KR20210085237A - Organic light emitting diode display and manufacturing method of the same - Google Patents

Abstract

According to one embodiment of the present invention, provided is an organic light emitting display device including a driving element and a substrate supporting a light emitting element controlled by the driving element. The substrate is made of a material which can be folded or bent, and the substrate has a structure including a first substrate and a second substrate. A functional layer is included between the first substrate and the second substrate. The width of the first substrate is equal to or greater than the width of the second substrate and the functional layer. The width of the second substrate is configured to be equal to or smaller than that of the functional layer, so that when an external force such as folding or bending of the substrate is generated, a peeling phenomenon occurring from the side of the substrate can be minimized.

Description

Organic light emitting display device and manufacturing method thereof {ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD OF THE SAME}

The present invention relates to an organic light emitting display device and a method for manufacturing the same, and more particularly, to an organic light emitting display device using a flexible substrate, which can minimize defects that may occur in a flexible environment, and manufacturing the same to provide a way

Recently, as society enters the information age in earnest, interest in information displays that process and display a large amount of information is on the rise, and as the demand for using portable information media increases, various lightweight and thin flat panel display devices have been developed and are in the spotlight.

Among various flat panel display devices, organic light emitting diodes (OLEDs) are display devices that use self-luminous devices as display devices, and are required for liquid crystal display devices (LCDs), which are non-light emitting devices. Because it does not require a backlight (Back Light), it is possible to be lightweight and thin.

In addition, the viewing angle and contrast ratio are excellent compared to the liquid crystal display device, and it is advantageous in terms of power consumption, direct current low voltage driving is possible, the response speed is fast, and the internal component is solid, so it is strong against external shock, and the temperature range is wide. It has advantages.

In particular, since OLED is formed using an organic thin film, interest is being focused on it as an optimal material that can be applied to a flexible display device using the flexibility and elasticity that are characteristics of an organic thin film.

In response to these advantages, curved, rollable, and foldable display devices are being actively developed in recent years, and research on organic light emitting display devices including OLEDs to implement such display devices Activities are being actively carried out.

In order to implement such an organic light emitting display device, a flexible material such as plastic or a metal foil is used as a substrate. In general, polyimide is widely used as a substrate of the organic light emitting display device.

On the other hand, such a polyimide (Polyimide) has heat resistance enough to withstand the manufacturing process of an organic light emitting display device, but has a disadvantage of large hygroscopicity. Polyimide with high hygroscopicity is used as a substrate for an organic light emitting display device with an OLED. In this case, the device performance of the switching and driving thin film transistors deteriorates, which in turn lowers the reliability of the OLED.

In order to minimize this, in an organic light emitting display device using polyimide as a substrate, a hydrophobic material may be included as an intermediate layer or a plasma-treated functional layer for blocking moisture permeation may be included.

In addition, a dielectric layer may be added as an intermediate layer in the middle of the polyimide substrate because the substrate made of a plastic-based material such as polyimide may cause a phenomenon in which charges may be accumulated. However, when the dielectric layer is used as an intermediate layer, delamination may occur due to an external force such as bending or folding, which ultimately deteriorates the reliability of the flexible organic light emitting diode display.

In the case of using a flexible substrate as described above, a gap between the various functional layers described above is widened by bending stress in a substrate including a dielectric layer or a functional layer for various purposes such as moisture permeation prevention. Accordingly, the inventors of the present invention have invented an organic light emitting display device capable of minimizing delamination between layers in a substrate including the above-described functional layer even in an environment in which stress due to an external force occurs, and a method for manufacturing the same.

A problem to be solved according to an embodiment of the present invention is to solve the above problems, and includes a functional layer for preventing deterioration of device performance of a thin film transistor of an organic light emitting display using polyimide as a substrate. An object of the present invention is to provide an organic light emitting display device capable of minimizing the delamination between layers of the substrate and a method for manufacturing the same.

An object to be solved according to an embodiment of the present invention is an organic light emitting display device using polyimide as a substrate, the substrate including a functional layer for minimizing the effects of static electricity and charge accumulation, the substrate An object of the present invention is to provide an organic light emitting display device capable of minimizing the delamination between layers and a method for manufacturing the same.

The problems to be solved according to an embodiment of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

An organic light emitting display device including a driving device and a substrate supporting a light emitting device controlled by the driving device according to an embodiment of the present invention is provided. The substrate is made of a material that can be folded or bent, and the substrate has a structure including a first substrate and a second substrate. A functional layer is included between a first substrate and a second substrate, wherein the width of the first substrate is equal to or greater than the width of the second substrate and the functional layer, and the width of the second substrate is equal to or greater than the width of the functional layer. It is configured to be equal to or smaller than that of the substrate to minimize the peeling phenomenon occurring from the side of the substrate when an external force such as folding or bending of the substrate is generated.

A method of manufacturing an organic light emitting display device according to an embodiment of the present invention is provided. In the method of manufacturing an organic light emitting display device including a driving element and a light emitting element controlled by the driving element, a substrate includes a first substrate, a second substrate, and a functional layer. To manufacture this, a first substrate is disposed on a manufacturing substrate, and a functional layer is disposed on the first substrate. The first substrate may be disposed using a curable polyimide solution, and the functional layer may be disposed using a hydrophobic material or a dielectric material. Thereafter, a step of disposing a second substrate on the functional layer is performed. The second substrate may be disposed using substantially the same material as the first substrate. When the substrate is formed and disposed as described above, a light emitting device having a driving device and an organic light emitting layer is disposed on the second substrate. Then, after removing at least a portion of the second substrate to open the first substrate, the manufacturing substrate and the first substrate are separated. In the above-described manufacturing method, since the second substrate opens at least a portion of the first substrate, damage between various layers constituting the substrate can be minimized in the process of cutting the substrate using a laser, etc. It is possible to provide an organic light emitting display device that can be minimized.

