KR20120015208A - Apparatus and method for cleaning substrate - Google Patents

Apparatus and method for cleaning substrate Download PDF

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Publication number
KR20120015208A
KR20120015208A KR1020100077531A KR20100077531A KR20120015208A KR 20120015208 A KR20120015208 A KR 20120015208A KR 1020100077531 A KR1020100077531 A KR 1020100077531A KR 20100077531 A KR20100077531 A KR 20100077531A KR 20120015208 A KR20120015208 A KR 20120015208A
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KR
South Korea
Prior art keywords
substrate
fluid
fluid supply
nozzle
supplied
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KR1020100077531A
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Korean (ko)
Inventor
정영주
조근제
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세메스 주식회사
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Priority to KR1020100077531A priority Critical patent/KR20120015208A/en
Publication of KR20120015208A publication Critical patent/KR20120015208A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: An apparatus and method for cleaning a substrate are provided to improve the drying efficiency of a substrate by maintaining the temperature of a substrate for a drying process to be over preset temperature. CONSTITUTION: A rotatable substrate support member(310) supports a substrate. A cleaning liquid supply member(340) supplies cleaning liquid to an upper side of the substrate. A first fluid supply member(350) supplies a first fluid, which is heated at higher temperature than room temperature, to a bottom side of the substrate. A second fluid supply member(360) supplies a second fluid to the upper side of the substrate. The flux of the second fluid is different along a longitudinal direction of a second fluid supply nozzle(361).

Description

Substrate cleaning apparatus and method {APPARATUS AND METHOD FOR CLEANING SUBSTRATE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of performing a process such as cleaning or drying on a substrate such as a wafer used in the manufacture of semiconductor devices or a glass substrate used in the manufacture of a flat panel display.

In general, the photoresist coating process, the developing process, the etching process, the chemical vapor deposition process (chemical vapor deposition) are used to process glass substrates or wafers in flat panel display device manufacturing or semiconductor manufacturing processes. Various processes such as deposition process and ashing process are performed.

In addition, in order to remove various contaminants adhering to the substrate during each process, a wet cleaning process using chemical or deionized water and a chemical or pure water remaining on the surface of the substrate may be used. A drying process is carried out for drying.

In general, in the drying process, an apparatus for drying a substrate using an organic solvent having the same isopropyl alcohol is used. When the substrate is dried using the organic solvent, the surface temperature of the substrate is drastically lowered due to the condensation cooling caused by the evaporation of the organic solvent, so that a process for maintaining the substrate at a predetermined temperature is required. However, since the linear velocity of the edge region is greater than the linear velocity of the center region during rotation of the substrate, more heat loss occurs due to rotation than the central region in the edge region of the substrate. This causes a temperature difference between the center region and the edge region of the substrate, which causes the drying failure of the substrate.

The present invention provides a substrate cleaning apparatus and method capable of improving the drying efficiency of a substrate.

The present invention also provides a substrate cleaning apparatus and method capable of uniformly drying the entire surface of the substrate.

The objects of the present invention are not limited to the above-mentioned objects, and other objects that are not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention provides a substrate cleaning apparatus. The substrate cleaning apparatus supports a substrate, and includes a rotatable substrate support member; A cleaning liquid supply member supplying a cleaning liquid to an upper surface of the substrate; A first fluid supply member supplying a first fluid heated to a temperature higher than room temperature to a bottom surface of the substrate; A second fluid supply member for supplying a second fluid to an upper surface of the substrate, wherein the second fluid supply member comprises: a second fluid supply nozzle having a spray hole for ejecting the second fluid; A second fluid supply line connected to the second fluid supply nozzle and supplying the second fluid; It is installed in the second fluid supply line, and includes a heater for heating the second fluid to a temperature higher than room temperature, the flow rate of the second fluid injected from the injection port along the longitudinal direction of the second fluid supply nozzle It is different.

The injection hole is provided as a plurality of injection holes spaced apart from each other along the longitudinal direction of the second fluid supply nozzle, the interval between the injection holes formed in an area adjacent to one end of the second fluid supply nozzle is the second It is different from the spacing between the injection holes formed in the region adjacent to the other end of the fluid supply nozzle. The spacing between the injection holes becomes smaller gradually from one end of the second fluid supply nozzle to the other end.

The injection hole is provided as a plurality of injection holes spaced apart from each other along the longitudinal direction of the second fluid supply nozzle, the size of the injection hole formed in an area adjacent to one end of the second fluid supply nozzle is the second fluid supply It is different from the size of the injection hole formed in the region adjacent to the other end of the nozzle. The size of the injection hole is gradually increased from one end of the second fluid supply nozzle to the other end.

The injection port is provided with a slit hole whose longitudinal direction is parallel to the longitudinal direction of the second fluid supply nozzle, the width of the slit hole area adjacent to one side of the second fluid supply nozzle and the other side of the second fluid supply nozzle The widths of the slit hole regions are different from each other.

A buffer space connected to the injection hole is formed in the second fluid supply nozzle along a length direction of the second fluid supply nozzle, and the second fluid supply line supplies a plurality of second fluids to the buffer space. A plurality of supply lines, wherein the second fluid supply members are respectively installed in the supply lines, and flow control valves for adjusting a flow rate of the second fluid supplied through the supply lines; And a valve control unit controlling the flow regulating valves such that the flow rates of the second fluids supplied from the respective supply lines are different from each other.

