KR20130031864A - Light emitting diode having plurality of semiconductor stacks - Google Patents

Abstract

PURPOSE: A light emitting diode having a plurality of semiconductor stacks is provided to prevent the generation of a metal etching by-product. CONSTITUTION: Light emitting cells(30) are formed in the upper part of a substrate(21). The light emitting cells include a first conductive semiconductor layer(25), an active layer(27), and a second conductive semiconductor layer(29). An insulating layer(71) covering the light emitting cells is formed. A reflecting layer(73) and a protective metal layer(75) are formed on the second conductive semiconductor layer.

Description

LIGHT EMITTING DIODE HAVING PLURALITY OF SEMICONDUCTOR STACKS}

The present invention relates to a light emitting device and a method of manufacturing the same, and more particularly to a light emitting diode having a plurality of semiconductor laminated structure.

Gallium nitride-based light emitting diodes are widely used as display devices and backlights. In addition, the light emitting diode consumes less power and has a longer lifespan than existing light bulbs or fluorescent lamps, thereby replacing its incandescent lamps and fluorescent lamps, thereby expanding its use area for general lighting.

In general, gallium nitride based nitride semiconductors are grown on heterogeneous substrates such as sapphire or silicon carbide. The nitride semiconductor is mainly grown on the c plane (0001) of such a substrate to exhibit piezoelectric properties. Due to the piezoelectric properties, a strong polarization field is induced in the active region of the multi-quantum well structure. Therefore, it is difficult to increase the thickness of the light emitting layer, and the light emitting recombination rate is reduced, thereby limiting the improvement of the light emission output.

Recently, gallium nitride crystals grown on a c-plane sapphire substrate in order to prevent the occurrence of such a polarization field are removed and gallium nitride having a crystal plane other than the c plane, for example, a plane (11-20) or m plane (1-100). The technology for processing a surface nitride semiconductor using a substrate and using it as a growth substrate for a nitride semiconductor or using an m surface silicon carbide substrate or an r surface sapphire substrate as a growth substrate has been studied. Nitride semiconductors grown on either the a or m plane have non-polar or semi-polar characteristics, and thus, light output is expected to be improved compared to polar light emitting diodes exhibiting polarization fields.

On the other hand, a light emitting diode generally emits light by a forward current, and requires supply of a direct current. There has been attempted to connect a plurality of light emitting cells in antiparallel connection or to operate a plurality of light emitting cells under an AC power supply using a bridge rectifier in consideration of the characteristics of light emitting diodes operating under forward currents, . In addition, a light emitting diode capable of outputting high power and high efficiency light under a high voltage DC power supply by forming a plurality of light emitting cells on a single substrate and connecting them in series has been developed. These light emitting diodes form a plurality of light emitting cells on a single substrate and connect the light emitting cells through wiring, thereby emitting light of high output and high efficiency under AC or DC power.

In order to use the plurality of light emitting cells to connect to a high voltage AC or DC power source, it is necessary to electrically separate the plurality of light emitting cells and connect them through wires. Since the conventional sapphire substrate is an insulating substrate, when using a nitride semiconductor grown on the sapphire substrate, it is not a problem to electrically separate the plurality of light emitting cells. However, since GaN substrates generally exhibit the characteristics of n-type semiconductors, when a plurality of light emitting cells are formed using nonpolar or semipolar nitride semiconductor layers grown on a GaN substrate, the light emitting cells are electrically connected by the GaN substrate. There is a problem.

To solve this problem, after growing the nitride semiconductor layers on the GaN substrate, it may be considered to separate the GaN substrate. Background Art Conventionally, after growing nitride semiconductor layers on a sapphire substrate, a technique for separating the sapphire substrate using a laser lift off process is generally known. However, GaN substrates and nitride semiconductor layers grown thereon are similar in physical and chemical properties, making it difficult to separate nitride semiconductor layers from GaN substrates.

