KR20190013082A - Display device - Google Patents

Abstract

Disclosed in the present specification is a display device. The display device comprises: a display region having a pixel circuit associated with one or more pixels; and a non-display region having a power wiring connected to the pixel circuit. The non-display region can comprise: a first section and a second section having an organic layer covering the power wiring; and a third section between the first section and the second section without the organic layer covering the power wiring.

Description

Display device {DISPLAY DEVICE}

This specification relates to a display device.

The image display device that realizes various information on the screen is a core technology of the information communication age and it is becoming thinner, lighter, more portable and higher performance. Accordingly, an organic light emitting display device for displaying an image by controlling the amount of light emitted from the organic light emitting device has attracted attention.

The organic light emitting device is advantageous in that it can be made thin as a self-luminous device using a thin light emitting layer between electrodes. A general organic light emitting display has a structure in which a pixel driving circuit and an organic light emitting element are formed on a substrate, and light emitted from the organic light emitting element passes through a substrate or a barrier layer to display an image.

Various display devices including an organic light emitting display device can prevent penetration and / or propagation of moisture in various ways because the performance such as long-term reliability may be deteriorated when moisture permeation occurs. In particular, various structures for preventing water penetration along the wiring of the outer part are studied / applied.

The present specification aims to propose a moisture-proof structure of a display device. The problems of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

A display device is provided according to an embodiment of the present disclosure. The display device includes: a display region having pixel circuits associated with one or more pixels; And a non-display area having a power supply line connected to the pixel circuit, wherein the non-display area includes a first section and a second section in which an organic layer covering the power supply wiring is present, and a second section in which the first section and the second section And may include a third section without an organic layer covering the power supply line.

According to another embodiment of the present invention, an organic light emitting display is provided. The organic light emitting display includes: a pixel circuit; And a wiring connected to the pixel circuit, wherein the wiring includes a first portion formed on the first layer, a second portion formed on the second layer different from the first layer and connected to the first portion, At least a portion of the first portion may be covered with a planarizing layer, and a reflective layer may be located above the second portion.

The details of other embodiments are included in the detailed description and drawings.

Embodiments of the present invention can provide a display device with improved reliability degradation due to moisture penetration. In addition, the embodiments of the present invention can provide a structure for preventing the moisture permeation path through the wiring portion outside the display device. The effects according to the embodiments of the present invention are not limited by the contents exemplified above, and more various effects are included in the specification.

Figure 1 illustrates an exemplary display device that may be included in an electronic device.
2A and 2B are cross-sectional views schematically showing a display region and a non-display region of a display device according to an embodiment of the present invention.
3 is an example for explaining the wiring arrangement of the display device.
Figs. 4A to 4D show another example of the wiring arrangement of the display device. Fig.
5A to 5D are views showing a display device according to an embodiment of the present invention.

Brief Description of the Drawings The advantages and features of the present disclosure, and how to accomplish them, will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Where the terms "comprises", "having", "done", and the like are used in this specification, other portions may be added unless "only" is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise. In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions. An element or layer is referred to as being another element or layer "on ", including both intervening layers or other elements directly on or in between. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; intervening "or that each component may be" connected, "" coupled, "or " connected" through other components.

Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

The sizes and thicknesses of the individual components shown in the figures are shown for convenience of explanation and the present invention is not necessarily limited to the size and thickness of the components shown. Various embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

Figure 1 illustrates an exemplary display device that may be included in an electronic device.

Referring to FIG. 1, the display device 100 includes at least one active area, and an array of pixels is formed in the display area. One or more inactive areas may be disposed around the display area. That is, the non-display area may be adjacent to one or more sides of the display area. In Fig. 1, the non-display area surrounds a display area of a rectangular shape. However, the shape of the display region and the shape / arrangement of the non-display region adjacent to the display region are not limited to the example shown in Fig. The display area and the non-display area may be in a form suitable for the design of the electronic device on which the display device 100 is mounted. Illustrative forms of the display area are pentagonal, hexagonal, circular, oval, and the like.