The second fluid supply nozzle has at least one blocking plate partitioning the buffer space into a plurality of spaces along a length direction of the second fluid supply nozzle, wherein each of the supply lines is connected to the different spaces. The second fluid is supplied, and the valve controller controls the flow control valve so that the flow rate of the second fluid supplied to the spaces increases from one end of the second fluid supply nozzle to the other end.

The length of the second fluid supply nozzle is greater than or equal to the radius of the substrate.

The present invention also provides a substrate cleaning method. The substrate cleaning method includes a loading step of loading a substrate; A cleaning step of cleaning the substrate by supplying a cleaning liquid to the substrate; And a drying step of supplying a first fluid heated to a temperature higher than room temperature to a bottom surface of the substrate, and supplying a second fluid heated to a temperature higher than room temperature to an upper surface of the substrate to dry the substrate on which cleaning is completed. However, the flow rate of the second fluid supplied to the substrate is different depending on the area of the substrate.

The flow rate of the second fluid supplied to the edge region of the substrate is greater than the flow rate of the second fluid supplied to the central region of the substrate.

The second fluid is simultaneously supplied to the center region and the edge region of the substrate.

The second fluid is a liquid organic solvent.

According to the present invention, the drying efficiency of the substrate is improved because the temperature of the substrate is maintained above the set temperature during the drying process.

Moreover, according to this invention, since the whole surface of a board | substrate is uniformly maintained above set temperature, the whole surface of a board | substrate is dried uniformly.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

1 is a plan view schematically showing the substrate processing equipment of the present invention.
2 is a cross-sectional view illustrating an example of a substrate processing apparatus.
3 is a cross-sectional view briefly showing a second fluid supply member according to an embodiment of the present invention.
4 is a view illustrating the bottom of the second fluid jet nozzle of FIG. 3.
5 is a flowchart illustrating a substrate cleaning method according to an embodiment of the present invention.
6 is a view briefly illustrating a substrate cleaning step of FIG. 5.
7 is a view briefly showing the first drying step.
8 is a view briefly showing a second drying step.
9 is a sectional view schematically showing a second fluid supply member according to another embodiment of the present invention.
FIG. 10 is a view illustrating the bottom of the second fluid jet nozzle of FIG. 9. FIG.
FIG. 11 is a view illustrating a process of supplying a second fluid through the second fluid injection nozzle of FIG. 9.
12 is a sectional view schematically showing a second fluid supply member according to another embodiment of the present invention.
FIG. 13 is a view illustrating the bottom of the second fluid jet nozzle of FIG. 12.
14 is a view illustrating a process of supplying a second fluid through the second fluid injection nozzle of FIG. 12.
15 is a view showing a second fluid supply member according to another embodiment of the present invention.
FIG. 16 is a view illustrating a bottom surface of the second fluid jet nozzle of FIG. 15.
17 is a view illustrating a process of supplying a second fluid through the second fluid injection nozzle of FIG. 15.

The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be interpreted as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape and the like of the components in the drawings are exaggerated to emphasize a more clear description.

1 is a plan view schematically showing the substrate processing equipment of the present invention.

Referring to FIG. 1, the substrate processing facility 1 of the present invention has an index module 10 and a process processing module 20, and the index module 10 has a load port 120 and a transfer frame 140. . The load port 120, the transfer frame 140, and the process module 20 are sequentially arranged in a row. Hereinafter, the direction in which the load port 120, the transfer frame 140, and the processing module 20 are arranged is referred to as a first direction 12, and when viewed from the top, the direction perpendicular to the first direction 12 is observed. The direction is called the second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is called the third direction 16.

The carrier 18 in which the substrate W is accommodated is mounted in the load port 140. A plurality of load ports 120 are provided and they are arranged in a line along the second direction 14. The number of load ports 120 may increase or decrease depending on process efficiency and footprint conditions of the process processing module 20. The carrier 18 is formed with a plurality of slots (not shown) for accommodating the substrates W in a state in which the substrates W are disposed horizontally with respect to the ground. As the carrier 18, a front opening unified pod (FOUP) may be used.

The process module 20 has a transfer chamber 240, a buffer unit 220, and a process chamber 260. The transfer chamber 240 is arranged such that its longitudinal direction is parallel to the first direction 12. Process chambers 260 are disposed at both sides of the transfer chamber 240, respectively. At one side and the other side of the transfer chamber 240, the process chambers 260 are provided to be symmetrical to each other with respect to the transfer chamber 240. One side of the transfer chamber 240 is provided with a plurality of process chambers 260. Some of the process chambers 260 are disposed along the length of the transfer chamber 240. In addition, some of the process chambers 260 are arranged to be stacked on each other. That is, the process chambers 260 may be arranged in an array of A X B on one side of the transfer chamber 240. Where A is the number of process chambers 260 provided in a line along the first direction 12 and B is the number of process chambers 260 provided in a line along the second direction 14. When four or six process chambers 260 are provided on one side of the transfer chamber 240, the process chambers 260 may be arranged in an array of 2 × 2 or 3 × 2. The number of process chambers 260 may increase or decrease. Unlike the above, the process chamber 260 may be provided only on one side of the transfer chamber 240. In addition, unlike the above, the process chamber 260 may be provided as a single layer on one side and both sides of the transfer chamber 240.

The buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 provides a space in which the substrate W stays between the process chamber 260 and the carrier 18 before the substrate W is transported. The buffer unit 220 is provided with a slot (not shown) in which the substrate W is placed therein, and a plurality of slots (not shown) are provided to be spaced apart from each other along the third direction 16. The buffer unit 220 has a surface facing the transfer frame 140 and a surface facing the transfer chamber 240 are opened.

The transfer frame 140 transports the substrate W between the carrier 18 seated in the load port 120 and the buffer unit 220. The transfer frame 140 is provided with an index rail 142 and an index robot 144. The index rail 142 is provided with its longitudinal direction parallel to the second direction 14. The index robot 144 is installed on the index rail 142 and linearly moves in the second direction 14 along the index rail 142. The index robot 144 has a base 144a, a body 144b, and an index arm 144c. The base 144a is installed to be movable along the index rail 142. Body 144b is coupled to base 144a. The body 144b is provided to be movable along the third direction 16 on the base 144a. In addition, the body 144b is provided to be rotatable on the base 144a. The index arm 144c is coupled to the body 144b, which is provided to be movable forward and backward relative to the body 144b. The plurality of index arms 144c are provided to be individually driven. The index arms 144c are arranged to be stacked apart from each other along the third direction 16. Some of the index arms 144c are used when conveying the substrate W from the process processing module 20 to the carrier 18, and some of the index arms 144c are transferred from the carrier 18 to the process processing module 20. ) Can be used when returning. This can prevent particles generated from the substrate W before the process treatment from being attached to the substrate W after the process treatment while the index robot 144 loads and unloads the substrate W.

The transfer chamber 240 carries the substrate W between the buffer unit 220 and the process chamber 260 and between the process chambers 260. The transfer chamber 240 is provided with a guide rail 242 and a main robot 244. The guide rail 242 is disposed such that its longitudinal direction is parallel to the first direction 12. The main robot 244 is installed on the guide rail 242, which is linearly moved along the first direction 12 on the guide rail 242. The main robot 244 has a base 244a, a body 244b, and a main arm 244c. The base 244a is installed to be movable along the guide rail 242. Body 244b is coupled to base 244a. The body 244b is provided to be movable along the third direction 16 on the base 244a. In addition, the body 244b is provided to be rotatable on the base 244a. The main arm 244c is coupled to the body 244b, which is provided to be movable forward and backward relative to the body 244b. A plurality of main arms 244c are provided to be individually driven. The main arms 244c are stacked to be spaced apart from each other along the third direction 16.

In the process chamber 260, a substrate cleaning apparatus 300 that performs a cleaning process on the substrate W is provided. The substrate cleaning apparatus 300 may have a different structure according to the type of cleaning process to be performed. Alternatively, the substrate cleaning apparatus 300 in each process chamber 260 may have the same structure. Optionally, the process chambers 260 are divided into a plurality of groups so that the substrate cleaning apparatuses 300 in the process chamber 260 belonging to the same group are the same as each other and the substrate cleaning apparatuses in the process chamber 260 belonging to different groups. The structures of 300 may be provided differently from each other. For example, when the process chamber 260 is divided into two groups, one side of the transfer chamber 240 is provided with a first group of process chambers 260, and the other side of the transfer chamber 240 has a second group of processes. Chambers 260 may be provided. Optionally, the first group of process chambers 260 may be provided in the lower layer on both sides of the transfer chamber 240, and the second group of process chambers 260 may be provided in the upper layer. The first group of process chambers 260 and the second group of process chambers 260 may be classified according to types of chemicals used or types of cleaning methods. Alternatively, the first group of process chambers 260 and the second group of process chambers 260 may be provided to sequentially perform the process on one substrate (W).

Below, an example of the substrate cleaning apparatus 300 which wash | cleans the board | substrate W using a process liquid is demonstrated.

2 is a cross-sectional view showing an example of a substrate cleaning apparatus.

Referring to FIG. 2, the substrate cleaning apparatus 300 includes a substrate support member 310, a housing 320, a cleaning liquid supply member 340, a first fluid supply member 350, a second fluid supply member 360, And a dry gas supply member 370. The substrate supporting member 310 supports and rotates the substrate W, and the housing 320 collects the processing liquid scattered from the substrate W. The cleaning liquid supply member 340 supplies the cleaning liquid to the upper surface of the substrate W to clean the substrate W, and the first fluid supply member 350 is heated to a lower surface of the substrate W at a temperature higher than room temperature. One fluid is supplied, and the second fluid supply member 360 supplies the second fluid to the upper surface of the substrate. The dry gas supply member 370 supplies the dry gas to the upper surface of the substrate W. Hereinafter, each configuration will be described in detail.

The substrate support member 310 supports the substrate W and rotates the substrate W during the process. The substrate support member 310 has a spin head 311, a support pin 312, a chuck pin 313, and a support shaft 314. Spinhead 311 has a top surface that is generally provided in a circular shape when viewed from the top. A support shaft 314 rotatable by the motor 315 is fixed to the bottom of the spin head 311.

A plurality of support pins 312 are provided. The support pins 312 are spaced apart at predetermined intervals from the edge of the upper surface of the spin head 311 and protrude upward from the spin head 311. The support pins 312 are arranged to have an annular ring shape as a whole by combination with each other. The support pin 312 supports the bottom edge of the substrate W such that the substrate W is spaced apart from the upper surface of the spin head 311 by a predetermined distance.

