KR101625560B1 - Fabricating Method of organic luminescence emitting device - Google Patents

Abstract

The present invention relates to an organic electroluminescent device, and more particularly to encapsulation of an organic electroluminescent device.
A feature of the present invention is sealing the OLED to the first and second substrates through a solvent-removed metal seal pattern.
As a result, deterioration of the organic light emitting diode can be prevented and the lifetime of the OLED can be extended. Also, since the first and second substrates are firmly adhered to each other to reduce the defect rate generated after the adhesion, .

Description

TECHNICAL FIELD [0001] The present invention relates to a fabrication method of an organic electroluminescent device,

The present invention relates to an organic electroluminescent device, and more particularly to encapsulation of an organic electroluminescent device.

Until recently, CRT (cathode ray tube) was mainly used as a display device. However, in recent years, flat panel displays such as a plasma display panel (PDP), a liquid crystal display device (LCD), and an organic luminescence emitting device (OLED) Devices have been widely studied and used.

Of the above flat panel display devices, an organic electroluminescent element (hereinafter referred to as OLED) is a self-luminous element and can be lightweight and thin because it does not require a backlight used in a liquid crystal display device which is a non-light emitting element.

In addition, it has a better viewing angle and contrast ratio than liquid crystal display devices, is advantageous in terms of power consumption, can be driven by DC low voltage, has a fast response speed, is resistant to external impacts due to its solid internal components, It has advantages.

Particularly, since the manufacturing process is simple, it is advantageous in that the production cost can be saved more than the conventional liquid crystal display device.

OLEDs having such characteristics are largely divided into a passive matrix type and an active matrix type. In a passive matrix type, a device is formed in a matrix form while crossing signal lines, whereas an active matrix type is a pixel A thin film transistor which is a switching element for on / off switching on / off is arranged for each pixel.

Passive matrix type has many limitations such as resolution, power consumption, lifetime, etc. Recently, active matrix type OLED capable of realizing high resolution and large screen has been actively studied.

1 is a cross-sectional view schematically showing a cross section of a general active matrix OLED.

As shown, the OLED 10 comprises a first substrate 1 and a second substrate 2 facing the first substrate 1, and the first and second substrates 1, So that the edges thereof are sealed through a seal pattern (20).

In more detail, a driving thin film transistor DTr is formed for each pixel region on the first substrate 1, a first electrode 11 connected to each driving thin film transistor DTr, An organic light emitting layer 13 that emits light of a specific color is formed on the upper portion of the organic light emitting layer 11 and a second electrode 15 is formed on the organic light emitting layer 13.

The organic luminescent layer 13 displays red, green, and blue colors. As a general method, a separate organic material emitting red, green, and blue light is patterned for each pixel.

The first and second electrodes 11 and 15 and the organic light emitting layer 13 formed therebetween form an organic light emitting diode E. At this time, the OLED 10 having such a structure constitutes the first electrode 11 as the anode and the second electrode 15 as the cathode.

On the other hand, the seal pattern 20 of the OLED 10 is usually made of a sealant made of an organic or polymeric material. Such a sealant has a structure in which a gap between a molecule and a molecule is sufficiently large The size is becoming.

Therefore, as time passes, a pollution source such as moisture or gas permeates the seal pattern 20 and penetrates into the OLED 10, and the polluted sources penetrating the seal pattern 20 are present inside the sealed OLED 10 The characteristics of the organic electroluminescent diode (E), which is very sensitive to moisture and oxygen, are deformed.

That is, the contaminants infiltrated from the outside penetrate into the organic light emitting layer 5 of the organic electroluminescent diode E, so that the organic light emitting layer 5 may be deteriorated in the light emitting property of the organic light emitting layer 5 due to a contaminant source The lifetime of the organic light emitting layer 5 is shortened. In addition, black spots occur due to contamination of some areas.

Accordingly, recent studies on the encapsulation of the OLED 10 for protecting the organic light emitting diode E from moisture and oxygen in the air have been actively conducted.

SUMMARY OF THE INVENTION It is a first object of the present invention to provide an organic electroluminescent device in which a contamination source can not penetrate into the inside.

The second object is to improve the luminance and image characteristics.

