DE102009020127B4 - Leuchtdiode - Google Patents

Leuchtdiode

Info

Publication number
DE102009020127B4
DE102009020127B4 DE102009020127.0A DE102009020127A DE102009020127B4 DE 102009020127 B4 DE102009020127 B4 DE 102009020127B4 DE 102009020127 A DE102009020127 A DE 102009020127A DE 102009020127 B4 DE102009020127 B4 DE 102009020127B4
Authority
DE
Germany
Prior art keywords
semiconductor body
light
emitting diode
wavelength range
electromagnetic radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102009020127.0A
Other languages
German (de)
English (en)
Other versions
DE102009020127A1 (de
Inventor
Dr. Sabathil Matthias
Simon Kocur
Stefan Grötsch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102009020127.0A priority Critical patent/DE102009020127B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to PCT/EP2010/053304 priority patent/WO2010108811A1/de
Priority to JP2012501239A priority patent/JP2012521644A/ja
Priority to US13/260,562 priority patent/US20120256161A1/en
Priority to KR1020117025033A priority patent/KR20110137814A/ko
Priority to CN2010800129718A priority patent/CN102362348A/zh
Priority to EP10710274.1A priority patent/EP2412021B1/de
Priority to TW099108111A priority patent/TWI520374B/zh
Publication of DE102009020127A1 publication Critical patent/DE102009020127A1/de
Application granted granted Critical
Publication of DE102009020127B4 publication Critical patent/DE102009020127B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials

Landscapes

  • Led Devices (AREA)
DE102009020127.0A 2009-03-06 2009-05-06 Leuchtdiode Active DE102009020127B4 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102009020127.0A DE102009020127B4 (de) 2009-03-25 2009-05-06 Leuchtdiode
JP2012501239A JP2012521644A (ja) 2009-03-25 2010-03-15 発光ダイオード
US13/260,562 US20120256161A1 (en) 2009-03-06 2010-03-15 Light Diode
KR1020117025033A KR20110137814A (ko) 2009-03-25 2010-03-15 발광다이오드
PCT/EP2010/053304 WO2010108811A1 (de) 2009-03-25 2010-03-15 Leuchtdiode
CN2010800129718A CN102362348A (zh) 2009-03-25 2010-03-15 发光二极管
EP10710274.1A EP2412021B1 (de) 2009-03-25 2010-03-15 Leuchtdiode
TW099108111A TWI520374B (zh) 2009-03-25 2010-03-19 發光二極體

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009001844 2009-03-25
DE102009001844.1 2009-03-25
DE102009020127.0A DE102009020127B4 (de) 2009-03-25 2009-05-06 Leuchtdiode

Publications (2)

Publication Number Publication Date
DE102009020127A1 DE102009020127A1 (de) 2010-09-30
DE102009020127B4 true DE102009020127B4 (de) 2025-12-31

Family

ID=42664166

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009020127.0A Active DE102009020127B4 (de) 2009-03-06 2009-05-06 Leuchtdiode

Country Status (8)

Country Link
US (1) US20120256161A1 (https=)
EP (1) EP2412021B1 (https=)
JP (1) JP2012521644A (https=)
KR (1) KR20110137814A (https=)
CN (1) CN102362348A (https=)
DE (1) DE102009020127B4 (https=)
TW (1) TWI520374B (https=)
WO (1) WO2010108811A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130264588A1 (en) * 2012-04-09 2013-10-10 Phostek, Inc. Compact led package
DE102015116595A1 (de) 2015-09-30 2017-03-30 Osram Opto Semiconductors Gmbh Bauelement mit einem Licht emittierenden Halbleiterchip
DE102016101442B4 (de) 2016-01-27 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement
DE102016104280A1 (de) * 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102016113002B4 (de) 2016-07-14 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelemente mit verbesserter Effizienz und Verfahren zur Herstellung von Bauelementen
FR3061605B1 (fr) * 2016-12-29 2019-05-31 Aledia Dispositif optoélectronique à diodes électroluminescentes
DE102018124473A1 (de) 2018-10-04 2020-04-09 Osram Opto Semiconductors Gmbh Optoelektronisches bauteil, verfahren zur ansteuerung eines optoelektronischen bauteils und beleuchtungsvorrichtung
JP7414419B2 (ja) * 2019-07-30 2024-01-16 キヤノン株式会社 発光素子及び発光素子の製造方法
CN115172544A (zh) * 2022-06-22 2022-10-11 广东中民工业技术创新研究院有限公司 一种基于全氮化物的外延芯片结构和发光器件

