KR102585982B1 - Organic light emitting display device and method for manufacturing the same - Google Patents

Abstract

This specification discloses an organic light emitting display device. The organic light emitting display device includes a flexible substrate; a pixel driving circuit arranged on one side of the flexible substrate; It corresponds to the entire surface of one side of the flexible substrate and includes a conductive shielding layer provided to prevent moisture introduced through the flexible substrate from diffusing into the pixel driving circuit.

Description

Organic light emitting display device and manufacturing method {ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME}

This specification relates to an organic light emitting display device and a manufacturing method thereof.

Video display devices, which display various information on a screen, are a core technology of the information and communication era and are developing to be thinner, lighter, more portable, and more high-performance. Accordingly, organic light emitting display devices that display images by controlling the amount of light emitted from organic light emitting elements are receiving attention.

Organic light-emitting devices are self-luminous devices that use a thin light-emitting layer between electrodes and have the advantage of being able to be made into thin films. A typical organic light emitting display device has a structure in which a pixel driving circuit and an organic light emitting element are formed on a substrate, and the light emitted from the organic light emitting element passes through the substrate or barrier layer to display an image.

Since the organic light emitting display device is implemented without a separate light source device, it is easy to be implemented as a flexible display device. At this time, flexible materials such as plastic and thin metal foil are used as substrates for organic light emitting display devices. Among the flexible materials, polyimide (PI) is generally used as a substrate for organic light emitting display devices. Polyimide has heat resistance that can withstand the display device manufacturing process, but has high hygroscopicity, so research is being conducted to supplement this.

The purpose of this specification is to propose an organic light emitting display device and a process applied to the organic light emitting display device. The tasks of this specification are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the description below.

An organic light emitting display device is provided according to an embodiment of the present specification. The organic light emitting display device includes a flexible substrate; a pixel driving circuit arranged on one side of the flexible substrate; It may include a conductive shielding layer that corresponds to all of one side of the flexible substrate and is provided to prevent moisture introduced through the flexible substrate from diffusing into the pixel driving circuit.

The flexible substrate may be made of polyimide.

The conductive shielding layer may have a water vapor transmission rate (WVTR) that is smaller than that of the flexible substrate.

The conductive shielding layer may be made of any one or more of metal, conducting polymer, and graphene.

The conductive shielding layer may be made of a transparent material such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO).

Specific details of other embodiments are included in the detailed description and drawings.

Embodiments of the present specification can provide a flexible organic light emitting display device with improved long-term reliability, especially the problem of afterimages due to invasiveness. Additionally, embodiments of the present specification can provide a method for easily manufacturing a flexible organic light emitting display device having the above characteristics. Accordingly, the flexible organic light emitting display device according to the embodiments of the present specification can be produced with high reliability and at low manufacturing cost. The effects according to the embodiments of the present specification are not limited to the contents exemplified above, and further various effects are included in the present specification.

1 is a plan view showing an organic light emitting display device according to an embodiment of the present specification.
Figure 2 is a cross-sectional view showing a portion of the display area of the organic light emitting display device according to the first embodiment of the present specification.
Figure 3 is a cross-sectional view showing an organic light emitting display device according to a second embodiment of the present specification.
4A and 4B are diagrams showing a portion of the manufacturing process of an organic light emitting display device according to a second embodiment of the present specification.
Figure 5 is a diagram showing an organic light emitting display device according to a third embodiment of the present specification.
Figure 6 is a diagram showing an organic light emitting display device according to a fourth embodiment of the present specification.

The advantages and features of the present specification and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms. The present embodiments only serve to ensure that the disclosure of the present invention is complete and that common knowledge in the technical field to which the present invention pertains is not limited. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

The shape, size, ratio, angle, number, etc. disclosed in the drawings for explaining the embodiments of the present specification are illustrative, and the present specification is not limited to the matters shown. Like reference numerals refer to like elements throughout the specification. Additionally, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. When 'includes', 'has', 'consists of', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the plural is included unless specifically stated otherwise. When interpreting a component, it is interpreted to include the margin of error even if there is no separate explicit description.

