which have a connection terminal. Moreover, the connection resistance of the circuit member electrically connected through the said adhesive composition can be reduced more fully.

또한, 본 발명은 주면 상에 제1 접속 단자를 갖는 제1 회로 부재와, 주면 상에 제2 접속 단자를 갖는 제2 회로 부재와, 접속 부재를 구비하는 회로 부재의 접속 구조체로서, 제1 접속 단자 및 제2 접속 단자가 대향하도록 제1 회로 부재 및 제2 회로 부재가 상기 접착제 조성물로 이루어지는 접속 부재를 통해 배치됨과 동시에, 제1 접속 단자 및 제2 접속 단자가 전기적으로 접속되어 있고, 제1 회로 부재 및/또는 상기 제2 회로 부재는, 유리 전이 온도가 200℃ 이하인 열 가소성 수지를 함유하는 기재로 구성되어 있는 회로 부재의 접속 구조체를 제공한다. Moreover, this invention is a connection structure of the 1st circuit member which has a 1st connection terminal on a main surface, the 2nd circuit member which has a 2nd connection terminal on a main surface, and the circuit member provided with a connection member, 1st connection. The 1st circuit member and the 2nd connection terminal are arrange | positioned through the connection member which consists of said adhesive composition so that a terminal and a 2nd connection terminal may oppose, and the 1st connection terminal and the 2nd connection terminal are electrically connected, and the 1st A circuit member and / or the said 2nd circuit member provide the connection structure of the circuit member comprised from the base material containing a thermoplastic resin whose glass transition temperature is 200 degrees C or less.

제1 회로 부재 및/또는 제2 회로 부재가 유리 전이 온도가 200℃ 이하인 열 가소성 수지를 함유하는 기재로 구성되어 있는 회로 부재인 것에 의해 접착제 조성물과의 습윤성이 향상하여 접착 강도가 보다 향상함으로써, 우수한 접속 신뢰성을 얻을 수 있다. When the first circuit member and / or the second circuit member are circuit members composed of a substrate containing a thermoplastic resin having a glass transition temperature of 200 ° C. or lower, the wettability with the adhesive composition is improved and the adhesive strength is further improved. Excellent connection reliability can be obtained.

상기 유리 전이 온도가 200℃ 이하인 열 가소성 수지는 폴리에틸렌테레프탈레이트, 폴리카보네이트 및 폴리에틸렌나프탈레이트로 이루어지는 군으로부터 선택되는 적어도 1종인 것이 바람직하다. 폴리에틸렌테레프탈레이트 등을 함유하는 기재로 구성되어 있는 회로 부재인 것에 의해 접착제 조성물과의 습윤성이 향상하여 접착 강도가 보다 향상함으로써, 우수한 접속 신뢰성을 얻을 수 있다. It is preferable that the thermoplastic resin whose said glass transition temperature is 200 degrees C or less is at least 1 sort (s) chosen from the group which consists of polyethylene terephthalate, polycarbonate, and polyethylene naphthalate. By being a circuit member comprised from the base material containing polyethylene terephthalate etc., the wettability with an adhesive composition improves and adhesive strength improves more, and it is possible to obtain the excellent connection reliability.

또한, 본 발명의 회로 부재의 접속 구조체에 있어서, 제1 회로 부재 또는 제2 회로 부재 중 하나의 회로 부재가 폴리에틸렌테레프탈레이트, 폴리카보네이트 및 폴리에틸렌나프탈레이트로 이루어지는 군으로부터 선택되는 적어도 1종을 함유하는 기재로 구성되고, 제1 회로 부재 또는 제2 회로 부재 중 다른 하나의 회로 부재가 폴리이미드 수지 및 폴리에틸렌테레프탈레이트로 이루어지는 군으로부터 선택되는 적어도 1종을 함유하는 기재로 구성되는 것이 바람직하다. 본 접속 구조체는 제1 회로 부재와 제2 회로 부재가 상기한 바와 같은 기재로 구성됨으로써, 접착제 조성물과의 습윤성 및 접착 강도가 보다 향상하여, 우수한 접속 신뢰성을 얻을 수 있다. Moreover, in the connection structure of the circuit member of this invention, the circuit member of one of a 1st circuit member or a 2nd circuit member contains at least 1 sort (s) chosen from the group which consists of polyethylene terephthalate, polycarbonate, and polyethylene naphthalate. It is preferable that it is comprised from a base material and the other circuit member of a 1st circuit member or a 2nd circuit member consists of a base material containing at least 1 sort (s) chosen from the group which consists of a polyimide resin and a polyethylene terephthalate. Since this 1st circuit member and a 2nd circuit member are comprised from the base material mentioned above, this connection structure can improve the wettability and adhesive strength with an adhesive composition, and can obtain the outstanding connection reliability.

본 발명은 주면 상에 제1 접속 단자를 갖는 제1 회로 부재와, 주면 상에 제2 접속 단자를 갖는 제2 회로 부재를, 상기 접착제 조성물을 통해 제1 접속 단자 및 제2 접속 단자가 대향하도록 배치하는 공정과, 접착제 조성물을 가열하여 경화시켜, 제1 회로 부재와 제2 회로 부재를 접속하는 공정을 구비하는, 회로 부재의 접속 구조체의 제조 방법을 제공한다. 본 제조 방법에 따르면, 제1 회로 부재와 제2 회로 부재를 상기 접착제 조성물로 접속함으로써 우수한 접속 신뢰성을 갖는 회로 부재의 접속 구조체를 얻을 수 있다. The present invention provides a first circuit member having a first connection terminal on a main surface and a second circuit member having a second connection terminal on a main surface such that the first connection terminal and the second connection terminal face each other through the adhesive composition. The manufacturing method of the circuit member connection structure provided with the process of arrange | positioning, and the process of heating and hardening an adhesive composition and connecting a 1st circuit member and a 2nd circuit member are provided. According to this manufacturing method, the connection structure of the circuit member which has the outstanding connection reliability can be obtained by connecting a 1st circuit member and a 2nd circuit member with the said adhesive composition.

또한, 본 발명은 (a) 열 가소성 수지, (b) 라디칼 중합성 화합물 및 (c) 라디칼 중합 개시제를 함유하며, (b) 라디칼 중합성 화합물이 25 내지 40 mN/m의 임계 표면 장력을 갖는 우레탄(메트)아크릴레이트를 포함하는 접착제 조성물의, 주면 상에 제1 접속 단자를 갖는 제1 회로 부재와, 주면 상에 제2 접속 단자를 갖는 제2 회로 부재로서, 적어도 하나의 회로 부재가 유리 전이 온도 200℃ 이하의 열 가소성 수지를 포함하는 기재로 구성된, 제1 회로 부재 및 제2 회로 부재를 접속하기 위한 접착제 조성물로서의 용도를 제공한다. 25 내지 40 mN/m의 임계 표면 장력을 갖는 우레탄(메트)아크릴레이트를 포함하는 (b) 라디칼 중합성 화합물을 함유하는 본 접착제 조성물은 Tg가 200℃ 이하의 열 가소성 수지를 포함하는 기재(예를 들면 PET, PC, PEN 등)와의 습윤성이 향상하여, 저온 경화에서의 접착이 가능해지기 때문에, 회로 부재를 접속하기 위한 접착제 조성물로서의 용도에 바람직하다. In addition, the present invention contains (a) a thermoplastic resin, (b) a radically polymerizable compound and (c) a radical polymerization initiator, and (b) the radically polymerizable compound has a critical surface tension of 25 to 40 mN / m. At least one circuit member is free as a 1st circuit member which has a 1st connection terminal on the main surface, and a 2nd circuit member which has a 2nd connection terminal on the main surface of the adhesive composition containing a urethane (meth) acrylate. The use as an adhesive composition for connecting a 1st circuit member and a 2nd circuit member comprised with the base material containing a thermoplastic resin of transition temperature 200 degrees C or less is provided. The present adhesive composition containing (b) a radically polymerizable compound comprising a urethane (meth) acrylate having a critical surface tension of 25 to 40 mN / m includes a substrate comprising a thermoplastic resin having a Tg of 200 ° C. or lower (eg, For example, since wettability with PET, PC, PEN, etc.) improves and adhesion in low-temperature hardening becomes possible, it is suitable for the use as an adhesive composition for connecting a circuit member.

상기 용도에 있어서는, 우레탄(메트)아크릴레이트가 하기 화학식 (A)로 표시되는 우레탄(메트)아크릴레이트인 것이 바람직하다. 우레탄(메트)아크릴레이트가 하기 화학식 (A)로 표시되는 구조인 것에 의해 회로 부재 사이의 접착 강도가 향상하여 우수한 접속 신뢰성을 얻을 수 있다. In the said use, it is preferable that urethane (meth) acrylate is a urethane (meth) acrylate represented by following General formula (A). Since urethane (meth) acrylate is a structure represented by following General formula (A), the adhesive strength between circuit members can improve and the outstanding connection reliability can be obtained.

Figure pat00005
Figure pat00005

[화학식 (A) 중, R1 및 R2는 각각 독립적으로 수소 원자 또는 메틸기를 나타내고, R3은 에틸렌기, 프로필렌기, ε-카프로락톤의 개환 화합물로부터 유도되는 기, 또는 하기 화학식 (B)로 표시되는 기를 나타내고, R4는 하기 화학식 (B)로 표시되는 기를 나타내고, R5는 포화 지방족기 또는 포화 지환식기를 나타내고, a는 1 내지 40의 정수를 나타냄][In Formula (A), R <1> and R <2> represents a hydrogen atom or a methyl group each independently, R <3> is group derived from the ring-opening compound of ethylene group, a propylene group, (epsilon) -caprolactone, or following formula (B) Represents a group represented by R 4 represents a group represented by the following formula (B), R 5 represents a saturated aliphatic group or a saturated alicyclic group, and a represents an integer of 1 to 40.]

Figure pat00006
Figure pat00006

[화학식 (B) 중, R6 및 R7은 각각 독립적으로 탄소수 2 내지 12의 직쇄 또는 분지쇄의 알킬렌기를 나타내고, b는 1 내지 10의 정수를 나타내고, c는 1 내지 25의 정수를 나타내며, 식 중, R6끼리, R7끼리, b끼리 및 c끼리는 각각 동일하거나 상이할 수도 있음] [In formula (B), R <6> and R <7> respectively independently represents the C2-C12 linear or branched alkylene group, b represents the integer of 1-10, c represents the integer of 1-25. , Wherein, R 6 , R 7 , b and c may be the same or different.

또한, 본 발명은 (a) 열 가소성 수지, (b) 라디칼 중합성 화합물 및 (c) 라디칼 중합 개시제를 함유하며, (b) 라디칼 중합성 화합물이 하기 화학식 (A)로 표시되는 우레탄(메트)아크릴레이트를 포함하는 접착제 조성물의, 주면 상에 제1 접속 단자를 갖는 제1 회로 부재와, 주면 상에 제2 접속 단자를 갖는 제2 회로 부재로서, 적어도 하나의 회로 부재가 유리 전이 온도 200℃ 이하의 열 가소성 수지를 포함하는 기재로 구성된, 제1 회로 부재 및 제2 회로 부재를 접속하기 위한 접착제 조성물로서의 용도를 제공한다. 우레탄(메트)아크릴레이트가 하기 화학식 (A)로 표시되는 구조인 것에 의해 회로 부재 사이의 접착 강도가 향상하여 우수한 접속 신뢰성을 얻을 수 있다. Moreover, this invention contains urethane (meth) containing (a) a thermoplastic resin, (b) radically polymerizable compound, and (c) radical polymerization initiator, and (b) radically polymerizable compound is represented by following General formula (A) At least one circuit member has a glass transition temperature of 200 ° C. as a first circuit member having a first connection terminal on a main surface and a second circuit member having a second connection terminal on a main surface of an adhesive composition comprising an acrylate. The use as an adhesive composition for connecting the 1st circuit member and the 2nd circuit member comprised with the base material containing the following thermoplastic resins is provided. Since urethane (meth) acrylate is a structure represented by following General formula (A), the adhesive strength between circuit members can improve and the outstanding connection reliability can be obtained.

Figure pat00007
Figure pat00007

[화학식 (A) 중, R1 및 R2는 각각 독립적으로 수소 원자 또는 메틸기를 나타내고, R3은 에틸렌기, 프로필렌기, ε-카프로락톤의 개환 화합물로부터 유도되는 기, 또는 하기 화학식 (B)로 표시되는 기를 나타내고, R4는 하기 화학식 (B)로 표시되는 기를 나타내고, R5는 포화 지방족기 또는 포화 지환식기를 나타내고, a는 1 내지 40의 정수를 나타냄][In Formula (A), R <1> and R <2> represents a hydrogen atom or a methyl group each independently, R <3> is group derived from the ring-opening compound of ethylene group, a propylene group, (epsilon) -caprolactone, or following formula (B) Represents a group represented by R 4 represents a group represented by the following formula (B), R 5 represents a saturated aliphatic group or a saturated alicyclic group, and a represents an integer of 1 to 40.]

Figure pat00008
Figure pat00008

[화학식 (B) 중, R6 및 R7은 각각 독립적으로 탄소수 2 내지 12의 직쇄 또는 분지쇄의 알킬렌기를 나타내고, b는 1 내지 10의 정수를 나타내고, c는 1 내지 25의 정수를 나타내며, 식 중, R6끼리, R7끼리, b끼리 및 c끼리는 각각 동일하거나 상이할 수도 있음][In formula (B), R <6> and R <7> respectively independently represents the C2-C12 linear or branched alkylene group, b represents the integer of 1-10, c represents the integer of 1-25. , Wherein, R 6 , R 7 , b and c may be the same or different.

상기 용도에 있어서는, 우레탄(메트)아크릴레이트는 지방족 폴리에스테르디올을 이용하여 얻은 것인 것이 바람직하다. 우레탄(메트)아크릴레이트가 지방족 폴리에스테르디올을 이용하여 얻은 것인 것에 의해 접착제 조성물의 가요성이 향상하고, PET나 PC, PEN 등의 열 가소성 수지를 포함하는 기재로 구성되는 회로 부재 사이의 접착 강도가 향상하여, 우수한 접속 신뢰성을 얻을 수 있다. In the said use, it is preferable that urethane (meth) acrylate is obtained using aliphatic polyesterdiol. Since urethane (meth) acrylate is obtained using aliphatic polyesterdiol, the flexibility of the adhesive composition is improved, and the adhesion between the circuit members composed of a substrate containing a thermoplastic resin such as PET, PC, or PEN The strength is improved, and excellent connection reliability can be obtained.

상기 용도에 있어서는, 우레탄(메트)아크릴레이트의 중량 평균 분자량이 8000 이상 25000 미만인 것이 바람직하다. 우레탄(메트)아크릴레이트의 중량 평균 분자량이 상기 범위 내인 것에 의해 PET, PC, PEN 등의 유기 기재와의 접착 강도가 보다 향상하여, 우수한 접속 신뢰성을 얻을 수 있다. In the said use, it is preferable that the weight average molecular weights of urethane (meth) acrylates are 8000 or more and less than 25000. By the weight average molecular weight of a urethane (meth) acrylate being in the said range, adhesive strength with organic base materials, such as PET, PC, and PEN, can be improved more, and the outstanding connection reliability can be obtained.

상기 용도에 있어서는, (b) 라디칼 중합성 화합물이 인산기를 갖는 비닐 화합물과, 인산기를 갖는 비닐 화합물 이외의 라디칼 중합성 화합물을 각각 1종 이상 함유하는 것이 바람직하다. (b) 라디칼 중합성 화합물이 이러한 구성을 구비함으로써, 특히 금속으로 이루어지는 기재와의 접착 강도가 보다 향상된다. In the said use, it is preferable that (b) radically polymerizable compound contains 1 or more types of radically polymerizable compounds other than the vinyl compound which has a phosphoric acid group, and the vinyl compound which has a phosphoric acid group, respectively. (b) When a radically polymerizable compound has such a structure, especially the adhesive strength with the base material which consists of metals improves more.

상기 용도에 있어서는, (a) 열 가소성 수지로서는, 페녹시 수지, 폴리우레탄 수지, 폴리에스테르우레탄 수지, 부티랄 수지, 아크릴 수지 및 폴리이미드 수지로 이루어지는 군으로부터 선택되는 적어도 1종을 함유하는 것이 바람직하다. (a) 열 가소성 수지로서, 이러한 수지를 함유함으로써, 내열성, 접착성이 보다 향상된다.In the said use, it is preferable that (a) thermoplastic resin contains at least 1 sort (s) chosen from the group which consists of a phenoxy resin, a polyurethane resin, polyesterurethane resin, butyral resin, an acrylic resin, and a polyimide resin. Do. (a) As thermoplastic resin, by containing such resin, heat resistance and adhesiveness improve more.

상기 용도에 있어서는, 접착제 조성물이 (d) 도전성 입자를 더 함유하는 것이 바람직하다. (d) 도전성 입자를 함유함으로써 접착제 조성물에 양호한 도전성 또는 이방 도전성을 부여할 수 있고, 또한 전기적으로 접속한 회로 부재의 접속 저항을 보다 충분히 감소할 수 있다. In the said use, it is preferable that adhesive composition contains (d) electroconductive particle further. (d) By containing electroconductive particle, favorable electroconductivity or anisotropic electroconductivity can be provided to an adhesive composition, and the connection resistance of the circuit member electrically connected can be reduced more fully.

본 발명에 따르면, 폴리에틸렌테레프탈레이트, 폴리카보네이트, 폴리에틸렌나프탈레이트 등의 유기 기재에 대하여 저온의 경화 조건에서도 우수한 접착 강도를 얻을 수 있고, 장시간의 신뢰성 시험(고온 고습 시험) 후에 있어서도 안정된 성능(접착 강도나 접속 저항)을 유지할 수 있는 접착제 조성물, 그것을 이용한 회로 부재의 접속 구조체, 회로 부재의 접속 구조체의 제조 방법 및 접착제 조성물의 용도를 제공할 수 있다. According to the present invention, excellent adhesive strength can be obtained with respect to organic substrates such as polyethylene terephthalate, polycarbonate and polyethylene naphthalate even under low temperature curing conditions, and stable performance even after a long time reliability test (high temperature and high humidity test) (adhesive strength) (B) connection resistance), the connection structure of the circuit member using the same, the manufacturing method of the connection structure of a circuit member, and the use of an adhesive composition can be provided.

도 1은 본 실시 형태의 접착제 조성물을 이용한, 회로 부재의 접속 구조체의 일 실시 형태를 도시하는 모식 단면도이다.
도 2는 도 1에 도시하는 회로 부재의 접속 구조체를 제작하기 전의, 제1 회로 부재, 제2 회로 부재 및 접착제 조성물을 도시하는 모식 단면도이다.
도 3은 본 실시 형태의 접착제 조성물(도전성 입자 함유)을 이용한, 회로 부재의 접속 구조체의 일 실시 형태를 도시하는 모식 단면도이다.
도 4는 도 3에 도시하는 회로 부재의 접속 구조체를 제작하기 전의, 제1 회로 부재, 제2 회로 부재 및 접착제 조성물(도전성 입자 함유)을 도시하는 모식 단면도이다.
1: is a schematic cross section which shows one Embodiment of the connection structure of a circuit member using the adhesive composition of this embodiment.
FIG. 2: is a schematic cross section which shows a 1st circuit member, a 2nd circuit member, and an adhesive composition before manufacturing the connection structure of the circuit member shown in FIG.
FIG. 3: is a schematic cross section which shows one Embodiment of the connection structure of a circuit member using the adhesive composition (containing electroconductive particle) of this embodiment.
FIG. 4: is a schematic cross section which shows the 1st circuit member, the 2nd circuit member, and adhesive composition (containing electroconductive particle) before producing the connection structure of the circuit member shown in FIG.

