KR20120089778A - 벌크 커패시터 및 방법 - Google Patents
벌크 커패시터 및 방법 Download PDFInfo
- Publication number
- KR20120089778A KR20120089778A KR1020127019059A KR20127019059A KR20120089778A KR 20120089778 A KR20120089778 A KR 20120089778A KR 1020127019059 A KR1020127019059 A KR 1020127019059A KR 20127019059 A KR20127019059 A KR 20127019059A KR 20120089778 A KR20120089778 A KR 20120089778A
- Authority
- KR
- South Korea
- Prior art keywords
- ceramic body
- porous ceramic
- dielectric layer
- electrode
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims description 27
- 239000000919 ceramic Substances 0.000 claims abstract description 120
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 239000011888 foil Substances 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000011049 filling Methods 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract 4
- 229920001940 conductive polymer Polymers 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- 208000031872 Body Remains Diseases 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims 4
- 239000000853 adhesive Substances 0.000 claims 2
- 230000001070 adhesive effect Effects 0.000 claims 2
- 239000011148 porous material Substances 0.000 abstract description 12
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 230000009467 reduction Effects 0.000 description 9
- 238000001652 electrophoretic deposition Methods 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000006056 electrooxidation reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- -1 BaCO 3 Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 229920001345 ε-poly-D-lysine Polymers 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910017278 MnxOy Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- MVYYDFCVPLFOKV-UHFFFAOYSA-M barium monohydroxide Chemical compound [Ba]O MVYYDFCVPLFOKV-UHFFFAOYSA-M 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 229920002848 poly(3-alkoxythiophenes) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000329 polyazepine Polymers 0.000 description 1
- 229920000323 polyazulene Polymers 0.000 description 1
- 229920001088 polycarbazole Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000417 polynaphthalene Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- UUCCCPNEFXQJEL-UHFFFAOYSA-L strontium dihydroxide Chemical compound [OH-].[OH-].[Sr+2] UUCCCPNEFXQJEL-UHFFFAOYSA-L 0.000 description 1
- 229910001866 strontium hydroxide Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/055—Etched foil electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9431708P | 2008-09-04 | 2008-09-04 | |
| US61/094,317 | 2008-09-04 | ||
| PCT/US2009/055874 WO2010028138A2 (en) | 2008-09-04 | 2009-09-03 | Bulk capacitor and method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117007704A Division KR101237612B1 (ko) | 2008-09-04 | 2009-09-03 | 벌크 커패시터 및 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20120089778A true KR20120089778A (ko) | 2012-08-13 |
Family
ID=41622560
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127019059A Withdrawn KR20120089778A (ko) | 2008-09-04 | 2009-09-03 | 벌크 커패시터 및 방법 |
| KR1020117007704A Expired - Fee Related KR101237612B1 (ko) | 2008-09-04 | 2009-09-03 | 벌크 커패시터 및 방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117007704A Expired - Fee Related KR101237612B1 (ko) | 2008-09-04 | 2009-09-03 | 벌크 커패시터 및 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8238076B2 (enExample) |
| EP (1) | EP2329506A2 (enExample) |
| JP (1) | JP2012502481A (enExample) |
| KR (2) | KR20120089778A (enExample) |
| CN (2) | CN102177562B (enExample) |
| TW (1) | TW201021061A (enExample) |
| WO (1) | WO2010028138A2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100415264B1 (ko) * | 2001-04-04 | 2004-01-14 | 김재용 | 토양 개량제의 조성물 |
