KR102094143B1 - Fabricating Method Of Organic Light Emitting Diode Display - Google Patents

Abstract

The organic light emitting diode device according to an embodiment of the present invention uses a laser instead of a mask process in an encapsulation step, and has an effect of reducing costs required for manufacturing and maintaining mask equipment. In addition, by not simplifying the process of the mask, it has the effect of greatly increasing productivity by simplifying the process, and removes defects such as penetration film formation, foreign matter generation, arc generation, static electricity generation, and film property changes caused by the mask, thereby yielding It has the effect of significantly increasing.

Description

Manufacturing Method of Organic Light Emitting Diode Display Device {Fabricating Method Of Organic Light Emitting Diode Display}

The present invention relates to a method of manufacturing an organic light emitting diode display device.

With the development of the information society, the demand for display devices for displaying images is increasing in various forms, and in recent years, liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light-emitting. Various flat display devices, such as an organic light emiiting diode display, are used.

The organic light emitting diode device of the organic light emitting diode display device is injected by injecting each electron and hole from the electron injection electrode (cathode) and the hole (hole) injection electrode (anode) into the light emitting layer, and injected It is a device that emits light when an exciton in which electrons and holes are combined falls from an excited state to a ground state. Due to this principle, unlike a conventional liquid crystal display (LCD), since there is no need for a separate light source, there is an advantage of reducing the volume and weight of the device. In addition, the organic light emitting diode device has a high luminance and a low operating voltage characteristic, and since it is a self-emission type that emits light by itself, a contrast ratio is large, an ultra-thin display can be implemented, and a response time is several microseconds ( Iv) It is recently attracting attention as a flat panel display device because it is easy to implement moving images, has no limitation of viewing angle, is stable at low temperatures, and is easy to manufacture and design of a driving circuit because it is driven with a low voltage of 5 to 15 V DC.

Such an organic light emitting diode display device is very vulnerable to moisture and oxygen in air. Therefore, in the manufacturing process of the organic light emitting diode display device, an encapsulation process is required to seal the organic light emitting diode element so that moisture and oxygen do not penetrate.

As the sealing technology, edge sealing technology including UV sealing (Ultra violet sealing) method and frit sealing method, and face sealing technology are known. In the UV sealing method, a UV seal is applied on the lower substrate on which the organic light emitting diode device is formed, and then the lower substrate and the upper substrate are bonded. In addition, when UV is irradiated to the area where the UV seal is applied, the seal is cured and the upper substrate prevents the inflow of moisture and oxygen.

The frit sealing method, which is mainly used for small products, has the best sealing characteristics by sealing the substrate and the encapsulated substrate using a low temperature frit, but is limited in application to large substrates because it is weak against external impact.

Face sealing technology is a sealing method that is being developed to solve the external impact problem when applying large products. The face sealing technology is a method of filling the entire empty space between the encapsulation substrate and the organic light emitting diode substrate using an organic material. A face sealing film is mainly used as the filling organic material.

Filling organics, due to their properties, have the ability to block moisture and oxygen, resulting in pixel shrinkage. Therefore, in general, the face sealing technology protects the organic light emitting diode device from external shock or moisture and oxygen by passivating the organic light emitting diode device with an inorganic material before filling the organic material.

Hereinafter, the existing face sealing technology will be briefly described.

The face sealing technology is largely composed of a passivation step, a sealing step, and a scribing step. First, in the passivation step, a passivation layer is deposited by depositing an inorganic material through a physical vapor deposition (PVD) process, such as sputtering, or a PECVD (Plasma Enhanced Chemical Vapor Deposition) process, on a mother glass on which an organic light emitting diode device is formed. To form.

At this time, the passivation layer is formed to sufficiently cover the effective display area AA including the organic light emitting diode device. However, the passivation layer should not be formed in the formation region of the pad portion to which the driver IC (IntegratedCircuit) or FPC (Flexible Printed Circuit) will be contacted, that is, the pad region PA. To this end, when forming the passivation layer, a mask for preventing the passivation layer from being deposited on the pad area PA is essential.

In the sealing step, the passivation layer and the sealing substrate are filled with an organic face sealing film and sealed.

Then, in the scribing step, the mother substrate and the encapsulation substrate are cut in units of panels to be individualized.

However, in the aforementioned conventional face sealing technology, many problems are caused by a mask that is inevitably applied for selective deposition of a passivation layer.

