KR102637116B1 - Organic light emitting display device - Google Patents

Abstract

This specification discloses an organic light emitting display device. The organic light emitting display device includes conductive wires extending from a connection interface toward a display area; It includes an organic material layer that covers an edge of the conductive wire and extends along the conductive wire, wherein the organic material layer has at least one disconnected section disconnected in the extending direction, and each of the at least one disconnected section is a protective layer. can be covered

Description

Organic light emitting display device {ORGANIC LIGHT EMITTING DISPLAY DEVICE}

This specification relates to an organic light emitting display device.

An organic light emitting display device is a device that displays images by controlling the amount of light emitted from an organic light emitting element. Organic light-emitting devices (organic light-emitting diodes, etc.) are self-luminous devices that use a thin light-emitting layer between electrodes and have the advantage of being able to be made into thin films. A typical organic light emitting display device has a structure in which a pixel driving circuit and an organic light emitting element are formed on a substrate, and the light emitted from the organic light emitting element passes through the substrate or barrier layer to display an image.

Because organic light emitting display devices are implemented without a separate light source device, they can be manufactured thinner and lighter than existing display devices such as liquid crystal displays (LCDs). Therefore, the organic light emitting display device can be easily implemented as a flexible, bendable, or foldable display device and can be designed in various forms.

Various display devices, including organic light emitting display devices, block the penetration and/or propagation of moisture in various ways because performance, such as long-term reliability, may deteriorate when moisture permeation occurs. In particular, various structures are being researched/applied to prevent moisture from penetrating and spreading to the outer part.

The purpose of this specification is to propose a moisture permeability reduction structure for an organic light emitting display device. The tasks of this specification are not limited to the tasks mentioned above, and other tasks not mentioned can be clearly understood by those skilled in the art from the description below.

An organic light emitting display device is provided according to an embodiment of the present specification. The organic light emitting display device includes conductive wires extending from a connection interface toward a display area; It includes an organic material layer that covers an edge of the conductive wire and extends along the conductive wire, wherein the organic material layer has at least one disconnected section disconnected in the extending direction, and each of the at least one disconnected section is a protective layer. can be covered

The disconnection section is provided to block the propagation of moisture through the organic layer. At this time, the length of the disconnection section may be 20 micrometers to 50 micrometers.

The organic layer may be made of the same material as the planarization layer that covers the top of the thin film transistor.

The protective layer is provided to prevent the conductive wire from being etched. The protective layer may be formed of the same material as the anode electrode of the organic light emitting diode included in the pixel circuit of the display area.

The conductive wire may be formed of the same material as the source electrode or drain electrode of the thin film transistor (TFT) included in the pixel circuit of the display area.

The conductor may be a conductor that transmits low-level power (VSS) to a pixel circuit in the display area. At this time, the conductive wire surrounds the entire display area. Meanwhile, the conductor may be a conductor that transmits low-level power (VDD) or initialization power (VINI) to the pixel circuit of the display area.

The conductor passes through a bent section bent at a predetermined angle, and in this case, the conductor may have a stress-reducing shape in the bent section.

The conductive wire may have a jumping structure through a conductor of a lower layer, and in this case, the jumping structure may be provided between the bent section and the display area.

Specific details of other embodiments are included in the detailed description and drawings.

Embodiments of the present specification can provide a display device in which problems of moisture permeation and moisture spread due to external damage are improved. Accordingly, embodiments of the present specification can provide an organic light emitting display device with improved reliability. The effects according to the embodiments of the present specification are not limited to the contents exemplified above, and further various effects are included in the present specification.

1 shows an example display device that may be included in an electronic device.
Figure 2 is a cross-sectional view schematically showing a display area and a non-display area of a display device according to an embodiment of the present specification.
3A and 3B are exemplary views showing the outer structure of an organic light emitting display device according to an embodiment of the present specification.
4A to 4C are diagrams showing the outer structure of an organic light emitting display device according to another embodiment of the present specification.

