KR101499920B1 - Distribution part and cleaning apparatus for substrate having the same - Google Patents

Abstract

Provided are a spraying unit and a substrate cleaning apparatus including the same, capable of preventing a pattern leaning phenomenon in the substrate cleaning apparatus to clean and dry a semiconductor substrate on which a pattern is formed. The spraying unit to supply a cleaning agent and IPA to the substrate in the cleaning apparatus of the semiconductor substrate includes an IPA spray head which supplies the IPA to the substrate and a second fluid spray head which supplies a fluid which is heated with a temperature which is higher than the IPA when the IPA is supplied and supplies the fluid to the same location as the IPA spray head.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate cleaning apparatus,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a cleaning apparatus for a semiconductor substrate, and more particularly, to a jetting unit having an IPA jetting head for providing IPA for cleaning and drying a substrate and a substrate cleaning apparatus having the jetting unit.

Generally, in semiconductor manufacturing processes, deposition, etching, photoresist coating, development, removal of impurities such as asher and particles are repeated several times As a result of this process, impurities remain in the semiconductor substrate which have not been completely removed by the etching or impurity removal process. As the miniaturization of semiconductor devices progresses, the importance of removing impurities such as metal impurities, organic contaminants, and natural oxide films including fine particles is also increasing in terms of yield and reliability. Since these impurities are important factors that influence the performance and yield of the semiconductor device, it is necessary to carry out a cleaning process before proceeding each process for manufacturing the semiconductor device.

As described above, the cleaning process of the substrate for manufacturing the semiconductor device is carried out in order to remove various objects such as fine particles remaining on the surface of the substrate, surface impurities such as metal impurities, organic contaminants, and natural oxide films. Typically, the cleaning process is a chemical cleaning process using a solution of SC1 (Standard Cleaning 1, APM-NH4OH, H2O2 and H2O mixed organic materials in a ratio of 1: 1: 5 to 1: 4: 20) and DHF (Diluted HF) . The cleaning process occupies about 1/4 to 1/3 of the total process for manufacturing semiconductor devices, which means that various cleaning processes suitable for each process as well as the number of cleaning processes are required.

Generally, a wet cleaning apparatus for a semiconductor substrate is classified into a batch type in which a plurality of substrates are immersed in a cleaning bath filled with a chemical solution and a batch type in which a single substrate is horizontally arranged and rotated It is divided into single type.

On the other hand, a single-wafer type cleaning apparatus is a system in which a cleaning agent is sprayed on a surface of a substrate rotated at a high speed to clean the surface of the substrate by centrifugal force, and the substrate is cleaned with a drying liquid such as isopropyl alcohol (IPA) And dried. Also, in the single-wafer type cleaning apparatus, the cleaning process is an RCA process, that is, SC1, SC2 (Standard Cleaning 2: a cleaning agent mixed with HPM-HCl, H2O2 and H2O), Piranha (SPM, Sulfuric Peroxide Mixture) (Eg, 1500 to 2500 RPM), and the drying process is generally performed by using a high-RPM (eg, 1500 to 2500 RPM) solution, removing the thin film from the surface of the substrate using a chemical solution, rinsing the substrate with DI water, (For example, N ₂ gas) is supplied to the surface of the substrate while simultaneously spinning the substrate while rotating the substrate. In recent years, an IPA / N ₂ gas is injected simultaneously with the spin method The Rotagoni method is a method in which the IPA is supplied in a liquid or gaseous state while the N ₂ gas is sprayed to form a Marangoni effect Surface tension Lowering by using the effect of drying) to thereby remove the moisture in the substrate.

On the other hand, in the case of cleaning and drying the substrate having the pattern formed on the substrate surface in the conventional single wafer type cleaning apparatus, the pattern leaning occurs due to the surface tension of the IPA filled in the groove of the pattern, . This phenomenon of pattern collapse can be further exacerbated as the pattern becomes finer.

Embodiments of the present invention provide a substrate cleaning apparatus capable of enhancing a drying effect and preventing a pattern collapse phenomenon.

The jetting portion of the substrate cleaning apparatus according to the above-described embodiments of the present invention provides an IPA jetting head that provides IPA to the substrate and a fluid heated to a temperature higher than that of the IPA while providing the IPA, And a second fluid ejection head for providing the fluid at the same position as the head.

