KR20120070000A - Light emitting diode package - Google Patents
Light emitting diode package Download PDFInfo
- Publication number
- KR20120070000A KR20120070000A KR1020100131371A KR20100131371A KR20120070000A KR 20120070000 A KR20120070000 A KR 20120070000A KR 1020100131371 A KR1020100131371 A KR 1020100131371A KR 20100131371 A KR20100131371 A KR 20100131371A KR 20120070000 A KR20120070000 A KR 20120070000A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting diode
- heat sink
- chip
- circuit board
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims description 20
- 239000012790 adhesive layer Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000006071 cream Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
The present invention relates to a light emitting diode package, and more particularly, to a light emitting diode package having a heat sink attached to a lower portion of a printed circuit board.
In general, a light emitting diode (hereinafter referred to as "LED") refers to a light emitting device in which electrons and grains meet and emit light at a P-N junction by application of a current. The LED device may be mounted on a printed circuit board and manufactured in a package form to emit light by applying a current. Such LEDs have recently been used as backlights for lighting, liquid crystal displays (LCDs), etc., and in particular, their use is gradually increasing due to their excellent efficiency and light emission characteristics compared to other light emitting devices.
On the other hand, as LEDs are gradually miniaturized, some important problems are emerging, among which heat dissipation is a big problem. Heat generated from the LED chip in the LED package has a direct impact on the light emitting performance and lifetime. The reason is that if heat generated in the LED chip is sustained, dislocations, mismatches, etc. occur in the crystal structure of the semiconductor constituting the LED chip. Moreover, high power LED packages have recently been developed, which operate in a high voltage environment, and such high voltages generate more heat in the LED chips.
As a method for improving heat dissipation characteristics in an LED package, a structure for dissipating heat by attaching a plate-shaped heat sink using a predetermined metal plate to a rear surface of a printed circuit board on which an LED chip is mounted has been conventionally proposed. In this structure, the heat generated from the LED chip is discharged through the heat sink through the printed circuit board, that is, the heat generated from the LED chip heat exchanges with the printed circuit board, and heat exchange between the printed circuit board and the heat sink is performed again. Proceed. Such a heat exchange method is complicated in its process, and in particular, its heat dissipation efficiency is not sufficient for use in a high power LED package or a large LED module.
The present invention has been made to solve the above-mentioned problems of the prior art, by providing a light emitting diode package having a dual heat dissipation mechanism by heat generated in the light emitting diode chip is in direct contact with the heat sink and the atmosphere, compared to the conventional An object of the present invention is to provide a light emitting diode package that can more effectively radiate heat.
The light emitting diode package according to the present invention is mounted on a printed circuit board in which a chip arrangement region in which a light emitting diode chip is to be arranged is opened, a heat sink attached to a lower surface of the printed circuit board, and a heat sink exposed through the chip arrangement region. It can be configured to include a light emitting diode chip. In particular, a plurality of through holes is formed in one region of the heat sink in which the light emitting diode chip is mounted. Furthermore, a plurality of grooves may be formed on the rear surface of the heat sink.
Further, the printed circuit board may be a flexible printed circuit board including a base layer, a circuit pattern layer, and a cover layer protecting the circuit pattern layer, wherein the light emitting diode chip may be electrically connected to the circuit pattern layer through a bonding wire. have.
In addition, the light emitting diode chip may be attached to one region of the heat sink exposed by the chip arrangement region with a thermally conductive adhesive layer, wherein at least one of silver (Ag), solder cream, silicon, and thermal compound is used as the thermally conductive adhesive layer. Can be used.
In the light emitting diode package according to the present invention, a predetermined region of the printed circuit board on which the light emitting diode chip is to be mounted is opened, and the light emitting diode chip can be directly attached to the heat sink through the opening. Therefore, in dissipating heat generated in the light emitting diode chip by the heat sink, its efficiency can be greatly increased. Furthermore, since a plurality of through holes are formed in a predetermined region of the heat sink in which the LED chip is mounted, heat generated in the LED chip can be radiated by direct contact with the atmosphere. In addition, since a plurality of grooves are formed on the rear surface of the heat sink, heat dissipation efficiency of the heat sink can be improved by increasing the area where the heat sink contacts the atmosphere due to the grooves.