The advantages and features of the present specification and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms. The present embodiments only serve to ensure that the disclosure of the present invention is complete and that common knowledge in the technical field to which the present invention pertains is not limited. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

The shape, size, ratio, angle, number, etc. disclosed in the drawings for explaining the embodiments of the present specification are illustrative, and the present specification is not limited to the matters shown. Like reference numerals refer to like elements throughout the specification. Additionally, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. When 'includes', 'has', 'consists of', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the plural is included unless specifically stated otherwise. When interpreting a component, it is interpreted to include the margin of error even if there is no separate explicit description.

In the case of a description of a positional relationship, for example, if the positional relationship of two parts is described as 'on top', 'on the top', 'on the bottom', 'next to', etc., 'immediately' Alternatively, there may be one or more other parts placed between the two parts, unless 'directly' is used. When an element or layer is referred to as “on” another element or layer, it includes instances where the other layer or other element is directly on top of or interposed between the other elements. When a component is described as being “connected,” “coupled,” or “connected” to another component, that component may be directly connected or connected to that other component, but there are no other components between each component. It should be understood that may be “interposed” or that each component may be “connected,” “combined,” or “connected” through other components.

Although first, second, etc. are used to describe various elements, these elements are not limited by these terms. These terms are merely used to distinguish one component from another. Accordingly, the first component mentioned below may also be the second component within the technical spirit of the present invention.

The size and thickness of each component shown in the drawings are shown for convenience of explanation, and the present invention is not necessarily limited to the size and thickness of the components shown. Hereinafter, various embodiments of the present invention will be described in detail with reference to the attached drawings.

1 shows an example display device that may be included in an electronic device.

Referring to FIG. 1, the display device 100 includes at least one active area, and an array of pixels is formed in the display area. One or more inactive areas may be placed around the display area. That is, the non-display area may be adjacent to one or more sides of the display area. In Figure 1, the non-display area surrounds a rectangular display area. However, the shape of the display area and the shape/arrangement of the non-display area adjacent to the display area are not limited to the example shown in FIG. 1. The display area and the non-display area may have a shape suitable for the design of an electronic device equipped with the display device 100. Exemplary shapes of the display area include pentagon, hexagon, circle, oval, etc.

Each pixel within the display area may be associated with a pixel circuit. The pixel circuit may include one or more switching transistors and one or more driving transistors on a backplane. Each pixel circuit may be electrically connected to a gate line and a data line to communicate with one or more driving circuits, such as a gate driver and a data driver, located in the non-display area.

As shown in FIG. 1, the driving circuit may be implemented as a thin film transistor (TFT) in the non-display area. This driving circuit may be referred to as a gate-in-panel (GIP). Additionally, some components, such as data driver ICs, are mounted on separate printed circuit boards and circuit films such as FPCB (flexible printed circuit board), COF (chip-on-film), TCP (tape-carrier-package), etc. It can be combined with a connection interface (PAD, bump, pin, etc.) placed in the non-display area. The non-display area is bent together with the connection interface, so that the printed circuit (COF, PCB, etc.) can be located behind the display device 100.

The display device 100 may further include various additional elements for generating various signals or driving pixels within the display area. Additional elements for driving the pixel may be an inverter circuit, a multiplexer, an electrostatic discharge circuit, etc. The display device 100 may also include additional elements related to functions other than pixel driving. For example, the display device 100 may include additional elements that provide a touch detection function, a user authentication function (eg, fingerprint recognition), a multi-level pressure detection function, a tactile feedback function, etc. The above-mentioned additional elements may be located in the non-display area and/or in an external circuit connected to the connection interface.

One or more edges of the display device 100 may be bent away from the central portion. Since one or more portions of the display device 100 may be bent, the display device 100 may be defined as a substantially flat portion and a bent portion. That is, a portion of the display device 100 (eg, a wiring portion between the pad (PAD) and the display area) is bent at a predetermined angle, and this portion may be referred to as a bent portion. The bent portion includes a bent section that is actually bent to a predetermined bending radius. Although this is not always the case, the central portion of the display device 100 may be substantially flat and the corner portions may be curved portions.