A plurality of chuck pins 313 are provided. The chuck pin 313 is disposed farther from the support pin 312 at the center of the spin head 311. The chuck pin 313 is provided to protrude upward from the spin head 311. The chuck pin 313 supports the side of the substrate W so that the substrate W does not deviate laterally from the home position when the spin head 311 is rotated. The chuck pin 313 is provided to enable linear movement between the standby position and the support position along the radial direction of the spin head 311. The standby position is a position far from the center of the spin head 311 relative to the support position. When the substrate W is loaded or unloaded to the spin head 311, the chuck pins 313 are positioned at the standby position, and when the process is performed on the substrate W, the chuck pins 313 are positioned at the support position. In the support position the chuck pin 313 is in contact with the side of the substrate (W).

The housing 320 has a space in which a substrate treatment process is performed, and an upper portion thereof is opened. The housing 320 has an inner recovery container 321, an intermediate recovery container 322, and an external recovery container 323. Each recovery container 321, 322, 323 recovers different treatment liquids from the treatment liquids used in the process. The inner recovery container 321 is provided in an annular ring shape surrounding the spin head 311, and the intermediate recovery container 322 is provided in an annular ring shape surrounding the inner recovery container 321, and the outer recovery container 323 is provided. ) Is provided in an annular ring shape surrounding the intermediate recovery container 322. The inner space 321a of the inner recovery container 321, the space 322a between the internal recovery container 321 and the intermediate recovery container 322, and the space between the intermediate recovery container 322 and the external recovery container 323 ( 323a functions as an inlet through which the processing liquid flows into the inner recovery container 321, the intermediate recovery container 322, and the external recovery container 323, respectively. Each recovery container 321, 322, 323 is connected to a recovery line 324, 325, 326 extending vertically below the bottom surface thereof. Each recovery line 324, 325, 326 discharges the treatment liquid introduced through each recovery container 321, 322, 323. The discharged treatment liquid may be reused through an external treatment liquid regeneration system (not shown).

The lifting unit 330 linearly moves the housing 320 in the vertical direction. As the housing 320 is moved up and down, the relative height of the housing 320 relative to the spin head 311 is changed. The lifting unit 330 has a bracket 331, a moving shaft 332, and a driver 333. The bracket 331 is fixedly installed on the outer wall of the housing 320, and the movement shaft 332 which is moved up and down by the driver 333 is fixedly coupled to the bracket 331. The housing 320 is lowered so that the spin head 311 protrudes above the housing 320 when the substrate W is loaded into the spin head 311 or unloaded from the spin head 311. In addition, when the process is in progress, the height of the housing 320 is adjusted to allow the processing liquid to flow into the predetermined recovery containers 321, 322, and 323 according to the type of processing liquid supplied to the substrate W. FIG. Optionally, the lifting unit 330 may move the spin head 311 in the vertical direction.

The cleaning liquid supply member 340 is disposed at one side of the housing 320. The cleaning solution supply member 340 supplies the cleaning solution to the upper surface of the substrate W to clean the substrate W. The cleaning solution supply member 340 includes a cleaning solution injection nozzle 341, a cleaning solution injection nozzle moving unit 342, and a cleaning solution supply unit 346.

The cleaning liquid jet nozzle 341 ejects the cleaning liquid to the upper surface of the substrate W. As shown in FIG. On the bottom of the cleaning liquid jet nozzle 341, a jet port through which the cleaning liquid is injected is formed.

The cleaning liquid spray nozzle moving unit 342 moves the cleaning liquid spray nozzle 341 in a section between the outer side of the housing 320 and the upper portion of the substrate (W). The cleaning liquid injection nozzle moving part 342 includes a support rod 343, a support shaft 344, and a driver 345.

The support rod 343 is provided in a rod shape and supports the cleaning liquid injection nozzle 341. The support rod 343 is disposed in the horizontal direction, and the cleaning liquid injection nozzle 341 is coupled to one end thereof.

The support shaft 344 is disposed in the vertical direction at the bottom of the support rod 343. The support shaft 344 has an upper end coupled with the other end of the support passage 343 and supports the support rod 343. At the bottom of the support shaft 344 is provided a driver 345. The driver 345 rotates the support shaft 344 about an axis parallel to the longitudinal direction of the support shaft 344.

The cleaning liquid supply unit 346 supplies the cleaning liquid to the cleaning liquid injection nozzle 341. The cleaning solution supply unit 346 includes a cleaning solution storage unit 347, a cleaning solution supply line 348, and a valve 349. The cleaning solution supply line 348 connects the cleaning solution storage unit 347 and the cleaning solution injection nozzle 341. The cleaning liquid stored in the cleaning liquid storage unit 347 is supplied to the cleaning liquid injection nozzle 341 through the cleaning liquid supply line 348. The valve 349 is installed on the cleaning liquid supply line 348 and opens and closes the cleaning liquid supply line 348.

By the structure of the cleaning liquid supply member 340 described above, the cleaning liquid jet nozzle 341 supplies the cleaning liquid to the rotating substrate W. FIG. According to the embodiment, the cleaning liquid injection nozzle 341 may supply the cleaning liquid by swinging the section between the center region and the edge region of the substrate W or the section between one edge region and the other edge region of the substrate W.

The first fluid supply member 350 supplies the first fluid to the bottom surface of the substrate (W). The first fluid supply member 350 includes a first fluid injection nozzle 351, a first fluid supply line 352, a first fluid storage unit 353, a heater 354, and a valve 355.