An object of the present invention is to provide a light emitting device having a plurality of nonpolar light emitting cells and a method of manufacturing the same.

Another object of the present invention is to provide a light emitting device having a plurality of nonpolar light emitting cells and a method of manufacturing the same using a GaN substrate as a growth substrate.

In order to solve the above technical problem, the present invention provides a light emitting device having a plurality of non-polar light emitting cells and a method of manufacturing the same.

Method of manufacturing a light emitting device having a plurality of non-polar light emitting cells according to an aspect of the present invention,

Preparing a GaN substrate having a nonpolar or semipolar crystal plane whose upper surface forms an angled bridge with respect to the c plane; Growing nitride semiconductor layers on the substrate;

Patterning the nitride semiconductor layers to form light emitting cells separated from each other, wherein the substrate is partially removed below the isolation regions between the light emitting cells to form recess regions; Forming an insulating layer filling the recess regions; At least partially removing the substrate to expose the insulating layer.

The substrate may be removed so that the light emitting cells are electrically separated by using an insulating layer filling the recess regions of the substrate.

Here, the "non-polar" light emitting cell means a light emitting cell formed of a nitride semiconductor which does not cause a polarization electric field by a piezoelectric field, and the "semi-polar" light emitting cell has a relatively small polarization electric field compared to a nitride semiconductor whose growth surface is c plane. It means a light emitting cell formed of a nitride semiconductor. Unless specifically stated below, the term "nonpolar" is used to include "semipolar".

The GaN substrate may be at least partially removed using a lapping technique such as polishing.

The nitride semiconductor layers may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. In addition, the active layer may have a multi-quantum well structure.

After the substrate is at least partially removed, a roughened surface may be formed on the surface of the substrate or the nitride semiconductor layer exposed between the insulating layers. The roughened surface increases the light extraction efficiency.

In some embodiments, the light emitting cells are respectively

A first conductivity type semiconductor layer: a second conductivity type semiconductor layer on a portion of the first conductivity type semiconductor layer; And an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer. In addition, wirings for electrically connecting the light emitting cells may be formed before removing the substrate. In addition, before forming the wirings, a reflective layer may be formed on the light emitting cells.

On the other hand, the method includes forming an interlayer insulating layer covering the wirings before removing the GaN substrate; The method may further include bonding a second substrate on the interlayer insulating layer. After the second substrate is bonded, the GaN substrate is at least partially removed.

Meanwhile, before forming the wirings, a side insulating layer covering side surfaces of the light emitting cells may be formed. The side insulating layer is formed on the insulating layer to insulate the wirings from the side surfaces of the light emitting cells.

In some embodiments, an insulating layer filling the recess regions may cover the light emitting cells. In addition, the insulating layer has openings in other regions of the first conductive semiconductor layer and the second conductive semiconductor layer. In this case, the method may include forming bonding metals electrically connecting neighboring light emitting cells through the openings of the insulating layer before removing the substrate; The method may further include bonding a second substrate to the bonding metals.

The method may further include forming a reflective layer on the second conductivity type semiconductor layer before forming the bonding metals. Furthermore, a protective metal layer may be formed to cover the reflective layer.

In some embodiments, the light emitting cells are respectively

A first conductivity type semiconductor layer: a second conductivity type semiconductor layer on the first conductivity type semiconductor layer; And an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The first conductive semiconductor layer and the second conductive semiconductor layer may have the same area.

In addition, the method may further include forming electrodes electrically connected to the light emitting cells before removing the substrate. The electrodes each extend over an insulating layer filling the recess regions.

Further, forming the electrodes may include forming a reflective layer on the second conductivity type semiconductor layer; Covering the reflective layer, it may include forming a protective metal layer extending on the insulating layer. The protective metal layer prevents the reflective layer from being exposed to the outside, thereby preventing oxidation or etching damage of the reflective layer.