Each pixel in the display area can be associated with a pixel circuit. The pixel circuit may include at least one switching transistor and at least one driving transistor on a backplane. Each pixel circuit may be electrically connected to a gate line and a data line to communicate with one or more driving circuits such as a gate driver and a data driver located in the non-display area.

The driving circuit may be implemented with a thin film transistor (TFT) in the non-display region, as shown in FIG. This driving circuit may be referred to as a gate-in-panel (GIP). In addition, some components, such as a data driver IC, are mounted on a separate printed circuit board, and circuit films such as flexible printed circuit boards (FPCB), chip-on-film (COF), tape- (Pad / bump, pin, etc.) disposed in the non-display area. The non-display area may be bent together with the connection interface so that the printed circuit (COF, PCB, etc.) may be positioned behind the display device 100.

The display device 100 may include various additional elements for generating various signals or driving pixels in the display area. The additional element for driving the pixel may include an inverter circuit, a multiplexer, an electrostatic discharge circuit, and the like. The display device 100 may also include additional elements associated with functions other than pixel driving. For example, the display device 100 may include additional elements that provide a touch sensing function, a user authentication function (e.g., fingerprint recognition), a multi-level pressure sensing function, a tactile feedback function, and the like. The above-mentioned additional elements may be located in the non-display area and / or an external circuit connected to the connection interface.

2A and 2B are cross-sectional views schematically showing a display region and a non-display region of a display device according to an embodiment of the present invention.

The illustrated display area and non-display area can be applied to at least a part of the display area A / A and the non-display area A / A-2 described in Fig. Hereinafter, the display device will be described by taking an organic light emitting display as an example.

In the organic light emitting display, thin film transistors 112, 114, 116 and 118, organic light emitting devices 122, 124 and 126 and various functional layers are disposed on the base layer 111 in the display region . On the other hand, various driving circuits, electrodes, wires, functional structures, and the like may be positioned on the base layer 111 in the non-display area.

The base layer 111 supports various components of the OLED display 100. The base layer 111 may be formed of a transparent insulating material, for example, an insulating material such as glass, plastic, or the like. The substrate (array substrate) may also be referred to as a concept including an element and a functional layer formed thereon, for example, a switching TFT, a driving TFT, an organic light emitting element, a protective film and the like.

A buffer layer may be located on the base layer 111. The buffer layer is a functional layer for protecting a thin film transistor (TFT) from an impurity such as an alkali ion or the like flowing out from the base layer 111 or the lower layers. The buffer layer may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof.

A thin film transistor is placed on the base layer 111 or the buffer layer. The thin film transistor may be a semiconductor layer 112, a gate insulating film 113, a gate electrode 114, an interlayer insulating film 115, and source and drain electrodes 116 and 118 sequentially arranged. The semiconductor layer 112 is located on the base layer 111 or the buffer layer. The semiconductor layer 112 may be made of polysilicon (p-Si), in which case a predetermined region may be doped with impurities. In addition, the semiconductor layer 112 may be made of amorphous silicon (a-Si), or may be made of various organic semiconductor materials such as pentacene. Further, the semiconductor layer 112 may be made of oxide. The gate insulating film 113 may be formed of an insulating inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx), or may be formed of an insulating organic material or the like. The gate electrode 114 may be formed of various conductive materials such as Mg, Al, Ni, Cr, Mo, W, Au, Or the like.

The interlayer insulating layer 115 may be formed of an insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), or may be formed of an insulating organic material or the like. A contact hole through which the source and drain regions are exposed may be formed by selective removal of the interlayer insulating film 115 and the gate insulating film 113.

The source and drain electrodes 116 and 118 are formed on the interlayer insulating film 115 in the form of a single layer or a multi-layer as an electrode material.