이하, 경우에 따라 도면을 참조하면서, 본 발명의 바람직한 실시 형태에 대해서 상세히 설명한다. 또한, 도면 중, 동일 또는 상당 부분에는 동일 부호를 붙여 중복하는 설명은 생략한다. 또한, 본 실시 형태에서, (메트)아크릴산이란 아크릴산 또는 그것에 대응하는 메타크릴산을 나타내고, (메트)아크릴레이트란 아크릴레이트 또는 그것에 대응하는 메타아크릴레이트를 의미하고, (메트)아크릴로일기란 아크릴로일기 또는 메타크릴로일기를 의미한다. EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment of this invention is described in detail, referring drawings as needed. In addition, description which attaches | subjects the same code | symbol to the same or equivalent part in the drawing, and overlaps is abbreviate | omitted. In addition, in this embodiment, (meth) acrylic acid represents acrylic acid or methacrylic acid corresponding to it, (meth) acrylate means acrylate or methacrylate corresponding to it, and (meth) acryloyl group is acryl It means a loyl group or methacryloyl group.

본 실시 형태에서의 「유리 전이 온도(Tg)」란 필름상의 유기 기재를 TA 인스트루먼트사 제조의 점탄성 분석기 「RSA-3」(상품명)을 이용하여, 승온 속도 5℃/분, 주파수 10 Hz, 측정 온도 -150 내지 300℃의 조건에서 측정한, Tg 부근의 tanδ 피크 온도의 값을 말한다. "Glass transition temperature (Tg)" in this embodiment is measured using a viscoelastic analyzer "RSA-3" (trade name) manufactured by TA Instruments, Inc., at an elevated temperature of 5 deg. The value of tan-delta peak temperature in the vicinity of Tg is measured on the conditions of temperature -150-300 degreeC.

또한, 본 실시 형태에서의 「임계 표면 장력(γc)」이란, 필름상으로 한 우레탄(메트)아크릴레이트에 순수, 습윤 장력 시험용 혼합 용액 No.50, 60(와코 준야꾸 고교(주) 제조)를 각각 23℃에서 1 μl 적하한 직후의 우레탄(메트)아크릴레이트 표면과의 이루는 각(접촉각 θ)을 실측하고, 각 액체의 표면 장력을 x축으로, COSθ를 y축으로 플롯했을 때에, 3점을 통과하는 직선이 Y=1이 될 때의 표면 장력을 말한다. 또한, 상기 순수, No.50, 60의 측정에서 얻어진 3점을 통과하는 직선이 Y=1인 때, X가 마이너스의 값이 된 경우에 대해서는, 순수, 습윤 장력 시험용 혼합 용액 No.60, 1-브로모나프탈렌(와코 준야꾸 고교(주) 제조)을 이용하여 상기와 동일한 측정을 행하고, 얻어진 3점을 통과하는 직선이 Y=1이 될 때의 표면 장력의 값을 이용할 수도 있다. Note that when manufacturing "critical surface tension (γ c)" refers to a urethane (meth) pure water, a wetting tension acrylate in the form of a film test mixture No.50, 60 (Wako Junya packed Kogyo Co., Ltd. according to the present embodiment When the angle (contact angle θ) formed with the urethane (meth) acrylate surface immediately after dropping 1 µl each at 23 ° C was measured, and the surface tension of each liquid was plotted on the x-axis and COSθ on the y-axis, The surface tension when the straight line passing through three points becomes Y = 1. In addition, when X becomes a negative value when the straight line which passes three points obtained by the said pure water and the measurement of No.50, 60 is Y = 1, the mixed solution No.60, 1 for pure water and a wet tension test The same measurement as described above is carried out using bromonaphthalene (manufactured by Wako Junyaku Kogyo Co., Ltd.), and the value of the surface tension when the straight line passing through the obtained three points becomes Y = 1 may be used.

또한, 본 실시 형태에서, 「중량 평균 분자량」 및 「수 평균 분자량」이란, 표 1에 나타내는 조건에 따라 겔 침투 크로마토그래프(GPC)로부터 표준 폴리스티렌에 의한 검량선을 이용하여 측정한 값을 말한다. In addition, in this embodiment, a "weight average molecular weight" and a "number average molecular weight" mean the value measured using the analytical curve by standard polystyrene from the gel permeation chromatograph (GPC) according to the conditions shown in Table 1.

Figure pat00009
Figure pat00009

본 실시 형태의 접착제 조성물은 주면 상에 제1 접속 단자를 갖는 제1 회로 부재와, 주면 상에 제2 접속 단자를 갖는 제2 회로 부재를 접속하기 위한 접착제 조성물로서, 제1 회로 부재 및/또는 제2 회로 부재는, 유리 전이 온도가 200℃ 이하인 열 가소성 수지를 포함하는 기재로 구성되고, 접착제 조성물은 (a) 열 가소성 수지, (b) 라디칼 중합성 화합물 및 (c) 라디칼 중합 개시제를 함유하며, (b) 라디칼 중합성 화합물이 25 내지 40 mN/m의 임계 표면 장력을 갖는 우레탄(메트)아크릴레이트를 포함하는 접착제 조성물이다. The adhesive composition of this embodiment is an adhesive composition for connecting the 1st circuit member which has a 1st connection terminal on a main surface, and the 2nd circuit member which has a 2nd connection terminal on a main surface, Comprising: 1st circuit member and / or A 2nd circuit member is comprised from the base material containing the thermoplastic resin whose glass transition temperature is 200 degrees C or less, and an adhesive composition contains (a) thermoplastic resin, (b) radically polymerizable compound, and (c) radical polymerization initiator And (b) the radically polymerizable compound comprises a urethane (meth) acrylate having a critical surface tension of 25 to 40 mN / m.

본 실시 형태의 접착제 조성물에 함유되는 (a) 열 가소성 수지는 가열에 의해 점도가 높은 액상 상태로 되어 외력에 의해 자유롭게 변형하고, 냉각하여 외력을 제거하면 그의 형상을 유지한 채로 딱딱해지고, 이 과정을 반복하여 행할 수 있는 성질을 갖는 수지(고분자)를 말한다. 또한, 상기한 성질을 갖는 반응성 관능기를 갖는 수지(고분자)도 포함한다. (a) 열 가소성 수지의 Tg는 0 내지 190℃가 바람직하고, 20 내지 170℃가 보다 바람직하다. The thermoplastic resin (a) contained in the adhesive composition of the present embodiment becomes a liquid state having a high viscosity by heating, and deforms freely by external force, and when cooled to remove the external force, becomes hard while maintaining its shape. It refers to resin (polymer) which has the property which can be performed repeatedly. Moreover, resin (polymer) which has a reactive functional group which has the above-mentioned property is also included. (a) 0-190 degreeC is preferable and, as for Tg of a thermoplastic resin, 20-170 degreeC is more preferable.

이러한 열 가소성 수지로서는, 폴리이미드 수지, 폴리아미드 수지, 페녹시 수지, (메트)아크릴 수지, 우레탄 수지, 폴리에스테르우레탄 수지, 폴리비닐부티랄 수지 등을 사용할 수 있다. 이들은 단독 또는 2종 이상을 혼합하여 사용할 수 있다. 또한, 이들 열 가소성 수지 중에는 실록산 결합이나 불소 치환기가 포함되어 있을 수도 있다. 이들은, 혼합하는 수지끼리가 완전히 상용하거나, 또는 마이크로상 분리가 생겨 백탁하는 상태이면 바람직하게 사용할 수 있다. As such a thermoplastic resin, a polyimide resin, a polyamide resin, a phenoxy resin, a (meth) acrylic resin, a urethane resin, a polyester urethane resin, a polyvinyl butyral resin, or the like can be used. These may be used alone or in combination of two or more. In addition, these thermoplastic resins may contain a siloxane bond or a fluorine substituent. These resins can be suitably used as long as the resins to be mixed are completely compatible or have a microphase separation.

접착제 조성물을 필름상으로 하여 이용하는 경우, 상기 열 가소성 수지의 분자량이 클수록 양호한 필름 형성성이 용이하게 얻어지고, 또한 필름상 접착제 조성물로서의 유동성에 영향을 주는 용융 점도를 광범위하게 설정할 수 있다. (a) 열 가소성 수지의 중량 평균 분자량으로서는 5000 내지 150000이 바람직하고, 10000 내지 80000이 보다 바람직하다. 이 값이 5000 미만이면 양호한 필름 형성성이 얻어지기 어려운 경향이 있고, 150000을 초과하면 다른 성분과의 양호한 상용성이 얻어지기 어려운 경향이 있다. When the adhesive composition is used in the form of a film, the higher the molecular weight of the thermoplastic resin is, the better the film formability can be easily obtained, and the melt viscosity affecting the fluidity as the film adhesive composition can be set widely. (a) As a weight average molecular weight of a thermoplastic resin, 5000-150000 are preferable and 10000-80000 are more preferable. When this value is less than 5000, there exists a tendency for favorable film formability to be difficult to be obtained, and when it exceeds 150000, there exists a tendency for favorable compatibility with other components to be difficult to be obtained.

본 실시 형태의 접착제 조성물에 있어서, (a) 열 가소성 수지의 함유량은 접착제 조성물 전량을 기준으로 하여 5 내지 80 질량%인 것이 바람직하고, 15 내지 70 질량%인 것이 보다 바람직하다. 이 함유량이 5 질량% 미만이면, 접착제 조성물을 필름상으로 하여 이용하는 경우에 특히, 양호한 필름 형성성이 얻어지기 어려운 경향이 있고, 80 질량%를 초과하면, 양호한 접착제 조성물의 유동성이 얻어지기 어려운 경향이 있다. In the adhesive composition of this embodiment, it is preferable that it is 5-80 mass%, and, as for content of (a) thermoplastic resin, it is more preferable that it is 15-70 mass% based on adhesive composition whole quantity. When this content is less than 5 mass%, when using an adhesive composition in a film form, especially tends to be difficult to obtain favorable film formability, and when it exceeds 80 mass%, the tendency which the fluidity of a favorable adhesive composition is hard to be acquired is There is this.

본 실시 형태의 접착제 조성물에 함유되는 (b) 라디칼 중합성 화합물은 라디칼 중합 개시제의 작용으로 라디칼 중합을 발생시키는 화합물을 말하는데, 광이나 열 등의 활성화 에너지를 부여함으로써 그것 자체가 라디칼을 발생시키는 화합물일 수도 있다. (b) 라디칼 중합성 화합물로서는, 예를 들면 비닐기, (메트)아크릴로일기, 알릴기, 말레이미드기 등의 활성 라디칼에 의해서 중합하는 관능기를 갖는 화합물을 바람직하게 사용 가능하다. The radically polymerizable compound (b) contained in the adhesive composition of the present embodiment refers to a compound that generates radical polymerization by the action of a radical polymerization initiator, which itself generates radicals by applying activation energy such as light or heat. It may be. (b) As a radically polymerizable compound, the compound which has a functional group superposing | polymerizing with active radicals, such as a vinyl group, a (meth) acryloyl group, an allyl group, and a maleimide group, can be used preferably, for example.

(b) 라디칼 중합성 화합물로서 구체적으로는 에폭시(메트)아크릴레이트올리고머, 우레탄(메트)아크릴레이트올리고머, 폴리에테르(메트)아크릴레이트올리고머, 폴리에스테르(메트)아크릴레이트올리고머 등의 올리고머, 트리메틸올프로판트리(메트)아크릴레이트, 폴리에틸렌글리콜디(메트)아크릴레이트, 폴리알킬렌글리콜디(메트)아크릴레이트, 디시클로펜테닐(메트)아크릴레이트, 디시클로펜테닐옥시에틸(메트)아크릴레이트, 네오펜틸글리콜디(메트)아크릴레이트, 디펜타에리트리톨헥사(메트)아크릴레이트, 이소시아누르산 변성 2관능 (메트)아크릴레이트, 이소시아누르산 변성 3관능 (메트)아크릴레이트, 비스페녹시에탄올플루오렌아크릴레이트, 비스페놀플루오렌디글리시딜에테르의 글리시딜기에 (메트)아크릴산을 부가시킨 에폭시(메트)아크릴레이트, 비스페녹시에탄올플루오렌아크릴레이트, 비스페놀플루오렌디글리시딜에테르의 글리시딜기에 (메트)아크릴산을 부가시킨 에폭시(메트)아크릴레이트, 비스페놀플루오렌디글리시딜에테르의 글리시딜기에 에틸렌글리콜이나 프로필렌글리콜을 부가시킨 화합물에 (메트)아크릴로일옥시기를 도입한 화합물, 하기 화학식 (C) 및 (D)로 표시되는 화합물 등을 들 수 있다.(b) As a radically polymerizable compound, specifically, oligomers, such as an epoxy (meth) acrylate oligomer, a urethane (meth) acrylate oligomer, a polyether (meth) acrylate oligomer, and a polyester (meth) acrylate oligomer, trimethylol Propane tri (meth) acrylate, polyethylene glycol di (meth) acrylate, polyalkylene glycol di (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, Neopentylglycoldi (meth) acrylate, dipentaerythritol hexa (meth) acrylate, isocyanuric acid modified bifunctional (meth) acrylate, isocyanuric acid modified trifunctional (meth) acrylate, bisphenoxy Epoxy (meth) acrylic which added (meth) acrylic acid to glycidyl group of ethanol fluorene acrylate and bisphenol fluorene diglycidyl ether Glyci of epoxy (meth) acrylate and bisphenol fluorene diglycidyl ether which added (meth) acrylic acid to the glycidyl group of bisphenoxy ethanol fluorene acrylate and bisphenol fluorene diglycidyl ether The compound which introduce | transduced the (meth) acryloyloxy group into the compound which added ethylene glycol and propylene glycol to the diyl group, the compound represented by following formula (C) and (D), etc. are mentioned.

Figure pat00010
Figure pat00010

[화학식 (C) 중, R8 및 R9는 각각 독립적으로 수소 원자 또는 메틸기를 나타내고, d 및 e는 각각 독립적으로 1 내지 8의 정수를 나타냄][In formula (C), R <8> and R <9> represents a hydrogen atom or a methyl group each independently, d and e represent the integer of 1-8 each independently.]

Figure pat00011
Figure pat00011

[화학식 (D) 중, R10 및 R11은 각각 독립적으로 수소 원자 또는 메틸기를 나타내고, f 및 g는 각각 독립적으로 0 내지 8의 정수를 나타냄] [In formula (D), R <10> and R <11> represents a hydrogen atom or a methyl group each independently, f and g represent the integer of 0-8 each independently.]

또한, (b) 라디칼 중합성 화합물로서는, 단독으로 30℃로 정치한 경우에 왁스상, 납상, 결정상, 유리상, 분말상 등의 유동성이 없이 고체 상태를 나타내는 것이어도 특별히 제한하지 않고 사용할 수 있다. 이러한 (b) 라디칼 중합성 화합물로서 구체적으로, N,N'-메틸렌비스아크릴아미드, 다이아세톤아크릴아미드, N-메틸올아크릴아미드, N-페닐메타크릴아미드, 2-아크릴아미드-2-메틸프로판술폰산, 트리스(2-아크릴로일옥시에틸)이소시아누레이트, N-페닐말레이미드, N-(o-메틸페닐)말레이미드, N-(m-메틸페닐)말레이미드, N-(p-메틸페닐)-말레이미드, N-(o-메톡시페닐)말레이미드, N-(m-메톡시페닐)말레이미드, N-(p-메톡시페닐)-말레이미드, N-메틸말레이미드, N-에틸말레이미드, N-옥틸말레이미드, 4,4'-디페닐메탄비스말레이미드, m-페닐렌비스말레이미드, 3,3'-디메틸-5,5'-디에틸-4,4'-디페닐메탄비스말레이미드, 4-메틸-1,3-페닐렌비스말레이미드, N-메타크릴옥시말레이미드, N-아크릴옥시말레이미드, 1,6-비스말레이미드-(2,2,4-트리메틸)헥산, N-메타크릴로일옥시숙신산이미드, N-아크릴로일옥시숙신산이미드, 2-나프틸메타크릴레이트, 2-나프틸아크릴레이트, 펜타에리트리톨테트라아크릴레이트, 디비닐에틸렌요소, 디비닐프로필렌요소, 2-폴리스티릴에틸메타크릴레이트, N-페닐-N'-(3-메타크릴로일옥시-2-히드록시프로필)-p-페닐렌디아민, N-페닐-N'-(3-아크릴로일옥시-2-히드록시프로필)-p-페닐렌디아민, 테트라메틸피페리딜메타크릴레이트, 테트라메틸피페리딜아크릴레이트, 펜타메틸피페리딜메타크릴레이트, 펜타메틸피페리딜아크릴레이트, 옥타데실아크릴레이트, N-t-부틸아크릴아미드, 디아세톤아크릴아미드, N-(히드록시메틸)아크릴아미드, 하기 화학식 (E) 내지 (N)으로 표시되는 화합물 등을 들 수 있다.The radically polymerizable compound (b) may be used without particular limitation even when the mixture is left alone at 30 ° C. even if it exhibits a solid state without fluidity such as wax, lead, crystal, glass, or powder. Specifically as such a (b) radically polymerizable compound, N, N'-methylenebisacrylamide, diacetone acrylamide, N-methylol acrylamide, N-phenyl methacrylamide, 2-acrylamide-2-methylpropane Sulfonic acid, tris (2-acryloyloxyethyl) isocyanurate, N-phenylmaleimide, N- (o-methylphenyl) maleimide, N- (m-methylphenyl) maleimide, N- (p-methylphenyl) -Maleimide, N- (o-methoxyphenyl) maleimide, N- (m-methoxyphenyl) maleimide, N- (p-methoxyphenyl) -maleimide, N-methylmaleimide, N-ethyl Maleimide, N-octylmaleimide, 4,4'-diphenylmethanebismaleimide, m-phenylenebismaleimide, 3,3'-dimethyl-5,5'-diethyl-4,4'-di Phenylmethanebismaleimide, 4-methyl-1,3-phenylenebismaleimide, N-methacryloxymaleimide, N-acryloxymaleimide, 1,6-bismaleimide- (2,2,4- Trimethyl) hexane, N-methacryloyloxysuccinate N-acryloyloxysuccinimide, 2-naphthyl methacrylate, 2-naphthyl acrylate, pentaerythritol tetraacrylate, divinyl ethylene urea, divinyl propylene urea, 2-polytyryl ethyl meth Acrylate, N-phenyl-N '-(3-methacryloyloxy-2-hydroxypropyl) -p-phenylenediamine, N-phenyl-N'-(3-acryloyloxy-2-hydroxy Oxypropyl) -p-phenylenediamine, tetramethylpiperidyl methacrylate, tetramethylpiperidyl acrylate, pentamethylpiperidyl methacrylate, pentamethylpiperidyl acrylate, octadecyl acrylate, Nt -Butyl acrylamide, diacetone acrylamide, N- (hydroxymethyl) acrylamide, the compound represented by following General formula (E)-(N), etc. are mentioned.

Figure pat00012
Figure pat00012

[화학식 (E) 중, h는 1 내지 10의 정수를 나타냄][In formula (E), h represents the integer of 1-10.]

Figure pat00013
Figure pat00013

Figure pat00014
Figure pat00014

[화학식 (G) 중, R12 및 R13은 각각 독립적으로 수소 원자 또는 메틸기를 나타내고, i는 15 내지 30의 정수를 나타냄][In formula (G), R <12> and R <13> represents a hydrogen atom or a methyl group each independently, and i represents the integer of 15-30.]

Figure pat00015
Figure pat00015

[화학식 (H) 중, R14 및 R15는 각각 독립적으로 수소 원자 또는 메틸기를 나타내고, j는 15 내지 30의 정수를 나타냄][In formula (H), R <14> and R <15> represents a hydrogen atom or a methyl group each independently, j represents the integer of 15-30.]

Figure pat00016
Figure pat00016

[화학식 (I) 중, R16은 수소 원자 또는 메틸기를 나타냄][In formula (I), R <16> represents a hydrogen atom or a methyl group.]

Figure pat00017
Figure pat00017

[화학식 (J) 중, R17은 수소 원자 또는 메틸기를 나타내고, k는 1 내지 10의 정수를 나타냄][In formula (J), R <17> represents a hydrogen atom or a methyl group, k represents the integer of 1-10.]

