KR20120070000A - Light emitting diode package - Google Patents

Light emitting diode package Download PDF

Info

Publication number
KR20120070000A
KR20120070000A KR1020100131371A KR20100131371A KR20120070000A KR 20120070000 A KR20120070000 A KR 20120070000A KR 1020100131371 A KR1020100131371 A KR 1020100131371A KR 20100131371 A KR20100131371 A KR 20100131371A KR 20120070000 A KR20120070000 A KR 20120070000A
Authority
KR
South Korea
Prior art keywords
light emitting
emitting diode
heat sink
chip
circuit board
Prior art date
Application number
KR1020100131371A
Other languages
Korean (ko)
Other versions
KR101166066B1 (en
Inventor
임준성
Original Assignee
주식회사 루셈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 루셈 filed Critical 주식회사 루셈
Priority to KR1020100131371A priority Critical patent/KR101166066B1/en
Publication of KR20120070000A publication Critical patent/KR20120070000A/en
Application granted granted Critical
Publication of KR101166066B1 publication Critical patent/KR101166066B1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/642Heat extraction or cooling elements characterized by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: A light emitting diode package is provided to improve heat dissipation by forming a through hole in a heat sink area for mounting a light emitting diode chip. CONSTITUTION: A chip arrangement area is opened on a printed circuit board(20). The printed circuit board comprises a base layer(22), a circuit pattern layer(24), and a cover layer(26). A heat sink(40) is attached to the lower side of the printed circuit board. A light emitting diode chip(10) is mounted on the heat sink exposed through the chip arrangement area. A through hole(44) is formed in one region of the heat sink which mounts a light emitting diode chip.

Description

Light Emitting Diode Package

The present invention relates to a light emitting diode package, and more particularly, to a light emitting diode package having a heat sink attached to a lower portion of a printed circuit board.

In general, a light emitting diode (hereinafter referred to as "LED") refers to a light emitting device in which electrons and grains meet and emit light at a P-N junction by application of a current. The LED device may be mounted on a printed circuit board and manufactured in a package form to emit light by applying a current. Such LEDs have recently been used as backlights for lighting, liquid crystal displays (LCDs), etc., and in particular, their use is gradually increasing due to their excellent efficiency and light emission characteristics compared to other light emitting devices.

On the other hand, as LEDs are gradually miniaturized, some important problems are emerging, among which heat dissipation is a big problem. Heat generated from the LED chip in the LED package has a direct impact on the light emitting performance and lifetime. The reason is that if heat generated in the LED chip is sustained, dislocations, mismatches, etc. occur in the crystal structure of the semiconductor constituting the LED chip. Moreover, high power LED packages have recently been developed, which operate in a high voltage environment, and such high voltages generate more heat in the LED chips.

As a method for improving heat dissipation characteristics in an LED package, a structure for dissipating heat by attaching a plate-shaped heat sink using a predetermined metal plate to a rear surface of a printed circuit board on which an LED chip is mounted has been conventionally proposed. In this structure, the heat generated from the LED chip is discharged through the heat sink through the printed circuit board, that is, the heat generated from the LED chip heat exchanges with the printed circuit board, and heat exchange between the printed circuit board and the heat sink is performed again. Proceed. Such a heat exchange method is complicated in its process, and in particular, its heat dissipation efficiency is not sufficient for use in a high power LED package or a large LED module.

The present invention has been made to solve the above-mentioned problems of the prior art, by providing a light emitting diode package having a dual heat dissipation mechanism by heat generated in the light emitting diode chip is in direct contact with the heat sink and the atmosphere, compared to the conventional An object of the present invention is to provide a light emitting diode package that can more effectively radiate heat.

The light emitting diode package according to the present invention is mounted on a printed circuit board in which a chip arrangement region in which a light emitting diode chip is to be arranged is opened, a heat sink attached to a lower surface of the printed circuit board, and a heat sink exposed through the chip arrangement region. It can be configured to include a light emitting diode chip. In particular, a plurality of through holes is formed in one region of the heat sink in which the light emitting diode chip is mounted. Furthermore, a plurality of grooves may be formed on the rear surface of the heat sink.

Further, the printed circuit board may be a flexible printed circuit board including a base layer, a circuit pattern layer, and a cover layer protecting the circuit pattern layer, wherein the light emitting diode chip may be electrically connected to the circuit pattern layer through a bonding wire. have.

In addition, the light emitting diode chip may be attached to one region of the heat sink exposed by the chip arrangement region with a thermally conductive adhesive layer, wherein at least one of silver (Ag), solder cream, silicon, and thermal compound is used as the thermally conductive adhesive layer. Can be used.