According to an embodiment of the present invention, there is an effect of minimizing the delamination between the substrates by using a substrate including the first substrate and the second substrate having different sizes.

In addition, by using the method for manufacturing an organic light emitting display device having different substrates according to another embodiment of the present invention, the peeling phenomenon between the substrates is minimized, thereby improving the reliability of the organic light emitting display device.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the following description.

Since the content of the invention described in the problems to be solved above, the means for solving the problems, and the effects do not specify the essential characteristics of the claims, the scope of the claims is not limited by the matters described in the content of the invention.

1 is a schematic plan view of an organic light emitting diode display according to an exemplary embodiment of the present specification;
FIG. 2 is a schematic cross-sectional view taken along line II of FIG. 1 ;
Fig. 3 is a schematic cross-sectional view taken along the cutting line IIII of Fig. 1;
4A to 4C are schematic cross-sectional views for explaining a manufacturing method according to another embodiment of the present specification.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention belongs It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are exemplary, and thus the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless otherwise explicitly stated.

In interpreting the components, it is interpreted as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between the two parts unless 'directly' is used.

In the case of a description of a temporal relationship, for example, when a temporal relationship is described as 'after', 'following', 'after', 'before', etc., 'immediately' or 'directly' Unless ' is used, cases that are not continuous may be included.

Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be implemented independently of each other or may be implemented together in a related relationship. may be

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic plan view of an organic light emitting display device according to an exemplary embodiment of the present specification.

As shown, the organic light emitting diode display 100 is connected to a thin film transistor (DTr, see FIG. 2 ) and a thin film transistor (DTr, see FIG. 2 ) on a substrate 110 to drive a light emitting diode (E, FIG. 2 ). see) is formed. When the organic light emitting diode display 100 is a flexible display device or a foldable display device, a flexible material may be used for the substrate 100 , and may be a transparent flexible substrate.

In more detail, on the substrate 110 , an active area A/A in the center and a non-display area N/A are defined along the edges of the active area A/A, and the active area A/A is The area in which the light emitting diode E (refer to FIG. 2 ) is disposed, refers to an area in which an image is substantially displayed, and may be referred to as a display area.

In the active region A/A, a plurality of gate lines GL and data lines DL intersect each other to define a plurality of pixel regions P, and each pixel region P has a light emitting diode E, FIG. 2) connected to a thin film transistor (DTr, see FIG. 2) is disposed, the thin film transistor (DTr, see FIG. 2) operates in association with a driving unit (not shown) located outside, and a light emitting diode (E, FIG. 2) reference) to control the amount of driving current provided to

Here, the non-display area N/A surrounding the edge of the active area A/A includes a pad part PAD in which the pad 130 is positioned at the upper end of the active area A/A, the pad ( 130 is connected to a circuit film (not shown) such as an FPCB, and functions as a contact terminal connecting the circuit film (not shown) and the wiring 131 to each other.

That is, a printed circuit board (not shown) connected through a circuit film (not shown) such as a flexible printed circuit board (FPCB) may be connected to the pad part PAD, and a thin film transistor (DTr) is formed on the printed circuit board (not shown). , a data driver and a gate driver that provide a driving signal to (see FIG. 2 ) may be mounted.

Alternatively, it may be disposed on a circuit film (not shown) in a manner such as chip-on-film (COF), tape-carrier-package (TCP), or the like, and may be connected to the pad part PAD of the substrate 110 .

A plurality of wires 131 are positioned between the pad 130 and the active area A/A, and the wires 131 transmit various electrical signals transmitted through the pad 130 to the active area A/A. It is transmitted to the arranged thin film transistor (DTr, see FIG. 2).

In addition, the ground wiring GND is disposed around the active region A/A, and a ground voltage applied from the outside is supplied to the ground wiring GND.

Here, the organic light emitting diode display 100 according to the embodiment of the present invention is characterized in that the functional layer 120 is further provided on the substrate 110 , and in particular, the functional layer 120 is larger than the width of the substrate 110 . Formed to have the same or smaller size, the substrate 110 is divided into a first region A including the functional layer 120 and a second region B not provided with the interlayer shielding layer 120 to be defined. can

In addition, the substrate 110 used in the organic light emitting display device 100 according to the embodiment of the present invention may be formed of at least one layer, and the first region A and the second region B are A plurality of layers on the substrate 110 may be arranged in different sizes to open any one layer of the substrate 110 .

In the organic light emitting display device 100 according to the embodiment of the present invention, the substrate 110 may be made of multilayer polyimide, and polyimide substrates of different sizes are used, so that a plurality of substrates are cut in the process of cutting the substrate. It is possible to minimize the peeling phenomenon caused by micro-cracks that may occur on the side of the substrate 100 constituting the layer of.

In particular, since the substrate 110 further includes the functional layer 120 , the bonding force between the polyimide layer and the functional layer 120 constituting the substrate 110 in the process of forming a single display device by cutting the substrate 110 . It is possible to minimize the occurrence of micro-cracks that may cause a problem in the substrate 110, thereby allowing moisture and oxygen to penetrate into the interlayers of the substrate 110 supporting the organic light emitting display device 100 in a flexible environment. It is possible to minimize the delamination phenomenon between the layers of the substrate 110 by an external force that can be applied to the substrate 110 . Accordingly, it is possible to prevent the reliability and lifetime of the organic light emitting diode display 100 from being deteriorated.

This will be described in more detail with reference to FIG. 2 .

FIG. 2 is a schematic cross-sectional view taken along line I-I of FIG. 1 .

