KR101457203B1 - Light emitting diode having plurality of semiconductor stacks - Google Patents

Abstract

A light emitting diode having a plurality of semiconductor laminated structures is disclosed. The light emitting diode includes a substrate; An interlayer insulating layer disposed on the substrate; A first nitride semiconductor multilayer structure located above the interlayer insulating layer and including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer; A second nitride semiconductor multilayer structure located above the interlayer insulating layer and spaced apart from the first nitride semiconductor multilayer structure and including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer; Wirings electrically connected to the first nitride semiconductor multilayer structure and the second nitride semiconductor multilayer structure; And a side insulating layer covering the sides of the first nitride semiconductor laminated structure and the second nitride semiconductor laminated structure and separating the wirings from the side surfaces of the first and second nitride semiconductor laminated structures. Further, the second nitride semiconductor laminated structure is connected in anti-parallel to the first nitride semiconductor laminated structure by the wirings.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting diode having a plurality of semiconductor laminated structures,

The present invention relates to a light emitting device and a method of manufacturing the same, and more particularly to a light emitting diode having a plurality of semiconductor laminated structures.

Gallium nitride based light emitting diodes are widely used as display devices and backlights. In addition, the light emitting diode has a smaller consumed electric power and longer life than conventional light bulbs or fluorescent lamps, and has been widely used for general lighting purposes in place of incandescent lamps and fluorescent lamps.

Generally, a nitride semiconductor of the gallium nitride series is grown on a different substrate such as sapphire or silicon carbide. The nitride semiconductor is mainly grown on the c-plane (0001) of such a substrate and exhibits piezoelectric characteristics. It is difficult to increase the thickness of the light emitting layer, and the emission recombination rate is reduced to limit the improvement of the light emitting output.

In recent years, in order to prevent such a polarization electric field, a gallium nitride crystal grown on a c-plane sapphire substrate is removed and a crystal plane other than the c-plane, for example, a gallium nitride crystal having an a- A technique for growing a-plane nitride semiconductor using a m-plane silicon carbide substrate or an r-plane sapphire substrate as a growth substrate is being studied. The nitride semiconductor grown on the a-plane or the m-plane has non-polar or semi-polar characteristics and is expected to have improved light output compared to polarized light emitting diodes exhibiting a polarization electric field.

On the other hand, light emitting diodes generally emit light by a forward current and require supply of a direct current. There has been attempted to connect a plurality of light emitting cells in antiparallel connection or operate a plurality of light emitting cells under an alternating current power supply using a bridge rectifier in consideration of the characteristics of light emitting diodes operating under forward currents, . Further, a plurality of light emitting cells are formed on a single substrate, and the light emitting diodes are capable of outputting light with high output and high efficiency under a high voltage direct current (DC) power source by connecting them in series. These light emitting diodes form a plurality of light emitting cells on a single substrate and connect the light emitting cells through wiring, so that light with high output and high efficiency can be emitted under AC or DC power.

In order to use a plurality of light emitting cells connected to a high-voltage AC or DC power source, it is necessary to electrically isolate a plurality of light emitting cells and connect them through wirings. Since the conventional sapphire substrate is an insulating substrate, when a nitride semiconductor grown on a sapphire substrate is used, it is not a problem to electrically isolate a plurality of light emitting cells. However, since the GaN substrate generally exhibits characteristics of an n-type semiconductor, when a plurality of light emitting cells are formed using non-polar or semi-polar nitride semiconductor layers grown on a GaN substrate, the light emitting cells are electrically connected There is a problem.

To solve this problem, it may be considered to separate the GaN substrate after growing the nitride semiconductor layers on the GaN substrate. Conventionally, a technique of growing nitride semiconductor layers on a sapphire substrate and separating the sapphire substrate using a laser lift-off process is generally known. However, since the GaN substrate and the nitride semiconductor layers grown thereon are similar in physical and chemical properties, it is difficult to separate the nitride semiconductor layers from the GaN substrate.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting device having a plurality of nonpolar light emitting cells and a method of manufacturing the same.

