KR20120093588A - 범프 및 이를 갖는 반도체 장치 - Google Patents

범프 및 이를 갖는 반도체 장치 Download PDF

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Publication number
KR20120093588A
KR20120093588A KR1020110013241A KR20110013241A KR20120093588A KR 20120093588 A KR20120093588 A KR 20120093588A KR 1020110013241 A KR1020110013241 A KR 1020110013241A KR 20110013241 A KR20110013241 A KR 20110013241A KR 20120093588 A KR20120093588 A KR 20120093588A
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KR
South Korea
Prior art keywords
bump
semiconductor device
metal pillar
semiconductor
metal
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Application number
KR1020110013241A
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English (en)
Inventor
배진호
박명근
Original Assignee
에스케이하이닉스 주식회사
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Application filed by 에스케이하이닉스 주식회사 filed Critical 에스케이하이닉스 주식회사
Priority to KR1020110013241A priority Critical patent/KR20120093588A/ko
Priority to US13/339,123 priority patent/US20120205797A1/en
Priority to CN201210033503XA priority patent/CN102646657A/zh
Publication of KR20120093588A publication Critical patent/KR20120093588A/ko

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Abstract

범프 및 이를 갖는 반도체 장치가 개시되어 있다. 개시된 범프는, 구조체 상에 형성되는 금속 필라 및 상기 금속 필라의 측면을 감싸는 확산방지부재를 포함하는 것을 특징으로 한다.
본 발명에 따르면, 확산방지부재에 의하여 금속 필라의 금속 성분 확산이 억제되므로 금속 필라간 전기적인 숏트 및 퓨즈 불량이 방지되는 효과가 있다.

Description

범프 및 이를 갖는 반도체 장치{BUMP AND SEMICONDUCTOR DEVICE HAVING THE SAME}
본 발명은 범프 및 이를 갖는 반도체 장치에 관한 것이다.
플립 칩 패키지는 고밀도 패키징이 가능한 본딩 프로세스로, 반도체 칩의 입출력 패드 위에 전기적 도선 역할을 하는 솔더 범프(solder bump)와 같은 돌출부를 형성시켜 반도체 칩과 기판을 연결하는 것으로 반도체의 동작 속도를 향상시킬 수 있는 장점을 갖는다.
또한, 플립 칩 패키지는 반도체 칩에서 입출력 패드의 위치를 필요에 따라 결정할 수 있으므로 회로 설계를 단순화시키고 회로선에 의한 저항이 감소하여 소요 전력을 줄일 수 있어 전기적 특성이 우수하고, 반도체 칩의 배면이 외부로 노출되어 있어 열적 특성이 우수하며, 작은 형태의 패키지를 구현할 수 있고, 솔더 자기정렬(Self-Alignment) 특성 때문에 본딩이 용이한 장점이 있다.
그러나, 솔더 범프 접합을 위한 리플로우(reflow)시 표면 장력으로 인해 솔더 범프가 구형으로 변형되기 때문에 솔더 범프를 100㎛ 이상으로 구현하기 힘들다. 또한, 파인 피치(fine pitch)에서 솔더 범프를 적용하게 되면 접합시 솔더 범프가 구형으로 변하면서 인접한 솔더 범프들이 서로 붙어버려, 200㎛ 이하의 파인 피치로는 구현할 수 없다.
이에, 솔더 범프 대신 금속 필라(pillar)를 사용하는 기술이 도입되었다.
그러나, 금속 필라를 사용할 경우 금속 필라의 금속 성분이 외부로 확산(out diffusion)되어 인접 필라들이 전기적으로 숏트(short)되거나 반도체 칩의 퓨즈에 영향을 주어 퓨즈 불량이 발생되는 문제점이 있다.
본 발명의 목적은, 금속 필라의 금속 성분 확산을 방지하기에 적합한 범프 및 이를 갖는 반도체 장치를 제공하는데, 있다.