Prior to the description, the organic light emitting display device 100 according to an embodiment of the present invention is divided into a top emission type and a bottom emission type according to the transmission direction of the emitted light. Hereinafter, the present specification Here, the top light emission method will be described as an example.

As shown, an active area A/A and a non-display area N/A may be defined in the substrate 110, and the non-display area N/A is one side of the active area A/A. can be located in

A plurality of pixel areas P are disposed in the active area A/A to display an image in the organic light emitting diode display 100 , and the non-display area N/A is other than the active area A/A. As a region of , various circuits, wirings, etc. for driving the pixel region P are disposed.

Here, for convenience of explanation, a region in which the thin film transistor DTr of each pixel region P of the active region A/A is positioned is defined as a region in which the switching region TrA and the storage capacitors C1, C2, and C3 are positioned. An area is defined as a storage area StgA, and an area in which the pad 130 of the non-display area N/A is located is divided into a pad area (PAD, see FIG. 3) to define the area.

The multi-buffer layer 102 is coated on the substrate 110, and the multi-buffer layer 102 is a buffer layer in which a plurality of thin films are sequentially stacked, for example, silicon nitride (SiNx) and silicon oxide (SiOx). These may be alternately stacked. Alternatively, an organic film and an inorganic film may be repeatedly laminated alternately.

The multi-buffer layer 102 serves to delay diffusion of moisture and/or oxygen penetrating into the substrate 110 .

The active buffer layer 103 may be further positioned on the multi-buffer layer 102 , and the active buffer layer 103 is for protecting the active layer 105 of the thin film transistor DTr, and is introduced from the substrate 110 . It performs the function of blocking various kinds of faults. The active buffer layer 103 may be made of the same material as the multi-buffer layer 102 , and may be formed of amorphous silicon (a-Si) or the like.

A thin film transistor DTr is located in the switching region TrA above the active buffer layer 103. The thin film transistor DTr according to an embodiment of the present invention is a thin film transistor using a polysilicon material as the active layer 105 and is a low temperature LTPS thin film transistor using polysilicon (Low Temperature Poly-Silicon; LTPS) is used.

Polysilicon materials have high mobility, low energy consumption, and excellent reliability.

That is, the active layer 105 is disposed in the switching region TrA on the active buffer layer 103 . The active layer 105 of the LTPS thin film transistor (hereinafter referred to as thin film transistor, DTr) is a channel region 105a in which a channel is formed when the thin film transistor 105 is driven, and a source region 105b on both sides of the channel region 105a. and a drain region 105c.

The channel region 105a, the source region 105b, and the drain region 105c are defined by ion doping (impurity doping).

At this time, an active pattern 151 is formed in the storage region StgA, which, like the active layer 105, is made of amorphous silicon and is doped with impurities.

Then, the gate insulating layer 106 is disposed on the active layer 105 and the active pattern 151, the gate insulating layer 106 is composed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx), It may be composed of a multilayer made of silicon nitride (SiNx) and silicon oxide (SiOx).

The gate electrode 107 is positioned so as to overlap the channel region 105a of the active layer 105 on the gate insulating layer 106 corresponding to the switching region TrA. Although not shown in the drawing, the gate wiring extends in one direction. (GL in Fig. 1) is formed.

In addition, in the storage region StgA, the first metal pattern 153 is disposed on the gate insulating layer 106 to correspond to the active pattern 151 .

The gate electrode 107 and the gate wiring (GL in FIG. 1) and the first metal pattern 153 may be made of the same material, and the gate electrode 107 and the gate wiring (GL in FIG. 1) and the first metal pattern ( 153) may have a single-layer structure made of any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), and molybdenum (MoTi) having low resistance characteristics, or It may have a double-layer or triple-layer structure by being made of two or more.

Next, a first interlayer insulating layer 108 is disposed over the gate electrode 107 and the gate wiring (GL of FIG. 1 ) and the first metal pattern 153 . The first interlayer insulating layer 108 is formed of silicon nitride (SiNx). ), so that hydrogen contained in the first interlayer insulating film 108 made of silicon nitride (SiNx) diffuses into the active layer 105 during the hydrogenation process for stabilizing the active layer 105 . .

In addition, in the storage area StgA, the second metal pattern 155 is disposed on the first interlayer insulating layer 108 to correspond to the first metal pattern 153 . The second metal pattern 155 may be formed of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof, and a single layer. Or it may be a multi-layer structure.

A second interlayer insulating layer 109 is positioned on the first interlayer insulating layer 108 and the second metal pattern 155 . The second interlayer insulating layer 109 is formed on the entire surface of the substrate 101 , and is formed of silicon oxide (SiOx). ) can be made.

The gate insulating layer 106 and the first and second interlayer insulating layers 108 and 109 have first and second contact holes exposing the source region 105b and the drain region 105c of the active layer 105, respectively. 111a and 111b and a third contact hole 156 exposing a portion of the first metal pattern 153 of the storage area StgA are provided.

A source electrode 113 and a drain electrode 115 are disposed corresponding to the switching region TrA on the first and second interlayer insulating layers 108 and 109, and the source electrode 113 and the drain electrode 115 are The source region 105b and the active layer 105 respectively through the first and second contact holes 111a and 111b formed in the gate insulating layer 106 and the first and second interlayer insulating layers 108 and 109, respectively. It is connected to the drain region 105c.

The source electrode 113 and the drain electrode 115 also have the same low resistance characteristics as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum (MoTi), chromium (Cr) ), titanium (Ti), any one or two or more materials.

In addition, although not shown in the drawing, a data line (DL of FIG. 1 ) intersecting the gate line (GL of FIG. 1 ) and defining the pixel region P is also formed.

At this time, the active layer 105 including the source electrode 113 and the drain electrode 115 and the source and drain regions 105b and 105c in contact with the electrodes 113 and 115 and the active layer 105 are positioned on the upper portion of the active layer 105 . The gate insulating film 106 and the gate electrode 107 constitute a driving thin film transistor (DTr).