Examples include poor film formation due to excitation of the mask or misalignment of the mask, deterioration of film quality due to foreign matter induction of the mask, arc generation in the process chamber due to the mask, and deposition film characteristics due to the mask material There are changes, such as causing static electricity by the mask.

The above problems caused by the mask are factors that significantly reduce the yield. In addition, since the mask requires an expensive fine align system, it requires an additional cost to manufacture and maintain expensive equipment, and increases tact time and productivity due to the fine alignment process. Is accompanied.

The present invention is to solve the above problems, and an object of the present invention is to provide a method of manufacturing an organic light emitting diode display device to increase yield and reduce manufacturing cost and manufacturing process time.

In order to solve the above problems, the present invention comprises the steps of preparing a substrate in which a display area and a pad area are defined; Sequentially forming driving and switching transistors, banks, and organic light emitting diodes in the display area on the substrate; Forming a gate pad part and a data pad part in the pad area; Forming a laser absorbing layer on the gate pad portion and the data pad portion; Forming a contact hole exposing the gate pad portion and the data pad portion on the laser absorption layer; Forming a sacrificial layer covering the contact hole; Forming a first encapsulation layer over the substrate, covering the sacrificial layer and the organic light emitting diode; It provides a method of manufacturing an organic light emitting diode display device comprising the step of etching the first encapsulation layer and the sacrificial layer of the pad area with a laser.

The laser absorbing layer and the contact hole are characterized in that they are formed in the same process as the bank, and the laser absorbing layer is formed of an organic material or an inorganic material.

The step of forming the sacrificial layer includes forming a thickness of 100 μm to 10 μm using ITO (Indium-tin-oxide) by a laser transfer method, and the sacrificial layer is formed between the laser absorbing layers. It is characterized by being formed to overlap with the gate pad portion and the data pad portion.

The forming of the sacrificial layer may include forming a thickness of 100 µm to 10 μm with a material such as ITO by a laser transfer method on the pad region where the gate pad portion and the data pad portion are formed. A layer is formed on the front surface of the substrate in the pad region, covering the laser absorption layer, the gate pad portion, and the data pad portion.

The forming of the first encapsulation layer is characterized in that it is formed by a PVD process such as sputtering or a PECVD process as an inorganic material.

In the etching of the first encapsulation layer, the sacrificial layer corresponding to the gate pad part and the data pad part and the first encapsulation layer are etched.

In the etching of the first encapsulation layer, the sacrificial layer and the first encapsulation layer are etched to the front surface of the substrate in the pad region, and the substrate has the gate pad portion, the data pad portion, and the contact hole. It characterized in that the laser absorption layer remains.

The first encapsulation layer includes a second encapsulation layer formed of an organic material and a third encapsulation layer formed of an inorganic material.

As described above, according to the present invention, the organic light emitting diode display device uses a laser instead of a mask process in the passivation step, and has an effect of reducing the cost of manufacturing and maintaining the mask equipment.

In addition, the masking process is not carried out, which has the effect of greatly increasing productivity by simplifying the process.

By removing defects such as penetration film formation, foreign matter generation, arc generation, static electricity generation, and film property changes caused by the mask, it has an effect of significantly increasing the yield.

1 is a cross-sectional view showing an organic light emitting diode display device according to an exemplary embodiment of the present invention.
2A to 2E are cross-sectional views illustrating a process sequence for a pad portion of an organic light emitting diode display device according to an embodiment of the present invention.
3A to 3E are cross-sectional views illustrating a process sequence of a pad portion of an organic light emitting diode display device according to another embodiment of the present invention.
4A is a pad portion of an organic light emitting diode display device according to an exemplary embodiment of the present invention, and FIGS. 4B and 4C are pictures showing damage to the pad portion by a conventional laser.

Hereinafter, an organic light emitting diode display device according to the present invention will be described with reference to the accompanying drawings.

As shown in FIG. 1, the organic light emitting diode display 101 includes a display area AA for displaying an image with light generated by the organic light emitting diode E, a driver IC (Integrated Circuit) or FPC (Flexible Printed). Circuit) includes a pad area PA in which a pad portion to be contacted is formed.

Looking at this in more detail, a semiconductor layer 113 is formed in the display area AA on the substrate 110. The semiconductor layer 113 is made of silicon, and its central portion is an active region 113a forming a channel and an active region ( 113a) is composed of source and drain regions 113b and 113c doped with high concentrations of impurities on both sides.

A gate insulating layer 116 is formed on the semiconductor layer 113.

