KR20110075188A - 3d images organic electro-luminescence device - Google Patents

Abstract

PURPOSE: A 3D image organic electro-luminescence device is provided to form a 3D image and simultaneously to form a light and thin film type OLED. CONSTITUTION: A first organic electro-luminescence panel(110) comprises a first driving thin film transistor and a first organic electro-luminescence diode. A first organic electro-luminescence panel forms a first image. A first organic electro-luminescence panel projects the first image and includes a second driving thin film transistor and a second organic electro-luminescence diode(E1). A second organic electro-luminescence panel(120) forms a second image which is overlapped with the first image so as to make a 3D image. The second organic electro-luminescence panel includes a protective film inserted between the first and second organic electro-luminescence panels.

Description

3D image organic electro-luminescence device

The present invention relates to an organic electroluminescent device, and more particularly, to a three-dimensional stereoscopic image organic electroluminescent device capable of three-dimensional three-dimensional representation.

Until recently, cathode ray tubes (CRT) have been mainly used as display devices. However, in recent years, flat panel such as plasma display panel (PDP), liquid crystal display device (LCD), organic electro-luminescence device (OLED), which can replace CRT Display devices are widely researched and used.

Among the flat panel display devices as described above, the organic light emitting display device (hereinafter referred to as OLED) is a self-light emitting device, and since the backlight used in the liquid crystal display device which is a non-light emitting device is not necessary, a light weight can be achieved.

In addition, it has better viewing angle and contrast ratio than liquid crystal display, and is advantageous in terms of power consumption. It is also possible to drive DC low voltage, has fast response speed, and is strong against external shock because its internal components are solid. It has advantages

In particular, since the manufacturing process is simple, there is an advantage that can reduce the production cost more than the conventional liquid crystal display device.

OLEDs having these characteristics are largely divided into a passive matrix type and an active matrix type. The passive matrix type constitutes a device in a matrix form while crossing a signal line, whereas an active matrix type is a pixel. A thin film transistor, which is a switching element that turns on / off, is positioned for each pixel area.

In recent years, the passive matrix type has many limited elements such as resolution, power consumption, and lifespan. Accordingly, active matrix type OLEDs capable of realizing high resolution and large screens have been actively studied.

1 is a circuit diagram of one pixel area of a general active matrix OLED.

Each pixel area P includes a switching thin film transistor STr, a driving thin film transistor DTr, and a storage capacitor StgC.

In more detail, the gate wiring GL is formed in a first direction, and extends in a second direction crossing the first direction to define the pixel region P together with the gate wiring GL. The wiring DL is formed, and the power supply wiring PL is spaced apart from the data wiring DL to apply a power supply voltage.

In each pixel area P, a switching thin film transistor STr connected to the two wires is formed at a portion where the gate wiring GL and the data wiring DL intersect, and the switching thin film transistor STr is a driving thin film transistor ST. DTr) and the storage capacitor StgC, and the driving thin film transistor DTr is connected between the power supply line PL and the organic light emitting diode E.

That is, the first electrode, which is one terminal of the organic light emitting diode E, is connected to the drain electrode of the driving thin film transistor DTr, and the second electrode, which is the other terminal, is grounded. At this time, the power supply line PL transfers the power supply voltage to the organic light emitting diode E.

Therefore, in each pixel region P, when a signal is applied through the gate wiring GL, the switching thin film transistor STr is turned on for each pixel region P, and the signal of the data wiring DL is driven. Since the driving thin film transistor DTr is turned on by being transferred to the gate electrode of the thin film transistor DTr, light is output through the organic light emitting diode E.

On the other hand, in recent years, the demand for users to display more realistic images with three-dimensional image, that is, a three-dimensional display device has been increased, and in response to this, researches on OLEDs capable of three-dimensional three-dimensional representation are actively conducted. It is becoming.

An object of the present invention is to provide a three-dimensional stereoscopic image and at the same time provide a lightweight and thin OLED.

In order to achieve the above object, the present invention includes a first organic EL panel including a first driving thin film transistor and a first organic light emitting diode, and implementing a first image; A second organic field panel through which the first image is transmitted and including a second driving thin film transistor and a second organic light emitting diode, the second organic field panel overlapping the first image to implement a second image; Provided is a three-dimensional stereoscopic image organic light emitting display device including a protective film interposed between the first and second organic field panels.