When the non-display area is bent, the non-display area becomes invisible or only minimally visible from the front of the display device. Among the non-display areas, a portion visible from the front of the display device may be obscured by a bezel. The bezel may be a stand-alone structure, or may be formed from a housing or other suitable element. Some of the non-display areas visible from the front of the display may be hidden under an opaque mask layer such as black ink (e.g., a polymer filled with carbon black). This opaque mask layer may be provided on various layers (touch sensor layer, polarizing layer, cover layer, etc.) included in the display device 100.

The bent portion may bend outward from the central portion with a bending angle θ and a bending radius R about the bending axis. The size of each curved portion need not be the same. Additionally, the bending angle θ around the bending axis and the radius of curvature R from the bending axis may vary for each bending portion.

Figure 2 is a cross-sectional view schematically showing a display area and a non-display area of a display device according to an embodiment of the present specification.

The illustrated display area (A/A) and non-display area (I/A) may be applied to at least a portion of the display area (A/A) and non-display area (I/A) depicted in FIG. 1 . Hereinafter, the display device will be described using an organic light emitting display device as an example.

In the case of an organic light emitting display device, the display area (A/A) includes thin film transistors (102, 104, 108), organic light emitting elements (112, 114, 116), and various functional layers on the base layer (101). are located Meanwhile, in the non-display area (I/A), various driving circuits (eg, GIP), electrodes, wiring, functional structures, etc. may be located on the base layer 101.

The base layer 101 supports various components of the organic light emitting display device 100. The base layer 101 may be formed of a transparent insulating material, such as glass, plastic, etc. The substrate (array substrate) is also referred to as a concept that includes devices and functional layers formed on the base layer 101, such as switching TFTs, driving TFTs, organic light emitting devices, and protective films.

A buffer layer 130 may be located on the base layer 101. The buffer layer is a functional layer to protect the thin film transistor (TFT) from impurities such as alkali ions leaking from the base layer 101 or lower layers. The buffer layer may be made of silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof. The buffer layer 130 may include multi buffers and/or active buffers.

A thin film transistor is placed on the base layer 101 or buffer layer. A thin film transistor consists of a semiconductor layer (active layer), a gate insulator (gate insulator), a gate electrode, an interlayer dielectric layer (ILD), and source and drain electrodes sequentially stacked. Alternatively, the thin film transistor may have a gate electrode 104, a gate insulating layer 105, a semiconductor layer 102, and a source and drain electrode 108 arranged sequentially as shown in FIG. 2.

The semiconductor layer 102 may be made of polysilicon (p-Si), in which case a predetermined region may be doped with impurities. Additionally, the semiconductor layer 102 may be made of amorphous silicon (a-Si), or may be made of various organic semiconductor materials such as pentacene. Furthermore, the semiconductor layer 102 may be made of oxide.

The gate electrode 104 is made of various conductive materials, such as magnesium (Mg), aluminum (Al), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W), gold (Au), or alloys thereof. etc. can be formed.

The gate insulating layer 105 and the interlayer insulating layer (ILD) may be formed of an insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), and may also be formed of an insulating organic material. By selectively removing the gate insulating layer 105 and the interlayer insulating layer, a contact hole exposing the source and drain regions may be formed.

The source and drain electrodes 108 are formed in a single-layer or multi-layer shape using an electrode material on the gate insulating layer 105 or the interlayer insulating layer (ILD). If necessary, a passivation layer 109 made of an inorganic insulating material may cover the source and drain electrodes 108.

A planarization layer 107 may be located on the thin film transistor. The planarization layer 107 protects the thin film transistor and planarizes its top. The planarization layer 107 may be formed in various forms, and may be formed of an organic insulating film such as BCB (Benzocyclobutene) or acryl, or an inorganic insulating film such as silicon nitride (SiNx) or silicon oxide (SiOx). Various modifications are possible, such as being formed as a single layer or consisting of double or multiple layers.