Another problem to be solved by the present invention is to provide a light emitting device having a plurality of non-polar light emitting cells using a GaN substrate as a growth substrate and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a light emitting device having a plurality of non-polar light emitting cells, and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a method of manufacturing a light emitting device having a plurality of non-polar light emitting cells,

Preparing a GaN substrate having a non-polar or semi-polar crystal plane in which the upper surface forms a piercing angle with respect to the c-plane; Growing nitride semiconductor layers on the substrate;

Patterning the nitride semiconductor layers to form light emitting cells separated from each other, wherein the substrate is partially removed under the isolation regions between the light emitting cells to form recess regions; Forming an insulating layer filling the recessed areas; And at least partially removing the substrate to expose the insulating layer.

The substrate can be removed such that the light emitting cells are electrically separated by using an insulating layer filling the recessed regions of the substrate.

Herein, the "non-polar" light emitting cell means a light emitting cell formed of a nitride semiconductor in which a polarization electric field due to a piezoelectric field is not induced, and a " Quot; means a light emitting cell formed of a nitride semiconductor. Unless specifically stated below, the term "nonpolar" is used to include "anti-polar ".

The GaN substrate may be at least partially removed using a lapping technique such as polishing.

The nitride semiconductor layers include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. Furthermore, the active layer may have a multiple quantum well structure.

After the substrate is at least partially removed, a roughened surface may be formed on the surface of the substrate or the nitride semiconductor layer exposed between the insulating layers. The roughened surface increases the light extraction efficiency.

In some embodiments, the light emitting cells are

A first conductivity type semiconductor layer: a second conductivity type semiconductor layer located on a partial region of the first conductivity type semiconductor layer; And an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer. In addition, wirings for electrically connecting the light emitting cells may be formed before removing the substrate. Also, before forming the wirings, a reflection layer may be formed on the light emitting cells.

On the other hand, the method includes: forming an interlayer insulating layer covering the wirings before removing the GaN substrate; And bonding the second substrate on the interlayer insulating layer. After the second substrate is bonded, the GaN substrate is at least partially removed.

Meanwhile, before forming the wires, a side insulating layer may be formed to cover the side surfaces of the light emitting cells. The side insulating layer is formed on the insulating layer to insulate the wirings from the sides of the light emitting cells.

In some embodiments, an insulating layer filling the recessed areas may cover the light emitting cells. In addition, the insulating layer has openings on other regions of the first conductive type semiconductor layer and on the second conductive type semiconductor layer. At this time, the method may include forming bonding metals electrically connecting neighboring light emitting cells through openings of the insulating layer, before removing the substrate; And bonding the second substrate to the bonding metals.

The method may further include forming a reflective layer on the second conductive type semiconductor layer before forming the bonding metals. Furthermore, a protective metal layer covering the reflective layer may be formed.

In some embodiments, the light emitting cells are

A first conductivity type semiconductor layer: a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer; And an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Here, the first conductive semiconductor layer and the second conductive semiconductor layer may have the same area.

In addition, the method may further comprise forming electrodes electrically connected to the light emitting cells before removing the substrate. The electrodes each extend on an insulating layer filling the recessed regions.

Further, forming the electrodes may include forming a reflective layer on the second conductive type semiconductor layer; And forming a protective metal layer covering the reflective layer and extending over the insulating layer. The protective metal layer prevents the reflective layer from being exposed to the outside, thereby preventing oxidation or etching damage of the reflective layer.

Further, the method may further include, before removing the substrate,

Forming an interlayer insulating layer covering the electrodes; And bonding the second substrate to the interlayer insulating layer.

The method may further include, after removing the substrate,

Patterning an insulating layer filling the recessed areas to form openings exposing the electrodes; And forming wirings for connecting neighboring light emitting cells. Each of the wirings is electrically connected to the electrode through an opening formed in the insulating layer at one end thereof.

A light emitting device having a plurality of non-polar light emitting cells according to another aspect of the present invention includes: a substrate; A plurality of non-polar or semi-polar light emitting cells spaced apart from each other on the substrate, the light emitting cells including a top conductive layer of a first conductive type, an active layer, and a bottom conductive layer of a second conductive type; GaN-based material layers covering the first conductive upper semiconductor layers of the light emitting cells; An insulating layer filling a space between the GaN-based material layers; Wires for electrically connecting the light emitting cells to the light emitting cells under the insulating layer; And an interlayer insulating layer covering the wirings and interposed between the substrate and the light emitting cells. The remaining portions of the GaN substrate are electrically insulated from each other by the insulating layer, so that the plurality of light emitting cells are electrically insulated from each other.