In order to achieve the above-mentioned object, the present invention forms a driving thin film transistor and an organic light emitting diode in the display area of a first substrate defined by a display area and a non-display area surrounding the display area, Forming a first metal pattern on a display area; Forming a second metal pattern on an edge of a second substrate facing the first substrate and corresponding to the non-display region; Applying a metal seal pattern on top of a selected one of the first and second metal patterns; Removing the solvent contained in the metal seal pattern; Facing the first substrate and the second substrate such that the metal seal pattern corresponds to the first and second first metal patterns; And bonding the first and second substrates so that the metal seal pattern is adhered to the first metal pattern.

At this time, the step of removing the solvent may include: positioning the second substrate having the metal seal pattern formed therein into the chamber; And placing the chamber in a vacuum state. In the step of attaching the first substrate and the second substrate to each other, heat is applied to the metal seal pattern.

The metal seal pattern is applied by a dispensing method or a screen printing method, and the metal seal pattern is formed by mixing a viscous solvent and metal particles.

At this time, the viscous solvent is composed of a combination of one selected from epoxy resin, phenol resin, acryl resin, heat and photocurable resin, and organic binder, The metal particles may be selected from the group consisting of indium (In), tin (Sn), zinc (Zn), lead (Pb), silver (Ag), gold (Au), aluminum (Al), aluminum alloy (Mo), a Mo alloy, tungsten (W), tungsten, titanium (Ti), or a carbon nano tube.

The first metal pattern may be formed of a conductive material used for forming the driving thin film transistor, or may be formed as a single layer or multiple layers of a separate metallic material. The second metallic pattern may be a conductive material Or may be formed of a conductive material used for forming the organic electroluminescent diode, or may be formed as a single layer or a multilayer of a separate metallic material.

As described above, the OLED of the present invention has the effect of preventing the deterioration of the organic light emitting diode and extending the lifetime of the OLED by sealing the first and second substrates through the solvent-removed metal seal pattern .

Further, since the first and second substrates are firmly attached to each other to reduce the defect rate generated after the covalent bonding, it is possible to reduce the overall cost and material cost loss and improve the production yield.

1 is a cross-sectional view schematically showing a cross section of a general active matrix OLED;
2 is a cross-sectional view schematically illustrating an OLED according to an embodiment of the present invention.
3 is an enlarged cross-sectional view of part of Fig.
FIG. 4 is a flowchart illustrating a process of forming a metal seal pattern according to an embodiment of the present invention, according to a process flow. FIG.
FIGS. 5A to 5B and FIGS. 6A to 6B are photographs of the first and second substrates bonded together through the metal seal pattern and then taken apart. FIG.
7A to 7F are cross-sectional views illustrating steps of manufacturing an OLED according to an embodiment of the present invention.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.

FIG. 2 is a cross-sectional view schematically showing an OLED according to an embodiment of the present invention, and FIG. 3 is an enlarged cross-sectional view of a portion of FIG.

Meanwhile, the OLED 100 is divided into a top emission type and a bottom emission type according to a transmission direction of emitted light. Hereinafter, an upper emission type will be described as an example of the present invention.

As shown, the OLED 100 according to the embodiment of the present invention includes a first substrate 101 on which a driving thin film transistor DTr and an organic light emitting diode E are formed, a second substrate 101 for encapsulation The first and second substrates 101 and 102 are spaced apart from each other. The edges of the first and second substrates 101 and 102 are sealed and attached together through a metal seal pattern 200.

A semiconductor layer 201 is formed on the first substrate 101. The semiconductor layer 201 is made of silicon and has a central portion serving as an active region 201a forming a channel. And source and drain regions 201b and 201c doped with a high concentration of impurities.

A gate insulating layer 203 is formed on the semiconductor layer 201.

The gate electrode 205 corresponding to the active region 201a is formed on the gate insulating film 203 and a gate wiring extending in one direction although not shown in the figure is formed.

A first interlayer insulating film 207a is formed on the entire upper surface of the gate electrode 205 and the gate wiring (not shown). At this time, the first interlayer insulating film 207a and the gate insulating film 203, And first and second semiconductor layer contact holes 209a and 209b that respectively expose the source and drain regions 201b and 201c located on both sides of the semiconductor layer 201a.