A gate electrode 120 and a gate wiring (not shown) extending in one direction are formed on the gate insulating layer 116 corresponding to the active region 113a of the semiconductor layer 113 but not shown in the drawing.

An interlayer insulating layer 123 is formed on the front surface of the gate electrode 120 and the gate wiring (not shown).

A contact hole 125 exposing the source and drain regions 113b and 113c located on both sides of the active region 113a is provided in the interlayer insulating layer 123 and the gate insulating layer 116 below the interlayer insulating layer 123.

The source and drain electrodes 133 and 136 spaced apart from each other and contacting the source and drain regions 113b and 113c exposed through the contact hole 125 are disposed above the interlayer insulating layer 123 including the contact hole 125. Is formed.

In addition, a first protective layer 140 having a drain contact hole 143 exposing the drain electrode 136 is formed on the interlayer insulating layer 123 exposed between the source and drain electrodes 133 and 136.

At this time, the semiconductor layer 113 including the source and drain electrodes 133 and 136 and the source and drain regions 113b and 113c connected to these electrodes, respectively, and a gate insulating film 116 formed on the semiconductor layer 113 ) And the gate electrode 120 form a driving thin film transistor DTr.

On the other hand, although not shown, a data wiring (not shown) defining a pixel area is formed on the substrate 110 by crossing the gate wiring (not shown). The switching thin film transistor (not shown) has the same structure as the driving thin film transistor DTr, and is connected to the driving thin film transistor DTr. In addition, a power supply wiring (not shown) is formed in the same layer as the gate wiring (not shown), and the power supply wiring (not shown) is connected to one electrode of the driving thin film transistor DTr.

Subsequently, in the region connected to the drain electrode 136 of the driving thin film transistor DTr and substantially displaying an image on the first protective layer 140, for example, the organic light emitting diode E is made of a material having a relatively high work function value. ), A first electrode 147 forming an anode is formed as one component.

The first electrode 147 has a double layer structure, and the upper layer serves as the anode electrode 147b, and the lower layer is formed to serve as the reflector 147a.

That is, the upper layer of the first electrode 147 is made of a transparent conductive material having a relatively high work function value, such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) so as to serve as the anode electrode 147b. It is made, the lower layer of the first electrode 147, the reflective plate 147a is made of a metal material having excellent reflection efficiency, for example, aluminum (Al) or silver (Ag), the organic formed on the first electrode 147 The light emitted from the light emitting layer 155 is reflected to the upper portion to be recycled, thereby improving light emission efficiency.

The first electrode 147 is formed for each pixel region, and a bank 150 is formed between the first electrode 147 formed for each pixel region.

At this time, the bank 150 may be made of any one of general transparent organic insulating materials, for example, polyimide, photo acryl, benzocyclobutene (BCB), or a material that exhibits black. For example, it may be made of black resin.

In addition, an organic emission layer 155 is formed on the first electrode 147.

Here, the organic light emitting layer 155 may be composed of a single layer made of a luminescent material, a hole injection layer, a hole transport layer, an emitting material layer, and electrons to increase luminous efficiency It may be composed of multiple layers of an electron transport layer and an electron injection layer.

The organic light emitting layer 155 expresses red, green, and blue colors. As a general method, a separate organic material emitting red, green, and blue light is used for each pixel area.

In addition, a second electrode 158 forming a cathode is formed on the entire surface of the display area AA as an upper portion of the organic emission layer 155.

The second electrode 158 is a metal material having a relatively low work function value, for example, aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au), or aluminum magnesium alloy (AlMg) It can be made of any one or more materials. At this time, the second electrode 158 is formed to have a very thin thickness to transmit light emitted from the organic light emitting layer 155.

Subsequently, a first encapsulation layer 160 for encapsulation is formed on the entire surface of the display area AA of the substrate 110 on which the organic light emitting diode E is formed.

The first encapsulation layer 160 may be formed of an inorganic material such as a PVD process such as sputtering or a PECVD process.

In this case, the first encapsulation layer 160 may further include a second encapsulation layer (not shown) using an organic material and a third encapsulation layer (not shown) using an inorganic material using a face sealing technique.

Here, the face sealing technology is an encapsulation method for solving an external impact problem, and the face sealing technology is a method of filling the entire empty space on the organic light emitting diode substrate 101 using an organic material. At this time, since the organic material has the ability to block moisture and oxygen due to its characteristics, and may cause shrinkage of the substrate, the first encapsulation layer 160 is formed of the inorganic material and the second encapsulation layer ( And a third encapsulation layer (not shown) made of inorganic material to protect the organic light emitting diode (E) from external impact, moisture, and oxygen.

