KR101603145B1 - Method of fabricating for dual panel type organic electro-luminescent device - Google Patents

Abstract

The present invention relates to an organic electroluminescent device, and more particularly, to an encapsulation of an organic electroluminescent device.

A feature of the present invention is to encapsulate and adhere the first and second substrates through a frit pattern made of an inorganic material and form a concave-convex metal pattern in contact with the frit pattern on the first substrate.

By sealing the first and second substrates more tightly therewith, contaminants such as moisture and gas can be separated from the outside by the spaced spaces between the first and second substrates, It is possible to prevent penetration into the interspace.

Therefore, deterioration of the organic light emitting diode can be prevented and the lifetime of the OLED can be extended. Also, since the first and second substrates are firmly attached to each other to reduce the defect rate generated after the covalent bonding, the overall cost and material cost loss can be reduced and the production yield can be improved.

Further, in the firing process of the frit pattern through the metal pattern, it is possible to prevent the adverse effect on the display elements in the display area by reflecting the laser and the infrared rays irradiated to the outside of the frit pattern, The reflectivity of the laser and infrared ray is further improved, thereby alleviating the degree of firing by the region of the frit pattern.

An organic electroluminescent element, a frit pattern, a metal pattern,

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing an organic electroluminescent device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and more particularly to encapsulation of an organic electroluminescent device.

Until recently, CRT (cathode ray tube) was mainly used as a display device. However, in recent years, flat panel displays such as a plasma display panel (PDP), a liquid crystal display device (LCD), and an organic electro-luminescence device (OLED) Display devices have been widely studied and used.

Of the above flat panel display devices, an organic electroluminescent element (hereinafter referred to as OLED) is a self-luminous element and can be lightweight and thin because it does not require a backlight used in a liquid crystal display device which is a non-light emitting element.

The liquid crystal display device is superior to the liquid crystal display device in viewing angle and contrast ratio, is advantageous in terms of power consumption, can be driven by DC low voltage, has a high response speed, and is resistant to external shocks It has advantages.

Particularly, since the manufacturing process is simple, it is advantageous in that the production cost can be saved more than the conventional liquid crystal display device.

OLEDs having such characteristics are largely divided into a passive matrix type and an active matrix type. In a passive matrix type, a device is formed in a matrix form while crossing signal lines, whereas an active matrix type is a pixel A thin film transistor which is a switching element for on / off switching on / off.

In recent years, passive matrix type has many limitations such as resolution, power consumption and lifetime, and active matrix type OLED capable of realizing high resolution and large screen is actively being studied.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic cross-sectional view of a general active matrix type OLED. FIG.

As shown, the OLED 10 comprises a first substrate 1 and a second substrate 2 facing the first substrate 1, and the first and second substrates 1, And the marginal portion of the sealing member 20 is sealed and bonded together through a seal pattern 20.

In more detail, a driving thin film transistor DTr is formed for each pixel region on the first substrate 1, a first electrode 3 connected to each driving thin film transistor DTr, An organic light emitting layer 5 for emitting light of a specific color and an organic light emitting layer 5 for forming a second electrode 7 are formed on the upper portion of the electrode 3.

The organic light emitting layer 5 displays red, green, and blue colors. As a general method, separate organic materials 5a, 5b, and 5c emitting red, green, and blue light are patterned for each pixel.

The first and second electrodes 3 and 7 and the organic light emitting layer 5 formed therebetween form an organic light emitting diode. In this case, the OLED 10 having such a structure constitutes the first electrode 3 as the anode and the second electrode 7 as the cathode.

On the inner surface of the second substrate 2, a moisture absorbent (not shown) for blocking moisture from the outside is formed.

On the other hand, the seal pattern 20 of the OLED 10 is usually made of a sealant made of an organic or polymeric material. Such a sealant has a structure in which a gap between a molecule and a molecule is sufficiently large The size is becoming.

Therefore, as time passes, the contaminant seal pattern 20, such as moisture or gas, permeates into the OLED 10, and when the contaminants are present inside the sealed OLED 10 The characteristics of the organic electroluminescent diode (E) sensitive to moisture and oxygen are deformed.