In this case, the first and second organic light emitting diodes are composed of first and second electrodes and a light emitting layer, respectively, and the first electrode of the second organic light emitting diode is indium-tin-oxide (ITO) or indium- It is made of one selected from a transparent conductive material containing zinc oxide (IZO), wherein the first electrode of the first organic light emitting diode is aluminum (Al) or aluminum alloy (AlNd), magnesium (Mg), gold (Au) ) And one selected from metal materials such as silver (Ag).

In addition, the protective film has a hydrophobicity or includes a hygroscopic barium oxide (BaO) or calcium oxide (CaO), the first and second organic field panel through the buffer layer, encapsulation (encapsulation) do.

In this case, the buffer layer is an inorganic insulating material including silicon nitride (SiNx), silicon oxide (Si0 ₂ ) or alumina (Al ₂ O ₃ ), polyacrylate, polyimide, polyamide, and polyamide. Or an organic insulating material including benzocyclobutene (BCB), which is alternately stacked, and the driving thin film transistor includes a semiconductor layer, a gate electrode, a drain, and a source electrode.

In addition, the first electrode is electrically connected to the drain electrode.

According to the present invention, the first OLED panel and the transparent second OLED panel are provided in one display device to implement different image information, thereby realizing a three-dimensional image having a sense of depth and reality. .

In addition, at the same time by encapsulating the first and second OLED panel through a protective film at the same time, there is an effect that can implement a lightweight and thin stereoscopic OLED.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

FIG. 2 is a schematic cross-sectional view of an OLED capable of realizing a stereoscopic image according to an exemplary embodiment of the present invention, and FIG. 3 is an enlarged cross-sectional view of a portion of FIG. 2.

As shown, the OLED (100, hereinafter, referred to as a three-dimensional OLED) capable of realizing a stereoscopic image according to the present invention is the first and second OLED panel 110, 120 for implementing a different image is hygroscopic and adhesive It is spaced apart from each other through the protective film 130 having.

In detail, the first OLED panel 110 includes a first switching thin film transistor (not shown), a first substrate 101 on which a driving thin film transistor DTr1 and a first organic light emitting diode E1 are formed. The first driving thin film transistor DTr1 includes a semiconductor layer 103, a gate electrode 107, and source and drain electrodes 113 and 115.

That is, the semiconductor layer 103 is formed on the first substrate 101 constituting the first OLED panel 110. The semiconductor layer 103 is made of silicon and the center portion of the active region 103b forms a channel. The source and drain regions 103a and 103c doped with a high concentration of impurities on both sides of the region 103b.

The gate insulating layer 105 is formed on the semiconductor layer 103.

A gate electrode 107 and a gate wiring extending in one direction are formed on the gate insulating layer 105 in correspondence with the active region 103b of the semiconductor layer 103.

The first interlayer insulating film 109a is formed on the entire upper surface of the gate electrode 107 and the gate wiring (not shown). At this time, the first interlayer insulating film 109a and the gate insulating film 105 below are formed in the active region. First and second semiconductor layer contact holes 111a and 111b exposing the source and drain regions 103a and 103c respectively positioned on both side surfaces thereof are provided.

Next, an upper portion of the first interlayer insulating layer 109a including the first and second semiconductor layer contact holes 111a and 111b is spaced apart from each other and exposed through the first and second semiconductor layer contact holes 111a and 111b. And source and drain electrodes 113 and 115 in contact with the drain regions 103a and 103c, respectively.

The second interlayer insulating film 109b is formed on the first interlayer insulating film 109a exposed between the source and drain electrodes 113 and 115 and the two electrodes 113 and 115. And a drain contact hole 117 exposing the drain electrode 115.

Although not shown in the drawing, a data line (not shown) defining the pixel area P is formed to cross the gate line (not shown). The first switching thin film transistor (not shown) has the same structure as the first driving thin film transistor DTr1 and is connected to the first driving thin film transistor DTr1.