Figure pat00018
Figure pat00018

[화학식 (K) 중, R18은 수소 원자 또는 하기 화학식 (i) 또는 (ii)로 표시되는 유기기를 나타내고, l은 1 내지 10의 정수를 나타냄]Formula (K) of, R 18 represents an organic group represented by a hydrogen atom or the following formula (i) or (ii), l represents an integer of 1 to 10;

Figure pat00019
Figure pat00019

Figure pat00020
Figure pat00020

Figure pat00021
Figure pat00021

[화학식 (L) 중, R19는 수소 원자 또는 하기 화학식 (iii) 또는 (iv)로 표시되는 유기기를 나타내고, m은 1 내지 10의 정수를 나타냄][In formula (L), R <19> represents a hydrogen atom or the organic group represented by following General formula (iii) or (iv), and m represents the integer of 1-10.

Figure pat00022
Figure pat00022

Figure pat00023
Figure pat00023

Figure pat00024
Figure pat00024

[화학식 (M) 중, R20은 수소 원자 또는 메틸기를 나타냄][In Formula (M), R 20 represents a hydrogen atom or a methyl group.]

Figure pat00025
Figure pat00025

[화학식 (N) 중, R21은 수소 원자 또는 메틸기를 나타냄] [In formula (N), R 21 represents a hydrogen atom or a methyl group.]

또한, (b) 라디칼 중합성 화합물에 속하는 화합물인, 인산기 함유 비닐 화합물이나, N-비닐 화합물 및 N,N-디알킬비닐 화합물로 이루어지는 군으로부터 선택되는 N-비닐계 화합물을 이들 이외의 (b) 라디칼 중합성 화합물과 병용할 수 있다. 인산기 함유 비닐 화합물의 병용에 의해 접착제 조성물의 금속 기재에의 접착성을 향상시키는 것이 가능하게 된다. 또한, N-비닐계 화합물의 병용에 의해 접착제 조성물의 가교율을 향상시킬 수 있다. Moreover, (b) N-vinyl type compound chosen from the group which consists of a phosphoric acid group containing vinyl compound which is a compound which belongs to a radically polymerizable compound, and an N-vinyl compound and an N, N-dialkylvinyl compound (b) ) Can be used in combination with a radically polymerizable compound. By using together a phosphoric acid group containing vinyl compound, it becomes possible to improve adhesiveness to the metal base material of an adhesive composition. Moreover, the crosslinking rate of an adhesive composition can be improved by using together N-vinyl type compound.

인산기 함유 비닐 화합물로서는, 인산기 및 비닐기를 갖는 화합물이면 특별히 제한은 없지만, 하기 화학식 (O) 내지 (Q)로 표시되는 화합물이 바람직하다. Although it will not restrict | limit especially if it is a compound which has a phosphoric acid group and a vinyl group as a phosphoric acid group containing vinyl compound, The compound represented by following formula (O)-(Q) is preferable.

Figure pat00026
Figure pat00026

[화학식 (O) 중, R22는 (메트)아크릴로일옥시기를 나타내고, R23은 수소 원자 또는 메틸기를 나타내고, n 및 o는 각각 독립적으로 1 내지 8의 정수를 나타내며, 식 중, R22끼리, R23끼리, n끼리 및 o끼리는 각각 동일하거나 상이할 수도 있음]In formula (O), R 22 represents a (meth) acryloyloxy group, R 23 represents a hydrogen atom or a methyl group, n and o each independently represent an integer of 1 to 8, and in the formula, R 22 May be identical to or different from each other, R 23 , n and o;

Figure pat00027
Figure pat00027

[화학식 (P) 중, R24는 (메트)아크릴로일옥시기를 나타내고, p 및 q는 각각 독립적으로 1 내지 8의 정수를 나타내며, 식 중, R24끼리, p끼리 및 q끼리는 각각 동일하거나 상이할 수도 있음][In formula (P), R <24> represents a (meth) acryloyloxy group, p and q respectively independently represent the integer of 1-8, In formula, R <24> , p, and q are the same each, or May be different]

Figure pat00028
Figure pat00028

[화학식 (Q) 중, R25는 (메트)아크릴로일옥시기를 나타내고, R26은 수소 원자 또는 메틸기를 나타내고, r 및 s는 각각 독립적으로 1 내지 8의 정수를 나타내며, 식 중, R26끼리 및 r끼리는 각각 동일하거나 상이할 수도 있음][In Formula (Q), R 25 represents a (meth) acryloyloxy group, R 26 represents a hydrogen atom or a methyl group, r and s each independently represent an integer of 1 to 8, and in the formula, R 26 May be identical to or different from each other]

인산기 함유 비닐 화합물로서 구체적으로는 아시드포스포옥시에틸메타크릴레이트, 아시드포스포옥시에틸아크릴레이트, 아시드포스포옥시프로필메타크릴레이트, 아시드포스포옥시폴리옥시에틸렌글리콜모노메타크릴레이트, 아시드포스포옥시폴리옥시프로필렌글리콜모노메타크릴레이트, 2,2'-디(메트)아크릴로일옥시디에틸포스페이트, EO 변성 인산디메타크릴레이트, 인산 변성 에폭시아크릴레이트, 인산비닐 등을 들 수 있다. Specific examples of the phosphoric acid group-containing vinyl compound include acid phospho oxyethyl methacrylate, acid phospho oxyethyl acrylate, acid phospho oxypropyl methacrylate, and acid phospho oxy polyoxyethylene glycol monomethacrylate. Acid phosphooxy polyoxypropylene glycol monomethacrylate, 2,2'-di (meth) acryloyloxydiethyl phosphate, EO modified phosphate dimethacrylate, phosphoric acid modified epoxy acrylate, vinyl phosphate, etc. are mentioned. Can be.

인산기 함유 비닐 화합물의 배합량은 인산기 함유 비닐 화합물 이외의 (b) 라디칼 중합성 화합물의 배합량은 독립적으로 (a) 열 가소성 수지 100 질량부에 대하여 0.2 내지 300 질량부로 하는 것이 바람직하고, 1 내지 200 질량부로 하는 것이 보다 바람직하고, 1 내지 50 질량부로 하는 것이 더욱 바람직하고, 1 내지 15 질량부로 하는 것이 특히 바람직하다. 인산기 함유 비닐 화합물의 배합량을 0.2 질량부 미만으로 하면 높은 접착 강도가 얻어지기 어려워지는 경향이 있고, 300 질량부를 초과하면 경화 후의 접착제 조성물의 물성이 저하되기 쉬워, 신뢰성을 확보하기 어려워지는 경향이 있다. The compounding amount of the phosphoric acid group-containing vinyl compound is preferably 0.2 to 300 parts by mass, and preferably 1 to 200 mass parts of the compounding amount of the (b) radically polymerizable compound other than the phosphoric acid group-containing vinyl compound independently (a) 100 parts by mass of the thermoplastic resin. It is more preferable to set it as a part, It is further more preferable to set it as 1-50 mass parts, It is especially preferable to set it as 1-15 mass parts. When the compounding quantity of a phosphate group containing vinyl compound is less than 0.2 mass part, it exists in the tendency for a high adhesive strength to be difficult to be obtained, and when it exceeds 300 mass parts, the physical property of the adhesive composition after hardening will fall easily, and it will become difficult to ensure reliability. .

한편, N-비닐계 화합물로서, 구체적으로는 N-비닐이미다졸, N-비닐피리딘, N-비닐피롤리돈, N-비닐포름아미드, N-비닐카프로락탐, 4,4'-비닐리덴비스(N,N-디메틸아닐린), N-비닐아세트아미드, N,N-디메틸아크릴아미드, N,N-디에틸아크릴아미드 등을 들 수 있다. Specific examples of the N-vinyl compound include N-vinylimidazole, N-vinylpyridine, N-vinylpyrrolidone, N-vinylformamide, N-vinylcaprolactam, 4,4'- Bis (N, N-dimethylaniline), N-vinylacetamide, N, N-dimethylacrylamide and N, N-diethylacrylamide.

상술한 인산기 함유 비닐 화합물에 해당하는 화합물을 제외한 (b) 라디칼 중합성 화합물의 배합량은 (a) 열 가소성 수지 100 질량부에 대하여 50 내지 250 질량부인 것이 바람직하고, 60 내지 150 질량부인 것이 보다 바람직하다. 상기 배합량이 50 질량부 미만이면 경화 후에 충분한 내열성이 얻어지기 어려운 경향이 있고, 또한 250 질량부를 초과하면, 필름으로서 사용하는 경우에 양호한 필름 형성성이 얻어지기 어려운 경향이 있다. It is preferable that the compounding quantity of the (b) radically polymerizable compound except the compound corresponding to the above-mentioned phosphoric acid group containing vinyl compound is 50-250 mass parts with respect to 100 mass parts of (a) thermoplastic resin, and it is more preferable that it is 60-150 mass parts. Do. When the said compounding quantity is less than 50 mass parts, there exists a tendency for sufficient heat resistance after hardening to be difficult to be obtained, and when it exceeds 250 mass parts, when using as a film, favorable film formability tends to be difficult to be obtained.

본 실시 형태의 접착제 조성물은 (b) 라디칼 중합성 화합물로서 임계 표면 장력이 25 내지 40 mN/m인 우레탄(메트)아크릴레이트 및 하기 화학식 (A)로 표시되는 우레탄(메트)아크릴레이트의 한쪽 또는 양쪽의 조건을 만족시키는 우레탄(메트)아크릴레이트를 필수 성분으로서 함유한다. 이 중, 본 실시 형태에서는, 상기 조건을 만족시키는 우레탄아크릴레이트가 보다 바람직하게 이용된다. 여기서, 하기 화학식 (A)로 표시되는 우레탄(메트)아크릴레이트는 지방족계 디이소시아네이트 및 폴리에스테르디올의 축합 반응에 의해 얻을 수 있다. The adhesive composition of this embodiment is (b) a urethane (meth) acrylate having a critical surface tension of 25 to 40 mN / m as the radical polymerizable compound, and one of the urethane (meth) acrylates represented by the following general formula (A) or Urethane (meth) acrylate which satisfies both conditions is contained as an essential component. Among these, in this embodiment, urethane acrylate which satisfy | fills the said conditions is used more preferably. Here, the urethane (meth) acrylate represented by the following general formula (A) can be obtained by condensation reaction of aliphatic diisocyanate and polyesterdiol.

Figure pat00029
Figure pat00029

[화학식 (A) 중, R1 및 R2는 각각 독립적으로 수소 원자 또는 메틸기를 나타내고, R3은 에틸렌기, 프로필렌기, ε-카프로락톤의 개환 화합물로부터 유도되는 기, 또는 하기 화학식 (B)로 표시되는 기를 나타내고, R4는 하기 화학식 (B)로 표시되는 기를 나타내고, R5는 포화 지방족기 또는 포화 지환식기를 나타내고, a는 1 내지 40의 정수를 나타냄][In Formula (A), R <1> and R <2> represents a hydrogen atom or a methyl group each independently, R <3> is group derived from the ring-opening compound of ethylene group, a propylene group, (epsilon) -caprolactone, or following formula (B) Represents a group represented by R 4 represents a group represented by the following formula (B), R 5 represents a saturated aliphatic group or a saturated alicyclic group, and a represents an integer of 1 to 40.]

Figure pat00030
Figure pat00030

[화학식 (B) 중, R6 및 R7은 각각 독립적으로 탄소수 2 내지 12의 직쇄 또는 분지쇄의 알킬렌기를 나타내고, b는 1 내지 10의 정수를 나타내고, c는 1 내지 25의 정수를 나타내며, 식 중, R6끼리, R7끼리, b끼리 및 c끼리는 각각 동일하거나 상이할 수도 있음][In formula (B), R <6> and R <7> respectively independently represents the C2-C12 linear or branched alkylene group, b represents the integer of 1-10, c represents the integer of 1-25. , Wherein, R 6 , R 7 , b and c may be the same or different.

상기 우레탄(메트)아크릴레이트를 구성하는 지방족계 디이소시아네이트는, 테트라메틸렌디이소시아네이트, 헥사메틸렌디이소시아네이트, 리신디이소시아네이트, 2-메틸펜탄-1,5-디이소시아네이트, 3-메틸펜탄-1,5-디이소시아네이트, 2,2,4-트리메틸헥사메틸렌-1,6-디이소시아네이트, 2,4,4-트리메틸헥사메틸렌-1,6-디이소시아네이트, 이소포론디이소시아네이트, 시클로헥실디이소시아네이트, 수소 첨가 크실릴렌디이소시아네이트, 수소 첨가 디페닐메탄디이소시아네이트, 수소 첨가 트리메틸크실릴렌디이소시아네이트 등으로부터 선택된다. The aliphatic diisocyanate constituting the urethane (meth) acrylate is tetramethylene diisocyanate, hexamethylene diisocyanate, lysine diisocyanate, 2-methylpentane-1,5-diisocyanate, 3-methylpentane-1,5 -Diisocyanate, 2,2,4-trimethylhexamethylene-1,6-diisocyanate, 2,4,4-trimethylhexamethylene-1,6-diisocyanate, isophorone diisocyanate, cyclohexyl diisocyanate, hydrogenated Xylylene diisocyanate, hydrogenated diphenylmethane diisocyanate, hydrogenated trimethyl xylylene diisocyanate, etc. are chosen.

또한, 상기 우레탄(메트)아크릴레이트를 구성하는 폴리에스테르디올로서는, 예를 들면 지방족계 폴리에스테르디올이나 방향족계 폴리에스테르디올을 사용할 수 있고, 지방족계 폴리에스테르디올을 이용하는 것이 바람직하다. 지방족계 폴리에스테르디올은, 에틸렌글리콜, 프로필렌글리콜, 1,2-프로판디올, 1,3-프로판디올, 1,3-부탄디올, 1,4-부탄디올, 네오펜틸글리콜, 1,2-펜탄디올, 1,4-펜탄디올, 1,5-펜탄디올, 2,4-펜탄디올, 2-메틸-2,4-펜탄디올, 2,4-디메틸-2,4-펜탄디올, 2,2,4-트리메틸-1,3-펜탄디올, 1,2-헥산디올, 1,5-헥산디올, 1,6-헥산디올, 2,5-헥산디올, 2-에틸-1,3-헥산디올, 2,5-디메틸-2,5-헥산디올, 1,2-옥탄디올, 1,8-옥탄디올, 1,7-헵탄디올, 1,9-노난디올, 1,2-데칸디올, 1,10-데칸디올, 1,12-데칸디올, 도데칸디올, 피나콜, 1,4-부틴디올, 트리에틸렌글리콜, 디에틸렌글리콜, 디프로필렌글리콜, 시클로헥산디메탄올 등의 포화된 저분자 글리콜류, 적어도 1종 이상의 상기 글리콜류와 포스겐과의 반응에 의해서 얻어지는 폴리카보네이트디올류, 적어도 1종 이상의 상기 글리콜류를 개시제로 하여 에틸렌옥사이드, 프로필렌옥시드, 에피클로로히드린 등의 단량체의 1종 또는 그 이상을 공지된 방법에 의해 부가 중합함으로써 얻어지는 폴리에테르디올 등의 디올류와, 아디프산, 3-메틸아디프산, 2,2,5,5-테트라메틸아디프산, 말레산, 푸마르산, 숙신산, 2,2-디메틸숙신산, 2-에틸-2-메틸숙신산, 2,3-디메틸숙신산, 옥살산, 말론산, 메틸말론산, 에틸말론산, 부틸말론산, 디메틸말론산, 글루타르산, 2-메틸글루타르산, 3-메틸글루타르산, 2,2-디메틸글루타르산, 3,3-디메틸글루타르산, 2,4-디메틸글루타르산, 피멜산, 수베르산, 아젤라산, 세박산 등의 이염기산 또는 이들에 대응하는 산무수물을 탈수 축합시켜 얻어지는 지방족계 폴리에스테르디올류나, ε-카프로락톤 등의 환상 에스테르 화합물을 개환 중합하여 얻어지는 지방족계 폴리에스테르계 디올류로부터 선택된다. 상기 디올류 및 디카르복실산으로부터 얻어지는 폴리에스테르디올류는 단독으로 이용하는 외에, 2종 이상의 폴리에스테르디올류를 혼합하여 이용할 수도 있다. As the polyester diol constituting the urethane (meth) acrylate, for example, an aliphatic polyester diol or an aromatic polyester diol can be used, and it is preferable to use an aliphatic polyester diol. Aliphatic polyester diols are ethylene glycol, propylene glycol, 1,2-propanediol, 1,3-propanediol, 1,3-butanediol, 1,4-butanediol, neopentylglycol, 1,2-pentanediol, 1,4-pentanediol, 1,5-pentanediol, 2,4-pentanediol, 2-methyl-2,4-pentanediol, 2,4-dimethyl-2,4-pentanediol, 2,2,4 -Trimethyl-1,3-pentanediol, 1,2-hexanediol, 1,5-hexanediol, 1,6-hexanediol, 2,5-hexanediol, 2-ethyl-1,3-hexanediol, 2 , 5-dimethyl-2,5-hexanediol, 1,2-octanediol, 1,8-octanediol, 1,7-heptanediol, 1,9-nonanediol, 1,2-decanediol, 1,10 Saturated low molecular glycols such as -decanediol, 1,12-decanediol, dodecanediol, pinacol, 1,4-butynediol, triethylene glycol, diethylene glycol, dipropylene glycol, cyclohexanedimethanol, at least Polycarbonate diols obtained by the reaction of at least one of the above glycols and phosgene, and at least one of the above glycols as an initiator Diols such as polyetherdiol obtained by addition polymerization of one or more monomers such as ethylene oxide, propylene oxide and epichlorohydrin by a known method, adipic acid, 3-methyladipic acid, 2,2,5,5-tetramethyladipic acid, maleic acid, fumaric acid, succinic acid, 2,2-dimethylsuccinic acid, 2-ethyl-2-methylsuccinic acid, 2,3-dimethylsuccinic acid, oxalic acid, malonic acid, methyl Malonic acid, ethyl malonic acid, butyl malonic acid, dimethyl malonic acid, glutaric acid, 2-methyl glutaric acid, 3-methyl glutaric acid, 2,2-dimethyl glutaric acid, 3,3-dimethyl glutaric acid , Aliphatic polyester diols obtained by dehydrating and condensing dibasic acids such as 2,4-dimethylglutaric acid, pimelic acid, subic acid, azelaic acid, and sebacic acid or their corresponding anhydrides, ε-caprolactone, and the like From aliphatic polyester diols obtained by ring-opening polymerization of a cyclic ester compound of Is selected. Polyester diols obtained from the diols and dicarboxylic acids may be used alone or in combination of two or more polyester diols.

또한, 본 실시 형태의 접착제 조성물에 있어서는, PET, PC, PEN 등의 기재에 대한 접착 강도 향상의 관점에서 상기 우레탄(메트)아크릴레이트의 중량 평균 분자량은 8000 이상 25000 미만의 범위 내로 자유롭게 조정하여, 바람직하게 사용할 수 있다. 상기 우레탄(메트)아크릴레이트의 중량 평균 분자량이 상기 범위 내이면 유연성과 응집력의 둘다를 얻을 수 있어, PET, PC, PEN 등의 유기 기재와의 접착 강도가 향상하여, 우수한 접속 신뢰성을 얻을 수 있다. 또한, 이러한 효과를 보다 충분히 얻는 관점에서, 상기 우레탄(메트)아크릴레이트의 중량 평균 분자량은 10000 이상 25000 미만인 것이 보다 바람직하다. 또한, 이 중량 평균 분자량이 8000 미만인 경우, 충분한 가요성이 얻어지지 않는 경향이 있고, 25000 이상이면, 접착제 조성물의 유동성이 저하되는 경향이 있다. Moreover, in the adhesive composition of this embodiment, the weight average molecular weight of the said urethane (meth) acrylate is adjusted freely in the range of 8000 or more and less than 25000 from a viewpoint of the adhesive strength improvement with respect to base materials, such as PET, PC, and PEN, It can be used preferably. If the weight average molecular weight of the said urethane (meth) acrylate is in the said range, both flexibility and cohesion force can be obtained, adhesive strength with organic substrates, such as PET, PC, and PEN, will improve, and excellent connection reliability can be obtained. . Moreover, from a viewpoint of fully obtaining such an effect, it is more preferable that the weight average molecular weights of the said urethane (meth) acrylate are 10000 or more and less than 25000. Moreover, when this weight average molecular weight is less than 8000, there exists a tendency for sufficient flexibility not to be obtained, and when it is 25000 or more, there exists a tendency for the fluidity | liquidity of an adhesive composition to fall.