Next, upper portions of the first interlayer insulating film 207a including the first and second semiconductor layer contact holes 209a and 209b are separated from each other by the source and the drain, which are exposed through the first and second semiconductor layer contact holes 209a and 209b, And source and drain electrodes 211 and 213 which are in contact with the drain regions 201b and 201c, respectively.

A second interlayer insulating film 207b is formed on the first interlayer insulating film 207a exposed between the source and drain electrodes 211 and 213 and the two electrodes 211 and 213. The second interlayer insulating film 207b And a drain contact hole 215 exposing the drain electrode 213.

At this time, the semiconductor layer 201 including the source and drain electrodes 211 and 213 and the source and drain regions 201b and 201c in contact with the electrodes 211 and 213 and the active region 201a and the semiconductor layer 201 The gate insulating film 203 and the gate electrode 205 formed on the gate insulating film 203 constitute the driving thin film transistor DTr.

On the other hand, although not shown in the figure, data lines (not shown) are formed which intersect the gate wiring (not shown) to define the pixel region. The switching thin film transistor (not shown) has the same structure as the driving thin film transistor DTr and is connected to the driving thin film transistor DTr.

In the drawing, the switching thin film transistor (not shown) and the driving thin film transistor DTr are shown as a top gate type in which the semiconductor layer 201 is formed of a polysilicon semiconductor layer. As a variation thereof, It may be formed as a bottom gate type of impurity amorphous silicon.

The first electrode 111, the organic light emitting layer 113 and the second electrode 115 constituting the organic electroluminescent diode E are sequentially formed on the second interlayer insulating film 207b, Respectively.

The first electrode 111 is connected to the drain electrode 213 of the driving thin film transistor DTr and the first electrode 111 is formed for each pixel region P. The first electrode 111 is formed for each pixel region P, A bank (bank) 221 is located in the non-pixel region between the electrodes 111.

That is, the banks 221 are formed in a matrix type of a lattice structure as a whole over the substrate 101, so that the banks 221 are formed at boundaries with respect to the respective pixel regions P so that the first electrodes 111 are formed in the pixel regions P ) Are formed separately from each other.

In this case, the first electrode 111 is formed of indium-tin-oxide (ITO), which is a relatively high work function value, to serve as an anode electrode, and the second electrode 115 is formed of a cathode cathode is made of a metal material having a relatively low work function value.

The light emitted from the organic light emitting layer 113 is driven by the upper light emitting method that is emitted toward the second electrode 115.

Here, the organic light emitting layer 113 may be a single layer made of a light emitting material. In order to increase the light emitting efficiency, a hole injection layer, a hole transporting layer, an electron transporting layer ) And an electron injection layer.

When a predetermined voltage is applied to the first electrode 111 and the second electrode 115 in accordance with a selected color signal, the OLED 100 emits a positive voltage, which is injected from the first electrode 111, The provided electrons are transported to the organic light emitting layer 113 to form an exciton. When the excitons transit from the excited state to the ground state, light is emitted and emitted in the form of visible light.

At this time, the emitted light passes through the transparent second electrode 115 and exits to the outside, so that the OLED 100 realizes an arbitrary image.

Particularly, the OLED 100 according to the embodiment of the present invention is formed by bonding the seal pattern 200 formed on the edges of the first and second substrates 101 and 102 to the metal A metal sealant (hereinafter referred to as a metal seal pattern) containing a material is used.

The first and second metal patterns 210a and 210b are formed on the first and second substrates 101 and 102 corresponding to the metal seal pattern 200. The metal seal pattern 200 has a width The first metal pattern 210a and the second metal pattern 210b are narrower than the first metal patterns 210a and 210b.

The first and second metal patterns 210a and 210b are for improving the interface characteristics of the metal seal pattern 200 and improve adhesion between the metal seal pattern 200 and the first and second substrates 101 and 102 .

At this time, the first and second metal patterns 210a and 210b may be formed of a material used for forming a switching and driving thin film transistor (not shown), or may be formed of a separate metal material as a single layer or multiple layers.

As described above, according to the present invention, the seal pattern is formed by using the metal seal pattern 200 in which the viscous solvent and the metal particles are mixed, and the first and second metal patterns 200 and 300 are formed between the metal seal pattern 200 and the substrates 101 and 102, It is possible to prevent contamination sources such as moisture and gas from penetrating into the spaces between the first and second substrates 101 and 102 by forming the first and second substrates 210 and 210b.