In addition, the method, before removing the substrate,

Forming an interlayer insulating layer covering the electrodes; The method may further include bonding a second substrate to the interlayer insulating layer.

In addition, the method, after removing the substrate,

Patterning an insulating layer filling the recess regions to form openings exposing the electrodes; The method may further include forming wirings connecting adjacent light emitting cells to each other. Each of the wires is electrically connected to the electrode through an opening formed at one end thereof in the insulating layer.

According to another aspect of the present invention, a light emitting device having a plurality of non-polar light emitting cells includes a substrate; A plurality of nonpolar or semipolar light emitting cells spaced apart from each other on the substrate, the light emitting cells including an upper semiconductor layer of a first conductivity type, an active layer, and a lower semiconductor layer of a second conductivity type; GaN-based material layers covering upper semiconductor layers of the first conductivity type of the light emitting cells; An insulating layer filling a space between the GaN-based material layers; Wires electrically connecting the light emitting cells to the light emitting cells under the insulating layer; And an interlayer insulating layer covering the wirings and interposed between the substrate and the light emitting cells. The remaining portions of the GaN substrate are electrically insulated from each other by the insulating layer, so that the plurality of light emitting cells are electrically insulated from each other.

The GaN-based material layer may be a remaining portion or a buffer layer of the GaN growth substrate. The buffer layer is a nitride semiconductor layer grown with an undoped or impurity doped material on the GaN growth substrate, and is a layer exposed on the top as the GaN growth substrate is removed. The buffer layer may be either a low temperature buffer layer or a high temperature buffer layer which is commonly used.

In addition, the GaN-based material layers may each have a roughened surface.

The light emitting device may further include a reflective layer interposed between the interlayer insulating layer and the lower semiconductor layer of the second conductivity type, and may further include a protective metal layer covering the reflective layer. In addition, the wirings may connect the protective metal layer of one light emitting cell and the first conductive semiconductor layer of the light emitting cell adjacent thereto.

According to another aspect of the present invention, a light emitting device having a plurality of non-polar light emitting cells includes a substrate; A plurality of nonpolar light emitting cells spaced apart from each other on the substrate, each of the plurality of light emitting cells including an upper semiconductor layer of a first conductivity type, an active layer, and a lower semiconductor layer of a second conductivity type; Electrodes spaced apart from each other and positioned between the substrate and the light emitting cells, the electrodes electrically connected to corresponding lower semiconductor layers of the second conductivity type, respectively, and extending toward neighboring light emitting cells; An insulating layer filling the space between the light emitting cells above the electrodes and having openings exposing the electrodes; And wirings electrically connecting the light emitting cells, one end of which is electrically connected to an upper semiconductor layer of one light emitting cell, and the other end of which is electrically connected to a lower semiconductor layer of a neighboring light emitting cell through an opening of the insulating layer. Wires electrically connected to the electrodes connected to each other.

The light emitting device may further include GaN-based material layers covering upper semiconductor layers of the first conductivity type of the light emitting cells. The GaN-based material layers may each have an opening that exposes the upper semiconductor layer of the first conductivity type, and the interconnections may be electrically connected to the upper semiconductor layers of the first conductivity type through the openings.

The GaN-based material layer may be a remaining portion or a buffer layer of the GaN growth substrate.

Meanwhile, the upper semiconductor layers of the first conductivity type may have rough surfaces on their surfaces. When the GaN-based material layers cover the upper semiconductor layer of the first conductivity type, each of the GaN-based material layers may have a rough surface on its surface.

The electrodes may each include a reflective layer and a protective metal layer covering the reflective layer, and wires are electrically connected to the protective metal layer.