In the case of a description of a positional relationship, for example, if the positional relationship of two parts is described as 'on top', 'on the top', 'on the bottom', 'next to', etc., 'immediately' Alternatively, there may be one or more other parts placed between the two parts, unless 'directly' is used. When an element or layer is referred to as “on” another element or layer, it includes instances where the other layer or other element is directly on top of or interposed between the other elements. When a component is described as being “connected,” “coupled,” or “connected” to another component, that component may be directly connected or connected to that other component, but there are no other components between each component. It should be understood that may be “interposed” or that each component may be “connected,” “combined,” or “connected” through other components.

Although first, second, etc. are used to describe various elements, these elements are not limited by these terms. These terms are merely used to distinguish one component from another. Accordingly, the first component mentioned below may also be the second component within the technical spirit of the present invention.

The size and thickness of each component shown in the drawings are shown for convenience of explanation, and the present invention is not necessarily limited to the size and thickness of the components shown. Hereinafter, various embodiments of the present invention will be described in detail with reference to the attached drawings.

1 is a plan view showing an organic light emitting display device according to an embodiment of the present specification.

Referring to FIG. 1, the organic light emitting display device 100 includes at least one display area (active area, A/A), and an array of pixels is disposed in the display area. One or more inactive areas (I/A) may be placed around the display area. That is, the non-display area may be adjacent to one or more sides of the display area. In Figure 1, the non-display area surrounds a rectangular display area. However, the shape of the display area and the shape/arrangement of the non-display area adjacent to the display area are not limited to the example shown in FIG. 1. The display area and the non-display area may have a shape suitable for the design of an electronic device equipped with the display device 100. Exemplary shapes of the display area include pentagon, hexagon, circle, oval, etc.

Each pixel within the display area (A/A) may be associated with a pixel driving circuit. The pixel driving circuit may include one or more switching transistors and one or more driving transistors. Each pixel driving circuit may be electrically connected to a gate line and a data line to communicate with a gate driver, data driver, etc. located in the non-display area.

The gate driver and data driver may be implemented as a thin film transistor (TFT) in the non-display area (I/A). These drivers may be referred to as gate-in-panel (GIP). Additionally, some components, such as data driver ICs, are mounted on separate printed circuit boards and circuit films such as FPCB (flexible printed circuit board), COF (chip-on-film), TCP (tape-carrier-package), etc. It can be combined with a connection interface (pad, bump, pin, etc.) disposed in the non-display area. The printed circuit (COF, PCB, etc.) may be located behind the display device 100.

The organic light emitting display device 100 may include various additional elements for generating various signals or driving pixels within the display area. Additional elements for driving the pixel may include an inverter circuit, a multiplexer, an electrostatic discharge circuit, etc. The organic light emitting display device 100 may also include additional elements related to functions other than pixel driving. For example, the organic light emitting display device 100 may include additional elements that provide a touch detection function, a user authentication function (e.g., fingerprint recognition), a multi-level pressure detection function, a tactile feedback function, etc. there is. The above-mentioned additional elements may be located in the non-display area and/or in an external circuit connected to the connection interface.

The organic light emitting display device according to the present specification may include a substrate 101 on which thin film transistors and organic light emitting elements are arranged, an encapsulation layer 120, a barrier film 140, etc.

The substrate 101 supports various components of the organic light emitting display device 100. The substrate 101 may be formed of a transparent insulating material, such as glass or plastic. The substrate (array substrate) is also referred to as a concept that includes elements and functional layers formed thereon, such as a switching TFT, a driving TFT connected to the switching TFT, an organic light emitting element connected to the driving TFT, a protective film, etc.

The organic light emitting device is disposed on the substrate 101. The organic light emitting device includes an anode, an organic light emitting layer formed on the anode, and a cathode formed on the organic light emitting layer. The organic light-emitting device may be composed of a single light-emitting layer structure that emits a single light, or may be composed of a plurality of light-emitting layers that emit white light. When the organic light emitting device emits white light, a color filter may be further provided. The organic light emitting device may be formed in the central portion of the substrate 101 to correspond to the display area.