The organic light emitting device may have a first electrode 112, an organic light emitting layer 114, and a second electrode 116 arranged sequentially. That is, the organic light emitting device includes a first electrode 112 formed on the planarization layer 107, an organic light emitting layer 114 located on the first electrode 112, and a second electrode located on the organic light emitting layer 114 ( 116).

The first electrode 112 is electrically connected to the drain electrode 108 of the driving thin film transistor through a contact hole. When the organic light emitting display device 100 is a top emission type, the first electrode 112 may be made of an opaque conductive material with high reflectivity. For example, the first electrode 112 may be formed of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or an alloy thereof. . The first electrode 112 may be an anode of an organic light emitting diode.

The bank 110 is formed in the remaining area excluding the light emitting area. Accordingly, the bank 110 has a bank hole that exposes the first electrode 112 corresponding to the light emitting area. The bank 110 may be made of an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), or an organic insulating material such as BCB, acrylic resin, or imide resin.

The organic light emitting layer 114 is located on the first electrode 112 exposed by the bank 110 . The organic light-emitting layer 114 may include a light-emitting layer, an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer. The organic light-emitting layer may be composed of a single light-emitting layer structure that emits a single light, or may be composed of a plurality of light-emitting layers that emit white light.

The second electrode 116 is located on the organic light emitting layer 114. When the organic light emitting display device 100 is a top emission type, the second electrode 116 is a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). By being formed of a material, the light generated in the organic light emitting layer 114 is emitted to the upper part of the second electrode 116. The second electrode 116 may be a cathode of an organic light emitting diode.

Encapsulation layer 120 is positioned on second electrode 116. The encapsulation layer 120 prevents oxygen and moisture from penetrating from the outside to prevent oxidation of the light emitting material and electrode material. When an organic light-emitting device is exposed to moisture or oxygen, pixel shrinkage, which reduces the light-emitting area, may occur, or dark spots may appear within the light-emitting area. The encapsulation layer is composed of an inorganic film made of glass, metal, aluminum oxide (AlOx), or silicon (Si)-based material, or an organic film 122 and an inorganic film 121-1, 121-2. This may be an alternating stacked structure. At this time, the inorganic film (121-1, 121-2) serves to block the penetration of moisture or oxygen, and the organic film 122 serves to flatten the surface of the inorganic film (121-1, 121-2). do. If the encapsulation layer is formed of multiple thin film layers, the movement path of moisture or oxygen becomes longer and more complicated than in the case of a single layer, making it difficult for moisture/oxygen to penetrate into the organic light emitting device.

A barrier film may be placed on the encapsulation layer 120 to encapsulate the entire base layer 101. The barrier film may be a retardation film or an optically isotropic film. At this time, an adhesive layer may be positioned between the barrier film and the encapsulation layer 120. The adhesive layer adheres the encapsulation layer 120 and the barrier film. The adhesive layer 145 may be a heat-curing or natural-curing type adhesive. For example, the adhesive layer may be composed of a material such as Barrier pressure sensitive adhesive (B-PSA).

Although pixel circuits and light emitting devices are not disposed in the non-display area (I/A), a base layer 101 and organic/inorganic functional layers (130, 105, 107, 120, etc.) may be present. Additionally, materials used to construct the display area (A/A) may be disposed in the non-display area (I/A) for other purposes. For example, the same metal 104' as the gate electrode of the display area TFT, or the same metal 108' as the source/drain electrodes may be disposed in the non-display area I/A for wiring or electrodes. Furthermore, the same metal 112' as one electrode (eg, anode) of the organic light emitting diode may be disposed in the non-display area (I/A) for wiring and electrodes.