According to still another aspect of the present invention, a light emitting diode having a plurality of semiconductor stacked structures is disclosed. This light emitting diode includes: a substrate; An interlayer insulating layer on the substrate; A first nitride semiconductor stacked structure disposed on the interlayer insulating layer and including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer; A second nitride semiconductor stacked structure disposed on the interlayer insulating layer and spaced apart from the first nitride semiconductor stacked structure, the second nitride semiconductor stacked structure including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer; Wires electrically connected to the first nitride semiconductor laminate and the second nitride semiconductor laminate; And a side insulating layer covering side surfaces of the first nitride semiconductor laminate structure and the second nitride semiconductor laminate structure to separate the wirings from side surfaces of the first and second nitride semiconductor laminates. In addition, the second nitride semiconductor stacked structure is connected in anti-parallel to the first nitride semiconductor stacked structure by the wirings.

According to the present invention, a light emitting device having a plurality of nonpolar light emitting cells can be provided. In particular, a GaN substrate may be used as a growth substrate to provide a light emitting device having a plurality of nonpolar light emitting cells. Furthermore, since the exposure of the metal is prevented during the separation of the light emitting cells, it is possible to prevent the generation of metal etching byproducts, and in particular, to prevent oxidation or etching damage of the reflective layer.

1 to 7 are cross-sectional views illustrating a method of manufacturing a light emitting device having a plurality of non-polar light emitting cells according to an embodiment of the present invention.
8 to 10 are cross-sectional views illustrating a method of manufacturing a light emitting device having a plurality of non-polar light emitting cells according to another embodiment of the present invention.
11 to 15 are cross-sectional views illustrating a method of manufacturing a light emitting device having a plurality of non-polar light emitting cells according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 to 8 are cross-sectional views illustrating a method of forming a plurality of nonpolar light emitting cells according to an embodiment of the present invention.

Referring to FIG. 1, nitride semiconductor layers 25, 27, and 29 are grown on a substrate 21. The substrate 21 is a GaN single crystal substrate, the upper surface of which is a crystal surface forming an pier with respect to the c surface. The upper surface of the substrate 21 may be, for example, a surface, m surface, or r surface, but is not particularly limited, and may be another crystal surface.

The substrate 21 may be prepared by separating GaN single crystals grown on a c-plane sapphire substrate by HVPE (hydrate vapor deposition) technology from a sapphire substrate, and then cutting along a crystal plane forming a pier to the c-plane. In addition, the substrate 21 may be grown on an r-plane sapphire substrate or an m-plane silicon carbide substrate and then separated from the sapphire or silicon carbide substrate. In this case, the substrate 21 becomes a surface GaN substrate.

The nitride semiconductor layers 25, 27, and 29 include a first conductive semiconductor layer 25, an active layer 27, and a second conductive semiconductor layer 29. Each of these nitride semiconductor layers may be a single layer or multiple layers, and in particular, the active layer 27 may have a multi-quantum well structure.

A nitride layer and / or a buffer layer (not shown) may be first grown before the first conductivity type nitride semiconductor layer 25 is grown. The buffer layer may be grown as a GaN-based material layer or GaN. The buffer layer is formed to assist the growth of the nitride semiconductor layers 25, 27, and 29, and may be an undoped or impurity doped layer.

The first conductive semiconductor layer 25, the active layer 27, and the second conductive semiconductor layer 29 may be formed of a III-N-based compound semiconductor, and may be metal-organic chemical vapor deposition (MOCVD) or molecular beam deposition (molecular). It may be grown by a process such as beam epitaxy (MBE). The nitride semiconductor layers are grown along the growth surface of the GaN substrate 21, and thus are grown to the nonpolar nitride semiconductor according to the growth surface of the GaN substrate 21.

The first conductivity type and the second conductivity type may be n-type and p-type or p-type and n-type. Preferably, the first conductivity type is n-type, and the second conductivity type is p-type.

