KR20120014420A - Light emitting device package and method for manufacutring body of light emitting device pacakge - Google Patents
Light emitting device package and method for manufacutring body of light emitting device pacakge Download PDFInfo
- Publication number
- KR20120014420A KR20120014420A KR1020100076469A KR20100076469A KR20120014420A KR 20120014420 A KR20120014420 A KR 20120014420A KR 1020100076469 A KR1020100076469 A KR 1020100076469A KR 20100076469 A KR20100076469 A KR 20100076469A KR 20120014420 A KR20120014420 A KR 20120014420A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- emitting device
- metal structure
- device package
- light
- Prior art date
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Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
A light emitting device package according to an embodiment includes a body including a metal structure and an insulating material, the body including an electrode layer; And a light emitting device positioned on the body and electrically connected to the electrode layer. The metal structure has a net shape, and the insulating material fills in the net of the metal structure.
Description
Embodiments relate to a light emitting device package and a method of manufacturing a body for a light emitting device package.
Light emitting diodes (LEDs) are a type of semiconductor device that converts electrical energy into light. The light emitting diode has advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps.
Accordingly, many researches have been conducted to replace the existing light source with light emitting diodes, and the use of light emitting diodes as a light source for lighting devices such as various lamps, liquid crystal displays, electronic signs, and street lamps that are used indoors and outdoors is increasing. to be.
The embodiment provides a light emitting device package and a method of manufacturing a body for a light emitting device package capable of improving heat dissipation characteristics.
A light emitting device package according to an embodiment includes a body including a metal structure and an insulating material, the body including an electrode layer; And a light emitting device positioned on the body and electrically connected to the electrode layer. The metal structure has a net shape, and the insulating material fills in the net of the metal structure.
Method of manufacturing a body for a light emitting device package according to an embodiment, comprising the steps of placing a metal structure having a hollow in the frame; And filling the mold with an insulating material.
The light emitting device package according to the embodiment may include a body having excellent heat dissipation characteristics, thereby minimizing temperature increase during use.
The method of manufacturing a light emitting device package body according to the embodiment may produce a body having excellent heat dissipation characteristics by a simple method.
1 is a cross-sectional view of a light emitting device package according to a first embodiment.
2 is a perspective view of the light emitting device package according to the first embodiment, except for the lens.
3A to 3F are cross-sectional views illustrating processes of a method of manufacturing a light emitting device package according to the first embodiment.
4 is a cross-sectional view of a light emitting device package according to a second embodiment.
5 is a cross-sectional view of a light emitting device package according to a third embodiment.
6 is a cross-sectional view of a light emitting device package according to a fourth embodiment.
7 is a view illustrating a backlight unit including a light emitting device package according to an embodiment.
8 is a view illustrating a lighting unit including a light emitting device package according to an embodiment.
In the description of embodiments, each layer, region, pattern, or structure may be “on” or “under” the substrate, each layer, region, pad, or pattern. Substrate formed in ”includes all formed directly or through another layer. Criteria for the top / bottom or bottom / bottom of each layer will be described with reference to the drawings.
The thickness or the size of each layer (film), region, pattern or structure in the drawings may be modified for clarity and convenience of explanation, and thus does not entirely reflect the actual size.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 is a cross-sectional view of a light emitting device package according to a first embodiment, and FIG. 2 is a perspective view of the light emitting device package according to the first embodiment, except for a lens.
1 and 2, the light
This will be described in more detail as follows.
The
Accordingly, the
The
In the embodiment, since the
At this time, since the
In addition, a
In FIG. 2, a portion of the
The
In this embodiment, the
The first and
The
In an embodiment, two electrode layers (not shown) of the
The
The
The light emitting
Hereinafter, a method of manufacturing a light emitting device package body and a method of manufacturing the light emitting device package using the same will be described in detail with reference to FIGS. 3A to 3F. For the sake of clarity and simplicity, the foregoing description will be omitted.
3A to 3F are cross-sectional views illustrating processes of a method of manufacturing a light emitting device package according to the first embodiment.
First, as shown in FIG. 3A, the first and
Subsequently, as shown in FIG. 3B, the
Subsequently, as shown in FIG. 3C, a
Subsequently, as shown in FIG. 3D, the
In the present exemplary embodiment, the
Subsequently, as shown in FIG. 3F, the
In the present embodiment, the
Hereinafter, a light emitting device package and a method of manufacturing the same according to the second to fourth embodiments will be described with reference to FIGS. 4 to 6. For the sake of clarity and simplicity, the descriptions of the light emitting device package and the manufacturing method thereof according to the first embodiment will not be described in detail, and different parts will be described in detail.
4 is a cross-sectional view of a light emitting device package according to a second embodiment.
Referring to FIG. 4, the light emitting
As a result, the heat generated by the
In addition, the first and second electrode layers 41 and 42 may be positioned at portions of the insulating
The method of manufacturing the
5 is a cross-sectional view of a light emitting device package according to a third embodiment.