According to one aspect of the present invention, the IPA jetting head may be formed of a plurality of holes or a plurality of nozzles, and the second fluid jetting head may be formed of a plurality of holes or a plurality of nozzles surrounding the respective IPA jetting heads. The head portion is disposed from the center to the edge of the substrate, and the distance between the head portions can be densely arranged from the center to the edge of the substrate. In addition, the head portion may be disposed so that the distance from the straight line along the diameter of the substrate to the head gradually increases toward the edge from the center of the substrate. The IPA injection head and the second fluid ejection head may be concentrically formed.

According to one aspect, the IPA jetting head is formed in the form of an air knife, and the second fluid jetting head may be formed in the form of an air knife for providing the fluid in parallel at a position adjacent to the IPA jetting head.

According to one aspect, the second fluid ejection head can provide fluid to either heat the entire surface of the substrate, or partially heat it. In addition, the second fluid ejection head may provide N ₂ gas heated to a predetermined temperature or more, or a gas heated to a predetermined temperature or more, or a DIW in a mist state. For example, the second fluid ejection head may heat the surface of the substrate to 50 to 120 캜.

According to one aspect of the present invention, a sensor unit may be provided at one side of the head unit to measure the temperature of the fluid provided by the substrate or the head unit.

The substrate cleaning apparatus according to the above-described embodiments of the present invention includes a spin chuck for holding and rotating a substrate, a chamber for accommodating the spin chuck and recovering a cleaning agent scattering from the rotating substrate, And a jetting unit including a plurality of heads arranged in a curved shape which are provided along the rotation direction of the substrate and provided with a cleaning agent and IPA on the substrate, and the jetting unit includes an IPA jetting head And a second fluid ejection head providing a fluid heated to a temperature higher than the IPA while providing the IPA and providing the fluid at the same position as the IPA ejection head.

According to one aspect of the present invention, the IPA jetting head may be formed of a plurality of holes or a plurality of nozzles, and the second fluid jetting head may be formed of a plurality of holes or a plurality of nozzles surrounding the respective IPA jetting heads. The head portion is arranged from the center to the edge of the substrate, and the gap between the head portions is densely arranged from the center to the edge of the substrate, and the head portion moves from the center to the edge of the substrate, The distance from the straight line along the diameter to the head portion can be gradually increased. The IPA injection head and the second fluid ejection head may be concentrically formed.

According to one aspect of the present invention, the second fluid ejection head may provide N ₂ gas heated to a predetermined temperature or more, or gas or mist state DIW heated to a predetermined temperature or higher. For example, the second fluid ejection head may heat the surface of the substrate to 50 to 120 캜.

According to another aspect of the present invention, there is provided a substrate cleaning apparatus including a spin chuck for supporting and rotating a substrate, a chamber for receiving the spin chuck and for collecting a cleaning agent scattering from the rotating substrate, And a plurality of heads arranged in a curved shape along the rotation direction of the substrate to provide a cleaning agent and an IPA to the substrate, wherein the jetting unit has an air knife shape, and the IPA Wherein the IPA dispense head and head are formed in the form of an air knife that provides the fluid in parallel at a location adjacent the IPA dispense head to provide a fluid heated to a temperature higher than the IPA while providing the IPA And a second fluid ejection head for providing the fluid at the same position as the IPA ejection head.

According to one aspect of the present invention, the second fluid ejection head may provide N ₂ gas heated to a predetermined temperature or more, or gas or mist state DIW heated to a predetermined temperature or higher. For example, the second fluid ejection head may heat the surface of the substrate to 50 to 120 캜.

As described above, according to the embodiments of the present invention, it is possible to prevent the occurrence of the pattern collapse due to the surface tension of the IPA during the drying process by heating and maintaining the temperature of the IPA and the substrate at a predetermined temperature or higher .

In addition, by heating and maintaining the surface temperature of the substrate up to about 100 DEG C, the IPA having lowered temperature during the ejection can be reheated to a temperature higher than a predetermined temperature when reaching the substrate, thereby effectively preventing the pattern falling of the substrate .

1 is a schematic view of a substrate cleaning apparatus according to an embodiment of the present invention.
2 is a plan view for explaining a jetting portion of a substrate cleaning apparatus according to an embodiment of the present invention.
3 is a cross-sectional view showing a recessed portion of the ejection portion of FIG.
4 is a plan view for explaining a jetting unit according to another embodiment of the present invention.
5 is a cross-sectional view showing a recessed portion of the ejection portion of FIG.

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. It should be noted that, in adding reference numerals to the constituent elements of the drawings, the same constituent elements are denoted by the same reference symbols as possible even if they are shown in different drawings. In the following description of the embodiments of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the difference that the embodiments of the present invention are not conclusive.