In addition, a gate insulating layer 116 is formed on the pad region PA on the substrate 110 and an interlayer insulating layer 123 is formed on the gate insulating layer 116.

A gate pad portion 163 and a data pad portion 183 are formed on the interlayer insulating layer 123. At this time, although not shown, the gate pad unit 163 is connected to the gate wiring (not shown), and the data pad unit 183 is connected to the data wiring (not shown) to transmit an image and a control signal to each wire.

Here, the gate pad portion and the data pad portions 163 and 183 may be formed in the manufacturing process of the array including the driving thin film transistor (DTr in FIG. 1).

Further, a laser absorbing layer 162 is formed on the substrate 110 of the pad area PA including the gate pad part 163 and the data pad part 183. The laser absorption layer 162 may be formed of the same organic material as the bank 150 in the same process as the bank 150 of the display area AA is formed, or, after the bank 150 is formed, an inorganic material It can be formed by PVD process such as furnace sputtering or PECVD process.

At this time, the first contact hole exposing the gate pad portion and the data pad portions 163 and 183 to the laser absorbing layer 162 formed on the gate pad portion and the data pad portions 163 and 183 of the pad area PA, respectively. (163a, see Fig. 2b), a second contact hole (183a, see Fig. 2b) is provided.

Hereinafter, a method of manufacturing the organic light emitting diode display device of the present invention having the above-described structure will be described. At this time, the characteristic part of the present invention is in the pad area PA, and its manufacturing method will be described.

2A to 2E are cross-sectional views of manufacturing steps for a pad region of an organic light emitting diode display device according to an exemplary embodiment of the present invention. At this time, the same reference numerals are given to the same components as in FIG. 1, and steps for manufacturing the display region are omitted for convenience of description in manufacturing the pad region.

First, as illustrated in FIG. 2A, a gate insulating layer 116 and an interlayer insulating layer 123 are formed on the substrate 110 of the pad area PA, and a gate pad unit and a data pad are formed on the interlayer insulating layer 123. Parts 163 and 183 are formed.

At this time, the gate pad portion and the data pad portions 163 and 183 may be formed in the manufacturing process of the array including the driving thin film transistor (DTr in FIG. 1).

Subsequently, as illustrated in FIG. 2B, a laser absorbing layer 162 is formed on the substrate 110 on which the gate pad portion and the data pad portions 163 and 183 are formed. As described above with reference to FIG. 1, the laser absorbing layer 162 may be formed of a transparent organic material in a process in which the bank (150 of FIG. 1) is formed.

Alternatively, after the bank (150 in FIG. 1) is formed, it may be formed by a PVD process such as sputtering with an inorganic material or a PECVD process.

However, when the laser absorbing layer 162 is formed after the bank (150 in FIG. 1) is formed, the steps of the process increase, so that the laser absorbing layer 162 is made of the same material in the same process as the bank (150 in FIG. 1). It would be desirable to form.

Meanwhile, after the laser absorbing layer 162 is formed, first contact holes and second contact holes 163a and 183a exposing the gate pad portion and the data pad portions 163 and 183 are formed. Here, each contact hole 163a, 183a may be preferably formed in the same process as the process of forming the bank (150 in FIG. 1).

Subsequently, as illustrated in FIG. 2C, a sacrificial layer 167 is formed on the gate pad portion and the data pad portions 163 and 183 exposed through the first and second contact holes 163a and 183a.

At this time, the sacrificial layer 167 is a laser transfer method prior to the passivation step of forming a first encapsulation layer (160 in FIG. 1) for encapsulation of the organic light emitting diode device (101 in FIG. 1). It is formed corresponding to each contact hole 163a, 183a of each pad portion 163, 183.

Here, the sacrificial layer 167 is a material having good etching characteristics (laser ablation) by indium-tin-oxide (ITO) or laser, and may be formed to a thickness of 100 mm 2 to 10 μm. At this time, the sacrificial layer 167 is formed by overlapping each pad portion 163 and 183 between the laser absorbing layers 162 separated through the contact holes 163a and 183a.

By forming the sacrificial layer 167, each pad portion 163, 183 exposed through each contact hole 163a, 183a is generated by a laser in an etching process by a laser, which will be described later. , 183) can be secured (see FIGS. 4B and 4C).

Subsequently, as illustrated in FIG. 2D, the first encapsulation layer 160 is formed on the entire surface of the substrate 110 of the pad region PA in which the sacrificial layer 167 is formed.