The first electrode 211 and the organic light emitting layer 213 constituting the first organic electroluminescent diode E1 of the first OLED panel 110 are located in an area that substantially displays an image on the second interlayer insulating film 109b. The second electrode 215 is sequentially formed.

The first buffer layer 110a is formed on the first driving thin film transistor DTr1 and the first organic light emitting diode E1 to form the first driving thin film transistor DTr1 and the first organic light emitting diode E1. Will be protected.

The first buffer layer 110a includes a plurality of layers in which at least one inorganic insulating material and at least one organic insulating material are alternately stacked, wherein the inorganic insulating material is silicon nitride (SiNx), silicon oxide (Si0 ₂ ), or alumina. One of (Al ₂ O ₃ ) or the organic insulating material is selected from polyacrylate, polyimide, polyamide or benzocyclobutene (BCB).

In this case, the reason why the inorganic insulating material and the organic insulating material are alternately stacked is because the inorganic insulating material is suitable for preventing oxygen penetration and the organic insulating material is suitable for preventing the penetration of moisture.

Through this, the first OLED panel 110 is encapsulated.

The first electrode 211 is formed for each pixel region P, and a bank 121 is positioned between the first electrodes 211 formed for each pixel region P. FIG.

That is, the bank 121 is formed in a matrix type having a lattice structure as a whole of the first substrate 101, and the first electrode 211 is separated for each pixel region P using the bank 121 as a boundary portion for each pixel region. It is formed in a structure.

The first electrode 211 is connected to the drain electrode 115 of the first driving thin film transistor DTr1 of each pixel region P. Referring to FIG.

In such a case, the first electrode 211 may have a relatively high work function such as aluminum (Al) or aluminum alloy (AlNd), magnesium (Mg), gold (Au), or silver (A) to serve as an anode electrode. It is formed of a metal material such as Ag).

In addition, the second electrode 215 is made of a metal material having a relatively low work function value to serve as a cathode, and the second electrode 215 is a semi-transparent metal film thinly deposited with a low work function metal material. A thick transparent conductive material is deposited on the substrate.

Therefore, since the light emitted from the organic light emitting layer 213 is transmitted through the second electrode 215, the first OLED panel 110 is driven by the top emission method.

When a predetermined voltage is applied to the first electrode 211 and the second electrode 215 according to the selected color signal, the first OLED panel 110 may include holes and second electrodes injected from the first electrode 211. The electrons applied from the 215 are transported to the organic light emitting layer 213 to form excitons, and when such excitons transition from the excited state to the ground state, light is generated and emitted in the form of visible light.

At this time, since the emitted light passes through the second electrode 215 to the outside, the first OLED panel 110 implements an arbitrary image.

In addition, the stereoscopic OLED 100 includes a second OLED panel 120 facing the first OLED panel 110 with the protective film 130 interposed therebetween, and the second OLED panel 120 also includes a second switching thin film transistor. (Not shown) and the driving thin film transistor DTr2 and the second substrate 102 on which the second organic light emitting diode E2 is formed.

In addition, a second buffer layer 120a is formed on the second driving thin film transistor DTr2 and the second organic light emitting diode E2 to form the second driving thin film transistor DTr2 and the second organic light emitting diode E2. To protect.

The second buffer layer 120a also includes a plurality of layers in which at least one inorganic insulating material and at least one organic insulating material are alternately stacked, wherein the inorganic insulating material is silicon nitride (SiNx), silicon oxide (Si0 ₂ ), or alumina. One of (Al ₂ O ₃ ) or the organic insulating material is selected from polyacrylate, polyimide, polyamide, or benzocyclobutene (BCB).

Through this, the second OLED panel 120 is encapsulated.

In more detail, the second driving thin film transistor DTr2 is formed on the second substrate 102 to correspond to the bank 121 formed between the pixel regions P of the first OLED panel 110.

Like the first driving thin film transistor DTr1 described above, the second driving thin film transistor DTr2 includes the semiconductor layer 203, the gate electrode 207, and the source and drain electrodes 213 and 215. 205 and first and second semiconductor layer contact holes 211a and 211b and first and second interlayer insulating films 209a and 209b.