The first fluid injection nozzle 351 is provided at the center of the upper surface of the spin head 311. An injection hole for injecting the first fluid is formed on the upper surface of the first fluid injection nozzle 351. The first fluid is supplied to the bottom center region of the substrate W to be rotated, and is distributed to the edge region of the substrate W by the rotational force of the substrate W. According to an embodiment, pure water may be used as the first fluid.

The first fluid supply line 352 connects the first fluid injection nozzle 351 and the first fluid storage unit 353. The first fluid stored in the first fluid storage unit 353 is supplied to the first fluid injection nozzle 351 through the first fluid supply line 352. The first fluid supply line 352 is provided with a heater 354 and a flow control valve 355. The heater 354 heats the first fluid supplied through the first fluid supply line 352 to a temperature higher than room temperature. According to the embodiment, the heater 354 heats the first fluid to a temperature of 55 ° C. or higher and 80 ° C. or lower. The flow control valve 355 is installed in the first fluid supply line 352 in the section between the heater 354 and the first fluid storage unit 353, the first fluid supplied through the first fluid supply line 352 Adjust the flow rate.

The dry gas supply member 370 supplies the dry gas to the upper surface of the substrate W. The dry gas supply member 37 includes a dry gas injection nozzle 371, a dry gas storage unit 372, a dry gas supply line 373, and a flow control valve 374.

The bottom surface of the dry gas injection nozzle 371 is formed with an injection port through which dry gas is injected. The dry gas injection nozzle 371 may be moved by an injection nozzle moving unit (not shown) to inject dry gas. The injection nozzle moving unit may be provided in the same structure as the cleaning liquid injection nozzle moving unit 342 described above. By the injection nozzle moving unit, the dry gas injection nozzle 371 may swing the center region and the edge region of the substrate W or the one edge region and the other edge region of the substrate W, and supply dry gas. .

The dry gas supply line 373 connects the dry gas injection nozzle 371 and the dry gas storage unit 372. The dry gas stored in the dry gas storage unit 372 is supplied to the dry gas injection nozzle 371 through the dry gas supply line 372. The dry gas supply line 373 is provided with a flow control valve 374. The flow control valve 374 adjusts the flow rate of the dry gas supplied through the dry gas supply line 373. According to an embodiment, nitrogen gas (N 2 ) may be used as the dry gas.

The second fluid supply member 360 supplies the second fluid to the upper surface of the substrate W.

3 is a cross-sectional view schematically illustrating a second fluid supply member according to an exemplary embodiment of the present invention, and FIG. 4 is a view illustrating a bottom surface of the second fluid injection nozzle of FIG. 3.

2 to 4, the second fluid supply member 360 includes a second fluid jet nozzle 361, a jet nozzle moving part 364, and a second fluid supply part 365.

The second fluid jet nozzle 361 is provided as a block having a rectangular parallelepiped whose length is relatively longer than the height and width. According to an embodiment, the length of the second fluid jet nozzle 361 may be provided to be equal to or greater than the radius of the substrate (W). A buffer space 362 is formed inside the second fluid jet nozzle 361. The buffer space 362 is formed along the longitudinal direction of the second fluid jet nozzle 361. The buffer space 362 is provided as a space where the second fluid supplied to the second fluid jet nozzle 361 temporarily stays before being supplied to the jet port 363.

An injection hole 363 is formed at the bottom of the second fluid injection nozzle 361. The injection hole 363 is connected to the buffer space 362, and receives the second fluid from the buffer space 362 and supplies it to the substrate (W). According to the embodiment, the injection hole 363 is provided with a plurality of injection holes. The injection holes 363 are spaced apart from each other along the longitudinal direction of the second fluid injection nozzle 361. The injection holes 363 are provided in various sizes. According to the embodiment, the size d1 of the injection hole 363a formed in the area adjacent to one end 361b of the second fluid supply nozzle 361 is an area adjacent to the other end 361c of the second fluid supply nozzle 361. It may be provided differently from the size (d2) of the injection hole (363b) formed in. As a result, the flow rate of the second fluid supplied from the region adjacent to one end 361b of the second fluid supply nozzle 361 and the second fluid supplied from the region adjacent to the other end 361c of the second fluid supply nozzle 361. The flow rate of is different. According to another embodiment, the injection holes 363 may be provided to increase in size from one end 361b to the other end 361c of the second fluid supply nozzle 361. As a result, the flow rate of the second fluid supplied from one end 361b of the second fluid supply nozzle 361 to the other end 361c gradually increases. According to the embodiment, the injection holes 363 may be formed by maintaining a predetermined distance (g1 = g2) from the adjacent injection holes. Alternatively, the injection holes 363 may be formed to be smaller than the interval g1 between the injection holes 363a provided with a smaller gap g2 between the injection holes 363b. As a result, the second fluid having a higher flow rate may be supplied in the region in which the injection holes 363b having a larger size are formed than the region of the second fluid injection nozzle 361 in which the injection holes 363a having a relatively small size are formed. .

The fluid supply port 361a connects the second fluid supply line 367 and the buffer space 362. The second fluid supplied through the second fluid supply line 367 is supplied to the buffer space 362 through the fluid supply port 361a. A plurality of fluid supply ports 361a may be formed corresponding to the number of auxiliary supply lines 367b and 367c.

The injection nozzle moving part 364 moves the second fluid injection nozzle 361 in the section between the outer side of the housing 320 and the upper spin head 311. The injection nozzle moving part 364 includes a support rod 364a, a support shaft 364b, and a driver 364c.