상기 우레탄(메트)아크릴레이트의 임계 표면 장력은 25 내지 40 mN/m인 것이 바람직하고, 25 내지 35 mN/m인 것이 보다 바람직하다. 우레탄(메트)아크릴레이트의 임계 표면 장력이 25 내지 40 mN/m인 경우, 피착체인 PET, PC, PEN의 임계 표면 장력과 가깝게 되어 습윤성이 향상함으로써 접착 강도가 향상하여 우수한 접속 신뢰성을 얻을 수 있다. 또한, 이 임계 표면 장력이 25 mN/m 미만 또는 40 mN/m을 초과하면 PET, PC, PEN 등에 대한 습윤성의 저하나 상용성이 악화할 우려가 있다. 상기 우레탄(메트)아크릴레이트의 임계 표면 장력은 우레탄 결합 당량에 관계하여, 디올의 수 평균 분자량을 변화시킴으로써 조정할 수 있다고 생각된다. 예를 들면, 디올의 수 평균 분자량을 크게 하면 우레탄 결합 당량이 감소하여, 임계 표면 장력이 저하되는 경향이 있다. It is preferable that it is 25-40 mN / m, and, as for the critical surface tension of the said urethane (meth) acrylate, it is more preferable that it is 25-35 mN / m. When the critical surface tension of the urethane (meth) acrylate is 25 to 40 mN / m, it is close to the critical surface tension of PET, PC, and PEN as the adherend, and the wettability is improved, thereby improving the adhesive strength and obtaining excellent connection reliability. . Moreover, when this critical surface tension exceeds 25 mN / m or exceeds 40 mN / m, there exists a possibility that the wettability or compatibility with PET, PC, PEN, etc. may deteriorate. It is thought that the critical surface tension of the urethane (meth) acrylate can be adjusted by changing the number average molecular weight of the diol in relation to the urethane bond equivalent. For example, when the number average molecular weight of the diol is increased, the urethane bond equivalents tend to decrease, and the critical surface tension tends to decrease.

또한, 상기 우레탄(메트)아크릴레이트의 배합량은 접착제 조성물 전량을 기준으로 하여 5 내지 95 질량%인 것이 바람직하고, 10 내지 80 질량%인 것이 보다 바람직하다. 배합량이 5 질량% 미만인 경우, 내열성이 저하되기 쉬운 경향이 있고, 95 질량%를 초과하면 필름으로서 사용하는 경우에 필름 형성성이 저하되기 쉬운 경향이 있다. Moreover, it is preferable that it is 5-95 mass% on the basis of the adhesive composition whole quantity, and, as for the compounding quantity of the said urethane (meth) acrylate, it is more preferable that it is 10-80 mass%. When the compounding quantity is less than 5 mass%, there exists a tendency for heat resistance to fall easily, and when it exceeds 95 mass%, there exists a tendency for film formability to fall easily when using as a film.

본 실시 형태의 접착제 조성물에 함유되는 (c) 라디칼 중합 개시제로서는, 종래부터 알려져 있는 유기 과산화물이나 아조 화합물 등, 외부로부터의 에너지의 부여에 의해 라디칼을 발생하는 화합물을 사용할 수 있다. (c) 라디칼 중합 개시제로서는, 안정성, 반응성, 상용성의 관점에서 1분간 반감기 온도가 90 내지 175℃이고, 또한 분자량이 180 내지 1,000인 유기 과산화물이 바람직하다. 1분간 반감기 온도가 이 범위에 있는 것에 의해 저장 안정성이 우수하고, 라디칼 중합성도 충분히 높아, 단시간에 경화할 수 있다. As a (c) radical polymerization initiator contained in the adhesive composition of this embodiment, the compound which generate | occur | produces a radical by provision of energy from the exterior, such as a conventionally known organic peroxide and an azo compound, can be used. As the (c) radical polymerization initiator, an organic peroxide having a half-life temperature of 90 to 175 ° C and a molecular weight of 180 to 1,000 is preferable from the viewpoint of stability, reactivity and compatibility. When the half-life temperature is in this range for 1 minute, the storage stability is excellent, the radical polymerizability is sufficiently high, and the curing can be performed in a short time.

(c) 라디칼 중합 개시제로서는, 구체적으로는 1,1,3,3-테트라메틸부틸퍼옥시네오데카노에이트, 디(4-t-부틸시클로헥실)퍼옥시디카보네이트, 디(2-에틸헥실)퍼옥시디카보네이트, 쿠밀퍼옥시네오데카노에이트, 1,1,3,3-테트라메틸부틸퍼옥시네오데카노에이트, 디라우로일퍼옥시드, 1-시클로헥실-1-메틸에틸퍼옥시네오데카노에이트, t-헥실퍼옥시네오데카노에이트, t-부틸퍼옥시네오데카노에이트, t-부틸퍼옥시피발레이트, 1,1,3,3-테트라메틸부틸퍼옥시-2-에틸헥사노에이트, 2,5-디메틸-2,5-디(2-에틸헥사노일퍼옥시)헥산, t-헥실퍼옥시-2-에틸헥사노에이트, t-부틸퍼옥시-2-에틸헥사노에이트, t-부틸퍼옥시네오헵타노에이트, t-아밀퍼옥시-2-에틸헥사노에이트, 디-t-부틸퍼옥시헥사히드로테레프탈레이트, t-아밀퍼옥시-3,5,5-트리메틸헥사노에이트, 3-히드록시-1,1-디메틸부틸퍼옥시네오데카노에이트, 1,1,3,3-테트라메틸부틸퍼옥시-2-에틸헥사노에이트, t-아밀퍼옥시네오데카노에이트, t-아밀퍼옥시-2-에틸헥사노에이트, 디(3-메틸벤조일)퍼옥시드, 디벤조일퍼옥시드, 디(4-메틸벤조일)퍼옥시드, t-헥실퍼옥시이소프로필모노카보네이트, t-부틸퍼옥시말레산, t-부틸퍼옥시-3,5,5-트리메틸헥사노에이트, t-부틸퍼옥시라우레이트, 2,5-디메틸-2,5-디(3-메틸벤조일퍼옥시)헥산, t-부틸퍼옥시-2-에틸헥실모노카보네이트, t-헥실퍼옥시벤조에이트, 2,5-디메틸-2,5-디(벤조일퍼옥시)헥산, t-부틸퍼옥시벤조에이트, 디부틸퍼옥시트리메틸아디페이트, t-아밀퍼옥시노르말옥토에이트, t-아밀퍼옥시이소노나노에이트, t-아밀퍼옥시벤조에이트 등의 유기 과산화물; 2,2'-아조비스-2,4-디메틸발레로니트릴, 1,1'-아조비스(1-아세톡시-1-페닐에탄), 2,2'-아조비스이소부티로니트릴, 2,2'-아조비스(2-메틸부티로니트릴), 디메틸-2,2'-아조비스이소부티로니트릴, 4,4'-아조비스(4-시아노발레르산), 1,1'-아조비스(1-시클로헥산카르보니트릴) 등의 아조 화합물 등을 들 수 있다.(c) As a radical polymerization initiator, 1,1,3,3- tetramethylbutyl peroxy neodecanoate, di (4-t-butylcyclohexyl) peroxydicarbonate, and di (2-ethylhexyl) are specifically, mentioned. Peroxydicarbonate, cumylperoxy neodecanoate, 1,1,3,3-tetramethylbutylperoxy neodecanoate, dilauroyl peroxide, 1-cyclohexyl-1-methylethylperoxy neode Decanoate, t-hexyl peroxy neodecanoate, t-butyl peroxy neodecanoate, t-butyl peroxy pivalate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexano Acetate, 2,5-dimethyl-2,5-di (2-ethylhexanoylperoxy) hexane, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxy neoheptanoate, t-amylperoxy-2-ethylhexanoate, di-t-butylperoxyhexahydroterephthalate, t-amylperoxy-3,5,5-trimethylhexano 8, 3-hydroxy-1,1-dimeth Butylbutyl peroxy neodecanoate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, t-amylperoxy neodecanoate, t-amylperoxy-2-ethylhexa Noate, di (3-methylbenzoyl) peroxide, dibenzoylperoxide, di (4-methylbenzoyl) peroxide, t-hexylperoxyisopropylmonocarbonate, t-butylperoxymaleic acid, t-butylper Oxy-3,5,5-trimethylhexanoate, t-butylperoxylaurate, 2,5-dimethyl-2,5-di (3-methylbenzoylperoxy) hexane, t-butylperoxy-2- Ethylhexyl monocarbonate, t-hexyl peroxybenzoate, 2,5-dimethyl-2,5-di (benzoylperoxy) hexane, t-butylperoxybenzoate, dibutylperoxytrimethyl adipate, t-amyl Organic peroxides such as peroxy normal octoate, t-amyl peroxy isononanoate and t-amyl peroxy benzoate; 2,2'-azobis-2,4-dimethylvaleronitrile, 1,1'-azobis (1-acetoxy-1-phenylethane), 2,2'-azobisisobutyronitrile, 2, 2'-azobis (2-methylbutyronitrile), dimethyl-2,2'-azobisisobutyronitrile, 4,4'-azobis (4-cyanovaleric acid), 1,1'-azo Azo compounds, such as bis (1-cyclohexanecarbonitrile), etc. are mentioned.

이들 화합물은 단독으로 이용하는 외에, 2종 이상의 화합물을 혼합하여 이용할 수도 있다. These compounds may be used alone or in combination of two or more compounds.

또한, (c) 라디칼 중합 개시제로서는, 150 내지 750 nm의 광 조사에 의해 라디칼을 발생하는 화합물을 사용할 수 있다. 이러한 화합물로서는, 예를 들면 ㅁ무문헌 [Photoinitiation, Photopolymerization, and Photocuring, J. -P. Fouassier, Hanser Publishers(1995년, p17 내지 p35)]에 기재되어 있는 α-아세트아미노페논 유도체나 포스핀옥시드 유도체가 광 조사에 대한 감도가 높기 때문에 보다 바람직하다. In addition, as the (c) radical polymerization initiator, a compound which generates a radical by light irradiation of 150 to 750 nm can be used. As such a compound, for example, Photoinitiation, Photopolymerization, and Photocuring, J.-P. [Alpha] -acetaminophenone derivatives or phosphine oxide derivatives described in Fouassier, Hanser Publishers (1995, p17 to p35) are more preferred because of their high sensitivity to light irradiation.

이들 화합물은 단독으로 이용하는 외에, 상기 유기 과산화물이나 아조 화합물과 혼합하여 이용할 수도 있다. These compounds may be used alone or in combination with the above organic peroxides and azo compounds.

상기 (c) 라디칼 중합 개시제의 배합량은 (a) 열 가소성 수지 100 질량부에 대하여 0.1 내지 500 질량부가 바람직하고, 1 내지 300 질량부가 보다 바람직하고, 5 내지 50 질량부가 더욱 바람직하고, 10 내지 30 질량부가 특히 바람직하다. (c) 라디칼 중합 개시제의 배합량이 0.1 질량부 미만이면 접착제 조성물이 충분히 경화하기 어려워지는 경향이 있고, 500 질량부를 초과하면 저장 안정성이 악화하는 경향이 있다. 0.1-500 mass parts is preferable with respect to 100 mass parts of (a) thermoplastic resins, As for the compounding quantity of the said (c) radical polymerization initiator, 1-300 mass parts is more preferable, 5-50 mass parts is still more preferable, 10-30 Part by mass is particularly preferred. (c) When the compounding quantity of a radical polymerization initiator is less than 0.1 mass part, it will become difficult to fully harden an adhesive composition, and when it exceeds 500 mass parts, there exists a tendency for storage stability to deteriorate.

본 실시 형태의 접착제 조성물에 함유되는 (d) 도전성 입자는 그의 전체 또는 표면에 도전성을 갖는 입자이면 되지만, 접속 단자를 갖는 회로 부재의 접속에 사용하는 경우에는, 접속 단자간 거리보다 평균 입경이 작은 것이 바람직하다.Although (d) electroconductive particle contained in the adhesive composition of this embodiment should just be the particle | grains which have electroconductivity in the whole or the surface, when using for the connection of the circuit member which has a connection terminal, the average particle diameter is smaller than the distance between connection terminals. It is preferable.

(d) 도전성 입자로서는, Au, Ag, Ni, Cu, 땜납 등의 금속 입자나 카본 등을 들 수 있다. 또한, 비도전성의 유리, 세라믹, 플라스틱 등을 핵으로 하고, 이 핵에 상기 금속, 금속 입자나 카본을 피복한 것일 수도 있다. (d) 도전성 입자가 플라스틱을 핵으로 하고, 이 핵에 상기 금속, 금속 입자나 카본을 피복한 것이나 열용융 금속 입자의 경우, 가열 가압에 의해 변형성을 갖기 때문에 접속시에 전극과의 접촉 면적이 증가하여 신뢰성이 향상하기 때문에 바람직하다. (d) As electroconductive particle, metal particles, such as Au, Ag, Ni, Cu, a solder, carbon etc. are mentioned. It is also possible to use a non-conductive glass, ceramic, plastic, or the like as a nucleus and coating the nucleus with the metal, metal particles, or carbon. (d) In the case where the conductive particles are made of plastic as a nucleus, and the nucleus is coated with the metal, metal particles or carbon, or in the case of hot-melt metal particles, they are deformable by heating and pressing, so that the contact area with the electrode at the time of connection is reduced. It is preferable because it increases and reliability improves.

또한, 이들 (d) 도전성 입자의 표면을 고분자 수지 등으로 더 피복한 미립자는, 도전성 입자의 배합량을 증가시킨 경우의 입자끼리의 접촉에 의한 단락을 억제하여, 전극 회로 사이의 절연성을 향상할 수 있다는 점에서, 적절하게 이것을 단독 또는 (d) 도전성 입자와 혼합하여 이용할 수도 있다. Moreover, the microparticles | fine-particles which further coat | covered the surface of these (d) electroconductive particle with a polymer resin etc. can suppress the short circuit by the contact of the particles when the compounding quantity of electroconductive particle is increased, and can improve the insulation between electrode circuits. Since it exists, it can also be used individually or in mixture with (d) electroconductive particle suitably.

이 (d) 도전성 입자의 평균 입경은 분산성, 도전성 면에서 1 내지 18 ㎛인 것이 바람직하다. 이러한 (d) 도전성 입자를 함유하는 경우, 접착제 조성물은 이방 도전성 접착제로서 바람직하게 사용할 수 있다. It is preferable that the average particle diameter of this (d) electroconductive particle is 1-18 micrometers from a dispersible and electroconductive point. When it contains such (d) electroconductive particle, an adhesive composition can be used suitably as an anisotropically conductive adhesive agent.

(d) 도전성 입자의 사용량은 특별히 제한은 받지 않지만, 접착제 조성물 전체 부피에 대하여 0.1 내지 30 부피%로 하는 것이 바람직하고, 0.1 내지 10 부피%로 하는 것이 보다 바람직하다. 이 값이 0.1 부피% 미만이면 도전성이 낮아지는 경향이 있고, 30 부피%를 초과하면 회로의 단락이 생기기 쉬워지는 경향이 있다. 또한, 부피%는 23℃의 경화 전의 각 성분의 부피를 바탕으로 결정되는데, 각 성분의 부피는 비중을 이용하여 중량으로부터 부피로 환산할 수 있다. 또한, 메스실린더 등에 그 성분을 용해하거나 팽윤시키거나 하지 않고, 그 성분을 잘 습윤시키는 적당한 용매(물, 알코올 등)를 넣은 것에 그 성분을 투입하여 증가한 부피를 그 성분의 부피로서 구할 수도 있다. (d) Although the usage-amount of electroconductive particle is not specifically limited, It is preferable to set it as 0.1-30 volume% with respect to the whole volume of adhesive composition, and it is more preferable to set it as 0.1-10 volume%. If this value is less than 0.1 volume%, there exists a tendency for electroconductivity to become low, and when it exceeds 30 volume%, there exists a tendency for a short circuit to occur easily. In addition, although the volume% is determined based on the volume of each component before hardening at 23 degreeC, the volume of each component can be converted from volume to volume using specific gravity. In addition, the volume of the component may be obtained as the volume of the component by adding the appropriate component (water, alcohol, or the like) into a measuring cylinder or the like without dissolving or swelling the component.

또한, 본 실시 형태의 접착제 조성물에는 경화 속도의 제어나 저장 안정성을 부여하기 위해서 안정화제를 첨가할 수 있다. 이러한 안정화제로서는, 특별히 제한없이 공지된 화합물을 사용할 수 있는데, 벤조퀴논이나 히드로퀴논 등의 퀴논 유도체; 4-메톡시페놀이나 4-t-부틸카테콜 등의 페놀 유도체; 2,2,6,6-테트라메틸피페리딘-1-옥실이나 4-히드록시-2,2,6,6-테트라메틸피페리딘-1-옥실 등의 아미녹실 유도체; 테트라메틸피페리딜메타크릴레이트 등의 힌더드 아민 유도체 등이 바람직하다. In addition, a stabilizer can be added to the adhesive composition of this embodiment in order to provide control of a curing rate, or to provide storage stability. As such a stabilizer, a well-known compound can be used without a restriction | limiting in particular, Quinone derivatives, such as benzoquinone and hydroquinone; Phenol derivatives such as 4-methoxy phenol and 4-t-butyl catechol; Aminoxyl derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl; Hindered amine derivatives, such as tetramethyl piperidyl methacrylate, are preferable.

안정화제의 배합량은 접착제 조성물 100 질량부에 대하여 0.01 내지 30 질량부가 바람직하고, 0.05 내지 10 질량부가 보다 바람직하다. 배합량이 0.01 질량부 미만인 경우, 경화 속도의 제어나 저장 안정성이 부여되기 어려워지고, 30 질량부를 초과하는 경우에는, 다른 성분과의 상용성에 악영향을 미치기 쉬워진다. 0.01-30 mass parts is preferable with respect to 100 mass parts of adhesive compositions, and, as for the compounding quantity of a stabilizer, 0.05-10 mass parts is more preferable. When the compounding amount is less than 0.01 part by mass, it is difficult to impart control or storage stability of the curing rate, and when it exceeds 30 parts by mass, it is easy to adversely affect the compatibility with other components.

또한, 본 실시 형태의 접착제 조성물에는 알콕시실란 유도체나 실라잔 유도체로 대표되는 커플링제, 밀착 향상제 및 레벨링제 등의 접착 보조제를 적절하게 첨가할 수도 있다. 커플링제로서 구체적으로는 하기 화학식 (R)로 표시되는 화합물이 바람직하고, 단독으로 이용하는 외에, 2종 이상의 화합물을 혼합하여 이용할 수도 있다. Moreover, you may add suitably adhesion | attachment adjuvant, such as a coupling agent represented by an alkoxysilane derivative and a silazane derivative, an adhesion promoter and a leveling agent, to the adhesive composition of this embodiment. Specifically as a coupling agent, the compound represented by following General formula (R) is preferable, In addition to using independently, you may mix and use 2 or more types of compounds.