Although not shown in the drawing, the second switching thin film transistor (not shown) has the same structure as the second driving thin film transistor DTr2 and is connected to the second driving thin film transistor DTr2.

In addition, the first electrode 311, the organic light emitting layer 313, and the second electrode 315 are formed in an area in which the first organic light emitting diode E1 of the first OLED panel 110 is formed to display an image. A second organic electroluminescent diode E2 is also formed.

The first electrode 311 of the second organic light emitting diode E2 is also formed for each pixel region P, and a bank 221 is positioned between the first electrodes 311 formed for each pixel region P. FIG. .

The first electrode 311 of the second organic light emitting diode E2 is connected to the drain electrode 215 of the second driving thin film transistor DTr2 of each pixel region P.

In this case, the first electrode 311 of the second organic light emitting diode E2 is formed of a material having a relatively high work function so as to serve as an anode electrode, and the second organic light emitting diode ( The second electrode 315 of E2) is made of a metal material having a relatively low work function value to serve as a cathode.

When a predetermined voltage is applied to the first electrode 311 and the second electrode 315 of the second organic light emitting diode E2 according to the selected color signal of the second OLED panel 120, the second organic light emitting diode Holes injected from the first electrode 311 of E2 and electrons applied from the second electrode 315 are transported to the organic light emitting layer 313 to form excitons, and the excitons are excited to the ground state. When it becomes a cloth, light is generated and emitted in the form of visible light.

Here, the first electrode 311 of the second organic light emitting diode E2 is made of indium tin oxide (ITO) or indium zinc oxide (IZO), which is a transparent conductive material. The second electrode 315 of the diode E2 is formed by thickly depositing a transparent conductive material on a semi-transparent metal film in which a thin metal material having a low work function is deposited. The light emitted from the light is transmitted through the first electrode 311 of the second organic light emitting diode E2 to be emitted.

Accordingly, in the second OLED panel 120 of the present invention, light emitted from the organic light emitting layer 313 of the second organic light emitting diode E2 may be emitted toward both the first and second substrates 101 and 102. In addition, the transparent OLED panel may implement an image that is implemented from the first OLED panel 110 through the second OLED panel 120.

Here, the organic light emitting layers 213 and 313 of the first and second OLED panels 110 and 120 may be formed of a single layer made of a light emitting material, and a hole injection layer and a hole may be used to increase luminous efficiency. It may be composed of multiple layers of a hole transporting layer, an emitting material layer, an electron transporting layer, and an electron injection layer.

The first and second switching thin film transistors (not shown) and the first and second driving thin film transistors DTr1 and DTr2 are top gates in which the semiconductor layers 103 and 203 are made of a polysilicon semiconductor layer. ) Is shown as an example, and may be formed as a bottom gate type consisting of amorphous silicon of pure water and impurities as a modification thereof.

In this case, the first and second OLED panels 110 and 120 are bonded to each other by a predetermined interval through the protective film 130 interposed between the first and second OLED panels 110 and 120.

The protective film 130 may include barium oxide (BaO) or calcium oxide (CaO) having hydrophobic properties or hygroscopic properties therein. As a result, the protective film 130 itself is hydrophobic to prevent moisture penetration or to prevent contact with the organic light emitting layers 213 and 313 due to the hygroscopic property even if moisture penetrates into the protective film 130. Can be.

The stereoscopic OLED 100 according to the present invention allows the first and second OLED panels 110 and 120 to implement different images, thereby realizing a three-dimensional stereoscopic image.

That is, the second OLED panel 120 is a transmissive OLED panel, and the first image implemented through the first OLED panel 110 is realized through the second OLED panel 120, and at the same time the first image is realized. By implementing the second image through the second OLED panel 120, the actual image implemented through the stereoscopic OLED 100 is an image in which the first image and the second image are superimposed on each other.

Here, the principle of implementing the 3D stereoscopic image through the stereoscopic OLED 100 according to an embodiment of the present invention will be described in more detail.

4 is a conceptual diagram briefly illustrating a principle of implementing a 3D stereoscopic image through a stereoscopic OLED according to an exemplary embodiment of the present invention.