The support rod 364a is provided in a rod shape and supports the second fluid injection nozzle 361. The support rod 364a is disposed in the horizontal direction, and the second fluid injection nozzle 361 is coupled to one end.

The support shaft 364b is disposed in the vertical direction at the bottom of the support rod 364a. The support shaft 364b has an upper end coupled with the other end of the support rod 364a and supports the support rod 364a. At the lower end of the support shaft 364b, a driver 364c is provided. The driver 364c rotates the support shaft 364b about an axis parallel to the longitudinal direction of the support shaft 364b. In addition, the driver 364 may raise and lower the support shaft 364b in a vertical direction so that the relative distance between the second fluid injection nozzle 361 and the spin head 311 is changed.

The second fluid supply line 365 connects the second fluid storage part 366 and the second fluid injection nozzle 361. The second fluid stored in the second fluid storage 366 is supplied to the fluid supply port 361a through the second fluid supply line 367. According to an embodiment, the second fluid supply line 367 may include a plurality of supply lines 367a to 367c. One end of the main supply line 367a is connected to the second fluid storage unit 366, and the other end of the main supply line 367a is connected to the plurality of auxiliary supply lines 367b and 367c. The main supply line 367a is provided with a heater 368 and a flow control valve 369a. The heater 368 heats the second fluid to a temperature higher than room temperature. According to the embodiment, the heater 368 heats the second fluid to a temperature of 55 ° C. or higher and 80 ° C. or lower. The flow control valve 369a is installed in the section between the heater 368 and the second fluid storage 366, and controls the flow rate of the second fluid supplied through the main supply line 367a.

The auxiliary supply lines 367b and 367c connect the main supply line 367a and the fluid supply port 361a. According to an embodiment, two auxiliary supply lines 367a and 367b are provided. One end of the first auxiliary supply line 367b is connected to one of the other branches of the main supply line 367a, and the other end is connected to the second fluid injection nozzle 361. One end of the second auxiliary supply line 367c is connected to the other of the other branched ends of the main supply line 367a, and the other end thereof is connected to the second fluid injection nozzle 361. The first and second auxiliary supply lines 367b and 367c are connected to the second fluid injection nozzle 361 at positions spaced apart from each other along the longitudinal direction of the second fluid injection nozzle 361. Each of the auxiliary supply lines 367b and 36c is provided with flow control valves 369b and 369c. Flow control valves 369b and 369c regulate the flow rate of the second fluid supplied through the respective auxiliary supply lines 367b and 367c. As a result, the flow rate of the second fluid supplied to the second fluid injection nozzle 361 may be different depending on the area of the buffer space 362.

According to an embodiment, an organic solvent may be used as the second fluid. By supplying the organic solvent, DHF, ultrapure water, and water remaining between the pattern and the pattern after the cleaning process are replaced with the organic solvent. The substituted organic solvent may have a low surface tension and may be easily dried by a drying gas in a drying step. As the organic solvent, isopropyl alcohol (hereinafter referred to as IPA) may be used.

A method of cleaning a substrate using the substrate cleaning apparatus according to the present invention having the configuration as described above is as follows.

5 is a flowchart illustrating a substrate cleaning method according to an embodiment of the present invention.

Referring to FIG. 5, the substrate cleaning method includes a substrate loading step S10, a substrate cleaning step S20, a substrate drying step S30, and a substrate unloading step S40.

The substrate loading step S10 loads the substrate onto the spin head, and the substrate cleaning step S20 cleans the substrate by supplying a cleaning liquid to the substrate. The substrate drying step (S30) supplies a drying fluid to the cleaned substrate, and the substrate is dried, and the substrate unloading step (S40) unloads the dried substrate from the spin head.

6 is a view briefly illustrating a substrate cleaning step of FIG. 5.

Referring to FIG. 6, the spin head 311 is rotated while the support pin 312 supports the bottom of the substrate W and the chucking pin 313 supports the side of the substrate W. Referring to FIG. The cleaning liquid jet nozzle 341 supplies the cleaning liquid to the upper surface of the rotating substrate W. As shown in FIG. The supplied cleaning liquid diffuses from the center region of the upper surface to the edge region by the rotational force of the substrate W. The cleaning liquid removes organic contaminants remaining on the substrate W, natural oxide films, and metal contaminants contained in the oxide films. According to the embodiment, the cleaning liquid supply nozzle 341 may supply the cleaning liquid while moving between the center region and the edge region of the substrate W or between one edge region and the other edge region of the substrate W.

Referring back to FIG. 5, when the substrate cleaning step S20 is completed, the substrate drying step S30 is performed. Substrate drying step (S30) is a first drying step (S31) for supplying a heating fluid heated to a temperature higher than room temperature and the second drying step (S32) for injecting a dry gas to the substrate proceeds sequentially.

7 is a view briefly showing the first drying step.

Referring to FIG. 7, in the first drying step S31, the first fluid is supplied to the bottom surface of the substrate W, and the second fluid is supplied to the top surface of the substrate W. Referring to FIG. The first fluid is heated by the heater 354 while being supplied to the first fluid injection nozzle 351 through the first fluid supply line 352. The heated first fluid is supplied to the center portion of the bottom surface of the substrate W through the first fluid injection nozzle 351 and is diffused to the edge region by the rotational force of the substrate W. The temperature of the substrate W rises above the set temperature by the supply of the heated first fluid.

