KR20110043529A - 다이아몬드 물질 - Google Patents
다이아몬드 물질 Download PDFInfo
- Publication number
- KR20110043529A KR20110043529A KR1020107027391A KR20107027391A KR20110043529A KR 20110043529 A KR20110043529 A KR 20110043529A KR 1020107027391 A KR1020107027391 A KR 1020107027391A KR 20107027391 A KR20107027391 A KR 20107027391A KR 20110043529 A KR20110043529 A KR 20110043529A
- Authority
- KR
- South Korea
- Prior art keywords
- diamond
- less
- concentration
- layer
- ppb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 381
- 229910003460 diamond Inorganic materials 0.000 title claims description 374
- 239000000463 material Substances 0.000 title claims description 231
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 202
- 238000000034 method Methods 0.000 claims abstract description 202
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 104
- 239000013078 crystal Substances 0.000 claims abstract description 77
- 239000007787 solid Substances 0.000 claims abstract description 74
- 239000000126 substance Substances 0.000 claims abstract description 40
- 230000007547 defect Effects 0.000 claims description 214
- 239000007789 gas Substances 0.000 claims description 139
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 109
- 229910052799 carbon Inorganic materials 0.000 claims description 107
- 239000000758 substrate Substances 0.000 claims description 102
- 238000005530 etching Methods 0.000 claims description 64
- 239000012535 impurity Substances 0.000 claims description 41
- 239000000203 mixture Substances 0.000 claims description 34
- 229910052739 hydrogen Inorganic materials 0.000 claims description 33
- 239000001257 hydrogen Substances 0.000 claims description 32
- 230000005291 magnetic effect Effects 0.000 claims description 32
- 229910052760 oxygen Inorganic materials 0.000 claims description 30
- 239000001301 oxygen Substances 0.000 claims description 29
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 20
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- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 2
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- 229910052754 neon Inorganic materials 0.000 description 3
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
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- 241000243321 Cnidaria Species 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 229910008329 Si-V Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006768 Si—V Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
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- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- 210000002268 wool Anatomy 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Electromagnetism (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0813491.8A GB0813491D0 (en) | 2008-07-23 | 2008-07-23 | Diamond Material |
| GB0813491.8 | 2008-07-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110043529A true KR20110043529A (ko) | 2011-04-27 |
Family
ID=39737531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020107027391A Withdrawn KR20110043529A (ko) | 2008-07-23 | 2009-07-22 | 다이아몬드 물질 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9317811B2 (https=) |
| EP (1) | EP2300643A1 (https=) |
| JP (1) | JP5536056B2 (https=) |
| KR (1) | KR20110043529A (https=) |
| CN (1) | CN102076891B (https=) |
| AU (1) | AU2009275284A1 (https=) |
| CA (1) | CA2725084A1 (https=) |
| GB (1) | GB0813491D0 (https=) |
| WO (1) | WO2010010352A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170104479A (ko) * | 2015-01-14 | 2017-09-15 | 아이아이에이 테크놀러지스 피티이. 엘티디. | 전자장치 등급의 단결정 다이아몬드 및 그 제조 방법 |
Families Citing this family (113)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1990313A1 (en) | 2007-05-10 | 2008-11-12 | INSERM (Institut National de la Santé et de la Recherche Médicale) | Method to produce light-emitting nano-particles of diamond |
| US9255009B2 (en) | 2009-06-26 | 2016-02-09 | Element Six Technologies Limited | Diamond material |
| JP5891564B2 (ja) | 2009-06-26 | 2016-03-23 | エレメント シックス リミテッド | ファンシーな淡い青色又はファンシーな淡い青色／緑色の単結晶ｃｖｄダイヤモンドの製造方法及び得られた製品 |
| AU2011220332B2 (en) * | 2010-02-24 | 2013-06-27 | Macquarie University | Mid to far infrared diamond Raman laser systems and methods |
| GB201013112D0 (en) | 2010-08-04 | 2010-09-22 | Element Six Ltd | A diamond optical element |
| GB201015260D0 (en) | 2010-09-14 | 2010-10-27 | Element Six Ltd | A microfluidic cell and a spin resonance device for use therewith |
| GB201107552D0 (en) | 2011-05-06 | 2011-06-22 | Element Six Ltd | Diamond sensors, detectors, and quantum devices |
| GB201107730D0 (en) | 2011-05-10 | 2011-06-22 | Element Six Ltd | Diamond sensors, detectors and quantum devices |
| GB201108644D0 (en) * | 2011-05-24 | 2011-07-06 | Element Six Ltd | Diamond sensors, detectors, and quantum devices |
| US9157859B2 (en) | 2011-06-13 | 2015-10-13 | President And Fellows Of Harvard College | Efficient fluorescence detection in solid state spin systems |
| US9658301B2 (en) * | 2011-06-13 | 2017-05-23 | President And Fellows Of Harvard College | Absorbtion-based detection of spin impurities in solid-state spin systems |
| EP2752506B1 (en) * | 2011-09-02 | 2017-04-05 | Sumitomo Electric Industries, Ltd. | Single crystal diamond and method for producing same |
| JP5880200B2 (ja) * | 2012-03-27 | 2016-03-08 | 住友電気工業株式会社 | 単結晶ダイヤモンドおよびその製造方法 |
| GB2495632B (en) | 2011-10-14 | 2016-08-03 | Element Six Ltd | Quantum processing device |
| FR2982405B1 (fr) * | 2011-11-04 | 2013-11-08 | Thales Sa | Support de stockage de donnees et procede de lecture de ce support |
| GB201121642D0 (en) | 2011-12-16 | 2012-01-25 | Element Six Ltd | Single crtstal cvd synthetic diamond material |
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| CN102076891B (zh) | 2016-01-06 |
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| AU2009275284A1 (en) | 2010-01-28 |
| EP2300643A1 (en) | 2011-03-30 |
| US9317811B2 (en) | 2016-04-19 |
| JP2011529018A (ja) | 2011-12-01 |
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