As shown, the first image implemented through the first OLED panel (110 in FIG. 3) of the stereoscopic OLED (100 in FIG. 3) passes through the second OLED panel (120 in FIG. 3), thereby allowing the stereoscopic OLED (FIG. 3). 100 of FIG. 3, and at the same time, a second image is implemented on the front of the stereoscopic OLED (100 of FIG. 3) in the second OLED panel (120 of FIG. 3).

By such a configuration, the stereoscopic OLED (100 in FIG. 3) realizes an image in which the first and second images substantially overlap each other.

Accordingly, viewers who watch the image implemented in the stereoscopic OLED (100 in FIG. 3) may include the first and second implemented in the first OLED panel (110 in FIG. 3) and the second OLED panel (120 in FIG. 3), respectively. The images overlap with each other to see the final image displayed with a three-dimensional depth.

That is, a viewer looking at the three-dimensional OLED (100 in FIG. 3) sees different two-dimensional images, and fuses them with each other to reproduce the depth and realism of the original three-dimensional image.

As described above, the three-dimensional OLED (100 in FIG. 3) of the present invention includes a first OLED panel (110 in FIG. 3) and a transparent second OLED panel (120 in FIG. 3) substantially in one display device. By implementing different image information, a three-dimensional image having a sense of depth and a sense of reality is realized, and at the same time, the first and second OLED panels (110 and 120 of FIG. 3) are protected through a protective film (130 of FIG. 3). By encapsulating at the same time, a lightweight and thin stereoscopic OLED (100 in FIG. 3) can be realized.

In more detail, at least two display apparatuses are generally required to implement a 3D stereoscopic image through two different images. That is, in order to implement a 3D stereoscopic image, it is common to configure two display devices that implement different images so as to overlap each other.

Therefore, in order to realize a three-dimensional stereoscopic image through the OLED panel as in the embodiment of the present invention, two OLED panels each encapsulated must be combined to combine the two OLED panels.

Thus, the three-dimensional OLED combined with each of the two encapsulated OLED panels must be provided with at least four substrates, or two substrates and two protective films, and also includes an adhesive layer for bonding the two OLED panels. By doing so, there are too many components against the trend of light weight and thickness.

However, the three-dimensional OLED (100 in FIG. 3) of the present invention by the first and second OLED panels (110, 120 of FIG. 3) to be encapsulated through one protective film (130 of FIG. 3), The three-dimensional OLED (100 in FIG. 3) according to the embodiment of the present invention requires only two substrates and one protective film (130 in FIG. 3), and in particular, may delete the adhesive layer.

Because of this, the overall thickness of the three-dimensional OLED (100 in FIG. 3) can be reduced compared to the conventional.

On the other hand, the protective film (130 of FIG. 3) may have a barium oxide (BaO) or calcium oxide (CaO) having a hydrophobic property or hygroscopic properties therein. As a result, the protective film 130 (FIG. 3) itself becomes hydrophobic to prevent moisture penetration or even if moisture penetrates into the protective film 130 (FIG. 3). ) Can be prevented.

In addition, since the protective film (130 of FIG. 3) is formed directly on the first and second organic light emitting diodes (E1 and E2 of FIG. 3), a failure turn (not shown) may be omitted, and thus a polymer material is formed. As the temperature is heated or stored for a long time, it is possible to prevent a problem that a pollutant such as moisture or gas penetrates into the three-dimensional OLED (100 of FIG. 3) from the outside through a failure turn (not shown).

In addition, in the three-dimensional OLED (100 in FIG. 3) of the present invention, even if a pressure such as pressing from the outside is applied, the pressing of the three-dimensional OLED (100 in FIG. 3) is not generated by the protective film (130 in FIG. 3). And cracks of the first and second electrodes (111 and 115 in FIG. 3) or the first and second driving thin film transistors (DTr1 and DTr2 in FIG. 3) of the second organic light emitting diode (E1 and E2 in FIG. 3). cracks can be prevented.

As a result, problems such as dark spot defects may be prevented from occurring, thereby preventing the problem of uneven brightness or image characteristics.

In addition, the three-dimensional OLED (100 in FIG. 3) of the present invention is shown a motion parallax effect that the image is different depending on the viewer's perspective, there is a vertex that has a more three-dimensional effect.