본 발명의 일 견지에 따른 범프는, 구조체 상에 형성되는 금속 필라 및 상기 금속 필라의 측면을 감싸는 확산방지부재를 포함하는 것을 특징으로 한다.
상기 금속 필라는 구리, 니켈, 금 및 알루미늄 중 적어도 어느 하나를 포함하고, 상기 확산방지부재는 Ti, TiN, Ta, TaN, TiSiN 및 WN 중 적어도 어느 하나를 포함하는 것을 특징으로 한다.
상기 구조체와 금속 필라 사이에 형성되는 추가 확산방지부재를 더 포함하거나, 상기 금속 필라 상에 형성되는 접속 금속층을 더 포함하는 것을 특징으로 한다.
본 발명의 다른 견지에 따른 반도체 장치는, 제1면 및 상기 제1면에 대향하는 제2면을 가지며 상기 제1면에 제1전극 패드가 형성된 제1구조체 및 상기 제1전극 패드 상에 형성되는 범프를 구비하며, 상기 범프는 상기 제1전극 패드 상에 형성되는 금속 필라 및 상기 금속 필라의 측면을 감싸는 확산방지부재를 포함하는 것을 특징으로 한다.
상기 금속 필라는 구리, 니켈, 금 및 알루미늄 중 적어도 어느 하나를 포함하고, 상기 확산방지부재는 Ti, TiN, Ta, TaN, TiSiN 및 WN 중 적어도 어느 하나를 포함하는 것을 특징으로 한다.
상기 범프는 상기 금속 필라 상에 형성되는 접속 금속층을 더 포함하는 것을 특징으로 한다.
상기 반도체 장치는, 상기 제1구조체와 상기 범프 사이에 형성되는 UBM을 더 포함하며, 상기 범프는 상기 UBM과 금속 필라 사이에 형성되는 추가 확산방지부재를 더 포함하는 것을 특징으로 한다.
상기 제1구조체는 반도체 소자 또는 인쇄회로기판 중 어느 하나인 것을 특징으로 한다. 여기서, 반도체 소자는 이미지 센서, 메모리 반도체, 시스템 반도체, 수동 소자, 능동 소자 및 센서 반도체 중 선택된 어느 하나이고, 인쇄회로기판은 모듈 기판, 패키지 기판, 메인 보드 플렉서블 기판 중 선택된 어느 하나인 것을 특징으로 한다.
상기 제1구조체는 상기 제1면에 퓨즈를 더 포함하는 것을 특징으로 한다.
상기 제1구조체의 제1면과 마주하는 제3면 및 상기 제3면과 대향하는 제4면을 가지며 상기 제3면에 상기 범프와 전기적으로 연결되는 제2전극 패드가 형성된 제2구조체를 더 포함하는 것을 특징으로 한다. 상기 제2구조체는 각각 반도체 소자 또는 인쇄회로기판 중 어느 하나인 것을 특징으로 하며, 여기서, 반도체 소자는 이미지 센서, 메모리 반도체, 시스템 반도체, 수동 소자, 능동 소자 및 센서 반도체 중 선택된 어느 하나이고, 인쇄회로기판은 모듈 기판, 패키지 기판, 메인 보드 플렉서블 기판 중 선택된 어느 하나인 것을 특징으로 한다.
본 발명에 따르면, 확산방지부재에 의하여 금속 필라의 금속 성분 확산이 억제되므로 금속 필라간 전기적인 숏트 및 퓨즈 불량이 방지된다.
도 1은 본 발명의 제1실시예에 따른 범프를 도시한 단면도이다.
도 2는 본 발명의 제2실시예에 따른 범프를 도시한 단면도이다.
도 3은 본 발명의 제1실시예에 따른 반도체 장치를 도시한 단면도이다.
도 4는 본 발명의 제2실시예에 따른 반도체 장치를 도시한 단면도이다.
도 5는 본 발명의 제3실시예에 따른 반도체 장치를 도시한 단면도이다.