The planarization layer 117 may be located on the thin film transistor. The planarization layer 117 protects the thin film transistor and flattenes the top of the thin film transistor. The planarization layer 117 may be formed in various shapes and may be formed of an organic insulation film such as BCB (benzocyclobutene) or acrylic, or an inorganic insulation film such as a silicon nitride film (SiNx) or a silicon oxide film (SiOx) It may be formed as a single layer, or it may be composed of a double layer or a multi layer.

The organic light emitting device may have a structure in which the first electrode 122, the organic light emitting layer 124, and the second electrode 126 are sequentially disposed. That is, the organic light emitting device includes a first electrode 122 formed on the planarization layer 117, an organic light emitting layer 124 disposed on the first electrode 122, and a second electrode (not shown) disposed on the organic light emitting layer 124 126).

The first electrode 122 is electrically connected to the drain electrode 118 of the driving thin film transistor through the contact hole. When the organic light emitting display 100 is a top emission type, the first electrode 122 may be made of an opaque conductive material having high reflectance. For example, the first electrode 122 may be formed of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr) .

The bank 120 is formed in the remaining region except for the light emitting region. Accordingly, the bank 120 has a bank hole for exposing the first electrode 122 corresponding to the light emitting region. The bank 120 may be made of an inorganic insulating material such as a silicon nitride film (SiNx), a silicon oxide film (SiOx), or an organic insulating material such as BCB, acrylic resin or imide resin.

The organic light emitting layer 124 is positioned on the first electrode 122 exposed by the bank 120. [ The organic light emitting layer 124 may include a light emitting layer, an electron injection layer, an electron transport layer, a hole transport layer, a hole injection layer, and the like. The organic light emitting layer may have a single light emitting layer structure that emits a single light or may include a plurality of light emitting layers to emit white light.

And the second electrode 126 is located on the organic light emitting layer 124. When the OLED display 100 is a top emission type, the second electrode 126 may be a transparent conductive layer such as indium tin oxide (ITO) or indium zinc oxide (IZO) Thereby emitting the light generated in the organic light emitting layer 124 to the upper portion of the second electrode 126.

The protective layer 128 and the encapsulation layer 130 are located on the second electrode 126. The protective layer 128 and the sealing layer 130 prevent oxygen and moisture penetration from the outside in order to prevent oxidation of the light emitting material and the electrode material. When the organic light emitting device is exposed to moisture or oxygen, a pixel shrinkage phenomenon in which the light emitting region is reduced or a dark spot in the light emitting region may occur. The passivation layer and / or the encapsulation layer may be composed of an inorganic film made of glass, metal, aluminum oxide (AlOx), or silicon (Si) material, or alternatively, It may be a laminated structure. The inorganic film serves to block penetration of moisture or oxygen, and the organic film serves to flatten the surface of the inorganic film. The reason why the encapsulation layer is formed of a plurality of thin film layers is to make the movement path of water or oxygen longer and more complicated than in the case of a single layer so as to make penetration of moisture / oxygen into the organic light emitting element difficult.

The OLED display 100 may further include a touch layer, a polarizing layer 160, a cover layer 170, and the like on the sealing layer 130. The touch panel / touch sensing electrode may be provided on the upper surface of the organic light emitting element (e.g., the upper surface of the sealing layer) for sensing the touch input of the user. If desired, a separate layer with touch sensing electrodes and / or other components associated with touch input sensing may be provided within the display device 100. The touch sensing electrode (e.g., the touch driving / sensing electrode) may be formed of a conductive material such as indium tin oxide, a carbon based material such as graphene, a carbon nanotube, a conductive polymer, or a hybrid material made of a mixture of various conductive / non- May be formed of a transparent conductive material. In addition, a metal mesh such as an aluminum mesh or a silver mesh may be used as the touch sensing electrode.

The display device 100 may include a polarization layer 160 to control display characteristics (e.g., external light reflection, color accuracy, brightness, etc.). The cover layer 170 may be used to protect the display device 100, and may be a cover glass, for example.