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1132977A2 (en) * 2000-03-10 2001-09-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US20040041164A1 (en) * 1999-12-03 2004-03-04 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
US20050023545A1 (en) * 2003-07-31 2005-02-03 Lumileds Lighting U.S., Llc Light emitting devices with improved light extraction efficiency
DE102004052245A1 (de) * 2004-06-30 2006-02-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und strahlungsemittierendes Halbleiterbauelement mit einem derartigen Halbleiterchip
WO2006062588A1 (en) * 2004-12-09 2006-06-15 3M Innovative Properties Company Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission
US20060145137A1 (en) * 2004-12-30 2006-07-06 Te-Chung Wang Quantum dot/quantum well Light Emitting Diode
US20070045609A1 (en) * 2005-06-16 2007-03-01 Cree, Inc. Quantum wells for light conversion
WO2007146860A1 (en) * 2006-06-12 2007-12-21 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US20080035944A1 (en) * 2006-08-11 2008-02-14 Osram Opto Semiconductors Gmbh Radiation emitting element
US20080190479A1 (en) * 2007-02-13 2008-08-14 Epistar Corporation Optoelectronical semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11135838A (ja) * 1997-10-20 1999-05-21 Ind Technol Res Inst 白色発光ダイオード及びその製造方法
JP2003519438A (ja) * 1999-04-27 2003-06-17 シュラムバーガー ホールディングス リミテッド 放射源
JP2003502847A (ja) * 1999-06-14 2003-01-21 アウグスト，カルロス・ジヨタ・エルリ・ペー 積み重ね型波長選択オプトエレクトロニクス装置
JP2004296219A (ja) * 2003-03-26 2004-10-21 Fuji Photo Film Co Ltd 発光素子
DE10354936B4 (de) * 2003-09-30 2012-02-16 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
JP2005252222A (ja) * 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
US7223998B2 (en) * 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
JP4971672B2 (ja) * 2005-09-09 2012-07-11 パナソニック株式会社 発光装置
US7285791B2 (en) * 2006-03-24 2007-10-23 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
EP2206164A2 (en) * 2007-10-08 2010-07-14 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
JP2009099893A (ja) * 2007-10-19 2009-05-07 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
US20100295075A1 (en) * 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040041164A1 (en) * 1999-12-03 2004-03-04 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
EP1132977A2 (en) * 2000-03-10 2001-09-12 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US20050023545A1 (en) * 2003-07-31 2005-02-03 Lumileds Lighting U.S., Llc Light emitting devices with improved light extraction efficiency
DE102004052245A1 (de) * 2004-06-30 2006-02-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und strahlungsemittierendes Halbleiterbauelement mit einem derartigen Halbleiterchip
WO2006062588A1 (en) * 2004-12-09 2006-06-15 3M Innovative Properties Company Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission
US20060145137A1 (en) * 2004-12-30 2006-07-06 Te-Chung Wang Quantum dot/quantum well Light Emitting Diode
US20070045609A1 (en) * 2005-06-16 2007-03-01 Cree, Inc. Quantum wells for light conversion
WO2007146860A1 (en) * 2006-06-12 2007-12-21 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US20080035944A1 (en) * 2006-08-11 2008-02-14 Osram Opto Semiconductors Gmbh Radiation emitting element
US20080190479A1 (en) * 2007-02-13 2008-08-14 Epistar Corporation Optoelectronical semiconductor device

Also Published As

Publication number Publication date
CN102362348A (zh) 2012-02-22
EP2412021B1 (de) 2017-02-01
US20120256161A1 (en) 2012-10-11
WO2010108811A1 (de) 2010-09-30
DE102009020127A1 (de) 2010-09-30
TWI520374B (zh) 2016-02-01
JP2012521644A (ja) 2012-09-13
KR20110137814A (ko) 2011-12-23
EP2412021A1 (de) 2012-02-01
TW201044634A (en) 2010-12-16

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Legal Events

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OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
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Ipc: H10H0020000000

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