이하, 첨부된 도면들을 참조하여 본 발명의 바람직한 실시예들을 상세히 설명하도록 한다.
도 1은 본 발명의 제1실시예에 따른 범프를 도시한 단면도이다.
도 1에 도시된 범프(20)는, 예를 들어, 반도체 칩 또는 인쇄회로기판과 같은 구조체(10)의 전기적인 연결 수단으로 사용하기에 적합하다.
도 1을 참조하면, 구조체(10)는 예를 들어 이미지 센서, 메모리 반도체, 시스템 반도체, 수동소자, 능동 소자 및 센서 반도체 등의 반도체 소자일 수 있다. 이와 다르게, 구조체(10)는 모듈 기판, 패키지 기판, 플렉서블 기판, 메인 보드 등의 인쇄회로기판일 수도 있다.
범프(20)는 구조체(10) 상에 형성되며, 금속 필라(21) 및 확산방지부재(22)를 포함한다. 그 외에, 접속 금속층(23)을 더 포함한다.
금속 필라(21)는 구조체(10) 상에 형성된다. 금속 필라(21)는, 예를 들어, 원기둥 또는 3각 이상의 각기둥 형상을 갖는다. 금속 필라(21)는 구조체(10)와 마주하는 일단부(21A), 일단부(21A)과 대향하는 타단부(21B), 일단부(21A) 및 타단부(21B)을 연결하는 측면(21C)들을 갖는다. 금속 필라(21)는 구리, 니켈, 금 및 알루미늄 중 적어도 어느 하나를 포함한다.
확산방지부재(22)는 금속 필라(21)의 측면(21C)을 감싸도록 형성된다. 확산방지부재(22)는 금속 필라(21)의 금속 성분이 외부로 확산되는 현상을 방지하는 역할을 하는 것으로, Ti, TiN, Ta, TaN, TiSiN 및 WN 중 적어도 어느 하나를 포함한다.
접속 금속층(23)은 금속 필라(21)의 타단부(21B) 상에 형성되며, 금(Au), 주석(Sn) 및 솔더 중 적어도 어느 하나를 포함한다. 본 실시예에서, 확산방지부재(22)는 금속 필라(21)의 측면(21C)뿐만 아니라 접속 금속층(23)의 측면에도 형성된다.
도 2는 본 발명의 제2실시예에 따른 범프를 도시한 단면도이다.
본 발명의 제 2 실시예에 따른 범프는, 추가 확산방지부재(24)를 제외하면 앞서 도 1을 통해 설명된 제 1 실시예에 따른 범프와 동일한 구성을 갖는다. 따라서, 동일한 구성요소에 대한 중복 설명은 생략하기로 하며, 동일 구성요소에 대해서는 동일한 명칭 및 동일한 참조 부호를 부여하기로 한다.
도 2를 참조하면, 범프(20)는 금속 필라(21), 확산방지부재(22) 및 추가 확산방지부재(24)를 포함한다. 그 외에, 접속 금속층(23)를 더 포함한다.
추가 확산방지부재(24)는 구조체(10)와 금속 필라(21) 사이에 형성된다. 추가 확산방지부재(24)는 확산방지부재(22)와 일체로 형성되며, Ti, TiN, Ta, TaN, TiSiN 및 WN 중 적어도 어느 하나를 포함한다.
도 3은 본 발명의 제1실시예에 따른 반도체 장치를 도시한 단면도이다.
도 3을 참조하면, 본 발명의 제1실시예에 따른 반도체 장치(1)는, 제1구조체(100) 및 범프(200)를 포함한다. 그 외에, UBM(Under Bump Metal, 300)을 더 포함할 수 있다.
제1구조체(100)는, 예를 들어, 이미지 센서, 메모리 반도체, 시스템 반도체, 수동소자, 능동 소자 및 센서 반도체 등의 반도체 소자일 수 있다. 이와 다르게, 제1구조체(100)는 모듈 기판, 패키지 기판, 플렉서블 기판, 메인 보드 등의 인쇄회로기판일 수도 있다.