In describing the components of the embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the constituent elements from other constituent elements, and the terms do not limit the nature, order or order of the constituent elements. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; may be "connected,""coupled," or "connected. &Quot;

Hereinafter, a substrate cleaning apparatus 10 according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 5. FIG. 1 is a plan view of a substrate cleaning apparatus 10 according to an embodiment of the present invention. 2 is a plan view for explaining a jetting section 13 in the substrate cleaning apparatus 10 of FIG. 1, and FIG. 3 is a main section view showing a part of the jetting section 13 of FIG. 4 is a plan view for explaining the jetting unit 13 according to another embodiment of the present invention, and FIG. 5 is a sectional view of a main part showing a part of the jetting unit 13 in FIG.

Referring to the drawings, a substrate cleaning apparatus 10 includes a single substrate 1 while horizontally receiving and supporting a single substrate 1, while supplying a cleaning agent to a surface while rotating the substrate 1 at a predetermined speed, Is a single spin type cleaning apparatus that horizontally receives and rotates at a predetermined speed and performs cleaning and drying of the substrate 1 by providing a cleaning agent and a drying gas on the rotating substrate 1. The substrate cleaning apparatus 10 is provided with a spin chuck 12 for holding and rotating the substrate 1 and a head 131 for providing a cleaning agent to the substrate 1 to be rotated.

In this embodiment, the substrate 1 may be a silicon wafer for manufacturing a semiconductor device. However, the substrate 1 of the present invention is not limited thereto, and may be a transparent substrate including a glass for a flat panel display device (FPD) such as a liquid crystal display (LCD) or a plasma display panel have. Further, the shape and size of the substrate 1 are not limited to those shown in the drawings, and may have substantially various shapes and sizes such as circular and square.

The spin chuck 12 is provided with a plurality of chuck pins 121 so that the substrate 1 can be placed thereon. For example, the chuck pins 121 may be disposed at regular intervals along the periphery of the substrate 1. [ However, the present invention is not limited to the drawings, and the number and shape of the chuck pins 121 and the positions of the chuck pins 121 may be changed substantially.

Further, the spin chuck 12 is formed so as to rotate the substrate 1 at a predetermined speed. A drive shaft 125 for rotating the spin chuck 12 is coupled to a lower portion of the spin chuck 12. The driving shaft 125 is provided with a driving unit (not shown) including a motor for providing a rotational force. Further, the driving shaft 125 can be vertically driven in the chamber 11 while the cleaning process is performed.

The chamber 11 is formed to surround the spin chuck 12 and is formed into an annular ring shape for sucking and treating a fluid such as a cleaning agent scattered in the substrate 1 while the cleaning process is performed. In addition, the chamber 11 is provided with a plurality of recovery cups along the side wall in the chamber 11 so that different cleaning agents can be separated and sucked, and the recovery cups 111 have different inlet heights May be formed in multiple stages. The spin chuck 12 moves up and down to a height corresponding to the inlet of the recovery cup 111 to adjust the height of the spin chuck 12 and the substrate 1.

The cleaning agent on the surface of the substrate 1 is scattered to the periphery by the centrifugal force generated as the spin chuck 12 rotates and the cleaning agent scattered flows into the recovery cup 111 provided at the corresponding position. Then, the cleaning agent recovered in the recovery cup 111 is recovered through different routes, and the different kinds of cleaning agents are reused. Further, the cleaning agent introduced into the recovery cup 111 is discharged to the outside of the chamber 11 through a plurality of discharge portions (not shown). For example, in the present embodiment, three recovery cups 111 are provided. However, the present invention is not limited thereto, and the number and shape of the recovery cups 111 may be substantially varied.

The jetting section 13 is provided on the substrate 1 to provide a cleaning agent to the substrate 1 and provides an IPA for drying the substrate 1. [ The jetting section 13 is configured to include a head portion 131 for providing a cleaning agent and IPA, and a first supply source 135 for providing a cleaning agent and IPA. Here, the head portion 131 may be provided with a plurality of nozzles for providing a cleaning agent.

The first source 135 may include an IPA source 351 providing an IPA and a fluid source 352 providing a second fluid.