Referring to FIG. 5, in the light emitting
Sides of the
In the present exemplary embodiment, the
In the drawing, the first and second electrode layers 41 and 42 are positioned on the upper surface of the
The
6 is a cross-sectional view of a light emitting device package according to a fourth embodiment.
Referring to FIG. 6, in the light emitting
In this case, since the
As described above, in the present exemplary embodiment, the
In the present embodiment, a plurality of second portions B made of only the insulating
The light emitting device package according to the above embodiments may function as a lighting system such as a backlight unit, an indicator device, a lamp, and a street lamp. This will be described with reference to FIGS. 7 and 8.
7 is a view illustrating a backlight unit including a light emitting device package according to an embodiment. However, the
Referring to FIG. 7, the
The
The
As shown, the
However, the
The
The
The
The
The
8 is a view illustrating a lighting unit including a light emitting device package according to an embodiment. However, the
Referring to FIG. 8, the
The
The
The
In addition, the
At least one light emitting
Each of the light emitting device packages 600 may include at least one light emitting diode (LED). The light emitting device may include a colored light emitting device for emitting colored light of red, green, blue or white color, and a UV light emitting device for emitting ultraviolet light (UV, UltraViolet).
The
The
In the lighting system as described above, at least one of a light guide member, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet may be disposed on a propagation path of light emitted from the light emitting module to obtain a desired optical effect.
As described above, the lighting system according to the embodiment includes a light emitting device package having improved heat dissipation characteristics, thereby improving reliability.
The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. In addition, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.
In addition, the above description has been made with reference to the embodiments, which are merely examples and are not intended to limit the invention. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.
Claims (11)
An electrode layer on the body;
A light emitting device electrically connected to the electrode layer on the body
Including,
And the metal structure has a net shape, and the insulating material fills in the net of the metal structure.
The body,
A first portion in which the metal structure and the insulating material are located together; And
And a second portion in which only the insulating material is located.
The light emitting device package, wherein the electrode layer is located on the first portion.
The electrode layer comprises a first electrode layer and a second electrode layer,
The metal structure comprises a first metal structure and the second metal structure insulated by the insulating material,
The first electrode layer is located on the first metal structure, the second electrode layer is a light emitting device package located on the second metal structure.
At least a portion of the light emitting element is located on the first portion.
The light emitting device package, wherein the entire light emitting device is located on the first portion, the electrode layer is located on the second portion.
The light emitting device package having a contact hole penetrating the body in the first portion.
A light emitting device package comprising a plurality of the second portion.
The light emitting device package is used for the light emitting device package lighting system.
Filling the mold with an insulating material
Method of manufacturing a body for a light emitting device package comprising a.
Method of manufacturing a light emitting device package body having the metal structure has a net shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020100076469A KR101797755B1 (en) | 2010-08-09 | 2010-08-09 | Light emitting device package and method for manufacutring body of light emitting device pacakge |
Applications Claiming Priority (1)
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KR1020100076469A KR101797755B1 (en) | 2010-08-09 | 2010-08-09 | Light emitting device package and method for manufacutring body of light emitting device pacakge |
Publications (2)
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KR20120014420A true KR20120014420A (en) | 2012-02-17 |
KR101797755B1 KR101797755B1 (en) | 2017-12-12 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140109673A (en) * | 2013-03-06 | 2014-09-16 | 삼성전자주식회사 | Light Emitting diode package having flip-chip bonding structure |
CN107731757A (en) * | 2017-09-27 | 2018-02-23 | 开发晶照明(厦门)有限公司 | Electrooptical device and its substrate |
KR20200019538A (en) * | 2018-08-14 | 2020-02-24 | 엘지이노텍 주식회사 | Light emitting device package and light source unit |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030057421A1 (en) | 2001-09-27 | 2003-03-27 | Tzer-Perng Chen | High flux light emitting diode having flip-chip type light emitting diode chip with a transparent substrate |
-
2010
- 2010-08-09 KR KR1020100076469A patent/KR101797755B1/en active IP Right Grant
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140109673A (en) * | 2013-03-06 | 2014-09-16 | 삼성전자주식회사 | Light Emitting diode package having flip-chip bonding structure |
US9203005B2 (en) | 2013-03-06 | 2015-12-01 | Samsung Electronics Co., Ltd. | Light-emitting diode (LED) package having flip-chip bonding structure |
CN107731757A (en) * | 2017-09-27 | 2018-02-23 | 开发晶照明(厦门)有限公司 | Electrooptical device and its substrate |
CN107731757B (en) * | 2017-09-27 | 2019-11-08 | 开发晶照明(厦门)有限公司 | Electrooptical device and its substrate |
KR20200019538A (en) * | 2018-08-14 | 2020-02-24 | 엘지이노텍 주식회사 | Light emitting device package and light source unit |
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Publication number | Publication date |
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KR101797755B1 (en) | 2017-12-12 |
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