제1구조체(100)는 제1면(100A), 제1면(100A)과 대향하는 제2면(100B)을 갖는다. 제1구조체(100)는 제1전극 패드(110)를 포함한다. 그 외에, 퓨즈(120) 및 제1절연막 패턴(130)을 더 포함한다.
제1전극 패드(110)는 제1구조체(100)의 제1면(100A)에 형성된다. 퓨즈(120)는 제1구조체(100)의 제1면(100A)에 제1전극 패드(110)와 이격되도록 형성된다. 제1절연막 패턴(130)은 제1구조체(100)의 제1면(100A) 상에 제1전극 패드(110) 및 퓨즈(120)를 노출하도록 형성된다.
범프(200)는 제1전극 패드(110) 및 이에 인접한 제1절연막 패턴(130) 상에 형성된다.
본 실시예에서, 범프(200)는 앞서 도 1을 통해 설명된 제 1 실시예에 따른 범프와 실질적으로 동일한 구성을 갖는다.
구체적으로, 범프(200)는 금속 필라(210) 및 확산방지부재(220)를 포함한다. 그 외에, 접속 금속층(230)을 더 포함한다.
금속 필라(210)는 제1전극 패드(110) 및 제1절연막 패턴(130) 상에 형성된다. 금속 필라(210)는 예를 들어, 원기둥 또는 3각 이상의 각기둥 형상을 가지며, 금속 필라(210)는 제1구조체(100)와 마주하는 일단부(210A), 일단부(210A)과 대향하는 타단부(210B), 일단부(210A) 및 타단부(210B)를 연결하는 측면(210C)들을 갖는다. 금속 필라(210)는 구리, 니켈, 금 및 알루미늄 중 적어도 어느 하나를 포함한다.
확산방지부재(220)는 금속 필라(210)의 측면(210C)을 감싸도록 형성된다. 확산방지부재(220)는 금속 필라(210)의 금속 성분이 외부로 확산되는 현상을 방지하는 역할을 하는 것으로, Ti, TiN, Ta, TaN, TiSiN 및 WN 중 적어도 어느 하나를 포함한다.
접속 금속층(230)은 금속 필라(210)의 타단부(210B) 상에 형성되며, 금(Au), 주석(Sn) 및 솔더 중 적어도 어느 하나를 포함한다. 본 실시예에서, 확산방지부재(220)는 금속 필라(210)의 측면(210C)뿐만 아니라 접속 금속층(230)의 측면에도 형성된다.
UBM(300)은 제1전극 패드 및 절연막 패턴(110, 130)과 범프(200) 사이에 형성된다.
비록, 본 실시예에서는 앞서 도 1을 통해 설명된 제 1 실시예에 따른 범프가 사용된 경우를 도시 및 설명하였으나, 도 2를 통해 설명된 제2실시예에 따른 범프가 사용될 수도 있다.
도 4는 본 발명의 제2실시예에 따른 반도체 장치를 도시한 단면도이다.
본 발명의 제2실시예에 따른 반도체 장치(2)는, 앞서 도 3을 통해 설명된 제1실시예에 따른 반도체 장치(1)가 범프(200)를 매개로 제2전극 패드(410)를 갖는 제2구조체(400) 상에 실장된 구조를 갖는다. 따라서, 동일한 구성요소에 대한 중복 설명은 생략하기로 하며, 동일 구성요소에 대해서는 동일한 명칭 및 동일한 참조 부호를 부여하기로 한다.
제2구조체(400)는, 예를 들어, 이미지 센서, 메모리 반도체, 시스템 반도체, 수동소자, 능동 소자 및 센서 반도체 등의 반도체 소자일 수 있다. 이와 다르게, 제2구조체(400)는 모듈 기판, 패키지 기판, 플렉서블 기판, 메인 보드 등의 인쇄회로기판일 수도 있다.
