EP2467855A4 - In-situ memory annealing - Google Patents
In-situ memory annealingInfo
- Publication number
- EP2467855A4 EP2467855A4 EP10810328.4A EP10810328A EP2467855A4 EP 2467855 A4 EP2467855 A4 EP 2467855A4 EP 10810328 A EP10810328 A EP 10810328A EP 2467855 A4 EP2467855 A4 EP 2467855A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- memory device
- memory
- another
- event
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000137 annealing Methods 0.000 title 1
- 238000011065 in-situ storage Methods 0.000 title 1
- 230000015556 catabolic process Effects 0.000 abstract 2
- 238000006731 degradation reaction Methods 0.000 abstract 2
- 238000012423 maintenance Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/10—Address translation
- G06F12/1009—Address translation using page tables, e.g. page table structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1016—Performance improvement
- G06F2212/1024—Latency reduction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Hardware Redundancy (AREA)
Abstract
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23596409P | 2009-08-21 | 2009-08-21 | |
US24347909P | 2009-09-17 | 2009-09-17 | |
PCT/US2010/040322 WO2011022123A1 (en) | 2009-08-21 | 2010-06-29 | In-situ memory annealing |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2467855A1 EP2467855A1 (en) | 2012-06-27 |
EP2467855A4 true EP2467855A4 (en) | 2013-08-21 |
Family
ID=43607275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10810328.4A Withdrawn EP2467855A4 (en) | 2009-08-21 | 2010-06-29 | In-situ memory annealing |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2467855A4 (en) |
JP (1) | JP2013502647A (en) |
KR (1) | KR20120059569A (en) |
CN (1) | CN102576569A (en) |
WO (1) | WO2011022123A1 (en) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8488387B2 (en) * | 2011-05-02 | 2013-07-16 | Macronix International Co., Ltd. | Thermally assisted dielectric charge trapping flash |
US9001590B2 (en) | 2011-05-02 | 2015-04-07 | Macronix International Co., Ltd. | Method for operating a semiconductor structure |
US8824212B2 (en) | 2011-05-02 | 2014-09-02 | Macronix International Co., Ltd. | Thermally assisted flash memory with segmented word lines |
US8724393B2 (en) | 2011-05-02 | 2014-05-13 | Macronix International Co., Ltd. | Thermally assisted flash memory with diode strapping |
TWI508075B (en) * | 2011-06-09 | 2015-11-11 | Macronix Int Co Ltd | Thermally assisted dielectric charge trapping flash |
CN102831923B (en) * | 2011-06-14 | 2015-09-30 | 旺宏电子股份有限公司 | Heat assists dielectric charge catch flash memory |
TWI514387B (en) * | 2012-02-09 | 2015-12-21 | Macronix Int Co Ltd | Thermally assisted flash memory with segmented word lines |
CN102662799B (en) * | 2012-04-13 | 2015-01-21 | 华为技术有限公司 | Data backup method, server and hot backup system |
US9348748B2 (en) | 2013-12-24 | 2016-05-24 | Macronix International Co., Ltd. | Heal leveling |
US9559113B2 (en) | 2014-05-01 | 2017-01-31 | Macronix International Co., Ltd. | SSL/GSL gate oxide in 3D vertical channel NAND |
KR102142590B1 (en) | 2014-06-16 | 2020-08-07 | 삼성전자 주식회사 | Resistive Memory Device and Operating Method thereof |
US9792227B2 (en) * | 2014-08-19 | 2017-10-17 | Samsung Electronics Co., Ltd. | Heterogeneous unified memory |
WO2016051512A1 (en) * | 2014-09-30 | 2016-04-07 | 株式会社日立製作所 | Distributed storage system |
US9043638B1 (en) * | 2014-11-14 | 2015-05-26 | Quanta Computer Inc. | Method for enhancing memory fault tolerance |
US9563505B2 (en) | 2015-05-26 | 2017-02-07 | Winbond Electronics Corp. | Methods and systems for nonvolatile memory data management |
US9836349B2 (en) | 2015-05-29 | 2017-12-05 | Winbond Electronics Corp. | Methods and systems for detecting and correcting errors in nonvolatile memory |