The second fluid is heated by the heater 368 while being supplied to the second fluid injection nozzle 361 via the second fluid supply line 367. The heated second fluid is supplied to the upper surface of the substrate W through the second fluid injection nozzle 361. The flow rate of the second fluid supplied to the substrate W is different depending on the region of the substrate W. According to the embodiment, in the second fluid jet nozzle 361, a region 361b having a relatively small radius injection hole is located above the center area of the substrate W, and a region having a relatively large radius spray hole is formed. 361c is positioned above the edge region of the substrate W to supply the second fluid to the substrate W. As shown in FIG. As a result, the second fluid is simultaneously supplied from the center region of the substrate W to the edge region, and the second fluid having a higher flow rate is supplied to the edge region than the center region of the substrate W.

Since the rotating speed of the substrate W varies depending on the area, a difference in heat loss occurs depending on the area of the substrate W. FIG. In particular, since the edge region of the substrate W has a larger linear velocity than that of the center region, heat loss is greater than that of the center region of the substrate W. FIG. This difference in heat loss becomes a factor that prevents the entire surface of the substrate W from being heated uniformly.

 However, according to the present invention, since the flow rate of the second fluid supplied according to the region of the substrate W is adjusted differently, non-uniform heating of the substrate W different from the linear velocity difference can be prevented. Specifically, by supplying a larger amount of the heated second fluid to the edge region having a higher linear velocity than the central region of the substrate W (), it is possible to compensate for heat loss due to the linear velocity difference. Thereby, the whole surface of the board | substrate W can be heated uniformly.

The second fluid supplied to the upper surface of the substrate W heats the substrate W, weakens the adhesive force of the cleaning liquid remaining on the upper surface of the substrate W, and is substituted with the cleaning liquid attached to the upper surface to remain on the upper surface. do. Since the second fluid remaining on the upper surface is maintained at a temperature higher than the normal temperature by heating, evaporation occurs easily. This minimizes the temperature drop of the substrate W due to condensation cooling upon evaporation of the second fluid.

8 is a view briefly showing a second drying step.

Referring to FIG. 8, after the first drying step, the supply of the first fluid and the second fluid to the substrate W is stopped, and the dry gas is supplied to the upper surface of the substrate W. FIG. The dry gas is supplied to the dry gas supply nozzle 371 through the dry gas supply line 373 and sprayed onto the upper surface of the substrate W. The injected dry gas is diffused from the center region of the substrate W to the edge region by the rotation of the substrate W. FIG. The dry gas volatilizes the second fluid remaining between the patterns of the substrate (W) to remove the second fluid from the substrate (W).

Although the substrate W has been described using a wafer used for manufacturing a semiconductor chip as an example, the substrate may be another type of substrate, such as a glass substrate used for a flat panel display panel.

9 is a cross-sectional view schematically illustrating a second fluid supply member according to another exemplary embodiment of the present invention, and FIG. 10 is a view illustrating a bottom surface of the second fluid injection nozzle of FIG. 9.

9 and 10, the injection holes 363 are spaced apart from each other along the longitudinal direction of the second fluid injection nozzle 361. The injection holes 363 are provided with a constant size. According to the embodiment, the area g1 between the injection holes 363b formed in the area adjacent to one end 361b of the second fluid injection nozzle 361 is adjacent to the other end 361c of the second fluid injection nozzle 361. It may be provided wider than the interval g2 between the injection holes 363c formed in (g1> g2). An interval between adjacent injection holes 363 may be gradually narrowed from one end of the second fluid supply nozzle 361 to the other end.

FIG. 11 is a view illustrating a process of supplying a second fluid through the second fluid injection nozzle of FIG. 9.

9 to 11, the interval between the second fluid stems supplied to the substrate W gradually decreases from one end 361b to the other end 361c of the second fluid injection nozzle 361. As a result, a larger amount of the second fluid may be supplied to the edge region than the center region of the substrate W.

12 is a cross-sectional view schematically illustrating a second fluid supply member according to still another embodiment of the present invention, and FIG. 13 is a view illustrating a bottom surface of the second fluid injection nozzle of FIG. 12.

12 and 13, the injection hole 363 is provided as a slit hole parallel to the longitudinal direction of the second fluid injection nozzle 361. According to the embodiment, the slit holes 363 are formed with different widths w1 and w2 in the direction perpendicular to the longitudinal direction depending on the area. The width w1 of the slit hole region 363b adjacent to one side 361b of the second fluid supply nozzle 361 is the width of the slit hole region 363c adjacent to the other side 361c of the second fluid supply nozzle 361. It is formed narrower than (w2). The slit hole 363 may be formed such that its width gradually widens from one end 361b of the second fluid supply nozzle 361 to the other end 361c.

14 is a view illustrating a process of supplying a second fluid through the second fluid injection nozzle of FIG. 12.

Referring to FIG. 14, a second fluid is continuously supplied from one end 361b of the second fluid injection nozzle 361 to the other end 361c. Then, the flow rate of the second fluid supplied gradually increases from one end 361b to the other end 361c of the second fluid injection nozzle 361. As a result, a larger amount of the second fluid can be supplied to the edge region than the center region of the substrate W.

15 is a view showing a second fluid supply member according to another embodiment of the present invention, Figure 16 is a view showing the bottom surface of the second fluid injection nozzle of FIG.