제2구조체(400)는 제1구조체(100)과 마주하는 제3면(400A) 및 제3면(400A)과 대향하는 제4면(400B)을 갖는다. 제2구조체(400)는 제3면(400A)에 범프(200)와 연결되는 제2전극 패드(410)를 갖고, 제4면(400B)에 제3전극 패드(420)를 갖는다. 제2구조체(400)는 내부에 다층의 회로 배선(미도시)들 및 서로 다른 층에 형성된 회로 배선들을 연결하는 전도성 비아(미도시)를 포함하며, 제2전극 패드(410)와 제3전극 패드(420)는 회로 배선들 및 전도성 비아에 의하여 전기적으로 연결한다.
조인트부의 신뢰성을 향상시키기 위하여, 제1구조체(100)와 제2구조체(400) 사이에는 언더필 부재(500)가 충진되고, 제3전극 패드(420)에는 외부 장치와의 연결을 위하여 솔더볼과 같은 외부접속단자(600)가 장착된다.
도 5는 본 발명의 제3실시예에 따른 반도체 장치를 도시한 단면도이다.
도 5를 참조하면, 본 발명의 제3실시예에 따른 반도체 장치(3)는, 제1구조체(100), 범프(200), 제2구조체(400), 제3구조체(700) 및 연결부재(800)를 포함한다. 그 외에, UBM(300) 및 외부접속단자(600)를 더 포함한다.
본 실시예에서, 제1구조체(100) 및 제2구조체(400)는 이미지 센서, 메모리 반도체, 시스템 반도체, 수동소자, 능동 소자 및 센서 반도체 등의 반도체 소자일 수 있다.
제1구조체(100)는 제1면(100A), 제1면(100A)과 대향하는 제2면(100B)을 가지며, 제1전극 패드(110)를 포함한다. 그 외에, 퓨즈(120) 및 제1절연막 패턴(130)을 더 포함한다.
제1전극 패드(110)는 제1구조체(100)의 제1면(100A)에 형성된다. 퓨즈(120)는 제1구조체(100)의 제1면(100A)에 제1전극 패드(110)와 이격되도록 형성된다. 제1절연막 패턴(130)은 제1구조체(100)의 제1면(100A) 상에 제1전극 패드(110) 및 퓨즈(120)를 노출하도록 형성된다.
범프(200)는 제1전극 패드(110) 및 이에 인접한 제1절연막 패턴(130) 상에 형성된다.
본 실시예에서, 범프(200)는 앞서 도 1을 통해 설명된 제 1 실시예에 따른 범프와 실질적으로 동일한 구성을 갖는다.
구체적으로, 범프(200)는 금속 필라(210) 및 확산방지부재(220)를 포함한다. 그 외에, 접속 금속층(230)을 더 포함한다.
금속 필라(210)는 제1전극 패드(110) 및 제1절연막 패턴(130) 상에 형성된다. 금속 필라(210)는 예를 들어, 원기둥 또는 3각 이상의 각기둥 형상을 가지며, 금속 필라(210)는 제1구조체(100)와 마주하는 일단부(210A), 일단부(210A)과 대향하는 타단부(210B), 일단부(210A) 및 타단부(210B)를 연결하는 측면(210C)을 갖는다. 금속 필라(210)는 구리, 니켈, 금 및 알루미늄 중 적어도 어느 하나를 포함한다.
확산방지부재(220)는 금속 필라(210)의 측면(210C)을 감싸도록 형성된다. 금속 필라(210)의 금속 성분이 외부로 확산되는 현상을 방지하는 역할을 하는 것으로, Ti, TiN, Ta, TaN, TiSiN 및 WN 중 적어도 어느 하나를 포함한다.
접속 금속층(230)는 금속 필라(210)의 타면(210B) 상에 형성된다. 본 실시예에서, 확산방지부재(220)는 금속 필라(210)의 측면(210C)뿐만 아니라 접속 금속층(230)의 측면에도 형성된다.