The base layer 101, buffer layer 130, gate insulating layer 105, planarization layer 107, etc. of the non-display area (I/A) are the same as those described in the display area (A/A). The dam 190 is a structure that prevents the organic layer 122 from spreading too far into the non-display area (I/A). Various circuits and electrodes/wires disposed in the non-display area (I/A) may be made of the gate metal 104' and/or the source/drain metal 108'. At this time, the gate metal 104' is formed from the same material as the gate electrode of the TFT in the same process, and the source/drain metal 108' is formed from the same material as the source/drain electrode of the TFT in the same process.

For example, source/drain metal may be used as a power supply (e.g., base power supply (V _SS )) wiring 108'. At this time, the power wiring 108' is connected to the metal layer 112', and the cathode 116 of the organic light emitting diode is connected to the source/drain metal 108' and the metal layer 112' to provide power. can be supplied. The metal layer 112' may contact the power wiring 108', extend along the outermost sidewall of the planarization layer 107, and contact the cathode 116 at the top of the planarization layer 107. The metal layer 112' may be a metal layer formed from the same material and in the same process as the anode 112 of the organic light emitting diode.

3A and 3B are exemplary views showing the outer structure of an organic light emitting display device according to an embodiment of the present specification.

FIG. 3A is an enlarged view of area A of FIG. 1, in which only specific conductive lines are shown and other conductive lines (data lines, gate signal lines, etc.) are omitted. Meanwhile, Figure 3a illustrates a bendable section B that can be bent. The bending section is as described in Figure 1. Meanwhile, the encapsulation layer 120 of the structure described in FIG. 2 may cover part or all of area A. Figure 3b shows that the encapsulation layer 120 covers part of area A.

The conductive wire 108' extends from the connection interface PAD toward the display area. At this time, the conductor 108' may be formed on a single layer, or the conductors 108' and 104' on two layers may be connected as shown.

The conductor 108' may be a conductor that transmits low-level power (V _SS ) to the pixel circuit of the display area. In this case, the conductive wire 108' may surround the entire display area. Alternatively, the conductor 108' may be a conductor that delivers low-level power (V _DD ) or initialization power (V _INI ) to the pixel circuit of the display area. In the example of FIG. 3A, the conductor on the left is a conductor that transmits low-level power (V _SS ), and the conductor on the right is a conductor that transmits initialization power (V _INI ).

The conductive wire 108' may be formed of the same metal on the same layer as the source or drain electrode of the thin film transistor (TFT) in the display area. At this time, the conductor 108' may be a metal (so-called Ti/Al/Ti) having a multilayer structure in which titanium (Ti), aluminum (Al), and titanium (Ti) are stacked in that order. 3B shows a gate insulating layer 105 under conductor 108', this is only one implementation example, and other layers may be placed under conductor 108'.

The conductor 108' composed of titanium (Ti), aluminum (Al), and titanium (Ti) has a risk of being etched by exposure to an etchant in subsequent processes, such as the anode formation process of an organic light emitting diode. . (In particular, aluminum is less susceptible to etching than titanium.) Since this unnecessary etching may cause conductor defects, the edge area of the conductor 108' is covered with an organic layer 107. The organic layer 107 prevents damage (etching) to the side surface of the conductive wire 108' in the above-described process. At this time, the organic layer 107 may be formed of the same material and in the same process as the planarization layer on the top of the thin film transistor (TFT) for manufacturing efficiency.

The inventors discovered several vulnerabilities in the above-described conductor protection structure. One of them is moisture diffusion through the organic material layer 107 for protecting the conducting wire. During the manufacturing and/or transportation of the display device, damage (e.g. cracks) may occur on the outer portion due to impact. When the cracked portion is exposed to the outside, moisture penetrates into the display device through the crack. I do it. The infiltrating moisture may spread through the organic material layer 107 covering the conductive wire 108' disposed on the outer portion, causing corrosion of the conductive wire or malfunction of the display device. The inventors recognized this problem and designed a structure to prevent moisture diffusion through the organic layer.