That is, the contaminants infiltrated from the outside penetrate into the organic light emitting layer 5 of the organic electroluminescent diode E, so that the organic light emitting layer 5 may be deteriorated in the light emitting property of the organic light emitting layer 5 due to a contaminant source The lifetime of the organic light emitting layer 5 is shortened. In addition, black spots occur due to contamination of some areas.

Therefore, in order to solve such a problem, an OLED 10 has recently been proposed which forms a frit pattern composed of an inorganic material frit.

Such a frit pattern is much smaller than a sealant pattern of a sealant material in terms of preventing penetration of moisture from the outside due to its pore size being smaller than that of a water molecule due to its material properties. Therefore, the lifetime of the organic electroluminescent device Can be extended.

The frit pattern is fired by irradiating a laser and an infrared ray using a laser device or the like. At this time, the laser and the infrared rays are irradiated from the top of the substrate toward the frit pattern, And a difference in intensity in which infrared rays are irradiated.

In this way, depending on the difference in the intensity of the laser and infrared rays irradiated to the frit pattern, the degree of firing varies depending on the region of the frit pattern, resulting in deterioration of the combined power of the OLED.

That is, since the first and second substrates of the OLED are separated from each other and the edges of the OLED are sealed and attached together through the frit pattern, the degree of firing is varied for each region of the frit pattern, thereby causing defective separation of the first and second substrates Which leads to lower process yield and lower reliability of the OLED.

SUMMARY OF THE INVENTION It is a first object of the present invention to provide an organic electroluminescent device in which a contamination source can not penetrate into the inside.

A second object of the present invention is to prevent defective separation of the first and second substrates, and to improve process yield and reliability.

According to an aspect of the present invention, there is provided a display device including a first substrate on which a display region including a plurality of pixel regions and a non-display region surrounding the display region are defined, a second substrate facing the first substrate, A driving thin film transistor and an organic light emitting diode formed in the pixel region of the first substrate; A metal pattern formed on the non-display area of the first substrate, the metal pattern having a concavo-convex shape; And a frit pattern formed along an edge of the second substrate and in contact with the metal pattern, wherein the frit pattern is fired and hardened by a laser beam impingement, and the metal pattern reflects the laser beam The organic electroluminescent device has a function of preventing a laser beam from being irradiated to the display area.

Here, the metal pattern may have the same shape as the frit pattern and may be formed without interruption in the non-display region, or may have a cut-off portion at a corner of the non-display region. The driving TFT includes a semiconductor layer, And a source electrode and a drain electrode, wherein the organic light emitting diode is in contact with the drain electrode.

Here, the metal pattern is made of the same metal material as the source and drain electrodes, and a metal layer made of the same metal material as the gate electrode is formed under the metal pattern with the interlayer insulating film interposed therebetween.

Further, the frit pattern is made of frit which is an inorganic material.

The present invention also provides a method of manufacturing a display device, comprising: forming a driving thin film transistor and an organic light emitting diode in a display region of a first substrate defining a display region and a non-display region surrounding the display region; ; Forming the metal pattern in a concavo-convex shape; Forming a frit pattern along an edge of a second substrate facing the first substrate; Facing the first substrate and the second substrate so that the frit pattern corresponds to the concavo-convex shape of the metal pattern; And irradiating a laser beam corresponding to the frit pattern so that the frit pattern is bonded to the irregular shape of the metal pattern.

Here, the irregular shape is formed by exposing the metal pattern to an etching liquid and etching the metal pattern.

As described above, according to the present invention, the first and second substrates are sealed and attached together through a frit pattern made of frit which is an inorganic material, and in particular, a metal pattern The first and second substrates are sealed more tightly so that contaminants such as moisture and gas can be separated from the first substrate and the second substrate by the space between the first and second substrates, It is possible to prevent infiltration into the interspace between the electrodes.

Therefore, it is possible to prevent deterioration of the organic light emitting diode and prolong the lifetime of the OLED. Also, since the first and second substrates are firmly attached to each other to reduce the defect rate generated after the covalent bonding, it is possible to reduce the overall cost and material cost loss and improve the production yield.

Further, in the firing process of the frit pattern through the metal pattern, it is possible to prevent the adverse effect on the display elements in the display area by reflecting the laser and the infrared rays irradiated to the outside of the frit pattern, The reflectivity of the laser and the infrared ray is further improved, thereby alleviating the degree of firing by the region of the frit pattern.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.