The encapsulation layer 120 may cover the organic light emitting device. The encapsulation layer protects the organic light emitting device from external moisture or oxygen. A barrier film is placed on the encapsulation layer.

Figure 2 is a cross-sectional view showing a portion of the display area of the organic light emitting display device according to the first embodiment of the present specification.

Referring to FIG. 2, thin film transistors 102, 104, 106, and 108, organic light emitting devices 112, 114, and 116, and various functional layers are located on the substrate 101.

The substrate (or array substrate) may be a glass or plastic substrate. In the case of a plastic substrate, a polyimide-based or polycarbonate-based material may be used to provide flexibility. In particular, polyimide is widely used as a plastic substrate because it can be applied to high-temperature processes and is a coatable material.

The buffer layer 130 is a functional layer to protect the thin film transistor from impurities such as alkali ions leaking from the substrate 101 or lower layers. The buffer layer may be made of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof. The buffer layer 130 may include a multi buffer (131) and/or an active buffer (132). The multi-buffer 131 may be formed by alternately stacking silicon nitride (SiNx) and silicon oxide (SiOx), and may delay the diffusion of moisture and/or oxygen penetrating into the substrate 101. The active buffer 132 protects the semiconductor layer 102 of the transistor and functions to block various types of defects flowing from the substrate 101. The active buffer 132 may be formed of a-Si or the like.

The thin film transistor may have a semiconductor layer 102, a gate insulating film 103, a gate electrode 104, an interlayer insulating film 105, and source and drain electrodes 106 and 108 arranged sequentially. The thin film transistor (TFT) may be a P-type TFT or an N-type TFT. The P-type TFT is a TFT in which ions in the channel are doped with a Group 3 element such as boron so that current flow is caused by the movement of holes. It is also called PMOS. The N-type TFT is a TFT in which ions in the channel are doped with a Group 5 element such as phosphorus so that current flow occurs through the movement of electrons. It is also called NMOS. The semiconductor layer 102 is located on the buffer layer 130. The semiconductor layer 102 may be made of polysilicon (p-Si), in which case a predetermined region may be doped with impurities. Additionally, the semiconductor layer 102 may be made of amorphous silicon (a-Si), or may be made of various organic semiconductor materials such as pentacene. Furthermore, the semiconductor layer 102 may be made of oxide. The gate insulating film 103 may be formed of an insulating inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx), and may also be made of an insulating organic material. It could be. The gate electrode 104 is made of various conductive materials, such as magnesium (Mg), aluminum (Al), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W), gold (Au), or alloys thereof. etc. can be formed.

The interlayer insulating film 105 may be formed of an insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), and may also be formed of an insulating organic material. By selectively removing the interlayer insulating film 105 and the gate insulating film 103, a contact hole exposing the source and drain regions may be formed.

The source and drain electrodes 106 and 108 are formed of an electrode material on the interlayer insulating film 105 in a single-layer or multi-layer shape.

A planarization layer 107 may be located on the thin film transistor. The planarization layer 107 protects the thin film transistor and planarizes its top. The planarization layer 107 may be formed in various forms, and may be formed of an organic insulating film such as BCB (Benzocyclobutene) or acryl, or an inorganic insulating film such as silicon nitride (SiNx) or silicon oxide (SiOx). Various modifications are possible, such as being formed as a single layer or consisting of double or multiple layers.

The lower protective metal 109 is formed at the bottom of the transistor to prevent changes in device characteristics (eg, threshold voltage, etc.) of the transistor due to moisture flowing in from the outside. As a result, the bottom shield metal (BSM) can prevent luminance imbalance (appearing as a stain or afterimage) between pixels. In addition, the lower protective metal 109 can minimize physical damage to the transistor during the manufacturing process (eg, removing the glass substrate) of the flexible organic light emitting display device.

Polyimide (PI) has a high hygroscopicity, with a water vapor transmission rate (WVTR) of several to tens of g/m ² 24hr. Therefore, when polyimide (PI) is used as the substrate 101, there may be a lot of moisture (H ₂ O) flowing through the substrate. At this time, H ⁺ and OH ^- ions of H ₂ O diffuse toward the TFT. The diffused ions act as mobile charges and affect TFT driving (e.g., V _th variation), thereby deteriorating TFT device performance.