4A to 4C are diagrams showing the outer structure of an organic light emitting display device according to another embodiment of the present specification.

The organic light emitting display device adopts an improved structure that isolates the organic material layer 207 to block the moisture propagation path. FIG. 4A is an enlarged view of portion A of FIG. 1, and for convenience of explanation, only specific conductors (eg, power wiring) are shown, and other conductors (data lines, gate signal lines, etc.) are omitted. Additionally, not all types of conductors 208' are shown. In Figure 4a, a bendable section (B) that can be bent is illustrated. Meanwhile, the encapsulation layer 120 of the structure described in FIG. 2 may cover part or all of area A. At this time, the encapsulation layer may only cover the lower part of the bent section (B), and the encapsulating layer may not be provided in the bent section (B) where there is a risk of damage due to bending.

The conductive wire 208' extends from the connection interface PAD toward the display area. At this time, the conductor 208' may be formed on a single layer. Alternatively, the conductor 208' may be connected to the conductor 208' in the upper layer and the conductor 204' in the lower layer in a jumping structure at a specific portion as shown. The jumping structure may be provided between the curved section B and the display area. The jumping structure is connected through a contact hole or directly connected. Accordingly, the driving voltage, electrical signal, etc. are applied to the connection interface (PAD) and transmitted along the first conductor layer 208' and, in a specific section, along the second conductor layer 204'.

The conductor 208' may be a conductor that transmits low-level power (V _SS ) to the pixel circuit of the display area. In this case, the conductive wire 208' may surround the entire display area. Alternatively, the conductor 208' may be a conductor that transmits low-level power (V _DD ) or initialization power (V _INI ) to the pixel circuit of the display area. In the example of FIG. 4A , the conductor on the left is a conductor that transmits low-level power (V _SS ), and the conductor on the right is a conductor that transmits initialization power (V _INI ).

The conductive wire 208' may be formed of the same material on the same layer as the source or drain electrode of the thin film transistor (TFT) in the display area. At this time, the conductor 208' may be a metal layer having a multi-layer structure (so-called Ti/Al/Ti) in which titanium (Ti), aluminum (Al), and titanium (Ti) are stacked in that order. Meanwhile, the material 204' in another layer of the conductive wire may be the same material as the gate electrode of the thin film transistor (TFT) included in the pixel circuit. 4B is shown with gate insulating layer 205 under conductor 208', this is only one implementation example, and other layers may be placed under conductor 208'.

The organic material layer 207 extends along the conductive wire 208' and covers the edges of the conductive wire 208'. The organic material layer 207 may cover the entire upper surface of the conductive wire 208', but may only cover the edge without covering the middle part of the upper rim. The organic layer 207 may be made of the same material as the planarization layer that covers the top of the thin film transistor in the display area.

The organic layer 207 has at least one disconnected section S disconnected in the extending direction. The disconnection section (S) is provided to block the propagation of moisture through the organic material layer 207, as illustrated in FIG. 3 . The disconnection section (S) may be provided on one type or several types of conductors as needed. The length of the disconnection section (S) may be a distance at which moisture transfer is effectively blocked, for example, 20 micrometers (μm) to 50 micrometers (μm).

As shown in FIG. 4B, each of the disconnected sections S may be covered with a protective layer 212'. The protective layer 212' is. It is provided to perform the function performed by the organic material layer 207 removed from the corresponding section, that is, to prevent the conductor from being etched in a subsequent process. Accordingly, the protective layer 212' may be another etch stopper or may be made of the same material as the anode electrode of the organic light emitting diode included in the pixel circuit of the display area. That is, the protective layer 212' may be left in the disconnection section S during the anode patterning process. As shown in FIG. 4C, the protective layer 212' covers the side portion of the conductive wire 208' so that it is not exposed. In particular, when the conductor 208' has a titanium (208'-1)/aluminum (208'-2)/titanium (208'-3) laminate structure, the aluminum (208') is protected by the protective layer (212'). -2) Etching is prevented.