2 is a cross-sectional view schematically showing an OLED according to an embodiment of the present invention.

The OLED 100 according to the present invention includes a first substrate 101 on which a driving and switching thin film transistor DTr and an organic light emitting diode E are formed, The first and second substrates 101 and 102 are spaced apart from each other. The edges of the first and second substrates 101 and 102 are sealed through a frit pattern 300, do.

A gate and a data line 206 (not shown) are formed in the display region AA of the first substrate 101 so as to intersect each other at the boundary of each pixel region P, (Not shown) is formed in parallel with a power supply line (not shown).

A switching and driving thin film transistor (not shown) (DTr) is formed in each of the plurality of pixel regions P to be described in more detail. Each of the pixel regions P in the display region AA of the first substrate 101 P is formed with a semiconductor layer 201 corresponding to a driving region DA and a switching region (not shown). The semiconductor layer 201 is made of silicon, and its central portion is composed of an active region 201a, And source and drain regions 201b and 201c doped with impurities at a high concentration on both sides of the region 201a.

A gate insulating layer 203 is formed on the semiconductor layer 201.

A gate wiring 206 extending in one direction from the gate electrode 205 corresponding to the active region 201a of the semiconductor layer 201 is formed in each pixel region P in the display region AA Respectively.

A first interlayer insulating film 207a is formed on the entire upper surface of the gate electrode 205, the gate wiring 206 and the first metal pattern 215. At this time, the first interlayer insulating film 207a and the gate insulating film 207b The first and second semiconductor layer contact holes 209a and 209b expose the source and drain regions 201b and 201c on both sides of the active region 201a.

The first and second semiconductor layer contact holes 209a and 209b are separated from each other on the first interlayer insulating film 207a including the first and second semiconductor layer contact holes 209a and 209b in each pixel region P, And source and drain electrodes 211 and 213 which are in contact with the source and drain regions 201b and 201c exposed through the source and drain regions 209a and 209b, respectively.

In each pixel region P, a drain contact hole (not shown) is formed to expose the drain electrode 213 over the first interlayer insulating film 207a exposed between the source and drain electrodes 211 and 213 and the two electrodes 211 and 213 A second interlayer insulating film 207b is formed.

At this time, the semiconductor layer 201 including the source and drain electrodes 211 and 213 and the source and drain regions 201b and 201c in contact with the electrodes 211 and 213 and the gate insulating film 201 formed on the semiconductor layer 201 The gate electrode 203 and the gate electrode 205 constitute a driving thin film transistor DTr.

Though not shown in the drawing, the switching thin film transistor (not shown) has the same structure as the driving thin film transistor DTr and is connected to the driving thin film transistor DTr.

The switching and driving thin film transistor (not shown) DTr is shown as an example of a top gate type in which the semiconductor layer 201 is a polysilicon semiconductor layer. As a variation thereof, the amorphous Or may be formed of a bottom gate type made of silicon nitride.

The first electrode 111, the organic light emitting layer 113 and the second electrode 115 constituting the organic electroluminescent diode E are sequentially formed on the second interlayer insulating film 207b, Respectively.

The first and second electrodes 111 and 115 and the organic light emitting layer 113 formed therebetween form an organic light emitting diode E.

The first electrode 111 is connected to the drain electrode 213 of the driving thin film transistor DTr.

Meanwhile, the OLED 100 is divided into a top emission type and a bottom emission type according to the transmission direction of the emitted light. Hereinafter, the bottom emission type will be described as an example of the present invention.

Accordingly, the first electrode 111 is preferably formed of indium-tin-oxide (ITO), which is a relatively high work function value, to serve as an anode electrode.

The second electrode 115 is made of aluminum (Al) or an aluminum alloy (AlNd), which is a metal material having a relatively low work function value, in order to serve as a cathode.

Accordingly, the light emitted from the organic light emitting layer 113 is driven by the lower light emitting method, which is emitted toward the first electrode 111.

A hole injection layer, a hole transporting layer, an emitting material layer, an electron transporting layer, and an electron transporting layer may be used to increase the efficiency of light emission. And may be composed of multiple layers of an electron transporting layer and an electron injection layer.