In the present embodiment, the term 'detergent' refers to a liquid or gaseous substance for removing an object from the substrate 1. Further, as the detergent, a plurality of detergents may be used depending on the kind to be treated. For example, an organic solvent, N ₂ gas may be used to remove the resist. In order to remove SiO, water, hydrogen fluoride HF, IPA, N ₂ gas and the like can be used. In addition, hydrochloric acid HCl, ozone O ₃ , and N ₂ gas may be used to remove the metal. In order to remove organic substances other than the resist, O ₃ and N ₂ gases can be used. In addition, to remove other particles, ammonia water APM, N ₂ gas, N ₂ gas or argon Ar may be used. Water, IPA, and N ₂ gas can be used to remove ions of fluorine F, chlorine Cl, and ammonia NH ₄ .

However, in the present embodiment, the drying process for drying the substrate 1 will be mainly described, and a detailed description of the cleaning process will be omitted.

The head portion 131 provides IPA (Isopropyl Alcohol) and N ₂ gas for drying the substrate 1 and provides an IPA jetting head 311 for providing IPA and a second fluid containing N ₂ gas And a second fluid ejection head (312). In addition, the head portion 131 may further include a DIW nozzle (not shown) for providing a DIW for rinsing the substrate 1.

Here, the IPA jetting head 311 provides the IPA on the surface of the substrate 1 to lower the surface tension of the moisture on the surface of the substrate 1 to dry the substrate 1. And the second fluid ejection head 312 heats the substrate 1 by providing a heated fluid to the substrate 1 at a predetermined temperature.

On the other hand, IPA is heated and supplied at a temperature of 70 캜 when supplied from the first supply source 135 to the head portion 131. Since the temperature of the surface of the substrate 1 is lower than about 70 ° C and the temperature is lowered while being sprayed by the IPA jetting head 311, the temperature of the IPA is lowered to about 30 ° C when it reaches the surface of the substrate 1 . However, the lower the temperature of the IPA, the higher the surface tension of the IPA, which in turn increases the Maragoni effect. When the surface tension of the IPA is increased, the surface tension of the surface of the substrate 1 with respect to the pattern formed on the surface of the substrate 1 increases, and a pattern leaning phenomenon may occur.

In order to prevent such a pattern collapse phenomenon, means for raising the temperature of IPA is provided. In this embodiment, a second fluid ejection head 312 is provided for raising the temperature of the substrate 1 by supplying N ₂ gas of high temperature to the surface of the substrate 1.

Here, the second fluid ejection head 312 may be provided with a DIW in a gas or mist state. Hereinafter, the N ₂ gas or DIW provided by the second fluid ejection head 312 will be collectively referred to as 'fluid'. Here, the fluid provided by the second fluid ejection head 312 may include a gas and a mist state.

The second fluid ejection head 312 heats the substrate 1 to a temperature above a certain temperature by providing a second fluid heated to a predetermined temperature on the surface of the substrate 1 during the drying process of the substrate 1 . As the temperature of the substrate 1 is raised, the temperature of the IPA is raised to lower the surface tension of the IPA.

Specifically, the second fluid ejection head 312 provides the substrate 1 with a high temperature N ₂ gas or DIW at a predetermined temperature or more to maintain the temperature of the substrate 1 at a predetermined temperature or higher. For example, the second fluid ejection head 312 may heat the substrate 1 surface to 50 ° C to 120 ° C. In addition, the second fluid ejection head 312 can heat the surface of the substrate 1 to 70 [deg.] C to 100 [deg.] C. Here, the second fluid ejection head 312 provides pure water in a heated mist or gaseous state, or provides hot N ₂ gas heated to a certain temperature or higher.

The second fluid ejection head 312 may be provided to heat the entire substrate 1 or to locally heat the substrate 1 only for a part of the area where IPA is provided.

Specifically, the second fluid ejection head 312 provides the substrate 1 with a high temperature N ₂ gas or DIW at a predetermined temperature or more to maintain the temperature of the substrate 1 at a predetermined temperature or higher. The second fluid ejection head 312 is provided with a fluid heated to a predetermined temperature or more to the substrate 1 while IPA is supplied to the substrate 1 so that the surface of the substrate 1 by the condensation cooling resulting from the evaporation of the IPA solution Thereby preventing a sudden drop in temperature.

For example, the second fluid ejection head 312 may heat the substrate 1 surface to 50 ° C to 120 ° C. In addition, the second fluid ejection head 312 can heat the surface of the substrate 1 to 70 [deg.] C to 100 [deg.] C. Here, the second fluid ejection head 312 provides pure water in a heated mist or gaseous state, or provides hot N ₂ gas heated to a certain temperature or higher.