The GaN-based material layer may be a remaining portion of the GaN growth substrate or a buffer layer. The buffer layer is a nitride semiconductor layer grown on the GaN growth substrate with an undoped or an impurity doped material, and is exposed at the top as the GaN growth substrate is removed. The buffer layer may be either a commonly used low-temperature buffer layer or a high-temperature buffer layer.

In addition, each of the GaN-based material layers may have a roughened surface on its surface.

The light emitting device may further include a reflective layer interposed between the interlayer insulating layer and the lower conductive layer of the second conductive type, and may further include a protective metal layer covering the reflective layer. In addition, the wirings may connect the protective metal layer of one light emitting cell and the first conductive semiconductor layer of the adjacent light emitting cell.

A light emitting device having a plurality of non-polar light emitting cells according to another aspect of the present invention includes: a substrate; A plurality of non-polar light emitting cells spaced apart from each other on the substrate, the plurality of light emitting cells including an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type; Electrodes disposed between the substrate and the light emitting cells, the electrodes being electrically connected to the corresponding lower semiconductor layers of the second conductivity type and extending to the neighboring light emitting cells, respectively; An insulating layer filling the space between the light emitting cells on the electrodes and having openings exposing the electrodes; And one end of each of the wires is electrically connected to the upper semiconductor layer of one light emitting cell and the other end thereof is electrically connected to the lower semiconductor layer of the adjacent light emitting cell through the opening of the insulating layer, Which are electrically connected to the electrodes connected to the electrodes.

The light emitting device may further include GaN-based material layers covering the first conductive semiconductor layers of the light emitting cells. Each of the GaN-based material layers has an opening for exposing the upper semiconductor layer of the first conductivity type, and the wirings may be electrically connected to the upper semiconductor layers of the first conductivity type through the openings.

The GaN-based material layer may be a remaining portion of the GaN growth substrate or a buffer layer.

On the other hand, the upper semiconductor layers of the first conductivity type may have rough surfaces on their surfaces. When the GaN-based material layers cover the first conductive type upper semiconductor layer, the GaN-based material layers may have rough surfaces on their surfaces.

The electrodes may include a reflective layer and a protective metal layer covering the reflective layer, respectively, and wirings are electrically connected to the protective metal layer.

According to still another aspect of the present invention, a light emitting diode having a plurality of semiconductor laminated structures is disclosed. The light emitting diode includes a substrate; An interlayer insulating layer located on the substrate; A first nitride semiconductor laminated structure located above the interlayer insulating layer and including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer; A second nitride semiconductor multilayer structure located above the interlayer dielectric layer and spaced apart from the first nitride semiconductor multilayer structure, the second nitride semiconductor multilayer structure including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer; Wirings electrically connected to the first nitride semiconductor multilayer structure and the second nitride semiconductor multilayer structure; And a side insulating layer covering the sides of the first nitride semiconductor laminated structure and the second nitride semiconductor laminated structure and separating the wirings from the side surfaces of the first and second nitride semiconductor laminated structures. The second nitride semiconductor multilayer structure is connected in anti-parallel to the first nitride semiconductor multilayer structure by the wirings.

According to the present invention, it is possible to provide a light emitting device having a plurality of non-polar light emitting cells. In particular, it is possible to provide a light emitting device having a plurality of non-polar light emitting cells by using a GaN substrate as a growth substrate. Further, since the metal is prevented from being exposed during the separation of the light emitting cells, the occurrence of the metal etching by-products can be prevented, and oxidation or etching damage of the reflection layer can be prevented in particular.

1 to 7 are cross-sectional views illustrating a method of manufacturing a light emitting device having a plurality of non-polar light emitting cells according to an embodiment of the present invention.
8 to 10 are cross-sectional views illustrating a method of manufacturing a light emitting device having a plurality of non-polar light emitting cells according to another embodiment of the present invention.
11 to 15 are cross-sectional views for explaining a method of manufacturing a light emitting device having a plurality of non-polar light emitting cells according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, and the like of the components may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

1 to 8 are cross-sectional views illustrating a method of forming a plurality of nonpolar light emitting cells according to an embodiment of the present invention.

Referring to FIG. 1, nitride semiconductor layers 25, 27, 29 are grown on a substrate 21. The substrate 21 is a GaN single crystal substrate, and its upper surface is a crystal face forming a pier with respect to the c-plane. The upper surface of the substrate 21 may be, for example, an a-plane, an m-plane, an r-plane, or the like, but is not particularly limited and may be another crystal plane.