Figure pat00031
Figure pat00031

[화학식 (R) 중, R27, R28 및 R29는 각각 독립적으로, 수소 원자, 탄소수 1 내지 5의 알킬기, 탄소수 1 내지 5의 알콕시기, 탄소수 1 내지 5의 알콕시카르보닐기 또는 아릴기를 나타내고, R30은 (메트)아크릴로일기, 비닐기, 이소시아네이트기, 이미다졸기, 머캅토기, 아미노기, 메틸아미노기, 디메틸아미노기, 벤질아미노기, 페닐아미노기, 시클로헥실아미노기, 모르폴리노기, 피페라지노기, 우레이도기 또는 글리시딜기를 나타내고, t는 1 내지 10의 정수를 나타냄][In formula (R), R <27> , R <28> and R <29> respectively independently represent a hydrogen atom, a C1-C5 alkyl group, a C1-C5 alkoxy group, a C1-C5 alkoxycarbonyl group, or an aryl group, R 30 is a (meth) acryloyl group, vinyl group, isocyanate group, imidazole group, mercapto group, amino group, methylamino group, dimethylamino group, benzylamino group, phenylamino group, cyclohexylamino group, morpholino group, piperazino group, urea Earthenware or glycidyl group, and t represents an integer of 1 to 10]

본 실시 형태의 접착제 조성물은 응력 완화 및 접착성 향상을 목적으로 고무 성분을 병용할 수도 있다. 고무 성분이란, 그대로의 상태에서 고무 탄성(JIS K6200)을 나타내는 성분 또는 반응에 의해 고무 탄성을 나타내는 성분을 말한다. 고무 성분은 실온(25℃)에서 고형이거나 액상일 수도 있는데, 유동성 향상의 관점에서 액상인 것이 바람직하다. 고무 성분으로서는 폴리부타디엔 골격을 갖는 화합물이 바람직하다. 고무 성분은 시아노기, 카르복실기, 수산기, (메트)아크릴로일기 또는 모르폴린기를 가질 수도 있다. 또한, 접착성 향상의 관점에서 고극성기인 시아노기, 카르복실기를 측쇄 또는 말단에 포함하는 고무 성분이 바람직하다. 또한, 폴리부타디엔 골격을 갖고 있더라도, 열 가소성을 나타내는 경우에는 (a) 열 가소성 수지로 분류하고, 라디칼 중합성을 나타내는 경우에는 (b) 라디칼 중합성 화합물로 분류한다. The adhesive composition of this embodiment can also use a rubber component together for the purpose of stress relaxation and an adhesive improvement. The rubber component refers to a component exhibiting rubber elasticity (JIS K6200) or a component exhibiting rubber elasticity by reaction under the same condition. The rubber component may be solid or liquid at room temperature (25 ° C.), but is preferably liquid in view of fluidity improvement. As the rubber component, a compound having a polybutadiene skeleton is preferable. The rubber component may have a cyano group, a carboxyl group, a hydroxyl group, a (meth) acryloyl group or a morpholine group. Moreover, the rubber component which contains the cyano group and carboxyl group which are high polar groups in a side chain or the terminal from a viewpoint of adhesive improvement is preferable. Moreover, even if it has polybutadiene frame | skeleton, when it shows thermoplasticity, it classifies as (a) thermoplastic resin, and when it shows radically polymerizable, it classifies as (b) radically polymerizable compound.

고무 성분으로서 구체적으로는 폴리이소프렌, 폴리부타디엔, 카르복실기 말단 폴리부타디엔, 수산기 말단 폴리부타디엔, 1,2-폴리부타디엔, 카르복실기 말단 1,2-폴리부타디엔, 수산기 말단 1,2-폴리부타디엔, 아크릴 고무, 스티렌-부타디엔 고무, 수산기 말단 스티렌-부타디엔 고무, 아크릴로니트릴-부타디엔 고무, 카르복실기, 수산기, (메트)아크릴로일기 또는 모르폴린기를 중합체 말단에 함유하는 아크릴로니트릴-부타디엔 고무, 카르복실화니트릴 고무, 수산기 말단 폴리(옥시프로필렌), 알콕시실릴기 말단 폴리(옥시프로필렌), 폴리(옥시테트라메틸렌)글리콜, 폴리올레핀글리콜 등을 들 수 있다. Specific examples of the rubber component include polyisoprene, polybutadiene, carboxyl terminal polybutadiene, hydroxyl terminal polybutadiene, 1,2-polybutadiene, carboxyl terminal 1,2-polybutadiene, hydroxyl terminal 1,2-polybutadiene, acrylic rubber, Styrene-butadiene rubber, hydroxyl group terminal Styrene-butadiene rubber, acrylonitrile-butadiene rubber, carboxyl group, hydroxyl group, (meth) acryloyl group or acrylonitrile-butadiene rubber containing a (meth) acryloyl group or morpholine group at the polymer terminal, carboxylated nitrile rubber And hydroxyl group terminated poly (oxypropylene), alkoxysilyl group terminated poly (oxypropylene), poly (oxytetramethylene) glycol, polyolefin glycol and the like.

또한, 상기 고극성기를 갖고, 실온에서 액상인 고무 성분으로서는 구체적으로는 액상 아크릴로니트릴-부타디엔 고무, 카르복실기, 수산기, (메트)아크릴로일기 또는 모르폴린기를 중합체 말단에 함유하는 액상 아크릴로니트릴-부타디엔 고무, 액상 카르복실화니트릴 고무 등을 들 수 있으며, 극성기인 아크릴로니트릴 함유량은 10 내지 60 질량%가 바람직하다. Moreover, as a rubber component which has the said high polar group and is liquid at room temperature, Specifically, the liquid acrylonitrile- which contains a liquid acrylonitrile- butadiene rubber, a carboxyl group, a hydroxyl group, a (meth) acryloyl group, or a morpholine group at a polymer terminal- Butadiene rubber, liquid carboxylated nitrile rubber, etc. are mentioned, As for the acrylonitrile content which is a polar group, 10-60 mass% is preferable.

이들 화합물은 단독으로 이용하는 외에, 2종 이상의 화합물을 혼합하여 이용할 수도 있다. These compounds may be used alone or in combination of two or more compounds.

또한, 본 실시 형태의 접착제 조성물에는 응력 완화 및 접착성 향상을 목적으로 유기 미립자를 첨가할 수도 있다. 유기 미립자의 평균 입경은 0.05 내지 1.0 ㎛가 바람직하다. 또한, 유기 미립자가 상술한 고무 성분으로 이루어지는 경우에는 유기 미립자가 아니라 고무 성분으로 분류하고, 유기 미립자가 상술한 (a) 열 가소성 수지로 이루어지는 경우에는 유기 미립자가 아니라 (a) 열 가소성 수지로 분류한다. Moreover, organic fine particles can also be added to the adhesive composition of this embodiment for the purpose of stress relaxation and an adhesive improvement. The average particle diameter of the organic fine particles is preferably 0.05 to 1.0 m. In addition, when organic fine particles consist of the above-mentioned rubber component, it classifies not as organic microparticles but as rubber component, and when organic microparticles | fine-particles consist of the above-mentioned (a) thermoplastic resin, it classifies as (a) thermoplastic resin, not organic fine particles. do.

유기 미립자로서 구체적으로는 폴리이소프렌, 폴리부타디엔, 카르복실기 말단 폴리부타디엔, 수산기 말단 폴리부타디엔, 1,2-폴리부타디엔, 카르복실기 말단 1,2-폴리부타디엔, 아크릴 고무, 스티렌-부타디엔 고무, 아크릴로니트릴-부타디엔 고무, 카르복실기, 수산기, (메트)아크릴로일기 또는 모르폴린기를 중합체 말단에 함유하는 아크릴로니트릴-부타디엔 고무, 카르복실화니트릴 고무, 수산기 말단 폴리(옥시프로필렌), 알콕시실릴기 말단 폴리(옥시프로필렌), 폴리(옥시테트라메틸렌)글리콜, 폴리올레핀글리콜(메트)아크릴산알킬-부타디엔-스티렌 공중합체, (메트)아크릴산알킬-실리콘 공중합체 또는 실리콘(메트)-아크릴 공중합체 또는 복합체로 이루어지는 유기 미립자를 들 수 있다. Specific examples of the organic fine particles include polyisoprene, polybutadiene, carboxyl terminal polybutadiene, hydroxyl terminal polybutadiene, 1,2-polybutadiene, carboxyl terminal 1,2-polybutadiene, acrylic rubber, styrene-butadiene rubber, acrylonitrile- Acrylonitrile-butadiene rubber containing a butadiene rubber, a carboxyl group, a hydroxyl group, a (meth) acryloyl group, or a morpholine group at the polymer terminal, a carboxylated nitrile rubber, a hydroxyl group-terminated poly (oxypropylene), an alkoxysilyl group-terminated poly (oxy Propylene), poly (oxytetramethylene) glycol, polyolefin glycol (meth) alkyl acrylate-butadiene-styrene copolymer, alkyl (meth) acrylate-silicone copolymer, or silicone (meth) -acryl copolymer or composite Can be mentioned.

이들 유기 미립자는 단독으로 이용하는 외에, 2종 이상의 화합물을 병용하여 이용할 수도 있다. These organic fine particles may be used alone or in combination of two or more compounds.

본 실시 형태의 접착제 조성물은 상온에서 액상인 경우에는 페이스트상에서 사용할 수 있다. 실온에서 고체의 경우에는, 가열하여 사용하는 외에, 용매를 사용하여 페이스트화할 수도 있다. 사용할 수 있는 용매로서는, 접착제 조성물 및 첨가제와 반응성이 없고, 또한 충분한 용해성을 나타내는 것이 바람직하고, 상압에서의 비점이 50 내지 150℃인 것이 바람직하다. 비점이 50℃ 미만인 경우, 실온에서 방치하면 휘발할 우려가 많아져, 개방계에서의 사용이 곤란해지는 경향이 있다. 또한, 비점이 150℃를 초과하면, 용매를 휘발시키는 것이 곤란하여, 접착 후의 신뢰성에 악영향을 미치는 경우가 많아지는 경향이 있다. The adhesive composition of this embodiment can be used in paste form when it is liquid at normal temperature. In the case of a solid at room temperature, in addition to heating, it can also paste into a solvent. As a solvent which can be used, it is preferable that it is not reactive with an adhesive composition and an additive, and shows sufficient solubility, and it is preferable that the boiling point in normal pressure is 50-150 degreeC. When boiling point is less than 50 degreeC, when left at room temperature, there exists a possibility that it may volatilize and it becomes difficult to use in an open system. Moreover, when a boiling point exceeds 150 degreeC, it is difficult to volatilize a solvent and it tends to adversely affect the reliability after adhesion.

또한, 본 실시 형태의 접착제 조성물은 필름상으로 하여 이용할 수도 있다. 접착제 조성물에 필요에 따라 용매 등을 가하는 등을 한 용액을, 불소 수지 필름, 폴리에틸렌테레프탈레이트 필름, 이형지 등의 박리성 기재 상에 도포하거나, 또는 부직포 등의 기재에 상기 용액을 함침시켜 박리성 기재 상에 얹어 놓고, 용매 등을 제거하여 필름으로서 사용할 수 있다. 필름의 형상으로 사용하면 취급성 등의 면에서 한층 편리하다. In addition, the adhesive composition of this embodiment can also be used as a film form. A solution obtained by adding a solvent or the like to the adhesive composition, if necessary, is applied onto a peelable substrate such as a fluororesin film, a polyethylene terephthalate film, a release paper, or impregnated with the solution to a substrate such as a non-woven fabric to release the peelable substrate. It can be used as a film by removing the solvent or the like onto the film. When used in the shape of a film, it is more convenient in terms of handling properties.

본 실시 형태의 접착제 조성물은 가열 및 가압을 병용하여 접착시킬 수 있다. 가열 온도는 100 내지 200℃의 온도가 바람직하다. 압력은 피착체에 손상을 제공하지 않는 범위가 바람직하고, 일반적으로는 0.1 내지 10 MPa가 바람직하다. 이들 가열 및 가압은 0.5초 내지 120초간의 범위에서 행하는 것이 바람직하고, 120 내지 190℃, 3 MPa, 10초의 가열로도 접착시키는 것이 가능하다. The adhesive composition of this embodiment can be bonded together using heating and pressurization. As for heating temperature, the temperature of 100-200 degreeC is preferable. The pressure is preferably in a range that does not cause damage to the adherend, and in general, 0.1 to 10 MPa is preferable. It is preferable to perform these heatings and pressurization in the range for 0.5 second-120 second, and can also adhere | attach by the heating of 120-190 degreeC, 3 MPa, and 10 second.

본 실시 형태의 접착제 조성물은 열팽창 계수가 서로 다른 이종의 피착체의 접착제로서 사용할 수 있다. 구체적으로는 이방 도전 접착제, 은 페이스트, 은 필름 등으로 대표되는 회로 접속 재료, CSP용 엘라스토머, CSP용 언더필재, LOC 테이프 등으로 대표되는 반도체 소자 접착 재료로서 사용할 수 있다. The adhesive composition of this embodiment can be used as an adhesive agent of the heterogeneous to-be-adhered body from which a thermal expansion coefficient differs. Specifically, it can be used as a semiconductor device bonding material represented by a circuit connecting material such as an anisotropic conductive adhesive, a silver paste, or a silver film, an elastomer for CSP, an underfill material for CSP, an LOC tape or the like.

본 실시 형태의 접착제 조성물은 주면 상에 제1 접속 단자를 갖는 제1 회로 부재와, 주면 상에 제2 접속 단자를 갖는 제2 회로 부재를 접속하기 위한 접착제 조성물로서 이용된다. 여기서, 상기 제1 회로 부재 및/또는 상기 제2 회로 부재는, 유리 전이 온도가 200℃ 이하인 열 가소성 수지를 포함하는 기재로 구성된다. 유리 전이 온도가 200℃ 이하인 열 가소성 수지로서는, 특별히 한정되지 않지만, 예를 들면 폴리에틸렌테레프탈레이트, 폴리카보네이트 및 폴리에틸렌나프탈레이트 등을 들 수 있다. The adhesive composition of this embodiment is used as an adhesive composition for connecting the 1st circuit member which has a 1st connection terminal on a main surface, and the 2nd circuit member which has a 2nd connection terminal on a main surface. Here, the said 1st circuit member and / or the said 2nd circuit member are comprised from the base material containing the thermoplastic resin whose glass transition temperature is 200 degrees C or less. Although it does not specifically limit as thermoplastic resin whose glass transition temperature is 200 degrees C or less, For example, a polyethylene terephthalate, a polycarbonate, a polyethylene naphthalate, etc. are mentioned.

다음으로, 상술한 본 실시 형태의 접착제 조성물을 이용한 회로 부재의 접속 구조체에 대해서 설명한다. 도 1은 본 실시 형태의 접착제 조성물을 이용한, 회로 부재의 접속 구조체의 일 실시 형태를 도시하는 모식 단면도이다. 도 2는 도 1에 도시하는 회로 부재의 접속 구조체를 제작하기 전의, 제1 회로 부재, 제2 회로 부재 및 접착제 조성물을 도시하는 모식 단면도이다. Next, the connection structure of the circuit member using the adhesive composition of this embodiment mentioned above is demonstrated. 1: is a schematic cross section which shows one Embodiment of the connection structure of a circuit member using the adhesive composition of this embodiment. FIG. 2: is a schematic cross section which shows a 1st circuit member, a 2nd circuit member, and an adhesive composition before manufacturing the connection structure of the circuit member shown in FIG.

도 1에 도시하는 회로 부재의 접속 구조체 (100)은 제1 회로 기판 (31)의 주면 (31a) 상에 제1 접속 단자 (32)를 갖는 제1 회로 부재 (30)과, 제2 회로 기판 (41)의 주면 (41a) 상에 제2 접속 단자 (42)를 갖는 제2 회로 부재 (40)과, 제1 접속 단자 (32)와 제2 접속 단자 (42)가 대향하도록 제1 회로 기판 (31)의 주면 (31a)와 제2 회로 기판 (41)의 주면 (41a)를 접속하는 접속 부재 (10C)를 구비한다. 제1 접속 단자 (32)와 제2 접속 단자 (42)는 서로 접함으로써 전기적으로 접속되어 있다. 또한, 접속 부재 (10C)는 본 실시 형태의 접착제 조성물 (10)의 경화물로 이루어진다. The connection structure 100 of the circuit member shown in FIG. 1 is the 1st circuit member 30 which has the 1st connection terminal 32 on the main surface 31a of the 1st circuit board 31, and the 2nd circuit board. The first circuit board so that the second circuit member 40 having the second connection terminal 42 and the first connection terminal 32 and the second connection terminal 42 face each other on the main surface 41a of the 41. The connection member 10C which connects the main surface 31a of 31 and the main surface 41a of the 2nd circuit board 41 is provided. The 1st connection terminal 32 and the 2nd connection terminal 42 are electrically connected by contacting each other. In addition, the connection member 10C consists of hardened | cured material of the adhesive composition 10 of this embodiment.

도 1에 도시하는 회로 부재의 접속 구조체 (100)은 예를 들면 다음과 같이 하여 제조할 수 있다. The connection structure 100 of the circuit member shown in FIG. 1 can be manufactured as follows, for example.

우선, 도 2에 도시된 바와 같이, 제1 회로 부재 (30), 제2 회로 부재 (40) 및 필름상으로 성형한 접착제 조성물 (10)을 준비한다. 다음으로, 접착제 조성물 (10)을 제2 회로 부재 (40)에 있어서의 제2 접속 단자 (42)가 형성되어 있는 주면 (41a)에 싣고, 또한 접착제 조성물 (10) 상에 제1 접속 단자 (32)가 제2 접속 단자 (42)와 대향하도록 제1 회로 부재 (30)을 싣는다. 계속해서, 제1 회로 부재 (30) 및 제2 회로 부재 (40)을 통해 접착제 조성물 (10)을 가열하면서 이것을 경화시키고, 동시에 주면 (31a), (41a)에 수직인 방향으로 가압하여, 제1 및 제2 회로 부재 (30), (40)의 사이에 접속 부재 (10C)를 형성시켜, 도 1의 회로 부재의 접속 구조체 (100)을 얻는다. First, as shown in FIG. 2, the 1st circuit member 30, the 2nd circuit member 40, and the adhesive composition 10 shape | molded in the film form are prepared. Next, the adhesive composition 10 is mounted on the main surface 41a in which the second connection terminal 42 in the second circuit member 40 is formed, and further the first connection terminal (on the adhesive composition 10). The first circuit member 30 is mounted so that the 32 faces the second connection terminal 42. Subsequently, the adhesive composition 10 is cured while the adhesive composition 10 is heated through the first circuit member 30 and the second circuit member 40, and simultaneously pressed in a direction perpendicular to the main surfaces 31a and 41a, thereby The connection member 10C is formed between the 1st and 2nd circuit members 30 and 40, and the connection structure 100 of the circuit member of FIG. 1 is obtained.

도 3은 (d) 도전성 입자를 함유하는 본 실시 형태의 접착제 조성물을 이용한, 회로 부재의 접속 구조체의 일 실시 형태를 도시하는 모식 단면도이다. 도 4는 도 3에 도시하는 회로 부재의 접속 구조체를 제작하기 전의, 제1 회로 부재, 제2 회로 부재 및 접착제 조성물(도전성 입자 함유)을 도시하는 모식 단면도이다. It is a schematic cross section which shows one Embodiment of the connection structure of a circuit member using the adhesive composition of this embodiment containing (d) electroconductive particle. FIG. 4: is a schematic cross section which shows the 1st circuit member, the 2nd circuit member, and adhesive composition (containing electroconductive particle) before producing the connection structure of the circuit member shown in FIG.