5 is a diagram illustrating a motion parallax effect shown in the three-dimensional OLED of the present invention.

As shown, the first image displays a background screen having a reference line in the center thereof, and the second image shows the background substantially as shown when the viewer moves to the left and right sides when a person comes out in the center portion. It can be seen that the image is seen as the position of a person changes with the center.

In the case of the OLED (100 in FIG. 3) capable of realizing a three-dimensional stereoscopic image according to the present invention, the first and second images spaced apart from each other with different image information by using one display element are substantially spaced apart from each other. As a result, the overall thickness can be reduced as compared with the conventional display device that used to implement a stereoscopic image using two display devices.

Next, the manufacturing process of the three-dimensional OLED will be described.

6A to 6G are cross-sectional views of manufacturing steps of an OLED according to an exemplary embodiment of the present invention.

First, as shown in FIG. 6A, a plurality of pixel regions P are formed, and each pixel region P includes a first switching thin film transistor (not shown), a first driving thin film transistor DTr1, and a first driving thin film transistor DTr1. 1 The first substrate 101 provided with the organic light emitting diode E1 is prepared.

At the same time, as shown in FIG. 6B, each pixel region P includes a second switching thin film transistor (not shown), a second driving thin film transistor DTr2, and a second organic light emitting diode E2. 2 Prepare the substrate 102.

Here, the first and second switching thin film transistors (not shown) and the first and second driving thin film transistors DTr1 and DTr2 and the first and second organic light emitting diodes E1 and E2 formed in each pixel region P are shown. ), The amorphous silicon is deposited on each pixel region P of the first and second substrates 101 and 102 to form an amorphous silicon layer (not shown), and irradiate the laser beam with respect to The heat treatment is performed to crystallize the amorphous silicon layer into a polysilicon layer (not shown).

Thereafter, a polysilicon layer (not shown) is patterned by performing a mask process to form semiconductor layers 103 and 203 of FIG. 3 in pure polysilicon state. In this case, before forming the amorphous silicon layer (not shown), an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is deposited on the first and second substrates 101 and 102 to form a buffer layer (not shown). ) May be formed.

Next, silicon oxide (SiO ₂ ) is deposited on the pure polysilicon semiconductor layers 103 and 203 of FIG. 3 to form gate insulating films 105 and 205 of FIG. 3.

Subsequently, one of the low-resistance metal materials such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), and copper alloy is deposited on the gate insulating layers 105 and 205 of FIG. 3 to form a first metal layer (not shown). ), And a mask process is performed to form gate electrodes 107 and 207 of FIG. 3 corresponding to the central portion of the semiconductor layers 103 and 203 of FIG. 3.

Next, by using the gate electrodes (107, 207 in Fig. 3) as a blocking mask, the semiconductor layer (Fig. 3 of Fig. 3 by doping impurities, i.e., trivalent elements or pentavalent elements, over the first and second substrates 101, 102 Impurities doped source and drain regions (103a, 103c, 203a, and 203c of FIG. 3) are formed at portions outside the gate electrodes (107 and 207 of FIG. 3) among the 103 and 203, and the doped gate electrodes are prevented. The portions corresponding to 107 and 207 in Fig. 3 form active regions of pure polysilicon (103b and 203b in Fig. 3).

Next, an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiO ₂ ) is deposited on the first and second substrates 101 and 102 on which the semiconductor layers 103 and 203 of FIG. 3 are formed. A first interlayer insulating film (109a, 209a of FIG. 3) is formed, and a mask process is performed to simultaneously or collectively pattern the first interlayer insulating film (109a, 209a of FIG. 3) and the lower gate insulating film (105, 205 of FIG. 3). Thus, the first and second semiconductor layer contact holes (111a, 111b, and 211a of FIG. 3) exposing the source and drain regions (103a, 103c, 203a, and 203c of FIG. 3, respectively) of the semiconductor layer (103, 203 of FIG. 3), respectively. , 211b).