At least one support layer 180 may be provided at the bottom of the base layer 111 to increase the strength and / or rigidity at a particular portion of the display device 100. The support layer 180 is attached to the opposite surface (second surface) of the surface (first surface) on which the organic light emitting element is present on both surfaces of the base layer 111. The support layer 180 may be formed of a material selected from the group consisting of polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyethylene ether phthalate, polycarbonate, polyarylate, For example, a thin plastic film composed of a combination of polyether imide, polyether sulfonate, polyimide polyacrylate, and other suitable polymers. Other suitable materials that can be used to form the support layer 180 include thin films, dielectric foil, metal foil, polymer films including polymeric materials in combination with nanoparticles or microparticles, have.

In order to improve the bending and reliability of the display device 100 more easily, the configuration of the components in the bent portion 102 may be different from that in the flat central portion 101. Some of the components present in the central portion 101 are not disposed in the bending portion 102, or are provided in different thicknesses. For example, the support layer 180, the polarizing layer 160, the touch sensor layer, the color filter layer, and / or other components that interfere with the bending of the display device 100 may not be present in the curved portion 102 have. In addition, the organic light emitting devices may be provided in a different form from the flat portion 101 in consideration of the viewing angle characteristics of the curved portion 102.

The base layer 111 and the organic / inorganic functional layers 113, 115, 117 128, 130, and the like may be present although no pixel circuits are disposed in the non-display area I / A. In addition, the materials used in the constitution of the display area A / A may be arranged in the non-display area I / A for other purposes. For example, as shown in FIG. 2B, a metal 114 'used as a gate electrode of a display region TFT or a metal 118' used as a source / drain electrode may be used as a wiring, a non-display region I / As shown in FIG. Furthermore, the metal 122 'used as one electrode (for example, an anode) of the organic light emitting diode may be disposed in the non-display area I / A for the wiring and the electrode.

3 is an example for explaining the wiring arrangement of the display device.

3 is an enlarged view of a portion B in Fig. For convenience of explanation, only the pad region P and the wiring 118 'of the display device are shown in Fig. 3, and the functional layer (e.g., insulating layer, sealing layer, etc.) on the wiring 118' . The wiring 118 'may be formed of the same metal on the same layer as the source or drain electrode of the display area TFT.

Wirings (power supply wiring, signal wiring, etc.) near the outermost portion of the non-display region are generally covered with an inorganic layer such as an encapsulating layer. However, since the heights of the wirings are different from the heights of the wirings, the heights of the inorganic layers are different between the wirings and the wirings.

Such a height difference (step difference) may cause a defect such as a crack in the inorganic material layer. In addition, the generated defect becomes a moisture permeation point, and a case where moisture penetrates like an arrow (W ') appears. Moisture penetration adversely affects the reliability of the display device.

Figs. 4A to 4D show another example of the wiring arrangement of the display device. Fig.

4A is an enlarged view of a portion B in Fig. Only the pad region P of the display device, the wiring layers 118 'and 114' and the planarization layer 117 are simply shown in FIG. 4A and the planarization layer 117 and a part of the wiring 114 (For example, encapsulation layer) is omitted. Although FIGS. 4A-4D illustrate the planarization layer 117 over the wiring layer 118 ', this is only an example, and other insulation layers may be placed over the wiring layer 118'. The wiring layer 118 'and the planarization layer 117 have the positional relationship shown in Fig. 2B.

In order to reduce the problem described with reference to FIG. 3, the planarization layer 117 for eliminating steps due to the presence or absence of wiring is applied to the wiring section design of FIG. 4A. That is, since the planarization layer 117 covers the upper portion of the wiring layer 118 'in the S1 section and the S2 section, the step corresponding to the presence or absence of the wiring layer disappears. Therefore, a crack due to a step difference can be prevented when the inorganic material layer such as an encapsulating layer is coated on the structure.

In S3, there is no planarization layer 117. This is because moisture can propagate along the organic layer constituting the planarization layer 117, so that the planarization layer 117 is cut off to prevent moisture transmission. Accordingly, in the section S3, the wiring layer 118 'is not present and the other metal layer 114' functions as a wiring layer.