The substrate 21 can be prepared by separating a GaN single crystal grown by a HVPE (hydride vapor phase epitaxy) technique on a c-plane sapphire substrate from a sapphire substrate, and then cutting along a crystal plane forming a pier with respect to the c-plane. In addition, the substrate 21 may be prepared on an r-plane sapphire substrate or an m-plane silicon carbide substrate, and then separated from a sapphire or silicon carbide substrate. In this case, the substrate 21 becomes an a-plane GaN substrate.

The nitride semiconductor layers 25, 27 and 29 include a first conductive semiconductor layer 25, an active layer 27 and a second conductive semiconductor layer 29. Each of these nitride semiconductor layers may be a single layer or multiple layers, and in particular, the active layer 27 may be a multiple quantum well structure.

A nitride layer and / or a buffer layer (not shown) may be grown before the first conductive nitride semiconductor layer 25 is grown. The buffer layer may be formed of a GaN-based material layer or GaN. The buffer layer is formed to help growth of the nitride semiconductor layers 25, 27, 29, and may be an undoped or an impurity doped layer.

The first conductivity type semiconductor layer 25, the active layer 27 and the second conductivity type semiconductor layer 29 are formed of a compound semiconductor of the III-N series and are formed by metal organic chemical vapor deposition (MOCVD) beam epitaxy (MBE)). The nitride semiconductor layers are grown along the growth surface of the GaN substrate 21, and thus grown as the nonpolar nitride semiconductor according to the growth surface of the GaN substrate 21. [

The first conductivity type and the second conductivity type may be n-type and p-type, or p-type and n-type. Preferably, the first conductivity type is n-type and the second conductivity type is p-type.

Referring to FIG. 2, the nitride semiconductor layers including the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are patterned to form a plurality of light emitting cells 30. The light emitting cells 30 may include a first conductive semiconductor layer 25, a second conductive semiconductor layer 29 located on a partial region of the first conductive semiconductor layer 29, And an active layer 27 interposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The light emitting cells 30 are formed by removing the second conductivity type semiconductor layer 29 and the active layer 27 to expose different regions of the first conductivity type semiconductor layer 25, respectively.

Meanwhile, during the formation of the light emitting cells, the substrate 21 under the isolation regions where the nitride semiconductor layers are removed is partially etched to form the recess regions 21a. The recessed regions 21a may be spaced apart from each other in a stripe shape or may be connected to each other in a mesh shape.

Referring to FIG. 3, an insulating layer 31 filling the recessed regions 21a is formed. The insulating layer 31 may fill a region between the light emitting cells 30 under the upper surface of the first conductive semiconductor layer 25. The insulating layer 31 may be formed of an insulating material such as SOG, a silicon oxide film, a silicon nitride film, or the like. After the insulating material is coated or deposited on the light emitting cells, the insulating layer 31 may be formed by partially removing the insulating material so that the upper surface of the first conductive type semiconductor layer 25 is exposed.

Referring to FIG. 4, a side insulating layer 33 is formed on the insulating layer 31 to cover the sides of the light emitting cells. The side insulating layer 33 has openings exposing the tops of the light emitting cells 30 and also has openings exposing the top surface of the first conductivity type semiconductor layer 25.

On the other hand, a reflection layer 35 is formed on each of the light emitting cells 30, for example, on the second conductivity type semiconductor layer 29. The reflective layer may be formed of, for example, Ag or Al. Also, a protective metal layer 37 may be formed to cover the reflective layer 31. The protective metal layer 37 covers the reflective layer to prevent diffusion of the reflective layer and also prevents oxidation of the reflective layer. The protective metal layers 37 may be formed of a single layer or a multilayer, and may be formed of, for example, Ni, Ti, Ta, Pt, W, Cr, Pd or the like.

Then, wirings 39 for electrically connecting the light emitting cells 30 are formed. The wirings 39 connect the first conductive semiconductor layer of the neighboring light emitting cells and the second conductive semiconductor layer to connect the light emitting cells 30 in series. The wirings may connect the protective metal layer 37 and the first conductivity type semiconductor layer 25 and may be electrically connected to the second conductivity type semiconductor layer 29 through the protective metal layer 37 and the reflective layer 35 . Meanwhile, the reflective layer and / or the protective metal layer may be omitted, and the wirings 39 may be directly connected to the second conductive type semiconductor layer 29.