비록, 본 실시예에서는 앞서 도 1을 통해 설명된 제 1 실시예에 따른 범프가 사용된 경우를 도시 및 설명하였으나, 도 2를 통해 설명된 제2실시예에 따른 범프가 사용될 수도 있다.
UBM(300)은 제1전극 패드 및 제1절연막 패턴(110, 130)과 범프(200) 사이에 형성된다.
제2구조체(400)는 제1구조체(100)와 마주하는 제3면(400A) 및 제3면(400A)과 대향하는 제4면(400B)을 갖는다. 제2구조체(400)는 제3면(400A)에 제2전극 패드(410) 및 재배선(430)을 포함한다. 그 외에, 제2절연막 패턴(440)을 더 포함한다.
제2전극 패드(410)는 제2구조체(400)의 제3면(400A)에 형성된다. 제2절연막 패턴(440)은 제2구조체(400)의 제3면(400A) 상에 제2전극 패드(410)를 노출하도록 형성된다.
재배선(430)은 제2전극 패드(410) 및 제2절연막 패턴(440) 상에 형성되며, 제2전극 패드(410)를 제2구조체(400)의 가장자리로 재배치시킨다. 재배선(430)의 일단부(430A)는 제2전극 패드(410)와 연결되고, 일단부(430A)와 대향하는 재배선(430)의 타단부(430B)는 제2구조체(400)의 가장자리에 배치된다.
제1구조체(100)는 범프(200)를 매개로 제2구조체(400)의 재배선(430) 상에 실장된다. 즉, 본 실시예에 따른 반도체 장치(3)는 칩 온 칩(chip on chip) 구조를 갖는다
제2구조체(400)의 제4면(400B)은 제3구조체(700) 상에 부착된다.
제3구조체(700)는, 예를 들어, 모듈 기판, 패키지 기판, 플렉서블 기판, 메인 보드 등의 인쇄회로기판일 수도 있다.
제3구조체(700)는 제2구조체(400)가 부착되는 제5면(700A) 및 제5면(700A)과 대향하는 제6면(700B)을 갖는다.
제3구조체(700)는 제2구조체(400) 바깥쪽 제5면(700A)에 형성되는 제4전극 패드(710) 및 제6면(700B)에 형성되는 제5전극 패드(720)을 갖는다. 제3구조체(700)는 내부에 다층의 회로 배선(미도시)들 및 서로 다른 층에 형성된 회로 배선들을 연결하는 전도성 비아(미도시)를 포함하며, 제4전극 패드(710)와 제5전극 패드(720)는 회로 배선들 및 전도성 비아에 의하여 전기적으로 연결한다.
연결부재(800)는 재배선(430)의 타단부(430B)와 제3구조체(700)의 제4전극 패드(710)를 전기적으로 연결하고, 외부접속단자(600)는 제3구조체(700)의 제5전극 패드(720)에 장착된다. 외부접속단자(600)는 솔더볼을 포함한다.
이상에서 상세하게 설명한 바에 의하면, 확산방지부재에 의하여 금속 필라의 금속 성분 확산이 억제되므로 금속 필라간 전기적인 숏트 및 퓨즈 불량이 방지된다.
앞서 설명한 본 발명의 상세한 설명에서는 본 발명의 실시예들을 참조하여 설명하였지만, 해당 기술분야의 숙련된 당업자 또는 해당 기술분야에 통상의 지식을 갖는 자라면 후술 될 특허청구범위에 기재된 본 발명의 사상 및 기술 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다.
20 : 범프
21: 금속 필라
22: 확산방지부재

Claims (19)

  1. 구조체 상에 형성되는 금속 필라; 및
    상기 금속 필라의 측면을 감싸는 확산방지부재를 포함하는 것을 특징으로 하는 범프.
  2. 제1항에 있어서,
    상기 금속 필라는 구리, 니켈, 금 및 알루미늄 중 적어도 어느 하나를 포함하는 것을 특징으로 하는 범프.