Table (1) below is a table comparing the moisture permeability of the sealant actually used for the OLED 100. [

Sealant material Water permeability (g / m2)
at 60 < 0 > C, 90%, 100 mm Organic film or polymer material > 10 Metal series > 10E-4

As shown in Table 1, it can be seen that the sealant of the organic film or the polymer material conventionally used as a seal material has a moisture permeability higher than that of a metal material.

Therefore, the present invention can suppress moisture permeability by using a metal series material having a significantly lower moisture permeability than an organic film or a polymer material, and has a higher strength than a conventional seal pattern (20 in FIG. 1) (101, 102).

Accordingly, it is possible to prevent the contaminants from penetrating into the space between the first and second substrates 101 and 102 from the outside.

Therefore, deterioration of the organic electroluminescent diode (E) can be prevented and the lifetime of the OLED (100) can be extended. Also, by firmly attaching the first and second substrates 101 and 102 to each other, it is possible to reduce the defect rate generated after the cementation, thereby reducing the overall cost and the material cost loss and improving the production yield.

Meanwhile, the metal seal pattern 200 of the present invention is formed by mixing a viscous solvent and metal particles, wherein the viscous solvent includes an epoxy resin, a phenol resin, an acryl resin Resin, heat, and a combination of a photocurable resin and an organic binder.

The metal particles may be selected from metals having a low melting point (indium (In), tin (Sn), zinc (Zn), lead (Pb), or silver (Ag) Al alloy, Al alloy, Cu, Mo, Mo alloy, tungsten, tungsten, titanium, or carbon nano tube, Or all metals having a melting point of 400 DEG C or less can be used.

In addition, the metal seal pattern 200 includes a solvent, an activator, and the like.

The metal seal pattern 200 is completed by removing volatile components such as a solvent through a dry process.

4 is a flowchart illustrating a process of forming a metal seal pattern according to an embodiment of the present invention in accordance with a process flow.

First, a metal seal pattern (200 in Fig. 3) is applied on a substrate (eh3 of 102) on which a metal pattern (201b in Fig. 3) is formed in the first step (st1).

The metal seal pattern (200 in Fig. 3) is formed by applying by dispensing or screen printing.

Next, the second step st2 proceeds to a dry process for removing volatile components such as a solvent contained in the metal seal pattern (200 in Fig. 3).

The drying process is carried out in a chamber (not shown) defining a closed reaction zone. After the substrate (102 of FIG. 3) on which the metal seal pattern (200 of FIG. 3) is formed is placed inside a chamber (not shown) The solvent contained in the metal seal pattern (200 in FIG. 3) of the substrate (102 in FIG. 3) is rapidly evaporated and removed by making the interior of the substrate (not shown) in a vacuum state.

Removal of the solvent is intended to prevent the solvent contained in the metal seal pattern 200 (Fig. 3) from penetrating into the OLED (100 in Fig. 3) and also to make the thickness of the metal seal pattern (200 in Fig. 3) .

And to shorten the time required for the process of hardening the metal seal pattern (200 in FIG. 3).

Next, the third step (st3) is a step of curing the metal seal pattern (200 in Fig. 3). The metal seal pattern (200 in Fig. 3) ).

Therefore, the metal seal pattern (200 in Fig. 3) having a moisture permeability rate significantly lower than that of the conventional seal pattern (20 in Fig. 1) is completed.

On the other hand, it is preferable to remove only the solvent contained in the metal seal pattern (200 in FIG. 3). That is, it is not desirable to remove an activator contained in the metal seal pattern (200 in FIG. 3).

In more detail, the solvent and activator can be removed at one time by dipping the metal seal pattern (200 in FIG. 3) into a particular solution.

However, when the activator contained in the metal seal pattern 200 (FIG. 3) is removed, it is formed on the metal seal pattern 200 (FIG. 3) and the first and second substrates 101 and 102 The adhesion characteristic between the first and second metal patterns (210a and 210b in FIG. 3) is lowered, and an inter-metallic compound (IMC) is grown at the interface.

When the IMC is formed, the mechanical characteristics between the metal seal pattern (200 in FIG. 3) and the first and second metal patterns (210a and 210b in eh 3) are weakened.