The wiring layer 114 'in the S3 section is provided on a layer different from the wiring layer 118' in the S1 / S2 section. The wiring layer 114 'in the S3 section is connected to the wiring layer 118' in the S1 / S2 section through a contact hole or directly connected thereto. As a result, the S3 section is a kind of wire jumping section. Therefore, the driving voltage. An electrical signal or the like is applied to the connection interface (pad or the like) of the pad region P and is transmitted along the wiring layer 118 'in the S1 / S3 section and along the other wiring layer 114' in the S2 section .

However, a weak point has also been found in the above-described wiring part step difference compensation and wiring jumping structure. Hereinafter, the vulnerability will be described with reference to FIGS. 4B to 4D. The inventors found an organic material 120 'that should have been removed, but not yet, in the S3 section (the flattening layer 117 disconnecting section, the wiring jumping section). Such an organic material 120 'may also be referred to as an organic residual film.

The inventors have found that the organic remainder 120 'can be generated in a planarization layer patterning (forming a cut-off section S3) and / or a bank 120 patterning process through a photolithography process. For example, in the case of patterning the bank 120 by the photolithography process as shown in FIG. 4B, the bank forming material 120 applied to the entire area must be left only in the necessary area on the display area side (one direction) And all the other side (direction 1 ') should be removed. However, since the height of the planarization layer 117 is relatively high as compared with other layers, exposure and / or development may not be sufficient in the cut-off section S3. In this case, the residual film 120 'may remain as shown in FIG. 4C. Since the above-described residual film 120 'is an organic material, it can be connected to the planarization layer 117, which is an organic material, and can be a penetration path for moisture. The moisture permeation path formed as described above can be expressed as shown in FIG. 4D.

Fig. 4A is a wiring structure for improving the vulnerability of the structure shown in Fig. 3, but since the structure of Fig. 4A still has a possibility of moisture permeation through the wiring portion, the inventors of the present invention invented a better wiring portion moisture permeation prevention structure.

5A to 5D are views showing a display device according to an embodiment of the present invention.

Fig. 5A is an enlarged view of a portion B in Fig. 1, and shows an embodiment in which a wiring portion moisture permeation prevention structure is applied. Only the pad region P of the display device, the wirings 118 'and 114', the planarization layer 117 and the reflective layer 123 are shown merely in FIG. 5A and the planarization layer 117, And the functional layer (for example, encapsulation layer) on the reflective layer 123 are omitted. 5A to 5D, the planarization layer 117 is shown on the wiring 118 ', but this is merely an example, and other insulating layers may be placed on the wiring 118'. The wirings 114 'and 118' and the planarization layer 117 have the positional relationship shown in FIG. 2B. Here, the wiring is a path through which power or various signals are transmitted, and is made of a conductive material such as metal. Hereinafter, embodiments in which the wirings 118 'and 114' are power supply wirings are described. But the spirit of the present invention is not limited thereto. When the wirings 118 'and 114' are power supply wirings, the wirings shown in Fig. 5A may be V _SS , V _REF , and V _DD wirings from the left.

5A includes a display area having a pixel circuit associated with one or more pixels and a non-display area having power lines 118 'and 114' connected to the pixel circuits inactive area). The non-display area may be disposed around the display area. That is, the non-display area may be adjacent to one or more sides of the display area.

The non-display area may include a first section S1, a second section S2, and a third section S3. The first section S1 and the second section S2 are sections in which the organic layer 117 covering the power supply line is present and the third section S3 is a section in which the first section S1 and the second section S2 are formed. 2 section S2, and there is no organic layer 117 covering the power supply lines 118 'and 114'. The organic material layer 117 may cover the entire upper surface of the wiring in the first section S1 and / or the second section S2, or may cover only the edge portion of the wiring.