Referring to FIG. 5, after the wires 39 are formed, an interlayer insulating layer 41 covering the light emitting cells 30 is formed. The interlayer insulating layer 41 prevents the light emitting cells from being shorted to each other.

And a second substrate 51 is bonded on the interlayer insulating layer 41. The second substrate 41 is preferably formed of a material having a thermal expansion coefficient similar to that of the GaN substrate 21, although not particularly limited thereto. The second substrate 61 is formed with a bonding metal 43 on the interlayer insulating layer 41 and a bonding metal 45 on the second substrate 61. The bonding metal 43 , 45) to each other.

Referring to FIG. 6, after the second substrate 51 is bonded, the GaN substrate 21 is at least partially removed. The GaN substrate 21 may be removed by a polishing or etching process. At this time, the insulating layer 31 filling the recessed regions is exposed.

The GaN substrate 21 has similar physical and chemical properties to the nitride semiconductor layer grown thereon. Therefore, it is difficult to separate the nitride semiconductor layer from the GaN substrate 21 in the prior art. However, according to the present invention, the interface between the GaN substrate 21 and the nitride semiconductor layer can be easily recognized by the insulating layer 31. [ Therefore, the end point can be easily set in the polishing or etching process, so that the GaN substrate 21 can be partially or completely removed.

When the GaN substrate 21 is partially removed, the remaining portions of the GaN substrate cover the first nitride semiconductor layers 25. On the other hand, when the GaN substrate 21 is completely removed, a buffer layer (not shown) may cover the first nitride semiconductor layers 25, or the first nitride semiconductor layers 25 may be exposed .

7, after the GaN substrate 21 is removed, the remaining portions (or the buffer layer) of the remaining GaN substrate 21 or the roughened surface R of the first nitride semiconductor layers 25 are formed do. The roughened surface (R) can be formed by PEC (photoelectrochemical) etching or the like.

Thus, a light emitting device having a plurality of non-polar light emitting cells spaced from each other on the second substrate 51 is completed. The light emitting device includes light emitting cells 30 connected in series by wires 39, and thus can be driven by a high voltage direct current power source. In addition, the light emitting device may include a plurality of arrays connected in series by wires 39, and may be driven by a high voltage AC power source by connecting the arrays in anti-parallel.

8 to 10 are cross-sectional views illustrating a method of manufacturing a light emitting device having a plurality of non-polar light emitting cells according to another embodiment of the present invention.

Referring to FIG. 8, after the light emitting cells 30 of FIG. 2 are formed, an insulating layer 71 covering the light emitting cells is formed. The insulating layer 71 fills the recessed regions of the substrate 21 and also covers the side surfaces of the light emitting cells 30. [ The insulating layer 71 has openings on other regions of the first conductivity type semiconductor layer 25 and on the second conductivity type semiconductor layer 29.

The insulating layer 71 may be formed by filling the recessed regions, forming an insulating material covering the light emitting cells, and then patterning the insulating material. Alternatively, after forming the insulating material filling the recessed regions, a side insulating layer (not shown) may be formed to cover the side surfaces of the light emitting cells.

A reflective layer 73 and a protective metal layer 75 may be formed on the second conductivity type semiconductor layer 29. The openings on the first conductivity type semiconductor layer 25 may be filled with a metal material.

9, bonding metals 77 for electrically connecting the first conductivity type semiconductor layer 25 of one light emitting cell and the second conductivity type semiconductor layer 29 of the adjacent light emitting cell are formed . The bonding metals 77 are spaced apart from each other to connect the light emitting cells in series. The bonding metal 77 is formed on the insulating layer 71 to electrically connect the metal materials formed in the openings of the insulating layer 71. Alternatively, the bonding metal 77 may electrically connect the first conductive semiconductor layer 25 and the second conductive semiconductor layer 29 through the openings.

On the other hand, bonding metals 79 are formed on the second substrate 81. Bonding metals 79 are formed corresponding to the bonding metals 77 and are bonded on the bonding metals 77.

Referring to Fig. 10, the substrate 21 is at least partially removed, as described with reference to Fig. Further, after the substrate 21 is removed, a rough surface may be formed on the remaining portions (or the buffer layer) of the substrate 21 or the first conductivity type semiconductor layers 25.

