KR20120059569A - 인-시츄 메모리 어닐링 - Google Patents

인-시츄 메모리 어닐링 Download PDF

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Publication number
KR20120059569A
KR20120059569A KR1020127007342A KR20127007342A KR20120059569A KR 20120059569 A KR20120059569 A KR 20120059569A KR 1020127007342 A KR1020127007342 A KR 1020127007342A KR 20127007342 A KR20127007342 A KR 20127007342A KR 20120059569 A KR20120059569 A KR 20120059569A
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KR
South Korea
Prior art keywords
memory
data
memory device
anneal
devices
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020127007342A
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English (en)
Korean (ko)
Inventor
이안 쉐퍼
Original Assignee
램버스 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램버스 인코포레이티드 filed Critical 램버스 인코포레이티드
Publication of KR20120059569A publication Critical patent/KR20120059569A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/10—Address translation
    • G06F12/1009—Address translation using page tables, e.g. page table structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1016—Performance improvement
    • G06F2212/1024—Latency reduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Hardware Redundancy (AREA)
KR1020127007342A 2009-08-21 2010-06-29 인-시츄 메모리 어닐링 Ceased KR20120059569A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23596409P 2009-08-21 2009-08-21
US61/235,964 2009-08-21
US24347909P 2009-09-17 2009-09-17
US61/243,479 2009-09-17
PCT/US2010/040322 WO2011022123A1 (en) 2009-08-21 2010-06-29 In-situ memory annealing

Publications (1)

Publication Number Publication Date
KR20120059569A true KR20120059569A (ko) 2012-06-08

Family

ID=43607275

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127007342A Ceased KR20120059569A (ko) 2009-08-21 2010-06-29 인-시츄 메모리 어닐링

Country Status (5)

Country Link
EP (1) EP2467855A4 (enrdf_load_stackoverflow)
JP (1) JP2013502647A (enrdf_load_stackoverflow)
KR (1) KR20120059569A (enrdf_load_stackoverflow)
CN (1) CN102576569A (enrdf_load_stackoverflow)
WO (1) WO2011022123A1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120124045A (ko) * 2011-05-02 2012-11-12 매크로닉스 인터내셔널 컴퍼니 리미티드 열적으로 보조되고 다이오드 스트래핑을 구비하는 플래시 메모리
KR20230062324A (ko) * 2021-10-29 2023-05-09 매크로닉스 인터내셔널 컴퍼니 리미티드 3ｄ 플래시 메모리 모듈 칩 및 그 제조 방법