Referring to FIG. 2, nitride semiconductor layers including the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are patterned to form a plurality of light emitting cells 30. Each of the light emitting cells 30 may include a first conductive semiconductor layer 25, a second conductive semiconductor layer 29 and a first conductive semiconductor layer on a portion of the first conductive semiconductor layer. And an active layer 27 interposed between the second conductive semiconductor layer. These light emitting cells 30 are formed by removing the second conductive semiconductor layer 29 and the active layer 27 so as to expose different regions of the first conductive semiconductor layer 25, respectively.

Meanwhile, while forming the light emitting cells, the substrate 21 under the isolation regions from which the nitride semiconductor layers are removed is also partially etched to form recess regions 21a. The recess regions 21a may be spaced apart from each other in a stripe shape, or may be connected to each other in a mesh shape.

Referring to FIG. 3, an insulating layer 31 filling the recess regions 21a is formed. The insulating layer 31 may fill a region between the light emitting cells 30 under the upper surface of the first conductive semiconductor layer 25. The insulating layer 31 may be formed of an insulating material such as, for example, SOG, silicon oxide film, or silicon nitride film. After the insulating material is coated or deposited on the light emitting cells, the insulating material 31 may be formed by partially removing the insulating material so that the top surface of the first conductive semiconductor layer 25 is exposed.

Referring to FIG. 4, a side insulating layer 33 covering side surfaces of the light emitting cells is formed on the insulating layer 31. The side insulating layer 33 has openings for exposing the upper portions of the light emitting cells 30 and has openings for exposing the top surface of the first conductivity type semiconductor layer 25.

On the other hand, a reflective layer 35 is formed on each of the light emitting cells 30, for example, on the second conductive semiconductor layer 29. The reflective layer may be formed of Ag or Al, for example. In addition, a protective metal layer 37 may be formed to cover the reflective layer 31. The protective metal layer 37 covers the reflective layer to prevent diffusion of the reflective layer and further prevents oxidation of the reflective layer. The protective metal layers 37 may be formed of a single layer or multiple layers, for example, Ni, Ti, Ta, Pt, W, Cr, Pd or the like.

Thereafter, wires 39 are formed to electrically connect the light emitting cells 30. The wirings 39 connect the light emitting cells 30 in series by connecting the first conductive semiconductor layer and the second conductive semiconductor layer of neighboring light emitting cells. The wires may connect the protective metal layer 37 and the first conductive semiconductor layer 25, and may be electrically connected to the second conductive semiconductor layer 29 through the protective metal layer 37 and the reflective layer 35. . The reflective layer and / or the protective metal layer may be omitted, and the wirings 39 may be directly connected to the second conductive semiconductor layer 29.

Referring to FIG. 5, after the wirings 39 are formed, an interlayer insulating layer 41 covering the light emitting cells 30 is formed. The interlayer insulating layer 41 prevents the light emitting cells from being shorted to each other.

A second substrate 51 is bonded on the interlayer insulating layer 41. The second substrate 41 is not particularly limited, but is preferably formed of a material having a similar thermal expansion coefficient to that of the GaN substrate 21. The second substrate 61 forms a bonding metal 43 on the interlayer insulating layer 41, forms a bonding metal 45 on the second substrate 61, and then bonds these metals 43 to the second substrate 61. , 45) may be formed by joining each other.

Referring to FIG. 6, after the second substrate 51 is bonded, the GaN substrate 21 is at least partially removed. The GaN substrate 21 may be removed by a polishing or etching process. In this case, the insulating layer 31 filling the recess regions is exposed.

The GaN substrate 21 has similar physical and chemical properties to the nitride semiconductor layer grown thereon. Therefore, in the prior art, it was difficult to separate the nitride semiconductor layer and the GaN substrate 21. However, according to the present invention, the interface between the GaN substrate 21 and the nitride semiconductor layer can be easily known by the insulating layer 31. Accordingly, an end point can be easily set in a polishing or etching process, thereby partially or completely removing the GaN substrate 21.