At this time, the first encapsulation layer 160 is also formed on the front surface of the substrate 110 of the display area (PA of FIG. 1), and the organic light emitting diode display device (101 of FIG. 1) is encapsulated.

Here, instead of performing a separate mask process as in the prior art, the passivation step for encapsulation of the organic light emitting diode display (101 in FIG. 1) is performed, so that conventional problems caused by the mask can be eliminated at once. do.

Subsequently, as illustrated in FIG. 2E, a laser ablation process is performed on the first encapsulation layer 160 corresponding to the sacrificial layer 167 to perform the gate pad section and the data pad sections 163 and 183. The first contact hole and the second contact hole 163a and 183a to be exposed are formed.

At this time, the laser may be one of Ar2, Kr2, Xe2, ArF, KrF, XeCl, and F2 excimer laser.

If the laser etching process is performed without forming the sacrificial layer 167 in the above-described process, damage may occur in each of the pad portions 163 and 183 of the pad area PA as shown in FIGS. 4B and 4C. do.

On the other hand, when the sacrificial layer 167 is formed and an etching process is performed by a laser, each pad portion 163 and 183 of the pad area PA is formed without any damage as shown in FIG. 4A.

The organic light emitting diode display device according to the above-described embodiment of the present invention uses a laser instead of a mask process in the passivation step, and has an effect of reducing the cost of manufacturing and maintaining the mask equipment. In addition, by not simplifying the mask process, it has the effect of greatly increasing productivity by simplifying the process, and removes defects such as penetration film formation, foreign matter generation, arc generation, static electricity generation, and film property changes caused by the mask to improve yield. It has an effect that can be greatly increased.

Hereinafter, another embodiment of the present invention will be described with reference to FIGS. 3A to 3E. At this time, the characteristic part of the present invention is in the pad area PA, and its manufacturing method will be described.

3A to 3E are cross-sectional views of manufacturing steps for a pad region of an organic light emitting diode display device according to another exemplary embodiment of the present invention. At this time, in the manufacturing of the pad area, steps for manufacturing the display area are omitted for convenience of description.

First, as illustrated in FIG. 3A, a gate insulating layer 216 and an interlayer insulating layer 223 are formed on the substrate 210 of the pad area PA, and a gate pad portion and a data pad are formed on the interlayer insulating layer 223. Parts 263 and 283 are formed.

At this time, the gate pad portion and the data pad portions 263 and 283 may be formed in the manufacturing process of the array including the driving thin film transistor (DTr in FIG. 1).

Subsequently, as shown in FIG. 2B, a laser absorbing layer 262 is formed on the substrate 210 on which the gate pad portion and the data pad portions 263 and 283 are formed.

As described above with reference to FIG. 1, the laser absorbing layer 262 may be formed of a transparent organic material in a process in which the bank (150 of FIG. 1) is formed.

Alternatively, after the bank (150 in FIG. 1) is formed, it may be formed by a PVD process such as sputtering with an inorganic material or a PECVD process.

However, when the laser absorbing layer 262 is formed after the bank (150 in FIG. 1) is formed, the steps of the process are increased, so that the laser absorbing layer 262 is made of the same material in the same process as the bank (150 in FIG. 1). It would be desirable to form.

Meanwhile, after the laser absorbing layer 262 is formed, first contact holes and second contact holes 263a and 283a exposing the gate pad portion and the data pad portions 263 and 283 are formed.

Subsequently, as shown in FIG. 3C, a sacrificial layer 267 is formed on the entire surface of the substrate 210 of the pad region PA in which the laser absorption layer 262 is formed.

At this time, the sacrificial layer 267 is a laser transfer method prior to the passivation step of forming a first encapsulation layer (160 in FIG. 1) for encapsulation of the organic light emitting diode display (101 in FIG. 1). As a result, it is formed on the entire surface of the substrate 220 of the pad area PA. In other words, the sacrificial layer 267 is formed while covering the laser absorbing layer 262 and the respective pad portions 263 and 283.

Here, the sacrificial layer 267 may be formed of indium-tin-oxide (ITO) or a material having good etching properties by laser (Laser ablation) to a thickness of 100 mm 2 to 10 μm.

By forming such a sacrificial layer 267, damage to each pad portion 263, 283 generated by the laser in the etching process by the laser, where each pad portion 263, 283 is described later (see FIGS. 4B and 4C). To complement.

Subsequently, as illustrated in FIG. 3D, the first encapsulation layer 260 is formed on the entire surface of the substrate 210 of the pad region PA in which the sacrificial layer 267 is formed.

At this time, the first encapsulation layer 260 is the same as the first encapsulation layer 160 for the encapsulation described above in FIG. 1.

Here, instead of performing a separate mask process as in the prior art, a passivation step for encapsulation of the organic light emitting diode display (101 in FIG. 1) is performed, so that conventional problems due to the mask can be eliminated at once. do.

Subsequently, as illustrated in FIG. 3E, a first ablation of the sacrificial layer 267 and the pad region PA corresponding to the sacrificial layer 267 is performed by performing laser ablation on the sacrificial layer 267. The layer 260 is removed, and first and second contact holes 263a and 283a exposing the gate pad portion and the data pad portions 263 and 283 are formed.

At this time, the laser may be one of Ar2, Kr2, Xe2, ArF, KrF, XeCl, and F2 excimer laser.

The organic light emitting diode display device according to another embodiment of the present invention described above uses a laser instead of a mask process in a passivation step, and has an effect of reducing the cost of manufacturing and maintaining the mask equipment. In addition, by not simplifying the mask process, it has the effect of greatly increasing productivity by simplifying the process, and removes defects such as penetration film formation, foreign matter generation, arc generation, static electricity generation, and film property changes caused by the mask to improve yield. It has an effect that can be greatly increased.

101: organic light emitting diode display 110: substrate
113: semiconductor layer 113a: active region
113b: source region 113c: drain region
116: gate insulating film 120: gate electrode
123: interlayer insulating film 125: semiconductor layer contact hole
113: source electrode 136: drain electrode
140: protective layer 143: drain contact hole
147: first electrode 147a: reflector
147b: anode electrode 155: organic light emitting layer
158: second electrode 160: first encapsulation layer
162: laser absorption layer 163: gate pad portion
183: Data pad portion AA: display area
PA: Pad area

Claims (12)

Preparing a substrate in which a display area and a pad area are defined;
Sequentially forming driving and switching transistors, banks, and organic light emitting diodes in the display area on the substrate;
Forming a gate pad part and a data pad part in the pad area;
Forming a laser absorbing layer on the gate pad portion and the data pad portion;
Forming a contact hole exposing the gate pad portion and the data pad portion on the laser absorption layer;
Forming a sacrificial layer covering the contact hole;
Forming a first encapsulation layer over the substrate, covering the sacrificial layer and the organic light emitting diode;
And etching the first encapsulation layer and the sacrificial layer in the pad area with a laser,
The forming of the sacrificial layer is a method of manufacturing an organic light emitting diode display device characterized in that the gate pad portion and the data pad portion are formed of a material such as ITO by a laser transfer method in the pad region.
According to claim 1,
The manufacturing method of the organic light emitting diode display device, characterized in that the laser absorption layer and the contact hole are formed in the same process as the bank.
According to claim 2,
The method of manufacturing an organic light emitting diode display device, characterized in that the laser absorption layer is formed of an organic material or an inorganic material.
delete delete According to claim 1,
The sacrificial layer is a method of manufacturing an organic light emitting diode display device formed to a thickness of 100Å to 10μm.
According to claim 1,
The sacrificial layer is a method of manufacturing an organic light emitting diode display device, characterized in that formed on the entire surface of the substrate in the pad region, covering the laser absorption layer, the gate pad portion and the data pad portion.
According to claim 1,
The forming of the first encapsulation layer may include:
A method of manufacturing an organic light emitting diode display device, characterized in that it is formed by a PVD process such as sputtering or a PECVD process as an inorganic material.
According to claim 1,
Etching the first encapsulation layer,
A method of manufacturing an organic light emitting diode display device, characterized in that the sacrificial layer and the first encapsulation layer corresponding to the gate pad part and the data pad part are etched.
According to claim 1,
Etching the first encapsulation layer,
The sacrificial layer and the first encapsulation layer are etched to the front surface of the substrate in the pad region, and the laser absorption layer having the gate pad portion, the data pad portion, and the contact hole remains on the substrate. Method for manufacturing a diode display device.
The method of claim 8,
The first encapsulation layer is a method of manufacturing an organic light emitting diode display device including a second encapsulation layer formed of an organic material and a third encapsulation layer formed of an inorganic material. According to claim 1,
The laser is one of Ar2, Kr2, Xe2, ArF, KrF, XeCl, F2 excimer laser manufacturing method of an organic light emitting diode display.

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