15 and 16, a blocking plate 364 is provided in the buffer spaces 362a and 363b. The blocking plate 364 divides the buffer spaces 362a and 363b into a plurality of spaces along the length direction of the second fluid jet nozzle 361. According to the embodiment, one blocking plate 364 is provided in the buffer spaces 362a and 363b, and the buffer spaces 362a and 363b are divided into a first space 362a and a second space 363b. The second fluid is supplied from the first supply line 367b to the first space 362a, and the second fluid is supplied from the second supply line 367c to the second space 362b. A first flow rate control valve 369b is installed in the first supply line 367b and a second flow rate control valve 369c is installed in the second supply line 367c. The first and second flow control valves 369b and 369c adjust the flow rates of the second fluid supplied through the first and second supply lines 367b and 367c, respectively. The first and second flow control valves 369b and 369c are controlled by the valve control unit 369d. The valve control unit 369d controls the first and second flow control valves 369b and 369c such that the flow rates of the second fluid supplied through the first and second supply lines 367b and 367c are different from each other. According to the embodiment, the valve control unit 369d is configured such that the flow rate of the second fluid supplied through the second supply line 367c is greater than the flow rate of the second fluid supplied through the first supply line 367b. The second flow control valves 369b and 369c are controlled. As a result, a larger amount of fluid is supplied to the second space 362b than the first space 362a, and is larger than the flow rate of the second fluid supplied through the injection hole 363b connected to the first space 362a. The flow rate of the second fluid supplied through the injection hole 363c connected to the second space 362b is greater. As a result, as shown in FIG. 17, a larger amount of the second fluid may be supplied to the edge region than the center region of the substrate W. As shown in FIG.

Alternatively, a plurality of blocking plates may be provided to partition the buffer space into at least three spaces, and the second fluid may be supplied to different spaces from the at least three supply lines. In this case, the valve control unit may control the flow control valves so that the flow rate of the second fluid supplied to each space increases from one end of the second fluid supply nozzle to the other end.

The foregoing detailed description illustrates the present invention. Furthermore, the foregoing is intended to illustrate and describe the preferred embodiments of the invention, and the invention may be used in various other combinations, modifications and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The described embodiments illustrate the best state for implementing the technical idea of the present invention, and various modifications required in the specific application field and use of the present invention are possible. Thus, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed as including other embodiments.

310: substrate support member 320: housing
340: cleaning liquid supply member 350: first fluid supply member
360: second fluid supply member 361: second fluid supply nozzle
363: injection hole 370: dry gas supply member

Claims (2)

A substrate supporting member rotatably supporting a substrate;
A cleaning liquid supply member supplying a cleaning liquid to an upper surface of the substrate;
A first fluid supply member supplying a first fluid heated to a temperature higher than room temperature to a bottom surface of the substrate;
A second fluid supply member for supplying a second fluid to the upper surface of the substrate,
The second fluid supply member is
A second fluid supply nozzle having an injection hole for injecting the second fluid;
A second fluid supply line connected to the second fluid supply nozzle and supplying the second fluid;
Installed in the second fluid supply line, includes a heater for heating the second fluid to a temperature higher than room temperature,
And a flow rate of the second fluid injected from the injection hole is different along a length direction of the second fluid supply nozzle. The method of claim 1,
The injection hole
Is provided as a plurality of injection holes spaced apart from each other along the longitudinal direction of the second fluid supply nozzle,
Wherein the spacing between the injection holes formed in the area adjacent to one end of the second fluid supply nozzle is different from the spacing between the injection holes formed in the area adjacent to the other end of the second fluid supply nozzle.
KR1020100077531A 2010-08-11 2010-08-11 Apparatus and method for cleaning substrate KR20120015208A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140017315A (en) * 2012-07-31 2014-02-11 세메스 주식회사 Apparatus fdr drying substrates
KR20140017311A (en) * 2012-07-31 2014-02-11 세메스 주식회사 Apparatus and method fdr cleaning substrates
KR20140017753A (en) * 2012-07-31 2014-02-12 세메스 주식회사 Apparatus and method fdr cleaning substrates
KR20140144799A (en) * 2013-06-11 2014-12-22 세메스 주식회사 Apparatus for treating substrate
KR20140144800A (en) * 2013-06-11 2014-12-22 세메스 주식회사 Apparatus for treating substrate
KR101499920B1 (en) * 2014-04-22 2015-03-10 주식회사 케이씨텍 Distribution part and cleaning apparatus for substrate having the same
KR20160136066A (en) * 2015-05-19 2016-11-29 주식회사 케이씨텍 Apparatus to clean substrate to clean substrate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140017315A (en) * 2012-07-31 2014-02-11 세메스 주식회사 Apparatus fdr drying substrates
KR20140017311A (en) * 2012-07-31 2014-02-11 세메스 주식회사 Apparatus and method fdr cleaning substrates
KR20140017753A (en) * 2012-07-31 2014-02-12 세메스 주식회사 Apparatus and method fdr cleaning substrates
KR20140144799A (en) * 2013-06-11 2014-12-22 세메스 주식회사 Apparatus for treating substrate
KR20140144800A (en) * 2013-06-11 2014-12-22 세메스 주식회사 Apparatus for treating substrate
KR101499920B1 (en) * 2014-04-22 2015-03-10 주식회사 케이씨텍 Distribution part and cleaning apparatus for substrate having the same
KR20160136066A (en) * 2015-05-19 2016-11-29 주식회사 케이씨텍 Apparatus to clean substrate to clean substrate

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