Through this structure, the organic layer involved in the spread of moisture is minimized. That is, looking at the exemplary structure shown in FIG. 4A, even if moisture penetrates into one point of the organic layer 207, the moisture does not spread far through the organic layer 207 due to the disconnection. Accordingly, the reliability of the organic light emitting display device according to an embodiment of the present specification can be further improved by preventing defects and/or quality deterioration due to moisture permeation.

The conductive wire 208' may extend while passing through a bending section B bent at a predetermined angle. At this time, the conductor 208' has a stress-reducing shape in the bent section B. In FIG. 4A, the conductor 208' is illustrated as having a diamond-shaped stress reduction shape in the bending section B.

A coating layer may be provided to protect the wires 408' in the bent section B from moisture and other foreign substances. The coating layer has sufficient flexibility to be used in the bending section (B). The coating layer may be coated to a thickness determined to adjust the neutral plane in the bending section (B). More specifically, the thickness added to the coating layer 470 in the bend section B may move the plane of the conductor and/or wiring structure closer to the neutral plane. Additionally, the coating layer is preferably a material that cures with low energy in a limited time so that the components underneath are not damaged during the curing process. As an example, the coating layer may be formed of an acrylic resin that is curable by light (eg, UV light, visible light, etc.). Additionally, in order to suppress the penetration of moisture through the coating layer, one or more moisture absorbing materials (getter) may be mixed into the coating layer.

Although embodiments of the present specification have been described in detail with reference to the attached drawings, the present specification is not necessarily limited to these embodiments, and various modifications may be made without departing from the technical spirit thereof. Accordingly, the embodiments disclosed in this specification are not intended to limit the technical idea of the present invention, but rather to explain it, and the scope of the technical idea of the present invention is not limited by these embodiments. Each feature of the various embodiments of the present invention can be partially or entirely combined or combined with each other, and can be technically linked and driven in various ways by those skilled in the art, and each embodiment can be performed independently of each other or together in a related relationship. It may be implemented. The scope of protection of the present invention should be interpreted in accordance with the claims below, and all technical ideas within the equivalent scope should be construed as being included in the scope of rights of the present invention.

Claims (14)

A conductor disposed in the non-display area and extending from the connection interface toward the display area; and
It includes an organic layer covering an edge of the conductor along the direction in which the conductor extends,
The organic material layer has at least one disconnection section that is disconnected in the extending direction and exposes an edge of the conductor,
An organic light emitting display device, wherein each of the at least one disconnection sections is covered with a protective layer. According to claim 1,
The disconnection section is provided to block the propagation of moisture through the organic material layer. According to claim 1,
The protective layer is provided to prevent the side of the conductive wire from being etched. According to clause 3,
The protective layer is an organic light emitting display device formed of the same material as an anode electrode of an organic light emitting diode included in a pixel circuit of the display area. According to claim 1,
An organic light emitting display device wherein the length of the disconnection section is 20 micrometers to 50 micrometers. According to claim 1,
The conductive wire is a conductive wire that transmits low-level power (V _SS ) to a pixel circuit in the display area. According to clause 6,
The conductive wire surrounds the entire display area of the organic light emitting display device. According to claim 1,
The conductive wire is a conductive wire that delivers low-level power (V _DD ) or initialization power (V _INI ) to a pixel circuit in the display area. According to claim 1,
The conductive wire is formed of the same material as the source electrode or drain electrode of a thin film transistor (TFT) included in the pixel circuit of the display area. According to clause 9,
The organic material layer is made of the same material as the planarization layer that covers the top of the thin film transistor. According to claim 1,
The conductive wire passes through a curved section bent at a predetermined angle. According to claim 11,
The conductive wire has a stress-reducing shape in the bent section. According to claim 11,
The conductive wire has a jumping structure through a conductor of a lower layer. According to claim 13,
The jumping structure is provided between the curved section and the display area.

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