도 3에 도시하는 회로 부재의 접속 구조체 (200)은 제1 회로 기판 (31)의 주면 (31a) 상에 제1 접속 단자 (32)를 갖는 제1 회로 부재 (30)과, 제2 회로 기판 (41)의 주면 (41a) 상에 제2 접속 단자 (42)를 갖는 제2 회로 부재 (40)과, 제1 접속 단자 (32)와 제2 접속 단자 (42)가 대향하도록 제1 회로 기판 (31)의 주면 (31a)와 제2 회로 기판 (41)의 주면 (41a)를 접속하는 접속 부재 (20C)를 구비한다. 또한, 접속 부재 (20C)는 접착제 조성물의 도전성 입자 이외의 성분 (21) 중에 도전성 입자 (22)가 분산한 접착제 조성물 (20)의 경화물(즉, 접착제 조성물의 도전성 입자 이외의 성분의 경화물 (21C) 중에 도전성 입자 (22)가 분산한 것)이고, 대향하는 제1 접속 단자 (32)와 제2 접속 단자 (42) 사이에서, 도전성 입자 (22)가 양 접속 단자에 접함으로써, 도전성 입자 (22)를 통해 양 접속 단자가 전기적으로 접속되어 있다. The connection structure 200 of the circuit member shown in FIG. 3 is the 1st circuit member 30 which has the 1st connection terminal 32 on the main surface 31a of the 1st circuit board 31, and the 2nd circuit board. The first circuit board so that the second circuit member 40 having the second connection terminal 42 and the first connection terminal 32 and the second connection terminal 42 face each other on the main surface 41a of the 41. The connection member 20C which connects the main surface 31a of 31 and the main surface 41a of the 2nd circuit board 41 is provided. In addition, the connection member 20C is hardened | cured material of the adhesive composition 20 in which the electroconductive particle 22 disperse | distributed in the component 21 other than electroconductive particle of an adhesive composition (that is, hardened | cured material of components other than electroconductive particle of an adhesive composition). Electroconductive particle 22 disperse | distributed in (21C), and the electroconductive particle 22 contacts both connecting terminals between the 1st connecting terminal 32 and the 2nd connecting terminal 42 which oppose, and electroconductivity. Both connection terminals are electrically connected through the particle | grains 22. As shown in FIG.

도 3에 도시하는 회로 부재의 접속 구조체 (200)은 예를 들면, 도 4에 도시된 바와 같이, 제1 회로 부재 (30), 제2 회로 부재 (40) 및 필름상으로 성형한 접착제 조성물 (20)을 준비하여, 상기한 회로 부재의 접속 구조체 (100)을 얻는 것과 동일한 방법에 의해 제조할 수 있다. As shown in FIG. 4, the connection structure 200 of the circuit member shown in FIG. 3 is the adhesive composition formed into the 1st circuit member 30, the 2nd circuit member 40, and the film form, for example. 20) can be prepared and manufactured by the method similar to obtaining the connection structure 100 of the said circuit member.

여기서, 제1 회로 부재 (30) 및 제2 회로 부재 (40) 중의 적어도 한쪽은 유리 전이 온도가 200℃ 이하인 열 가소성 수지를 함유하는 기재로 구성된다. 즉, 제1 회로 기판 (31) 및 제2 회로 기판 (41) 중의 적어도 한쪽은 유리 전이 온도가 200℃ 이하인 열 가소성 수지를 함유한다. 여기서, 유리 전이 온도가 200℃ 이하인 열 가소성 수지로서는, 폴리에틸렌테레프탈레이트, 폴리카보네이트 및 폴리에틸렌나프탈레이트로 이루어지는 군으로부터 선택되는 적어도 1종인 것이 바람직하다. 제1 회로 부재 (30) 및 제2 회로 부재 (40) 중의 적어도 한쪽이 폴리에틸렌테레프탈레이트, 폴리카보네이트 및 폴리에틸렌나프탈레이트로 이루어지는 군으로부터 선택되는 적어도 1종을 함유하는 기재로 구성되어 있는 회로 부재이면, 접착제 조성물과의 습윤성이 향상하여 접착 강도가 보다 향상된다. 그 때문에, 이러한 회로 부재의 접속 구조체는 보다 우수한 접속 신뢰성을 얻을 수 있다. Here, at least one of the 1st circuit member 30 and the 2nd circuit member 40 is comprised from the base material containing the thermoplastic resin whose glass transition temperature is 200 degrees C or less. That is, at least one of the 1st circuit board 31 and the 2nd circuit board 41 contains the thermoplastic resin whose glass transition temperature is 200 degrees C or less. Here, as a thermoplastic resin whose glass transition temperature is 200 degrees C or less, it is preferable that it is at least 1 sort (s) chosen from the group which consists of polyethylene terephthalate, a polycarbonate, and polyethylene naphthalate. If at least one of the 1st circuit member 30 and the 2nd circuit member 40 is a circuit member comprised from the base material containing at least 1 sort (s) chosen from the group which consists of a polyethylene terephthalate, a polycarbonate, and a polyethylene naphthalate, The wettability with an adhesive composition improves, and adhesive strength improves more. Therefore, the connection structure of such a circuit member can acquire more excellent connection reliability.

또한, 제1 회로 부재 (30) 및 제2 회로 부재 (40) 중의 한쪽은, 폴리에틸렌테레프탈레이트, 폴리카보네이트 및 폴리에틸렌나프탈레이트로 이루어지는 군으로부터 선택되는 적어도 1종을 함유하지 않은 기재로 구성되어 있을 수도 있다. 그와 같은 회로 부재를 형성하는 기재로서는, 반도체, 유리, 세라믹 등의 무기물로 이루어지는 기재, 폴리이미드 등의 유기물로 이루어지는 기재, 유리/에폭시 등의 무기물과 유기물을 조합한 기재 등을 사용할 수 있다. In addition, one of the 1st circuit member 30 and the 2nd circuit member 40 may be comprised from the base material which does not contain at least 1 sort (s) chosen from the group which consists of a polyethylene terephthalate, a polycarbonate, and a polyethylene naphthalate. have. As a base material which forms such a circuit member, the base material which consists of inorganic materials, such as a semiconductor, glass, and a ceramic, the base material which consists of organic materials, such as a polyimide, the base material which combined inorganic materials, such as glass / epoxy, and organic substance, etc. can be used.

또한, 제1 접속 단자 (32) 및 제2 접속 단자 (42) 중의 적어도 한쪽은 ITO 및 IZO로 이루어지는 군으로부터 선택되는 적어도 1종으로 구성되는 것이 바람직하다. ITO 및 IZO는 에칭이 용이하고 패턴 가공성이 우수하기 때문에 접속 단자로서 바람직하다. 그리고, 본 실시 형태의 접착제 조성물을 이용함으로써 ITO 및/또는 IZO로 구성된 접속 단자의 부식을 충분히 억제할 수 있다. In addition, it is preferable that at least one of the 1st connection terminal 32 and the 2nd connection terminal 42 is comprised by at least 1 sort (s) chosen from the group which consists of ITO and IZO. ITO and IZO are preferable as connection terminals because they are easy to etch and have excellent pattern workability. And by using the adhesive composition of this embodiment, corrosion of the connection terminal comprised from ITO and / or IZO can fully be suppressed.

또한, 제1 접속 단자 (32) 및 제2 접속 단자 (42) 중의 한쪽 또는 양쪽은 ITO 및 IZO 이외의 재료로 구성되어 있을 수도 있다. 그와 같은 접속 단자로서는, 구리, 은, 알루미늄, 금, 팔라듐, 니켈 및 이들의 합금 등의 금속으로 이루어지는 접속 단자를 사용할 수 있다. In addition, one or both of the 1st connection terminal 32 and the 2nd connection terminal 42 may be comprised from materials other than ITO and IZO. As such a connection terminal, the connection terminal which consists of metals, such as copper, silver, aluminum, gold, palladium, nickel, and these alloys, can be used.

또한, 접속 부재로서 이용되는 본 실시 형태의 접착제 조성물은 완전 경화(소정 경화 조건에서 달성할 수 있는 최고도의 경화)하고 있을 필요는 없고, 상기 특성을 발생시키는 한에 있어서 부분 경화의 상태일 수도 있다. In addition, the adhesive composition of this embodiment used as a connection member does not need to be fully hardened (the highest hardening which can be achieved by predetermined hardening conditions), and may be in the state of partial hardening as long as the said characteristic is produced. have.

[실시예][Example]

이하에, 본 실시 형태를 실시예에 기초하여 구체적으로 설명하는데, 본 실시 형태는 이것에 한정되는 것은 아니다. EMBODIMENT OF THE INVENTION Although this embodiment is demonstrated concretely based on an Example below, this embodiment is not limited to this.

<열 가소성 수지><Thermoplastic>

(페녹시 수지의 조제) (Preparation of phenoxy resin)

페녹시 수지(도토 가세이 가부시끼가이샤 제조, YP-50(상품명)) 40 질량부를, 메틸에틸케톤 60 질량부에 용해하여 고형분 40 질량%의 용액으로 하였다. 40 mass parts of phenoxy resins (made by Toto Kasei Co., Ltd., YP-50 (brand name)) were melt | dissolved in 60 mass parts of methyl ethyl ketone, and it was set as the solution of 40 mass% of solid content.

(폴리에스테르우레탄 수지의 준비) (Preparation of polyester urethane resin)

폴리에스테르우레탄 수지(도요보 가부시끼가이샤 제조, UR-1400(상품명))은 수지분 30 질량%의 메틸에틸케톤과 톨루엔의 1:1 혼합 용매 용해품을 이용하였다.Polyester urethane resin (Toyobo Co., Ltd. make, UR-1400 (brand name)) used the 1: 1 mixed solvent melt | dissolved product of methyl ethyl ketone and toluene of 30 mass% of resin powder.

(우레탄 수지의 합성)(Synthesis of urethane resin)

교반기, 온도계, 염화칼슘 건조관을 구비한 환류 냉각관, 질소 가스 도입관을 구비한 반응 용기에 중량 평균 분자량 2000의 폴리부틸렌아디페이트디올 450 질량부, 중량 평균 분자량 2000의 폴리옥시테트라메틸렌글리콜 450 질량부 및 1,4-부틸렌글리콜 100 질량부를 메틸에틸케톤 4000 질량부 중에서 균일하게 혼합하고, 디페닐메탄디이소시아네이트 390 질량부를 가하고 70℃에서 반응시켜 중량 평균 분자량 35만의 우레탄 수지를 얻었다. In a reaction vessel equipped with a stirrer, a thermometer, a reflux cooling tube having a calcium chloride drying tube, and a nitrogen gas introduction tube, 450 parts by weight of polybutylene adipatediol having a weight average molecular weight of 2000 and a polyoxytetramethylene glycol 450 having a weight average molecular weight of 2000 Mass part and 100 mass parts of 1, 4- butylene glycol were mixed uniformly in 4000 mass parts of methyl ethyl ketone, 390 mass parts of diphenylmethane diisocyanate were added, and it reacted at 70 degreeC, and obtained the urethane resin of the weight average molecular weight 350,000.

<라디칼 중합성 화합물><Radical Polymerizable Compound>

(우레탄아크릴레이트(L-1600S)의 준비) (Preparation of urethane acrylate (L-1600S))

중량 평균 분자량이 15000, 임계 표면 장력이 15 mN/m인 우레탄아크릴레이트(미쓰이 폴리우레탄 가부시끼가이샤 제조, L-1600S(상품명))를 준비하였다. 또한, L-1600S는 에테르계 디올을 이용하고 있는 것으로서, 상기 화학식 (A)를 만족시키지 않는 것이다. Urethane acrylate (Mitsui Polyurethanes Co., Ltd. make, L-1600S (brand name)) whose weight average molecular weight is 15000 and critical surface tension is 15 mN / m was prepared. In addition, L-1600S uses ether type diol and does not satisfy said Formula (A).

(우레탄아크릴레이트(PE-UA1)의 합성)(Synthesis of urethane acrylate (PE-UA1))

교반기, 온도계, 염화칼슘 건조관을 구비한 환류 냉각관, 질소 가스 도입관을 구비한 반응 용기에 수 평균 분자량 2000의 폴리(3-메틸펜탄아디페이트)디올(지방족 폴리에스테르디올, 가부시끼가이샤 구라레사 제조, 구라폴 P-2010(상품명)) 2000 질량부(1.00몰), 디부틸주석디라우레이트(알드리치 가부시끼가이샤 제조) 5.53 질량부를 투입하였다. 충분히 질소 가스를 도입한 후, 70 내지 75℃로 가열하고, 디시클로헥실메탄4,4'-디이소시아네이트(지방족 디이소시아네이트, 에보닉 데구사사 제조, VESTANAT H12DMI(상품명)) 787 질량부(3.00몰)를 3시간에 균일하게 적하하여 반응시켰다. 적하 완료 후 약 10시간 반응을 계속하였다. 이것에 2-히드록시에틸아크릴레이트(알드리치 가부시끼가이샤 제조) 238 질량부(2.05몰), 히드로퀴논모노메틸에테르(알드리치 가부시끼가이샤 제조) 0.53 질량부를 투입하고, 또한 10시간 반응시키고, IR 측정에 의해 이소시아네이트가 소실한 것을 확인하여 반응을 종료하여 우레탄아크릴레이트를 얻었다. 얻어진 우레탄아크릴레이트(PE-UA1)의 임계 표면 장력은 30 mN/m, 중량 평균 분자량은 15300이었다. 또한, PE-UA1은 폴리에스테르디올을 이용하고 있는 것으로서, 상기 화학식 (A)를 만족시키는 것이다. A poly (3-methylpentane adipate) diol (aliphatic polyesterdiol, aliphatic polyester diol, fluorocarbonic acid) having a number average molecular weight of 2000 in a reaction vessel equipped with a stirrer, a thermometer, a reflux cooling tube with a calcium chloride drying tube, and a nitrogen gas introduction tube. 2000 mass parts (1.00 mol) of manufacture, Golapol P-2010 (brand name), and 5.53 mass parts of dibutyltin dilaurate (made by Aldrich Co., Ltd.) were prepared. After introducing nitrogen gas sufficiently, it heated at 70-75 degreeC, and dicyclohexyl methane 4,4'- diisocyanate (aliphatic diisocyanate, the product made by Evonik Degussa, VESTANAT H 12 DMI (brand name)) 787 mass parts (3.00 mol) was uniformly added dropwise for 3 hours to react. After completion of the dropping, the reaction was continued for about 10 hours. 238 parts by mass (2.05 mol) of 2-hydroxyethyl acrylate (manufactured by Aldrich Co., Ltd.) and 0.53 parts by mass of hydroquinone monomethyl ether (manufactured by Aldrich Co., Ltd.) were added thereto, and the resulting mixture was allowed to react for 10 hours, followed by IR measurement. By confirming that the isocyanate disappeared by this, reaction was complete | finished and urethane acrylate was obtained. The critical surface tension of the obtained urethane acrylate (PE-UA1) was 30 mN / m, and the weight average molecular weight was 15300. In addition, PE-UA1 uses polyesterdiol and satisfies the above formula (A).

(우레탄아크릴레이트(PE-UA2)의 합성)(Synthesis of urethane acrylate (PE-UA2))

교반기, 온도계, 염화칼슘 건조관을 구비한 환류 냉각관, 질소 가스 도입관을 구비한 반응 용기에 수 평균 분자량 2000의 폴리카프로락톤디올(지방족 폴리에스테르디올, 상품명: 플락셀 220EB, 다이셀 가가꾸 고교 가부시끼가이샤 제조) 2000 질량부(1.00몰), 디부틸주석디라우레이트(알드리치 가부시끼가이샤 제조) 5.53 질량부를 투입하였다. 충분히 질소 가스를 도입한 후, 70 내지 75℃로 가열하고, 이소포론디이소시아네이트(지방족 디이소시아네이트, 알드리치 가부시끼가이샤 제조) 666 질량부(3.00몰)를 3시간에 균일하게 적하하여 반응시켰다. 적하 완료 후 약 10시간 반응을 계속하였다. 이것에 2-히드록시에틸아크릴레이트(알드리치 가부시끼가이샤 제조) 238 질량부(2.05몰), 히드로퀴논모노메틸에테르(알드리치 가부시끼가이샤 제조) 0.53 질량부를 투입하고, 또한 10시간 반응시키고, IR 측정에 의해 이소시아네이트가 소실한 것을 확인하여 반응을 종료하여 우레탄아크릴레이트를 얻었다. 얻어진 우레탄아크릴레이트(PE-UA2)의 임계 표면 장력은 25 mN/m, 중량 평균 분자량은 13500이었다. 또한, PE-UA2는 폴리에스테르디올을 이용하고 있는 것으로서, 상기 화학식 (A)를 만족시키는 것이다. Polycaprolactone diol (aliphatic polyesterdiol, trade name: Flaccel 220EB, Daicel Chemical Industries, Ltd.) having a number average molecular weight of 2000 in a reaction vessel equipped with a stirrer, a thermometer, a reflux cooling tube with a calcium chloride drying tube, and a nitrogen gas introduction tube. 2000 parts by mass (1.00 mol) of dibutyl tin dilaurate (manufactured by Aldrich Co., Ltd.) was added thereto. After sufficiently introducing nitrogen gas, the mixture was heated to 70 to 75 ° C, and 666 parts by mass (3.00 mol) of isophorone diisocyanate (aliphatic diisocyanate, manufactured by Aldrich Co., Ltd.) were added dropwise to react for 3 hours. After completion of the dropping, the reaction was continued for about 10 hours. 238 parts by mass (2.05 mol) of 2-hydroxyethyl acrylate (manufactured by Aldrich Co., Ltd.) and 0.53 parts by mass of hydroquinone monomethyl ether (manufactured by Aldrich Co., Ltd.) were added thereto, and the resulting mixture was allowed to react for 10 hours, followed by IR measurement. By confirming that the isocyanate disappeared by this, reaction was complete | finished and urethane acrylate was obtained. The critical surface tension of the obtained urethane acrylate (PE-UA2) was 25 mN / m, and the weight average molecular weight was 13500. In addition, PE-UA2 uses polyesterdiol and satisfies the above formula (A).

(우레탄아크릴레이트(PE-UA3)의 합성)(Synthesis of urethane acrylate (PE-UA3))

교반기, 온도계, 염화칼슘 건조관을 구비한 환류 냉각관, 질소 가스 도입관을 구비한 반응 용기에 2-히드록시에틸아크릴레이트(알드리치 가부시끼가이샤 제조) 238 질량부(2.05몰), 히드로퀴논모노메틸에테르(알드리치 가부시끼가이샤 제조) 0.53 질량부, 수 평균 분자량 1000의 폴리카프로락톤디올(지방족 폴리에스테르디올, 상품명: 플락셀 210N, 다이셀 가가꾸 고교 가부시끼가이샤 제조) 2000 질량부(2.00몰), 디부틸주석디라우레이트(알드리치 가부시끼가이샤 제조) 5.53 질량부를 투입하였다. 충분히 질소 가스를 도입한 후, 70 내지 75℃로 가열하고, 이소포론디이소시아네이트(지방족 디이소시아네이트, 알드리치 가부시끼가이샤 제조) 666 질량부(3.00몰)를 3시간에 균일하게 적하하여 반응시켰다. 적하 완료 후 약 10시간 반응을 계속하고, IR 측정에 의해 이소시아네이트가 소실한 것을 확인하여 반응을 종료하여 우레탄아크릴레이트를 얻었다. 얻어진 우레탄아크릴레이트(PE-UA3)의 임계 표면 장력은 28 mN/m, 중량 평균 분자량은 14500이었다. 또한, PE-UA3은 폴리에스테르디올을 이용하고 있는 것으로서, 상기 화학식 (A)를 만족시키는 것이다.238 parts by mass of 2-hydroxyethyl acrylate (manufactured by Aldrich Co., Ltd.) and hydroquinone monomethyl ether in a reaction vessel equipped with a stirrer, a thermometer, a reflux cooling tube having a calcium chloride drying tube, and a nitrogen gas introduction tube. (Manufactured by Aldrich Co., Ltd.) 2000 parts by mass (2.00 mol) of 0.53 parts by mass of polycaprolactone diol (aliphatic polyesterdiol, trade name: Flaccel 210N, manufactured by Daicel Kagaku Kogyo Co., Ltd.) of number average molecular weight 1000, 5.53 parts by mass of dibutyltin dilaurate (manufactured by Aldrich Co., Ltd.) was added. After sufficiently introducing nitrogen gas, the mixture was heated to 70 to 75 ° C, and 666 parts by mass (3.00 mol) of isophorone diisocyanate (aliphatic diisocyanate, manufactured by Aldrich Co., Ltd.) were added dropwise to react for 3 hours. After completion of the dropwise addition, the reaction was continued for about 10 hours, confirmed that the isocyanate disappeared by IR measurement, and the reaction was terminated to obtain urethane acrylate. The critical surface tension of the obtained urethane acrylate (PE-UA3) was 28 mN / m, and the weight average molecular weight was 14500. In addition, PE-UA3 uses polyester diol and satisfies the above formula (A).