Therefore, when a predetermined voltage is applied to the first electrode 111 and the second electrode 115 according to the selected color signal, the OLED 100 can selectively supply the positive holes injected from the first electrode 111 and the holes injected from the second electrode 115, The excitons are transported to the organic light emitting layer 113 to form excitons. When the excitons transit from the excited state to the ground state, light is emitted and emitted in the form of visible light.

At this time, the emitted light passes through the transparent first electrode 111 and exits to the outside, so that the OLED 100 realizes an arbitrary image.

The first electrode 111 is formed for each pixel region P and a bank 221 is located between the first electrodes 111 formed for each pixel region P. [

That is, the banks 221 are formed in a matrix type of a grid structure as a whole on the substrate 101, and the first electrodes 111 are divided into the pixel regions P with the banks 221 as boundary portions for the respective pixel regions Respectively.

Particularly, in the process of attaching the first and second substrates 101 and 102, the edges of the first and second substrates 101 and 102 are sealed together through the frit pattern 300 as described above.

Thereby, the OLED 100 is encapsulated.

The frit pattern 300 is formed in a non-display area NA covering the edge of the display area AA for sealing the display area AA and preventing penetration of oxygen and moisture.

As described above, the OLED 100 of the present invention encapsulates and adheres the first and second substrates 101 and 102 through the frit pattern 300 made of an inorganic material, 101, 102 are sealed more tightly.

This allows a contamination source such as moisture or gas from the outside to penetrate into the space between the first and second substrates 101 and 102 apart from the outside by the space between the first and second substrates 101 and 102 Can be prevented.

Therefore, deterioration of the organic electroluminescent diode (E) can be prevented and the lifetime of the OLED (100) can be extended. Also, since the first and second substrates 101 and 102 are firmly attached to each other to reduce the defect rate generated after the cementation, the overall cost and material cost loss are reduced and the production yield is improved.

In particular, in the OLED of the present invention, the second metal pattern to be in contact with the frit pattern is formed into a concave-convex shape, and therefore, when the frit pattern 300 is cured, It is possible to prevent the driving and switching thin film transistor DTr (not shown) and the organic light emitting layer 113 provided in the region AA from being damaged.

Although the frit pattern 300 generally refers to a glass raw material in the form of a powder, in the present invention, a paste-like frit containing a laser or an infrared absorber, an organic binder, a filler for reducing a thermal expansion coefficient, And then cured.

Therefore, the frit pattern 300 is much smaller than water molecules in terms of the material properties thereof, and is far superior to the existing organic or polymer seal pattern (60 in FIG. 1) in terms of preventing moisture from penetrating from the outside, The lifetime of the organic electroluminescent diode E can be prolonged by preventing deterioration of the organic EL device.

Particularly, in the OLED 100 of the present invention, the frit pattern 300 of the frit pattern 300 is irradiated with laser and infrared rays (not shown) along the longitudinal direction in the firing process for curing the frit pattern 300 As the intensity difference is generated, the firing degree of the frit pattern 300 is prevented from varying by region.

Here, referring to FIG. 3, the first and second substrates 101 and 102 sealed and joined together by the frit pattern 300 will be described in more detail.

FIG. 3 is an enlarged cross-sectional view of a non-display area where the frit pattern of FIG. 2 is formed.

The frit pattern 300 is formed in the non-display area NA of the first and second substrates 101 and 102 covering the edge of the display area AA, , The metal patterns 215 and 219 are provided under the frit pattern 300. [

The frit pattern 300 is in contact with the metal patterns 215 and 219 in the first substrate 101 and in direct contact with the inner surface of the second substrate 102 in the second substrate 102.

The metal patterns 215 and 219 are formed of a first metal pattern 215 and a second metal pattern 219. The first metal pattern 215 is electrically connected to the gate wiring 206 and / And may be made of any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), and moly titanium (MoTi) May have a single layer structure, or may have a double layer or triple layer structure as two or more metal materials.

The second metal pattern 219 is made of the same metal material as the source and drain electrodes 211 and 213 of each pixel region P and may be formed of a metal such as aluminum (Al), aluminum alloy (AlNd) (Cu), a copper alloy, molybdenum (Mo), and moly titanium (MoTi), and may have a single layer structure or two or more metal materials having a double layer structure or a triple layer structure.