When the GaN substrate 21 is partially removed, the remaining portions of the GaN substrate cover the first nitride semiconductor layers 25. Meanwhile, when the GaN substrate 21 is completely removed, a buffer layer (not shown) may cover the first nitride semiconductor layers 25, or the first nitride semiconductor layers 25 may be exposed. .

Referring to FIG. 7, after removing the GaN substrate 21, the rough surface R is formed on the remaining portions (or the buffer layer) or the first nitride semiconductor layers 25 of the remaining GaN substrate 21. do. The roughened surface R may be formed by PEC (photoelectric chemistry) etching or the like.

Accordingly, a light emitting device having a plurality of nonpolar light emitting cells spaced apart from each other on the second substrate 51 is completed. The light emitting device includes light emitting cells 30 connected in series by wires 39, and thus may be driven by a high voltage DC power supply. In addition, the light emitting device may include a plurality of arrays connected in series by wires 39, and may be driven by a high voltage AC power source by connecting the arrays in anti-parallel.

8 to 10 are cross-sectional views illustrating a method of manufacturing a light emitting device having a plurality of non-polar light emitting cells according to another embodiment of the present invention.

Referring to FIG. 8, after the light emitting cells 30 of FIG. 2 are formed, an insulating layer 71 covering the light emitting cells is formed. The insulating layer 71 fills the recess regions of the substrate 21 and also covers the side surfaces of the light emitting cells 30. The insulating layer 71 has openings in other regions of the first conductive semiconductor layer 25 and the second conductive semiconductor layer 29.

The insulating layer 71 may be formed by filling the recess regions, forming an insulating material covering the light emitting cells, and then patterning the insulating material. Alternatively, the insulating material may be formed by forming an insulating material filling the recess regions and then forming a side insulating layer (not shown) covering the side surfaces of the light emitting cells.

The reflective layer 73 and the protective metal layer 75 may be formed on the second conductive semiconductor layer 29, and the openings on the first conductive semiconductor layer 25 may be filled with a metal material.

Referring to FIG. 9, bonding metals 77 are formed to electrically connect the first conductive semiconductor layer 25 of one light emitting cell and the second conductive semiconductor layer 29 of a light emitting cell adjacent thereto. . The bonding metals 77 are spaced apart from each other to connect the light emitting cells in series. The bonding metal 77 is formed on the insulating layer 71 to electrically connect metal materials formed in the openings of the insulating layer 71. Alternatively, the bonding metal 77 may electrically connect the first conductive semiconductor layer 25 and the second conductive semiconductor layer 29 through the openings.

Meanwhile, bonding metals 79 are formed on the second substrate 81. Bonding metals 79 are formed corresponding to the bonding metals 77 and are bonded onto the bonding metals 77.

Referring to FIG. 10, as described with reference to FIG. 6, the substrate 21 is at least partially removed. In addition, after the substrate 21 is removed, rough surfaces may be formed on the remaining portions (or buffer layers) or the first conductivity-type semiconductor layers 25 of the substrate 21.

According to the present embodiment, a light emitting device in which light emitting cells are electrically connected by bonding metals 77 is provided. According to the electrical connection of the bonding metals 77, various light emitting devices that may be driven under high voltage DC or AC power may be provided.

11 to 15 are cross-sectional views illustrating a method of manufacturing a light emitting device having a plurality of non-polar light emitting cells according to another embodiment of the present invention.

Referring to FIG. 11, after the nitride semiconductor layers 25, 27, and 29 of FIG. 1 are formed, the light emitting cells 90 separated from each other are formed by patterning the nitride semiconductor layers. Each of the light emitting cells 90 may include a first conductive semiconductor layer 25, a second conductive semiconductor layer 29 disposed on the first conductive semiconductor layer, and the first conductive semiconductor layer and the first conductive semiconductor layer 25. An active layer 27 is interposed between the two conductive semiconductor layers. The first conductive semiconductor layer 25 and the second conductive semiconductor layer 29 may have the same width and area as shown.