Meanwhile, although not shown in the drawings, a switching thin film transistor (not shown) is connected to the driving thin film transistor DTr, and the switching thin film transistor (not shown) has the same structure as the driving thin film transistor DTr.

In addition, the switching thin film transistor (not shown) and the driving thin film transistor (DTr) are shown as an example of a top gate type in which the active layer 105 is made of a polysilicon semiconductor layer in the drawing, but the active layer 105 is an oxide semiconductor layer. Alternatively, it may be provided as a bottom gate type made of pure and impurity amorphous silicon.

In addition, a bottom shield metal (104) may be positioned between the active buffer layer 103 and the multi-buffer layer 102 under the active layer 105, and the lower protective metal 104 is a molybdenum (Mo) material. can be formed using

The lower protective metal 104 serves to suppress variations in device characteristics such as the threshold voltage of the driving thin film transistor DTr from moisture introduced from the outside. Accordingly, the lower protective metal 104 can prevent the occurrence of stains, afterimages, etc. due to the luminance imbalance between the pixel regions P. As shown in FIG.

In addition, the lower protective metal 104 may minimize physical damage to the thin film transistor DTr in the process of forming the substrate 110 of the organic light emitting diode display 100 .

In this case, the lower protective metal 104 may be electrically connected to one of the source electrode 113 and the drain electrode 115 , and through this, the potential of the lower protective metal 104 is adjusted for the operation of the organic light emitting diode display 100 . It can be prevented from being changed during the process or from affecting the threshold voltage Vth of the thin film transistor DTr.

That is, if the lower protective metal 104 is in a floating state, the shift amount of the threshold voltage of the thin film transistors DTr positioned in each pixel region P may be varied, which is a visual defect caused by an unintended change in luminance. will cause

In the present invention, the lower protective metal 104 is connected to the drain electrode 115 as an example. When the lower protective metal 104 and the drain electrode 115 are connected to each other in this way, the lower protective metal 104 is ) and the drain electrode 115 to form an equipotential.

Therefore, if the voltage difference between the lower protective metal 104 and the drain electrode 115 is smaller than the voltage difference between the gate electrode 107 and the source electrode 113 of the thin film transistor DTr, the lower protective metal 104 is The influence on the threshold voltage of the thin film transistor (DTr) by the DTr can be minimized.

In addition, in the storage area StgA, a third metal pattern 157 is positioned on the second interlayer insulating layer 109 to correspond to the second metal pattern 155 , and the third metal pattern 157 is a gate It is connected to the first metal pattern 153 through the third contact hole 156 formed in the insulating layer 106 and the first and second interlayer insulating layers 108 and 109 .

Here, the first metal pattern 153 serves as the second electrode (or upper electrode) of the first storage capacitor C1 and simultaneously becomes the first electrode (or lower electrode) of the second storage capacitor C2, and also serves as the first electrode (or lower electrode) of the second storage capacitor C2. The second metal pattern 155 becomes the second electrode (or upper electrode) of the second storage capacitor C2 and the first electrode (or the lower electrode) of the third storage capacitor C3 .

That is, the active pattern 151 and the first metal pattern 153 and the gate insulating layer 106 positioned between the active pattern 151 and the first metal pattern 153 form the first storage capacitor C1, In addition, the first interlayer insulating layer 108 positioned between the first metal pattern 153 and the second metal pattern 155 and the first metal pattern 153 and the second metal pattern 155 is formed by the second storage capacitor C2 . ) is achieved. In addition, the second interlayer insulating layer 109 positioned between the second metal pattern 155 and the third metal pattern 157 and the second metal pattern 155 and the third metal pattern 157 is a third storage capacitor C3. ) is achieved.

In addition, the protective layer 117 having a drain contact hole 118 exposing the drain electrode 115 of the driving thin film transistor DTr over the source electrode 113 and the drain electrode 115 and the third metal pattern 157 . ) is located.

The protective layer 117 may be made of the same material as the gate insulating layer 106 or the first and second interlayer insulating layers 108 and 109 , or may be made of an organic insulating material for planarization of the substrate 101 . .

For example, the protective layer 117 may include acrylic resin (polyacrylates resin), epoxy resin (epoxy resin), phenolic resin (phenolicresin), polyamides resin (polyamides resin), polyimide-based resin (polyimides resin), unsaturated polyester It may be formed of at least one of unsaturated polyesters resin, poly-phenylenethers resin, polyphenylenesulfides resin, and benzocyclobutene, but is not limited thereto. . The protective layer 117 may be formed as a single layer or may be configured as a double or multiple layer.

The protective layer 117 may be formed to a thickness of 2 μm to 5 μm to sufficiently cover the step difference on the substrate 110 .

Meanwhile, the passivation layer 117 is applied to cover all of the active regions A/A, and it is preferable that the passivation layer 117 not cover all of the second interlayer insulating layer 109 positioned below.

This is because the protective layer 117, which may be made of an organic layer, is vulnerable to moisture and air introduced from the outside, so that the protective layer 117 is not exposed to the outside of the organic light emitting display device 100, so that moisture from the outside is prevented. and to prevent air from flowing into the organic light emitting display device 100 through the protective layer 117 made of an organic layer.

In addition, the dam 140 may be disposed outside the protective layer 117 , and the dam 140 is disposed to completely surround the active area A/A. The dam 140 has an organic protective film 123b of the protective film 123 for protecting the elements of the organic light emitting display 100 from externally penetrating particles (moisture or air). It functions to limit the position to be stably located within the inner area.

The dam 140 may be formed by stacking a protective layer 117 , a bank 119 , and/or a spacer 121 .