Spatially explaining the first section S1 to the third section S3 is that the first section S1 extends from the display area in the direction toward the third section S3, (S2) extends in the direction from the third section (S3) toward the outermost of the non-display area. The display device may further include an encapsulation layer covering the upper portion of the display area and the non-display area to prevent penetration of moisture, oxygen, and the like. Accordingly, the sealing layer 130 may be disposed on the power supply lines 118 'and 114' and the planarization layer 117. The encapsulation layer 130 may not completely cover the outer edge of the display device. In this case, the encapsulation layer 130 may include all of the first section S1 and the third section S3, 2 section (S2).

The wirings 118 'and 114' extend from the connection interface (pad or the like) of the pad region P through the first section S1, the second section S2 and the third section S3 in the direction of the display region do. Here, the power supply line 118 'of the first section S1 and the second section S2 may be a metal layer formed on the same layer. Further, the power source wiring 118 'of the first section S1 and the second section S2 may be formed of the same material as the source electrode or the drain electrode of the thin film transistor (TFT) included in the pixel circuit Source / drain metal). Meanwhile, the power supply wiring 114 'of the third section S3 may be a metal layer formed on a layer different from the power supply wiring 118' of the first section S1 and the second section S2. For example, the power supply wiring 114 'of the third section S3 may be the same material (gate metal) as the gate electrode of the thin film transistor (TFT) included in the pixel circuit.

The reflective layer 123 may be positioned in the third section S3. At this time, the reflective layer 123 may be arranged to occupy at least a part of the third section S3. The reflective layer 123 is located above the wiring 114 'of the third section S3. The positional relationship between the reflective layer 123 and the other layer is shown in Figs. 5B to 5D. The reflective layer 123 is a structure for improving the moisture permeation vulnerability described in FIG. That is, the reflective layer 123 is formed on the organic layer (for example, the planarization layer 117) covering the power supply line 118 'of the first section S1 and the power supply line 118 ') In order to reduce the residual film remaining between the organic layers. The reflective layer 123 may be formed of a metal layer having a high reflectance (for example, an anode electrode material). The anode electrode may be formed of a plurality of metal layers. For example, when a metal such as silver (Ag) having a high reflectance is used as an anode, a transparent metal such as ITO (Indium Tin Oxide) is stacked on and under the electrode to prevent corrosion and reduce resistance to form a multi-layer structure An anode electrode may be formed.

When the reflective layer 123 is present, the amount of light concentrated on the reflective layer 123 due to the reflective layer 123 in the photolithography process increases, so that exposure and development can be sufficiently performed. Therefore, the organic matter (bank material, etc.) in the flattening layer cutting interval (S2 section) can be removed as much as possible. As a result, the organic film is minimized, and the moisture propagated through the organic film can be suppressed.

5B is a cross-sectional view taken along line 1-1 'of FIG. 5A. Fig. 5B shows a cross section of the area without wiring. As shown, the reflective layer 123 may be placed in a section S3 where the flattening layer is broken. At this time, the reflective layer 123 does not cover the entire section S3 where the flattening layer is broken. However, in other embodiments, the reflective layer 123 may ride up the side of the planarization layer 117 to cover at least a portion of the edge of the planarization layer 117. In this case, the reflective layer 123 covers the entire section S3 in which the flattening layer is broken.

The sealing layer 130 may not completely cover a portion of the planarization layer outside the display device. However, the encapsulation layer 130 completely covers the section where the reflective layer is disposed.

5C is a cross-sectional view taken along line 2-2 'of FIG. 5A. Referring to FIG. 5C, the wirings 118 'and 114' connected to the pixel circuit include a first portion L1 formed on the first layer; And a second portion L2 formed on the second layer different from the first layer and connected to the first portion L1. The second portion L2 may be a metal layer lower in layer than the first portion L1. For example, the first portion L1 may be the same material as the source electrode or the drain electrode of the thin film transistor (TFT) included in the pixel circuit, and the second portion L2 may be a thin film transistor May be the same material as the gate electrode of the thin film transistor (TFT).

The second portion L2 may be in the middle of the first portion L1. Accordingly, the first portion L1 can be divided into two small portions sandwiching the second portion L2. That is, the first portion L1 and the second portion L2 may be arranged in a wiring jumping structure. The first portion L1 and the second portion L2 may be electrically connected through a contact hole. Alternatively, the first portion L1 and the second portion L2 may be directly connected to each other by removing a portion of the insulating layer 115 between the two portions.

At least a portion of the first portion L1 may be covered with a planarization layer 117 and a reflective layer 123 may be disposed on the second portion L2. The reflective layer 123 may be the same material as the anode electrode of the organic light emitting diode included in the pixel circuit. In a particular embodiment, when the reflective layer 123 rides up the side of the planarization layer 117 to cover at least a portion of the edge of the planarization layer 117, may also be located on at least a portion of at least a portion of the surface (11).

5D is a sectional view taken along line 3-3 'of FIG. 5A. 5D shows a region where the wiring 114 'is present and a region where the wiring 114' is not present in the planarization layer cutout period S3. In this region, the first portions L1 and 118 'of the wiring are not seen and only the second portions L2 and 114' of the wiring are shown.

While the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to these embodiments, and various modifications may be made without departing from the scope of the present invention. Therefore, the embodiments disclosed herein are for the purpose of describing rather than limiting the technical spirit of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, and may be technically variously interlocked and driven by one of ordinary skill in the art and that each embodiment may be implemented independently of one another, . The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

Claims (16)

A display region having pixel circuits associated with one or more pixels; And
And a non-display area having a power supply wiring connected to the pixel circuit,
The non-
A first section and a second section in which an organic layer covering the power supply wiring is present,
And a third section between the first section and the second section, wherein the third section has no organic layer covering the power supply wiring. The method according to claim 1,
Wherein the first section extends in a direction from the display area toward the third section,
And the second section is a section extending in a direction from the third section to the outermost part of the non-display area. The method according to claim 1,
Wherein the power wiring of the first section and the power section of the second section are metal layers formed on the same layer. The method of claim 3,
Wherein the power wiring of the first section and the power section of the second section are the same material. The method of claim 3,
Wherein the power wiring of the first section and the second section is the same material as the source electrode or the drain electrode of the thin film transistor (TFT) included in the pixel circuit. The method of claim 3,
And the power wiring of the third section is a metal layer formed on a layer different from the power wiring of the first section and the second section. The method of claim 3,
And the power supply wiring in the third section is the same material as the gate electrode of the thin film transistor (TFT) included in the pixel circuit. The method according to claim 1,
And a reflective layer disposed on at least a part of the third section. 9. The method of claim 8,
Wherein the reflective layer is a metal layer provided to reduce a residual film remaining between an organic layer covering the power wiring of the first section and an organic layer covering the power wiring of the second section. The method according to claim 1,
Further comprising an encapsulation layer covering all of the first section and the third section and at least a part of the second section. A pixel circuit; And
And a wiring connected to the pixel circuit,
The above-
A first portion formed on the first layer, a second portion formed on the second layer different from the first layer and connected to the first portion,
Wherein at least a portion of the first portion is covered with a planarization layer and an upper portion of the second portion is provided with a reflective layer, 12. The method of claim 11,
Wherein the first portion is divided into two small portions sandwiching the second portion. 12. The method of claim 11,
And the first portion and the second portion are electrically connected through a contact hole. 12. The method of claim 11,
And the second portion is on a lower layer than the first portion. 12. The method of claim 11,
Wherein the reflective layer is also disposed on at least a portion of at least a portion of the first portion. 12. The method of claim 11,
The first portion is the same material as the source electrode or the drain electrode of the thin film transistor (TFT) included in the pixel circuit,
The second portion is the same material as the gate electrode of the thin film transistor (TFT) included in the pixel circuit,
Wherein the reflective layer is the same material as the anode electrode of the organic light emitting diode included in the pixel circuit.

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