A first metal pattern 215 is formed on the gate insulating layer 203 formed on the entire surface of the first substrate 101 in the non-display area NA of the first substrate 101, A first interlayer insulating film 207a is formed on the entire surface of the first substrate 101 and a second interlayer insulating film 207b is formed on the first interlayer insulating film 207a corresponding to the first metal pattern 215. [ Two metal patterns 219 are formed.

At this time, the first metal pattern 215 may be omitted.

The second metal pattern 219 is formed by a laser irradiated on the frit pattern 300 and a drive and switching thin film transistor DTr (not shown) provided in the display area AA by infrared rays during a firing process for hardening the frit pattern 300. [ (Not shown) and the organic luminescent layer 113 can be prevented from being damaged.

That is, the firing process of the frit pattern 300 is performed by irradiating a laser and an infrared ray (not shown). The laser beam and the infrared ray (not shown) , And can be irradiated to the outside thereof.

In this case, the laser and the infrared ray (not shown) have a very large energy, and the driving and switching thin film transistors (DTr in FIG. 2, not shown) provided in the display area AA and the laser and infrared It may affect the organic luminescent layer (113 in Fig. 2) to cause degradation of the device characteristics and lowering of the luminescent efficiency of the organic luminescent layer (113 in Fig. 2).

Therefore, in order to prevent the laser and the infrared ray (not shown) irradiated outside the frit pattern 300 from being reflected to adversely affect the display elements in the display area AA, the driving and switching thin film formed in the display area AA The same metal material in which the source and drain electrodes 211 and 213 are formed together when forming the source and drain electrodes 211 and 213 of the transistor (DTr in FIG. 2, not shown) is wider than the width of the frit pattern 300 And the second metal pattern 219 is formed to have a width.

Particularly, the second metal pattern 219 of the present invention is formed of a concave-convex shape 219a composed of a concave portion and a convex portion. This enlarges the bonding area between the second metal pattern 219 and the frit pattern 300, The adhesion between the second metal pattern 219 and the frit pattern 300 is further improved.

In addition, through the second metal pattern 219, the adhesive force is improved, and the reflectivity of the laser and the infrared ray (not shown) irradiated to the frit pattern 300 is further improved.

In this manner, by increasing the reflectance of the laser beam and the infrared ray (not shown) irradiated by the frit pattern 300, the frit pattern 300 is irradiated with a laser of high energy and an infrared ray (not shown).

Accordingly, a difference in intensity in which the laser and the infrared ray (not shown) are irradiated along the longitudinal direction of the conventional frit pattern 300 is generated, thereby alleviating the degree of firing by the region of the frit pattern 300.

As a result, the bonding strength of the OLED 100 is prevented from being lowered, thereby improving the process yield and improving the reliability of the OLED 100.

The first and second metal patterns 215 and 219 are formed to have a constant width in the non-display area NA where the frit pattern 300 is formed. The first and second metal patterns 215 and 219 (Not shown) in the non-display area NA or may have a cut-off part (not shown) at the corner of the first substrate 101. [

Hereinafter, the encapsulation process of the OLED 100 according to the embodiment of the present invention will be described.

4A to 4E are cross-sectional views illustrating steps of manufacturing encapsulation of an OLED according to an embodiment of the present invention.

4A, amorphous silicon is deposited on the pixel region P in the display region AA of the first substrate 101 to form an amorphous silicon layer (not shown), and a laser beam And the amorphous silicon layer is crystallized by a polysilicon layer (not shown).

Thereafter, a mask process is performed to pattern a polysilicon layer (not shown) to form a semiconductor layer 201 in a pure polysilicon state. A buffer layer (not shown) may be formed by depositing an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN x) on the entire surface of the insulating substrate 101 before forming an amorphous silicon layer (not shown) .

Next, silicon oxide (SiO ₂ ) is deposited on the semiconductor layer 201 of pure polysilicon to form a gate insulating film 203 on the entire surface of the first substrate 101.

 At this time, the gate insulating film 203 is also formed in the non-display area NA covering the edge of the display area AA.

Thereafter, a low resistance metal material such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), or copper alloy is deposited on the gate insulating film 203 of the pixel region P to form a first metal layer And the gate electrode 205 is formed corresponding to the central portion of the semiconductor layer 201 by performing a mask process.

At this time, the same material as the first metal layer (not shown) is also deposited on the gate insulating film 203 of the non-display area NA, and then the first metal pattern 215 is formed by performing the mask process.