Since the buffer layer 130 ^is not effective in preventing the diffusion of the ions at a WVTR of ^several Patterning blocks moisture and/or its ions.

Meanwhile, since the lower protective metal 109 is made of a metal material, it can also be an element that forms a predetermined capacitance. At this time, if the lower protective metal 109 is electrically floating, the capacitance changes, so the lower protective metal 109 is grounded to the source/drain through the connecting member 109-1 to keep the capacitance constant. It can be maintained.

In the flexible organic light emitting display device according to an embodiment of the present specification, the lower protective metal 109 may be located under the semiconductor layer of all transistors, or, if necessary, only under the semiconductor layer of a specific transistor (e.g., driving transistor). You may.

The organic light emitting device may have a first electrode 112, an organic light emitting layer 114, and a second electrode 116 arranged sequentially. That is, the organic light emitting device includes a first electrode 112 formed on the planarization layer 107, an organic light emitting layer 114 located on the first electrode 112, and a second electrode located on the organic light emitting layer 114 ( 116).

The first electrode 112 is electrically connected to the drain electrode 108 of the driving thin film transistor through a contact hole. When the organic light emitting display device 100 is a top emission type, the first electrode 112 may be made of an opaque conductive material with high reflectivity. For example, the first electrode 112 may be formed of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or an alloy thereof. .

The bank 110 is formed in the remaining area excluding the light emitting area. Accordingly, the bank 110 has a bank hole that exposes the first electrode 112 corresponding to the light emitting area. The bank 110 may be made of an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), or an organic insulating material such as BCB, acrylic resin, or imide resin.

The organic light emitting layer 114 is located on the first electrode 112 exposed by the bank 110 . The organic light-emitting layer 114 may include a light-emitting layer, an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer.

The second electrode 116 is located on the organic light emitting layer 114. When the organic light emitting display device 100 is a top emission type, the second electrode 116 is a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). By being formed of a material, the light generated in the organic light emitting layer 114 is emitted to the upper part of the second electrode 116.

A protective layer 118 and an encapsulation layer 120 are located on the second electrode 116. The protective layer 118 and the encapsulation layer 120 prevent oxygen and moisture from penetrating from the outside to prevent oxidation of the light emitting material and electrode material. When an organic light-emitting device is exposed to moisture or oxygen, pixel shrinkage, which reduces the light-emitting area, may occur, or dark spots may appear within the light-emitting area. The passivation layer and/or the encapsulation layer are composed of an inorganic film made of glass, metal, aluminum oxide (AlOx), or silicon (Si)-based material, or are composed of an organic film and an inorganic film alternately. It may also be a layered structure. The inorganic film serves to block the penetration of moisture or oxygen, and the organic film serves to flatten the surface of the inorganic film. The reason for forming the encapsulation layer with multiple thin film layers is to make the movement path of moisture or oxygen longer and more complicated than a single layer, making it difficult for moisture/oxygen to penetrate into the organic light emitting device.

The barrier film 140 is positioned on the encapsulation layer 120 to encapsulate the entire substrate 101 including the organic light emitting device. The barrier film 140 may be a retardation film or an optically isotropic film. If the barrier film has optical isotropic properties, the incident light passing through the barrier film is transmitted without phase delay. Additionally, an organic layer or an inorganic layer may be further positioned on the upper or lower surface of the barrier film. The organic or inorganic film formed on the upper or lower surface of the barrier film serves to block the penetration of external moisture or oxygen.

An adhesive layer may be positioned between the barrier film 140 and the encapsulation layer 120. The adhesive layer adheres the encapsulation layer 120 and the barrier film 140. The adhesive layer may be a heat-curing or naturally curing adhesive. For example, the adhesive layer may be composed of a material such as Barrier pressure sensitive adhesive (B-PSA).

A touch panel (film), a polarizing film, a top cover, etc. may be further positioned on the barrier film 140.