The second fluid ejection head 312 may be provided to heat the entire substrate 1 or to locally heat the substrate 1 only for a part of the area where IPA is provided.

The IPA jetting head 311 and the second fluid jetting head 312 may be formed of a plurality of holes or nozzles, respectively, and may be formed concentrically. That is, the IPA jetting head 311 may be formed in a predetermined hole or nozzle shape, and the second fluid jetting head 312 may be formed around the IPA jetting head 311.

The head portion 131 may be disposed from the center to the edge of the substrate 1 and may be disposed along a curve curved at a predetermined curvature along the rotational direction of the substrate 1. [ Here, the head part 131 is formed so as to increase the drying effect of the substrate 1 by the IPA and the fluid to be sprayed, and to increase the temperature of the substrate 1 uniformly, with respect to a predetermined straight line in the radial direction of the substrate 1, The distance from the head portion 131 disposed at the center of the substrate 1 to the head portion 131 disposed at the edge of the substrate 1 may be further increased. Since the area occupied by the head portion 131 disposed at the edge portion of the substrate 1 is wider than the center of the substrate 1, the head portion 131 is positioned closer to the edge of the substrate 1, The spacing between the portions 131 can be made compact.

The head part 131 is provided on the head part 131 so that the centrifugal force applied by the rotation of the substrate 1 and the jetting force of the IPA and the fluid provided by the head part 131 simultaneously act to remove moisture from the surface of the substrate 1, (131) is determined. Specifically, the direction of the centrifugal force acting on the substrate 1 is constant in the radial direction of the substrate 1, and when the force acting by the IPA injected from the head part 131 coincides with the direction of the centrifugal force The drying effect of the substrate 1 can be maximized. In this embodiment, the direction of the IPA provided by the head portion 131 coincides with the direction of the centrifugal force and the direction of the IPA injected from each of the ejection heads 311 and 312 coincides with the direction of the head portion 131 Is determined.

According to the present embodiment, by arranging the head portion 131 in a curved shape, the drying effect can be improved by the IPA sprayed from the IPA jetting head 311.

The second fluid ejection head 312 is also provided with a plurality of ejection heads 312 so that the temperature difference between the region where the fluid is directly injected to the substrate 1 and the other region is not generated, The temperature can be kept constant. Alternatively, the second fluid ejection head 312 provides fluid only for the area where the IPA is provided, so that the substrate 1 can be effectively heated.

In addition, a sensor unit 137 may be provided on one side of the head unit 131 to measure the amount and the temperature at which the IPA is provided. However, the position of the sensor portion 137 is not limited by the drawings, but may be provided at substantially various positions where the temperature of the second fluid and / or the IPA can be measured.

Or the IPA jetting head 311 may have an air knife shape so that moisture can be effectively pushed out from the surface of the substrate 1. [ The second fluid ejection head 312 may also have an air knife shape parallel to the IPA ejection head 311. 4 and 5, the position of the ejection port is formed so that the IPA ejecting head 311 ejects the IPA in a substantially opposite direction with respect to the direction in which the substrate 1 is rotated. Further, The IPA is formed so as to be injected at a predetermined angle slope with respect to the surface of the substrate 1. The IPA sprayed from the IPA spraying head 311 can push out the residual moisture from the surface of the substrate 1, so that the drying effect of the substrate 1 can be enhanced.

In FIG. 4, reference numeral 313 denotes a second fluid ejection head 313 for ejecting the second fluid. In this case, the second fluid ejection heads 312, 313 may be the same ejection head or two separate ejection heads. 4, reference numeral 353 denotes a supply source 353 for supplying fluid to the second fluid ejection head 313.

According to these embodiments, by heating the surface temperature of the substrate 1 to about 100 캜 while IPA is being provided in the second fluid ejection head 312, the IPA is reheated while the IPA is being injected, Is maintained at a temperature higher than a certain temperature and the surface tension is lowered, thereby preventing the occurrence of the pattern collapse due to the surface tension of the IPA during the drying process. In addition, since the surface of the substrate 1 is heated during the drying process and the temperature is maintained at a predetermined temperature or more, generation of particles due to water spots and drying failure on the surface of the substrate 1 can be prevented. In addition, since the entire substrate 1 is maintained at a constant temperature without abrupt temperature drop, the drying time by the IPA solution is reduced, and the consumption of the IPA solution is reduced.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The present invention is not limited to the above-described embodiments, and various modifications and changes may be made thereto by those skilled in the art to which the present invention belongs. Therefore, the spirit of the present invention should not be construed as being limited to the above-described embodiments, and all of the equivalents or equivalents of the claims, as well as the following claims, are included in the scope of the present invention.