In the light emitting diode package according to the present invention, a predetermined region of the printed circuit board on which the light emitting diode chip is to be mounted is opened, and the light emitting diode chip can be directly attached to the heat sink through the opening. Therefore, in dissipating heat generated in the light emitting diode chip by the heat sink, its efficiency can be greatly increased. Furthermore, since a plurality of through holes are formed in a predetermined region of the heat sink in which the LED chip is mounted, heat generated in the LED chip can be radiated by direct contact with the atmosphere. In addition, since a plurality of grooves are formed on the rear surface of the heat sink, heat dissipation efficiency of the heat sink can be improved by increasing the area where the heat sink contacts the atmosphere due to the grooves.

1 is a cross-sectional view schematically showing the structure of a light emitting diode package according to the present invention.
2 is a plan view of a heat sink used in a light emitting diode package according to the present invention.

Hereinafter, with reference to the accompanying drawings a preferred embodiment of a light emitting diode package according to the present invention will be described in detail.

The light emitting diode package according to the present invention includes a printed circuit board 20 having a chip arrangement area A on which a light emitting diode chip is to be opened, a heat sink 40 attached to a bottom surface of the printed circuit board 20, The light emitting diode chip 10 is mounted on the heat sink 40 exposed through the chip arrangement region A.

Referring to Figure 1, the detailed configuration of the LED package according to the present invention, the printed circuit board 20, for example, the base layer 22 made of polyimide, the circuit pattern layer 24 made of metal such as copper And a flexible printed circuit board composed of a cover layer 26 protecting the circuit pattern layer 24. In addition, a heat sink 40 is attached to a lower portion of the printed circuit board 20 through a predetermined insulating layer 30. The heat sink 40 may be formed of a material having excellent thermal conductivity, for example, a metal such as silver, copper, aluminum, or an alloy thereof. Here, the chip arrangement region A in which the region where the light emitting diode chip 10 is to be arranged is opened is formed in the substrate 20. The LED chip 10 is directly attached to one region of the heat sink 40 exposed by the chip arrangement region A. Referring to FIG.

In particular, an N-electrode pad (not shown) and a P-electrode pad (not shown) may be formed in the light emitting diode chip 10, and the N-electrode pad and the P-electrode pad may be formed by the bonding wire 12. Each of the circuit pattern layers 24 of the substrate 20 may be electrically connected to each other. In addition, when the light emitting diode chip 10 is attached to the heat sink 40, the light emitting diode chip 10 may be attached using, for example, the thermal conductive adhesive layer 16. Here, at least one of silver (Ag), solder cream, silicon, and thermal compound may be used as the thermal conductive adhesive layer 16. After the light emitting diode chip 10 is attached to the heat sink 40, a predetermined lens 14 may be formed on the light emitting diode chip 10, and the substrate on which the light emitting diode chip 10 is mounted. In the peripheral area of 20, passive elements such as resistors and capacitors, and active elements such as IC chips may be mounted together.

Meanwhile. As shown in FIG. 2, the heat sink 40 of the light emitting diode package according to the present invention is characterized in that a plurality of through holes 44 are formed in a region where the light emitting diode chip 10 is mounted. In the LED package having such a structure, since the LED chip 10 directly contacts the heat sink 40, heat generated in the LED chip 10 may be directly radiated through the heat sink 40. Furthermore, since the area where the light emitting diode chip 10 contacts the air is increased by the through hole 44 formed in the chip arrangement region A, the heat dissipation effect of the light emitting diode package may be further improved. Here, although the shape of the through hole 44 is circular in FIG. 2, the present invention is not limited thereto, and the shape and number of the through holes may be variously modified.

In addition, as shown in FIG. 1, a plurality of grooves 42 may be formed on the rear surface of the heat sink 40. Due to the grooves 42, the area where the rear surface of the heat sink 40 contacts the air is increased, so that heat dissipation efficiency is increased when heat generated from the light emitting diode chip 10 is radiated through the heat sink 40. Can be further improved. 1 and 2, the grooves 42 are not formed in the chip arrangement region A in which the through holes 44 are formed. However, the grooves 42 are not formed on the rear surface of the heat sink 40 in the chip arrangement region A. Those skilled in the art that the groove 42 may be formed together with the through hole 44 will be readily understood.

Although a preferred embodiment of the present invention has been described so far, those skilled in the art will be able to implement in a modified form without departing from the essential characteristics of the present invention. Therefore, the embodiments of the present invention described herein are to be considered in descriptive sense only and not for purposes of limitation, and the scope of the present invention is shown in the appended claims rather than the foregoing description, and all differences within the equivalent scope of the present invention Should be interpreted as being included in.