Next, an impurity, that is, a trivalent element or a pentavalent element is doped on the entire surface of the substrate 101 by using the gate electrode 205 as a blocking mask, thereby forming impurities in a portion of the semiconductor layer 201 located outside the gate electrode 205 Doped source and drain regions 201b and 201c, and a portion corresponding to the doped gate electrode 205 forms an active region 201a of pure polysilicon.

Next, a first interlayer insulating film (207a) on the front by depositing an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiO ₂₎ in front of the semiconductor layer substrate 101, 201 is formed in the pixel regions (P) .

The first interlayer insulating film 207a in the pixel region P is subjected to a mask process to simultaneously or collectively pattern the first interlayer insulating film 207a and the lower gate insulating film 203 to form a source and a drain of the semiconductor layer 201. [ The first and second semiconductor layer contact holes 209a and 209b are formed to expose the drain regions 201b and 201c, respectively.

Thereafter, a metal material such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, chromium (Cr), and molybdenum (Mo) is formed on the first interlayer insulating film 207a in the pixel region A second metal layer (not shown) is formed by depositing one of the first and second semiconductor layer contact holes 209a and 209b on the first and second semiconductor layer contact holes 209a and 209b, Source and drain electrodes 211 and 213 are formed.

Here, the source and drain electrodes 211 and 213, which are spaced apart from the semiconductor layer 201, the gate insulating film 203, the gate electrode 205 and the first interlayer insulating film 207a, constitute a driving thin film transistor DTr.

At this time, the same material as the second metal layer (not shown) is also deposited on the first interlayer insulating film 207a of the non-display area NA, and then the second metal pattern 219 is formed by performing the mask process.

Next, an organic insulating material such as photo acryl or benzocyclobutene (BCB) is coated on the entire surface of the display area AA of the first substrate 101 on which the source and drain electrodes 211 and 213 are formed, The second interlayer insulating film 207b is formed.

At this time, the second interlayer insulating film 207b has a drain electrode contact hole 215 exposing the drain electrode 213.

Next, a first electrode 111 constituting an anode is formed as a component constituting the organic electroluminescent diode E on the second interlayer insulating film 207b.

Next, one of a photosensitive organic insulating material such as black resin, graphite powder, gravure ink, black spray, and black enamel is coated on the first electrode 111 and patterned to form a first electrode 111).

The banks 221 are formed in a matrix type of a lattice structure as a whole on the substrate 101 to distinguish between pixel regions.

Next, the organic light emitting layer 113 is formed by applying or vapor-depositing an organic light emitting material on the banks 221.

Although not shown in the drawing, the organic light emitting layer 113 may be formed of a single layer made of a light emitting material. In order to increase the light emitting efficiency, a hole injection layer, a hole transporting layer, layer, an electron transporting layer, and an electron injection layer.

Next, a second electrode 115, on which a transparent conductive material is deposited thickly, is formed on a semitransparent metal film on which a low-work function metal material is thinly deposited on the organic light emitting layer 113, thereby forming an organic light emitting diode (E) Is completed.

Next, as shown in FIG. 4B, the second metal pattern 219 formed in the non-display area NA is formed into the concavo-convex shape 219a.

The concave-convex shape 219a is formed by an etching process, and the concave-convex shape 219a is composed of a concave portion and a convex portion.

Thereby, the first substrate 101 of the OLED (100 in Fig. 2) is completed.

Next, as shown in FIG. 4C, an organic light emitting diode (OLED) formed on the first substrate (101 in FIG. 4B) in the process of bonding with the inner surface of the second substrate 102, (E in Fig. 4B), a frit paste containing an inorganic material as a main component is applied continuously in a wiring form using a dispensing apparatus to form the edge of the non-display area NA of the second substrate 102, A frit pattern 300 is formed.

At this time, it is preferable that the frit paste includes an organic material having a viscosity and a volatility characteristic in addition to the frit as a main component in order to enable dispensing through the dispensing device.

Next, as shown in FIG. 4D, the first substrate 101 on which the driving thin film transistor DTr and the organic light emitting diode E are formed and the second substrate 102 on which the frit pattern 300 is formed face each other The first substrate 101 and the second substrate 102 are formed so that the second metal pattern 219 formed on the first substrate 101 and the frit pattern 300 formed on the second substrate 102 are in contact with each other, 102).

At this time, the frit pattern 300 is brought into contact with the concave-convex shape 219a of the second metal pattern 219.

Next, as shown in FIG. 4E, the frit pattern 300 is instantaneously melted and coagulated by irradiating the laser beam LB using the laser device 400 corresponding to the frit pattern 300, The OLED 100 according to the embodiment of the present invention is completed by joining the first metal pattern 300 and the concave and convex shape 219a of the second metal pattern 219. [

In this case, since the intermolecular voids of the frit pattern 300 are much smaller than the water molecules, the frit pattern 300 made of such a material can completely prevent moisture from passing therethrough.

Therefore, the OLED 100 according to the present invention encapsulates and bonds the first and second substrates 101 and 102 through the frit pattern 300 made of an inorganic material, so that deterioration of the organic electroluminescent diode E can be prevented And the lifetime of the OLED 100 can be prolonged. Further, since the first and second substrates 101 and 102 are firmly attached to each other to reduce the defect rate generated after the covalent bonding, the overall cost and material cost loss can be reduced and the production yield can be improved.

 The OLED 100 according to the present invention can be manufactured by forming the metal patterns 215 and 219 on the first substrate 101 in contact with the frit pattern 300 so that the frit pattern 300 300 and the infrared rays (not shown) are reflected to prevent the display elements in the display area AA from adversely affecting the display elements.

Particularly, by forming the second metal pattern, which is in direct contact with the frit pattern, with the projections and depressions 330, adhesion strength between the second substrate 102 and the frit pattern 300 can be improved, And the reflectance of infrared rays (not shown).

By improving the reflectivity of the laser and the infrared ray (not shown) irradiated by the frit pattern 300, the laser and the infrared ray (not shown) of high energy are irradiated to the frit pattern 300, (Not shown) is irradiated to each region along the longitudinal direction of the frit pattern 300, thereby alleviating the degree of firing by the region of the frit pattern 300.

The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 schematically shows a cross section of a general active matrix OLED; FIG.

2 is a cross-sectional view schematically illustrating an OLED according to an embodiment of the present invention.

3 is an enlarged cross-sectional view of part of Fig.

FIGS. 4a to 4e are cross-sectional views illustrating steps of manufacturing an encapsulation of an OLED according to an embodiment of the present invention;

Claims (9)

A display device comprising: a first substrate on which a display region including a plurality of pixel regions and a non-display region surrounding the display region are defined; a second substrate facing the first substrate; A driving thin film transistor and an organic light emitting diode disposed in the pixel region of the first substrate; A concave-convex metal pattern disposed in the non-display area of the first substrate; And a frit pattern disposed along an edge of the second substrate and in contact with the metal pattern, Wherein the metal pattern has a wider width than the frit pattern. The method according to claim 1, Wherein the metal pattern is disposed in the non-display region along the frit pattern. The method according to claim 1, Wherein the metal pattern is disposed along the frit pattern and includes an open region at an edge portion of the non-display region. The method according to claim 1, Wherein the driving thin film transistor includes a semiconductor layer, a gate electrode, a source and a drain electrode, and the organic light emitting diode is in contact with the drain electrode. 5. The method of claim 4, Wherein the metal pattern is made of the same metal material as the source and drain electrodes. 6. The method of claim 5, And a metal layer made of the same metal material as the gate electrode is formed under the metal pattern with an interlayer insulating film interposed therebetween. The method according to claim 1, Wherein the frit pattern is made of an inorganic material. Forming a drive thin film transistor and an organic light emitting diode in the display region of the first substrate, the display region and the non-display region surrounding the display region, and forming a metal pattern in the non-display region; Forming the metal pattern in a concavo-convex shape; Forming a frit pattern having a width narrower than the metal pattern along an edge of a second substrate facing the first substrate; Facing the first substrate and the second substrate so that the frit pattern corresponds to the concavo-convex shape of the metal pattern; So that the frit pattern is bonded to the concavo-convex shape of the metal pattern by irradiating the laser beam corresponding to the frit pattern Wherein the organic electroluminescent device comprises a first electrode and a second electrode. 9. The method of claim 8, Wherein the concave-convex shape is formed by exposing the metal pattern to an etching liquid and etching the metal pattern.

Images