1 is a cross-sectional view schematically showing the structure of a light emitting diode package according to the present invention.
2 is a plan view of a heat sink used in a light emitting diode package according to the present invention.
Hereinafter, with reference to the accompanying drawings a preferred embodiment of a light emitting diode package according to the present invention will be described in detail.
The light emitting diode package according to the present invention includes a printed
Referring to Figure 1, the detailed configuration of the LED package according to the present invention, the printed
In particular, an N-electrode pad (not shown) and a P-electrode pad (not shown) may be formed in the light
Meanwhile. As shown in FIG. 2, the
In addition, as shown in FIG. 1, a plurality of
Although a preferred embodiment of the present invention has been described so far, those skilled in the art will be able to implement in a modified form without departing from the essential characteristics of the present invention. Therefore, the embodiments of the present invention described herein are to be considered in descriptive sense only and not for purposes of limitation, and the scope of the present invention is shown in the appended claims rather than the foregoing description, and all differences within the equivalent scope of the present invention Should be interpreted as being included in.
10: light emitting diode chip 12: bonding wire
14 lens 16 adhesive layer
20: printed circuit board 22: base layer
24: circuit pattern layer 26: cover layer
30: insulating layer 40: heat sink
42: groove 44: through hole
Claims (5)
And a plurality of through holes formed in one region of the heat sink in which the light emitting diode chip is mounted.
The printed circuit board is a flexible printed circuit board including a base layer, a circuit pattern layer, and a cover layer protecting the circuit pattern layer, and the light emitting diode chip is electrically connected to the circuit pattern layer through a bonding wire. LED package.
The light emitting diode chip is a light emitting diode package, characterized in that attached to a region of the heat sink exposed by the chip arrangement region as a thermally conductive adhesive layer.
The thermally conductive adhesive layer is a light emitting diode package, characterized in that made of at least one of silver (Ag), solder cream, silicon and thermal compound.
A light emitting diode package, characterized in that a plurality of grooves are formed on the back of the heat sink.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100131371A KR101166066B1 (en) | 2010-12-21 | 2010-12-21 | Light Emitting Diode Package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100131371A KR101166066B1 (en) | 2010-12-21 | 2010-12-21 | Light Emitting Diode Package |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20120070000A true KR20120070000A (en) | 2012-06-29 |
KR101166066B1 KR101166066B1 (en) | 2012-07-19 |
Family
ID=46687961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100131371A KR101166066B1 (en) | 2010-12-21 | 2010-12-21 | Light Emitting Diode Package |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101166066B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101329703B1 (en) * | 2012-12-12 | 2013-11-14 | 주식회사 디씨앤 | Heat sink attached led package pcb that can be improved its reflexibility |
CN115236138A (en) * | 2022-06-16 | 2022-10-25 | 湖北深紫科技有限公司 | Light-emitting diode-based light-excited gas sensor and preparation method thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105870301A (en) * | 2016-06-08 | 2016-08-17 | 广州硅能照明有限公司 | LED (Light Emitting Diode) optical engine packaging structure and processing method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101210090B1 (en) | 2006-03-03 | 2012-12-07 | 엘지이노텍 주식회사 | Metal core printed circuit board and light-emitting diode packaging method thereof |
JP2007273591A (en) | 2006-03-30 | 2007-10-18 | Kyocera Corp | Light emitting element wiring board and light emitting device |
-
2010
- 2010-12-21 KR KR1020100131371A patent/KR101166066B1/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101329703B1 (en) * | 2012-12-12 | 2013-11-14 | 주식회사 디씨앤 | Heat sink attached led package pcb that can be improved its reflexibility |
CN115236138A (en) * | 2022-06-16 | 2022-10-25 | 湖北深紫科技有限公司 | Light-emitting diode-based light-excited gas sensor and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
KR101166066B1 (en) | 2012-07-19 |
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