Then, one of the metal materials such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, chromium (Cr), and molybdenum (Mo) on the first interlayer insulating film (109a, 209a of FIG. 3). To form a second metal layer (not shown), and to process and pattern the mask to form a source and drain region through the first and second semiconductor layer contact holes (111a, 111b, 211a, and 211b of FIG. 3). Source and drain electrodes (113, 115, 213, and 215 in Fig. 3) in contact with 103a, 103c, 203a, and 203c of three are formed.

Next, organic insulation such as photo acryl or benzocyclobutene (BCB) is formed on the first and second substrates 101 and 102 on which the source and drain electrodes 113, 115, 213, and 215 of FIG. 3 are formed. By applying a material and patterning it through a mask process, second interlayer insulating films (109b and 209b of FIG. 3) are formed.

At this time, the second interlayer insulating films 109b and 209b of FIG. 3 have drain electrode contact holes (117 and 217 of FIG. 3) exposing the drain electrodes 115 and 215 of FIG. 3.

Next, the first and second organic layers contact the drain electrodes 115 and 215 through the drain contact holes 117 and 217 of the second interlayer insulating layer 109b and 209b of FIG. 3. As one component of the electroluminescent diodes E1 and E2, first electrodes 211 and 311 constituting an anode are formed.

Subsequently, the first electrode is formed by applying and patterning one of the photosensitive organic insulating materials, for example, black resin, graphite powder, gravure ink, black spray, and black enamel, on top of the first electrodes 211 and 311. Banks 121 and 221 of FIG. 3 are formed on the upper portions 211 and 311.

The banks 121 and 221 of FIG. 3 are formed in a matrix type having a lattice structure as a whole to distinguish the pixel areas P from each other.

Next, an organic light emitting material is coated or deposited on the banks 121 and 221 of FIG. 3 to form the organic light emitting layers 213 and 312.

Although not shown in the drawings, the organic light emitting layers 213 and 312 may be composed of a single layer made of a light emitting material, and a hole injection layer, a hole transporting layer, a light emitting layer ( It may be composed of multiple layers of an emitting material layer, an electron transporting layer, and an electron injection layer.

Next, the second and second electrodes 215 and 315 are formed by thickly depositing a transparent conductive material on the translucent metal film on which the metal materials having a low work function are thinly deposited on the organic light emitting layers 213 and 312. 2 The organic light emitting diodes E1 and E2 are completed.

The first and second buffer layers 110a and 120a alternately stacked with at least one inorganic insulating material and at least one organic insulating material are respectively formed on the first and second organic light emitting diodes E1 and E2. It is formed to encapsulate the first and second OLED panels (110a, 120).

This completes the first OLED panel (110 in FIG. 6A) and the second OLED panel (120 in FIG. 6B) of the stereoscopic OLED (100 in FIG. 3).

In this case, the first electrode (211 of FIG. 3) of the first OLED panel 110 (FIG. 6A) may be formed of aluminum (Al) or aluminum alloy (AlNd), magnesium (Mg), gold (Au), silver (Ag), or the like. The second electrode (215 of FIG. 3) is formed of a metal material, and the second electrode (215 of FIG. 3) is formed by thickly depositing a transparent conductive material on a thinly deposited semitransparent metal film having a low work function.

In addition, the first electrode (311 of FIG. 3) of the second OLED panel 120 (FIG. 6B) is made of indium tin oxide (ITO) or indium zinc oxide (IZO), which is a transparent conductive material. The second electrode (315 of FIG. 3) is formed by thickly depositing a transparent conductive material on a thin translucent metal film having a low work function.

As a result, the second OLED panel 120 (FIG. 6B) is a transparent OLED in which light emitted from the organic light emitting layer (313 in FIG. 3) can be emitted toward both the first and second substrates 101 and 102. It is a panel.

Meanwhile, in the drawing, only three pixel regions P are shown, but for the sake of convenience, only three pixel regions P are shown and substantially hundreds to thousands of pixel regions are provided.

Next, as shown in FIG. 6C, a process of attaching the protective film 130 onto the insulating substrate 200 for bonding the first and second OLED panels 110 (FIG. 6A and 120 in FIG. 6B) is performed. Proceed.

That is, the first and second OLED panels (110 in FIG. 6A and 120 in FIG. 6B) of the present invention are bonded to each other by a predetermined distance from each other through the protective film 130.

