KR20110137814A - 발광다이오드 - Google Patents

발광다이오드 Download PDF

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Publication number
KR20110137814A
KR20110137814A KR1020117025033A KR20117025033A KR20110137814A KR 20110137814 A KR20110137814 A KR 20110137814A KR 1020117025033 A KR1020117025033 A KR 1020117025033A KR 20117025033 A KR20117025033 A KR 20117025033A KR 20110137814 A KR20110137814 A KR 20110137814A
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KR
South Korea
Prior art keywords
semiconductor body
light emitting
region
emitting diode
electromagnetic radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020117025033A
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English (en)
Korean (ko)
Inventor
마티아스 사바틸
시몬 코쿠르
슈데판 그뢰쉬
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20110137814A publication Critical patent/KR20110137814A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials

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  • Led Devices (AREA)
KR1020117025033A 2009-03-25 2010-03-15 발광다이오드 Ceased KR20110137814A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102009001844 2009-03-25
DE102009001844.1 2009-03-25
DE102009020127.0 2009-05-06
DE102009020127.0A DE102009020127B4 (de) 2009-03-25 2009-05-06 Leuchtdiode

Publications (1)

Publication Number Publication Date
KR20110137814A true KR20110137814A (ko) 2011-12-23

Family

ID=42664166

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117025033A Ceased KR20110137814A (ko) 2009-03-25 2010-03-15 발광다이오드

Country Status (8)

Country Link
US (1) US20120256161A1 (https=)
EP (1) EP2412021B1 (https=)
JP (1) JP2012521644A (https=)
KR (1) KR20110137814A (https=)
CN (1) CN102362348A (https=)
DE (1) DE102009020127B4 (https=)
TW (1) TWI520374B (https=)
WO (1) WO2010108811A1 (https=)

Families Citing this family (9)

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US20130264588A1 (en) * 2012-04-09 2013-10-10 Phostek, Inc. Compact led package
DE102015116595A1 (de) 2015-09-30 2017-03-30 Osram Opto Semiconductors Gmbh Bauelement mit einem Licht emittierenden Halbleiterchip
DE102016101442B4 (de) 2016-01-27 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement
DE102016104280A1 (de) * 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102016113002B4 (de) 2016-07-14 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen
FR3061605B1 (fr) * 2016-12-29 2019-05-31 Aledia Dispositif optoélectronique à diodes électroluminescentes
DE102018124473A1 (de) 2018-10-04 2020-04-09 Osram Opto Semiconductors Gmbh Optoelektronisches bauteil, verfahren zur ansteuerung eines optoelektronischen bauteils und beleuchtungsvorrichtung
JP7414419B2 (ja) * 2019-07-30 2024-01-16 キヤノン株式会社 発光素子及び発光素子の製造方法
CN115172544A (zh) * 2022-06-22 2022-10-11 广东中民工业技术创新研究院有限公司 一种基于全氮化物的外延芯片结构和发光器件

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JPH11135838A (ja) * 1997-10-20 1999-05-21 Ind Technol Res Inst 白色発光ダイオード及びその製造方法
JP2003519438A (ja) * 1999-04-27 2003-06-17 シュラムバーガー ホールディングス リミテッド 放射源
JP2003502847A (ja) * 1999-06-14 2003-01-21 アウグスト，カルロス・ジヨタ・エルリ・ペー 積み重ね型波長選択オプトエレクトロニクス装置
HK1048709A1 (zh) * 1999-12-03 2003-04-11 Cree, Inc. 透过使用内置及外置光元件提高发光二极管(led)中的抽光效果
TW497277B (en) * 2000-03-10 2002-08-01 Toshiba Corp Semiconductor light emitting device and method for manufacturing the same
JP2004296219A (ja) * 2003-03-26 2004-10-21 Fuji Photo Film Co Ltd 発光素子
US7009213B2 (en) * 2003-07-31 2006-03-07 Lumileds Lighting U.S., Llc Light emitting devices with improved light extraction efficiency
DE10354936B4 (de) * 2003-09-30 2012-02-16 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
JP2005252222A (ja) * 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
DE102004052245A1 (de) * 2004-06-30 2006-02-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und strahlungsemittierendes Halbleiterbauelement mit einem derartigen Halbleiterchip
US7223998B2 (en) * 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
TWI267212B (en) * 2004-12-30 2006-11-21 Ind Tech Res Inst Quantum dots/quantum well light emitting diode
JP4971672B2 (ja) * 2005-09-09 2012-07-11 パナソニック株式会社 発光装置
US7285791B2 (en) * 2006-03-24 2007-10-23 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
TW200807769A (en) * 2006-06-12 2008-02-01 3M Innovative Properties Co LED device with re-emitting semiconductor construction and optical element
EP1887634A3 (de) * 2006-08-11 2011-09-07 OSRAM Opto Semiconductors GmbH Strahlungsemittierendes Halbleiterbauelement
US9018619B2 (en) * 2006-10-09 2015-04-28 Cree, Inc. Quantum wells for light conversion
TWI349371B (en) * 2007-02-13 2011-09-21 Epistar Corp An optoelectronical semiconductor device having a bonding structure
EP2206164A2 (en) * 2007-10-08 2010-07-14 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
JP2009099893A (ja) * 2007-10-19 2009-05-07 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
US20100295075A1 (en) * 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction

Also Published As

Publication number Publication date
DE102009020127B4 (de) 2025-12-31
CN102362348A (zh) 2012-02-22
EP2412021B1 (de) 2017-02-01
US20120256161A1 (en) 2012-10-11
WO2010108811A1 (de) 2010-09-30
DE102009020127A1 (de) 2010-09-30
TWI520374B (zh) 2016-02-01
JP2012521644A (ja) 2012-09-13
EP2412021A1 (de) 2012-02-01
TW201044634A (en) 2010-12-16

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