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US9001590B2 (en) 2011-05-02 2015-04-07 Macronix International Co., Ltd. Method for operating a semiconductor structure
US8824212B2 (en) 2011-05-02 2014-09-02 Macronix International Co., Ltd. Thermally assisted flash memory with segmented word lines
US8724393B2 (en) 2011-05-02 2014-05-13 Macronix International Co., Ltd. Thermally assisted flash memory with diode strapping
TWI508075B (zh) * 2011-06-09 2015-11-11 Macronix Int Co Ltd 熱協助介電電荷捕捉快閃記憶體
CN102831923B (zh) * 2011-06-14 2015-09-30 旺宏电子股份有限公司 热协助介电电荷捕捉闪存
TWI514387B (zh) * 2012-02-09 2015-12-21 Macronix Int Co Ltd 具有分段字線之熱輔助快閃記憶體
CN102662799B (zh) * 2012-04-13 2015-01-21 华为技术有限公司 数据备份的方法、服务器及热备份系统
US9348748B2 (en) 2013-12-24 2016-05-24 Macronix International Co., Ltd. Heal leveling
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
KR102142590B1 (ko) 2014-06-16 2020-08-07 삼성전자 주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작방법
US9792227B2 (en) * 2014-08-19 2017-10-17 Samsung Electronics Co., Ltd. Heterogeneous unified memory
WO2016051512A1 (ja) * 2014-09-30 2016-04-07 株式会社日立製作所 分散型ストレージシステム
US9043638B1 (en) * 2014-11-14 2015-05-26 Quanta Computer Inc. Method for enhancing memory fault tolerance
US9563505B2 (en) 2015-05-26 2017-02-07 Winbond Electronics Corp. Methods and systems for nonvolatile memory data management
US9836349B2 (en) 2015-05-29 2017-12-05 Winbond Electronics Corp. Methods and systems for detecting and correcting errors in nonvolatile memory
US10552320B2 (en) * 2016-04-01 2020-02-04 Intel Corporation Using a projected out of memory score to selectively terminate a process without transitioning to a background mode
KR20180058456A (ko) * 2016-11-24 2018-06-01 삼성전자주식회사 메모리를 관리하는 방법 및 장치.
CN112041825B (zh) * 2018-05-02 2025-06-27 株式会社半导体能源研究所 半导体装置
CN110659226A (zh) * 2018-06-28 2020-01-07 晨星半导体股份有限公司 用以存取数据的方法以及相关电路
KR102731057B1 (ko) * 2018-09-21 2024-11-15 삼성전자주식회사 메모리 장치와 통신하는 데이터 처리 장치 및 방법
US11567670B2 (en) * 2019-10-25 2023-01-31 Samsung Electronics Co., Ltd. Firmware-based SSD block failure prediction and avoidance scheme
US11500753B2 (en) 2020-09-02 2022-11-15 Samsung Electronics Co., Ltd. Multi-non-volatile memory solid state drive block-level failure prediction with unified device log
KR20220150552A (ko) * 2021-05-04 2022-11-11 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
JP2023127308A (ja) * 2022-03-01 2023-09-13 キオクシア株式会社 メモリシステム及びメモリシステムの処理方法
CN114944354B (zh) * 2022-07-21 2022-09-27 江苏邑文微电子科技有限公司 晶圆退火设备的异常校验方法和装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3561002B2 (ja) * 1994-05-18 2004-09-02 富士通株式会社 ディスク装置
JP2004310930A (ja) * 2003-04-08 2004-11-04 Renesas Technology Corp 不揮発性半導体記憶装置
US7092288B2 (en) * 2004-02-04 2006-08-15 Atmel Corporation Non-volatile memory array with simultaneous write and erase feature
US7072219B1 (en) * 2004-12-28 2006-07-04 Macronix International Co., Ltd. Method and apparatus for operating a non-volatile memory array
US20060184718A1 (en) * 2005-02-16 2006-08-17 Sinclair Alan W Direct file data programming and deletion in flash memories
US7495954B2 (en) * 2006-10-13 2009-02-24 Sandisk Corporation Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory
US8074011B2 (en) * 2006-12-06 2011-12-06 Fusion-Io, Inc. Apparatus, system, and method for storage space recovery after reaching a read count limit
US8008643B2 (en) * 2007-02-21 2011-08-30 Macronix International Co., Ltd. Phase change memory cell with heater and method for fabricating the same
US7876621B2 (en) * 2007-04-23 2011-01-25 Sandisk Il Ltd. Adaptive dynamic reading of flash memories
KR101469831B1 (ko) * 2007-04-30 2014-12-09 삼성전자주식회사 향상된 읽기 성능을 갖는 멀티-레벨 상변환 메모리 장치 및그것의 읽기 방법
JP2009037670A (ja) * 2007-07-31 2009-02-19 Toshiba Corp フラッシュメモリ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120124045A (ko) * 2011-05-02 2012-11-12 매크로닉스 인터내셔널 컴퍼니 리미티드 열적으로 보조되고 다이오드 스트래핑을 구비하는 플래시 메모리
KR20230062324A (ko) * 2021-10-29 2023-05-09 매크로닉스 인터내셔널 컴퍼니 리미티드 3ｄ 플래시 메모리 모듈 칩 및 그 제조 방법

Also Published As

Publication number Publication date
CN102576569A (zh) 2012-07-11
EP2467855A1 (en) 2012-06-27
JP2013502647A (ja) 2013-01-24
WO2011022123A1 (en) 2011-02-24
EP2467855A4 (en) 2013-08-21

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