In addition, an anode electrode 211 connected to the drain electrode 115 of the driving thin film transistor DTr to form an anode of the light emitting diode E is positioned on the protective layer 117 .

The anode electrode 211 has a stacked structure of aluminum (Al) and titanium (Ti) (Ti/Al/Ti), a stacked structure of aluminum (Al) and ITO (ITO/Al/ITO), and an APC alloy (Ag/Pd/ Cu), and a metal material having a high reflectance such as an APC alloy and a stacked structure of ITO (ITO/APC/ITO).

The anode electrode 211 is positioned for each pixel region P, and a bank 119 is positioned between the anode electrodes 211 positioned for each pixel region P. That is, the anode electrode 211 has a structure separated for each pixel region P by using the bank 119 as a boundary for each pixel region P.

A spacer 121 may be disposed on the bank layer 119 . The spacer 121 is disposed to surround the bank layer 119 , and serves to protect the organic light emitting layer 213 of the light emitting diode E from external pressure. will do

The spacer 121 may be formed of the same resin composition as the bank layer 119 , and may be formed of a black spacer having a high light absorption rate to prevent color mixing of light emitted from each pixel region P.

In addition, the organic light emitting layer 213 is positioned on the anode electrode 211 . The organic light emitting layer 213 is a common layer commonly formed in the pixel regions P, and may be a white light emitting layer that emits white light.

In this case, the organic light emitting layer 213 may be formed in a tandem structure of two or more stacks. Each of the stacks may include a hole transporting layer, at least one light emitting layer, and an electron transporting layer. In addition, a charge generation layer may be formed between the stacks. The charge generation layer is formed on the n-type charge generation layer and the n-type charge generation layer adjacent to the lower stack and is located adjacent to the upper stack. A charge generating layer may be included.

The n-type charge generation layer injects electrons into the lower stack, and the p-type charge generation layer injects holes into the upper stack. The n-type charge generating layer may be an organic layer in which an alkali metal such as Li, Na, K, or Cs, or an alkaline earth metal such as Mg, Sr, Ba, or Ra is doped into an organic host material having electron transport ability, The p-type charge generating layer may be doped with a dopant in an organic host material having hole transport ability.

A cathode electrode 215 is positioned on the entire surface of the organic light emitting layer 213, and the cathode 215 may also be formed of a common layer formed in common in the pixel regions P, like the organic light emitting layer 213. and a transparent metal material (TCO, Transparent Conductive Material) such as ITO or IZO that can transmit light, or a semi-conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). It may be formed of a semitransmissive conductive material.

When the cathode electrode 215 is formed of a transflective metal material, light output efficiency may be increased by the micro cavity.

A capping layer may be further formed on the cathode electrode 215 .

In the light emitting diode E, when a predetermined voltage is applied to the anode electrode 211 and the cathode electrode 215 according to a selected signal, holes injected from the anode electrode 211 and electrons provided from the cathode electrode 215 are induced. It is transported to the emission layer 213 to form excitons, and when these excitons are transitioned from an excited state to a ground state, light is generated and emitted to the outside.

In this case, the emitted light passes through the transparent cathode 215 and goes out, and through this, the organic light emitting diode display 100 finally realizes an arbitrary image.

Then, a protective film 123 in the form of a thin film is placed on the driving thin film transistor DTr and the light emitting diode E, and then the protective film 123 and the substrate 110 are bonded to each other, thereby forming an organic light emitting display device. (100) is encapsulated.

Here, the protective film 123 is used by laminating at least two inorganic protective films 123a and 123c in order to prevent external oxygen and moisture from penetrating into the organic light emitting display device 100 . An organic protective film 123b for supplementing the impact resistance of the inorganic protective films 123a and 123c is preferably interposed between the inorganic protective films 123a and 123c.

Accordingly, the organic light emitting display device 100 may prevent moisture and oxygen from penetrating into the organic light emitting display device 100 from the outside.

In addition, in the organic light emitting display device 100 according to the embodiment of the present invention, a polarizing plate 160 for preventing a decrease in contrast due to external light may be positioned above the protective film 123 through which light is transmitted. That is, the organic light emitting diode display 100 increases contrast by locating the polarizing plate 160 that blocks external light incident from the outside in the transmission direction of the light emitted through the organic light emitting layer 213 in the driving mode for realizing an image. will improve

Here, the organic light emitting diode display 100 according to the embodiment of the present invention is formed of a thin film film so that the substrate 110 has flexibility, and includes the first and second substrates 110a and 110b, and the first and a functional layer 120 positioned between the second substrates 110a and 110b.

The first and second substrates 110a and 110b are made of polyimide. Polyimide (PI) is a polymer having a relatively low crystallinity or mostly an amorphous structure, and is easily synthesized to form a thin film. In addition to the advantage of not requiring a crosslinking group for curing, it has excellent heat and chemical resistance, excellent mechanical properties, electrical properties and dimensional stability due to transparency and a rigid chain structure.

However, these polyimides have high hygroscopicity with a water vapor transmission rate (WVTR) of several to several tens of g/m ^{2 /24hr.} It has a property that can be charged by the flow of static electricity and other currents.

Accordingly, when the first and second substrates 110a and 110b are formed of polyimide, a large amount of moisture (H ₂ O) is introduced from the outside through the substrate 110 . At this time _{, H + and OH- ions of H 2} O are diffused toward the switching and driving thin film transistor (not shown, DTr), and the diffused ions act as mobile charges to the switching and driving thin film transistor (not shown, DTr). ) has an effect on the driving of the threshold voltage and the like, and thus the device performance of the switching and driving thin film transistors (not shown, DTr) is deteriorated.

Here, both the multi-buffer layer 102 and the active buffer layer 103 have a WVTR of several X 10 g/m ² /24 hr, which is not effective in preventing the diffusion of H + and OH- ions of _{H 2 O.} The lower protective metal 104 is further formed under the transistor (not shown, DTr), more precisely, the lower part of the active layer 105 to block H+ and OH- ions of _{moisture and/or H 2 O.} .

However, since the lower protective metal 104 is formed by patterning only the lower portion of the active layer 105 as it is made of a metal material, in the region where the lower protective metal 104 is not present, H + and OH- ions of H _{2 O are} It accumulates and eventually causes deterioration of the switching and driving thin film transistors (not shown, DTr).

Accordingly, in the organic light emitting display device 100 according to the embodiment of the present invention, the substrate 110 is divided into first and second substrates 110a and 110b, and is formed between the first and second substrates 110a and 110b. The functional layer 120 is further formed.

The functional layer 120 is made of an inorganic insulating material such as silicon nitride (SiNx) and silicon oxide (SiOx), and has a WVTR smaller than that of polyimide forming the first and second thin film layers 110a and 110b (about 1/1000). Hereinafter) In addition, dielectric materials such as silicon nitride (SiNx) and silicon oxide (SiOx) are charged in the substrate 110 to minimize the influence on the driving of the thin film transistor (not shown, DTr).

The functional layer 120 may be disposed to have a width equal to or smaller than that of the first substrate 110a. As will be described later, when the organic light emitting diode display 100 is a foldable display device or a flexible display device, the functional layer 12 may be disposed to have a smaller size than the first substrate 110a according to a bending direction.

Also, the width of the second substrate 110b may be equal to or smaller than that of the functional layer 120 . The substrate 110 is made of a material that can be folded or bent, and a first substrate 110a, a second substrate 110b, and a functional layer 120 disposed between the first substrate 110a and the second substrate 110b. ), which is more prone to delamination than a substrate made of a material having rigidity, and the cutting process applied to the substrate 110 at the stage of manufacturing the display device is performed on the substrate 110 including these different materials. ), there is a possibility that microcracks may occur.

Thus, the width of the first substrate 110a is equal to or greater than the width of the second substrate 110b and the functional layer 120 (B), and the width of the second substrate 110b is the functional layer 120 . It is possible to minimize interlayer microcracks that may occur in various processes of constituting the organic light emitting display device 100 by disposing them to be equal to or smaller than the same.

In particular, the functional layer 120 may be composed of a charged single layer that blocks charges charged to the substrate 110 including an inorganic insulating material and a dielectric, and is a functional layer 120 for minimizing moisture permeation, and is hydrophobic. ) may be configured to contain a substance.

The second substrate 110b is configured to open both ends of the first substrate 110a (B), but the size between the substrates corresponding to both ends in the direction orthogonal to the direction in which the display device is bent is different to cause the display device It is possible to minimize the possible chain-type peeling phenomenon.

As will be described later, since the first substrate 110a is subjected to a cutting process by external force such as a laser in the step of configuring the display device, its end has a cut surface including an acute angle, but the above-described second substrate 110b is etched or the like. Since the size between the substrates is different using the process of the side end, the end of the side may be configured to have a cross section including an obtuse angle.

In addition, in the above-described configuration, the gap between the functional layer 120 and the substrate that can be opened due to the difference in size between the first substrate 110a and the second substrate 110b is a multi-layer arrangement disposed on the second substrate 110b. It is possible to further minimize the penetration of moisture into the gap of the substrate by covering it with a barrier layer composed of an inorganic insulating material such as a buffer layer.

In the illustrated region B, the size of components including the second substrate 110b is arranged to be smaller than that of the first substrate 110a, so that damage that may occur in the substrate cutting process due to the above-described external force can be minimized.

As such, it is possible to prevent moisture and oxygen from penetrating into the organic light emitting display device 100 by minimizing microcracks, thereby further improving the reliability of the organic light emitting display device 100 .

Looking at this in more detail, two or more organic light emitting display devices 100 are manufactured together using a large substrate in order to improve the process yield when manufacturing the organic light emitting display device 100 , and then two or more organic light emitting display devices are manufactured. It will include the process of separating the devices 100 individually.

Here, in the process of individually separating the two or more organic light emitting display devices 100 manufactured together on a large substrate, it is common to use a cutting means such as a cutting knife and a cutting laser, that is, two or more organic light emitting devices using the cutting means. By removing the scribing region that is a spaced portion between the display devices 100 , two or more organic light emitting display devices 100 are separated from each other.

In this case, the organic light emitting diode display 100 is formed between the first and second thin substrates 110a and 110b made of polyimide so that the substrate 110 has flexibility, and inorganic insulation is used to block the inflow of moisture and oxygen from the outside. By allowing the functional layer 120 made of a material to be additionally positioned, the first substrate 110a, the functional layer 120, and the second substrate 110b are sequentially stacked and positioned.

The substrate 110 has different mechanical properties between the first and second substrates 110a and 110b and the functional layer 120 as well as between the first and second substrates 110a and 110b and the functional layer 120 . The interfacial adhesion is weak.

Accordingly, in the process of individually separating the organic light emitting diode display 100 through the cutting means, a peeling phenomenon occurs between the first and second substrates 110a and 110b and the functional layer 120 that are different from each other in the scribing area. Microcracks may occur.

As described above, the generated peeling phenomenon of the substrate 110 acts as a crack, and the crack gradually propagates to the active area A/A. And, the crack propagated to the active region A/A serves as a penetration path for oxygen and moisture, thereby preventing deterioration of the switching and driving thin film transistors (not shown, DTr) and the light emitting diodes E of the organic light emitting diode display 100 . acceleration, which in turn degrades the reliability and lifespan of the organic light emitting diode display 100 .

Here, in the organic light emitting diode display 100 according to the embodiment of the present invention, the first substrate 110a, the second substrate 110b, and the functional layer 120 of the substrate 110 have a region B having different sizes. ), to minimize the peeling phenomenon of the substrate 110 .

That is, the functional layer 120 or the second substrate 110b is positioned to be spaced apart from the edge of the first substrate 110a by a predetermined distance, so that the substrate 110 is formed in the first region A and the second region B. It can be defined by dividing by .

Here, in the region defined by dividing the first region A and the second region B, the second substrate 110b may be selectively spaced apart from each other, which is selectively spaced apart according to the bending direction of the substrate 110 . can be placed.

Here, the first area A is an area in which both the first and second substrates 110a and 110b and the functional layer 120 are located, and includes the front surface of the active area A/A of the organic light emitting diode display 100 and the first area A. Corresponds to a portion of the non-display area N/A surrounding the edge of the active area A/A, and the second area B is an area selectively spaced apart along the edge of the first area A. The first and second substrates 110a and 110b selectively correspond to regions having different sizes.

As described above, since the organic light emitting diode display 100 according to the embodiment of the present invention includes different layers constituting the substrate 110 including the functional layer 120 , microcracks caused by an external force are prevented from occurring in the functional layer 120 . ) to minimize the propagation to the inside of the substrate 110 and at the same time minimize the drop of the interfacial adhesive layer with the first and second substrates 110a and 110b, so that the peeling phenomenon of the substrate 110 occurs. that can be minimized.

Accordingly, in a flexible environment, even when an external force is generated due to bending, etc., it is possible to more effectively block the expansion of cracks through which moisture and oxygen are introduced into the organic light emitting display device 100 from the outside, and the peeling phenomenon of the substrate 110 . This can also be prevented from occurring, and thus, penetration of moisture and oxygen into the organic light emitting display device 100 can be prevented, and thus the reliability of the organic light emitting display device 100 can be further improved.

Here, the width of the second region (B) is not particularly limited, but is preferably formed to have a width of 100 to 200 μm.

As described above, in the organic light emitting diode display 100 according to the embodiment of the present invention, the flexible substrate 110 includes first and second substrates 110a and 110b made of polyimide, and the first and second substrates 110a and 110b. By differentiating the sizes between the functional layers 120 between the substrates 110a and 110b, the occurrence of cracks through the process of cutting the substrate 110 is minimized, and moisture and oxygen from the outside are removed from the organic light emitting display device. (100) It is possible to block the inflow into the inside, thereby preventing deterioration of device performance of the switching and driving thin film transistors (not shown, DTr), and through this, the reliability of the organic light emitting diode display 100 can also be improved. have.

FIG. 3 is a schematic cross-sectional view taken along the cutting line IIII of FIG. 1 .

In the description with reference to the drawings, descriptions of the same or corresponding components as in the previous drawings will be omitted. Hereinafter, another embodiment of the present specification will be described with reference to this.

One side of the substrate 110 may include a pad area PAD, and ends of the first substrate 110a and the second substrate 110b corresponding to the pad area PAD may be configured to substantially coincide with each other. can

The wirings 131 disposed on the non-display area N/A are provided to connect to the pad 130 of the pad area PAD, and the wirings 131 may be formed of a metal having excellent conductivity. For example, the wiring 131 may be formed of the same metal as the source electrode 113 or the drain electrode 115 of the thin film transistor DTr.

However, the present invention is not limited thereto, and the wiring 131 may be formed of the same metal as the gate electrode 107 of the thin film transistor DTr.

The pad 130 of the pad region PAD to which the wiring 131 is connected includes the first pad 133 formed of the same metal as the gate electrode 107 and the same metal as the source electrode 113 or the drain electrode 115 . and a second pad 135 formed of

In this case, a fourth contact hole 136 exposing the first pad 133 is provided in the first and second interlayer insulating layers 108 and 109 , and the first pad 133 is passed through the fourth contact hole 136 . ) and the second pad 135 come into contact with each other.

At this time, the active buffer layer 103 and the multi-buffer layer 102 are disposed under the first pad 133 , and the first pad 133 and the second pad 135 from moisture and oxygen flowing from the lower portion of the substrate 101 . ) to protect it.

The substrate 110 on which the pad area PAD is disposed is disposed up to the end between the first substrate 110a, the functional layer 120 and the second substrate 110b constituting the substrate 110, and is substantially at the end. This can be the same. In this case, in consideration of the folding direction of the display device, regions in which there is substantially no or minimal influence of external force due to folding may be arranged to have the same end.

As a specific example, the end of each layer constituting the substrate 110 is substantially the same on the side where the pad area PAD is located, and the side opposite to the side or left and right sides of the substrate 110 are each constituting the substrate 110 . The ends between the layers can be configured differently.

4A to 4C are schematic cross-sectional views for explaining a manufacturing method according to another embodiment of the present specification.

In the description of the present embodiment, components identical to or corresponding to those described in the previous description are omitted or briefly indicated. Hereinafter, a method of manufacturing an organic light emitting display device according to the present embodiment will be described with reference to this.

In the method of manufacturing an organic light emitting display using polyimide, a substrate 210 is disposed using a manufacturing substrate GLS in order to use polyimide as a substrate.

The manufacturing substrate GLS is a substrate for supporting the flexible substrate 210 and components disposed on the substrate 210 during the manufacturing process of the organic light emitting display device. The manufacturing substrate GLS may be made of a rigid material, for example, may be made of glass, but is not limited thereto.

A sacrificial layer SL is disposed on the manufacturing substrate GLS. The sacrificial layer SL may be made of a material having a property of decomposing the interfacial bonding force when irradiating the laser, thereby weakening the adhesion to the substrate 210, which will be described later. For example, it may have a structure in which amorphous silicon (a-Si), silicon nitride (SiNx), or silicon (SiOx) layers are stacked.

Next, the substrate 210 having the functional layer 220 is formed on the sacrificial layer SL. The substrate 210 supports various components of the organic light emitting diode display. The substrate 210 may be made of a plastic-based material to have flexibility. For example, it may be made of polyimide (PI) or photo acryl.

The functional layer 220 may be disposed using a hydrophobic material to minimize penetration of oxygen and moisture, and may be formed of a dielectric material to minimize charge accumulation on a plastic-based substrate.

Specifically, a first substrate 210a is disposed on the sacrificial layer SL using a polyimide material, and a hydrophobic material, silicon nitride (SiNx) or silicon oxide (SiOx) functional layer 220 is disposed on the first substrate 210a. ), the second substrate 210b is disposed on the functional layer 220 using a polyimide material to configure the substrate 210 .

A method of disposing the driving element DTr and the light emitting diode E on the substrate 210 will be described with reference to FIG. 4B .

A plurality of thin films such as silicon nitride (SiNx) and silicon oxide (SiOx) are alternately and successively arranged on the substrate 210 to arrange the multi-buffer layer 202, and the organic film and the inorganic film are repeatedly stacked alternately. could be The multi-buffer layer 202 serves to delay diffusion of moisture and/or oxygen penetrating into the substrate 210 .

Thereafter, the driving element DTr and the light emitting diode E are arranged, but each pixel is divided by a bank 219 to form a plurality of pixels.

Thereafter, at least a portion of the second substrate 210b is removed by performing etching using a gas lamp on both ends B of the substrate 210 . Since both ends of the second substrate 210b are removed by an etching process using a gas or the like, the ends may include a cross-section including an obtuse angle.

However, since the first substrate 210a undergoes a cutting process using a laser or the like, the end section may include a section including an acute angle.

In the above configuration, since the second substrate 210b does not undergo a physical cutting process using a laser or the like, physical damage due to the cutting process with the functional layer 220 can be minimized.

Although not shown thereafter, when laser is irradiated to the sacrificial layer SL, the physical properties of the amorphous silicon (a-Si) are changed, and the bonding force between the manufacturing substrate GLS and the first substrate 210a is weakened. ) can be removed.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made within the scope without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed by the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

102: multi-buffer layer, 103: active buffer layer, 104: lower protective metal
105: active layer (105a: channel region, 105b: source region, 105c: drain region)
106: gate insulating layer
107: gate electrode, 108, 109: first and second interlayer insulating films
110: substrates 110a and 110b; first and second substrates)
120: functional layer
111a, 111b: first and second contact holes
113: source electrode, 115: drain electrode
117: protective layer, 119: bulkhead
121: spacer,
123: protective film (123a, 123c: inorganic protective film, 123b: organic protective film)
130: pads 133 and 135: first and second pads, 136: fourth contact hole)
131: wiring, 140: dam
151: active pattern, 153: first metal pattern, 155: second metal pattern, 156: third contact hole, 157: third metal pattern
160: polarizer

Claims (18)

A substrate supporting a driving device and a light emitting device controlled by the driving device, the substrate comprising:
The substrate is made of a material that can be folded or bent,
The substrate includes a first substrate, a second substrate, and a functional layer disposed between the first substrate and the second substrate,
The width of the first substrate is equal to or greater than the width of the second substrate and the functional layer,
The width of the second substrate is equal to or smaller than that of the functional layer. According to claim 1,
The first substrate and the second substrate are polyimide substrates. According to claim 1,
The functional layer is a charge blocking layer including an inorganic insulating material (dielectric). According to claim 1,
The functional layer is a functional layer for minimizing moisture permeation, and the organic light emitting display device includes a hydrophobic material. According to claim 1,
The second substrate may open both ends of the first substrate. 6. The method of claim 5,
The substrate has a folding area, and the second substrate has at least a portion of the first substrate open corresponding to the folding area. 6. The method of claim 5,
The side surface of the first substrate has a cut surface including an acute angle, and the side surface of the second substrate has a cut surface including an obtuse angle. 6. The method of claim 5,
The functional layer opens both ends of the first substrate. According to claim 1,
and a barrier layer formed of a multi-layered inorganic insulating material on the second substrate. 10. The method of claim 9,
The barrier layer opens at least a portion of both ends of the second substrate in one direction. According to claim 1,
a pad region on one side of the substrate;
Ends of the first substrate and the second substrate corresponding to the pad region coincide with each other. A method of manufacturing an organic light emitting display device comprising a driving device and a light emitting device controlled by the driving device, the method comprising:
disposing a first substrate on a manufacturing substrate;
disposing a functional layer on the first substrate;
disposing a second substrate on the functional layer;
disposing the driving device and the light emitting device on the second substrate;
removing at least a portion of the second substrate to open the first substrate; and
and separating the manufacturing substrate and the first substrate. 13. The method of claim 12,
disposing a first substrate on the manufacturing substrate;
and disposing a sacrificial layer on the manufacturing substrate and disposing the first substrate. 14. The method of claim 13,
Separating the manufacturing substrate and the first substrate;
and irradiating a laser to the sacrificial layer through a rear surface of the manufacturing substrate. 13. The method of claim 12,
disposing the driving device and the light emitting device on the second substrate;
and disposing a barrier layer on the second substrate. 13. The method of claim 12,
disposing a functional layer on the first substrate;
and forming a functional layer by coating a hydrophobic material on the first substrate. 13. The method of claim 12,
removing at least a portion of the second substrate to open the first substrate;
and etching both ends of the second substrate. 13. The method of claim 12,
removing at least a portion of the second substrate to open the first substrate;
and removing at least a portion of both ends of the functional layer.

Images