US10552320B2 (en) * | 2016-04-01 | 2020-02-04 | Intel Corporation | Using a projected out of memory score to selectively terminate a process without transitioning to a background mode |
KR20180058456A (en) * | 2016-11-24 | 2018-06-01 | 삼성전자주식회사 | Method and apparatus for managing a memory |
CN110659226A (en) * | 2018-06-28 | 2020-01-07 | 晨星半导体股份有限公司 | Method for accessing data and related circuit |
KR20200034499A (en) * | 2018-09-21 | 2020-03-31 | 삼성전자주식회사 | Data processing device and method of communicating with memory device |
KR20220150552A (en) * | 2021-05-04 | 2022-11-11 | 에스케이하이닉스 주식회사 | Semiconductor memory device and operating method thereof |
US20230134957A1 (en) * | 2021-10-29 | 2023-05-04 | Macronix International Co., Ltd. | 3d flash memory module chip and method of fabricating the same |
CN114944354B (en) * | 2022-07-21 | 2022-09-27 | 江苏邑文微电子科技有限公司 | Abnormity checking method and device for wafer annealing equipment |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060184718A1 (en) * | 2005-02-16 | 2006-08-17 | Sinclair Alan W | Direct file data programming and deletion in flash memories |
US20090125671A1 (en) * | 2006-12-06 | 2009-05-14 | David Flynn | Apparatus, system, and method for storage space recovery after reaching a read count limit |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3561002B2 (en) * | 1994-05-18 | 2004-09-02 | 富士通株式会社 | Disk unit |
JP2004310930A (en) * | 2003-04-08 | 2004-11-04 | Renesas Technology Corp | Nonvolatile semiconductor storage device |
US7092288B2 (en) * | 2004-02-04 | 2006-08-15 | Atmel Corporation | Non-volatile memory array with simultaneous write and erase feature |
US7072219B1 (en) * | 2004-12-28 | 2006-07-04 | Macronix International Co., Ltd. | Method and apparatus for operating a non-volatile memory array |
US7495954B2 (en) * | 2006-10-13 | 2009-02-24 | Sandisk Corporation | Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory |
US8008643B2 (en) * | 2007-02-21 | 2011-08-30 | Macronix International Co., Ltd. | Phase change memory cell with heater and method for fabricating the same |
US7876621B2 (en) * | 2007-04-23 | 2011-01-25 | Sandisk Il Ltd. | Adaptive dynamic reading of flash memories |
KR101469831B1 (en) * | 2007-04-30 | 2014-12-09 | 삼성전자주식회사 | Multi-level phase change memory device with improved read performance |
JP2009037670A (en) * | 2007-07-31 | 2009-02-19 | Toshiba Corp | Flash memory |
-
2010
- 2010-06-29 KR KR1020127007342A patent/KR20120059569A/en not_active Application Discontinuation
- 2010-06-29 WO PCT/US2010/040322 patent/WO2011022123A1/en active Application Filing
- 2010-06-29 EP EP10810328.4A patent/EP2467855A4/en not_active Withdrawn
- 2010-06-29 CN CN2010800429958A patent/CN102576569A/en active Pending
- 2010-06-29 JP JP2012525570A patent/JP2013502647A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060184718A1 (en) * | 2005-02-16 | 2006-08-17 | Sinclair Alan W | Direct file data programming and deletion in flash memories |
US20090125671A1 (en) * | 2006-12-06 | 2009-05-14 | David Flynn | Apparatus, system, and method for storage space recovery after reaching a read count limit |
Non-Patent Citations (1)
Title |
---|
See also references of WO2011022123A1 * |
Also Published As
Publication number | Publication date |
---|---|
JP2013502647A (en) | 2013-01-24 |
KR20120059569A (en) | 2012-06-08 |
EP2467855A1 (en) | 2012-06-27 |
WO2011022123A1 (en) | 2011-02-24 |
CN102576569A (en) | 2012-07-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20120321 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20130723 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 21/8239 20060101ALI20130717BHEP Ipc: G11C 16/34 20060101AFI20130717BHEP Ipc: H01L 27/115 20060101ALI20130717BHEP |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20140220 |