(우레탄아크릴레이트(PE-UA4)의 합성)(Synthesis of urethane acrylate (PE-UA4))

교반기, 온도계, 염화칼슘 건조관을 구비한 환류 냉각관, 질소 가스 도입관을 구비한 반응 용기에 3-메틸-1,5-펜탄디올 1650 질량부(14몰)과 이소프탈산 1660 질량부(10몰)을 투입하고, 상압하, 충분히 질소 가스를 도입한 후, 약 170℃에서 생성되는 물을 계 밖으로 증류 제거하면서 에스테르화 반응을 행하였다. 폴리에스테르의 산가가 0.3 mgKOH/g 이하가 된 시점에서 진공 펌프에 의해 서서히 진공도를 높여서 반응을 완결시켰다. 이와 같이 하여 얻어진 방향족 폴리에스테르디올(ED-1)은 수 평균 분자량 2000을 갖고 있었다. 1650 parts by mass (14 mol) of 3-methyl-1,5-pentanediol and 1660 parts by mass of isophthalic acid (10 mol) in a reaction vessel equipped with a stirrer, a thermometer, a reflux cooling tube having a calcium chloride drying tube, and a nitrogen gas introduction tube. ), Nitrogen gas was introduced under normal pressure, and then the esterification reaction was carried out while distilling out water generated at about 170 ° C out of the system. When the acid value of polyester became 0.3 mgKOH / g or less, vacuum degree was gradually raised by the vacuum pump and the reaction was completed. The aromatic polyester diol (ED-1) thus obtained had a number average molecular weight 2000.

또한, 교반기, 온도계, 염화칼슘 건조관을 구비한 환류 냉각관, 질소 가스 도입관을 구비한 반응 용기에 얻어진 방향족 폴리에스테르디올(ED-1)을 2000 질량부(1.00몰), 디부틸주석디라우레이트(알드리치 가부시끼가이샤 제조) 5.53 질량부를 투입하였다. 충분히 질소 가스를 도입한 후, 70 내지 75℃로 가열하고, 이소포론디이소시아네이트(지방족 디이소시아네이트, 알드리치 가부시끼가이샤 제조) 666 질량부(3.00몰)를 3시간에 균일하게 적하하여 반응시켰다. 적하 완료 후, 약 15시간 반응을 계속하였다. 이것에 2-히드록시에틸아크릴레이트(알드리치 가부시끼가이샤 제조) 238 질량부(2.05몰), 히드로퀴논모노메틸에테르(알드리치 가부시끼가이샤 제조) 0.53 질량부를 투입하고, 또한 7시간 반응시키고, IR 측정에 의해 이소시아네이트가 소실한 것을 확인하여 반응을 종료하여 우레탄아크릴레이트를 얻었다. 얻어진 우레탄아크릴레이트(PE-UA4)의 임계 표면 장력은 42 mN/m, 중량 평균 분자량은 11500이었다. 또한, PE-UA4는 폴리에스테르디올을 이용하고 있는 것으로서, 상기 화학식 (A)를 만족시키는 것이다. Further, 2000 parts by mass (1.00 mol) of aromatic polyesterdiol (ED-1) obtained in a reaction vessel equipped with a stirrer, a thermometer, a reflux cooling tube having a calcium chloride drying tube, and a nitrogen gas introduction tube, and dibutyltin dilau 5.53 mass parts of rates (made by Aldrich Co., Ltd.) were prepared. After sufficiently introducing nitrogen gas, the mixture was heated to 70 to 75 ° C, and 666 parts by mass (3.00 mol) of isophorone diisocyanate (aliphatic diisocyanate, manufactured by Aldrich Co., Ltd.) were added dropwise to react for 3 hours. After completion of the dropwise addition, the reaction was continued for about 15 hours. 238 parts by mass (2.05 mol) of 2-hydroxyethyl acrylate (manufactured by Aldrich Co., Ltd.) and 0.53 parts by mass of hydroquinone monomethyl ether (manufactured by Aldrich Co., Ltd.) were added thereto, and the resulting mixture was allowed to react for 7 hours to carry out IR measurement. By confirming that the isocyanate disappeared by this, reaction was complete | finished and urethane acrylate was obtained. The critical surface tension of the obtained urethane acrylate (PE-UA4) was 42 mN / m, and the weight average molecular weight was 11500. In addition, PE-UA4 uses polyester diol and satisfies the above formula (A).

(우레탄아크릴레이트(PE-UA5)의 합성)(Synthesis of urethane acrylate (PE-UA5))

교반기, 온도계, 염화칼슘 건조관을 구비한 환류 냉각관, 질소 가스 도입관을 구비한 반응 용기에 수 평균 분자량 2000의 폴리(1,6-헥산디올카보네이트)디올(지방족 폴리카보네이트디올, 아사히 가세이 케미컬즈 가부시끼가이샤 제조, PCDL T5652(상품명)) 4000 질량부(2.00몰), 디부틸주석디라우레이트(알드리치 가부시끼가이샤 제조) 5.53 질량부를 투입하였다. 충분히 질소 가스를 도입한 후, 70 내지 75℃로 가열하고, 이소포론디이소시아네이트(지방족 디이소시아네이트, 알드리치 가부시끼가이샤 제조) 666 질량부(3.00몰)를 3시간에 균일하게 적하하여 반응시켰다. 적하 완료 후 약 15시간 반응을 계속하였다. 이것에 2-히드록시에틸아크릴레이트(알드리치 가부시끼가이샤 제조) 238 질량부(2.05몰), 히드로퀴논모노메틸에테르(알드리치 가부시끼가이샤 제조) 0.53 질량부를 투입하고, 또한 10시간 반응시키고, IR 측정에 의해 이소시아네이트가 소실한 것을 확인하여 반응을 종료하여 우레탄아크릴레이트를 얻었다. 얻어진 우레탄아크릴레이트(PE-UA5)의 임계 표면 장력은 21 mN/m, 중량 평균 분자량은 30000이었다. 또한, PE-UA5는 폴리카보네이트디올을 이용하고 있는 것으로서, 상기 화학식 (A)를 만족시키지 않는 것이다. Poly (1,6-hexanediol carbonate) diol (aliphatic polycarbonate diol, Asahi Kasei Chemicals) having a number average molecular weight of 2000 in a reaction vessel equipped with a stirrer, a thermometer, a reflux cooling tube with a calcium chloride drying tube, and a nitrogen gas introduction tube. 4000 parts by mass (2.00 mol) of PCDL T5652 (trade name), and 5.53 parts by mass of dibutyltin dilaurate (manufactured by Aldrich Co., Ltd.) were charged. After sufficiently introducing nitrogen gas, the mixture was heated to 70 to 75 ° C, and 666 parts by mass (3.00 mol) of isophorone diisocyanate (aliphatic diisocyanate, manufactured by Aldrich Co., Ltd.) were added dropwise to react for 3 hours. After completion of the dropwise addition, the reaction was continued for about 15 hours. 238 parts by mass (2.05 mol) of 2-hydroxyethyl acrylate (manufactured by Aldrich Co., Ltd.) and 0.53 parts by mass of hydroquinone monomethyl ether (manufactured by Aldrich Co., Ltd.) were added thereto, and the resulting mixture was allowed to react for 10 hours, followed by IR measurement. By confirming that the isocyanate disappeared by this, reaction was complete | finished and urethane acrylate was obtained. The critical surface tension of the obtained urethane acrylate (PE-UA5) was 21 mN / m, and the weight average molecular weight was 30000. In addition, PE-UA5 uses polycarbonate diol and does not satisfy the above formula (A).

(이소시아누르산 변성 2관능 아크릴레이트(M-215)의 준비)(Preparation of isocyanuric acid modified bifunctional acrylate (M-215))

이소시아누르산 변성 2관능 아크릴레이트(도아 고세이 가부시끼가이샤 제조, M-215(상품명))를 준비하였다. Isocyanuric acid modified bifunctional acrylate (made by Toagosei Co., Ltd., M-215 (brand name)) was prepared.

(인산기를 갖는 비닐 화합물(P-2M)의 준비) (Preparation of vinyl compound (P-2M) which has a phosphate group)

2-(메트)아크릴로일옥시에틸포스페이트(상품명: 라이트에스테르 P-2M, 교에이샤 가가꾸 가부시끼가이샤 제조)를 준비하였다. 2- (meth) acryloyloxyethyl phosphate (brand name: Light ester P-2M, Kyoisha Chemical Co., Ltd. make) was prepared.

<라디칼 중합 개시제> &Lt; Radical polymerization initiator &

라디칼 중합 개시제로서 디벤조일퍼옥시드(상품명: 나이퍼 BW, 니찌유 가부시끼가이샤 제조)를 준비하였다. Dibenzoyl peroxide (brand name: Naper BW, Nichiyu Corp.) was prepared as a radical polymerization initiator.

<도전성 입자><Conductive Particles>

(도전성 입자의 제작)(Production of conductive particles)

폴리스티렌을 핵으로 하는 입자의 표면에 두께 0.2 ㎛의 니켈층을 설치하고, 이 니켈층의 외측에 두께 0.02 ㎛의 금층을 설치하여, 평균 입경 10 ㎛, 비중 2.5의 도전성 입자를 제작하였다. A nickel layer having a thickness of 0.2 μm was provided on the surface of the particles containing polystyrene as a nucleus, and a gold layer having a thickness of 0.02 μm was provided on the outside of the nickel layer to prepare conductive particles having an average particle diameter of 10 μm and a specific gravity of 2.5.

[실시예 1 내지 10 및 비교예 1 내지 5] [Examples 1 to 10 and Comparative Examples 1 to 5]

고형 질량비로 표 2에 나타낸 바와 같이 열 가소성 수지, 라디칼 중합성 화합물 및 라디칼 중합 개시제를 배합하고, 또한 도전성 입자를 1.5 부피% 배합 분산시켜 접착제 조성물을 얻었다. 얻어진 접착제 조성물을 도공 장치를 이용하여 두께 80 ㎛의 불소 수지 필름 상에 도포하고, 70℃, 10분의 열풍 건조에 의해서 접착제층의 두께가 20 ㎛인 필름상 접착제 조성물을 얻었다. As shown in Table 2 by a solid mass ratio, a thermoplastic resin, a radically polymerizable compound, and a radical polymerization initiator were mix | blended, and the electroconductive particle was mix | blended and disperse | distributed 1.5 volume%, and the adhesive composition was obtained. The obtained adhesive composition was apply | coated on the 80-micrometer-thick fluororesin film using the coating apparatus, and the film adhesive composition of 20 micrometers in thickness of an adhesive bond layer was obtained by 70 degreeC and hot air drying for 10 minutes.

Figure pat00032
Figure pat00032

〔접속 저항, 접착 강도의 측정〕[Measurement of connection resistance, adhesive strength]

실시예 1 내지 10 및 비교예 1 내지 5의 필름상 접착제 조성물을 폴리이미드 필름(Tg 350℃) 상에 라인폭 150 ㎛, 피치 300 ㎛, 두께 8 ㎛의 구리 회로를 80개 갖는 플렉시블 회로판(FPC)와, 두께 5 ㎛의 Ag 페이스트의 박층을 형성한 PET 기판(두께 0.1 mm)과의 사이에 개재시켰다. 또한, 실시예 1 내지 10 및 비교예 1 내지 5의 필름상 접착제 조성물을 폴리이미드 필름 상에 라인폭 150 ㎛, 피치 300 ㎛, 두께 18 ㎛의 구리 회로를 80개 갖는 FPC와, PET(두께 0.1 mm) 필름 상에 라인폭 150 ㎛, 피치 300 ㎛, 두께 10 ㎛의 Ag 페이스트 회로를 형성한 기판과의 사이에 개재시켰다. 이들을, 각각 열압착 장치(가열 방식: 콘스탄트히트형, 도레이 엔지니어링사 제조)를 이용하여, 150℃, 2 MPa에서 10초간 가열 가압하여 폭 2 mm에 걸쳐서 접속하여 접속체를 제작하였다. 이들 접속체의 인접 회로 사이의 저항값을, 접착 직후와, 85℃, 85% RH의 고온 고습조 중에 240시간 보유한 후(시험 후)에 멀티미터로 측정하였다. 저항값은 인접 회로 사이의 저항 37점의 평균으로 나타내었다. The flexible adhesive circuit board (FPC) which has 80 copper circuits of 150 micrometers in width, 300 micrometers in pitch, and 8 micrometers in thickness on the polyimide film (Tg 350 degreeC) of the film adhesive composition of Examples 1-10 and Comparative Examples 1-5. ) And a PET substrate (0.1 mm thick) in which a thin layer of Ag paste having a thickness of 5 µm was formed. Further, the film adhesive compositions of Examples 1 to 10 and Comparative Examples 1 to 5 were FPC having 80 copper circuits having a line width of 150 μm, a pitch of 300 μm, and a thickness of 18 μm on a polyimide film, and PET (thickness 0.1). mm) It interposed between the board | substrate which formed Ag paste circuit of 150 micrometers of line width, 300 micrometers of pitch, and 10 micrometers in thickness on a film. These were heated and pressurized at 150 degreeC and 2 MPa for 10 second using the thermocompression bonding apparatus (heating method: a constant heat type, Toray Engineering Co., Ltd.), respectively, and were connected over 2 mm in width, and the connection body was produced. The resistance value between the adjacent circuits of these connection bodies was measured by a multimeter immediately after adhesion | attachment, and hold | maintained for 240 hours (after test) in 85 degreeC and the high temperature high humidity tank of 85% RH (after test). The resistance value was represented by the average of 37 resistance points between adjacent circuits.

또한, 각각의 접속체의 접착 강도를 JIS-Z0237에 준하여 90도 박리법으로 측정하여 평가하였다. 여기서, 접착 강도의 측정 장치는 도요 볼드윈 가부시끼가이샤 제조의 텐실론 UTM-4(박리 속도 50 mm/분, 25℃)를 사용하였다. 이상과 같이 하여 행한 필름상 접착제 조성물의 접속 저항 및 접착 강도의 측정의 결과를 하기 표 3에 나타내었다. In addition, the adhesive strength of each connection body was measured and evaluated by the 90 degree peeling method according to JIS-Z0237. Here, Tensilon UTM-4 (peel rate 50 mm / min, 25 degreeC) by Toyo Baldwin Co., Ltd. was used for the measurement apparatus of adhesive strength. The result of the measurement of the connection resistance and adhesive strength of the film adhesive composition performed as mentioned above is shown in Table 3 below.

Figure pat00033
Figure pat00033

실시예 1 내지 7의 접착제 조성물은 가열 온도 150℃에서, 접착 직후 및 85℃, 85% RH의 고온 고습조 중에 240시간 보유한 후(시험 후)에, 약 1.2 Ω 이하의 양호한 접속 저항 및 600 N/m 이상의 양호한 접착 강도를 나타내었다. The adhesive compositions of Examples 1 to 7 had a good connection resistance of about 1.2 Ω or less and 600 N at the heating temperature of 150 ° C. immediately after adhesion and after holding for 240 hours in a high temperature and high humidity bath at 85 ° C. and 85% RH (after the test). good adhesion strength of at least / m.

이에 비하여 비교예 1 및 3의 접착제 조성물은 접착 직후 및 85℃, 85% RH의 고온 고습조 중에 240시간 보유한 후(시험 후)에는 양호한 접속 저항을 나타내지만, 접착 강도가 낮아졌다. 또한, 비교예 2, 4 및 5의 접착제 조성물은 접착 직후 및 85℃, 85% RH의 고온 고습조 중에 240시간 보유한 후(시험 후)의 접속 저항이 높고, 접착 강도도 실시예 1 내지 7과 비교하여 낮게 되었다. In contrast, the adhesive compositions of Comparative Examples 1 and 3 exhibited good connection resistance immediately after adhesion and after 240 hours of storage at 85 ° C. and a high temperature and high humidity bath at 85% RH (after the test), but the adhesive strength was lowered. In addition, the adhesive compositions of Comparative Examples 2, 4 and 5 had a high connection resistance immediately after adhesion and after holding for 240 hours in a high temperature and high humidity bath at 85 ° C. and 85% RH (after the test), and the adhesive strengths of Examples 1 to 7 were also high. Compared to low.

한편, 실시예 8 내지 10의 접착제 조성물은 접착 직후 및 85℃, 85% RH의 고온 고습조 중에 240시간 보유한 후(시험 후)에, 약 1.2 Ω 이하의 양호한 접속 저항을 나타내고, 또한 비교예 1 및 3에 비교하여 접착 강도가 우수하였다. On the other hand, the adhesive composition of Examples 8-10 shows favorable connection resistance of about 1.2 (ohm) or less immediately after adhesion | attachment, and after hold | maintaining for 240 hours (after test) in 85 degreeC and the high temperature high humidity tank of 85% RH, and also Comparative Example 1 And the adhesive strength was excellent compared with 3.

[실시예 11 내지 13 및 비교예 6 및 7] [Examples 11 to 13 and Comparative Examples 6 and 7]

또한, 실시예 3, 4 및 7 및 비교예 3 및 4의 필름상 접착제 조성물을 폴리이미드 필름 상에 라인폭 150 ㎛, 피치 300 ㎛, 두께 8 ㎛의 구리 회로를 80개 갖는 플렉시블 회로판(FPC)와, PET 필름(두께 0.1 mm, Tg 120℃), PC 필름(두께 0.1 mm, Tg 150℃) 및 PEN 필름(두께 0.1 mm, Tg 160℃)과의 사이에 각각 개재시켰다. 이들을, 각각 열압착 장치(가열 방식: 콘스탄트히트형, 도레이 엔지니어링사 제조)를 이용하여, 150℃, 2 MPa에서 10초간 가열 가압하여 폭 2 mm에 내로 압착하여 접속체를 제작하였다. Moreover, the flexible adhesive circuit board (FPC) which has 80 copper circuits of 150 micrometers of line width, 300 micrometers of pitch, and 8 micrometers in thickness of the film adhesive composition of Examples 3, 4 and 7 and Comparative Examples 3 and 4 on a polyimide film And a PET film (thickness 0.1 mm, Tg 120 degreeC), a PC film (thickness 0.1 mm, Tg 150 degreeC), and a PEN film (thickness 0.1 mm, Tg 160 degreeC), respectively. These were each heat-pressurized at 150 ° C and 2 MPa for 10 seconds using a thermocompression bonding apparatus (heating method: constant heat type, manufactured by Toray Engineering Co., Ltd.), and pressed into a width of 2 mm to prepare a connecting body.

또한, 각각의 접속체의 접착 강도는 상기 방법과 동일하게 측정하였다. 이상과 같이 하여 행한 필름상 접착제 조성물의 접착 강도의 측정 결과를 하기 표 4에 나타내었다. In addition, the adhesive strength of each connector was measured similarly to the said method. The measurement result of the adhesive strength of the film adhesive composition performed as mentioned above is shown in Table 4 below.

Figure pat00034
Figure pat00034

실시예 11 내지 13에서 이용된 접착제 조성물은 어느 쪽의 기재에 대해서도 가열 온도 150℃에서, 접착 직후 및 85℃, 85% RH의 고온 고습조 중에 240시간 보유한 후(시험 후)에, 600 N/m 이상의 양호한 접착 강도를 나타내었다. 이에 비하여 비교예 6 및 7에서 이용된 접착제 조성물은 접착 직후 및 85℃, 85% RH의 고온 고습조 중에 240시간 보유한 후(시험 후)에는 접착 강도가 낮아졌다. The adhesive compositions used in Examples 11 to 13 were held at a heating temperature of 150 ° C. for both substrates immediately after adhesion and after 240 hours in a high temperature and high humidity bath at 85 ° C. and 85% RH (after the test). good adhesion strength of at least m. In contrast, the adhesive compositions used in Comparative Examples 6 and 7 had a low adhesive strength immediately after adhesion and after holding for 240 hours in a high temperature and high humidity bath at 85 ° C. and 85% RH (after testing).

[참고예 1 내지 6][Reference Examples 1 to 6]

참고예로서, 실시예 3, 4, 6 및 7 및 비교예 1 및 3의 필름상 접착제 조성물을 폴리이미드 필름 상에 라인폭 25 ㎛, 피치 50 ㎛, 두께 8 ㎛의 구리 회로를 500개 갖는 플렉시블 회로판(FPC)와, 0.2 ㎛의 ITO의 박층을 형성한 유리(두께 1.1 mm, 표면 저항 20 Ω/□)와의 사이에 개재시켰다. 이것을, 열압착 장치(가열 방식: 콘스탄트히트형, 도레이 엔지니어링사 제조)를 이용하여, 150℃, 2 MPa에서 10초간 가열 가압하여 폭 2 mm에 걸쳐서 접속하여 접속체를 제작하였다. 이 접속체의 인접 회로 사이의 저항값을, 접착 직후와, 85℃, 85% RH의 고온 고습조 중에 240시간 보유한 후(시험 후)에 멀티미터로 측정하였다. 저항값은 인접 회로 사이의 저항 37점의 평균으로 나타내었다. As a reference example, the film-like adhesive compositions of Examples 3, 4, 6 and 7 and Comparative Examples 1 and 3 were formed on a polyimide film with 500 copper circuits having a line width of 25 μm, a pitch of 50 μm, and a thickness of 8 μm. It interposed between the circuit board FPC and the glass (thickness 1.1 mm, surface resistance 20 ohms / square) in which the thin layer of ITO of 0.2 micrometer was formed. This was heated and pressurized at 150 degreeC and 2 MPa for 10 second using the thermocompression bonding apparatus (heating system: constant heat type, Toray Engineering Co., Ltd.), and it connected over 2 mm in width, and produced the connection body. The resistance value between adjacent circuits of this connection body was measured with a multimeter immediately after adhesion | attachment, and hold | maintained for 240 hours in 85 degreeC and the high temperature, high humidity tank of 85% RH (after test). The resistance value was represented by the average of 37 resistance points between adjacent circuits.

또한, 이 접속체의 접착 강도를 JIS-Z0237에 준하여 90도 박리법으로 측정하여 평가하였다. 여기서, 접착 강도의 측정 장치는 도요 볼드윈 가부시끼가이샤 제조의 텐실론 UTM-4(박리 속도 50 mm/분, 25℃)를 사용하였다. 이상과 같이 하여 행한 필름상 접착제 조성물의 접속 저항 및 접착 강도의 측정의 결과를 하기 표 5에 나타내었다. Moreover, the adhesive strength of this connector was measured and evaluated by the 90 degree peeling method according to JIS-Z0237. Here, Tensilon UTM-4 (peel rate 50 mm / min, 25 degreeC) by Toyo Baldwin Co., Ltd. was used for the measurement apparatus of adhesive strength. The result of the measurement of the connection resistance and adhesive strength of the film adhesive composition performed as mentioned above is shown in Table 5 below.

Figure pat00035
Figure pat00035

상기에 나타낸 바와 같이, 비교예의 접착제 조성물은 피착체가 PET 필름, PC 필름 및 PEN 필름인 경우, 접속 저항이나 접착 강도가 떨어져 있었다. 그러나, 표 5에 나타낸 바와 같이, 피착체가 ITO 부착 유리인 경우에는, 비교예의 접착제 조성물을 이용한 경우를 포함하는 참고예 1 내지 6의 전부에 있어서, 접착 직후 및 85℃, 85% RH의 고온 고습조 중에 240시간 보유한 후(시험 후)에, 2.5 Ω 이하의 양호한 접속 저항 및 680 N/m 이상의 양호한 접착 강도를 얻을 수 있는 것이 확인되었다. As shown above, in the adhesive composition of the comparative example, when an adherend was a PET film, a PC film, and a PEN film, connection resistance and adhesive strength were inferior. However, as shown in Table 5, when the to-be-adhered body is glass with ITO, in all the reference examples 1-6 including the case where the adhesive composition of the comparative example was used, immediately after adhesion and high temperature, high humidity of 85 degreeC and 85% RH After holding for 240 hours in the tank (after the test), it was confirmed that good connection resistance of 2.5 Ω or less and good adhesive strength of 680 N / m or more can be obtained.

본 실시 형태에 따르면, 폴리에틸렌테레프탈레이트, 폴리카보네이트, 폴리에틸렌나프탈레이트 등의 유기 기재에 대하여 저온의 경화 조건에서도 우수한 접착 강도를 얻을 수 있고, 장시간의 신뢰성 시험(고온 고습 시험) 후에 있어서도 안정된 성능(접착 강도나 접속 저항)을 유지할 수 있는 접착제 조성물, 그것을 이용한 회로 부재의 접속 구조체, 접속 구조체의 제조 방법 및 접착제 조성물의 용도를 제공할 수 있다. According to the present embodiment, excellent adhesive strength can be obtained with respect to organic substrates such as polyethylene terephthalate, polycarbonate and polyethylene naphthalate even under low temperature curing conditions, and stable performance even after a long time reliability test (high temperature and high humidity test). Strength and connection resistance), the connection structure of the circuit member using the same, the manufacturing method of a connection structure, and the use of an adhesive composition can be provided.

10, 20: 접착제 조성물
10C, 20C: 접속 부재
21: 도전성 입자를 포함하지 않는 접착제 조성물
22: 도전성 입자
21C: 도전성 입자를 포함하지 않는 접착제 조성물의 경화물
30: 제1 회로 부재
31: 제1 회로 기판
31a: 주면
32: 제1 접속 단자
40: 제2 회로 부재
41: 제2 회로 기판
41a: 주면
42: 제2 접속 단자
100, 200: 회로 부재의 접속 구조체
10, 20: adhesive composition
10C, 20C: connection member
21: adhesive composition containing no conductive particles
22: conductive particles
21C: Cured product of adhesive composition not containing conductive particles
30: first circuit member
31: first circuit board
31a:
32: first connection terminal
40: second circuit member
41: second circuit board
41a: state
42: second connection terminal
100, 200: connection structure of a circuit member

Claims (12)

주면 상에 제1 접속 단자를 갖는 제1 회로 부재와, 주면 상에 제2 접속 단자를 갖는 제2 회로 부재를 접속하기 위한 접착제 조성물로서,
상기 제1 회로 부재 및/또는 상기 제2 회로 부재는 유리 전이 온도가 200℃ 이하인 열 가소성 수지를 포함하는 기재로 구성되고,
상기 접착제 조성물은 (a) 열 가소성 수지, (b) 라디칼 중합성 화합물 및 (c) 라디칼 중합 개시제를 함유하며, 상기 (b) 라디칼 중합성 화합물이 25 내지 40 mN/m의 임계 표면 장력을 갖는 우레탄(메트)아크릴레이트를 포함하는, 접착제 조성물.
As an adhesive composition for connecting the 1st circuit member which has a 1st connection terminal on a main surface, and the 2nd circuit member which has a 2nd connection terminal on a main surface,
The first circuit member and / or the second circuit member are composed of a substrate containing a thermoplastic resin having a glass transition temperature of 200 ° C. or less,
The adhesive composition contains (a) a thermoplastic resin, (b) a radically polymerizable compound and (c) a radical polymerization initiator, wherein the (b) radically polymerizable compound has a critical surface tension of 25 to 40 mN / m. Adhesive composition containing urethane (meth) acrylate.
주면 상에 제1 접속 단자를 갖는 제1 회로 부재와, 주면 상에 제2 접속 단자를 갖는 제2 회로 부재를 접속하기 위한 접착제 조성물로서,
상기 제1 회로 부재 및/또는 상기 제2 회로 부재는 폴리에틸렌테레프탈레이트, 폴리카보네이트 및 폴리에틸렌나프탈레이트로 이루어지는 군으로부터 선택되는 적어도 1종을 포함하는 기재로 구성되고,
상기 접착제 조성물은 (a) 열 가소성 수지, (b) 라디칼 중합성 화합물 및 (c) 라디칼 중합 개시제를 함유하며, 상기 (b) 라디칼 중합성 화합물이 25 내지 40 mN/m의 임계 표면 장력을 갖는 우레탄(메트)아크릴레이트를 포함하는, 접착제 조성물.
As an adhesive composition for connecting the 1st circuit member which has a 1st connection terminal on a main surface, and the 2nd circuit member which has a 2nd connection terminal on a main surface,
The first circuit member and / or the second circuit member is composed of a substrate including at least one member selected from the group consisting of polyethylene terephthalate, polycarbonate, and polyethylene naphthalate,
The adhesive composition contains (a) a thermoplastic resin, (b) a radically polymerizable compound and (c) a radical polymerization initiator, wherein the (b) radically polymerizable compound has a critical surface tension of 25 to 40 mN / m. Adhesive composition containing urethane (meth) acrylate.
제1항 또는 제2항에 있어서, 상기 우레탄(메트)아크릴레이트가 하기 화학식 (A)로 표시되는 우레탄(메트)아크릴레이트인 접착제 조성물.
Figure pat00036

[화학식 (A) 중, R1 및 R2는 각각 독립적으로 수소 원자 또는 메틸기를 나타내고, R3은 에틸렌기, 프로필렌기, ε-카프로락톤의 개환 화합물로부터 유도되는 기, 또는 하기 화학식 (B)로 표시되는 기를 나타내고, R4는 포화 지방족기 또는 포화 지환식기를 나타내고, R5는 하기 화학식 (B)로 표시되는 기를 나타내고, a는 1 내지 40의 정수를 나타냄]
Figure pat00037

[화학식 (B) 중, R6 및 R7은 각각 독립적으로 탄소수 2 내지 12의 직쇄 또는 분지쇄의 알킬렌기를 나타내고, b는 1 내지 10의 정수를 나타내고, c는 1 내지 25의 정수를 나타내며, 식 중, R6끼리, R7끼리, b끼리 및 c끼리는 각각 동일하거나 상이할 수도 있음]
The adhesive composition of Claim 1 or 2 whose said urethane (meth) acrylate is a urethane (meth) acrylate represented by following General formula (A).
Figure pat00036

[In Formula (A), R <1> and R <2> represents a hydrogen atom or a methyl group each independently, R <3> is group derived from the ring-opening compound of ethylene group, a propylene group, (epsilon) -caprolactone, or following formula (B) Represents a group represented by R 4 represents a saturated aliphatic group or a saturated alicyclic group, R 5 represents a group represented by the following formula (B), and a represents an integer of 1 to 40].
Figure pat00037

[In formula (B), R <6> and R <7> respectively independently represents the C2-C12 linear or branched alkylene group, b represents the integer of 1-10, c represents the integer of 1-25. , Wherein, R 6 , R 7 , b and c may be the same or different.
제1항 또는 제2항에 있어서, 상기 우레탄(메트)아크릴레이트가 지방족 폴리에스테르디올을 이용하여 얻은 것인 접착제 조성물. The adhesive composition according to claim 1 or 2, wherein the urethane (meth) acrylate is obtained using aliphatic polyesterdiol. 제1항 또는 제2항에 있어서, 상기 우레탄(메트)아크릴레이트의 중량 평균 분자량이 8000 이상 25000 미만인 접착제 조성물. The adhesive composition of Claim 1 or 2 whose weight average molecular weights of the said urethane (meth) acrylate are 8000 or more and less than 25000. 제1항 또는 제2항에 있어서, 상기 (b) 라디칼 중합성 화합물이 인산기를 갖는 비닐 화합물과, 상기 인산기를 갖는 비닐 화합물 이외의 라디칼 중합성 화합물을 각각 1종 이상 함유하는, 접착제 조성물. The adhesive composition of Claim 1 or 2 in which the said (b) radically polymerizable compound contains the vinyl compound which has a phosphoric acid group, and 1 or more types of radically polymerizable compounds other than the vinyl compound which has the said phosphoric acid group, respectively. 제1항 또는 제2항에 있어서, 상기 (a) 열 가소성 수지가 페녹시 수지, 폴리우레탄 수지, 폴리에스테르우레탄 수지, 부티랄 수지, 아크릴 수지 및 폴리이미드 수지로 이루어지는 군으로부터 선택되는 적어도 1종을 함유하는, 접착제 조성물. The said (a) thermoplastic resin is at least 1 sort (s) of Claim 1 or 2 chosen from the group which consists of a phenoxy resin, a polyurethane resin, polyesterurethane resin, butyral resin, an acrylic resin, and a polyimide resin. An adhesive composition containing a. 제1항 또는 제2항에 있어서, (d) 도전성 입자를 더 함유하는 접착제 조성물. The adhesive composition of Claim 1 or 2 which further contains (d) electroconductive particle. 주면 상에 제1 접속 단자를 갖는 제1 회로 부재와, 주면 상에 제2 접속 단자를 갖는 제2 회로 부재와, 접속 부재를 구비하는 회로 부재의 접속 구조체로서,
상기 제1 접속 단자 및 상기 제2 접속 단자가 대향하도록, 상기 제1 회로 부재 및 상기 제2 회로 부재가 제1항 또는 제2항에 기재된 접착제 조성물로 이루어지는 상기 접속 부재를 통해 배치됨과 동시에, 상기 제1 접속 단자 및 상기 제2 접속 단자가 전기적으로 접속되어 있고,
상기 제1 회로 부재 및/또는 상기 제2 회로 부재는, 유리 전이 온도가 200℃ 이하인 열 가소성 수지를 함유하는 기재로 구성되어 있는, 회로 부재의 접속 구조체.
As a connection structure of the 1st circuit member which has a 1st connection terminal on a main surface, the 2nd circuit member which has a 2nd connection terminal on a main surface, and the circuit member provided with a connection member,
The first circuit member and the second circuit member are disposed through the connection member made of the adhesive composition according to claim 1 or 2 so that the first connection terminal and the second connection terminal face each other. A first connection terminal and the second connection terminal are electrically connected;
The said 1st circuit member and / or the said 2nd circuit member are the connection structures of a circuit member comprised from the base material containing a thermoplastic resin whose glass transition temperature is 200 degrees C or less.
제9항에 있어서, 상기 유리 전이 온도가 200℃ 이하인 열 가소성 수지는, 폴리에틸렌테레프탈레이트, 폴리카보네이트 및 폴리에틸렌나프탈레이트로 이루어지는 군으로부터 선택되는 적어도 1종인 회로 부재의 접속 구조체. The connecting member for a circuit member according to claim 9, wherein the thermoplastic resin having a glass transition temperature of 200 ° C or less is at least one member selected from the group consisting of polyethylene terephthalate, polycarbonate, and polyethylene naphthalate. 제9항에 있어서, 상기 제1 회로 부재 또는 상기 제2 회로 부재 중 하나의 회로 부재가, 폴리에틸렌테레프탈레이트, 폴리카보네이트 및 폴리에틸렌나프탈레이트로 이루어지는 군으로부터 선택되는 적어도 1종을 함유하는 기재로 구성되고,
상기 제1 회로 부재 또는 제2 회로 부재 중 다른 하나의 회로 부재가 폴리이미드 수지 및 폴리에틸렌테레프탈레이트로 이루어지는 군으로부터 선택되는 적어도 1종을 함유하는 기재로 구성되는, 회로 부재의 접속 구조체.
The circuit member according to claim 9, wherein the circuit member of the first circuit member or the second circuit member is composed of a substrate containing at least one member selected from the group consisting of polyethylene terephthalate, polycarbonate, and polyethylene naphthalate. ,
The other structural member of the said 1st circuit member or the 2nd circuit member consists of a base material containing at least 1 sort (s) chosen from the group which consists of a polyimide resin and a polyethylene terephthalate.
주면 상에 제1 접속 단자를 갖는 제1 회로 부재와, 주면 상에 제2 접속 단자를 갖는 제2 회로 부재를 제1항 또는 제2항에 기재된 접착제 조성물을 통해 상기 제1 접속 단자 및 상기 제2 접속 단자가 대향하도록 배치하는 공정과,
상기 접착제 조성물을 가열하여 경화시켜, 상기 제1 회로 부재와 상기 제2 회로 부재를 접속하는 공정
을 구비하는, 회로 부재의 접속 구조체의 제조 방법.
The 1st circuit member which has a 1st connection terminal on a main surface, and the 2nd circuit member which has a 2nd connection terminal on a main surface are made into the said 1st connection terminal and the said agent via the adhesive composition of Claim 1 or 2. The process of arrange | positioning so that 2 connection terminals oppose,
Heating and curing the adhesive composition to connect the first circuit member and the second circuit member
The manufacturing method of the bonded structure of a circuit member provided with the.
KR1020137006450A 2010-07-26 2011-05-30 Adhesive composition, connection structure, and method for producing connection structure KR20130042017A (en)

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JP6102105B2 (en) * 2012-07-19 2017-03-29 日立化成株式会社 Film-like circuit connection material and circuit connection structure
JP6176910B2 (en) * 2012-09-24 2017-08-09 デクセリアルズ株式会社 Method for manufacturing connection structure
JP2015135878A (en) * 2014-01-16 2015-07-27 デクセリアルズ株式会社 Connection body, method for manufacturing connection body, connection method and anisotropic conductive adhesive
JP6645730B2 (en) * 2014-01-28 2020-02-14 デクセリアルズ株式会社 Connection body and method for manufacturing connection body
JP6330346B2 (en) * 2014-01-29 2018-05-30 日立化成株式会社 Adhesive composition, electronic member using adhesive composition, and method for manufacturing semiconductor device
DE102014204465A1 (en) * 2014-03-11 2015-09-17 Henkel Ag & Co. Kgaa UV-reactive hotmelt adhesive for lamination of transparent films
JP6646258B2 (en) * 2016-02-26 2020-02-14 住友金属鉱山株式会社 Laminated body etching method and printed wiring board manufacturing method using the same
JP6899069B2 (en) * 2016-06-27 2021-07-07 株式会社スリーボンド Thermosetting conductive adhesive
CN106852014A (en) * 2017-02-07 2017-06-13 广东小天才科技有限公司 Novel bonding structure and bonding method
CN106905909B (en) * 2017-03-20 2019-11-22 苏州瀚海新材料有限公司 In-situ polymerization curing polyester adhesive based on lactone and preparation method thereof
KR102631317B1 (en) * 2017-09-11 2024-02-01 가부시끼가이샤 레조낙 Adhesive film for circuit connection and manufacturing method thereof, manufacturing method of circuit connection structure, and adhesive film accommodation set
WO2020110785A1 (en) * 2018-11-29 2020-06-04 日立化成株式会社 Film-like adhesive agent for semiconductor, semiconductor device, and method for manufacturing same
JPWO2020184583A1 (en) * 2019-03-13 2020-09-17
US11919251B2 (en) * 2019-11-15 2024-03-05 Mitsubishi Electric Corporation Adhesive member, adhesion method, and method for manufacturing electronic device casing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2429269B1 (en) * 2006-07-21 2013-01-16 Hitachi Chemical Company, Ltd. Circuit connection material, circuit member connecting structure and method of connecting circuit member
JP2008195852A (en) * 2007-02-14 2008-08-28 Hitachi Chem Co Ltd Film adhesive composition and joined structure in circuit terminal using the same composition
CN102199404B (en) * 2007-05-09 2013-12-04 日立化成株式会社 Film-like circuit connecting material and connection structure for circuit member
CN105295764A (en) * 2008-04-17 2016-02-03 日立化成工业株式会社 Use of ADHESIVE COMPOSITION in preparing connection material, ADHESIVE FOR CIRCUIT CONNECTION, CONNECTED STRUCTURE, AND SEMICONDUCTOR DEVICE
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JP2009277769A (en) * 2008-05-13 2009-11-26 Hitachi Chem Co Ltd Circuits connecting material and connection structure of circuit member using the same
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