FIGS. 5A to 5B and FIGS. 6A to 6B are photographs showing the adhesion characteristics between the metal seal pattern and the metal pattern, which is a photograph taken after the first and second substrates are bonded together through the metal seal pattern. FIG.

FIGS. 5A and 5B are photographs taken after removing the solvent and the activator from the metal seal pattern, FIG. 5A is a photograph showing the adhesion characteristics between the first metal pattern and the metal seal pattern on the first substrate, FIG. 2 is a photograph showing adhesion characteristics between a metal pattern and a metal seal pattern.

6A and 6B are photographs showing adhesion characteristics between the first metal pattern and the metal seal pattern on the first substrate. FIG. 6B is a photograph showing adhesion characteristics between the first metal pattern and the metal seal pattern on the first substrate. FIG. 2 is a photograph showing adhesion characteristics between a metal pattern and a metal seal pattern.

5A to 5B, the metal seal pattern (200 in FIG. 3) from which the solvent and the activator are removed has an intermetallic compound grown between the metal seal pattern (200 in FIG. 3) and the metal pattern (210a and 210b in FIG. 3) , It can be confirmed that a large amount of intermetallic compound residues are present on the metal pattern (210a, 210b in FIG. 3).

In addition, the metal seal pattern (200 in FIG. 3) can not be formed broadly on the metal pattern (210a, 210b in FIG. 3). It can be understood that the adhesion characteristics between the metal seal pattern (200 in Fig. 3) and the metal pattern (210a, 210b in Fig. 3) is poor.

On the other hand, the metal seal pattern 200 of FIG. 3 of the present invention can be formed by removing only the solvent, so that there is almost no residual intermetallic compound on the metal patterns 210a and 210b of FIGS. 6a to 6b .

As a result, it can be confirmed that the intermetallic compound did not grow between the metal seal pattern (200 in FIG. 3) and the metal pattern (210a and 210b in FIG. 3).

3) is formed on the metal pattern (210a, 210b in Fig. 3). This is because the metal seal pattern (200 in Fig. 3) and the metal pattern 3 210a, 210b) is good.

The process of removing the solvent and the activator by dipping the metal seal pattern (200 in FIG. 3) into a specific solution is performed by applying a metal seal pattern (200 in FIG. 3) on the substrate After the curing process, the solvent and the activator are removed.

After the solvent and the activator are removed, the metal seal pattern (200 in FIG. 3) is again subjected to a secondary curing process.

3) than the process of removing only the solvent contained in the metal seal pattern 200 of the present invention. Therefore, the metal seal pattern 200 of FIG. 3 according to the embodiment of the present invention, The efficiency of the process is lower than that of the process of forming.

As described above, the OLED (100 in FIG. 3) of the present invention can be manufactured by sealing the first and second substrates (101 and 102 in FIG. 3) through the solvent-removed metal seal pattern (20 in Fig. 1) made of an organic film or a polymeric material of the above-mentioned organic film or polymeric material, so that it is possible to prevent the contaminants from penetrating from the outside.

In this way, deterioration of the organic electroluminescent diode (E in FIG. 3) can be prevented and the lifetime of the OLED (100 in FIG. 3) can be extended. Also, since the first and second substrates (101 and 102 in FIG. 3) are firmly attached to each other to reduce the defect rate generated after the covalent bonding, the overall cost and material cost loss are reduced and the production yield is improved.

7A to 7F are cross-sectional views illustrating the steps of fabricating an OLED according to an exemplary embodiment of the present invention.

7A, the display region AA is formed of a plurality of pixel regions P, and switching thin film transistors (not shown), driving thin film transistors DTr and organic A first substrate 101 having an electroluminescent diode E is prepared.

Here, the switching TFTs (not shown), the driving TFT DTr, and the organic light emitting diode E formed in each pixel region P will be described in more detail. Each pixel region P To form an amorphous silicon layer (not shown), and the amorphous silicon layer is crystallized into a polysilicon layer (not shown) by irradiating the amorphous silicon layer with a laser beam or by heat treatment.

Thereafter, a mask process is performed to pattern a polysilicon layer (not shown) to form a pure polysilicon semiconductor layer 201 (FIG. 3). A buffer layer (not shown) may be formed by depositing an inorganic insulating material such as silicon oxide (SiO2) or silicon nitride (SiNx) on the entire surface of the insulating substrate 101 before forming the amorphous silicon layer (not shown).

Next, silicon oxide (SiO2) is deposited on the semiconductor layer (201 in Fig. 3) of pure polysilicon to form a gate insulating film (203 in Fig. 3).

Thereafter, a first metal layer (not shown) is formed by depositing a low resistance metal material such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), or copper alloy on the gate insulating film Then, a mask process is performed to form a gate electrode (205 in FIG. 3) and a gate wiring (not shown) corresponding to the central portion of the semiconductor layer 201 (FIG. 3).

3) of the semiconductor layer 201 (FIG. 3) by doping an impurity, that is, a trivalent element or a pentavalent element, on the entire surface of the first substrate 101 by using the gate electrode 205 3), and a portion corresponding to the gate electrode (205 in FIG. 3) which is prevented from being doped is made of pure polysilicon Thereby forming an active region (201a in Fig. 2B).

Next, an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiO2) is deposited on the entire surface of the first substrate 101 on which the semiconductor layer 201 of FIG. 3 is formed to form a first interlayer insulating film 207a 3) is formed by simultaneously or collectively patterning the first interlayer insulating film (207a in FIG. 3) and the lower gate insulating film (203 in FIG. 3) (209a, 209b in Fig. 3) are formed to expose first and second semiconductor layer contact holes (201b, 201c in Fig. 3), respectively.

Thereafter, a metal material such as aluminum (Al), an aluminum alloy (AlNd), copper (Cu), a copper alloy, chromium (Cr), and molybdenum (Mo) is deposited on the first interlayer insulating film 3) and the source and drain regions (201b and 201c in FIG. 3) are formed through the first and second semiconductor layer contact holes (209a and 209b in FIG. 3) by forming a second metal layer (not shown) Source and drain electrodes (211 and 213 in FIG. 3) and data lines (not shown) are formed.

At this time, source and drain electrodes (see FIG. 3), which are spaced apart from the semiconductor layer (201 in FIG. 3), the gate insulating film (203 in FIG. 3), the gate electrode (205 in FIG. 3), and the first interlayer insulating film 211, and 213 constitute a driving thin film transistor DTr.

Next, an organic insulating material such as photo acryl or benzocyclobutene (BCB) is applied on the first substrate 101 on which the source and drain electrodes (211 and 213 in FIG. 3) are formed and patterned Thereby forming a second interlayer insulating film (207b in Fig. 3).

At this time, the second interlayer insulating film (207b in FIG. 3) has a drain electrode contact hole (215 in FIG. 3) exposing the drain electrode (213 in FIG. 3).

3) via the drain contact hole (215 in FIG. 3) to the upper portion of the second interlayer insulating film (207b in FIG. 3) and to constitute the organic electroluminescent diode (E) Thereby forming a first electrode 111 constituting an anode as an element.

Next, one of a photosensitive organic insulating material such as a black resin, a graphite powder, a gravure ink, a black spray, and a black enamel is coated on the first electrode 111 and patterned to form a first electrode 111 (221 in Fig. 3).

The banks (221 in FIG. 3) are formed as a matrix type of a lattice structure as a whole on the first substrate 101, so that the pixel regions P are distinguished.

Next, the organic light emitting layer 113 is formed by applying or vapor-depositing an organic light emitting material on the bank (221 in FIG. 3).

Next, a second electrode 115, on which a transparent conductive material is deposited thickly, is formed on a semitransparent metal film on which a low-work function metal material is thinly deposited on the organic light emitting layer 113, thereby forming an organic light emitting diode (E) Is completed.

Thereby, the first substrate 101 of the OLED (100 in Fig. 3) is completed.

At this time, although only three pixel regions P are shown in the drawing, only three pixel regions P are shown for convenience, and actually, several hundreds to thousands of pixel regions are provided.

A first metal pattern 210a is formed along the non-display area NA of the edge of the display area AA of the first substrate 101. The first metal pattern 210a is formed of aluminum (Al), aluminum (AlNd), copper (Cu), or a copper alloy is deposited and is formed by a mask process.

At this time, the first metal pattern 210a may be formed simultaneously with the gate electrode 205 (FIG. 3) or may be formed simultaneously with the source and drain electrodes (211 and 213 of FIG. 3).

At the same time, as shown in FIG. 7B, a second metal pattern 210b is formed along the edge of the non-display area NA of the second substrate 102 for encapsulation of the OLED (100 in FIG. 3) .

The second metal pattern 210b may be formed by depositing one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), and copper alloy as the first metal pattern 210a .

Next, as shown in FIG. 7C, a metal seal pattern 200 is formed on the second metal pattern 210a along the non-display area NA.

The metal seal pattern 200 is formed by applying along the edge of the non-display area NA of the second substrate 101 through a dispensing or screen printing method.

Next, as shown in FIG. 7D, the solvent of the metal seal pattern 200 formed on the second substrate 102 is removed.

The solvent is conducted in a chamber (not shown) defining a closed reaction zone. After the second substrate 102 on which the metal seal pattern 200 is formed is placed inside a chamber (not shown), a solvent The solvent contained in the metal seal pattern 200 of the substrate 102 is rapidly evaporated and removed.

Next, as shown in FIG. 7E, after the second substrate 102 is positioned to face the first substrate 101 and the alignment is performed, the second substrate 102 and the first substrate 101 are aligned, Respectively.

At this time, the metal seal pattern 200 formed on the second substrate 101 is bonded to the first metal pattern 210a formed along the edge of the non-display area NA of the first substrate 102.

Next, as shown in FIG. 7F, the first substrate 101 and the second substrate 102 are attached to each other. At this time, heat is applied to the metal seal pattern 200 to cure the metal seal pattern to complete the OLED 100 .

Therefore, the organic light emitting diode E according to the embodiment of the present invention can prevent the contaminants from penetrating from the outside by the metal seal pattern 200.

Thus, deterioration of the organic electroluminescent diode (E) can be prevented and the lifetime of the OLED (100) can be prolonged. Also, since the first and second substrates 101 and 102 are firmly attached to each other to reduce the defect rate generated after the cementation, the overall cost and material cost loss are reduced and the production yield is improved.

The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the present invention.

102: second substrate
210b: second metal pattern
200: Metal seal pattern

Claims (9)

Forming a driving thin film transistor and an organic light emitting diode in the display region of the first substrate defined by the display region and the non-display region surrounding the display region, and forming a first metal pattern in the non-display region;
Forming a second metal pattern on an edge of a second substrate facing the first substrate and corresponding to the non-display region;
Applying a metal seal pattern on top of a selected one of the first and second metal patterns;
Removing the solvent contained in the metal seal pattern;
Facing the first substrate and the second substrate such that the metal seal pattern corresponds to the first and second first metal patterns;
Attaching the first and second substrates so that the metal seal pattern is adhered to the first metal pattern
Wherein the organic electroluminescent device comprises a first electrode and a second electrode.
The method according to claim 1,
The step of removing the solvent comprises:
Positioning the second substrate having the metal seal pattern formed therein into the chamber; A step of bringing the inside of the chamber into a vacuum state
Gt; < / RTI >
The method according to claim 1,
And applying heat to the metal seal pattern in the step of bonding the first substrate and the second substrate together.
The method according to claim 1,
Wherein the metal seal pattern is applied by a dispensing method or a screen printing method.
The method according to claim 1,
Wherein the metal seal pattern is formed by mixing a viscous solvent and metal particles.
6. The method of claim 5,
The viscous solvent may be an organic electroluminescent device comprising a combination of one selected from epoxy resin, phenol resin, acryl resin, heat and photocurable resin, and organic binder Gt;
6. The method of claim 5,
The metal particles may be selected from the group consisting of indium (In), tin (Sn), zinc (Zn), lead (Pb), silver (Ag), gold (Au), aluminum (Al), aluminum alloy, (Mo), a Mo alloy, tungsten (W), tungsten, titanium (Ti), or a carbon nano tube.
The method according to claim 1,
Wherein the first metal pattern is formed of a conductive material used for forming the driving thin film transistor, or is formed as a single layer or multiple layers of a separate metal material.
The method according to claim 1,
The second metal pattern may be formed of a conductive material used for forming the driving thin film transistor, a conductive material used for forming the organic electroluminescent diode, or an organic electroluminescent element ≪ / RTI >

Images