| KR20030054116A (ko) * | 2001-12-24 | 2003-07-02 | 이명희 | 식물성장 농업용 개량제의 조성물 |
| KR20030054118A (ko) * | 2001-12-24 | 2003-07-02 | 이명희 | 쓰레기 매립장의 정화제로 이용되는 토양 개량제의조성물 |
| KR101973438B1 (ko) * | 2017-07-19 | 2019-04-29 | 삼성전기주식회사 | 커패시터 부품 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3585460A (en) | 1969-11-10 | 1971-06-15 | Rca Corp | Miniature ceramic capacitor and method of manufacture |
| JPS5522162U (enExample) * | 1978-07-28 | 1980-02-13 | ||
| US4520430A (en) * | 1983-01-28 | 1985-05-28 | Union Carbide Corporation | Lead attachment for tantalum anode bodies |
| JPS60116225U (ja) * | 1984-01-10 | 1985-08-06 | 日本通信工業株式会社 | 半導体セラミツクコンデンサ |
| JPS61193418A (ja) | 1985-02-21 | 1986-08-27 | 株式会社村田製作所 | 積層セラミツクコンデンサ |
| JP3065286B2 (ja) | 1997-09-24 | 2000-07-17 | 日本電気株式会社 | 固体電解コンデンサおよびその製造方法 |
| US6344966B1 (en) * | 1998-09-08 | 2002-02-05 | Showa Denko K.K. | Solid electrolytic capacitor and method for producing the same |
| US6226173B1 (en) * | 1999-01-26 | 2001-05-01 | Case Western Reserve University | Directionally-grown capacitor anodes |
| US6456483B1 (en) * | 1999-04-14 | 2002-09-24 | Becromal S.P.A. | Electrodes for electrolytic capacitors and production process thereof |
| US6381121B1 (en) * | 1999-05-24 | 2002-04-30 | Showa Denko Kabushiki Kaisha | Solid electrolytic capacitor |
| WO2001057928A1 (en) * | 2000-02-03 | 2001-08-09 | Case Western Reserve University | High power capacitors from thin layers of metal powder or metal sponge particles |
| CN100351963C (zh) * | 2001-11-08 | 2007-11-28 | 松下电器产业株式会社 | 电容器及其制造方法 |
| JP4614269B2 (ja) * | 2003-11-13 | 2011-01-19 | 昭和電工株式会社 | 固体電解コンデンサ |
| JP2005158816A (ja) * | 2003-11-20 | 2005-06-16 | Tdk Corp | 電気化学デバイスの製造方法及び電気化学デバイス |
| US7099143B1 (en) * | 2005-05-24 | 2006-08-29 | Avx Corporation | Wet electrolytic capacitors |
| US20080310080A1 (en) * | 2005-08-19 | 2008-12-18 | Martin Biler | Solid State Capacitors and Method of Manufacturing Them |
| US20080232032A1 (en) * | 2007-03-20 | 2008-09-25 | Avx Corporation | Anode for use in electrolytic capacitors |
-
2009
- 2009-09-03 CN CN2009801399938A patent/CN102177562B/zh not_active Expired - Fee Related
- 2009-09-03 KR KR1020127019059A patent/KR20120089778A/ko not_active Withdrawn
- 2009-09-03 US US12/553,508 patent/US8238076B2/en not_active Expired - Fee Related
- 2009-09-03 JP JP2011526196A patent/JP2012502481A/ja active Pending
- 2009-09-03 KR KR1020117007704A patent/KR101237612B1/ko not_active Expired - Fee Related
- 2009-09-03 WO PCT/US2009/055874 patent/WO2010028138A2/en not_active Ceased
- 2009-09-03 EP EP09764112A patent/EP2329506A2/en not_active Withdrawn
- 2009-09-03 CN CN2012103136095A patent/CN102856075A/zh active Pending
- 2009-09-04 TW TW098129887A patent/TW201021061A/zh unknown
-
2012
- 2012-08-06 US US13/567,317 patent/US20120300363A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20120300363A1 (en) | 2012-11-29 |
| CN102856075A (zh) | 2013-01-02 |
| KR20110118610A (ko) | 2011-10-31 |
| US8238076B2 (en) | 2012-08-07 |
| EP2329506A2 (en) | 2011-06-08 |
| TW201021061A (en) | 2010-06-01 |
| CN102177562B (zh) | 2013-01-16 |
| US20100073846A1 (en) | 2010-03-25 |
| HK1161933A1 (en) | 2012-08-10 |
| KR101237612B1 (ko) | 2013-02-28 |
| WO2010028138A3 (en) | 2010-05-06 |
| WO2010028138A2 (en) | 2010-03-11 |
| CN102177562A (zh) | 2011-09-07 |
| JP2012502481A (ja) | 2012-01-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A107 | Divisional application of patent | ||
| PA0104 | Divisional application for international application |
Comment text: Divisional Application for International Patent Patent event code: PA01041R01D Patent event date: 20120719 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |