KR20120078376A - Light emitting diode having reflective electrode, its light emitting diode package and its manufacturing method - Google Patents

Abstract

PURPOSE: A light emitting diode having a reflective layer, a light emitting diode package, and a manufacturing method thereof are provided to improve optical extraction efficiency by arranging an electrode which can reflect light generated from an active layer to the outside by using a reflecting layer. CONSTITUTION: A light emitting structure(10) comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. A first electrode(21) is electrically connected to the first conductivity type semiconductor layer and includes a reflecting layer on a side in order to reflect light generated from the active layer. A second electrode(22) is electrically connected to the second conductivity type semiconductor layer.

Description

A light emitting diode having an electrode on which a reflective layer is formed, and a light emitting diode package and a method of manufacturing the same.

The present invention relates to a light emitting diode having an electrode on which a reflective layer is formed, and a light emitting diode package and a method of manufacturing the same. More specifically, the light is provided by installing an electrode capable of reflecting light generated in the active layer to the outside using a reflective layer. A light emitting diode having an electrode having a reflective layer capable of improving extraction efficiency, and a light emitting diode package and a method of manufacturing the same.

Since light emitting diodes have a higher refractive index than air, much of the light generated by recombination of electrons and holes remains in the device. These photons pass through various paths such as a thin film, a substrate, and an electrode before escaping to the outside, and the external quantum efficiency is reduced by absorption. Various studies for increasing the external quantum efficiency are continuing.

In particular, conventional electrodes are usually made of a material having excellent electrical conductivity. However, an electrode material such as gold or copper having excellent electrical conductivity has a property of absorbing a considerable amount of light by itself.

That is, the light generated in the active layer is not extracted to the outside, it is absorbed by the conventional electrode has a problem that the light extraction efficiency is lowered.

The technical problem to be achieved by the present invention is to reflect the light generated from the active layer to the outside by using an electrode having a reflective layer on the side to prevent the phenomenon of light is absorbed into the electrode, and to improve the light extraction efficiency A light emitting diode having an electrode on which a reflective layer is formed, a light emitting diode package, and a method of manufacturing the same are provided.

According to an aspect of the present invention, there is provided a light emitting diode having an electrode having a reflective layer, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; And a first electrode electrically connected to the first conductivity type semiconductor layer and having a reflective layer formed on a side thereof to reflect light generated from the active layer.

In some embodiments of the present invention, a light emitting diode having an electrode having a reflective layer according to the spirit of the present invention may include a second electrode electrically connected to the second conductive semiconductor layer; And a substrate stacked on a lower surface of the first conductivity type semiconductor layer, wherein the first electrode may be provided on a mesa-etched portion of the first conductivity type semiconductor layer.

In addition, according to the spirit of the present invention, the first electrode may have a cylindrical shape as a whole, and the reflective layer may be formed on an outer diameter surface of the first electrode.

In addition, according to the spirit of the present invention, the reflective layer of the first electrode may be formed to be inclined at a predetermined angle so as to reflect upwardly the photometry generated in the active layer and emitted laterally.

In addition, according to the spirit of the present invention, the reflective layer of the first electrode may extend to cover the mesa etched portion of the first conductive semiconductor layer.

In addition, according to the spirit of the present invention, the reflective layer of the first electrode, the uneven surface may be formed to induce scattering.

According to an aspect of the present invention, there is provided a light emitting diode package including an electrode having a reflective layer, including: a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially stacked; And a first electrode electrically connected to the first conductivity type semiconductor layer and having a reflective layer formed on a side thereof to reflect light generated from the active layer. A lead frame connected to the first electrode by a wire; And a transparent protective layer covering and protecting the light emitting diode and the lead frame.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting diode having an electrode having a reflective layer, the light emitting structure having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially stacked, and Forming a first electrode on the first conductivity type semiconductor layer; Forming a mask around the first electrode to expose only the first electrode; Forming a reflective layer on the exposed first electrode; And removing a portion of the reflective layer to form a wire bonding surface.

In addition, according to the spirit of the present invention, the forming of the reflective layer on the first electrode may be performed by selecting any one or more of evaporation, sputtering, plating, and a combination thereof.

The light emitting diode having the electrode on which the reflective layer of the present invention is formed, the light emitting diode package, and a method of manufacturing the same have an effect of preventing light absorption of the light and improving light extraction efficiency.

1 is a cross-sectional view illustrating a light reflection state of a light emitting diode having an electrode on which a reflective layer is formed according to an embodiment of the present invention.
2 is a perspective view illustrating a light emitting diode having an electrode on which a reflective layer is formed according to another exemplary embodiment of the present invention.
3 is a block diagram illustrating a method of manufacturing a light emitting diode having an electrode on which a reflective layer is formed according to an embodiment of the present invention.
4 to 8 are cross-sectional views illustrating a method of manufacturing a light emitting diode having an electrode on which a reflective layer of FIG. 1 is formed.
9 to 13 are cross-sectional views illustrating a light emitting diode having an electrode on which a reflective layer is formed, according to various embodiments of the present disclosure.
14 is a cross-sectional view illustrating a light emitting diode package having an electrode on which a reflective layer is formed according to an embodiment of the present invention.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In addition, the thickness or size of each layer in the drawings is exaggerated for convenience and clarity of description. Like numbers refer to like elements herein. Throughout the specification, when referring to one component, such as a layer, region, or substrate, being located on, “connected”, or “under” another component, the one component is directly in another configuration. It may be interpreted that there may be other components in contact with or interposed between, or “on,” “connected”, or “under” an element. On the other hand, when one component is referred to as being located on another component "directly on", "directly connected", or "directly under", it is interpreted that there are no other components intervening therebetween. do.

In the figure the flow of current is shown by solid arrows and the progress of light is shown by dashed arrows.

1 is a cross-sectional view illustrating a light reflection state of a light emitting diode having an electrode on which a reflective layer is formed according to an embodiment of the present invention, and FIG. 2 is a perspective view of a light emitting diode having an electrode on which a reflective layer is formed according to another embodiment of the present invention. to be.

1 and 2, a light emitting diode having an electrode having a reflective layer according to an embodiment of the present invention includes a light emitting structure 10, a transparent electrode layer 14, a first electrode 21, and a first electrode 21. This configuration includes the two electrodes 22 and the substrate 40.

The substrate 40 is positioned below the first conductivity type semiconductor layer 11 and includes sapphire (Al 2 O 3), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), and silicon (Si). ), Germanium (Ge), zinc oxide (ZnO), magnesium oxide (MgO), aluminum nitride (AlN), borate nitride (BN), gallium phosphide (GaP), indium phosphide (InP), lithium-aluminum oxide (LiAl2O3) It may include any one of. Although not shown, an uneven pattern (not shown) may be formed on the top and / or bottom surface of the substrate 40 to reflect light, and the uneven pattern may have a stripe shape, a lens shape, a pillar shape, a horn shape, or the like. It may have various shapes.

In addition, a buffer layer (not shown) may be positioned on one side of the substrate 40 to mitigate lattice mismatch between the substrate 40 and the light emitting structure 10. The buffer layer may be formed of a single layer or multiple layers, and may include, for example, at least one of GaN, InN, AlN, InGaN, AlGaN, AlGaInN, and AlInN. Although not shown, an undoped semiconductor layer (not shown) may be located on the substrate 40 or the buffer layer, and the undoped semiconductor layer may include GaN.

The light emitting structure 10 may include a first conductive semiconductor layer 11, an active layer 13, and a second conductive semiconductor layer 12 that are sequentially or non-sequentially stacked. The silver may be positioned on the substrate 40, and a plurality of conductive semiconductor layers may be formed of any one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure based on the substrate 40. Hereinafter, a case in which the light emitting structure 10 is an n-p junction structure will be described as an example.

The light emitting structure 10 includes a first conductive semiconductor layer 11, an active layer 13, and a second conductive semiconductor layer 12 that are sequentially or non-sequentially stacked. The light emitting structure 10 may be, for example, electron beam evaporation, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD) , Plasma laser deposition (PLD), dual-type thermal evaporator, sputtering, metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), or the like.

When a voltage is applied to the light emitting structure 10 in the forward direction, electrons in the conduction band of the active layer 13 and holes in the valence band transition and recombine, and energy corresponding to the energy gap is emitted as light. The wavelength of the emitted light is determined by the kind of material constituting the active layer 13. In addition, the first conductivity type semiconductor layer 11 and the second conductivity type semiconductor layer 12 perform a function of providing electrons or holes to the active layer 13 according to the applied voltage. The first conductivity type semiconductor layer 11 and the second conductivity type semiconductor layer 12 may include impurities to have different conductivity types. For example, the first conductivity type semiconductor layer 11 may include n-type impurities, and the second conductivity type semiconductor layer 12 may include p-type impurities. In this case, the first conductivity type semiconductor layer 11 may provide electrons, and the second conductivity type semiconductor layer 12 may provide holes. On the contrary, the technical concept of the present invention also includes the case where the first conductivity-type semiconductor layer 11 is p-type and the second conductivity-type semiconductor layer 12 is n-type. Each of the first conductive semiconductor layer 11 and the second conductive semiconductor layer 12 may include a group III-V compound material, and may include, for example, a gallium nitride-based material.

The first conductivity type semiconductor layer 11 may be implemented as an n-type semiconductor layer doped with an n-type dopant, for example, n-type AlxInyGazN (0 ≦ x, y, z ≦ 1, x + y + z = 1). For example, the first conductivity type semiconductor layer 11 may include n-type GaN. The n-type dopant may be at least one of silicon (Si), germanium (Ge), tin (Sn), selenium (Se), and tellurium (Te).

The second conductivity-type semiconductor layer 12 may be implemented as a p-type semiconductor layer doped with a p-type dopant, for example, p-type AlxInyGazN (0 ≦ x, y, z ≦ 1, x + y + z = 1). For example, the second conductivity-type semiconductor layer 12 may include p-type GaN. The n-type dopant may be at least one of magnesium (Mg), zinc (Zn), calcium (Ca), strontium (Sr), beryllium (Be), and barium (Ba). Although not shown, the second conductive semiconductor layer 12 may have a concave-convex pattern (not shown) formed on the upper surface of the second conductive semiconductor layer 12 so as to be refracted and emitted to the outside.

Since the active layer 13 has a lower energy band gap than the first conductive semiconductor layer 11 and the second conductive semiconductor layer 12, light emission may be activated. The active layer 13 may emit light of various wavelengths, and may emit infrared light, visible light, or ultraviolet light, for example. The active layer 13 may comprise a Group III-V compound material, for example AlxInyGazN (0 ≦ x, y, z ≦ 1, x + y + z = 1), for example It may include InGaN or AlGaN. In addition, the active layer 13 may include a single quantum well (SQW) or a multi quantum well (MQW). The active layer 13 may have a stacked structure of a quantum well layer and a quantum barrier layer, and the number of the quantum well layer and the quantum barrier layer may be variously changed according to design needs. In addition, the active layer 13 may include, for example, a GaN / InGaN / GaN MQW structure or a GaN / AlGaN / GaN MQW structure. However, this is exemplary, and the active layer 13 has a wavelength of light emitted according to the constituent material, for example, when the amount of indium is about 22%, it can emit blue light, and about 40% It can emit green light. The present invention is not limited to the constituent materials of the active layer 13.

The light emitting structure 10 may have an active layer 13 and a mesa region from which a portion of the second conductivity-type semiconductor layer 12 is removed, and a portion of the first conductivity-type semiconductor layer 11. Can be removed. The active layer 13 may be limited to the mesa region to emit light. As the mesa region is formed, a portion of the first conductivity type semiconductor layer 11 may be exposed.

The mesa region may be formed using inductively coupled plasma reactive ion etching (ICP-RIE), wet etching, or dry etching.

Meanwhile, the first electrode 21 is electrically connected to the first conductive semiconductor layer 11 and may have a finger F. The first electrode 21 may reflect light generated from the active layer 13. So that the reflective layer 30 is formed on the side.

The first electrode 21 may have a cylindrical shape, a square column shape, or a polygonal column shape, and the reflective layer 30 may be formed on an outer diameter surface of the first electrode 21.

The reflective layer 30 includes a dielectric having excellent light reflectivity, silver (Ag), platinum (Pt), aluminum (Al), alloys thereof, silver (Ag) oxide (Ag-O), and APC alloy (Ag). , Pd, alloy containing Cu), tin (Sn), tungsten (W), cobalt (Co), magnesium (Mg), zinc (Zn), chromium (Cr), silicon, rhodium (Rh), palladium (Pd ), Nickel (Ni), ruthenium (Ru), iridium (Ir), titanium (Ti), distributed Bragg reflector (DBR), transparent electrode powder, sapphire powder and combinations thereof I can make it.

As illustrated in FIG. 1, the first electrode 21 may be provided in the mesa-etched portion A1 of the first conductive semiconductor layer 11, that is, the mesa region.

Here, the first electrode 21 may be located on the first conductivity type semiconductor layer 11 exposed by the mesa region. The first electrode 21 may include a material forming an ohmic contact with the first conductive semiconductor layer 11. For example, gold (Au), silver (Ag), aluminum (Al), and palladium (Pd) may be used. ), Titanium (Ti), chromium (Cr), nickel (Ni), tin (Sn), chromium (Cr), platinum (Pt), tungsten (W), cobalt (Co), iridium (Ir), rhodium (Rh) ), Ruthenium (Ru), zinc (Zn), magnesium (Mg) or alloys thereof, and may include, for example, carbon nanotubes. The first electrode 21 may be composed of a single layer or multiple layers, for example, may be composed of multiple layers such as Ti / Al, Cr / Au, Ti / Au, Au / Sn. Bonding wires may be connected to the first electrode 21 in the packaging process.

In addition, the second electrode 22 is electrically connected to the second conductivity-type semiconductor layer 12. The second electrode 22 may be located on the transparent electrode layer 14. The first electrode 21 and the second electrode 22 may be positioned to face each other. The second electrode 22 may include a material forming an ohmic contact with the transparent electrode layer 14. For example, gold (Au), silver (Ag), palladium (Pd), titanium (Ti), nickel ( Ni), tin (Sn), chromium (Cr), platinum (Pt), tungsten (W), cobalt (Co), iridium (Ir), rhodium (Rh), ruthenium (Ru), zinc (Zn), magnesium ( Mg) or an alloy thereof, and may include, for example, carbon nanotubes. The second electrode 22 may be composed of a single layer or multiple layers, and may be composed of multiple layers such as Ni / Au, Pd / Au, and Pd / Ni. Bonding wires may be connected to the second electrode 22 in the packaging process.

The first electrode 21 and the second electrode 22 may be formed using thermal evaporation, e-beam evaporation, sputtering, or chemical vapor deposition. This is not limited to this. In addition, the first electrode 21 and the second electrode 22 may be formed using various methods such as a lift-off and a plating method. In addition, the first electrode 21 and the second electrode 22 may be heat treated to improve ohmic contact.

The second electrode 22 may further include an electrode finger F extending toward the first electrode 21. The finger F may distribute the current more evenly to the transparent electrode layer 14. The finger 14 may be formed of the same material as the second electrode 21 and may be formed simultaneously with the second electrode 22.

A lower side of the second electrode 22 may further include a reflective electrode layer (not shown). The reflective electrode layer may reflect light and prevent the second electrode 22 from absorbing light. The reflective electrode layer may include aluminum (Al), silver (Ag), alloys thereof, silver (Ag) oxides (Ag-O), or APC alloys (alloys including Ag, Pd, and Cu). In addition, the reflective electrode layer may further include at least one of rhodium (Rh), copper (Cu), palladium (Pd), nickel (Ni), ruthenium (Ru), iridium (Ir), and platinum (Pt). In addition, the reflective electrode layer may be formed of a material for increasing ohmic contact between the transparent electrode layer 14 and the second electrode 22. Although not shown, the reflective electrode layer may also be formed below the first electrode 21.

Meanwhile, the transparent electrode layer 14, which is selectively provided, is positioned on the second conductive semiconductor layer 12, and the current injected from the second electrode 22 is applied to the second conductive semiconductor layer 12. It can perform the function of uniformly dispersing. The transparent electrode layer 14 may have a thin film form without a pattern as a whole or may have a predetermined pattern form. The transparent electrode layer 14 may be formed in a pattern of a mesh structure for adhesion to the second conductive semiconductor layer 12. The transparent electrode layer 14 may include a transparent and conductive material. The transparent electrode layer 14 may include a metal, and may be, for example, a composite layer of nickel (Ni) and gold (Au). In addition, the transparent electrode layer 14 may include an oxide, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), or indium (AZO) aluminum zinc oxide (GZO), gallium zinc oxide (GZO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum tin oxide (ATO), indium tungsten oxide (IGWO), CIO (cupper indium oxide), MIO (magnesium indium oxide), MgO, ZnO, In2O3, TiTaO2, TiNbO2, TiOx, RuOx, and may include at least one of IrOx. The transparent electrode layer 14 may be formed using, for example, evaporation or sputtering, but the present invention is not limited thereto. In addition, an uneven pattern (not shown) may be formed on the upper surface of the transparent electrode layer 14 so as to refract light to be emitted to the outside.

On the other hand, Figure 3 is a block diagram showing a light emitting diode manufacturing method having an electrode with a reflective layer according to an embodiment of the present invention. 4 to 8 are cross-sectional views illustrating a method of manufacturing a light emitting diode having an electrode on which a reflective layer of FIG. 1 is formed.

As illustrated in FIG. 3, the method of manufacturing the light emitting diode having the electrode having the reflective layer of the present invention will be described in more detail. The first conductive semiconductor layer 11, the active layer 13, and the second conductive layer of FIG. The light emitting structure 10 in which the conductive semiconductor layer 12 is sequentially stacked is formed, and the first electrode 21 is formed in the first conductive semiconductor layer 11 (S1).

Subsequently, a mask M is formed around the first electrode 21 to expose the first electrode 21 of FIG. 5 (S2).

Subsequently, a reflective layer 30 is formed on the exposed first electrode 21 of FIG. 6 (S3). In this case, the reflective layer 30 may be formed by selecting any one or more processes of evaporation, sputtering, plating, and a combination thereof. As shown in FIG. 7, after the reflective layer 30 is formed, the mask M may be removed through a process such as etching.

Subsequently, a portion of the reflective layer 30 is removed using a process such as etching or laser cutting so that the wire bonding surface 21a of the first electrode 21 of FIG. 8 is formed (S4).

Therefore, the reflective layer 30 may be formed on the side of the first electrode through the above-described processes, and the wiring may be smoothly made through the wire bonding surface 21a.

9 to 13 are cross-sectional views illustrating a light reflection state of a light emitting diode having an electrode on which a reflective layer is formed, according to another exemplary embodiment.

As shown in FIG. 9, the reflective layer 60 of the first electrode 51 according to another embodiment of the present invention may reflect upwardly the photometry generated in the active layer 13 and emitted laterally. It may be formed to be inclined at a predetermined angle (K).

In addition, as shown in FIG. 10, the reflective layer 80 of the first electrode 71 according to another embodiment of the present invention may be a mesa-etched portion A1 of the first conductivity-type semiconductor layer 11. It is also possible to cover and extend the other part A2 which is mesa etched except).

11, the uneven surface 100a may be formed in the reflective layer 100 of the first electrode 91 according to another embodiment of the present invention to induce scattering. The uneven surface 100a may be formed by etching the surface of the reflective layer 100.

In addition, as shown in FIG. 12, the reflective layer 120 of the first electrode 111 according to another embodiment of the present invention may include a distributed Bragg reflector (DBR).

Here, the reflective layer 120 composed of the distributed Bragg reflector may be configured by alternately stacking the low refractive index layer 121 and the high refractive index layer 122 to a thickness of “mλ / 4n”. Is the wavelength of the emitted light, n is the refractive index of the medium, and m is the odd number. The low refractive index layer 121 may include, for example, silicon oxide (SiO 2, refractive index 1.4) or aluminum oxide (Al 2 O 3, refractive index 1.6). The high refractive index layer 122 may include, for example, silicon nitride (Si 3 N 4, refractive index 2.05 to 2.25) titanium nitride (TiO 2, refractive index 2 or more), or Si—H (refractive index 3 or more). The number of the low refractive index layer 121 and the high refractive index layer 122 may vary.

In addition, as shown in FIG. 13, the reflective layer 140 of the first electrode 131 according to another embodiment of the present invention is a powder scattering body that scatters light such as transparent electrode powder or sapphire powder in various directions. 141 may include. The powder scatterer 141 may be located on the surface of the reflective layer 140.

14 is a cross-sectional view illustrating a light emitting diode package having an electrode on which a reflective layer is formed according to an embodiment of the present invention.

As shown in FIG. 14, the LED package 1000 having the electrode on which the reflective layer is formed according to the exemplary embodiment of the present invention includes the above-described LED 200, the first electrode 21, and a wire ( And a transparent protective layer 203 covering and protecting the light emitting diode 200 and the lead frame 202 connected to the lead frame 202.

Therefore, when a current is provided through the lead frame 202, light is emitted from the light emitting structure of the light emitting diode 200, and then emitted through the transparent protective layer 203. Such a light emitting diode package 1000 is exemplary, and the present invention is not limited thereto.

10: light emitting structure 11: first conductive semiconductor layer
12: second conductive semiconductor layer 13: active layer
14: transparent electrode layer F: finger
21, 71, 91, 111, and 131: first electrode 22: second electrode
30, 60, 80, 100, 120, 140: reflective layer 40: substrate
K: angle 100a: uneven surface
141: powder scatterer 200: light emitting diode
201: wire 202: leadframe
203: transparent protective layer 1000: light emitting diode package
M: mask

Claims (10)

A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
A first electrode electrically connected to the first conductivity type semiconductor layer and having a reflective layer formed on a side thereof to reflect light generated from the active layer; And
A second electrode electrically connected to the second conductivity type semiconductor layer;
A light emitting diode having an electrode with a reflective layer formed thereon comprising a. The method of claim 1,
And the first electrode is generally cylindrical, square or polygonal in shape, and the reflective layer is formed on an outer diameter surface of the first electrode. The method of claim 1,
The reflective layer of the first electrode is a dielectric having excellent reflectivity, silver (Ag), platinum (Pt), aluminum (Al), alloys thereof, silver (Ag) oxides (Ag-O), APC alloys (Ag, Pd , Alloy containing Cu), tin (Sn), tungsten (W), cobalt (Co), magnesium (Mg), zinc (Zn), chromium (Cr), silicon, rhodium (Rh), palladium (Pd), A light emitting diode having an electrode with a reflective layer, comprising at least one of nickel (Ni), ruthenium (Ru), iridium (Ir), titanium (Ti), and combinations thereof. 4. The method according to any one of claims 1 to 3,
The reflective layer of the first electrode is a light emitting diode having an electrode with a reflective layer, characterized in that formed to be inclined at a predetermined angle so as to reflect upwardly the photometry generated in the active layer and emitted laterally. 4. The method according to any one of claims 1 to 3,
The first electrode is provided on a mesa etched portion of the first conductivity type semiconductor layer,
The reflective layer of the first electrode, the light emitting diode having an electrode with a reflective layer, characterized in that extending to cover the mesa-etched portion of the first conductive semiconductor layer. The method according to any one of claims 1 to 3,
The reflective layer of the first electrode is a light emitting diode having an electrode with a reflective layer, characterized in that the concave-convex surface is formed to induce scattering. 4. The method according to any one of claims 1 to 3,
The reflective layer of the first electrode, the light emitting diode having an electrode with a reflective layer, characterized in that it comprises a distributed Bragg reflector (DBR). 4. The method according to any one of claims 1 to 3,
The reflective layer of the first electrode includes a powder scatterer for scattering light, wherein the light emitting diode having an electrode with a reflective layer formed thereon. A light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are stacked; And a first electrode electrically connected to the first conductivity type semiconductor layer and having a reflective layer formed on a side thereof to reflect light generated from the active layer.
A lead frame connected to the first electrode by a wire; And
A transparent protective layer covering and protecting the light emitting diode and the lead frame;
The light emitting diode package having an electrode with a reflective layer, characterized in that it comprises a. Forming a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially stacked, and forming a first electrode on the first conductive semiconductor layer;
Forming a mask around the first electrode to expose only the first electrode;
Forming a reflective layer on the exposed first electrode; And
Removing a portion of the reflective layer to form a wire bonding surface;
Light emitting diode manufacturing method having an electrode with a reflective layer formed, comprising a.

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