The nitride nucleus layer and / or buffer layer 23 may be first grown and shown herein before the nitride semiconductor layers 25, 27, 29 are grown on the GaN growth substrate 21. The buffer layer 23 may also be separated during patterning of the nitride semiconductor layers.

Meanwhile, during the formation of the light emitting cells, the substrate 21 under the isolation regions from which the nitride semiconductor layers are removed is also partially etched to form recess regions. The recess regions may be spaced apart from each other in a stripe shape, or may be connected to each other in a mesh shape. When the buffer layer 23 is relatively thick, the recess regions may be defined in the buffer layer 23.

Subsequently, an insulating layer 91 is formed to fill the recess regions. The insulating layer 91 may fill a region between the light emitting cells. Meanwhile, upper surfaces of the light emitting cells 90 are exposed. The insulating layer 91 may be formed of an insulating material such as, for example, SOG, silicon oxide, or silicon nitride. After the insulating material is coated or deposited on the light emitting cells, the insulating material 91 may be formed by partially removing the insulating material to expose the top surface of the second conductive semiconductor layer 29. Alternatively, after forming an insulating layer filling the recess regions, a side insulating layer covering the side surfaces of the light emitting cells 90 may be formed.

Electrodes E are formed on the exposed second conductive semiconductor layer. Each of the electrodes E is electrically connected to a second conductive semiconductor layer of the light emitting cell 90 and extends toward a neighboring light emitting cell. The electrodes E may include a reflective layer 93 formed on the second conductive semiconductor layer 29 and a protective metal layer 95 covering the reflective layer 93. In this case, the protective metal layer 95 extends toward the neighboring light emitting cells. Accordingly, the protective metal layer 95 extends over the insulating layer 91. However, the electrodes E are spaced apart from each other.

Referring to FIG. 12, an interlayer insulating layer 101 is formed on the electrodes E. Referring to FIG. The interlayer insulating layer 101 covers the electrodes E and may fill gaps between the electrodes E. FIG. The material of the interlayer insulating layer is not particularly limited, and may be formed of a silicon oxide film or a silicon nitride film.

A bonding metal 103 is formed on the interlayer insulating layer 101, and a bonding metal 105 is formed on the second substrate 111. The bonding metal 103 may be formed of, for example, AuSn (80 / 20wt%). The second substrate 111 is not particularly limited, but is preferably a substrate having the same thermal expansion coefficient as the substrate 21.

The substrate 111 is bonded on the interlayer insulating layer 101 by bonding the bonding metals 103 and 105 to face each other.

Referring to FIG. 13, as described with reference to FIG. 6, the substrate 21 is at least partially removed. After the substrate 21 is removed, the GaN-based material layer, for example, remaining portions of the growth substrate 21 or the buffer layer 23 or the first conductivity type semiconductor layers 25 are exposed. In addition, the insulating layer 91 filling the recess regions is exposed.

Referring to FIG. 14, openings 91a are formed to pattern the exposed insulating layer 91 to expose the electrodes E. Referring to FIG. The openings 91a expose the electrodes E, for example, the protective metal layer 95, extending toward the neighboring light emitting cells. In addition, openings 92a exposing the first conductive semiconductor layers 25 by patterning the remaining portions of the substrate 21 and the buffer layer 23 covering the second conductive semiconductor layers 23. ) Can be formed.

Referring to FIG. 15, wirings 113 electrically connecting the light emitting cells 90 are formed. Each of the wires 113 has one end electrically connected to the first conductivity-type semiconductor layer 25 of one light emitting cell, the upper semiconductor layer 25 in FIG. 15, and the other end of the wiring 113 15 is electrically connected to the second conductive semiconductor layer 29, that is, the electrode E electrically connected to the lower semiconductor layer 29 in FIG. 15. The remaining portions of the substrate 21 and the buffer layer 23 may remain on the first conductivity-type semiconductor layers 25 of the light emitting cells 90, and each of the interconnections 113 may have one end thereof. May be electrically connected to the first conductivity-type semiconductor layers 25 through the openings 92a.

A series array of light emitting cells or at least two series arrays may be formed on the substrate 111 by the wirings 113. Accordingly, a light emitting device that can be driven under a high voltage direct current or alternating current power supply can be provided. In addition, a series array may be formed by the wirings 113 on the substrate 111, and the series array may be driven by an AC power supply by being connected to a bridge rectifier formed on the substrate 111. The bridge rectifier may also be formed by connecting the light emitting cells 90 by the wirings 113.

GaN-based material layers covering the first conductivity-type semiconductor layers 25, such as the remaining portions of the substrate 21 or the buffer layer 23, are roughened before or after the interconnections 113 are formed. The surface R may be formed, and when the first conductive semiconductor layers 25 are exposed, the rough surface R may be formed on the first conductive semiconductor layers 25.

In addition, before forming the interconnections 65, pads (not shown) may be used to form the first conductivity-type semiconductor layers 25 and / or the electrodes E to improve adhesion or ohmic contact characteristics of the interconnections. It can be formed on.

Although the embodiments of the present invention have been described above by way of example, the present invention is not limited to the above-described embodiments and may be variously modified and changed by those skilled in the art without departing from the spirit of the present invention. . Such modifications and variations are included in the scope of the present invention as defined in the following claims.

Claims (13)

Board;
An interlayer insulating layer on the substrate;
A first nitride semiconductor stacked structure disposed on the interlayer insulating layer and including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer;
A second nitride semiconductor stacked structure disposed on the interlayer insulating layer, spaced apart from the first nitride semiconductor stacked structure, and including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer;
Wires electrically connected to the first nitride semiconductor laminate and the second nitride semiconductor laminate; And
A side insulating layer covering side surfaces of the first nitride semiconductor laminate structure and the second nitride semiconductor laminate structure to separate the wirings from side surfaces of the first and second nitride semiconductor laminate structures;
And the second nitride semiconductor stacked structure is connected in anti-parallel to the first nitride semiconductor stacked structure by the wirings. The light emitting diode of claim 1, wherein an upper surface of the first nitride semiconductor laminate has a light extraction surface and includes a rough surface. The light emitting diode of claim 2, wherein the roughened surface is formed of the same material as that of the growth substrate on which the semiconductor layers of the first nitride semiconductor laminate structure are grown. The light emitting diode of claim 2, wherein the roughened surface is formed on the remaining portion of the remaining growth substrate. The light emitting diode of claim 4, wherein the growth substrate is a GaN substrate. The light emitting diode of claim 2, wherein the light exiting through the light extraction surface is light generated by a non-polar or semi-polar nitride semiconductor layer. The light emitting diode of claim 6, further comprising an insulating layer positioned between the first nitride semiconductor laminate and the second nitride semiconductor laminate. 8. The light emitting diode of claim 7, further comprising a bonding metal positioned between the substrate and the interlayer insulating layer. The light emitting diode of claim 8, further comprising a reflective layer positioned between the interlayer insulating layer and the first nitride semiconductor laminate. The light emitting diode of claim 9, further comprising a protective metal layer covering the reflective layer under the reflective layer. The light emitting diode of claim 10, wherein an upper surface of the insulating layer positioned between the first and second nitride semiconductor stacked structures is positioned at the same height as the upper surface of the light extraction surface. 12. The light emitting diode of claim 11, wherein the side insulating layer is partially located between the first nitride semiconductor laminate and the interlayer insulating layer, and between the second nitride semiconductor laminate and the interlayer insulating layer. The semiconductor device according to any one of claims 1 to 12, wherein the first nitride semiconductor laminate structure and the second nitride semiconductor laminate structure each include nitride semiconductor layers, and the nitride semiconductor layers each have a crystal main surface other than the C surface. Light emitting diodes, characterized in that.

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