KR20120069999A - Light emitting diode package - Google Patents
Light emitting diode package Download PDFInfo
- Publication number
- KR20120069999A KR20120069999A KR1020100131370A KR20100131370A KR20120069999A KR 20120069999 A KR20120069999 A KR 20120069999A KR 1020100131370 A KR1020100131370 A KR 1020100131370A KR 20100131370 A KR20100131370 A KR 20100131370A KR 20120069999 A KR20120069999 A KR 20120069999A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting diode
- chip
- heat sink
- circuit board
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims description 20
- 239000012790 adhesive layer Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000006071 cream Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Images
Classifications
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- H01L33/20—
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- H01L33/641—
-
- H01L33/642—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
Description
The present invention relates to a light emitting diode package, and more particularly, to a light emitting diode package having a heat sink attached to a lower portion of a printed circuit board.
In general, a light emitting diode (hereinafter referred to as "LED") refers to a light emitting device in which electrons and grains meet and emit light at a P-N junction by application of a current. The LED device may be mounted on a printed circuit board and manufactured in a package form to emit light by applying a current. Such LEDs have recently been used as backlights for lighting, liquid crystal displays (LCDs), etc., and in particular, their use is gradually increasing due to their excellent efficiency and light emission characteristics compared to other light emitting devices.
On the other hand, as LEDs are gradually miniaturized, some important problems are emerging, among which heat dissipation is a big problem. Heat generated from the LED chip in the LED package has a direct impact on the light emitting performance and lifetime. The reason is that if heat generated in the LED chip is sustained, dislocations, mismatches, etc. occur in the crystal structure of the semiconductor constituting the LED chip. Moreover, high power LED packages have recently been developed, which operate in a high voltage environment, and such high voltages generate more heat in the LED chips.
As a method for improving heat dissipation characteristics in an LED package, a structure for dissipating heat by attaching a plate-shaped heat sink using a predetermined metal plate to a rear surface of a printed circuit board on which an LED chip is mounted has been conventionally proposed. In this structure, the heat generated from the LED chip is discharged through the heat sink through the printed circuit board, that is, the heat generated from the LED chip heat exchanges with the printed circuit board, and heat exchange between the printed circuit board and the heat sink is performed again. Proceed. Such a heat exchange method is complicated in its process, and in particular, its heat dissipation efficiency is not sufficient for use in a high power LED package or a large LED module.
The present invention has been made to solve the above-mentioned problems of the prior art, and heats the LED chip by forming an opening in the printed circuit board in the region where the LED chip is to be mounted and forming a trench in the heat sink attached to the bottom of the LED chip. An object of the present invention is to provide a light emitting diode package capable of dissipating heat more effectively than in the related art through a structure attached to a trench of a sink.
In addition, another object of the present invention is to provide a light emitting diode package which is advantageous for thinning the package by reducing the mounting height of the light emitting diode chip.
The light emitting diode package according to the present invention includes a printed circuit board having a chip arrangement region in which a light emitting diode chip is to be opened, a heat sink having a trench formed in a lower portion of the printed circuit board and at least partially corresponding to the chip arrangement region; And a light emitting diode chip mounted inside the trench of the heat sink exposed through the chip arrangement region.
The printed circuit board may be a flexible printed circuit board including a base layer, a circuit pattern layer, and a cover layer protecting the circuit pattern layer, wherein the light emitting diode chip may be electrically connected to the circuit pattern layer through a bonding wire. have.
The light emitting diode chip may be attached to the bottom surface of the trench exposed by the chip arrangement region with a thermally conductive adhesive layer, wherein the thermally conductive adhesive layer may use at least one of silver (Ag), solder cream, silicon, and thermal compound. . In addition, a plurality of grooves may be formed on the rear surface of the heat sink.
In the light emitting diode package according to the present invention, a predetermined region of the printed circuit board on which the light emitting diode chip is to be mounted is opened, and the light emitting diode chip can be directly attached to the heat sink through the opening. Therefore, in dissipating heat generated in the light emitting diode chip by the heat sink, its efficiency can be greatly increased. In particular, since a trench is formed in a predetermined region of the heat sink in which the light emitting diode chip is mounted, heat generated in the light emitting diode chip can be more effectively radiated by the heat sink, and the light emitting diode is disposed inside the trench of the heat sink. Therefore, the mounting height of the chip can be reduced, which is advantageous for thinning the package. In addition, since a plurality of grooves are formed on the rear surface of the heat sink, heat dissipation efficiency of the heat sink can be improved by increasing the area where the heat sink contacts the atmosphere due to the grooves.
1 is a cross-sectional view schematically showing the structure of a light emitting diode package according to the present invention.
Hereinafter, with reference to the accompanying drawings a preferred embodiment of a light emitting diode package according to the present invention will be described in detail.
The light emitting diode package according to the present invention includes a printed circuit board 20 having a chip arrangement area A on which a light emitting diode chip is to be opened, a
Referring to Figure 1, the detailed configuration of the LED package according to the present invention, the printed circuit board 20, for example, the
In particular, an N-electrode pad (not shown) and a P-electrode pad (not shown) may be formed in the light
Meanwhile. As shown in FIG. 1, in the
In addition, as shown in FIG. 1, a plurality of
Although a preferred embodiment of the present invention has been described so far, those skilled in the art will be able to implement in a modified form without departing from the essential characteristics of the present invention. Therefore, the embodiments of the present invention described herein are to be considered in descriptive sense only and not for purposes of limitation, and the scope of the present invention is shown in the appended claims rather than the foregoing description, and all differences within the equivalent scope of the present invention Should be interpreted as being included in.
10: light emitting diode chip 12: bonding wire
14
20: printed circuit board 22: base layer
24: circuit pattern layer 26: cover layer
30: insulating layer 40: heat sink
42: home 44: trench
Claims (5)
A heat sink attached to a bottom surface of the printed circuit board and having a trench formed in at least a partial region corresponding to the chip arrangement region; And
And a light emitting diode chip mounted in the trench of the heat sink exposed through the chip arrangement region.
The printed circuit board is a flexible printed circuit board including a base layer, a circuit pattern layer, and a cover layer protecting the circuit pattern layer, and the light emitting diode chip is electrically connected to the circuit pattern layer through a bonding wire. LED package.
The light emitting diode chip is a light emitting diode package, characterized in that attached to the bottom surface of the trench exposed by the chip arrangement region with a thermally conductive adhesive layer.
The thermally conductive adhesive layer is a light emitting diode package, characterized in that made of at least one of silver (Ag), solder cream, silicon and thermal compound.
A light emitting diode package, characterized in that a plurality of grooves are formed on the back of the heat sink.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100131370A KR20120069999A (en) | 2010-12-21 | 2010-12-21 | Light emitting diode package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100131370A KR20120069999A (en) | 2010-12-21 | 2010-12-21 | Light emitting diode package |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20120069999A true KR20120069999A (en) | 2012-06-29 |
Family
ID=46687960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100131370A KR20120069999A (en) | 2010-12-21 | 2010-12-21 | Light emitting diode package |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20120069999A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN118016782A (en) * | 2024-04-10 | 2024-05-10 | 山西中科潞安紫外光电科技有限公司 | Deep ultraviolet LED device and preparation method thereof |
-
2010
- 2010-12-21 KR KR1020100131370A patent/KR20120069999A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN118016782A (en) * | 2024-04-10 | 2024-05-10 | 山西中科潞安紫外光电科技有限公司 | Deep ultraviolet LED device and preparation method thereof |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E601 | Decision to refuse application |