Figure 3 is a cross-sectional view showing an organic light emitting display device according to a second embodiment of the present specification.

The organic light emitting display device 100 includes an array substrate 101, a buffer layer 130, a pixel driving circuit and an organic light emitting device (TFT/OLED), an encapsulation layer 120, a barrier film 140, and a support layer 150. ), and may include a conductive shielding layer 160.

The array substrate 101 is made of an insulating material and supports various components of the organic light emitting display device 100. The array substrate 101 may be a flexible substrate made of a polyimide-based or polycarbonate-based material.

A pixel driving circuit and an organic light emitting device (TFT/OLED) are disposed on one side of the array substrate 110. The organic light emitting device includes an anode, an organic light emitting layer formed on the anode, and a cathode formed on the organic light emitting layer. The organic light emitting layer may have a single light emitting layer structure that emits a single light, or may have a structure composed of a plurality of light emitting layers that emit white light. The organic light emitting device may be formed in the central portion of the array substrate 110 to correspond to the display area. A pixel driving circuit for driving an organic light emitting device, that is, various devices and wiring, such as a thin film transistor and a capacitor, may be arranged in relation to the organic light emitting device. The exemplary structure and function of the pixel driving circuit and the organic light emitting device are substantially the same as those described in FIG. 2 . That is, the pixel driving circuit and the organic light emitting device (TFT/OLED) include data lines, gate lines, thin film transistors (e.g., P-type thin film transistors, N-type thin film transistors, etc.), organic light emitting diodes, etc. on the array substrate 101. It can be viewed as a layer where elements are placed.

A buffer layer 130 may be positioned between the array substrate 101 and the pixel driving circuit and the organic light emitting device (TFT/OLED). The exemplary structure and function of the buffer layer 130 are substantially the same as those described in FIG. 2 .

The encapsulation layer 120 covers the pixel driving circuit and the organic light emitting device (TFT/OLED) to prevent oxygen and moisture from penetrating into it from the outside. The encapsulation layer 120 may be composed of a plurality of layers in which inorganic protective films and organic protective films are alternately arranged. Inorganic protective films are more suitable than organic protective films in preventing the penetration of oxygen and moisture, and organic protective films can play a role in supplementing the impact resistance of inorganic protective films.

The barrier film 140 is positioned on the encapsulation layer 120 to encapsulate the entire substrate 101 including the organic light emitting device. The barrier film 140 may be a retardation film or an optically isotropic film. If the barrier film has optical isotropic properties, the incident light passing through the barrier film is transmitted without phase delay. A touch panel (film), a polarizing film, a top cover, etc. may be further positioned on the barrier film 140.

Meanwhile, a conductive shielding layer 160 and a support layer 150 are sequentially formed under the array substrate 101.

The support layer 150 is a back-plate that supports the substrate 101 so that it does not bend too easily. The support layer 150 is made of polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyethylene ether phthalate, polycarbonate, polyarylate, poly It may be formed of one or more organic materials selected from polyether imide, polyether sulfonate, polyimide, or polyacrylate.

The conductive shielding layer 160 is in contact with the entire lower surface of the array substrate 101 and prevents moisture or oxygen from penetrating into the array substrate 101 from the outside (lower part). That is, the conductive shielding layer 160 is provided to prevent moisture introduced through the flexible substrate from diffusing into the pixel driving circuit.

The conductive shielding layer 160 is provided to correspond to the entire area (entire area) of one side (top or bottom) of the flexible substrate 101. That is, the conductive shielding layer 160 can completely cover one side of the flexible substrate. The conductive shielding layer 160 may be prepared to have a thickness of 2000 to 3000 Å.

As in the first embodiment of FIG. 2, when the lower protective metal 109 is partially patterned in a specific area, mobile charges are accumulated in the area without the lower protective metal 109, resulting in deterioration of TFT characteristics. may result in This deterioration may adversely affect the long-term reliability (e.g., afterimage recovery) of the organic light emitting display device. Additionally, a connecting member (109-1, B-CNT) must be made to supply a certain voltage to the lower protective metal (109). Therefore, two processes and a mask are required to form the lower protective metal 109 and the connecting member 109-1.

On the other hand, in the second embodiment of FIG. 3, the conductive shielding layer 160 is provided to cover the entire lower surface of the substrate 101 (the side opposite to the side on which the pixel driving circuit is arranged among both sides of the substrate). Accordingly, the process of patterning the protective metal 109 through the above two masks can be omitted. This is very advantageous in terms of manufacturing cost reduction, productivity improvement, and panel design freedom.

Meanwhile, since the conductive shielding layer 160 is made of a material with a WVTR smaller than that of the array substrate 101 (approximately 1/1000 or less), moisture penetration through the array substrate 101 is almost blocked. Additionally, since the conductive shielding layer 160 is made of a conductive material, it can trap mobile ions (H ⁺ , OH ^- ) when a voltage is applied and prevent them from moving to the TFT.

Examples of the conductive material include metal, conducting polymer, graphene, etc. Conductive polymers are generally polymers that display a conductivity value of 10 ^{- 7} Scm ^-1 or higher, and high conductivity is often obtained by doping the polymer with an electron acceptor or electron donor. Doped polyethylene, polypyrrole, polythiophene, etc. are representative conductive polymers. Graphene is a material in which carbon atoms form a honeycomb structure in a plane. Graphene is very thin and transparent, and has excellent chemical stability and electrical conductivity. In particular, it has good elasticity and does not lose electrical conductivity even when stretched or folded.

The conductive shielding layer 160 may be made of a material that is bendable to a predetermined radius of curvature to be suitable for a flexible organic light emitting display device. The metals, conductive polymers, graphene, etc. have this flexibility.

Metals such as copper, aluminum, and silver have excellent moisture blocking capabilities, with a WVTR of several times 10 ^-6 g/m ² 24hr. However, because these metals are opaque, applicable products may be limited. On the other hand, the conductive shielding layer 160 may be made of a transparent material depending on the characteristics of the organic light emitting display device. In this case, the conductive shielding layer 160 may be made of a transparent electrode material such as indium tin oxide (ITO) or indium zinc oxide (IZO). ITO and IZO also have excellent moisture resistance, with a WVTR of 10 ^-3 ~10 ^-6 g/m ² 24hr.

The flexible organic light emitting display device to which the second embodiment of the present specification is applied not only has moisture resistance performance equal to or greater than that of the structure according to the first embodiment, but can also be manufactured through a more simplified process. That is, the flexible organic light emitting display device to which the second embodiment of the present specification is applied has the advantage of reducing manufacturing costs.

4A and 4B are diagrams showing a portion of the manufacturing process of an organic light emitting display device according to a second embodiment of the present specification.

There are the following two examples of methods for forming the conductive shielding layer 160 under the array substrate 101, as in the second embodiment of FIG. 3.

First, FIG. 4A shows a method of attaching the support layer 150 with the conductive shielding layer 160 on the upper surface to the lower surface of the array substrate 101. That is, after the conductive shielding layer 160 is formed on one side of the support layer 150 by a method such as deposition, the conductive shielding layer 160 and the array substrate 101 are attached facing each other. At this time, an adhesive such as PSA (pressure sensitive adhesive) may be used.

Figure 4b shows a method of forming a conductive shielding layer 160 on the bottom of the array substrate 101 and then attaching a support layer 150. According to this method, a conductive shielding layer 160 is first formed on the lower surface of the array substrate 101 by deposition, etc., and a commonly used support layer 150 is attached to the outside of the conductive shielding layer 160. . Even in this case, an adhesive such as PSA (pressure sensitive adhesive) may be used.

Figure 5 is a diagram showing an organic light emitting display device according to a third embodiment of the present specification.

The third embodiment of FIG. 5 is the same as the second embodiment of FIG. 3 except that the conductive shielding layer 160 is located on the array substrate 101. That is, in the third embodiment, the conductive shielding layer 160 is located on the substrate 101, and the buffer layer 130, a pixel driving circuit, and an organic light emitting device (TFT/OLED) are placed on the conductive shielding layer 160. , the encapsulation layer 120, etc. are sequentially stacked.

The conductive shielding layer 160 is provided between the pixel driving circuit and the array substrate 101, and more specifically, between the buffer layer 130 and the array substrate 101. The buffer layer 130 is between the pixel driving circuit and the organic light emitting device (TFT/OLED) and the array substrate 101. At this time, the support layer 150 is located outside the array substrate 101.

Figure 6 is a diagram showing an organic light emitting display device according to a fourth embodiment of the present specification.

The fourth embodiment of FIG. 6 is the same as the second embodiment of FIG. 3 except that the conductive shielding layer 160 is located in the middle of the array substrate 101. That is, in the fourth embodiment, the conductive shielding layer 160 is located between the substrate 101 composed of two separate layers, and the buffer layer 130, the pixel driver circuit, and the organic light emitting device are provided on the array substrate 101. (TFT/OLED), encapsulation layer 120, etc. are sequentially stacked.

In the fourth embodiment, the array substrate 101 is composed of two or more separate layers, and each layer may be made of the same material or different materials. A conductive shielding layer 160 is sandwiched between the separate layers.

The flexible organic light emitting display device to which the third and fourth embodiments of the present specification are applied not only has moisture resistance performance equal to or greater than that of the structure according to the first embodiment, but also can be manufactured through a more simplified process. That is, the flexible organic light emitting display device to which the third and fourth embodiments of the present specification are applied also has advantages in terms of manufacturing cost and panel design freedom.

Although embodiments of the present specification have been described in detail with reference to the attached drawings, the present specification is not necessarily limited to these embodiments, and various modifications may be made without departing from the technical spirit thereof. Accordingly, the embodiments disclosed in this specification are not intended to limit the technical idea of the present invention, but rather to explain it, and the scope of the technical idea of the present invention is not limited by these embodiments. Each feature of the various embodiments of the present invention can be partially or entirely combined or combined with each other, and can be technically linked and driven in various ways by those skilled in the art, and each embodiment can be performed independently of each other or together in a related relationship. It may be implemented.

The scope of protection of the present invention should be interpreted in accordance with the claims below, and all technical ideas within the equivalent scope should be construed as being included in the scope of rights of the present invention.

Claims (13)

A flexible substrate having a defined display area and a non-display area disposed around the display area;
a pixel driving circuit arranged on one side of the flexible substrate corresponding to the display area;
an encapsulation layer disposed on the pixel driving circuit and having an area larger than that of the display area;
a barrier film disposed on the encapsulation layer and having an area larger than that of the encapsulation layer; and
An organic light emitting display device comprising a conductive shielding layer that corresponds to all of one side of the flexible substrate and is provided to prevent moisture introduced through the flexible substrate from diffusing into the pixel driving circuit. According to claim 1,
The flexible substrate is an organic light emitting display device made of polyimide. According to claim 1,
The conductive shielding layer is positioned to cover a side of the flexible substrate opposite to the side on which the pixel driving circuit is arranged. According to claim 1,
Further comprising a buffer layer between the flexible substrate and the pixel driving circuit,
The conductive shielding layer is located between the buffer layer and the flexible substrate. According to claim 1,
The flexible substrate is two separate layers,
The conductive shielding layer is located between the separated layers. According to claim 1,
The conductive shielding layer has a water vapor transmission rate (WVTR) that is smaller than that of the flexible substrate. According to clause 6,
The WVTR of the conductive shielding layer is 1/1000 or less of the WVTR of the flexible substrate. According to clause 6,
The conductive shielding layer is an organic light emitting display device made of one or more of metal, conductive polymer, and graphene. According to claim 1,
An organic light emitting display device in which the conductive shielding layer is made of a transparent material. According to clause 9,
An organic light emitting display device in which the conductive shielding layer is made of ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). According to claim 1,
The conductive shielding layer is an organic light emitting display device that is bendable to a predetermined radius of curvature. According to claim 1,
The pixel driving circuit is an organic light emitting display device including a P-type thin film transistor (P-type TFT). According to claim 1,
An organic light emitting display device in which the conductive shielding layer is made of graphene.

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