1: substrate
10: Substrate cleaning apparatus
11: chamber
111: Recovery Cup
12: Spin chuck
121:
125: drive shaft
13:
131:
311: IPA injection head
312: second fluid ejection head
135: First source

Claims (17)

An IPA dispense head providing IPA to the substrate; And
A second fluid ejection head providing a fluid heated to a temperature higher than the IPA while providing the IPA, wherein the IPA ejection head provides the fluid at a location at which the IPA is provided by the substrate;
A head unit configured to include:
Wherein the head portion is arranged from the center to the edge of the substrate and the distance between the head portions becomes closer toward the edge from the center of the substrate and the distance from the straight line along the diameter of the substrate to the head portion gradually increases Wherein the substrate cleaning apparatus comprises:
The method according to claim 1,
Wherein the IPA injection head is constituted by a plurality of holes or a plurality of nozzles and the second fluid ejection head comprises a plurality of holes or a plurality of nozzles surrounding the plurality of nozzles of the IPA ejection head, Dispensing section of the cleaning device.
delete delete 3. The method of claim 2,
Wherein the IPA ejection head and the second fluid ejection head are concentrically formed.
The method according to claim 1,
Wherein the IPA injection head is formed of a nozzle in the form of an air knife,
Wherein the second fluid ejection head is formed of a nozzle in the form of an air knife that provides the fluid in parallel at a location adjacent to the IPA ejection head.
The method according to claim 1,
Wherein the second fluid ejection head provides fluid to heat or partially heat the surface of the substrate in its entirety.
8. The method of claim 7,
Wherein the second fluid ejection head provides a DIW in a N ₂ gas, gas or mist state heated to a temperature higher than the IPA.
9. The method of claim 8,
Wherein the second fluid ejection head comprises:
And the temperature of the surface of the substrate is heated to 50 ° C to 120 ° C.
The method according to claim 1,
And a sensor unit for measuring the temperature of the fluid provided by the substrate or the head unit is provided at one side of the head unit.
A spin chuck supporting and rotating the substrate;
A chamber for receiving the spin chuck and for collecting a cleaning agent scattering on a rotating substrate; And
And a plurality of heads provided on the spin chuck to provide cleaning agents and IPA to the substrate, wherein the head portions are arranged from the center to the edge of the substrate and are curved along the rotation direction of the substrate, A jetting portion arranged so that a gap between the head portions becomes closer to the edge from the center of the substrate, and a distance from a straight line along the diameter of the substrate to the head gradually increases;
Lt; / RTI >
Wherein:
An IPA dispense head providing IPA to the substrate; And
A second fluid ejection head providing a fluid heated to a temperature higher than the IPA while providing the IPA, wherein the IPA ejection head provides the fluid at a location at which the IPA is provided by the substrate;
And a substrate cleaning apparatus.
12. The method of claim 11,
Wherein the IPA injection head is constituted by a plurality of holes or a plurality of nozzles and the second fluid ejection head comprises a plurality of holes or a plurality of nozzles surrounding the plurality of nozzles of the IPA ejection head, Cleaning device.
delete 13. The method of claim 12,
Wherein the IPA ejection head and the second fluid ejection head are formed concentrically.
12. The method of claim 11,
Wherein the second fluid ejection head provides a gas or mist state DIW heated to a predetermined temperature or higher or a N ₂ gas heated to a predetermined temperature or higher.
16. The method of claim 15,
And the second fluid ejection head heats the surface of the substrate to 50 to 120 캜.
A spin chuck supporting and rotating the substrate;
A chamber for receiving the spin chuck and for collecting a cleaning agent scattering on a rotating substrate; And
And a plurality of heads provided on the spin chuck to provide cleaning agents and IPA to the substrate, wherein the head portions are arranged from the center to the edge of the substrate and are curved along the rotation direction of the substrate, A jetting portion arranged so that a gap between the head portions becomes closer to the edge from the center of the substrate, and a distance from a straight line along the diameter of the substrate to the head gradually increases;
Lt; / RTI >
Wherein:
An IPA jet head having an air knife type nozzle and providing IPA to the substrate; And
The nozzle having an air knife type nozzle for providing a fluid in parallel with the IPA jet head and providing a fluid heated to a temperature higher than the IPA while providing the IPA, A second fluid ejection head for providing said fluid in a position to provide said IPA;
And a substrate cleaning apparatus.

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