  3. 제1항에 있어서,
    상기 확산방지부재는 Ti, TiN, Ta, TaN, TiSiN 및 WN 중 적어도 어느 하나를 포함하는 것을 특징으로 하는 범프.
  4. 제1항에 있어서,
    상기 구조체와 금속 필라 사이에 형성되는 추가 확산방지부재를 더 포함하는 것을 특징으로 하는 범프.
  5. 제1항에 있어서,
    상기 금속 필라 상에 형성되는 접속 금속층을 더 포함하는 것을 특징으로 하는 범프.
  6. 제1면 및 상기 제1면에 대향하는 제2면을 가지며 상기 제1면에 제1전극 패드가 형성된 제1구조체; 및
    상기 제1전극 패드 상에 형성되는 범프를 구비하며,
    상기 범프는 상기 제1전극 패드 상에 형성되는 금속 필라; 및
    상기 금속 필라의 측면을 감싸는 확산방지부재를 포함하는 것을 특징으로 하는 반도체 장치.
  7. 제6항에 있어서,
    상기 금속 필라는 구리, 니켈, 금 및 알루미늄 중 적어도 어느 하나를 포함하는 것을 특징으로 하는 반도체 장치.
  8. 제6항에 있어서,
    상기 확산방지부재는 Ti, TiN, Ta, TaN, TiSiN 및 WN 중 적어도 어느 하나를 포함하는 것을 특징으로 하는 반도체 장치.
  9. 제 6항에 있어서,
    상기 범프는 상기 금속 필라 상에 형성되는 접속 금속층을 더 포함하는 것을 특징으로 하는 반도체 장치.
  10. 제6항에 있어서,
    상기 제1구조체와 상기 범프 사이에 형성되는 UBM을 더 포함하는 것을 특징으로 하는 반도체 장치.
  11. 제6항에 있어서,
    상기 범프는 상기 제1구조체와 금속 필라 사이에 형성되는 추가 확산방지부재를 더 포함하는 것을 특징으로 하는 반도체 장치.
  12. 제6항에 있어서,
    상기 제1구조체는 반도체 소자 또는 인쇄회로기판 중 어느 하나인 것을 특징으로 하는 반도체 장치.
  13. 제 12항에 있어서, 상기 반도체 소자는 이미지 센서, 메모리 반도체, 시스템 반도체, 수동 소자, 능동 소자 및 센서 반도체 중 선택된 어느 하나인 것을 특징으로 하는 반도체 장치.
  14. 제 12항에 있어서, 상기 인쇄회로기판은 모듈 기판, 패키지 기판, 메인 보드 플렉서블 기판 중 선택된 어느 하나인 것을 특징으로 하는 반도체 장치.
  15. 제6항에 있어서,
    상기 제1구조체는 상기 제1면에 퓨즈를 더 포함하는 것을 특징으로 하는 반도체 장치.
  16. 제6항에 있어서,
    상기 제1구조체의 제1면과 마주하는 제3면 및 상기 제3면과 대향하는 제4면을 가지며 상기 제3면에 상기 범프와 전기적으로 연결되는 제2전극 패드가 형성된 제2구조체를 더 포함하는 것을 특징으로 하는 반도체 장치.
  17. 제16항에 있어서, 상기 제2구조체는 반도체 소자 또는 인쇄회로기판 중 어느 하나인 것을 특징으로 하는 반도체 장치.
  18. 제17항에 있어서, 상기 반도체 소자는 이미지 센서, 메모리 반도체, 시스템 반도체, 수동 소자, 능동 소자 및 센서 반도체 중 선택된 어느 하나인 것을 특징으로 하는 반도체 장치.
  19. 제 17항에 있어서, 상기 인쇄회로기판은 모듈 기판, 패키지 기판, 메인 보드 및 플렉서블 기판 중 선택된 어느 하나인 것을 특징으로 하는 반도체 장치.
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