10: light emitting diode chip 12: bonding wire
14 lens 16 adhesive layer
20: printed circuit board 22: base layer
24: circuit pattern layer 26: cover layer
30: insulating layer 40: heat sink
42: groove 44: through hole

Claims (5)

A printed circuit board having a chip arrangement region in which a light emitting diode chip is to be disposed; A heat sink attached to a bottom surface of the printed circuit board; And a light emitting diode chip mounted on the heat sink exposed through the chip arrangement region.
And a plurality of through holes formed in one region of the heat sink in which the light emitting diode chip is mounted.
The method of claim 1,
The printed circuit board is a flexible printed circuit board including a base layer, a circuit pattern layer, and a cover layer protecting the circuit pattern layer, and the light emitting diode chip is electrically connected to the circuit pattern layer through a bonding wire. LED package.
The method of claim 1,
The light emitting diode chip is a light emitting diode package, characterized in that attached to a region of the heat sink exposed by the chip arrangement region as a thermally conductive adhesive layer.
The method of claim 3,
The thermally conductive adhesive layer is a light emitting diode package, characterized in that made of at least one of silver (Ag), solder cream, silicon and thermal compound.
The method of claim 1,
A light emitting diode package, characterized in that a plurality of grooves are formed on the back of the heat sink.
KR1020100131371A 2010-12-21 2010-12-21 Light Emitting Diode Package KR101166066B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100131371A KR101166066B1 (en) 2010-12-21 2010-12-21 Light Emitting Diode Package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100131371A KR101166066B1 (en) 2010-12-21 2010-12-21 Light Emitting Diode Package

Publications (2)

Publication Number Publication Date
KR20120070000A true KR20120070000A (en) 2012-06-29
KR101166066B1 KR101166066B1 (en) 2012-07-19

Family

ID=46687961

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100131371A KR101166066B1 (en) 2010-12-21 2010-12-21 Light Emitting Diode Package

Country Status (1)

Country Link
KR (1) KR101166066B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101329703B1 (en) * 2012-12-12 2013-11-14 주식회사 디씨앤 Heat sink attached led package pcb that can be improved its reflexibility
CN115236138A (en) * 2022-06-16 2022-10-25 湖北深紫科技有限公司 Light-emitting diode-based light-excited gas sensor and preparation method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105870301A (en) * 2016-06-08 2016-08-17 广州硅能照明有限公司 LED (Light Emitting Diode) optical engine packaging structure and processing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101210090B1 (en) 2006-03-03 2012-12-07 엘지이노텍 주식회사 Metal core printed circuit board and light-emitting diode packaging method thereof
JP2007273591A (en) 2006-03-30 2007-10-18 Kyocera Corp Light emitting element wiring board and light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101329703B1 (en) * 2012-12-12 2013-11-14 주식회사 디씨앤 Heat sink attached led package pcb that can be improved its reflexibility
CN115236138A (en) * 2022-06-16 2022-10-25 湖北深紫科技有限公司 Light-emitting diode-based light-excited gas sensor and preparation method thereof

Also Published As

Publication number Publication date
KR101166066B1 (en) 2012-07-19

Similar Documents

Publication Publication Date Title
US7586126B2 (en) Light emitting diode lighting module with improved heat dissipation structure
JP2010530632A (en) Metal-based optical device package module and manufacturing method thereof
JP2011233801A (en) Light-emitting element module
US7939919B2 (en) LED-packaging arrangement and light bar employing the same
US9801274B2 (en) Light emitting device
KR101051488B1 (en) Method for manufacturing light emitting diode unit, and light emitting diode unit manufactured by this method
KR101320514B1 (en) Light emitting diode package by chip on board
JP5038355B2 (en) Optical semiconductor device module
KR101166066B1 (en) Light Emitting Diode Package
JP5496975B2 (en) Semiconductor device module
US10784423B2 (en) Light emitting device
JP2009147258A (en) Led package and light-emitting module
JP6210720B2 (en) LED package
TW201407748A (en) LED light bar
KR20090033592A (en) Led array module having improved heat dissipation charateristics
JP2012253073A (en) Semiconductor device
KR20120069999A (en) Light emitting diode package
KR100979971B1 (en) Method of manufacturing light emitting diode unit and light emitting diode unit manufactured by the method
KR101259876B1 (en) Led package having a thermoelectric element and method for manufacturin thereof
KR101230321B1 (en) LED Package having improved light irradiating and heat dispersing function
KR101237520B1 (en) Light emitting diode package
TWI648885B (en) Light emitting device
KR101180378B1 (en) LED device improved radient heat efficiency and fabricating method thereof
KR20120067542A (en) Light emitting module and backlight unit using the same
KR20110129370A (en) Light emitting diode

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20150710

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee