KR102650513B1 - Organic light emitting display device - Google Patents

Abstract

This specification discloses an organic light emitting display device. The organic light emitting display device includes a base layer including a display area in which an array of pixels is arranged and a non-display area surrounding the display area, a thin film transistor disposed in the display area on the base layer, and an upper layer of the thin film transistor. a planarization layer disposed on the thin film transistor to planarize an upper portion of the thin film transistor, an organic light emitting element disposed on the planarization layer, a bank disposed on the remaining area excluding the light emitting area on the organic light emitting element, and the non-display area of the base layer. It may include a power wire that is disposed and delivers power used to drive the pixel, and a partial area of the power wire may be covered with an inorganic layer, and the remaining area except for the partial area may not be covered with an inorganic layer.

Description

Organic light emitting display device {ORGANIC LIGHT EMITTING DISPLAY DEVICE}

This specification relates to an organic light emitting display device.

Video display devices, which display various information on a screen, are a core technology of the information and communication era and are developing to be thinner, lighter, more portable, and more high-performance. Accordingly, organic light emitting display devices that display images by controlling the amount of light emitted from organic light emitting elements are receiving attention.

Organic light-emitting devices are self-luminous devices that use a thin light-emitting layer between electrodes and have the advantage of being able to be made into thin films. A typical organic light emitting display device has a structure in which a pixel driving circuit and an organic light emitting element are formed on a substrate, and the light emitted from the organic light emitting element passes through the substrate or barrier layer to display an image.

Recently, as organic light emitting display devices have progressed in miniaturization and higher resolution, the required wiring has increased, but the space to place the wiring has become scarce. In this situation, securing space for various elements, including electrical wiring, has become an important task. Furthermore, ways to streamline the arrangement of various parts and elements are also being studied. These studies are mainly conducted for new designs and UI/UX, and are also conducted to reduce the area outside the display device.

The purpose of this specification is to propose an outer structure of an organic light emitting display device. The tasks of this specification are not limited to the tasks mentioned above, and other tasks not mentioned can be clearly understood by those skilled in the art from the description below.

An organic light emitting display device is provided according to an embodiment of the present specification. The organic light emitting display device includes a base layer including a display area in which an array of pixels is arranged and a non-display area surrounding the display area, a thin film transistor disposed in the display area on the base layer, and an upper layer of the thin film transistor. a planarization layer disposed on the thin film transistor to planarize an upper portion of the thin film transistor, an organic light emitting element disposed on the planarization layer, a bank disposed on the remaining area excluding the light emitting area on the organic light emitting element, and the non-display area of the base layer. It may include a power wire that is disposed and delivers power used to drive the pixel, and a partial area of the power wire may be covered with an inorganic layer, and the remaining area except for the partial area may not be covered with an inorganic layer.

Specific details of other embodiments are included in the detailed description and drawings.

Embodiments of the present specification can provide a structure and design that increases the area of the outer wiring without the risk of arc discharge. In addition, embodiments of the present specification can provide a display device with a further reduced bezel width. Accordingly, embodiments of the present specification can provide a display device with improved reliability and aesthetics. The effects according to the embodiments of the present specification are not limited to the contents exemplified above, and further various effects are included in the present specification.

1 shows an example display device that may be included in an electronic device.
Figure 2 is a cross-sectional view schematically showing a display area and a non-display area of a display device according to an embodiment of the present specification.
3A and 3B are diagrams illustrating part of the process of forming the outer portion of an organic light emitting display device.
4A to 4D are diagrams showing the outer portion of an organic light emitting display device according to an embodiment of the present specification.

The advantages and features of the present specification and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms. The present embodiments only serve to ensure that the disclosure of the present invention is complete and that common knowledge in the technical field to which the present invention pertains is not limited. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

The shape, size, ratio, angle, number, etc. disclosed in the drawings for explaining the embodiments of the present specification are illustrative, and the present specification is not limited to the matters shown. Like reference numerals refer to like elements throughout the specification. Additionally, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. When 'includes', 'has', 'consists of', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. In cases where a component is expressed in the singular, the plural is included unless specifically stated otherwise. When interpreting a component, it is interpreted to include the margin of error even if there is no separate explicit description.

In the case of a description of a positional relationship, for example, if the positional relationship of two parts is described as 'on top', 'on the top', 'on the bottom', 'next to', etc., 'immediately' Alternatively, there may be one or more other parts placed between the two parts, unless 'directly' is used. When an element or layer is referred to as “on” another element or layer, it includes instances where the other layer or other element is directly on top of or interposed between the other elements. When a component is described as being “connected,” “coupled,” or “connected” to another component, that component may be directly connected or connected to that other component, but there are no other components between each component. It should be understood that may be “interposed” or that each component may be “connected,” “combined,” or “connected” through other components.

Although first, second, etc. are used to describe various elements, these elements are not limited by these terms. These terms are merely used to distinguish one component from another. Accordingly, the first component mentioned below may also be the second component within the technical spirit of the present invention.

The size and thickness of each component shown in the drawings are shown for convenience of explanation, and the present invention is not necessarily limited to the size and thickness of the components shown. Hereinafter, various embodiments of the present invention will be described in detail with reference to the attached drawings.

1 shows an example display device that may be included in an electronic device.

Referring to FIG. 1, the display device 100 includes at least one active area, and an array of pixels is formed in the display area. One or more inactive areas may be placed around the display area. That is, the non-display area may be adjacent to one or more sides of the display area. In Figure 1, the non-display area surrounds a rectangular display area. However, the shape of the display area and the shape/arrangement of the non-display area adjacent to the display area are not limited to the example shown in FIG. 1. The display area and the non-display area may have a shape suitable for the design of an electronic device equipped with the display device 100. Exemplary shapes of the display area include pentagon, hexagon, circle, oval, etc.

Each pixel within the display area may be associated with a pixel circuit. The pixel circuit may include one or more switching transistors and one or more driving transistors on a backplane. Each pixel circuit may be electrically connected to a gate line and a data line to communicate with one or more driving circuits, such as a gate driver and a data driver, located in the non-display area.

As shown in FIG. 1, the driving circuit may be implemented as a thin film transistor (TFT) in the non-display area. This driving circuit may be referred to as a gate-in-panel (GIP). Additionally, some components, such as data driver ICs, are mounted on separate printed circuit boards and circuit films such as FPCB (flexible printed circuit board), COF (chip-on-film), TCP (tape-carrier-package), etc. It can be combined with a connection interface (pad/bump, pin, etc.) placed in the non-display area. The non-display area is bent along with the connection interface, so that the printed circuit (COF, PCB, etc.) can be located behind the display device 100.

The display device 100 may further include a power controller that supplies or controls the supply of various voltages or currents to a pixel circuit, data driver, gate driver, etc. These power controllers are also called power management integrated circuits (PMIC: Power Management IC). Additionally, as shown in the example, the display device 100 may also include voltage lines that supply a high-level voltage (VDD), a low-level voltage (VSS), and a reference voltage (VRFE) related to driving the pixel circuit.

Meanwhile, the display device 100 may further include various additional elements for generating various signals or driving pixels within the display area. Additional elements for driving the pixel may be an inverter circuit, a multiplexer, an electrostatic discharge circuit, etc. The display device 100 may also include additional elements related to functions other than pixel driving. For example, the display device 100 may include additional elements that provide a touch detection function, a user authentication function (eg, fingerprint recognition), a multi-level pressure detection function, a tactile feedback function, etc. The above-mentioned additional elements may be located in the non-display area and/or in an external circuit connected to the connection interface.

Figure 2 is a cross-sectional view schematically showing a display area and a non-display area of a display device according to an embodiment of the present specification.

The illustrated display area (A/A) and non-display area (I/A) may be applied to at least a portion of the display area (A/A) and non-display area (I/A) depicted in FIG. 1 . Hereinafter, the display device will be described using an organic light emitting display device as an example.

In the case of an organic light emitting display device, the display area (A/A) includes thin film transistors (102, 104, 108), organic light emitting elements (112, 114, 116), and various functional layers on the base layer (101). are located Meanwhile, in the non-display area (I/A), various driving circuits (eg, GIP), electrodes, wiring, functional structures, etc. may be located on the base layer 101.

The base layer 101 supports various components of the organic light emitting display device 100. The base layer 101 may be formed of a transparent insulating material, such as glass, plastic, etc. The substrate (array substrate) is also referred to as a concept that includes devices and functional layers formed on the base layer 101, such as switching TFTs, driving TFTs, organic light emitting devices, and protective films.

A buffer layer 130 may be located on the base layer 101. The buffer layer is a functional layer to protect the thin film transistor (TFT) from impurities such as alkali ions leaking from the base layer 101 or lower layers. The buffer layer may be made of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof. The buffer layer 130 may include multi buffers and/or active buffers.

A thin film transistor is placed on the base layer 101 or buffer layer. A thin film transistor consists of a semiconductor layer (active layer), a gate insulator (gate insulator), a gate electrode, an interlayer dielectric layer (ILD), and source and drain electrodes sequentially stacked. Alternatively, the thin film transistor may have a gate electrode 104, a gate insulating layer 105, a semiconductor layer 102, and a source and drain electrode 108 arranged sequentially as shown in FIG. 2.

The semiconductor layer 102 may be made of polysilicon (p-Si), in which case a predetermined region may be doped with impurities. Additionally, the semiconductor layer 102 may be made of amorphous silicon (a-Si), or may be made of various organic semiconductor materials such as pentacene. Furthermore, the semiconductor layer 102 may be made of oxide.

The gate electrode 104 is made of various conductive materials, such as magnesium (Mg), aluminum (Al), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W), gold (Au), or alloys thereof. etc. can be formed.

The gate insulating layer 105 and the interlayer insulating layer (ILD) may be formed of an insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), and may also be formed of an insulating organic material. By selectively removing the gate insulating layer 105 and the interlayer insulating layer, a contact hole exposing the source and drain regions may be formed.

The source and drain electrodes 108 are formed in a single-layer or multi-layer shape using an electrode material on the gate insulating layer 105 or the interlayer insulating layer (ILD). If necessary, a protective layer 109 made of an inorganic insulating material may cover the source and drain electrodes 108.

A planarization layer 107 may be located on the thin film transistor. The planarization layer 107 protects the thin film transistor and planarizes its top. The planarization layer 107 may be formed in various forms, and may be formed of an organic insulating film such as BCB (Benzocyclobutene) or acryl, or an inorganic insulating film such as silicon nitride (SiNx) or silicon oxide (SiOx). Various modifications are possible, such as being formed as a single layer or consisting of double or multiple layers.

The organic light emitting device may have a first electrode 112, an organic light emitting layer 114, and a second electrode 116 arranged sequentially. That is, the organic light emitting device includes a first electrode 112 formed on the planarization layer 107, an organic light emitting layer 114 located on the first electrode 112, and a second electrode located on the organic light emitting layer 114 ( 116).

The first electrode 112 is electrically connected to the drain electrode 108 of the driving thin film transistor through a contact hole. When the organic light emitting display device 100 is a top emission type, the first electrode 112 may be made of an opaque conductive material with high reflectivity. For example, the first electrode 112 may be formed of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or an alloy thereof. . The first electrode 112 may be an anode of an organic light emitting diode.

The bank 110 is formed in the remaining area excluding the light emitting area. Accordingly, the bank 110 has a bank hole that exposes the first electrode 112 corresponding to the light emitting area. The bank 110 may be made of an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), or an organic insulating material such as BCB, acrylic resin, or imide resin.

The organic light emitting layer 114 is located on the first electrode 112 exposed by the bank 110 . The organic light-emitting layer 114 may include a light-emitting layer, an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer. The organic light-emitting layer may be composed of a single light-emitting layer structure that emits a single light, or may be composed of a plurality of light-emitting layers that emit white light.

The second electrode 116 is located on the organic light emitting layer 114. When the organic light emitting display device 100 is a top emission type, the second electrode 116 is a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). By being formed of a material, the light generated in the organic light emitting layer 114 is emitted to the upper part of the second electrode 116. The second electrode 116 may be a cathode of an organic light emitting diode.

An encapsulation layer 120 is positioned on the second electrode 116. The encapsulation layer 120 prevents oxygen and moisture from penetrating from the outside to prevent oxidation of the light emitting material and electrode material. When an organic light-emitting device is exposed to moisture or oxygen, pixel shrinkage, which reduces the light-emitting area, may occur, or dark spots may appear within the light-emitting area. The encapsulation layer is composed of an inorganic film made of glass, metal, aluminum oxide (AlOx), or silicon (Si)-based material, or an organic film 122 and an inorganic film 121-1, 121-2. This may be an alternating stacked structure. At this time, the inorganic film (121-1, 121-2) serves to block the penetration of moisture or oxygen, and the organic film 122 serves to flatten the surface of the inorganic film (121-1, 121-2). do. If the encapsulation layer is formed of multiple thin film layers, the movement path of moisture or oxygen becomes longer and more complicated than in the case of a single layer, making it difficult for moisture/oxygen to penetrate into the organic light emitting device.

The barrier film 140 may be positioned on the encapsulation layer 120 to encapsulate the entire base layer 101. The barrier film 140 may be a retardation film or an optically isotropic film. If the barrier film has optical isotropic properties, the incident light passing through the barrier film is transmitted without phase delay. Additionally, an organic or inorganic film may be further positioned on the upper or lower surface of the barrier film to block penetration of external moisture or oxygen.

An adhesive layer 145 may be positioned between the barrier film 140 and the encapsulation layer 120. The adhesive layer 145 adheres the encapsulation layer 120 and the barrier film 140. The adhesive layer 145 may be a heat-curing or natural-curing type adhesive. For example, the adhesive layer 145 may be made of a material such as barrier pressure sensitive adhesive (B-PSA).

A touch panel (film), a polarizing film, a top cover, etc. may be further positioned on the barrier film 140.

Although a pixel circuit is not disposed in the non-display area (I/A), a base layer 101 and organic/inorganic functional layers (130, 105, 107, 120, etc.) may be present. Additionally, materials used to construct the display area (A/A) may be disposed in the non-display area (I/A) for other purposes. For example, the metal 104' used as the gate electrode of the display area TFT, or the metal 108' used as the source/drain electrode may be placed in the non-display area (I/A) for wiring and electrodes. there is. Furthermore, the metal 112', which was used as an electrode (eg, anode) of the organic light emitting diode, may be disposed in the non-display area (I/A) for wiring and electrodes.

The base layer 101, buffer layer 130, gate insulating layer 105, planarization layer 107, etc. of the non-display area (I/A) are the same as those described in the display area (A/A). The dam 190 is a structure that prevents the organic layer 122 from spreading too far into the non-display area (I/A). Various circuits and electrodes/wires disposed in the non-display area (I/A) may be made of the gate metal 104' and/or the source/drain metal 108'. At this time, the gate metal 104' is formed from the same material as the gate electrode of the TFT in the same process, and the source/drain metal 108' is formed from the same material as the source/drain electrode of the TFT in the same process.

For example, source/drain metal may be used as a power supply (e.g., base power supply (Vss)) wiring 108'. At this time, the power wiring 108' is connected to the metal layer 112', and the cathode 116 of the organic light emitting diode is connected to the source/drain metal 108' and the metal layer 112' to provide power. can be supplied. The metal layer 112' may contact the power wiring 108', extend along the sidewall of the outermost planarization layer 107, and contact the cathode 116 at the top of the planarization layer 107. The metal layer 112' may be a metal formed from the same material and in the same process as the anode 112 of the organic light emitting diode.

The organic light emitting display device may suffer damage, such as cracks, to the inorganic layer in the outer area (E) due to external impact. If the damage is large, it may immediately become apparent as a malfunction or screen error. However, when minute damage occurs, even if the organic light emitting display device initially operates normally, the damage spreads through the inorganic layer over time, ultimately resulting in poor moisture permeability and/or poor operation.

Although damage to the outside of the organic light emitting display device is an important factor that ultimately affects the reliability and lifespan of the product, there is no way to detect damage such as cracks in advance, making quality control of the organic light emitting display device difficult. There was this. Accordingly, the present inventors have designed a method and structure that can detect damage to the outer portion of an organic light emitting display device in advance.

3A and 3B are diagrams illustrating part of the process of forming the outer portion of an organic light emitting display device.

As shown in FIG. 2 , the display area (all or part) of the organic light emitting display device is covered with the encapsulation layer 120 . At this time, the inorganic layers 121-1 and 121-2 are not formed to the outermost edge of the organic light emitting display device. This is because some areas of the non-display area must be exposed for placement of interfaces such as pads, and when multiple display devices are manufactured on the mother board and then cut (e.g., scribed) into each display device. Since impact/damage may be applied to the inorganic layer, the inorganic layer is not covered in an area that is a certain distance (margin) away from the edge.

In order to avoid placing an inorganic layer in a specific area, a mask is used in the process of depositing the inorganic layer. The mask has an open area that allows the deposition material to pass and a closed area that blocks the deposition material. The closed area is located on one side of the organic light emitting display device over an area designed not to place an inorganic layer.

Referring to FIG. 3A, which is an enlarged view of the Accordingly, the inorganic layer is not deposited in the area corresponding to the closed area (MSK_RIB) of the mask among the non-display areas. (In the actual process, the inorganic material may not be completely blocked in the area below the mask's closed area (MSK_RIB) in the vertical direction.) The closed area (MSK_RIB) is covered by a metal layer (power wiring (VSS)) for a certain section (M1). ), because arc discharge (ARC) can occur between the closed area of the mask (MSK_RIB) and the metal layer beneath it. It is known that the arc discharge occurs when the charge accumulated on the surface film of the mask leaks to the metal on the display device. The arc discharge (ARC) causes serious product damage. Therefore, in many processes, a design rule is applied that forces the metal layer not to be placed in the area of the display device vertically corresponding to the closed area (MSK_RIB) of the mask.

Additionally, in the non-display area of the organic light emitting display device, there is a section (M2) where not only the inorganic layer but also all functional layers that are at risk of damage from impact cannot be placed. The section M2 is a section spaced a certain distance from the outermost edge EL of the organic light emitting display device, and is also called a scribing margin.

Therefore, section A including M1 and M2 is a section in which power wiring cannot be formed. Researchers/developers encountered many difficulties in reducing the bezel of the organic light emitting display device due to the section required for the non-display area (M1, M2) and/or the section (A) where power wiring cannot be placed. Attempts by researchers/developers to reduce resistance by broadening the width of external power wiring have similarly encountered difficulties. Accordingly, the present inventors sought a way to more effectively design/implement the outer part of an organic light emitting display device and derived a new structure.

4A to 4D are diagrams showing the outer portion of an organic light emitting display device according to an embodiment of the present specification.

FIGS. 4A to 4C illustrate a process of covering an inorganic layer (eg, 121-1 and 121-2 in FIG. 2) during the manufacturing process of an organic light emitting display device according to an embodiment of the present specification. Figure 4 is a cross-sectional view of the organic light emitting display device. For convenience of explanation, only a portion of the non-display area (I/A) and the power wiring 408 of the organic light emitting display device is shown in FIGS. 4A to 4C .

The present inventors derived an outer wiring design structure that could not be implemented in the past due to the possibility of arc discharge. Specifically, the inventors found a structure that allows power wiring to be placed in the area corresponding to the closed area (MSK_RIB) of the mask.

The wiring structure includes adding a second part 408b across the border to the mask closed area MSK_RIB in several strands to the first part 408a of the power wiring extending around the display area as shown in FIG. 4A or 4C. will be. The fact that the second portion 408b is composed of several separate strands (branches, protrusions) means that although the total area of the metal layer under the mask (especially the closed area) is the same, the metal layer has the shape of a single closed figure. This is because the total capacitance value is smaller when it is separated into several smaller pieces than when it is. For example, even if it is a metal whose total area under the mask is A (=A1+A2+A3), rather than being composed of a single figure with an area of A (case 1), it is made up of three shapes with areas of A1, A2, and A3, respectively. The amount of charge charged between the mask and the mask (case 2) is small. Therefore, the possibility of arc discharge in case 2 is further reduced.

Accordingly, the organic light emitting display device to which the above structure is applied has a base including a display area (A/A) in which an array of pixels is arranged and a non-display area (I/A) surrounding the display area (A/A). layer 101; It is disposed in the non-display area (I/A) of the base layer ((A/A)) and includes a power line 408 that delivers power (Vdd, Vref, Vss, etc.) used to drive the pixel. can do. At this time, the power wiring 408 includes a first part 408a extending around the display area A/A and an outermost edge EL of the base layer 101 from the first part 408a. ) may include a second portion 408b extending toward. The second part 408b may be shaped like a branch (protrusion) extending from the first part 408a toward the outer edge (EL) of the display device. Here, the power wire 408 is the power wire located on the outermost side (closer to EL) among a plurality of power wires (VDD, VREF, VSS, etc.). For example, the power wiring 408 may be a wiring that delivers base power (Vss) to the cathode 116 of the organic light emitting diode (OLED) included in the pixel. At this time, the power wiring 408 may further include a bad wiring connected to a pad (PAD) disposed in the non-display area.

FIG. 4A shows part It is shaped like a branch extending horizontally to the right. If the first part 408a is a power wiring located at the bottom of the organic light emitting display device 100 (based on FIG. 1), the first part 408a extends in the horizontal direction and the second part 408b ) will be a branch shape extending vertically downward. In this way, the first part 408a and the second part 408b may extend in different directions.

The second part 408b is a part provided to suppress arc discharge generated in the mask used in the process of covering the upper part of the power wiring 408 with an inorganic layer. As described above, the second part 408b is divided into multiple parts (i.e., small parts) corresponding to the mask (open area and closed area) to reduce the amount of charge.

In the organic light emitting display device, an inorganic layer is deposited through a mask as shown in FIGS. 4A to 4C, so a partial area of the power wiring 408 is covered with an inorganic layer, and the remaining area except for the partial area is not covered with an inorganic layer. That is, the portion of the power wiring 408 that is covered by the mask closure area (MSK_RIB) may not be covered with the inorganic layer. For example, the portion covered with the inorganic layer may be the entire area of the first part 408a and a partial area of the second part 408b of the power wiring. Additionally, the portion not covered by the inorganic layer may be the remaining region of the second portion 408b excluding the partial region. In order to make the second part 408b small (thin), the line width W2 of the second part 408b may be smaller than the line width W1 of the first part 408a.

A buffer layer 107' corresponding to the boundary between the open area and the closed area of the mask may be placed on the second portion 408b. The buffer layer 107' may prevent the mask MSK_RIB from directly contacting the second part 408b or the organic light emitting display device. At this time, the buffer layer 107' may be formed of the same material as the planarization layer 107 of the display area A/A and in the same process.

The second portion 408b may extend only to a point spaced apart from the outermost edge EL of the base layer 101 by a predetermined distance M2. At this time, the predetermined distance M2 may be a margin required in the process of cutting the outermost edge EL.

FIG. 4D is a cross-sectional view of an organic light emitting display device to which the power wiring structure shown in FIG. 4A or FIG. 4C is applied. The components shown in FIG. 4D are the same as those described in FIG. 2. However, the power wiring 408 extends further toward the outermost edge compared to the structure in FIG. 2, and a buffer layer 107' is placed on top of it.

Meanwhile, as a modified embodiment of FIG. 4A, as shown in FIG. 4C, the power wiring 408 is at the end of the direction in which the second part 408b extends toward the outermost edge EL of the base layer 101. It may further include a continuous third part 408c. The third part 408c may be seen as a shape in which the branches (protrusions) forming the second part 408b are gathered together on the outside. This third part 408c has a shape that can further reduce the resistance by expanding the area of the power wiring. As shown, the third part 408c may appear to extend parallel to the first part 408a. The line width W3 of the third portion 408c may be the same as or different from the line width W1 of the first portion 408a.

The outer design described above can provide a structure that increases the area of the outer wiring without the risk of arc discharge. In addition, the design and structure can respond to the same resistance requirement by making the width of the first portion 408a narrower, so the bezel width can be implemented to be narrower. Accordingly, a display device with improved product reliability and aesthetics can be provided through the power wiring structure.

Although embodiments of the present specification have been described in detail with reference to the attached drawings, the present specification is not necessarily limited to these embodiments, and various modifications may be made without departing from the technical spirit thereof. Accordingly, the embodiments disclosed in this specification are not intended to limit the technical idea of the present invention, but rather to explain it, and the scope of the technical idea of the present invention is not limited by these embodiments. Each feature of the various embodiments of the present invention can be partially or entirely combined or combined with each other, and can be technically linked and driven in various ways by those skilled in the art, and each embodiment can be performed independently of each other or together in a related relationship. It may be implemented. The scope of protection of the present invention should be interpreted in accordance with the claims below, and all technical ideas within the equivalent scope should be construed as being included in the scope of rights of the present invention.

Claims (13)

a base layer including a display area in which an array of pixels is arranged and a non-display area surrounding the display area;
a thin film transistor disposed in the display area on the base layer;
a planarization layer disposed on the thin film transistor to planarize an upper portion of the thin film transistor;
an organic light emitting device disposed on the planarization layer;
a bank disposed in an area other than a light emitting area on the planarization layer;
a power line disposed in the non-display area of the base layer and transmitting power used to drive the pixel; and
an inorganic layer disposed on the organic light emitting element and covering the entire display area and a portion of the non-display area;
An organic light emitting display device, wherein a partial area of the power wiring is covered with the inorganic layer, and the remaining area except for the partial area is not covered with the inorganic layer. According to claim 1,
The power wiring is,
A first part extending around the display area and a second part extending from the first part toward an outermost edge of the base layer,
An organic light emitting display device wherein the entire area of the first part and a partial area of the second part of the power wiring are covered with the inorganic layer, and the remaining area of the second part is not covered with the inorganic layer. According to clause 2,
The thin film transistor is
a gate electrode disposed on the base layer;
a gate insulating layer disposed on the gate electrode;
a semiconductor layer disposed on the gate insulating layer; and
a source electrode and a drain electrode disposed on the gate insulating layer and covering a portion of the semiconductor layer;
An organic light emitting display device comprising: According to clause 3,
The organic light emitting display device further includes a protective layer covering the source electrode and the drain electrode. According to clause 4,
The organic light emitting device,
a first electrode disposed on the planarization layer and electrically connected to the drain electrode through a contact hole;
an organic light-emitting layer disposed on the first electrode; and
An organic light emitting display device comprising a second electrode disposed on the organic light emitting layer. According to clause 5,
The organic light emitting display device further includes an encapsulation layer disposed on the second electrode and covering the display area and the non-display area. According to clause 6,
The encapsulation layer is
An organic light emitting display device in which the inorganic layers and the organic layers are alternately stacked. According to clause 7,
The inorganic layer is
An organic light emitting display device that covers the base layer from the outermost edge except for a margin required in a process of cutting the outermost edge. According to clause 8,
The organic light emitting display device further includes a barrier film disposed on the encapsulation layer to encapsulate the base layer. According to clause 9,
The power wiring is
An organic light emitting display device formed in the same process using the same material as the source electrode and the drain electrode. According to claim 10,
The power wiring is
An organic light emitting display device, which is a wire connected to a metal layer extending along the outermost side of the planarization layer to transmit base power to the cathode of the organic light emitting device. According to claim 11,
The power wiring is,
The organic light emitting display device further includes a pad wire connected to a pad disposed in the non-display area. According to claim 12,
The power wiring is
The organic light emitting display device further includes a buffer layer disposed on an upper portion of the second portion corresponding to a boundary between an open region and a closed region of a mask used in the process of covering the inorganic layer on the power wiring.