According to the present embodiment, a light emitting element in which light emitting cells are electrically connected by bonding metals 77 is provided. According to the electrical connection of the bonding metals 77, various light emitting devices which can be driven under a high voltage direct current or alternating current power supply can be provided.

11 to 15 are cross-sectional views for explaining a method of manufacturing a light emitting device having a plurality of non-polar light emitting cells according to another embodiment of the present invention.

Referring to FIG. 11, after the nitride semiconductor layers 25, 27, 29 of FIG. 1 are formed, the nitride semiconductor layers are patterned to form light emitting cells 90 separated from each other. The light emitting cells 90 may include a first conductivity type semiconductor layer 25, a second conductivity type semiconductor layer 29 disposed on the first conductivity type semiconductor layer, And an active layer 27 interposed between the two-conductivity-type semiconductor layers. The first conductive semiconductor layer 25 and the second conductive semiconductor layer 29 may have the same width and area as shown.

The nitride core layer and / or the buffer layer 23 may be grown first before growing the nitride semiconductor layers 25, 27, 29 on the GaN growth substrate 21. The buffer layer 23 may also be separated during patterning of the nitride semiconductor layers.

Meanwhile, during the formation of the light emitting cells, the substrate 21 under the isolation regions where the nitride semiconductor layers are removed is partially etched to form recess regions. The recessed regions may be spaced apart from each other in a stripe shape, or may be connected to each other in a mesh shape. If the buffer layer 23 is relatively thick, the recess regions may be defined in the buffer layer 23.

Then, an insulating layer 91 filling the recessed regions is formed. The insulating layer 91 may fill a region between the light emitting cells. Meanwhile, the upper surface of the light emitting cells 90 is exposed. The insulating layer 91 may be formed of an insulating material such as SOG, a silicon oxide film, a silicon nitride film, or the like. After the insulating material is applied or deposited on the light emitting cells, the insulating layer 91 may be formed by partially removing the insulating material so that the upper surface of the second conductive type semiconductor layer 29 is exposed. Alternatively, a side insulating layer may be formed to cover the side surfaces of the light emitting cells 90 after forming the insulating layer filling the recessed regions.

Electrodes E are formed on the exposed second conductive type semiconductor layer. The electrodes E are electrically connected to the second conductivity type semiconductor layer of the light emitting cell 90 and extend to the neighboring light emitting cells. The electrodes E may include a reflective layer 93 formed on the second conductive semiconductor layer 29 and a protective metal layer 95 covering the reflective layer 93. At this time, the protective metal layer 95 extends to the neighboring light emitting cell. Accordingly, the protective metal layer 95 extends over the insulating layer 91. [ However, the electrodes E are spaced apart from each other.

Referring to FIG. 12, an interlayer insulating layer 101 is formed on the electrodes E. The interlayer insulating layer 101 covers the electrodes E and can fill gaps between the electrodes E. [ The material of the interlayer insulating layer is not particularly limited, and may be formed of a silicon oxide film or a silicon nitride film.

A bonding metal 103 is formed on the interlayer insulating layer 101 and a bonding metal 105 is formed on the second substrate 111. The bonding metal 103 may be formed of, for example, AuSn (80/20 wt%). The second substrate 111 is not particularly limited, but is preferably a substrate having the same thermal expansion coefficient as that of the substrate 21.

The substrate 111 is bonded to the interlayer insulating layer 101 by bonding the bonding metals 103 and 105 to face each other.

Referring to Fig. 13, the substrate 21 is at least partially removed, as described with reference to Fig. After the substrate 21 is removed, the remaining portions of the GaN-based material layer, for example, the growth substrate 21, or the buffer layer 23 or the first conductivity type semiconductor layers 25 are exposed. In addition, the insulating layer 91 filling the recessed regions is exposed.

Referring to FIG. 14, openings 91a for exposing the electrodes E are formed by patterning the exposed insulating layer 91. Referring to FIG. The openings 91a expose the electrodes E, for example, the protective metal layer 95 extending to the neighboring light emitting cells. The remaining portions of the substrate 21 covering the second conductivity type semiconductor layers 23 and a portion of the buffer layer 23 are patterned to form openings 92a for exposing the first conductivity type semiconductor layers 25 ) Can be formed.