Here, the protective film 130 includes a barium oxide (BaO) or calcium oxide (CaO) having a hydrophobic character or having hygroscopic properties therein.

In addition, a protective tape 130a for protecting the protective film 130 is attached to the other surface of the protective film 130 that is bonded to the insulating substrate 200, and the protective tape 130a is later attached to the first substrate (see FIG. 6A of FIG. 6A). 110 is removed in the step of bonding the insulating substrate 200 and.

Next, as shown in FIG. 6D, after removing the protective tape (130a of FIG. 6C) of the insulating substrate 200 to expose the protective film 130, the insulating substrate 200 is connected to the first substrate 101. After placing and aligning to face each other, as shown in FIG. 6E, the protective film 130 and the first buffer layer 110a formed on the first substrate 101 are pressed to be completely in contact with each other, and then the insulating substrate 200 is pressed. ), The protective film 130 is attached to the first substrate 101.

Next, as shown in FIG. 6F, the second OLED panel 120 is pressed so that the second buffer layer 120a is in close contact with the protective film 130.

As a result, as shown in FIG. 6G, the first OLED panel 101 and the second OLED panel 102 are completely bonded to form the stereoscopic OLED 100.

As described above, the stereoscopic OLED 100 of the present invention includes a first OLED panel 110 and a transparent second OLED panel 120 in one display device to implement different image information. A three-dimensional image with a sense of depth and realism is realized, and at the same time, the first and second OLED panels 110 and 120 are bonded to each other through the protective film 130 to realize a lightweight and thin stereoscopic OLED 100. have.

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

1 is a circuit diagram of one pixel of a typical active matrix OLED.

2 is a view schematically showing a cross-section of an OLED capable of stereoscopic image according to an embodiment of the present invention.

3 is an enlarged cross-sectional view of a portion of FIG. 2;

Figure 4 is a conceptual diagram briefly showing the principle that a three-dimensional stereoscopic image of a stereoscopic OLED according to an embodiment of the present invention is implemented.

5 is a view showing a motion parallax effect appearing in the three-dimensional OLED of the present invention.

6A-6G are cross-sectional views of manufacturing steps of an OLED according to an embodiment of the present invention.

Claims (9)

A first organic field panel comprising a first driving thin film transistor and a first organic light emitting diode, the first organic field panel implementing a first image; A second organic field panel through which the first image is transmitted and including a second driving thin film transistor and a second organic light emitting diode, the second organic field panel overlapping the first image to implement a second image; Protective film interposed between the first and second organic field panel Three-dimensional stereoscopic image organic light emitting device comprising a. The method of claim 1, The first and second organic light emitting diodes are three-dimensional stereoscopic image organic light emitting diodes comprising first and second electrodes and a light emitting layer, respectively. The method of claim 2, The first electrode of the second organic electroluminescent diode is made of one selected from a transparent conductive material including indium tin oxide (ITO) or indium zinc oxide (IZO). The first electrode is a three-dimensional stereoscopic image organic electroluminescent device comprising one selected from metal materials such as aluminum (Al), aluminum alloy (AlNd), magnesium (Mg), gold (Au), and silver (Ag). The method of claim 1, The protective film has a hydrophobicity, or comprises a hygroscopic material three-dimensional stereoscopic image organic electroluminescent device. The method of claim 4, wherein The hygroscopic material is barium oxide (BaO) or calcium oxide (CaO) three-dimensional stereoscopic image organic light emitting device. The method of claim 1, The first and second organic EL panels are encapsulated through a buffer layer, and the 3D stereoscopic organic light emitting diodes are encapsulated. The method of claim 6, The buffer layer may be formed of an inorganic insulating material including silicon nitride (SiNx), silicon oxide (Si0 ₂ ) or alumina (Al ₂ O ₃ ), and polyacrylate, polyimide, polyamide, or benzo. A three-dimensional stereoscopic image organic light emitting device comprising a plurality of layers of organic insulating materials including cyclobutene (BCB) alternately stacked. The method of claim 2, The driving thin film transistor includes a semiconductor layer, a gate electrode, a drain, and a source electrode. The method of claim 8, And the first electrode is electrically connected to the drain electrode.

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