Referring to FIG. 15, wirings 113 for electrically connecting the light emitting cells 90 are formed. One end of each of the wirings 113 is electrically connected to the first conductive semiconductor layer 25 of one light emitting cell and the upper semiconductor layer 25 in Fig. 15, and the other end thereof is electrically connected to the light emitting cell And is electrically connected to the second conductive type semiconductor layer 29, that is, the electrode E electrically connected to the lower semiconductor layer 29 in FIG. The remaining portions of the substrate 21 and the buffer layer 23 may remain on the first conductivity type semiconductor layers 25 of the light emitting cells 90. The wirings 113 may be formed on the first conductive semiconductor layers 25, May be electrically connected to the first conductive semiconductor layers 25 through the openings 92a.

A serial array of light emitting cells or at least two serial arrays may be formed on the substrate 111 by the wires 113. Thereby, a light emitting element which can be driven under a high voltage direct current or alternating current power supply can be provided. In addition, a series array is formed on the substrate 111 by the wirings 113, and the series array may be driven by an AC power source by being connected to a bridge rectifier formed on the substrate 111. [ The bridge rectifier may also be formed by connecting the light emitting cells 90 with the wirings 113.

The GaN-based material layers that cover the first conductivity type semiconductor layers 25 before or after forming the wirings 113, for example, the remaining portions of the substrate 21 or the buffer layer 23, A surface R may be formed and a rough surface R may be formed on the first conductivity type semiconductor layers 25 when the first conductivity type semiconductor layers 25 are exposed.

Pads (not shown) may be formed on the first conductivity type semiconductor layers 25 and / or the electrodes E to improve adhesion or ohmic contact characteristics of the wirings before forming the wirings 65. [ Lt; / RTI >

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. . Such variations and modifications are intended to be within the scope of the invention as defined in the following claims.

Claims (13)

Board;
An interlayer insulating layer located on the substrate;
A first nitride semiconductor laminated structure located above the interlayer insulating layer and including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer;
A second nitride semiconductor multilayer structure located above the interlayer dielectric layer and spaced apart from the first nitride semiconductor multilayer structure, the second nitride semiconductor multilayer structure including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer;
Wirings electrically connected to the first nitride semiconductor multilayer structure and the second nitride semiconductor multilayer structure;
A side insulating layer covering the side surfaces of the first nitride semiconductor laminated structure and the second nitride semiconductor laminated structure and spaced from the side surfaces of the first and second nitride semiconductor laminated structures;
And a bonding metal located between the substrate and the interlayer insulating layer,
Wherein the second nitride semiconductor multilayer structure is connected in anti-parallel to the first nitride semiconductor multilayer structure by the wires. The light emitting diode according to claim 1, wherein the upper surface of the first nitride semiconductor multilayer structure is a light extracting surface and includes a roughened surface. [3] The light emitting diode of claim 2, wherein the roughened surface is formed of a material similar to a growth substrate on which the semiconductor layers of the first nitride semiconductor laminated structure are grown. The light emitting diode of claim 2, wherein the roughened surface is formed in a remaining portion of the remaining growth substrate. The light emitting diode according to claim 4, wherein the growth substrate is a GaN substrate. The light emitting diode of claim 2, wherein light emitted through the light extracting surface is light generated by a non-polar or semi-polar nitride semiconductor layer. 7. The light emitting diode of claim 6, further comprising an insulating layer positioned between the first nitride semiconductor laminated structure and the second nitride semiconductor laminated structure. delete The light emitting diode according to claim 1, further comprising a reflective layer disposed between the interlayer insulating layer and the first nitride semiconductor laminated structure. The light emitting diode according to claim 9, further comprising a protective metal layer covering a reflective layer below the reflective layer. 11. The light emitting diode of claim 10, wherein the upper surface of the insulating layer located between the first and second nitride semiconductor multilayer structures is located at the same height as the upper surface of the light extracting surface. 12. The light emitting diode according to claim 11, wherein the side insulating layer is partially located between the first nitride semiconductor laminated structure and the interlayer insulating layer, and between the second nitride semiconductor laminated structure and the interlayer insulating layer. The nitride semiconductor light emitting device according to any one of claims 1 to 7 and 9 to 12, wherein each of the first nitride semiconductor multilayer structure and the second nitride semiconductor multilayer structure comprises nitride semiconductor layers, And a crystal plane of the light emitting diode.

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